CN112928476A - 5G millimeter wave antenna based on SIGW - Google Patents
5G millimeter wave antenna based on SIGW Download PDFInfo
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- CN112928476A CN112928476A CN202110089527.6A CN202110089527A CN112928476A CN 112928476 A CN112928476 A CN 112928476A CN 202110089527 A CN202110089527 A CN 202110089527A CN 112928476 A CN112928476 A CN 112928476A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/0464—Annular ring patch
Abstract
The invention discloses a 5G millimeter wave antenna based on an SIGW, which comprises an upper dielectric plate, a middle dielectric plate and a lower dielectric plate, wherein a first copper-clad layer covers the upper surface of the upper dielectric plate, a rectangular radiation window is arranged on the first copper-clad layer, a 50 omega microstrip line, a lambda/4 impedance converter and a rectangular metal patch are attached to the lower surface of the upper dielectric plate, the 50 omega microstrip line is used for accessing an external radio frequency signal, the 50 omega microstrip line is connected with the lambda/4 impedance converter, the lambda/4 impedance converter and the rectangular metal patch, the lambda/4 impedance converter is used for carrying out impedance matching on the 50 omega microstrip line and the rectangular metal patch, a plurality of circular holes which penetrate through the lower dielectric plate up and down are arranged on the periphery of each circular hole, an annular metal patch which is coaxial with the circular hole is arranged on the periphery of each circular hole, and an electromagnetic field band gap structure is formed by the lower dielectric plate, the plurality, the lower surface of the lower dielectric substrate is wholly exposed outside; the advantages are simple structure, low cost, low profile and large impedance bandwidth.
Description
Technical Field
The invention relates to a 5G millimeter wave antenna, in particular to a 5G millimeter wave antenna based on a serving gateway (SIGW).
Background
The antenna is an exit and an entrance of radio waves, and is an essential important device for a wireless communication system such as 5G. The characteristics of ultra-large bandwidth, ultra-high speed and ultra-low time delay make the 5G wireless communication system urgently need the antenna with large bandwidth and high gain. High-frequency millimeter waves are a necessary trend for the development of 5G wireless communication systems. However, the loss of the conventional rectangular waveguide, microstrip line and strip line is large in the millimeter wave band, which limits the application of the conventional rectangular waveguide, microstrip line and strip line in the high frequency band.
The Substrate Integrated Waveguide (SIW) combines the advantages of the conventional rectangular waveguide, microstrip line and stripline, and well solves the above problems. However, as the frequency increases, its performance also decreases. And the transmission mode of SIW is TE mode, which is not easy to integrate with TEM or quasi-TEM transmission line, resulting in switching loss. The Gap Waveguide (GW) transmits quasi-TEM modes with small conversion losses, however its air gap height cannot be made constant throughout the circuit, leading to unknown performance degradation.
In 2016, Substrate Integrated Gap Waveguide (SIGW) technology was proposed. The Substrate Integrated Gap Waveguide (SIGW) technology effectively makes up the defects of the SIW and the GW while combining the advantages of the SIW and the GW. However, in the application of the 5G millimeter wave antenna, the number of antennas realized by adopting the substrate integrated gap waveguide structure is still small, and the existing 5G millimeter wave antenna based on the SIGW has the disadvantages of complex structure, high cost, high profile, relative bandwidth lower than 42%, and insufficient bandwidth, and cannot meet the requirement of the ultra wide band of the 5G communication system.
Disclosure of Invention
The invention aims to provide a 5G millimeter wave antenna based on the SIGW, which has the advantages of simple structure, lower cost, low profile and larger impedance bandwidth.
