CN112953403A - Millimeter wave power amplifier based on CMOS (complementary Metal oxide semiconductor) process and power control method - Google Patents
Millimeter wave power amplifier based on CMOS (complementary Metal oxide semiconductor) process and power control method Download PDFInfo
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- CN112953403A CN112953403A CN202110218903.7A CN202110218903A CN112953403A CN 112953403 A CN112953403 A CN 112953403A CN 202110218903 A CN202110218903 A CN 202110218903A CN 112953403 A CN112953403 A CN 112953403A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses a millimeter wave power amplifier based on a CMOS (complementary metal oxide semiconductor) process and a power control method, belonging to the technical field of radio frequency integrated circuits. The output power is adjusted by controlling the work or the non-work of a specific MOS tube of the single-stage amplification unit, specifically, for a certain MOS tube, only the work state and the non-work state are realized, and the multi-gear adjustment is realized by increasing the number of a plurality of on-off controllable transistors; when the highest output power is in a gear, all the working transistors of the power amplifier work, the working current is the largest, the output power is reduced, the number of the working transistors of the power amplifier is reduced, and the power consumption is reduced; compared with a power control mode based on an attenuator, the power consumption is lower and the efficiency is higher when the power control mode works at low output power.
Description
Technical Field
The invention relates to the technical field of radio frequency integrated circuits, in particular to a millimeter wave power amplifier based on a CMOS (complementary metal oxide semiconductor) process and a power control method.
Background
Millimeter waves are electromagnetic waves with the wavelength of 1-10mm, and compared with a microwave frequency band with tight spectrum resources, millimeter waves have larger bandwidth, which means larger data rate or higher precision for system application. Therefore, the millimeter wave technology has wide application prospect in the fields of communication, radar, remote sensing and the like.
The power amplifier is an indispensable circuit in a millimeter wave transmitter, the early millimeter wave power amplifier is realized by using a III-V semiconductor process, the radio frequency performance of a CMOS process device is remarkably improved along with the development of a CMOS process, and the millimeter wave power amplifier based on the CMOS process is feasible. Because of the advantages of low cost and high integration of CMOS processes, more and more millimeter wave transceiver systems are implemented based on CMOS processes.
Due to systems such as radar and wireless communication, the output power requirements of the power amplifier are different in different application scenarios. The single chip meets the application requirements of different scenes, and the realization of multi-mode application is the current development trend, which requires that the transmission power of the power amplifier can be flexibly configured according to the specific requirements.
Conventional power amplifier power control mainly includes the following two categories:
the first type is to realize power control by adjusting an analog bias voltage, that is, to change a gain by adjusting an equivalent transconductance of a changing circuit, so as to realize power control of an amplifier, and the method mainly has the following problems:
1) in the case of a transistor operating in a saturation region, the analog bias voltage is adjusted, and the voltage adjustable range is limited, so that the change range of the gain is limited, and particularly, when the bias voltage is increased to a certain value, the gain is almost unchanged while the bias voltage is increased, which leads to increased power consumption.
2) When the transistor is biased to be close to the threshold voltage, although the gain of the transistor can be obviously changed, in this case, the gain is sensitive to the fluctuation of the bias voltage, and the requirement on the precision of the bias voltage is high. And since the threshold voltage of the transistor varies with temperature, this causes the gain to fluctuate significantly with temperature.
3) Under a specific process corner, if a lower bias voltage is adopted, the possibility of entering a subthreshold region exists, and the robustness of the circuit is reduced.
The second type is power control based on an attenuator, that is, the output end of the power amplifier is connected in series with the attenuator to realize power control, which can realize a large dynamic range and realize linear power control, but the power control scheme has the disadvantage that the output power of the power amplifier is always unchanged no matter what mode the output power is in, and the efficiency of the transmitter system is directly reduced when the attenuator is operated in an attenuation state.
