CN112946517A - Rapid high-power SiC MOSFET short-circuit fault detection circuit and detection method - Google Patents

Rapid high-power SiC MOSFET short-circuit fault detection circuit and detection method Download PDF

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CN112946517A
CN112946517A CN202110136021.6A CN202110136021A CN112946517A CN 112946517 A CN112946517 A CN 112946517A CN 202110136021 A CN202110136021 A CN 202110136021A CN 112946517 A CN112946517 A CN 112946517A
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circuit
detection unit
logic control
control unit
short
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CN112946517B (en
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黄樟坚
汪涛
张茂强
文继锋
李响
虞晓阳
骆仁松
刘建
周建华
陈舒
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NR Electric Co Ltd
Electric Power Research Institute of State Grid Jiangsu Electric Power Co Ltd
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NR Electric Co Ltd
Electric Power Research Institute of State Grid Jiangsu Electric Power Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention discloses a rapid high-power SiC MOSFET short-circuit fault detection circuit and a detection method. The detection method divides the detection of whether the SiC MOSFET has short-circuit fault by the logic control unit into 2 stages of opening transient state and opening steady state; in the on-transient state stage, the Miller platform is identified based on the gate voltage change rate detection unit and the gate charge detection unit, and the hard switch short-circuit fault HSF detection is realized by multiplexing the drain voltage detection unit; and in the stage of a steady state of opening, the detection of the short-circuit fault due to desaturation is realized based on the drain voltage detection unit. The present invention provides a dual Miller platform identification scheme with a wider QrefThe value range improves the reliability of HSF short-circuit fault detection and avoids avoiding time due to avoidancet blankSetting causes out-of-time desaturation detection actionsThe time problem is solved, and the rapidity of detecting the short-circuit fault is improved.

Description

Rapid high-power SiC MOSFET short-circuit fault detection circuit and detection method
Technical Field
The invention relates to a rapid high-power SiC MOSFET short-circuit fault detection circuit and a detection method, and belongs to the field of SiC MOSFET short-circuit fault detection.
Background
Compared with the traditional Si-based IGBT, the SiC MOSFET has the characteristics of wide forbidden band, high temperature resistance, low switching loss and the like, so that the SiC MOSFET has wide application prospect in high-power occasions with high frequency, high temperature and high power density, and the short-circuit protection technology for the high-power SiC MOSFET also becomes a research hotspot for the application of the SiC MOSFET.
The SiC MOSFET has larger short-circuit current and smaller chip size, so that the short-circuit endurance time is shorter, and higher requirements are put on the rapidity of short-circuit protection. At present, most short circuit detection methods of SiC MOSFETs use IGBTs, including desaturation detection and gate charge detection. It should be noted that the desaturation phenomenon is usually defined according to the transmission characteristic of the IGBT, and for the MOSFET, the saturation region and the linear region are just opposite to the IGBT, that is, the phenomenon appears as exiting the linear region of the current and entering the saturation region of the current in the MOSFET.
In order to avoid the false operation of desaturation detection in the normal turn-on transient process of the SiC MOSFET, the turn-on transient evasion time t must be setblank. If HSF short circuit fault occurs in the on transient state, the evading time tblankThe power device is damaged due to untimely desaturation detection action.
The conventional gate charge detection principle is shown in FIG. 1, and the gate voltage has V in the normal turn-on transient statemiller1To Vmiller2If a hard switch short circuit fault HSF occurs in the on transient state, the Miller platform is provided with a drain-source voltage VdsStill large, Miller capacitance CgdSubstantially constant, resulting in a gate voltage VgsThe Miller platform disappears, and a transient gate charge Q is switched ongSmaller than normal turn-on. Further, as shown in fig. 2, when the current flows through the body diode of the SiC MOSFET in the dead zone phase and the dead zone is ended, the SiC MOSFET is turned on at zero voltage ZVS in the diode on state, and V at this timedsAlmost constant, gate voltage VgsThere is also no miller platform; but ZVS turns on the drain voltage VdsNear zero voltage, and V at HSF faultdsInput capacitance C close to bus voltage, resulting in ZVS onissLarger, thus ZVS turn-on transient gate charge QgGreater than HSF failures. Conventional gate charge detection methods detect V by integrating the drive currentgsFrom opening t0From time to set value VrefGate charge Q ofgWhen Q isgLess than the charge reference value QrefAnd detecting the HSF short circuit fault of the switching-on transient state.
