CN112929016A - Photoelectric logic switch with vertical structure - Google Patents
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- CN112929016A CN112929016A CN202110116864.XA CN202110116864A CN112929016A CN 112929016 A CN112929016 A CN 112929016A CN 202110116864 A CN202110116864 A CN 202110116864A CN 112929016 A CN112929016 A CN 112929016A
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 44
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- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 8
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
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Abstract
The invention provides a photoelectric logic switch with a vertical structure, and belongs to the technical field of semiconductor photoelectric integration. The opto-electronic logic switch comprises: the optical detection unit is arranged on the top layer and used for converting the detected optical signal into a current signal; the input end of the impedance unit is electrically connected with the output end of the light detection unit; the impedance unit is used for converting the current signal generated by the optical detection unit into a voltage signal and amplifying the voltage signal to the detection range of the logic circuit; the input end of the logic unit is electrically connected with the output end of the impedance unit; the logic unit is used for reversely converting the low-level voltage signal output by the impedance unit into a high-level voltage signal and outputting the high-level voltage signal. The invention can realize photoelectric integration and logic operation, simplify the preparation process and reduce the volume of the device.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric integration, in particular to a photoelectric logic switch with a vertical structure.
Background
Since the 60 s of the last century, the microelectronics field has gained a rapid and dramatic development in integrated circuit technology. For thirty years, the feature size of the CMOS process is continuously reduced, the speed of the device is continuously increased, the density of the device integrated on a single chip is continuously increased, and the line width of the process for manufacturing the chip is brought into deep submicron, but the parasitic effect of the interconnection lines such as parasitic capacitance and signal crosstalk on the chip is more and more significant, so that the so-called "electronic bottleneck" of the integrated circuit development is formed. Because the photon transmission speed is far higher than the electronic speed, the multiplexing capability and the anti-interference capability of optical signals are stronger than those of electric signals, and by utilizing the inherent advantages of the optical interconnection, if the electric signals obtained by circuit calculation are converted into the optical signals for transmission, various problems of the electric interconnection are expected to be solved.
Since the concept of integrated optics has been proposed, integrated optics has generated a great social impact from the theoretical development to the technical development. Semiconductor optoelectronic integration is considered to be an effective way to realize high-performance and low-cost optoelectronic devices due to its advantages of high integration level, large information amount, high speed and the like. Silicon material has changed the world through microelectronics technology and it will also become a key material for photonic technology. Silicon-based photonics has achieved remarkable success in recent years, making monolithic integration of silicon-based photonic devices and microelectronic circuits on the same silicon substrate possible due to the compatibility of silicon-based photonics technology with CMOS processes.
There are many problems with the current interconnection technology for photodetectors and logic circuits. Firstly, the problem that a signal is smaller than a detection level exists when the transmission from an optical signal to an electric signal is realized, and the photocurrent can be used as an input signal to be transmitted into a logic circuit only when the conversion from the current to the voltage is realized; secondly, the optical signal usually takes a certain wave band as a main body, and one device can only sense and transmit one wave band, so that the reduction of the volume of the device is greatly limited, and the application is limited.
Disclosure of Invention
The embodiment of the invention provides a photoelectric logic switch with a vertical structure, which is used for solving the problems of photoelectric detection and logic circuit interconnection in the prior art. The technical scheme provided by the invention is as follows:
an embodiment of the present invention provides a vertical-structured optoelectronic logic switch, including: the device comprises a light detection unit, an impedance unit and a logic unit;
the optical detection unit is arranged on the top layer and used for converting the detected optical signal into a current signal;
the impedance unit is arranged at the lower layer of the optical detection unit, and the input end of the impedance unit is electrically connected with the output end of the optical detection unit; the impedance unit is used for converting the current signal generated by the optical detection unit into a voltage signal and amplifying the voltage signal to the detection range of the logic circuit;
the logic unit is arranged on the bottom layer, and the input end of the logic unit is electrically connected with the output end of the impedance unit; the logic unit is used for reversely converting the low-level voltage signal output by the impedance unit into a high-level voltage signal and outputting the high-level voltage signal.
Optionally, the optoelectronic logic switch comprises: at least one light detection unit, and an equal number of impedance units as the light detection units.
