CN112953192B - Method for determining integrated gate commutated thyristor power module buffer circuit - Google Patents
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- H—ELECTRICITY
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
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- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a method for determining a buffer circuit of an integrated gate commutated thyristor power module, which comprises the steps of determining a commutating reactor and determining a clamping circuit device; the determination of the converter reactor comprises the selection of parameters and types of the converter reactor; the determination of the clamp circuit comprises selection of parameters and types of the clamp circuit devices; the clamping circuit device comprises a clamping capacitor, a clamping diode and a clamping resistor; the determination method provided by the invention integrates the selection of each device parameter in the circuit and the type suitable for the device parameter, and has strong operability and practicability. The invention comprehensively considers the factors of inhibiting oscillation, improving working frequency, reducing cost, facilitating heat dissipation, facilitating compact design and the like, and is suitable for engineering application.
Description
Technical Field
The invention belongs to the field of flexible power transmission, and particularly relates to a method for determining a buffer circuit of an integrated gate commutated thyristor power module.
Background
In an IGCT (integrated gate commutated thyristor) power module (such as a half-bridge module, a full-bridge module, and a diode clamping three-level module) adopted in the field of flexible power transmission, compared with an IGBT (insulated gate bipolar transistor) isobaric control type device, because the IGCT device is in positive feedback during the switching-on process and has a high switching-on speed, a commutating reactor is usually arranged to limit di/dt in the switch transient process so as to avoid the semiconductor device from being damaged by the excessively high di/dt. In order to eliminate overvoltage brought by the converter reactor in the turn-off process, a clamping circuit comprising a clamping capacitor, a clamping diode and a clamping resistor is also required to be arranged. The clamping circuit limits the highest value of a part of voltage in the circuit under a certain fixed voltage, and has the function of reducing overvoltage caused by the converter reactor in the switching transient process so as to protect a semiconductor device. The clamping action of the diode means that the potential of a certain point in the circuit is limited by utilizing the characteristics that the forward conduction voltage drop of the diode is relatively stable and the value is small, and various factors need to be considered for determining each device in the buffer circuit so as to better avoid the damage of a power device in the circuit.
Disclosure of Invention
In order to solve the problems, the invention provides a method for determining a buffer circuit of an integrated gate commutated thyristor power module.
The determination method comprises the steps of determining a converter reactor and determining a clamping circuit device;
wherein,
the determination of the converter reactor comprises the determination of the parameter and the type of the converter reactor;
the determination of the clamp circuit includes a determination of a parameter and a type of the clamp circuit device.
The clamping circuit device comprises a clamping capacitor, a clamping diode and a clamping resistor;
the parameters of the converter reactor comprise the inductance value of the converter reactor and the rated current of the converter reactor;
the parameters of the clamping circuit device comprise capacitance value of a clamping capacitor, rated voltage of the clamping capacitor, peak current of the clamping capacitor, highest tolerance voltage between poles of a clamping diode, surge endured by the clamping diode, resistance value of a clamping resistor, short-time maximum dissipation energy of the clamping resistor, rated power of the clamping resistor and maximum voltage endured by the clamping resistor.
Further, the inductance value L of the converter reactor satisfies the following conditions: u. of SMmax /L＜(di/dt) max ；
u SMmax The maximum working voltage of the power module; l is the inductance value of the converter reactor; (di/dt) max Maximum current rate of change, nominal for fast recovery diode or IGCT;
the rated current of the converter reactor meets the following requirements: i is Forehead (forehead) ≥I Lrms ；
I Forehead (forehead) Rated current of the converter reactor; i is Lrms Is the effective value of the current flowing through the converter reactor;
selection of the type of the converter reactor: and one of a water-cooling reactor or a self-cooling reactor made of metal winding is selected.
