CN112951935B - 一种双面电池组件 - Google Patents
一种双面电池组件 Download PDFInfo
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- CN112951935B CN112951935B CN202110134606.4A CN202110134606A CN112951935B CN 112951935 B CN112951935 B CN 112951935B CN 202110134606 A CN202110134606 A CN 202110134606A CN 112951935 B CN112951935 B CN 112951935B
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- 239000002105 nanoparticle Substances 0.000 claims abstract description 49
- 239000002313 adhesive film Substances 0.000 claims abstract description 39
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 10
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 10
- 239000004611 light stabiliser Substances 0.000 claims abstract description 9
- 150000002978 peroxides Chemical class 0.000 claims abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 16
- -1 -tert-butyl dicumyl peroxide Chemical compound 0.000 claims description 6
- 229940116351 sebacate Drugs 0.000 claims description 6
- CXMXRPHRNRROMY-UHFFFAOYSA-L sebacate(2-) Chemical compound [O-]C(=O)CCCCCCCCC([O-])=O CXMXRPHRNRROMY-UHFFFAOYSA-L 0.000 claims description 6
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 5
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 claims description 5
- FIYMNUNPPYABMU-UHFFFAOYSA-N 2-benzyl-5-chloro-1h-indole Chemical compound C=1C2=CC(Cl)=CC=C2NC=1CC1=CC=CC=C1 FIYMNUNPPYABMU-UHFFFAOYSA-N 0.000 claims description 4
- XOUQAVYLRNOXDO-UHFFFAOYSA-N 2-tert-butyl-5-methylphenol Chemical compound CC1=CC=C(C(C)(C)C)C(O)=C1 XOUQAVYLRNOXDO-UHFFFAOYSA-N 0.000 claims description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 claims description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 claims description 3
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 claims description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 3
- KNSXNCFKSZZHEA-UHFFFAOYSA-N [3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical class C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C KNSXNCFKSZZHEA-UHFFFAOYSA-N 0.000 claims description 3
- 235000010354 butylated hydroxytoluene Nutrition 0.000 claims description 3
- NZYMWGXNIUZYRC-UHFFFAOYSA-N hexadecyl 3,5-ditert-butyl-4-hydroxybenzoate Chemical group CCCCCCCCCCCCCCCCOC(=O)C1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NZYMWGXNIUZYRC-UHFFFAOYSA-N 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 3