Optionally, the logic unit includes:
a substrate disposed on the bottom layer;
the first two-dimensional molybdenum disulfide layer, the first electrode and the third electrode are integrated on the substrate, and the first electrode and the third electrode are respectively arranged at two ends of the first two-dimensional molybdenum disulfide layer;
the second electrode is arranged on the top of the first two-dimensional molybdenum disulfide layer and is positioned between the first electrode and the third electrode;
the first two-dimensional boron nitride layer and the fourth electrode are arranged between the second electrode and the third electrode; the first two-dimensional boron nitride layer is arranged on the first two-dimensional molybdenum disulfide layer, and the fourth electrode is arranged on the first two-dimensional boron nitride layer.
Optionally, the optoelectronic logic switch comprises a first impedance unit;
the first impedance unit includes:
a second two-dimensional molybdenum disulfide layer integrated on the third and fourth electrodes, serving as a resistance of the first impedance unit;
the fifth electrode and the sixth electrode are arranged at two ends of the second two-dimensional molybdenum disulfide layer; the fifth electrode is electrically connected with the third electrode, and the sixth electrode is electrically connected with the fourth electrode.
Optionally, the optoelectronic logic switch comprises a first light detection unit;
the first light detection unit includes:
a seventh electrode electrically connected to the fifth electrode, serving as a source of the first photodetecting unit equivalent phototransistor;
an eighth electrode electrically connected to the sixth electrode and serving as a drain of the first photo-detecting unit equivalent phototransistor;
the first photosensitive two-dimensional material layer is integrated on the fifth electrode and the sixth electrode, is communicated with the seventh electrode and the eighth electrode and is used as a channel material of the equivalent phototransistor of the first light detection unit; the first photosensitive two-dimensional material is a two-dimensional material sensitive to a first preset waveband optical signal required to be detected by the first optical detection unit.
Optionally, the logic unit further includes:
a second two-dimensional boron nitride layer and a ninth electrode disposed between the first electrode and the second electrode; the second two-dimensional boron nitride layer is arranged on the first two-dimensional molybdenum disulfide layer, and the ninth electrode is arranged on the second two-dimensional boron nitride layer.
Optionally, the optoelectronic logic switch further comprises a second impedance unit;
the second impedance unit includes:
a third two-dimensional molybdenum disulfide layer integrated on the first and ninth electrodes, serving as a resistance of the second impedance unit;
the tenth electrode and the eleventh electrode are arranged at two ends of the third two-dimensional molybdenum disulfide layer; the tenth electrode is electrically connected with the first electrode, and the eleventh electrode is electrically connected with the ninth electrode.
Optionally, the optoelectronic logic switch further comprises a second light detection unit;
the second light detection unit includes:
a twelfth electrode electrically connected to the tenth electrode, serving as a source of the second photo-detection unit equivalent phototransistor;
a thirteenth electrode electrically connected to the eleventh electrode and serving as a drain of the second photo-detecting unit equivalent phototransistor;
a second photosensitive two-dimensional material layer integrated on the tenth electrode and the eleventh electrode, the second photosensitive two-dimensional material layer communicating with the twelfth electrode and the thirteenth electrode and serving as a channel material of the equivalent phototransistor of the second light detection unit; the second photosensitive two-dimensional material is a two-dimensional material sensitive to a second preset waveband optical signal required to be detected by the second optical detection unit.
Optionally, the first photosensitive two-dimensional material and the second photosensitive two-dimensional material are two-dimensional molybdenum ditelluride and two-dimensional molybdenum disulfide, respectively.
Optionally, the distance between the seventh electrode and the eighth electrode is adjustable, and/or
The distance between the twelfth electrode and the thirteenth electrode is adjustable.
The technical scheme provided by the embodiment of the invention has the beneficial effects that at least:
in the embodiment of the invention, the conversion from an optical signal to an electric signal is realized through the optical detection unit, and the transmission of the electric signal, the conversion from a current signal to a voltage signal and the amplification of the electric signal are realized through the impedance unit; the operation of the electric signal is realized through the logic unit, and the reverse output from low level to high level is realized. The logic switch provided by the invention has the advantages that the vertical structure is formed by the optical detection unit, the impedance unit and the logic unit, the photoelectric integration and the logic operation of the preset optical band are realized by the integration of the three units in the vertical direction, the problems of the photoelectric detection and the logic circuit interconnection in the prior art can be solved, the photoelectric integration and the logic operation are realized, the preparation process is simplified, the size of the device is reduced, and further, the vertical structure of a plurality of impedance units and the optical detection unit can be superposed on the logic unit by adopting the same design principle, so that the photoelectric integration and the logic operation of a plurality of different bands can be realized.