The technical scheme adopted by the invention for solving the technical problems is as follows: A5G millimeter wave antenna based on SIGW comprises an upper dielectric plate, a middle dielectric plate and a lower dielectric plate which are stacked from top to bottom in sequence, wherein the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixedly connectedThe upper surface of the upper dielectric slab is covered with a first copper-clad layer, a rectangular radiation window is arranged on the first copper-clad layer, the upper surface of the upper dielectric slab is exposed at the rectangular window, a 50 omega microstrip line, a lambda/4 impedance converter and a rectangular metal patch are attached to the lower surface of the upper dielectric slab, and lambda is c/f0Wherein f is0C is the central frequency of the 5G millimeter wave antenna and c is the speed of light in free space (3 x 10)8m/s), the 50 Ω microstrip line is used for accessing an external radio frequency signal, the 50 Ω microstrip line is connected with the λ/4 impedance converter, the λ/4 impedance converter and the rectangular metal patch, the λ/4 impedance converter is used for performing impedance matching on the 50 Ω microstrip line and the rectangular metal patch, a plurality of round holes penetrating up and down are arranged on the lower dielectric plate, the round holes are distributed in n rows and m columns, n is an integer greater than or equal to 5 and less than or equal to 9, m is an integer greater than or equal to 3 and less than or equal to 10, the central intervals of adjacent round holes are equal, the interval is marked as P, two rows and two rows of P are 2.2mm, the central intervals of two adjacent rows of round holes are equal, the interval is equal to P, and an annular metal patch coaxial with the round holes is arranged around each round hole, the inner diameter of the annular metal patch is equal to the diameter of the circular hole, the outer diameter of the annular metal patch is recorded as Dc, the diameter of the circular hole is recorded as D, and the Dc and D have the following relations: 0 < Dc-D < 0.7mm, the lower layer dielectric substrate, the plurality of round holes and the plurality of annular metal patches arranged around the round holes form an EGB structure (electromagnetic field band gap structure), and the whole lower surface of the lower layer dielectric substrate is exposed outside.
The upper dielectric plate, the middle dielectric plate and the lower dielectric plate are all made of TLY-5PCB substrates, the thickness of the upper dielectric plate is 0.762mm, the thickness of the middle dielectric plate is 0.254mm, and the thickness of the lower dielectric plate is 0.762 mm.
The upper-layer dielectric slab is formed by integrally connecting a first rectangular slab and a second rectangular slab, the middle-layer dielectric slab and the bottom-layer dielectric slab are rectangular slabs, when the upper-layer dielectric slab, the middle-layer dielectric slab and the lower-layer dielectric slab are stacked, the first rectangular slab, the middle-layer dielectric slab and the lower-layer dielectric slab are completely overlapped, the 50 omega microstrip line extends from the lower end face of the second rectangular slab to the lower end face of the first rectangular slab, the rear end face of the 50 omega microstrip line is flush with the rear end face of the second rectangular slab, the lambda/4 impedance converter is realized by adopting a rectangular metal block, the rear end face of the lambda/4 impedance converter is integrally connected with the front end face of the 50 omega microstrip line, and the front end face of the lambda/4 impedance converter is integrally connected with the rear end face of the rectangular metal patch, the 50 omega microstrip line along the left and right direction width be 1.5mm, along the length of fore-and-aft direction 2.6mm, thickness be 36 mu m, lambda/4 impedance converter along the fore-and-aft direction length be 2.3mm, along the left and right direction width be 1mm, thickness be 36 mu m, rectangular metal patch along the fore-and-aft direction length be 2.5mm, along the left and right direction length be 2.6mm, thickness be 36 mu m, annular metal patch thickness be 36 mu m.
The upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixedly connected through a plurality of screws.
Compared with the prior art, the 5G millimeter wave antenna based on the SIGW is formed by the upper dielectric plate, the middle dielectric plate and the lower dielectric plate which are sequentially stacked from top to bottom, the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixedly connected, the upper surface of the upper dielectric plate is covered with the first copper-coated layer, the first copper-coated layer is provided with the rectangular radiation window, the upper surface of the upper dielectric plate is exposed at the rectangular window, the lower surface of the upper dielectric plate is attached with the 50 omega microstrip line, the lambda/4 impedance converter and the rectangular metal patch, and lambda is c/f0Wherein f is0Is the center frequency of the 5G millimeter wave antenna, and c is the speed of light in free space (3 x 10)8m/s), the 50 omega microstrip line is used for accessing an external radio frequency signal, the 50 omega microstrip line is connected with a lambda/4 impedance converter, the lambda/4 impedance converter and a rectangular metal patch, and the lambda/4 impedance converter is used for carrying out impedance matching on the 50 omega microstrip line and the rectangular metal patchThe lower medium plate is provided with a plurality of circular holes which penetrate through the lower medium plate up and down, the circular holes are distributed in n rows and m columns, n is an integer which is more than or equal to 5 and less than or equal to 9, m is an integer which is more than or equal to 3 and less than or equal to 10, the center interval of two adjacent rows of circular holes is equal, the interval is marked as P, P is 2.2mm, the center interval of two adjacent rows of circular holes is equal, the interval is equal to P, an annular metal patch which is coaxial with each circular hole is