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 claims description 2
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 claims description 2
- GTELLNMUWNJXMQ-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO GTELLNMUWNJXMQ-UHFFFAOYSA-N 0.000 claims description 2
- ODJQKYXPKWQWNK-UHFFFAOYSA-L 3-(2-carboxylatoethylsulfanyl)propanoate Chemical compound [O-]C(=O)CCSCCC([O-])=O ODJQKYXPKWQWNK-UHFFFAOYSA-L 0.000 claims description 2
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 claims description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 2
- 239000007983 Tris buffer Substances 0.000 claims description 2
- 229920004890 Triton X-100 Polymers 0.000 claims description 2
- 239000013504 Triton X-100 Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 claims description 2
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 claims description 2
- 229920000053 polysorbate 80 Polymers 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 abstract description 10
- 238000002834 transmittance Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 229910001414 potassium ion Inorganic materials 0.000 abstract description 5
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 18
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004408 titanium dioxide Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 239000012945 sealing adhesive Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- BSKJUAKMZZKMKC-UHFFFAOYSA-N 1,2-ditert-butyl-3,4-di(propan-2-yl)benzene Chemical compound CC(C)C1=CC=C(C(C)(C)C)C(C(C)(C)C)=C1C(C)C BSKJUAKMZZKMKC-UHFFFAOYSA-N 0.000 description 1
- HXIQYSLFEXIOAV-UHFFFAOYSA-N 2-tert-butyl-4-(5-tert-butyl-4-hydroxy-2-methylphenyl)sulfanyl-5-methylphenol Chemical compound CC1=CC(O)=C(C(C)(C)C)C=C1SC1=CC(C(C)(C)C)=C(O)C=C1C HXIQYSLFEXIOAV-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- 239000005346 heat strengthened glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/04—Homopolymers or copolymers of ethene
- C09J123/08—Copolymers of ethene
- C09J123/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
- C09J123/0853—Vinylacetate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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Abstract