The above-mentioned problems need to be solved, and a millimeter wave power amplifier and a power control method based on CMOS process are proposed.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to solve the technical problem existing in the power control of the conventional power amplifier and ensure that the power consumption of the amplifier is reduced along with the reduction of the output power so as to keep relatively high efficiency, the millimeter wave power amplifier based on the CMOS process is provided, and the power amplifier controls the on-off quantity of the transistors in the amplifying unit through a multi-bit digital code so as to realize the output power control of the amplifier.
The invention solves the technical problem through the following technical scheme, and the invention comprises a first amplifying unit, a second amplifying unit, a third amplifying unit, a fourth amplifying unit, a fifth amplifying unit, a power distribution network, a power synthesis network and a bias switch control unit; the first amplifying unit outputs two paths of signals through the power distribution network and is respectively connected with the second amplifying unit and the fourth amplifying unit, the second amplifying unit is connected with the third amplifying unit, the fourth amplifying unit is connected with the fifth amplifying unit, the fourth amplifying unit and the fifth amplifying unit output and synthesize one path of output signals through the power synthesis network, and the bias switch control unit is respectively connected with the fourth amplifying unit and the fifth amplifying unit; the second amplification unit and the fourth amplification unit are both connected with a first control signal, the third amplification unit and the fifth amplification unit are both connected with a second control signal and a third control signal, the fourth amplification unit and the fifth amplification unit are both connected with a fourth control signal, and the power control of the power amplifier is realized by controlling the digital codes of the first control signal, the second control signal, the third control signal and the fourth control signal.
Furthermore, the input of the first amplifying unit is a single-ended signal, the output of the first amplifying unit is a differential signal, and the input and the output of the second amplifying unit, the third amplifying unit, the fourth amplifying unit and the fifth amplifying unit are differential signals.
Furthermore, the millimeter wave power amplifier further comprises a first transformer and a second transformer, the output of the second amplifying unit is connected with the primary coil of the first transformer, the secondary coil of the first transformer is connected with a third amplifying unit with variable gain, the output of the fourth amplifying unit is connected with the primary coil of the second transformer, and the secondary coil of the second transformer is connected with a fifth amplifying unit with variable gain.
Furthermore, the circuit structures of the first amplifying unit, the second amplifying unit, the third amplifying unit, the fourth amplifying unit and the fifth amplifying unit all adopt a common source differential amplifier structure based on cross coupling capacitance.
Furthermore, the transistors used by the second amplifying unit and the fourth amplifying unit have the same size, and the transistors used by the third amplifying unit and the fifth amplifying unit have the same size.
Furthermore, two paths in the second amplifying unit and the fourth amplifying unit respectively comprise two transistors with the same size, the source stage of one transistor in each path is grounded, the source stage of the other transistor is connected in series with a switching tube, and the grid electrode of the switching tube is controlled by a first control signal to enable the corresponding transistor to be switched on or switched off.
Furthermore, two paths in the third amplification unit and the fifth amplification unit respectively comprise three transistors with the same size, the source of one transistor in each path is grounded, the sources of the other two transistors are respectively connected in series with a switching tube, and the two switching tubes respectively control the grids of the switching tubes through a second control signal and a third control signal so as to enable the corresponding transistors to be switched on or off.
Furthermore, the third amplifying unit and the fifth amplifying unit control the bias voltage of the third amplifying unit and the fifth amplifying unit to be 0 or the working voltage through a fourth control signal, and control the third amplifying unit and the fifth amplifying unit to be turned on or turned off.
Furthermore, the first, second, third and fourth control signals are digital input signals, the high level is 1, the low level is 0, the correspondingly controlled transistor or amplifying unit works at the high level, and the correspondingly controlled transistor or amplifying unit does not work at the low level.
The invention also provides a power control method of the millimeter wave power amplifier based on the CMOS process, which is used for carrying out power control on the millimeter wave power amplifier and comprises the following steps:
s1: the level of the first control signal, the level of the second control signal, the level of the third control signal and the level of the fourth control signal are changed through the control voltage;
s2: and selecting a control code according to the power control requirement to control the output power of the whole power amplifier.