And determining the capacitance value of the clamping capacitor: the capacitance value of the clamping capacitor is required to ensure that the voltage generated on the clamping capacitor due to the action of the clamping circuit is not higher than the highest tolerance voltage between electrodes of the power device when the power module is switched under the maximum working voltage and the working current;
determination of rated voltage of the clamping capacitor: the rated voltage of the clamping capacitor is greater than or equal to the interpolar highest withstand voltage of the power devices;
determination of the peak current of the clamping capacitor: the peak current of the clamping capacitor is greater than or equal to the maximum working current of the power module;
determination of the type of the clamping capacitance: the clamping capacitor is a capacitor with a noninductive structure.
And the peak current of the clamping capacitor is more than or equal to the reverse recovery peak current of the clamping diode when the maximum working voltage and the working current are switched.
Further, the determination of the highest withstand voltage between the clamping diodes: the highest tolerance voltage between the clamping diodes is more than or equal to the highest tolerance voltage between the IGCT poles and the highest tolerance voltage between the main circuit diodes;
surge I tolerated by the clamping diode 2 Determination of t: surge I tolerated by the clamping diode 2 t is greater than or equal to the maximum working voltage and I generated on the clamping diode when the clamping circuit acts under the working current 2 t；
Determination of the type of the clamping diode: the clamping diode is a crimping type fast recovery diode.
Further, the selection of the resistance value of the clamp resistor: the resistance value of the clamping resistor is selected according to the critical damping point of the clamping circuit;
the short-time maximum dissipated energy of the clamping resistor is more than or equal to the energy stored by the anode impedance under the maximum working current of the power module;
determination of the rated power of the clamping resistor: the rated power of the clamping resistor is more than or equal to the clamping resistor power under the maximum working voltage and the working current of the power module;
the maximum voltage endured by the clamping resistor is the voltage increment which can appear on the clamping capacitor when the power module performs power device switching action with the maximum current under the rated direct current voltage;
determination of the type of the clamping resistance: the clamping resistor is one of a crimping resistor or an independent resistor.
Furthermore, the short-time maximum dissipation energy of the clamping resistor is also larger than or equal to the energy stored in the anode reactance under the reverse recovery peak current of the clamping diode when the clamping resistor is switched under the maximum working voltage and the working current.
Further, the method for selecting the critical damping point comprises the following steps:
in the formula, L A For selected inductance value, C, of converter reactor CL For a selected capacitance value of the clamping capacitor, R A The value of the clamp resistor should be selected.
Further, the power module is an IGCT module, including a half-bridge module, a full-bridge module, or a diode clamped three-level module.
The method for determining the converter reactor and the clamping device of the integrated gate-commutated thyristor power module provided by the invention specifies the selection of parameters of each device in the circuit and the type suitable for the selection, and has strong operability. The obtained device combination scheme comprehensively considers the factors of inhibiting oscillation, improving working frequency, reducing cost, facilitating heat dissipation, facilitating compact design and the like, and is suitable for engineering application.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 shows a schematic configuration diagram of a half-bridge module converter reactor and a clamping circuit according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The invention provides a method for determining a buffer circuit of an integrated gate commutated thyristor power module, and an IGCT (integrated gate commutated thyristor) is a novel power semiconductor switch device used in a giant power electronic assembly. IGCT integrates a GTO (gate-disconnected thyristor) chip with an anti-parallel diode and a gate drive circuit, and then is connected with a gate driver of the IGCT in a low-inductance mode at the periphery, combines the advantages of stable turn-off capability and low-pass loss of a transistor, and plays the performance of the thyristor in the turn-on stage, and the turn-off stage presents the characteristics of the transistor. The IGCT has the characteristics of large current, high voltage of resistance and disconnection, high switching frequency, high reliability, compact structure, low conduction loss and the like. Because the turn-on process of the IGCT device is positive feedback and the turn-on speed is very high, a converter reactor is usually arranged to limit di/dt in the transient process of the switch so as to avoid damaging the semiconductor device by the excessively high di/dt. In order to eliminate overvoltage brought by the converter reactor in the turn-off process, a clamping circuit comprising a clamping capacitor, a clamping diode and a clamping resistor is also required to be arranged.