Drawings
Fig. 1 is a schematic structural diagram of an opto-electronic logic switch with a vertical structure according to the present invention;
FIG. 2 is a schematic structural diagram of a vertical-structure optoelectronic logic switch according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a second embodiment of a vertical-structure optoelectronic logic switch according to the present invention;
fig. 4 is a top view structural diagram of a third embodiment of the vertical-structured optoelectronic logic switch according to the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic structural diagram of an opto-electronic logic switch with a vertical structure according to the present invention, and as shown in fig. 1, the opto-electronic logic switch with a handling structure includes: light detection unit 100, impedance unit 200 and logic unit 300.
A light detection unit 100 disposed on the top layer for converting the detected light signal into a current signal;
an impedance unit 200 disposed at a middle layer, i.e., a layer below the light detection unit, and having an input end electrically connected to an output end of the light detection unit 100; the impedance unit 200 is used for converting the current signal generated by the 100 optical detection unit into a voltage signal and amplifying the voltage signal to the detection range of the logic circuit 300;
a logic unit 300 disposed on the bottom layer, wherein an input end of the logic unit is electrically connected to an output end of the impedance unit 200; the logic unit 300 is used to realize the inverse conversion of the low-level voltage signal output by the impedance unit 200 into the high-level voltage signal for output.
In an alternative embodiment, the present invention provides a vertical structure opto-logic switch comprising: at least one light detection unit, and an equal number of impedance units as the light detection units. Namely: the logic unit may have a vertical structure with multiple groups of impedance units and optical detection units, each group of optical detection units is configured to detect an optical signal of a preset waveband, convert the optical signal into a voltage signal through the impedance units, and output the voltage signal to the logic unit 300, and the logic unit 300 reversely converts the low-level voltage signal output by each group of impedance units into a high-level voltage signal to output, thereby implementing photoelectric integration and logic operation on multiple different wavebands.
In the embodiment of the invention, the conversion from an optical signal to an electric signal is realized through the optical detection unit, and the transmission of the electric signal, the conversion from a current signal to a voltage signal and the amplification of the electric signal are realized through the impedance unit; the operation of the electric signal is realized through the logic unit, and the reverse output from low level to high level is realized. According to the logic switch provided by the invention, the vertical structure is formed by the optical detection unit, the impedance unit and the logic unit, and the photoelectric integration and the logic operation of the preset optical band are realized by the integration of the three units in the vertical direction, so that the problems of photoelectric detection and logic circuit interconnection in the prior art can be solved, the photoelectric integration and the logic operation are realized, the preparation process is simplified, and the size of the device is reduced.
The following takes the detection of a single-band optical signal and the detection of two-band optical signals as examples, and specifically describes the vertical-structure opto-electronic logic switch provided by the present invention.
Example one
The embodiment provides an optoelectronic logic switch for realizing optoelectronic integration and logic operation of a waveband. Fig. 2 is a schematic structural diagram of a first embodiment of a vertical-structure opto-electronic logic switch provided in the present invention, and as shown in fig. 2, the opto-electronic logic switch provided in this embodiment includes a first optical detection unit 101, a first impedance unit 201, and a logic unit 300. The logic unit 300 may include: the electrode structure comprises a substrate 1 arranged at the bottom layer, a first two-dimensional molybdenum disulfide layer 2, a first electrode 3 and a third electrode 5, wherein the first two-dimensional molybdenum disulfide layer 2, the first electrode 3 and the third electrode 5 are integrated on the substrate 1; the logic unit 300 further comprises a second electrode 4 arranged on top of the first two-dimensional molybdenum disulfide layer 2 and between the first electrode 3 and the third electrode 5, and a first two-dimensional boron nitride layer 6 and a fourth electrode 9 arranged between the second electrode 4 and the third electrode 5; the first two-dimensional boron nitride layer 6 is disposed on the first two-dimensional molybdenum disulfide layer 2, and the fourth electrode 9 is disposed on the first two-dimensional boron nitride layer 6.
In fig. 2, the first two-dimensional molybdenum disulfide layer 2 is used as a channel of a logic transistor, in this embodiment, for the first optical detection unit 101 and the first impedance unit 201, the first electrode 3 is used as a first bias terminal of the logic unit 300, the second electrode 4 is used as a signal output terminal of the logic unit 300, and the third electrode 5 is used as a first ground terminal of the logic unit; the first two-dimensional boron nitride layer 6 and the fourth electrode 9 are used as a first signal input terminal of the logic unit 300, the first two-dimensional boron nitride layer 6 plays a role of a gate dielectric layer, and the fourth electrode 9 is added with two-dimensional boron nitride to form a bottom electrode of a field effect transistor field, so that the first two-dimensional boron nitride layer 6 and the fourth electrode 9 are used as gates of a logic circuit.