Conventional gate charge detection methods rely on detecting gate charge QgTo identify the Miller platform and further detect the HSF short circuit fault, however, the conventional gate charge detection method distinguishes between the ZVS on and the HSF short circuit fault by the reference charge QrefThe theoretical range of values is limited to Qg,HSFTo Qg,ZVSIn addition to QgThe integral link of the detection circuit is influenced by operational amplifier offset voltage, offset current, temperature drift and drive current oscillation to introduce integral error, narrower QrefEasy value range and integral errorLeading to protection malfunction; meanwhile, when the traditional gate charge detection method distinguishes ZVS (zero voltage switching) opening and HSF (high speed, high frequency) short-circuit faults, the input capacitor CissThe influence is large, when the SiC MOSFET grid source electrode is externally provided with a capacitor Cgs,extChange causes CissThe protection may also malfunction during the change.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the rapid high-power SiC MOSFET short-circuit fault detection circuit and the detection method overcome the defects of the existing desaturation detection and gate electrode charge detection.
The invention adopts the following technical scheme for solving the technical problems:
a rapid high-power SiC MOSFET short-circuit fault detection circuit comprises a gate voltage change rate detection unit, a gate charge detection unit, a drain voltage detection unit and a logic control unit; one end of the gate voltage change rate detection unit and one end of the gate electrode charge detection unit are respectively connected with a gate electrode of the SiC MOSFET, one end of the drain electrode voltage detection unit is connected with a drain electrode of the SiC MOSFET, and the other ends of the gate voltage change rate detection unit, the gate electrode charge detection unit and the drain electrode voltage detection unit are respectively connected with the logic control unit;
the logic control unit is used for receiving feedback signals of the gate voltage change rate detection unit, the gate charge detection unit and the drain voltage detection unit, judging whether the SiC MOSFET has short-circuit fault or not, and outputting a fault signal when the short-circuit fault is judged to occur; the logic control unit judges whether the SiC MOSFET has short-circuit fault and is divided into 2 stages of opening transient state and opening steady state: in the on-transient state stage, the Miller platform is identified based on the gate voltage change rate detection unit and the gate charge detection unit, and the hard switch short-circuit fault HSF detection is realized by multiplexing the drain voltage detection unit; and in the stage of a steady state of opening, the detection of the short-circuit fault due to desaturation is realized based on the drain voltage detection unit.
As a preferable scheme of the circuit of the invention, the gate voltage change rate detection unit comprises a first comparator and a second comparator, the non-inverting terminals of the first comparator and the second comparator are both connected with the gate of the SiC MOSFET,the inverting terminal of the first comparator is connected with a first reference set value VlowThe inverting terminal of the second comparator is connected with a second reference set value VhighThe output signal FB of the first comparatorVgs，lowAn output signal FB of the second comparatorVgs，highAre all fed back to the logic control unit.
As a preferable scheme of the circuit of the invention, the gate charge detection unit comprises a sampling resistor Rg,shuntA differential amplifying circuit, an integrating circuit, a third comparator, an integrating reset circuit, a gate pole of the SiC MOSFET via a sampling resistor Rg,shuntThe output end of the differential amplifying circuit is connected with the input end of the integrating circuit, the output end of the integrating circuit is connected with the in-phase end of a third comparator, and the inverting end of the third comparator is connected with a charge reference value QrefThe output signal FB of the third comparatorQgFeeding back to the logic control unit; the input end of the integral reset circuit is connected with the logic control unit, and the output end of the integral reset circuit is connected with the integral circuit.