arranged around each circular hole, the inner diameter of each annular metal patch is equal to the diameter of the circular hole, the outer diameter of each annular metal patch is marked as Dc, and the diameters of the circular holes are marked as: 0 < Dc-D < 0.7mm, an EGB structure (electromagnetic band gap structure) is formed by the lower dielectric substrate, a plurality of round holes and annular metal patches arranged around the round holes, the lower surface of the lower dielectric substrate is wholly exposed outside, a copper layer is covered on the upper dielectric plate of the upper dielectric plate to form an ideal electric conductor PEC, periodic metalized through holes (round holes) are punched on the lower dielectric plate, a copper layer (annular metal patch) is covered on the outer side of the round holes to form an ideal magnetic conductor (PMC), a mushroom-shaped periodic structure is constructed, a middle dielectric plate is a blank plate positioned between the upper layer and the bottom layer to separate the upper dielectric plate and the bottom dielectric plate, due to the separation of the middle dielectric plate, the 50 omega, lambda/4 impedance converter and the rectangular microstrip line metal patches can be flexibly and randomly arranged, the worry that the PMC is restricted by the periodic structure is avoided, and an Electromagnetic Band Gap (EBG) structure with band elimination characteristic can be formed between the PEC and the bottom, as long as the working frequency band of the antenna is contained in the impedance band, the EBG structure can prevent the electromagnetic wave from propagating in other directions, so when the electromagnetic wave is input through the 50 omega microstrip line, the electromagnetic wave only propagates along the step-shaped microstrip line formed by the 50 omega microstrip line, the lambda/4 impedance converter and the rectangular metal patch, therefore, the invention has the advantages of simple structure, low cost, low profile and larger impedance bandwidth.
Drawings
FIG. 1 is an exploded view of a SIGW based 5G millimeter wave antenna of the present invention;
FIG. 2 is a cross-sectional view of a SIGW based 5G millimeter wave antenna of the present invention;
FIG. 3 is a top view of the upper dielectric plate of the SIGW based 5G millimeter wave antenna of the present invention;
FIG. 4 is a bottom view of the upper dielectric plate of the SIGW based 5G millimeter wave antenna of the present invention;
FIG. 5 is a schematic diagram of a middle dielectric plate of a 5G millimeter wave antenna based on a SIGW according to the present invention;
FIG. 6 is a top view of the lower dielectric plate of the SIGW based 5G millimeter wave antenna of the present invention;
FIG. 7 is a bottom view of the lower dielectric plate of the SIGW based 5G millimeter wave antenna of the present invention;
FIG. 8 is a diagram of an electric field simulation distribution of a 5G millimeter wave antenna based on a SIGW according to the present invention;
FIG. 9 is a simulation plot of S11 for a 5G millimeter wave antenna based on a SIGW according to the present invention;
FIG. 10 is a simulation curve of S11 when the width of the λ/4 impedance converter of the 5G millimeter wave antenna based on the SIGW is between 0.6 mm and 1.0 mm;
FIG. 11 is a center frequency pattern for a SIGW based 5G millimeter wave antenna of the present invention;
FIG. 12 is a 5G millimeter wave antenna S based on the SIGW of the present invention11And comparing the actual measurement curve with the simulation curve.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
Example (b): as shown in fig. 1 to 7, a 5G millimeter wave antenna based on a SIGW includes an upper dielectric plate 1, a middle dielectric plate 2, and a lower dielectric plate 3 stacked in order from top to bottom, the upper dielectric plate 1, the middle dielectric plate 2, and the lower dielectric plate 3 are fixedly connected, an upper surface of the upper dielectric plate 1 is covered with a first copper-clad layer 4, a rectangular radiation window 5 is disposed on the first copper-clad layer 4, an upper surface of the upper dielectric plate 1 is exposed at the radiation window 5, a 50 Ω microstrip line 6, a λ/4 impedance converter 7, and a rectangular metal patch 8 are attached to a lower surface of the upper dielectric plate 1, where λ ═ c/f0Wherein f is0Is the center frequency of the 5G millimeter wave antenna, and c is the speed of light in free space (3 x 10)8m/s), the 50 omega microstrip line 6 is used for accessing an external radio frequency signal, the 50 omega microstrip line 6 is connected with the lambda/4 impedance converter 7, the lambda/4 impedance converter 7 and the rectangular metal patch 8,the λ/4 impedance converter 7 is used for performing impedance matching between a 50 Ω microstrip line 6 and a rectangular metal patch 8, a plurality of circular holes 9 penetrating through the lower dielectric plate 3 are arranged on the lower dielectric plate 3, the circular holes 9 are distributed in n rows and m columns, n is an integer greater than or equal to 5 and less than or equal to 9, m is an integer greater than or equal to 3 and less than or equal to 10, the centers of two adjacent rows of circular holes 9 are spaced equally, the distance is P, P is 2.2mm, the centers of two adjacent rows of circular holes 9 are spaced equally, the distance is P, an annular metal patch 10 coaxial with each circular hole 9 is arranged around each circular hole 9, the inner diameter of each annular metal patch 10 is equal to the diameter of the circular hole 9, the outer diameter of each annular metal patch 10 is designated as Dc, the diameters of the circular holes 9 are designated as D, and the following relationships: 0 < Dc-D < 0.7mm, the lower layer dielectric substrate, the plurality of round holes 9 and the annular metal patches 10 arranged around the plurality of round holes 9 form an EGB structure (electromagnetic field band gap structure), the lower layer dielectric substrate, each round hole 9 and the annular metal patches 10 arranged around the round holes 9 form an EGB unit 101, and the lower surface of the lower layer dielectric substrate is wholly exposed outside.