The determination method comprises the steps of determining the converter reactor and determining the clamping circuit device;
the determination of the converter comprises the selection of parameters and types of the converter reactor; the determination of the clamp circuit comprises the selection of parameters and kinds of the clamp circuit devices;
the clamping circuit device comprises a clamping capacitor, a clamping diode and a clamping resistor.
The parameters of the converter reactor comprise the inductance value of the converter reactor and the rated current of the converter reactor;
the parameters of the clamping circuit device comprise a capacitance value of a clamping capacitor, a rated voltage of the clamping capacitor, a peak current of the clamping capacitor, a highest tolerance voltage between poles of a clamping diode, a surge endured by the clamping diode, a resistance value of a clamping resistor, a short-time maximum dissipation energy of the clamping resistor, a rated power of the clamping resistor and a maximum voltage endured by the clamping resistor.
The determination schemes of the converter reactor, the clamping capacitor, the clamping diode and the clamping capacitor need to follow the following methods
(1) Determination of the converter reactor:
a. the inductance value of the converter reactor can limit di/dt of the power module in switching operation under the maximum working voltage within the maximum value allowed by the device,
namely: u. u SMmax /L＜(di/dt) max
u SMmax The maximum working voltage of the power module; l is the inductance value of the converter reactor; (di/dt) max The maximum value of the rate of change of current, which is nominal for a fast recovery diode or IGCT.
b. Rated current I of converter reactor Forehead (forehead) Should not be less than the effective value I of the current flowing through the converter reactor obtained by simulation test software or theoretical calculation Lrms . The method for calculating the effective value of the current flowing through the converter reactor can adopt an average equivalent method, takes a half-bridge module as an example, and has the following specific calculation formula:
wherein k is instantaneous modulation ratio, the current number of the bridge arm input modules calculated according to the reference voltage is in proportion to the total number of the bridge arm modules, and u is dc Represents the value of the direct-current side bus voltage of the MMC,
representing an MMC (modular multilevel converter) alternating-current side phase voltage instantaneous value; I.C. A Lrms Is the effective value of the current of the converter reactor, i arm Expressed as bridge arm current transient, T is a fundamental period.
According to the control of the converter valve level, the number of the modules to be put into the bridge arm where the determined module to be analyzed is located is the number of the modules to be put into the bridge arm.
c. The converter reactor can be a water-cooled reactor or a self-cooled reactor wound by a metal bar. For the water-cooled reactor, the structural strength of the water-cooled reactor is to ensure that the water cannot leak and burst when a straight-through fault occurs; for the self-cooling reactor wound by the metal bar, the shape design of the self-cooling reactor ensures that the metal surface is not overheated (for example, not more than 100 ℃) when the self-cooling reactor works, and the structural strength of the self-cooling reactor ensures that the metal bar is not broken when a direct connection fault occurs, and the deformation of the self-cooling reactor does not push the side shell of the power module open. The self-cooling reactor can be wound by thick copper bars, so that the self-cooling reactor has smaller direct-current resistance. When the rated current of the power module converter reactor is larger, a self-cooling reactor is preferably adopted to reduce loss.
(2) Determination of the clamping capacitance:
a. the capacitance value of the clamping capacitor is to ensure that the voltage generated on the clamping capacitor due to the action of the clamping circuit is not higher than the highest withstand voltage between electrodes of the power device when the power module is switched under the maximum working voltage and the working current.
b. The rated voltage of the clamping capacitor is not less than the highest withstand voltage between electrodes of the power device, and the power device comprises power semiconductor devices such as an IGCT (integrated gate commutated thyristor) and a main circuit diode.
c. The peak current of the clamping capacitor should be not less than the maximum working current of the power module, and not less than the reverse recovery peak current of the fast recovery diode when the maximum working voltage and the working current are switched, and the power module refers to a half-bridge module (shown in fig. 1), a full-bridge module and a diode clamping three-level module.
d. The clamping capacitor is a high-reliability capacitor with a non-inductive structure, for example, a metallized polypropylene film capacitor can be adopted.