As a preferred embodiment of the circuit of the present invention, the drain voltage detection unit includes a rc voltage divider, a clamp, a fourth comparator, and a reset circuit, the rc voltage divider is connected to the non-inverting terminal of the fourth comparator through the clamp, and the inverting terminal of the fourth comparator is connected to the comparator reference value VdesatThe output signal FB of the fourth comparatorVdsThe feedback is sent to the logic control unit, the input end of the reset circuit is connected with the logic control unit, and the output end of the reset circuit is connected with the in-phase end of the fourth comparator.
A fast high-power SiC MOSFET short-circuit fault detection method is realized based on the fast high-power SiC MOSFET short-circuit fault detection circuit, and the logic control unit detects whether the SiC MOSFET short-circuit fault occurs and is divided into 2 stages of opening transient state and opening steady state;
in the transient state stage of switching on, the logic control unit judges whether the SiC MOSFET has short circuit fault specifically as follows:
(1) the logic control unit receives the change rate dV of the gate voltagegsThe feedback signal of the/dt detection unit is fed back, and V is calculatedgsFrom the set value VlowUp to VhighTime interval Δ t of;
(2) gate charge QgReal-time detection V of detection unitgsFrom opening t0From moment to avoidance time tblankGate charge Q ofgLogic control unit receiving gate charge QgThe detection unit feeds back a signal;
(3) if Δ t is smaller than the time reference value Δ tref(ii) a And V isgsTo VhighQ of (A) isgLess than the charge reference value Qg,refDuration greater than tQg,filter(ii) a During the transient state period of the startup, the logic control unit does not identify the Miller platform;
(4) drain voltage VdsThe detection unit detects the drain voltage in real time, if t is turned on0From time on, VdsGreater than the drain-source voltage reference value Vds,refAnd a duration greater than tZVS，filterIf the voltage is zero, the logic control unit judges that the switching-on transient state is the switching-on of the non-zero voltage ZVS;
(5) at avoidance time tblankIf the logic control unit does not identify the Miller platform and judges that the turn-on transient state is non-ZVS turn-on, the logic control unit judges that the SiC MOSFET has short-circuit fault in the turn-on transient state stage and outputs a fault feedback signal;
in the stage of opening steady state, the logic control unit receives the drain voltage VdsThe detection unit feeds back signals to realize the desaturation detection of short circuit faults.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
the invention detects the change rate dV of the gate voltage at the stage of the opening transient state of the SiC MOSFETgsDt and gate charge QgThe dual test mode of (2) identifies the miller platform; simultaneous multiplexing of drain voltage V for desaturation detectiondsDetecting cells, not gate charge QgTo distinguish ZVS open from HSF short circuit fault, reference charge QrefThe theoretical value range is expanded to Qg,HSFAnd Qg,NORAnd reduces the external grid source capacitance Cgs,extInfluence. Dual Miller platformIdentification manner, plus wider QrefThe value range improves the reliability of HSF short-circuit fault detection. In addition, the invention adopts different short-circuit fault detection modes in the switching-on transient state and the switching-on steady state, thereby avoiding the avoiding time tblankThe inner back saturation detection action is not timely. Therefore, the rapidity of detecting a short-circuit fault is improved during the entire turn-on period of the SiC MOSFET.
Drawings
Fig. 1 is a schematic diagram of a conventional gate charge detection principle.
Fig. 2 is a dead band phase body diode freewheeling schematic.
Fig. 3 is a block diagram of a fast high-power SiC MOSFET short-circuit fault detection circuit provided by the present invention.
Fig. 4 is a schematic circuit diagram of a gate voltage change rate detection unit according to the present invention.
FIG. 5 shows a gate voltage change rate dV according to the present inventiongsSchematic diagram of the/dt detection.
Fig. 6 is a schematic circuit diagram of a gate charge detection unit according to the present invention.
FIG. 7 shows a gate charge Q according to the present inventiongAnd (5) detecting a schematic diagram.
Fig. 8 is a schematic circuit diagram of a drain voltage detection unit according to the present invention.
FIG. 9 shows a drain voltage V according to the present inventiondsAnd (5) detecting a schematic diagram.