In this embodiment, the upper dielectric plate 1, the middle dielectric plate 2 and the lower dielectric plate 3 all have a relative dielectric constant ∈rThe thickness of the upper dielectric plate 1 is 0.762mm, the thickness of the middle dielectric plate 2 is 0.254mm, and the thickness of the lower dielectric plate 3 is 0.762 mm.
In this embodiment, the upper dielectric slab 1 is formed by integrally connecting a first rectangular slab 11 and a second rectangular slab 12, the middle dielectric slab 2 and the lower dielectric slab 3 are rectangular slabs, when the upper dielectric slab 1, the middle dielectric slab 2 and the lower dielectric slab 3 are stacked, the first rectangular slab 11, the middle dielectric slab 2 and the lower dielectric slab 3 are completely overlapped, the 50 Ω microstrip line 6 extends from the lower end face of the second rectangular slab 12 to the lower end face of the first rectangular slab 11, the rear end face of the 50 Ω microstrip line 6 is flush with the rear end face of the second rectangular slab 12, the λ/4 impedance converter 7 is implemented by using a rectangular metal block, the rear end face of the λ/4 impedance converter 7 is connected with the front end face of the 50 Ω microstrip line 6 by integrally forming, the front end face of the λ/4 impedance converter 7 is connected with the rear end face of the rectangular metal patch 8 by integrally forming, the width of the 50 Ω microstrip line 6 in the left-right direction is 1.5mm, The length in the front-rear direction was 2.6mm and the thickness was 36 μm, the length in the front-rear direction of the λ/4 impedance converter 7 was 2.3mm, the width in the left-right direction was 1mm and the thickness was 36 μm, the length in the front-rear direction of the rectangular metal patch 8 was 2.5mm, the length in the left-right direction was 2.6mm and the thickness was 36 μm, and the thickness of the annular metal patch 10 was 36 μm.
In this embodiment, the upper dielectric plate 1, the middle dielectric plate 2, and the lower dielectric plate 3 are fixedly connected by a plurality of screws, the upper dielectric plate 1, the middle dielectric plate 2, and the lower dielectric plate 3 are respectively provided with a plurality of threaded holes 13, wherein the threaded holes 13 on the lower dielectric plate 3 can cover several circular holes 9 and several annular metal patches 10 located at the outermost ring without affecting the performance of the antenna.
The SIGW-based 5G millimeter-wave antenna of the present invention was simulated using the electromagnetic software HFSS. In simulation, the length of the first rectangular plate 11 in the front-back direction is 17mm, the width in the left-right direction is 17mm, the length of the second rectangular plate 12 in the front-back direction is 2mm, the width in the left-right direction is 8mm, the length of the middle dielectric plate 2 in the front-back direction is 17mm, the width in the left-right direction is 17mm, the length of the lower dielectric plate 3 in the front-back direction is 17mm, the width in the left-right direction is 17mm, the value of m is 6, the value of n is 7, the length of the radiation window 5 in the front-back direction is Ls, the width in the left-right direction is Ws, the width of the 50 Ω microstrip line 6 in the left-right direction is W1, the width of the λ/4 impedance converter 7 in the left-right direction is W2, the width of the rectangular metal patch 8 in the left-right direction is W3, and the initial values of the:
TABLE 15G initial value of millimeter wave antenna parameter (unit: mm)
The electric field simulation distribution diagram of the 5G millimeter wave antenna based on the SIGW is shown in FIG. 8. As can be seen from fig. 8, in the SIGW-based 5G millimeter wave antenna of the present invention, electromagnetic waves basically propagate only along the stepped microstrip line formed by the 50 Ω microstrip line 6, the λ/4 impedance transformer 7, and the rectangular metal patch 8, thereby verifying that the electric field distribution in the present invention is in the quasi-TEM mode.