(3) Determination of the clamping diode:
a. the highest tolerance voltage between poles of the clamping diode is not less than the highest tolerance voltage between poles of power devices such as the IGCT and the main circuit diode.
b. Surge I endured by clamp diode 2 t should be not less than I generated on the clamping diode when the clamping circuit acts under the maximum working voltage and current obtained by simulation test software 2 t. Since the clamping diode only briefly flows during the clamping action, the aforementioned I is ensured 2 On the basis of the t requirement, the current specification of the clamping diode can be smaller than that of the main circuit diode, so that the cost is reduced.
c. The clamping diode is a crimping type fast recovery diode and can be crimped together with a main circuit power device, so that the compact design is facilitated. The fast recovery characteristic can avoid oscillation of the clamping circuit, and the working frequency of the clamping circuit is improved.
(4) Determination of the clamping resistance:
a. resistance value R of clamping resistor A If the clamping circuit is close to the critical damping point, the voltage attenuation of the clamping capacitor is slow due to the over-high resistance value; the current attenuation of the converter reactor is slow due to too low resistance, and the working frequency of the clamping circuit is reduced due to too high or too low resistance.
The selection method of the critical damping point comprises the following specific steps:
and regarding the clamping diode as a short circuit, the second-order circuit characteristic equation of the converter reactor and the clamping circuit is as follows:
the characteristic root of this equation is:
critical damping point, discriminant
In the formula, L A For selected inductance, C, of converter reactors CL For a selected capacitance value of the clamping capacitor, R A Is the value of the clamp resistor di to be selected L The first derivative of the current of the converter reactor with respect to time is represented by/dt, (di) L /dt) 2 Representing the second derivative of the converter reactor current with respect to time, i L And the current of the converter reactor in the transient process of the circuit when the power module is switched is represented.
b. In a single action, the anode reactive energy will eventually dissipate at the clamp resistance. The maximum energy dissipated in the short time of the clamp resistor should not be less than the energy stored in the anode reactance under the following two currents: i. the maximum working current of the power module; and ii, the reverse recovery peak current of the fast recovery diode when the maximum working voltage and the working current are switched. The rated power of the clamping resistor is not less than the power of the clamping resistor under the maximum working voltage and the working current of the power module obtained by simulation, and the simulation can be carried out by building a simulation model according to the parameter design of the clamping capacitor, the clamping resistor and the anode reactance. In particular, conventional electrical parametric simulation software, such as MATLAB R2018b or PSCAD 4.5, may be used.
c. The maximum voltage endured by the clamping resistor is the voltage increment which can appear on the clamping capacitor when the power module performs the switching action of the power device with the maximum current under the rated direct current voltage.
d. The clamping resistor can be a crimping resistor or an independent resistor. When the rated current of the power module is large (namely, the non-water-cooling resistor cannot meet the heat dissipation requirement), the rated frequency is high, and the thermal power of the clamping resistor is large, the crimping resistor is selected to dissipate heat by a water-cooling radiator. Otherwise, an independent resistor can be selected and the connected copper bar is used for heat dissipation, so that the cost is reduced.
Exemplaryly,
referring to fig. 1, fig. 1 shows a schematic diagram of a typical half-bridge modular converter reactor, clamp circuit configuration, which is only one of the configurations of the present method. In fig. 1, the IGCT power module includes a converter reactor Ls, a clamping resistor Rs, a clamping capacitor Cs, a clamping diode Ds, a main circuit diode D1, a main circuit diode D2, a first IGCT T1, and a second IGCT T2. T1 and T2 are connected in anti-parallel with a main circuit diode D1 and a main circuit diode D2, respectively. One electrode of the capacitor is connected with one end of a converter reactor Ls and one end of a resistor Rs, the other end of the converter reactor Ls is connected with the anode of a clamping diode Ds and the anode of a first IGCT T1, the cathode of the clamping diode Ds is connected with the other end of the clamping resistor Rs and one electrode of a clamping capacitor Cs, the other electrode of the clamping capacitor Cs is connected with the other electrode of the capacitor, the cathode of the first IGCT T1 is connected with the anode of a second IGCT T2, and the cathode of the second IGCT T2 is connected with the other electrode of the clamping capacitor Cs.