Fig. 10 is a flowchart of a fast short-circuit fault detection method for a high-power SiC MOSFET provided by the present invention.
001 is a gate voltage change rate detection unit; 002 is a gate charge detection unit; 003 is the detection unit of the drain voltage; 004 is a logic control unit.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
Fig. 3 is a schematic block diagram of a fast high-power SiC MOSFET short-circuit fault detection circuit provided by the present invention, which includes a gate voltage change rate detection unit 001, a gate charge detection unit 002, a drain voltage detection unit 003, and a logic control unit 004. The logic control unit receives the PWM driving signal and outputs the PWM driving signal to the gate driver to realize the driving control of the SiC MOSFET; simultaneous logic control unit receiving dVgsDt detection unit, QgDetection unit, VdsThe detection unit feeds back a signal, judges whether the SiC MOSFET has a short-circuit fault or not and outputs a fault signal; in addition, the logic control unit also needs to send a control signal to QgDetection unit and VdsA detection unit for resetting QgIntegration circuit and V of detection unitdsAnd the resistance-capacitance voltage division circuit of the detection unit.
The logic control unit receives the change rate dV of the gate voltagegsFeedback signal of the/dt detection unit and calculation of gate voltage VgsFrom the set value VlowUp to VhighIs used to characterize the rate of change dV of the gate voltagegs/dt。
Gate charge QgThe detection unit is used for detecting the gate voltage V in real timegsFrom opening t0From moment to avoidance time tblankGate charge Q ofg。
The logic control unit is based on the change rate dV of the gate voltagegsDt detection unit and gate charge QgThe detection unit identifies the miller platform.
Drain voltage VdsThe detection unit is used for identifying zero voltage ZVS opening in the opening transient state; and the device is used for detecting short-circuit faults after being desaturated in the opening steady state.
FIG. 4 shows a gate voltage change rate dV according to the present inventiongsThe circuit structure of the/dt detection unit comprises a first comparator CMP1 and a second comparator CMP2, wherein the in-phase ends of the first comparator CMP1 and the second comparator CMP2 are connected with the gate of the SiC MOSFET, and the out-phase ends are respectively connected with a reference set value Vlow、VhighOutputs a signal FBVgs，low、FBVgs，highAnd feeding back to the logic control unit.
FIG. 5 is a graph showing the rate of change dV of the gate voltagegsSchematic diagram of the/dt detection. Because the interval of the Miller platform of the SiC MOSFET is changed under the working conditions of different working junction temperatures, load currents and the like, the condition that the Miller platform is generated at V under different normal working conditions is metlowAnd VhighIn between, i.e. Vlow<Vmiller,min，Vhigh>Vmiller,max. When the gate voltage is greater than Vlow，FBVgs,lowAt high level, when the gate turn-on voltage is greater than Vhigh，FBVgs,highIs high. In order to eliminate the influence of high-frequency oscillation of the gate voltage, the logic control unit receives a feedback signal FBVgs,low、FBVgs,highMaking the pulse width less than tVgs,filterObtaining FBfilter,low、FBfilter,high. Logic control unit through calculating FBfilter,lowRising edge to FBfilter,highRising edge time, get VgsFrom VlowUp to VhighAnd by means of Δ t, and characterizing VgsFrom VlowUp to VhighdV ofgs/dt。
FIG. 6 shows a gate charge Q according to the present inventiongThe detection unit comprises a sampling resistor Rg,shuntA differential amplifier circuit, an integrating reset circuit, and a third comparator CMP 3. The gate pole current signal passes through a sampling resistor Rg,shuntCollecting, amplifying by differential amplifier circuit, amplifying output signal, and obtaining gate charge signal Q by integrator circuitgQ obtained by integrationgAnd a charge reference value QrefComparing the result FBQgFeeding back to the logic control unit; meanwhile, the logic control unit issues a control signal RSTIntTo the integration reset circuit to enable or reset the integration circuit.