本发明公开了一种双面电池组件，包括框架和自上而下依次叠层设于框架内的玻璃、上层胶膜、电池、下层胶膜、盖板。所述的下层胶膜的质量份组成如下：基体EVA树脂100份、改性纳米粒子0.1～30份、过氧化物交联剂0.01～2份、助交联剂0.1～5份、光稳定剂0.01～5份、抗氧剂0.05～3份。本发明中，采用双层EVA结构简化层压工艺、提升层压良率、降低成本投入；下层改性胶膜添加改性中空结构纳米粒子，具有高透光特性，可用于双面电池组件；纳米粒子呈电中或电负性，PID测试时可以形成电场屏蔽，加强PERC电池背面氧化铝负电场的钝化作用；纳米粒子独特的中空结构可大量吸附电池或玻璃中的钠离子、钾离子等，进而显著提升组件抗PID作用。
Description
技术领域
本发明涉及光伏电池技术领域，具体涉及一种双面电池组件。
背景技术
近年来，光伏电站项目投资者越来越关注度电成本，而高功率的组件的应用可进一步降低度电成本，同时国家“领跑者计划”对高功率组件的刺激需求，光伏组件厂商不断通过技术升级提升组件输出功率。提升组件输出功率可通过提升电池效率、优化材料搭配、创新电路设计等方式实现，如半片、叠瓦、双面、多主栅技术等。双面组件由于背面发电特性，基于系统设计、地面反射率、安装因素等不同因素，发电量较常规单面组件增益可达5％-30％，可显著降低度电成本，目前市场上主流技术即双面p-PERC电池技术，双面组件可分为背面玻璃或透明背板两种结构，同时由于电池背面基于铝背场，在PID测试时易发生p型极化，且电池工艺、玻璃中的钠离子或钾离子等入侵电池的背面铝背场，并导致双面电池背面功率衰减过高，传统的透明高截止EVA胶膜搭配双面电池会发生较高的背面衰减；目前一般选择POE胶膜作为封装材料，但是一方面POE层压工艺复杂、耗时长，需要使用层压工装、封闭胶带，耗时费力，同时层压过程长，且易出现串偏移、气泡等问题；另一方面，POE的工艺稳定性较差，由于添加大量有机助剂，且与POE混合困难，导致批次间差异较大，使用存在一定风险。
如专利文献CN105885709A所公开一种超高截止EVA封装胶膜；其质量百分比含量如下：乙烯-醋酸乙烯共聚物树脂含量为94.8％～97.02％，稀土有机转光剂含量为0.1％～0.5％，抗氧剂含量为0.3％～3％，紫外线吸收剂含量为0.6％～0.9％，交联剂含量为0.45％～2％，硅烷偶联剂含量为0.18％～1.5％；该公开专利提供的制造方法制得的EVA胶膜的透明性和耐紫外老化性能得到了很大的提高，从而改善了胶膜的耐紫外老化性能，提高了太阳能电池组件的使用寿命，对组件的背材起到了很好的保护作用。
但现有的EVA胶膜不适配双面电池，组件PID测试后背面衰减超标问题无法解决。
如专利文献CN110527461A所公开一种高粘结强度的白色EVA胶膜，其质量份组成如下：EVA基料100份、钛白粉8-9份、增白剂0.1-0.3份、抗氧剂0.4-1.2份、光稳定剂0.3-0.8份、紫外吸收剂1-3份、热稳定剂0.4-1.6份、硅烷偶联剂0.2-1.2份、除酸剂0.1-0.5份、过氧化物类交联剂0.2-0.5份、增粘剂B-440.03-0.24份，所述EVA中VA的含量为28％；由于白色EVA胶膜在使用过程中会产生醋酸，醋酸会腐蚀电极，会造成电阻增大甚至是短路的情况发生，所以本发明中添加了除酸剂，用以去除醋酸，有效克服了由于醋酸的存在还产生的问题，提高了胶膜和组件的使用安全性。
但现有的白色EVA胶膜不适配双面电池组件，白膜主要是添加30％左右粒径约微米级别的二氧化钛实心粒子以增加正面光线反射，背面电池被白色胶膜遮住，背部光线同样无法穿透白色胶膜被背面电池吸收，无法发挥双面组件的发电特性。
如专利文献CN111518487A所公开一种光伏双玻组件封装专用抗PID的POE胶膜及其制备方法，POE胶膜包括如下重量份的原料：POE接枝改性树脂1-30份、第一POE树脂90-95份、紫外吸收剂0.01-0.5份、PID调节剂0.1-0.5份、光稳定剂0.01-0.5份、交联助剂0.5-5份、偶联剂0.1-0.5份、抗氧剂0.01-0.5份和交联剂0.5-5份。本发明的POE胶膜具有相比现行行业使用的胶膜有更好的抗PID能力和耐老化效果，可以保证PID在192h后的功率衰减控制在3.0％以内。
但现有POE胶膜层压工艺复杂、耗时长，需要使用层压工装、封闭胶带，耗时费力，同时层压过程长，且易出现串偏移、气泡等问题；另一方面，由于添加大量有机助剂，且与POE本体混合困难，导致批次间差异较大，使用存在一定风险。
发明内容
本发明的目的是为了解决以上现有技术的不足，提出了一种双面电池组件，所述的双面电池组件包括框架和自上而下依次叠层设于框架内的玻璃、上层胶膜、电池、下层胶膜、盖板。所述的下层胶膜的质量份组成如下：基体EVA树脂100份、改性纳米粒子0.1～30份、过氧化物交联剂0.01～2份、助交联剂0.1～5份、光稳定剂0.01～5份、抗氧剂0.05～3份。
进一步地，所述的改性纳米粒子为中空结构的纳米粒子。
中空结构的纳米粒子，保证了粒子的透光性，即使大量添加胶膜仍具有高透光，可用于双面电池组件。同时，中空结构的纳米粒子可大量吸附电池或玻璃中的钠离子、钾离子等，进而显著提升组件抗PID作用。
更进一步地，所述的改性纳米粒子通过硅烷偶联剂KH-550、KH-570、十二烷基磺酸钠、十二烷基硫酸钠、Tween80、曲拉通X-100中的一种或几种对中空结构的纳米粒子进行表面接枝改性。