Further, in step S2, when the first, second, third and fourth control signals are 1111 times in sequence, the power amplifier operates at the gear position where the output power is maximum; when the first control signal, the second control signal, the third control signal and the fourth control signal are 0000 in sequence, the output power of the power amplifier is minimum; in yet other control codes, the power amplifier output power is between a maximum output power and a minimum output power with a gradient separation.
Compared with the prior art, the invention has the following advantages: the millimeter wave power amplifier based on the CMOS process adjusts the output power by controlling the work or the non-work of a specific MOS tube of a single-stage amplification unit, specifically, for a certain MOS tube, only the work state and the non-work state are realized, and the multi-gear adjustability is realized by improving the number of a plurality of on-off controllable transistors; when the highest output power is in a gear, all the working transistors of the power amplifier work, the working current is the largest, the output power is reduced, the number of the working transistors of the power amplifier is reduced, and the power consumption is reduced; compared with a power control mode based on an attenuator, the power consumption is lower and the efficiency is higher when the power control mode works at low output power; the power control is realized by connecting the transistor source level in series with the switching tube in the amplifying unit, and compared with other power control modes, the power control circuit reduces the area and the cost of a chip and is worthy of being popularized and used.
Drawings
FIG. 1 is a block diagram of an overall architecture of an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a first amplifying unit in the embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a second/fourth amplifying unit in the embodiment of the present invention;
fig. 4 is a schematic circuit diagram of a third/fifth amplifying unit in the embodiment of the present invention;
fig. 5 is a schematic diagram of bias switch control of the third amplification unit and the fifth amplification unit in the embodiment of the present invention.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
As shown in fig. 1 to 5, the present embodiment provides a technical solution: a millimeter wave power amplifier based on a CMOS (complementary metal oxide semiconductor) process comprises a first amplifying unit 11, a second amplifying unit 12, a third amplifying unit 13, a fourth amplifying unit 14, a fifth amplifying unit 15, a power distribution network and a power synthesis network;
a radio frequency input signal is converted into a differential signal through a first balun T1 and then enters a first amplifying unit 11, one path of differential signal output by the first amplifying unit 11 is connected to a power distribution network to output two paths of differential signals, one path of output of the two paths of differential signals is connected to a second amplifying unit 12 with variable gain, the output of the second amplifying unit 12 is connected to a primary coil of a first transformer T3, and a secondary coil of the first transformer T3 is connected to a third amplifying unit 13 with variable gain; the other output of the two paths of differential signals is connected with a fourth amplifying unit 14 with variable gain, the output of the fourth amplifying unit 14 is connected with a primary coil of a second transformer T5, a secondary coil of the second transformer T5 is connected with a fifth amplifying unit 15 with variable gain, the differential output of the third amplifying unit 13 and the differential output of the fifth amplifying unit 15 are connected with a power synthesis network, and one path of output signal is output through the power synthesis network; the second amplifying unit 12 and the fourth amplifying unit 14 are connected to a first control signal VC1, the third amplifying unit 13 and the fifth amplifying unit 15 are connected to a second control signal VC2 and a third control signal VC3, the fourth amplifying unit 14 and the fifth amplifying unit 15 are further connected to a fourth control signal VC4, and power control of the power amplifier can be realized by controlling digital codes of the first, second, third, and fourth control signals.
In this embodiment, the first amplifying unit 11 has a single-ended input and a differential output, and the second, third, fourth, and fourth inputs and outputs are differential signals.
In this embodiment, the first, second, third, fourth, and fifth amplification unit circuit structures adopt a common source differential amplifier structure based on cross-coupled capacitance.
In this embodiment, the transistors used by the second and fourth amplifying units have the same size, and the transistors used by the third and fifth amplifying units have the same size.