FIG. 7 shows gate charge QgAnd (5) detecting a schematic diagram. Logic control unit at t0After receiving the PWM opening signal at any moment, sending a low-level RSTIntSignal to integral reset circuit enabling gate charge QgAn integration circuit of the detection unit; logic unit from t0From time on, the avoidance time t passesblankThen, high-level RST is issuedIntThe signal is sent to an integration reset circuit, which resets the integration circuit. Gate charge QgDetecting unit for detecting gate pole voltage V in real timegsFrom opening t0From moment to avoidance time tblankGate charge Q ofgWhen the logic control unit detects FBfilter,highRising edge of signal, if gate charge Q is received at this timegDetection unit feedback signal FBQgIs at low level, and the duration of the low level is greater than the set value tQg,filter(ii) a The simultaneous logic control unit calculates the obtained VgsFrom VlowUp to VhighIs smaller than a reference value atrefThe logic control unit determines that the miller platform is not identified during the turn-on transient.
FIG. 8 shows a drain voltage V according to the present inventiondsThe detection unit circuit structure schematic diagram comprises a resistance-capacitance voltage division circuit, a clamping circuit, a fourth comparator CMP4 and a reset circuit; drain voltage VdsObtaining V after voltage division by a resistance-capacitance voltage division circuitdivAnd accessing the same phase terminal of CMP 4; in order to prevent the input voltage of the comparator from exceeding the allowable range, a clamping circuit is used for clamping; when the logic control unit receives the PWM turn-off signal, the logic control unit issues a high-level RSTVdsThe control signal drives the MOS to be turned on to convert VdivA pull-down to ground reset resistor-capacitor voltage divider circuit, a comparator for feeding back low level FBVdsSignals to the logic control unit; when the logic control unit receives the PWM opening signal, the logic control unit issues a low level RSTVdsThe control signal drives the MOS to turn off if the drain voltage V is presentdsGreater than the drain quiescent reference voltage Vds,refThen V isdivGreater than the comparator reference value VdesatComparator feedback high level FBVdsA signal.
FIG. 9 shows the drain voltage VdsAnd (5) detecting a schematic diagram. When the SiC MOSFET is at t0When the circuit is in an off state before the moment, the logic control unit issues a high-level RSTVdsControl signal driving MOS to be switched onWill VdivPull-down to ground reset resistor-capacitor voltage divider circuit, drain voltage VdsDetection unit feedback low level FBVdsThe signal is sent to the logic control unit. At t0At the moment, the logic control unit receives the PWM opening signal and issues a low-level RSTVdsThe control signal drives the MOS off. During normal turn-on, at the drain voltage VdsDown to drain quiescent reference voltage Vds,refBefore, the drain voltage VdsThe detection unit feeds back a high level; and at the moment of ZVS turn-on, the drain voltage VdsLess than Vds,refDrain voltage VdsThe detection unit feeds back a low level; when HSF short circuit fault occurs at the moment of opening, drain voltage VdsAfter a short fall, the voltage is restored to the DC bus voltage and the drain voltage VdsGreater than Vds,refDrain voltage VdsThe detection unit feeds back a high level. Therefore, if t is switched on0Time of day, FBVdsFor high level duration greater than tZVS,filterThen the logic control unit judges that the turn-on transient non-ZVS is turned on.
Fig. 10 is a flowchart of a method for rapidly detecting a short-circuit fault of a high-power SiC MOSFET according to an embodiment of the present invention. t is t0At the moment, the logic control unit receives a PWM (pulse width modulation) opening signal to enable the gate pole charge QgDetecting the cell integrator circuit and blocking the drain voltage VdsThe detection unit reset circuit starts a short-circuit fault detection function. The logic control unit provided by the invention detects whether the short-circuit fault of the SiC MOSFET occurs and is divided into 2 stages of opening steady state and opening transient state.