The simulation curve of S11 of the 5G millimeter wave antenna based on the SIGW of the present invention is shown in fig. 9, and it can be known from analyzing fig. 9 that: the impedance bandwidth of the 5G millimeter wave antenna based on the SIGW is 26.75 GHz-42.75 GHz, the relative bandwidth is 49.6%, and the relative bandwidth is improved by about 8% compared with the prior art.
The initial value of the width W2 of the 5G millimeter wave antenna based on the SIGW is 1.0mm in the lambda/4 impedance converter, the value of the width W2 is changed to be 0.6-1.0mm, and at the moment, an S11 simulation curve is shown in figure 10. Analysis of FIG. 10 reveals that: at W2The improvement is more obvious when the thickness is 0.8mm and 0.9 mm; when W2 is 0.8mm, the impedance bandwidth of the SIGW-based 5G millimeter wave antenna is 25.75 GHz-42.75 GHz, the center frequency is 33GHz, and the corresponding S11Is-33.2 dB, and the relative bandwidth is 49.6 percent; when W2 is 0.9mm, the resonance depth is the largest, and the lower cutoff frequency is larger than that when W2 is 0.8mm, but the center frequency is shifted, and the optimum value of W2 is 0.8mm in comprehensive consideration.
The directional pattern of the center frequency of the SIGW-based 5G millimeter wave antenna of the present invention is shown in fig. 11. The H-plane and E-plane patterns at the center frequency point are shown in fig. 11, respectively, and it can be seen from fig. 11 that: the maximum gain of the antenna at the central frequency is about 9.2dBi, the gain is high and stable, the side lobe is small, the maximum rear lobe is-8.8 dBi, the front-rear ratio is good, and the symmetry and the directionality are good.
In order to verify the consistency of the actual performance of the 5G millimeter wave antenna based on the SIGW and the simulation result, an antenna real object is manufactured according to the size obtained by simulation optimization, and corresponding tests are carried out. During testing, a Keysight PNA N5224A vector network analyzer is used for measuring S parameters, the impedance bandwidth measured by the antenna is 25.9 GHz-43.5 GHz, the center frequency is 32.8GHz, and the relative bandwidth is 50.7%. 5G millimeter wave antenna S based on SIGW11The measured and simulated contrast curves are shown in fig. 12. As can be seen from the analysis of FIG. 12, the measured data and the simulation result are better matchedHowever, the center frequency is slightly shifted, and the measured echo loss is slightly increased in the range of 25 to 36GHz, which may cause inconsistency between the measured result and the simulation:
firstly, a coaxial microstrip adapter is added during actual measurement, and simulation is not available;
secondly, the actual measurement test environment cannot be compared with the simulated ideal environment;
thirdly, the physical copper coating is thick and cannot be equal to the ideal 0.
The performance of the SIGW-based 5G millimeter wave antenna of the present invention was compared with that of the existing antenna, and the specific data are shown in table 2.
TABLE 2
In table 2, the circularly polarized slot Antenna is an Antenna disclosed in document 1 (horse ultra Integrated Substrate Gap Waveguide (ISGW) millimeter wave Antenna research [ D ]. Yunnan, Yunnan University,2018 Ma C J. Substrate Integrated Gap Waveguide (SIGW) Antenna for narrow Antenna application [ D ]. Yunnan: Yunnan University,2018), and the tapered slot Antenna is an Antenna disclosed in document 2 (wing X, Yao Y, Yu J, et al. Analysis table 2 shows that the 5G millimeter wave antenna based on the SIGW has better performance indexes on the maximum gain and impedance bandwidth compared with the conventional antenna, and the relative bandwidth is improved by more than 9%.
In summary, the impedance bandwidth of the 5G millimeter wave antenna based on the SIGW of the invention reaches 50.7%, and the maximum gain in the band is 9.2 dBi. The antenna has the advantages of large bandwidth, stable gain, small size and easy integration, can adopt a layered processing mode to save cost, and is very suitable for being used as an intelligent unit of a 5G multi-antenna system.