Preferably, the thickness of the first two-dimensional molybdenum disulfide layer 2 is 5nm-20nm, and the length is 25 μm-30 μm; the first two-dimensional boron nitride layer 6 has a thickness of 10nm to 100nm and a length of 20 μm to 30 μm. The thicknesses of the first electrode 3, the second electrode 4, the third electrode 5 and the fourth electrode 9 are all 50-80 nm.
Further optionally, as shown in fig. 2, the first impedance unit 201 included in the optoelectronic logic switch may include: a second two-dimensional molybdenum disulfide layer 7, a fifth electrode 10 and a sixth electrode 11; wherein a second two-dimensional molybdenum disulfide layer 7 is integrated on the third electrode 5 and the fourth electrode 9, serving as a resistance of the first impedance unit 201; the fifth electrode 10 and the sixth electrode 11 are arranged at two ends of the second two-dimensional molybdenum disulfide layer 7, and the fifth electrode 10 and the sixth electrode 11 are used as electrodes at two ends of the resistor of the first impedance unit 201 and used for transmitting signals; the fifth electrode 10 is electrically connected to the third electrode 5, and the sixth electrode 11 is electrically connected to the fourth electrode 9. In this embodiment, the current signal is transmitted from the optical detection unit to the first impedance unit 201, the first impedance unit 201 converts the current signal generated by the first optical detection unit 101 into a voltage signal, and plays a role of signal amplification, amplifies the signal to a detection range of a subsequent logic circuit, and outputs the signal to the first signal input end of the logic unit 300 through the fifth electrode 10 and the sixth electrode 11.
Preferably, the resistance value of the first impedance unit 201 is 1M Ω -1G Ω. Wherein the thickness of the second two-dimensional molybdenum disulfide layer 7 is 5nm-20nm, and the length is 10 μm-20 μm; the thickness of the fifth electrode 10 and the 6 th electrode 11 is 50-80nm, so that better effect can be obtained.
Further optionally, as shown in fig. 2, the first light detecting unit 101 included in the optoelectronic logic switch may include: a first photosensitive two-dimensional material layer 8, a seventh electrode 12, an eighth electrode 13; wherein the first photosensitive two-dimensional material layer 8 is integrated on said fifth electrode 10 and sixth electrode 11, the first photosensitive two-dimensional material layer 8 communicating said seventh electrode 12 and eighth electrode 13. The first photosensitive two-dimensional material is a two-dimensional material sensitive to optical signals of a first preset waveband to be detected by the first optical detection unit and is used as a channel material of the equivalent phototransistor of the first optical detection unit; the seventh electrode 12 is used as the source of the equivalent phototransistor of the first photo-detection unit, the eighth electrode 13 is used as the drain of the equivalent phototransistor of the first photo-detection unit, and under the condition that the source (the seventh electrode 12) and the drain (the eighth electrode 13) of the phototransistor are biased, when the first photosensitive two-dimensional material layer 8 is under the action of light in the first preset waveband, bias voltage is applied to the source and the drain of the phototransistor to control the movement of photo-generated carriers of the phototransistor, so that photocurrent and dark current are generated, and the conversion of a photoelectric signal is realized. The seventh electrode 12 is electrically connected to the fifth electrode 10, and the eighth electrode 13 is electrically connected to the sixth electrode 11, so as to transmit an electrical signal between the first light detecting unit 101 and the first impedance unit 201.
Optionally, the distance between the seventh electrode 12 and the eighth electrode 13 is adjustable, so as to adjust the channel width of the equivalent phototransistor of the first light detecting unit 101.
Preferably, the first photosensitive two-dimensional material is two-dimensional molybdenum ditelluride or two-dimensional molybdenum disulfide, and if the first photosensitive two-dimensional material is two-dimensional molybdenum ditelluride, the first preset waveband is an infrared waveband, that is, the first light detection unit 101 is configured to detect an infrared light signal; if the first photosensitive two-dimensional material is two-dimensional molybdenum disulfide, the first preset waveband is a visible light waveband, that is, the first light detection unit 101 is used for detecting a visible light signal.
Preferably, the thickness of the first photosensitive two-dimensional material layer 8 is 10nm-30nm, the length is 10 μm-20 μm, and the thickness of each of the eighth electrode 13 and the seventh electrode 12 is 50-80 nm.