In the transient state switching-on stage, the logic control unit judges whether the SiC MOSFET has a short-circuit fault in the following specific process:
(1) when the gate voltage Vgs>Vlow，dVgsFeedback signal FB of/dt detection unitVgs,lowJump from low to high when Vgs>Vhigh，dVgsFeedback signal FB of/dt detection unitVgs,highJump from low to high; the logic control unit receives the feedback signal FBVgs,low、FBVgs,highMaking the pulse width less than tVgs,filterAnd calculating VgsFrom the set value VlowUp to VhighTime interval Δ t of;
(2) logic control unit receiving gate charge QgDetection unit feedback signal FBQgIf V isgsFrom opening t0Time to VhighGate charge Q ofgLess than the charge reference value QrefThen FBQgIs low level;
(3) if delta t is less than the set value delta trefAnd FBQgThe duration of low level is greater than a first time set value tQg,filterIf the Miller platform is not identified in the transient state stage, the logic control unit judges that the Miller platform is not identified in the transient state stage;
(4) the logic control unit receives the drain voltage VdsFeedback signal FB of detection unitVdsWhen V isds>Vds,refThen FBVdsAt high level, if t is turned on0Time of day, FBVdsThe high level duration is longer than the second time set value tZVS,filterIf the switching-on transient non-ZVS is judged by the logic control unit;
(5) at the turn-on transient avoidance time tblankIf the logic control unit does not identify the Miller platform and judges that the turn-on transient state is non-ZVS turn-on, the logic control unit judges that the SiC MOSFET has HSF short circuit fault in the turn-on transient state stage and outputs a fault feedback signal;
(6) at tblankAfter the time is over, the logic control unit resets the gate charge QgA unit integration circuit is detected.
At the stage of opening steady state, the logic control unit receives the drain voltage VdsDetection unit feedback signal FBVdsAnd the method realizes the saturation removal detection of the short-circuit fault, and comprises the following specific processes:
(1) the logic control unit receives the PWM opening signal and avoids the time t after the opening transient stateblankThen, if the drain voltage VdsThe detection unit detects the drain voltage VdsGreater than a reference value Vds,refThen FBVdsIs high level, when the duration of the high level exceeds a third timeSet value tdesat,filterIf so, the logic control unit judges that the SiC MOSFET has a short-circuit fault in the steady-state switching-on stage and outputs a fault feedback signal;
(2) the logic control unit receives the PWM turn-off signal and issues a high-level RSTVdsControl signal enables drain voltage VdsA detection unit reset circuit.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.

Claims (5)

1. A rapid high-power SiC MOSFET short-circuit fault detection circuit is characterized by comprising a gate voltage change rate detection unit, a gate charge detection unit, a drain voltage detection unit and a logic control unit; one end of the gate voltage change rate detection unit and one end of the gate electrode charge detection unit are respectively connected with a gate electrode of the SiC MOSFET, one end of the drain electrode voltage detection unit is connected with a drain electrode of the SiC MOSFET, and the other ends of the gate voltage change rate detection unit, the gate electrode charge detection unit and the drain electrode voltage detection unit are respectively connected with the logic control unit;
the logic control unit is used for receiving feedback signals of the gate voltage change rate detection unit, the gate charge detection unit and the drain voltage detection unit, judging whether the SiC MOSFET has short-circuit fault or not, and outputting a fault signal when the short-circuit fault is judged to occur; the logic control unit judges whether the SiC MOSFET has short-circuit fault and is divided into 2 stages of opening transient state and opening steady state: in the on-transient state stage, the Miller platform is identified based on the gate voltage change rate detection unit and the gate charge detection unit, and the hard switch short-circuit fault HSF detection is realized by multiplexing the drain voltage detection unit; and in the stage of a steady state of opening, the detection of the short-circuit fault due to desaturation is realized based on the drain voltage detection unit.
2. The fast high power SiC MOSFET short circuit fault detection circuit of claim 1 in which the gate is connected to a gate terminalThe voltage change rate detection unit comprises a first comparator and a second comparator, the in-phase ends of the first comparator and the second comparator are both connected with a gate pole of the SiC MOSFET, and the reverse-phase end of the first comparator is connected with a first reference set value VlowThe inverting terminal of the second comparator is connected with a second reference set value VhighThe output signal FB of the first comparatorVgs，lowAn output signal FB of the second comparatorVgs，highAre all fed back to the logic control unit.