Illustratively, the specific parameters of each device in fig. 1 are selected as follows: for the power module shown in fig. 1, if the rated voltage of the power module is 2100V, the maximum operating voltage u of the power module SMmax 3000V, and a maximum device-to-device withstand voltage of 4500V. Module rated current 1700A, maximum off current 4000A, rated frequency 150Hz, maximum rate of change of current (di/dt) of power device max 5000A/us, then:
under the highest working voltage of 3000V, the current change rate of the power device is limited to 5000A/us, and then the inductance value of the required converter reactor is not less than: l = u SMmax /(di/dt) max =0.6uH, 0.8uH being chosen in order to leave a certain margin. The effective value of the current flowing through the converter reactor is 958A by calculation method of the effective value of the current flowing through the converter reactor, and the self-cooling power can be wound by copper bars with rated current of 1200AA reactor.
If the device is turned off, all energy in the converter reactor is transferred to the clamping capacitor C CL The method comprises the following steps:
if i =4000A, the converter reactor L =0.8uH, and the voltage rise U' of the clamp capacitor is 1500V, C is calculated CL =5.69uF, 6uF may be used. The clamp capacitor has a rated voltage of 4500V and a peak current of 4000A.
The value of the clamping resistance is 0.183 omega calculated according to a critical damping formula, so that the clamping resistance of 0.2 omega can be selected. And (3) building a simulation model of the clamping circuit, wherein the voltage difference between two ends of the clamping resistor can reach 510V during the clamping action, and the energy dissipation of the clamping circuit is 2.6J during the single action. The resistance withstand voltage of 800V and the short-time maximum dissipation energy of 4J can be selected. Because the rated current and the rated frequency of the module respectively reach 1700A and 150Hz, the pressure-connected water-cooling resistor can be selected to be beneficial to heat dissipation.
The maximum withstanding voltage between the clamping diodes is 4500V. Obtaining clamping diode I in single action of clamping in simulation model 2 t is 12A 2 And s. Optionally I 2 t＝20A 2 The crimping type fast recovery diode above s is used as a clamping diode.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A method for determining a buffer circuit of an integrated gate commutated thyristor power module,
the determination method comprises the steps of determining a converter reactor and determining a clamping circuit device;
wherein,
the determination of the converter reactor comprises the determination of the parameters and the type of the converter reactor;
the determination of the clamp circuit device comprises a determination of a parameter and a type of the clamp circuit device;
the clamping circuit device comprises a clamping resistor, and parameters of the clamping resistor comprise the resistance value of the clamping resistor, the short-time maximum dissipation energy of the clamping resistor, the rated power of the clamping resistor and the maximum voltage endured by the clamping resistor; the resistance value of the clamping resistor is selected according to the critical damping point of the clamping circuit; the short-time maximum dissipated energy of the clamping resistor is more than or equal to the energy stored by the anode impedance under the maximum working current of the power module; the rated power of the clamping resistor is more than or equal to the clamping resistor power under the maximum working voltage and the working current of the power module; the maximum voltage endured by the clamping resistor is the voltage increment which can appear on the clamping capacitor when the power module performs power device switching action with the maximum current under the rated direct current voltage; the short-time maximum dissipation energy of the clamping resistor is also larger than the energy stored by the anode reactance under the reverse recovery peak current of the clamping diode when the clamping resistor is switched under the maximum working voltage and the working current.
2. The method of determining an integrated gate-commutated thyristor power module snubber circuit of claim 1,
the clamping circuit device further comprises a clamping capacitor and a clamping diode;
the parameters of the converter reactor comprise the inductance value of the converter reactor and the rated current of the converter reactor;
the parameters of the clamping circuit device comprise a capacitance value of a clamping capacitor, a rated voltage of the clamping capacitor, a peak current of the clamping capacitor, the highest withstand voltage between poles of a clamping diode and the surge endured by the clamping diode.