In the optoelectronic logic switch shown in fig. 2, the first optical detection unit 101 detects an optical signal of a first wavelength band, converts the optical signal into an electrical signal, and transmits the electrical signal to the first impedance unit 201, the voltage signal amplified by the first impedance unit 201 passes through the connection between the sixth electrode 11 and the fourth electrode 9, and the connection between the fifth electrode 10 and the third electrode 5 is transmitted to the logic unit 300; the logic unit 300 receives signals through the first two-dimensional boron nitride layer 6 in contact with the fourth electrode 9 and the fourth electrode 9, and outputs corresponding level logic signals at the logic unit signal output end of the second electrode 4 through level changes in the logic unit 300.
Preferably, in the present embodiment, the substrate 1 is a silicon/silicon dioxide insulating substrate. The first electrode 3, the second electrode 4, the third electrode 5, the fourth electrode 9, the fifth electrode 10 and the sixth electrode 11 are all chromium-gold metal electrodes; when the material of the first photosensitive two-dimensional material layer 8 is two-dimensional molybdenum ditelluride, the seventh electrode 12 and the eighth electrode 13 are indium-gold metal electrodes.
Example two
The embodiment provides an optoelectronic logic switch for realizing optoelectronic integration and logic operation of two wave bands. Fig. 3 is a schematic structural diagram of a second embodiment of the vertical-structure optoelectronic logic switch according to the present invention, and as shown in fig. 3, the optoelectronic logic switch of this embodiment further includes a second optical detection unit 102 and a second impedance unit 202 on the basis of the optoelectronic logic switch structure shown in fig. 2.
As shown in fig. 3, in this embodiment, the logic unit 300 further includes: a second two-dimensional boron nitride layer 14 and a ninth electrode 15 disposed between the first electrode 3 and the second electrode 4; the second two-dimensional boron nitride layer 14 is disposed on the first two-dimensional molybdenum disulfide layer 2, and the ninth electrode 15 is disposed on the second two-dimensional boron nitride layer 14.
In this embodiment, for the second light detecting unit 102 and the second impedance unit 202, the first electrode 3 is used as a second ground terminal of the logic unit 300, the second electrode 4 is used as an output terminal of a signal of the logic unit 300, and the third electrode 5 is used as a second bias applying terminal of the logic unit 300; the second two-dimensional boron nitride layer 14 and the ninth electrode 15 serve as a second signal input terminal of the logic cell 300, serving as a gate of a logic circuit.
Preferably, the second two-dimensional boron nitride 14 has a thickness of 10nm to 100nm and a length of 20 μm to 30 μm. The thickness of the ninth electrode 15 is 50-80 nm.
Further optionally, as shown in fig. 3, the second impedance unit 202 included in the optoelectronic logic switch may include: a third two-dimensional molybdenum disulfide layer 16, a tenth electrode 17, an eleventh electrode 18; wherein a third two-dimensional molybdenum disulfide layer 16 is integrated on the first electrode 3 and the ninth electrode 15, acting as a resistance of the second impedance unit 202; the tenth electrode 17 and the eleventh electrode 18 are disposed at two ends of the third two-dimensional molybdenum disulfide layer 16, and the tenth electrode 17 and the eleventh electrode 18 are used as electrodes at two ends of the resistor of the second impedance unit 202 for signal transmission; the tenth electrode 17 is electrically connected to the first electrode 3, and the eleventh electrode 18 is electrically connected to the ninth electrode 15. The second impedance unit 202 converts the current signal generated by the second optical detection unit 102 into a voltage signal, and plays a role of signal amplification, amplifies the signal to a detection range of the subsequent logic circuit 300, and outputs the signal to the second signal input end of the logic unit 300 through the fifth electrode 10 and the sixth electrode 11.
Preferably, the resistance value of the second impedance unit 202 is 1M Ω -1G Ω. Wherein the third two-dimensional molybdenum disulfide layer 16 has a thickness of 5nm-20nm and a length of 10 μm-20 μm; the tenth electrode 17 and the eleventh electrode 18 each have a thickness of 50 to 80 nm.