3. The fast high-power SiC MOSFET short-circuit fault detection circuit as claimed in claim 1, wherein the gate charge detection unit comprises a sampling resistor Rg,shuntA differential amplifying circuit, an integrating circuit, a third comparator, an integrating reset circuit, a gate pole of the SiC MOSFET via a sampling resistor Rg,shuntThe output end of the differential amplifying circuit is connected with the input end of the integrating circuit, the output end of the integrating circuit is connected with the in-phase end of a third comparator, and the inverting end of the third comparator is connected with a charge reference value QrefThe output signal FB of the third comparatorQgFeeding back to the logic control unit; the input end of the integral reset circuit is connected with the logic control unit, and the output end of the integral reset circuit is connected with the integral circuit.
4. The fast short-circuit fault detection circuit for the high-power SiC MOSFET as claimed in claim 1, wherein the drain voltage detection unit comprises a RC voltage divider circuit, a clamp circuit, a fourth comparator and a reset circuit, the RC voltage divider circuit is connected with the in-phase end of the fourth comparator through the clamp circuit, and the inverting end of the fourth comparator is connected with a comparator reference value VdesatThe output signal FB of the fourth comparatorVdsThe feedback is sent to the logic control unit, the input end of the reset circuit is connected with the logic control unit, and the output end of the reset circuit is connected with the in-phase end of the fourth comparator.
5. A rapid high-power SiC MOSFET short-circuit fault detection method is realized based on the rapid high-power SiC MOSFET short-circuit fault detection circuit of claim 1, and is characterized in that a logic control unit detects whether the SiC MOSFET short-circuit fault occurs and is divided into 2 stages of an on-transient state and an on-steady state;
in the transient state stage of switching on, the logic control unit judges whether the SiC MOSFET has short circuit fault specifically as follows:
(1) the logic control unit receives a feedback signal FB of the gate voltage change rate detection unitVgs,lowAnd FBVgs,highAnd calculating the gate voltage V after filteringgsFrom a first reference set value VlowRises to a second reference set value VhighTime interval Δ t of;
(2) real-time detection V of gate charge detection unitgsFrom opening t0From moment to avoidance time tblankInternal gate charge QgThe logic control unit receives the feedback signal FB of the gate charge detection unitQgIf gate charge QgLess than the charge reference value QrefThen FBQgIs low level;
(3) if Δ t is smaller than the time reference value Δ trefAnd V isgsTo VhighHour FBQgIs at low level and the duration of the low level is greater than a first time setting value tQg,filter(ii) a The logic control unit does not recognize the Miller platform in the transient state starting stage;
(4) the logic control unit receives a feedback signal FB of the drain voltage detection unitVdsWhen the drain voltage V isdsGreater than the drain-source voltage reference value Vds,refThen FBVdsAt high level, if t is turned on0Time of day, FBVdsThe high level duration is longer than the second time set value tZVS,filterIf the switching-on transient state is not ZVS switching-on, the logic control unit judges that the switching-on transient state is not ZVS switching-on;
(5) avoidance time t in the on transient stateblankIf the logic control unit does not identify the Miller platform and judges that the turn-on transient state is non-ZVS turn-on, the logic control unit judges that the SiC MOSFET has short-circuit fault in the turn-on transient state stage and outputs a fault feedback signal;
in the stage of switching on the steady state, the logic control unit judges whether the SiC MOSFET has short circuit fault or not by the specific process as follows:
passing through turn-on transient avoidance time tblankThen, if the drain voltage detecting unit detects the drain voltage VdsGreater than the drain-source voltage reference value Vds,refThe logic control unit receives the feedback signal FB of the drain voltage detection unitVdsIs high level, when the duration of the high level exceeds the third time set value tdesat,filterAnd the logic control unit judges that the SiC MOSFET has short-circuit fault in the switching-on steady-state stage and outputs a fault feedback signal.
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