更进一步地，所述中空结构的纳米粒子为无机非金属氧化物、无机非金属氮化物、金属氧化物、金属硫化物、金属氮化物中的一种或几种，具体可以为氧化锌、三氧化二铝、二氧化钛、二氧化硅、五氧化二钒、硫化镉、硫化铅、硫化锌、氮化硅、氮化镓中的一种或几种。
更进一步地，所述的中空结构的纳米粒子尺寸为10～200nm，壁厚为粒子的5～30％。
更进一步地，所述的过氧化物交联剂为过氧化二异丙苯、双叔丁基过氧化二异丙基苯、过氧化-2-乙基己基碳酸叔丁酯、2,5-二甲基-2,5-双(叔丁基过氧基)己烷、叔丁基过氧化碳酸-2-乙基己酯中的一种或几种。
更进一步地，所述的助交联剂为三烯丙基异氰脲酸酯、三羟甲基丙烷三丙烯酸酯、乙氧基化三羟甲基丙烷三丙烯酸酯、丙氧化三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、乙氧化季戊四醇四丙烯酸酯中的一种或几种。
更进一步地，所述的光稳定剂为3,5-二叔丁基-4-羟基-苯甲酸十六烷基酯、双(2,2,6,6-四甲基哌啶基)癸二酸酯、三(1,2,2,6,6-五甲基-4-哌啶基)亚磷酸酯、双(1-辛氧基-2,2,6,6-四甲基-4-哌啶基)癸二酸酯中的一种或几种。
更进一步地，所述的抗氧剂为四[β-(3，5-二叔丁基-4-羟基苯基)丙酸]季戊四醇酯、β-(3,5-二叔丁基-4-羟基苯基)丙酸正十八碳醇酯、N,N'-双-(3-(3,5-二叔丁基-4-羟基苯基)丙酰基)己二胺、2，6-二叔丁基对甲酚、4，4'-硫代双(3-甲基-6-叔丁基苯酚)、硫代二丙酸二月桂酸酯、三(2，4-二叔丁基苯基)亚磷酸酯中的一种或几种。
更进一步地，所述的盖板为透明背板，所述的透明背板的水汽透过率≤1g*m2/d。
有益效果：(1)本发明中，采用双层EVA结构简化层压工艺、提升层压良率、降低成本投入；
(2)下层改性胶膜添加改性中空结构纳米粒子，具有高透光特性，可用于双面电池组件；
(3)纳米粒子呈电中或电负性，PID测试时可以形成电场屏蔽，加强PERC电池背面氧化铝负电场的钝化作用；
(4)纳米粒子独特的中空结构可大量吸附电池或玻璃中的钠离子、钾离子等，进而显著提升组件抗PID作用。
附图说明
图1是一种双面电池组件的剖面示意图；
图2是双面电池组件的正视图；
图中：1、玻璃，2、上层胶膜，3、电池，4、下层胶膜，5、盖板。
具体实施方式
为了加深对本发明的理解，下面将结合实施例和附图对本发明作进一步详述，该实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
实施例1：如图1-2所示，一种双面电池组件，所述的双面电池组件包括框架和自上而下依次叠层设于框架内的玻璃1、上层胶膜2、电池3、下层胶膜4、盖板5。上层胶膜粘结于玻璃1与电池3之间，下层胶膜粘结于电池3与盖板5之间；所述的玻璃1为热强化玻璃盖板，所述的电池3为电池串，所述的上层胶膜2为常规高透EVA膜，所述的盖板为无机玻璃。
于本实施例中，所述的下层胶膜为改性EVA膜，所述的改性EVA膜质量份组成如下：基体EVA树脂100份、改性纳米粒子5.5份、过氧化物交联剂0.5份、助交联剂2份、光稳定剂0.5份、抗氧剂1份。
于本实施例中，所述的改性纳米粒子为中空结构的纳米粒子；
于本实施例中，所述的中空结构的纳米粒子为二氧化钛；
于本实施例中，所述的中空结构的纳米粒子平均粒径为30nm，壁厚为5nm。
所述的改性纳米粒子通过硅烷偶联剂KH-550对中空结构的纳米粒子进行表面接枝改性。
所述的过氧化物交联剂为过氧化二异丙苯、双叔丁基过氧化二异丙基苯、叔丁基过氧化碳酸-2-乙基己酯按照重量比为0.8：0.4：0.6组成的混合物。
所述的助交联剂为三烯丙基异氰脲酸酯、三羟甲基丙烷三丙烯酸酯、乙氧化季戊四醇四丙烯酸酯按照重量比0.8：0.6：0.2组成的混合物。
所述的光稳定剂为3,5-二叔丁基-4-羟基-苯甲酸十六烷基酯、双(2,2,6,6-四甲基哌啶基)癸二酸酯、双(1-辛氧基-2,2,6,6-四甲基-4-哌啶基)癸二酸酯按照重量比0.9：0.1：0.7组成的混合物。
所述的抗氧剂为四[β-(3，5-二叔丁基-4-羟基苯基)丙酸]季戊四醇酯、β-(3,5-二叔丁基-4-羟基苯基)丙酸正十八碳醇酯、2，6-二叔丁基对甲酚、4，4'-硫代双(3-甲基-6-叔丁基苯酚)按照重量比0.2：0.7：0.8：0.1组成的混合物。
实施例2：本实施例的双面电池组件和实施例1基本相同，不同的是改性纳米粒子为26.2份。
实施例3：本实施例的双面电池组件和实施例1基本相同，不同的是改性纳米粒子为45份，所述的中空结构的纳米粒子平均粒径为190nm，壁厚为20nm。
实施例4：本实施例的双面电池组件和实施例1基本相同，不同的是改性纳米粒子为26.2份，所述的中空结构的纳米粒子为五氧化二钒，平均粒径为90nm，壁厚为15nm。
实施例5：本实施例的双面电池组件和实施例1基本相同，不同的是改性纳米粒子为26.2份，所述的中空结构的纳米粒子为二氧化硅，平均粒径为90nm，壁厚为15nm。
实施例6：本实施例的双面电池组件和实施例1基本相同，不同的是改性纳米粒子为26.2份，所述的中空结构的纳米粒子为氮化硅，平均粒径为90nm，壁厚为15nm。
实施例7：本实施例的双面电池组件和实施例1基本相同，不同的是改性纳米粒子为26.2份，所述的中空结构的纳米粒子为硫化锌，平均粒径为90nm，壁厚为15nm。