Further optionally, as shown in fig. 3, the second light detecting unit 102 included in the optoelectronic logic switch may include: a second photosensitive two-dimensional material layer 19, a twelfth electrode 20, a thirteenth electrode 21; wherein a second layer 19 of photosensitive two-dimensional material is integrated on said tenth electrode 17 and eleventh electrode 18, the second layer 19 of photosensitive two-dimensional material communicating said twelfth electrode 20 and thirteenth electrode 21. The second photosensitive two-dimensional material is a two-dimensional material sensitive to a second preset waveband optical signal required to be detected by the second optical detection unit and is used as a channel material of the equivalent phototransistor of the second optical detection unit; the twelfth electrode 20 serves as a source of the second photo-detection unit equivalent phototransistor; the thirteenth electrode 21 serves as a drain of the second photo-detecting unit equivalent phototransistor; under the condition that bias voltage is applied to the source electrode and the drain electrode of the phototransistor, when the second photosensitive two-dimensional material layer 19 is under the action of light in a second preset waveband, bias voltage is applied to the source electrode 21 and the drain electrode 20 of the phototransistor to control the movement of photo-generated carriers of the phototransistor, so that photocurrent and dark current are generated, and the conversion of a photoelectric signal is realized. Wherein, the twelfth electrode 20 is electrically connected with the tenth electrode 17, and the thirteenth electrode 21 is electrically connected with the eleventh electrode 18, for the transmission of the electrical signal between the first light detecting unit 101 and the first impedance unit 201.
Optionally, the distance between the twelfth electrode 20 and the thirteenth electrode 21 is adjustable, thereby achieving adjustment of the channel width of the equivalent phototransistor of the second light detecting unit 102.
Preferably, the second photosensitive two-dimensional material is two-dimensional molybdenum telluride or two-dimensional molybdenum disulfide, if the first photosensitive two-dimensional material is two-dimensional molybdenum telluride, the second photosensitive two-dimensional material is two-dimensional molybdenum disulfide, and if the first photosensitive two-dimensional material is two-dimensional molybdenum disulfide, the second photosensitive two-dimensional material is two-dimensional molybdenum telluride, that is, the first light detection unit 101 and the second light detection unit 102 are respectively configured to detect an infrared light signal and a visible light signal.
Preferably, the thickness of the second photosensitive two-dimensional material layer 19 is 10nm-30nm, the length is 10 μm-20 μm, and the thickness of each of the twelfth electrode 20 and the thirteenth electrode 21 is 50-80 nm.
In the optoelectronic logic switch shown in fig. 3, the second optical detection unit 102 detects an optical signal of the second wavelength band, converts the optical signal into an electrical signal, and transmits the electrical signal to the second impedance unit 202, the voltage signal amplified by the second impedance unit 202 is transmitted to the logic unit 300 through the connection between the tenth electrode 17 and the tenth electrode 3, and the connection between the eleventh electrode 18 and the ninth electrode 15; the logic unit 300 receives signals through the second two-dimensional boron nitride layer 14 where the ninth electrode 15 and the ninth electrode 15 are in contact, and outputs corresponding level logic signals at the logic unit signal output end of the second electrode 4 through level changes in the logic unit 300.
Preferably, in the present embodiment, the ninth electrode 15, the tenth electrode 17, and the eleventh electrode 18 are all chromium-gold metal electrodes; when the material of the second photosensitive two-dimensional material layer 19 is two-dimensional molybdenum disulfide, the thirteenth electrode 21 and the twelfth electrode 20 are chromium-gold metal electrodes.
EXAMPLE III
The embodiment provides an optoelectronic logic switch for realizing optoelectronic integration and logic operation of multiple wave bands. Fig. 4 is a top view structural diagram of a third embodiment of an opto-electronic logic switch with a vertical structure according to the present invention, and fig. 4 is a top view structural diagram schematically illustrating 4 groups of optical detection units and impedance units integrated on a logic unit 300 according to the main inventive concept shown in fig. 1. Wherein, the first light detection unit 101 and the first impedance unit 201 are stacked in a direction perpendicular to the plane shown in fig. 4 to form a first group, the second light detection unit 102 and the second impedance unit 202 are stacked in a direction perpendicular to the plane shown in fig. 4 to form a second group, the third light detection unit 103 and the third impedance unit 203 are stacked in a direction perpendicular to the plane shown in fig. 4 to form a third group, and the fourth light detection unit 104 and the fourth impedance unit 204 are stacked in a direction perpendicular to the plane shown in fig. 4 to form a fourth group; the first light detection unit 101, the second light detection unit 102, the third light detection unit 103, and the fourth light detection unit 104 are respectively configured to detect light signals of different wavelength bands.
As shown in fig. 4, the substrate 1 in the bottom logic unit 300 may be implemented as a circular cross section, the first two-dimensional molybdenum disulfide layer 2 integrated on the substrate 1 is also implemented as a circular cross section, the second electrode 4 is disposed at the top circular center position of the first two-dimensional molybdenum disulfide layer 2, and two electrodes (not shown in fig. 4) of the logic unit 300, which are respectively used as a ground terminal and a gate electrode, are further disposed at the bottom of each impedance unit, similar to the third electrode 5, the first two-dimensional boron nitride layer 6, and the fourth electrode 9 in fig. 2, and are not further described herein.