In this embodiment, each of the transistors used by the second and fourth amplification units for signal amplification includes two transistors M2, M3/transistors M5, M6 with the same size, wherein the source of the transistor M2/M5 is grounded, the source of the transistor M3/M6 is connected in series with a switching tube M4/M7, and the switching tube M4/M7 controls the gate of the switching tube through an external control signal Vctrl1 (i.e., a control signal VC1) to turn on or off the corresponding transistor.
In this embodiment, the transistors used by the third and fifth amplification units for signal amplification in the common-source differential amplifier each include three transistors M8, M9, M11/M13, M14, and M16 with the same size, wherein the source of the transistor M8/M13 is grounded, and the source of the transistors M9, M11/M14, and M16 respectively correspond to one switching tube M10, M12/M15, and M17 in series, and the gates of the switching tubes are controlled by the external control signals Vctrl2 (i.e., the control signal VC2) and Vctrl3 (i.e., the control signal VC3), respectively, so as to turn on or off the corresponding transistors.
In this embodiment, the third and fifth amplifying units can control the bias voltage of the third and fifth amplifiers to be 0 or the working voltage by the external control signal Vctrl4 (i.e., the control signal VC4), so as to control the third and fifth amplifiers to be turned on or off.
The embodiment also provides a power control method of the millimeter wave power amplifier, which comprises the following steps:
s1: the control voltages Vctrl1, Vctrl2, Vctrl3 and Vctrl4 are digital input signals, the high level is 1, the low level is 0, the correspondingly controlled transistor or amplifying unit works at the high level, and the correspondingly controlled transistor or amplifying unit does not work at the low level;
s2: when Vctrl1, Vctrl2, Vctrl3 and Vctrl4 are 1111 in sequence, the power amplifier works in a gear with the maximum output power; the output power of the power amplifier is minimum, wherein the output power of the power amplifier is 0000 in sequence from Vctrl1, Vctrl2, Vctrl3 and Vctrl 4; under still other control codes, the power amplifier output power is between the maximum output power and the minimum output power and has a gradient spacing.
In summary, the millimeter wave power amplifier based on the CMOS process according to the above embodiment adjusts the output power by controlling the operation or non-operation of the specific MOS transistor of the single-stage amplification unit, specifically, for a certain MOS transistor, only two states of operation and non-operation are provided, and by increasing the number of the plurality of on-off controllable transistors, multi-stage adjustment is achieved, which has a wider adjustment range and reduces the influence of process angle and temperature variation on the circuit compared to a power control method for adjusting the bias voltage value; when the highest output power is in a gear, all the working transistors of the power amplifier work, the working current is the largest, the output power is reduced, the number of the working transistors of the power amplifier is reduced, and the power consumption is reduced; compared with a power control mode based on an attenuator, the power consumption is lower and the efficiency is higher when the power control mode works at low output power; the power control is realized by connecting the transistor source level in series with the switching tube in the amplifying unit, and compared with other power control modes, the power control circuit reduces the area and the cost of a chip and is worthy of being popularized and used.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A millimeter wave power amplifier based on CMOS technology is characterized in that: the device comprises a first amplifying unit, a second amplifying unit, a third amplifying unit, a fourth amplifying unit, a fifth amplifying unit, a power distribution network, a power synthesis network and a bias switch control unit; the first amplifying unit outputs two paths of signals through the power distribution network and is respectively connected with the second amplifying unit and the fourth amplifying unit, the second amplifying unit is connected with the third amplifying unit, the fourth amplifying unit is connected with the fifth amplifying unit, the fourth amplifying unit and the fifth amplifying unit output and synthesize one path of output signals through the power synthesis network, and the bias switch control unit is respectively connected with the fourth amplifying unit and the fifth amplifying unit; the second amplification unit and the fourth amplification unit are both connected with a first control signal, the third amplification unit and the fifth amplification unit are both connected with a second control signal and a third control signal, the fourth amplification unit and the fifth amplification unit are both connected with a fourth control signal, and the power control of the power amplifier is realized by controlling the digital codes of the first control signal, the second control signal, the third control signal and the fourth control signal.