Claims (4)
1. A5G millimeter wave antenna based on an SIGW is characterized by comprising an upper dielectric plate, a middle dielectric plate and a lower dielectric plate which are sequentially stacked from top to bottom, wherein the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixedly connected, a first copper-coated layer covers the upper surface of the upper dielectric plate, a rectangular radiation window is arranged on the first copper-coated layer, the upper surface of the upper dielectric plate is exposed at the rectangular window, a 50 omega microstrip line, a lambda/4 impedance converter and a rectangular metal patch are attached to the lower surface of the upper dielectric plate, and lambda is c/f0Wherein f is0C is the central frequency of the 5G millimeter wave antenna and c is the speed of light in free space (3 x 10)8m/s), the 50 Ω microstrip line is used for accessing an external radio frequency signal, the 50 Ω microstrip line is connected with the λ/4 impedance converter, the λ/4 impedance converter and the rectangular metal patch, the λ/4 impedance converter is used for performing impedance matching on the 50 Ω microstrip line and the rectangular metal patch, a plurality of round holes penetrating up and down are arranged on the lower dielectric plate, the round holes are distributed in n rows and m columns, n is an integer greater than or equal to 5 and less than or equal to 9, m is an integer greater than or equal to 3 and less than or equal to 10, the center intervals of adjacent round holes are equal, the interval is marked as P, two rows and two rows of P are 2.2mm, the center intervals of two adjacent rows of round holes are equal, the interval is equal to P, and an annular metal patch coaxial with the round holes is arranged around each round hole, the inner diameter of the annular metal patch is equal to the diameter of the circular hole, the outer diameter of the annular metal patch is recorded as Dc, the diameter of the circular hole is recorded as D, and the Dc and D have the following relations: 0 < Dc-D < 0.7mm, the lower layer dielectric substrate, the plurality of round holes and the plurality of annular metal patches arranged around the round holes form an EGB structure (electromagnetic field band gap structure), and the whole lower surface of the lower layer dielectric substrate is exposed outside.
2. The 5G millimeter wave antenna based on the SIGW of claim 1, wherein the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are all made of TLY-5PCB substrates, the thickness of the upper dielectric plate is 0.762mm, the thickness of the middle dielectric plate is 0.254mm, and the thickness of the lower dielectric plate is 0.762 mm.
3. The 5G millimeter wave antenna based on the SIGW of claim 1, wherein the upper dielectric plate is formed by integrally connecting a first rectangular plate and a second rectangular plate, the middle dielectric plate and the bottom dielectric plate are both rectangular plates, when the upper dielectric plate, the middle dielectric plate and the bottom dielectric plate are stacked, the first rectangular plate, the middle dielectric plate and the bottom dielectric plate are completely overlapped, the 50 Ω microstrip line extends from the lower end surface of the second rectangular plate to the lower end surface of the first rectangular plate, the rear end surface of the 50 Ω microstrip line is flush with the rear end surface of the second rectangular plate, the λ/4 impedance converter is realized by a rectangular metal block, the rear end surface of the λ/4 impedance converter is integrally connected with the front end surface of the 50 Ω microstrip line, the front end face of the lambda/4 impedance converter is integrally connected with the rear end face of the rectangular metal patch, the width of the 50 omega microstrip line along the left-right direction is 1.5mm, the length of the 50 omega microstrip line along the front-back direction is 2.6mm, the thickness of the 50 omega microstrip line is 36 mu m, the length of the lambda/4 impedance converter along the front-back direction is 2.3mm, the width of the lambda/4 impedance converter along the left-right direction is 1mm, the thickness of the lambda/4 impedance converter along the left-right direction is 36 mu m, the length of the rectangular metal patch along the front-back direction is 2.5mm, the length of the rectangular metal patch along the left-right direction is 2.6mm, the thickness of the rectangular metal patch is 36.
4. The 5G millimeter wave antenna based on the SIGW of claim 1, wherein the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixedly connected through a plurality of screws.
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| 刘志俣: "基于集成基片间隙波导毫米波超宽带宽缝天线研究", 《中国优秀硕士学位论文全文数据库（电子期刊）》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114243275A (en) * | 2022-02-25 | 2022-03-25 | 深圳小米通讯技术有限公司 | Antenna structure and terminal equipment |
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Application publication date: 20210608 |