Obviously, not only 3 or 4 groups of vertical-structured light detection units and impedance units can be disposed on the logic unit 300 with a circular structure, but also several groups of vertical-structured light detection units and impedance units can be disposed and share the same logic unit according to the idea provided by the present invention, and the implementation principle thereof is similar to that of the optoelectronic logic switch shown in fig. 2 and 3, and these modified optoelectronic logic switch structures are within the protection scope of the present invention.
Further, the actual shapes of the substrate of the logic unit 300 and the first two-dimensional molybdenum disulfide layer 2 may also be specifically set according to actual needs, and are not limited to the circular structure shown in fig. 4, and are not described herein again.
Moreover, it is noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An opto-electronic logic switch in a vertical configuration, comprising: the device comprises a light detection unit, an impedance unit and a logic unit;
the optical detection unit is arranged on the top layer and used for converting the detected optical signal into a current signal;
the impedance unit is arranged at the lower layer of the optical detection unit, and the input end of the impedance unit is electrically connected with the output end of the optical detection unit; the impedance unit is used for converting the current signal generated by the optical detection unit into a voltage signal and amplifying the voltage signal to the detection range of the logic circuit;
the logic unit is arranged on the bottom layer, and the input end of the logic unit is electrically connected with the output end of the impedance unit; the logic unit is used for reversely converting the low-level voltage signal output by the impedance unit into a high-level voltage signal and outputting the high-level voltage signal.
2. The vertically structured optoelectronic logic switch of claim 1, wherein the optoelectronic logic switch comprises: at least one light detection unit, and an equal number of impedance units as the light detection units.
3. The vertically structured optoelectronic logic switch of claim 2, wherein the logic cell comprises:
a substrate (1) disposed on the bottom layer;
the first two-dimensional molybdenum disulfide layer (2), the first electrode (3) and the third electrode (5) are integrated on the substrate (1), and the first electrode (3) and the third electrode (5) are respectively arranged at two ends of the first two-dimensional molybdenum disulfide layer (2);
the second electrode (4) is arranged on the top of the first two-dimensional molybdenum disulfide layer (2) and is positioned between the first electrode (3) and the third electrode (5);
a first two-dimensional boron nitride layer (6) and a fourth electrode (9) disposed between the second electrode (4) and the third electrode (5); the first two-dimensional boron nitride layer (6) is arranged on the first two-dimensional molybdenum disulfide layer (2), and the fourth electrode (9) is arranged on the first two-dimensional boron nitride layer (6).
4. The vertically structured optoelectronic logic switch of claim 3, wherein the optoelectronic logic switch comprises a first impedance unit;
the first impedance unit includes:
a second two-dimensional molybdenum disulfide layer (7) integrated on the third electrode (5) and the fourth electrode (9) acting as a resistance of the first impedance unit;
the fifth electrode (10) and the sixth electrode (11) are arranged at two ends of the second two-dimensional molybdenum disulfide layer (7); the fifth electrode (10) is electrically connected with the third electrode (5), and the sixth electrode (11) is electrically connected with the fourth electrode (9).
5. The vertically structured optoelectronic logic switch of claim 4, wherein the optoelectronic logic switch comprises a first light detecting unit;
the first light detection unit includes:
a seventh electrode (12) electrically connected to the fifth electrode (10) and serving as a source of the first photo-detecting unit equivalent phototransistor;
an eighth electrode (13) electrically connected to the sixth electrode (11) and serving as a drain of the first photo-detecting unit equivalent phototransistor;
a first photosensitive two-dimensional material layer (8) integrated on the fifth electrode (10) and the sixth electrode (11), the first photosensitive two-dimensional material layer (8) connecting the seventh electrode (12) and the eighth electrode (13) and serving as a channel material of the equivalent phototransistor of the first photo-detection unit; the first photosensitive two-dimensional material is a two-dimensional material sensitive to a first preset waveband optical signal required to be detected by the first optical detection unit.
6. The vertically structured optoelectronic logic switch of claim 5, wherein the logic cell further comprises:
a second two-dimensional boron nitride layer (14) and a ninth electrode (15) disposed between the first electrode (3) and the second electrode (4); the second two-dimensional boron nitride layer (14) is arranged on the first two-dimensional molybdenum disulfide layer (2), and the ninth electrode (15) is arranged on the second two-dimensional boron nitride layer (14).