2. The millimeter wave power amplifier based on the CMOS process as claimed in claim 1, wherein: the input of the first amplifying unit is a single-ended signal, the output of the first amplifying unit is a differential signal, and the input and the output of the second amplifying unit, the third amplifying unit, the fourth amplifying unit and the fifth amplifying unit are differential signals.
3. The millimeter wave power amplifier based on the CMOS process as claimed in claim 1, wherein: the millimeter wave power amplifier further comprises a first transformer and a second transformer, the output of the second amplifying unit is connected with the primary coil of the first transformer, the secondary coil of the first transformer is connected with a third amplifying unit with variable gain, the output of the fourth amplifying unit is connected with the primary coil of the second transformer, and the secondary coil of the second transformer is connected with a fifth amplifying unit with variable gain.
4. The millimeter wave power amplifier based on the CMOS process as claimed in claim 1, wherein: the circuit structures of the first amplification unit, the second amplification unit, the third amplification unit, the fourth amplification unit and the fifth amplification unit all adopt a common source differential amplifier structure based on cross coupling capacitance.
5. The millimeter wave power amplifier based on the CMOS process as claimed in claim 1, wherein: the transistors used by the second amplifying unit and the fourth amplifying unit have the same size, and the transistors used by the third amplifying unit and the fifth amplifying unit have the same size.
6. The millimeter wave power amplifier based on the CMOS process as claimed in claim 4, wherein: two paths in the second amplification unit and the fourth amplification unit respectively comprise two transistors with the same size, the source stage of one transistor in each path is grounded, the source stage of the other transistor is connected with a switching tube in series, and the grid electrode of the switching tube is controlled through a first control signal to enable the corresponding transistor to be switched on or switched off.
7. The millimeter wave power amplifier based on the CMOS process as claimed in claim 4, wherein: two paths in the third amplification unit and the fifth amplification unit respectively comprise three transistors with the same size, the source stage of one transistor in each path is grounded, the source stages of the other two transistors are respectively connected in series with a switching tube, and the two switching tubes respectively control the grids of the switching tubes through a second control signal and a third control signal so as to enable the corresponding transistors to be switched on or switched off.
8. The millimeter wave power amplifier based on the CMOS process as claimed in claim 4, wherein: the third amplification unit and the fifth amplification unit control the bias voltage of the third amplification unit and the fifth amplification unit to be 0 or working voltage through a fourth control signal, and control the connection or disconnection of the third amplification unit and the fifth amplification unit.
9. A power control method of a millimeter wave power amplifier based on a CMOS process, which is used for performing power control on the millimeter wave power amplifier of any one of claims 1 to 8, and comprises the following steps:
s1: the level of the first control signal, the level of the second control signal, the level of the third control signal and the level of the fourth control signal are changed through control voltage, the high level is 1, the low level is 0, the correspondingly controlled transistor or amplifying unit works at the high level, and the correspondingly controlled transistor or amplifying unit does not work at the low level;
s2: and selecting a control code according to the power control requirement to control the output power of the whole power amplifier.
10. The power control method of the millimeter wave power amplifier based on the CMOS process as claimed in claim 9, wherein: in step S2, when the first, second, third, and fourth control signals are 1111 times in sequence, the power amplifier operates in the gear with the maximum output power; when the first control signal, the second control signal, the third control signal and the fourth control signal are 0000 in sequence, the output power of the power amplifier is minimum; in yet other control codes, the power amplifier output power is between a maximum output power and a minimum output power with a gradient separation.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023040201A1 (en) * | 2021-09-16 | 2023-03-23 | 深圳飞骧科技股份有限公司 | Radio-frequency power amplifier based on transformer matching network |
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