3. The method of claim 2, wherein the step of determining the integrated gate commutated thyristor power module snubber circuit,
the inductance value L of the converter reactor meets the following conditions: u. u SMmax /L<(di/dt) max ；
In the formula u SMmax The maximum working voltage of the power module; l is the inductance value of the converter reactor; (di/dt) max The maximum value of the current change rate which is nominal for the fast recovery diode or the integrated gate commutated thyristor;
the rated current of the converter reactor meets the following requirements: i is Forehead (forehead) ≥I Lrms ；
I Forehead (forehead) Rated current is provided for the converter reactor; i is Lrms Is an effective value of the current flowing through the converter reactor;
determination of the type of the converter reactor: one of a water-cooling reactor or a self-cooling reactor made by metal winding and exhausting is selected.
4. The method of claim 2, wherein the step of determining the integrated gate commutated thyristor power module snubber circuit,
and the capacitance value of the clamping capacitor is determined: the capacitance value of the clamping capacitor is required to ensure that the voltage generated on the clamping capacitor due to the action of the clamping circuit is not higher than the highest tolerance voltage between electrodes of the power device when the power module is switched under the maximum working voltage and the working current;
determination of rated voltage of the clamping capacitor: the rated voltage of the clamping capacitor is greater than or equal to the highest tolerance voltage between electrodes of the power device;
determination of the peak current of the clamping capacitor: the peak current of the clamping capacitor is greater than or equal to the maximum working current of the power module;
determination of the type of the clamping capacitance: the clamping capacitor is a capacitor with a non-inductive structure.
5. The method of claim 4, wherein the step of determining the integrated gate commutated thyristor power module snubber circuit,
and the peak current of the clamping capacitor is more than or equal to the reverse recovery peak current of the clamping diode when the maximum working voltage and the working current are switched.
6. The method of claim 2, wherein the step of determining the integrated gate commutated thyristor power module snubber circuit,
determination of the highest withstand voltage between the clamping diodes: the highest tolerance voltage between the clamping diodes is more than or equal to the highest tolerance voltage between the integrated gate commutated thyristor and the highest tolerance voltage between the main circuit diodes;
surge I tolerated by the clamping diode 2 Determination of t: surge I tolerated by the clamping diode 2 t is greater than or equal to the surge I generated on the clamping diode when the clamping circuit acts under the maximum working voltage and the working current 2 t；
Determination of the type of the clamping diode: the clamping diode is a crimping type fast recovery diode.
7. The method of claim 2, wherein the step of determining the integrated gate commutated thyristor power module snubber circuit,
determination of the type of the clamping resistance: the clamping resistor is one of a crimping resistor or an independent resistor.
8. The method of claim 7, wherein the step of determining the integrated gate commutated thyristor power module snubber circuit,
the critical damping point
In the formula, L A For selected inductance value, C, of converter reactor CL For a selected capacitance value of the clamping capacitor, R A The value of the clamp resistor is selected.
9. The integrated gate commutated thyristor power module snubber circuit defined in any one of claims 1 to 8,
the power module is an IGCT module and comprises a half-bridge module, a full-bridge module or a diode clamping three-level module.
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|---|---|---|---|---|
| US5982646A (en) * | 1998-06-30 | 1999-11-09 | General Electric Company | Voltage clamp snubbers for three level converter |
| CN103401408B (en) * | 2013-07-03 | 2015-05-27 | 西安交通大学 | Direct current side circuit of IGCT (integrated gate commutated thyristor) converter/test circuit and method for designing parameters of clamp capacitor and clamp resistor of direct current side circuit |
| CN106570261B (en) * | 2016-11-03 | 2019-12-20 | 中国科学院电工研究所 | Parameter extraction method for integrated gate pole commutation thyristor drive and follow current loop |
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2021
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