7. The vertically structured optoelectronic logic switch of claim 6, further comprising a second impedance unit;
the second impedance unit includes:
a third two-dimensional molybdenum disulfide layer (16) integrated on the first (3) and ninth (15) electrodes, acting as a resistance of the second impedance unit;
a tenth electrode (17) and an eleventh electrode (18) arranged at two ends of the third two-dimensional molybdenum disulfide layer (16); the tenth electrode (17) is electrically connected to the first electrode (3), and the eleventh electrode (18) is electrically connected to the ninth electrode (15).
8. The vertically structured optoelectronic logic switch of claim 7, further comprising a second light detecting unit;
the second light detection unit includes:
a twelfth electrode (20) electrically connected to the tenth electrode (17) and serving as a source of the second photo-detecting unit equivalent phototransistor;
a thirteenth electrode (21) electrically connected to the eleventh electrode (18) and serving as a drain of the second photo-detecting unit equivalent phototransistor;
a second layer (19) of photosensitive two-dimensional material integrated on said tenth (17) and eleventh (18) electrodes, said second layer (19) of photosensitive two-dimensional material communicating said twelfth (20) and thirteenth (21) electrodes and serving as channel material for equivalent phototransistors of said second light detecting unit; the second photosensitive two-dimensional material is a two-dimensional material sensitive to a second preset waveband optical signal required to be detected by the second optical detection unit.
9. The vertically structured optoelectronic logic switch of claim 5 or 8, wherein the first and second photosensitive two-dimensional materials are two-dimensional molybdenum ditelluride and two-dimensional molybdenum disulfide, respectively.
10. The vertically structured optoelectronic logic switch of claim 8, wherein the distance between the seventh electrode (12) and the eighth electrode (13) is adjustable, and/or
The distance between the twelfth electrode (20) and the thirteenth electrode (21) is adjustable.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100751920B1 (en) * | 2006-04-11 | 2007-08-24 | 고려대학교 산학협력단 | Optical receiver with compact dimension |
| US20090152664A1 (en) * | 2007-04-18 | 2009-06-18 | Ethan Jacob Dukenfield Klem | Materials, Systems and Methods for Optoelectronic Devices |
| KR20170123517A (en) * | 2016-04-29 | 2017-11-08 | 고려대학교 세종산학협력단 | Transition metal molybdenum disulfide based photosensor array structure |
| CN207475555U (en) * | 2017-10-18 | 2018-06-08 | 成都嘉纳海威科技有限责任公司 | A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system |
| CN109860310A (en) * | 2019-01-28 | 2019-06-07 | 三明学院 | A kind of voltage signal photodetector |
| CN111208865A (en) * | 2018-11-22 | 2020-05-29 | 南京大学 | Photoelectric calculation unit, photoelectric calculation array and photoelectric calculation method |
| CN111262531A (en) * | 2020-01-31 | 2020-06-09 | 京东方科技集团股份有限公司 | Detection circuit, manufacturing method thereof and detection panel |
-
2021
- 2021-01-28 CN CN202110116864.XA patent/CN112929016B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100751920B1 (en) * | 2006-04-11 | 2007-08-24 | 고려대학교 산학협력단 | Optical receiver with compact dimension |
| US20090152664A1 (en) * | 2007-04-18 | 2009-06-18 | Ethan Jacob Dukenfield Klem | Materials, Systems and Methods for Optoelectronic Devices |
| KR20170123517A (en) * | 2016-04-29 | 2017-11-08 | 고려대학교 세종산학협력단 | Transition metal molybdenum disulfide based photosensor array structure |
| CN207475555U (en) * | 2017-10-18 | 2018-06-08 | 成都嘉纳海威科技有限责任公司 | A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system |
| CN111208865A (en) * | 2018-11-22 | 2020-05-29 | 南京大学 | Photoelectric calculation unit, photoelectric calculation array and photoelectric calculation method |
| CN109860310A (en) * | 2019-01-28 | 2019-06-07 | 三明学院 | A kind of voltage signal photodetector |
| CN111262531A (en) * | 2020-01-31 | 2020-06-09 | 京东方科技集团股份有限公司 | Detection circuit, manufacturing method thereof and detection panel |
Non-Patent Citations (1)
| Title |
|---|
| GUOCHENG ZHANG 等: "High-Performance Organic Phototransistors With Vertical Structure Design", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》, vol. 66, no. 4, pages 1815 - 1818, XP011714827, DOI: 10.1109/TED.2019.2901054 * |
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