对比例1：本实施例的双面电池组件和实施例1基本相同，不同的是所述的下层胶膜为常规高截止EVA膜。
对比例2：本实施例的双面电池组件和实施例1基本相同，不同的是所述的背板为透明TPT背板，所述的中空结构的纳米粒子为二氧化钛，平均粒径为30nm，壁厚为5nm。
对比例3：本实施例的双面电池组件和实施例1基本相同，不同的是所述的中空结构的纳米粒子为二氧化钛，改性纳米粒子为45份，所述的中空结构的纳米粒子为二氧化硅，平均粒径为190nm，壁厚为15nm。
对实施例1-7及对比例1-3的下层胶膜4的透光率、电阻率进行检查，透光率基于光谱380-1100nm,其结果如表1所示：添加中空结构的纳米粒子对透光率稍有降低，同时电阻率有一定提升，而添加实心二氧化钛粒子则透光率大幅下降。
| 序号 | 透光率 | 电阻率(Ω·cm) |
| 实施例1 | 92.5％ | 2.5*1015 |
| 实施例2 | 92.2％ | 3.1*1015 |
| 实施例3 | 90.8％ | 4.5*1015 |
| 实施例4 | 88.3％ | 3.2*1015 |
| 实施例5 | 90.3％ | 3.3*1015 |
| 实施例6 | 90.0％ | 3.4*1015 |
| 实施例7 | 90.2％ | 3.3*1015 |
| 对比例1 | 92.1％ | 2*1015 |
| 对比例2 | 92.2％ | 3.1*1015 |
| 对比例3 | 15.5％ | 5*1015 |
表1不同类型胶膜的性能对比
对实施例1-7及对比例1-2的组件进行双面率、抗PID性能进行测试，PID测试条件为：基于1500V双85条件下测试192h，结果如表2所示：普通高截止EVA抗PID性能很差，功率衰减显著高于5％衰减标准，而添加实心二氧化钛颗粒虽然有助于降低背面功率衰减，但是双面率大幅降低，对于电站端无实用价值，而添加本实施例中的中空结构的纳米粒子对于双面率略有降低，但是背面功率大幅衰减，因而更具实用性，且中空粒子的尺寸、壁厚及性质对双面率、功率衰减有一定影响，粒径增大、空腔增大，有利于吸附更多钠离子、钾离子等，壁厚减薄，有利于光线透过。
| 序号 | 双面率 | 背面PID衰减 |
| 实施例1 | 71.0％ | 4.5％ |
| 实施例2 | 70.1％ | 3.3％ |
| 实施例3 | 68.5％ | 2.5％ |
| 实施例4 | 66.1％ | 3.6％ |
| 实施例5 | 68.0％ | 4.1％ |
| 实施例6 | 68.5％ | 4.2％ |
| 实施例7 | 68.3％ | 3.5％ |
| 对比例1 | 70.2％ | 18.8％ |
| 对比例2 | 70.0％ | 3.8％ |
| 对比例3 | 14.5％ | 3.3％ |
表2不同组件的性能对比
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (5)
1.一种双面电池组件，其特征在于，所述的双面电池组件包括框架和自上而下依次叠层设于框架内的玻璃、上层胶膜、电池、下层胶膜、盖板，所述的下层胶膜的质量份组成如下：基体EVA树脂100份、改性纳米粒子0.1～30份、过氧化物交联剂0.01～2份、助交联剂0.1～5份、光稳定剂0.01～5份、抗氧剂0.05～3份；
所述的改性纳米粒子为中空结构的纳米粒子，所述的改性纳米粒子通过硅烷偶联剂KH-550、KH-570、十二烷基磺酸钠、十二烷基硫酸钠、Tween80、曲拉通X-100中的一种或几种对中空结构的纳米粒子进行表面接枝改性，所述中空结构的纳米粒子为无机非金属氧化物、无机非金属氮化物、金属氧化物、金属硫化物、金属氮化物中的一种或几种，所述的中空结构的纳米粒子尺寸为10～200nm，壁厚为粒子的5～30％；
所述的过氧化物交联剂为过氧化二异丙苯、双叔丁基过氧化二异丙基苯、过氧化-2-乙基己基碳酸叔丁酯、2,5-二甲基-2,5-双(叔丁基过氧基)己烷、叔丁基过氧化碳酸-2-乙基己酯中的一种或几种。
2.根据权利要求1所述的一种双面电池组件，其特征在于，所述的助交联剂为三烯丙基异氰脲酸酯、三羟甲基丙烷三丙烯酸酯、乙氧基化三羟甲基丙烷三丙烯酸酯、丙氧化三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、乙氧化季戊四醇四丙烯酸酯中的一种或几种。
3.根据权利要求1所述的一种双面电池组件，其特征在于，所述的光稳定剂为3,5-二叔丁基-4-羟基-苯甲酸十六烷基酯、双(2,2,6,6-四甲基哌啶基)癸二酸酯、三(1,2,2,6,6-五甲基-4-哌啶基)亚磷酸酯、双(1-辛氧基-2,2,6,6-四甲基-4-哌啶基)癸二酸酯中的一种或几种。
4.根据权利要求1所述的一种双面电池组件，其特征在于，所述的抗氧剂为四[β-(3，5-二叔丁基-4-羟基苯基)丙酸]季戊四醇酯、β-(3,5-二叔丁基-4-羟基苯基)丙酸正十八碳醇酯、N,N'-双-(3-(3,5-二叔丁基-4-羟基苯基)丙酰基)己二胺、2，6-二叔丁基对甲酚、4，4'-硫代双(3-甲基-6-叔丁基苯酚)、硫代二丙酸二月桂酸酯、三(2，4-二叔丁基苯基)亚磷酸酯中的一种或几种。
5.根据权利要求1所述的一种双面电池组件，其特征在于，所述的盖板为透明背板，所述的透明背板的水汽透过率≤1g*m2/d。
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