CN112928227A - Display panel packaging structure, preparation method thereof and display panel - Google Patents
Display panel packaging structure, preparation method thereof and display panel Download PDFInfo
- Publication number
- CN112928227A CN112928227A CN202110118794.1A CN202110118794A CN112928227A CN 112928227 A CN112928227 A CN 112928227A CN 202110118794 A CN202110118794 A CN 202110118794A CN 112928227 A CN112928227 A CN 112928227A
- Authority
- CN
- China
- Prior art keywords
- grains
- sublayer
- grain size
- layer
- average grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a display panel packaging structure, a preparation method thereof and a display panel, belonging to the technical field of display packaging, wherein the packaging structure at least comprises a first inorganic layer and an organic layer which are arranged in a stacked manner; the first inorganic layer comprises at least two sublayers arranged in a laminated manner, and each sublayer comprises a plurality of crystal grains; the two sublayers are a first sublayer and a second sublayer, the first sublayer comprises a plurality of first crystal grains, and the second sublayer comprises a plurality of second crystal grains; the average grain size of the first crystal grains is different from the average grain size of the second crystal grains. The preparation method of the packaging structure of the display panel is also disclosed. The display panel comprises an array substrate, an organic light emitting layer and the packaging structure, wherein the organic light emitting layer is located on one side of the array substrate, and the packaging structure is located on one side, far away from the array substrate, of the organic light emitting layer. The invention can improve the toughness of the first inorganic layer, can maintain higher strength while enhancing the toughness, and is beneficial to improving the packaging effect of the display panel.
Description
Technical Field
The invention relates to the technical field of display packaging, in particular to a packaging structure of a display panel, a preparation method of the packaging structure and the display panel.
Background
In the present display devices, flexible displays have been regarded as a new generation of prospective display technologies due to their features of high lightness, impact resistance, flexibility, wearability, and portability. In the production process of the flexible display panel, the display panel needs to be packaged in order to prevent the water and oxygen from permeating into the components to cause the failure of the components. Currently, Thin-Film Encapsulation (TFE) is a widely used Encapsulation method in flexible display manufacturing. The thin film packaging technology utilizes one or more layers of inorganic materials or inorganic/organic material superposition to realize water and oxygen resistance.
The homogeneous inorganic barrier layer in the thin film package has limited bending resistance, and is prone to stress concentration due to instability of a Chemical Vapor Deposition (CVD) process, resulting in package failure. Because the currently commonly used thin film package has at least two inorganic barrier layers, the final packaging effect of the thin film package is greatly influenced.
Therefore, it is an urgent technical problem to be solved by those skilled in the art to provide a display panel package structure, a method for manufacturing the same, and a display panel, which can enhance the toughness of a thin film package inorganic barrier layer and further improve the thin film package effect.
Disclosure of Invention
In view of this, the invention provides a display panel package structure, a manufacturing method thereof and a display panel, so as to solve the problems that in the prior art, the inorganic barrier layer in the film package has limited bending resistance, the toughness of the film package is not strong enough, and the package effect is easily affected.
The invention discloses a packaging structure of a display panel, which at least comprises a first inorganic layer and an organic layer which are stacked; the first inorganic layer comprises at least two sublayers arranged in a laminated manner, and each sublayer comprises a plurality of crystal grains; the two sublayers are a first sublayer and a second sublayer, the first sublayer comprises a plurality of first crystal grains, and the second sublayer comprises a plurality of second crystal grains; the average grain size of the first crystal grains is different from the average grain size of the second crystal grains.
Based on the same inventive concept, the invention also discloses a preparation method of the packaging structure of the display panel, which comprises the following steps: providing an array substrate; depositing a first inorganic material on the array substrate at a first deposition speed to form a first sublayer, wherein the first sublayer comprises a plurality of first crystal grains; depositing a second inorganic material on the first sublayer at a second deposition speed to form a second sublayer, wherein the second sublayer comprises a plurality of second crystal grains; wherein the first deposition speed is different from the second deposition speed, and the average grain diameter of the first crystal grains is different from that of the second crystal grains; an organic layer is formed on the second sublayer.
Based on the same inventive concept, the invention also discloses a display panel, which comprises an array substrate, an organic light-emitting layer and the packaging structure, wherein the organic light-emitting layer is positioned on one side of the array substrate, and the packaging structure is positioned on one side of the organic light-emitting layer far away from the array substrate.
Compared with the prior art, the packaging structure of the display panel, the preparation method thereof and the display panel provided by the invention at least realize the following beneficial effects:
the packaging structure of the display panel provided by the invention can be a thin film packaging structure and is used for packaging the flexible display panel. The packaging structure at least comprises a first inorganic layer and an organic layer which are arranged in a stacked mode, wherein the first inorganic layer can be a structure at least comprising two sublayers arranged in the stacked mode, the first sublayer comprises a plurality of first crystal grains, the second sublayer comprises a plurality of second crystal grains, the average grain diameter of the first crystal grains is different from that of the second crystal grains, namely in the crystal grains of each sublayer of the first inorganic layer, a design that the average grain diameter is changed in a gradient mode is used, for example, in the direction that the first sublayer vertically points to the second sublayer, through chemical vapor deposition distribution of the gradient structure, strain gradient can be induced, uniaxial stress is converted into multiaxial stress, so that stress concentration of the first inorganic layer is reduced, the overall toughness of the material of the first inorganic layer is improved, and dislocation accumulation and interaction among the crystal grains occur in the first inorganic layer due to different average grain diameters, the first inorganic layer of the gradient structure comprising the first sub-layer and the second sub-layer has additional strain hardening capacity, namely, higher shaping, and can simultaneously improve the physical property and the chemical property of the packaging structure. According to the packaging structure of the display panel, the structure of the first inorganic layer is improved, the average grain diameter of the crystal grains of at least two sub-layers of the first inorganic layer is in gradient change, the toughness of the first inorganic layer can be improved, the strength and the toughness of the first inorganic layer are well balanced, the toughness is enhanced, the high strength can be maintained, and the packaging effect of the packaging structure of the display panel is improved.
Of course, it is not necessary for any product in which the present invention is practiced to specifically achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic cross-sectional view of a package structure of a display panel according to an embodiment of the invention;
fig. 2 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
FIG. 3 is a graph showing the relationship between strength and toughness of a metal material in the related art;
fig. 4 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
fig. 5 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
fig. 6 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
fig. 7 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
fig. 8 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
fig. 9 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the invention;
fig. 10 is a flowchart of a method for manufacturing an encapsulation structure of a display panel according to an embodiment of the present invention;
FIG. 11 is a schematic structural diagram after a first sub-layer is formed on the array substrate;
FIG. 12 is a schematic view of the structure after forming a second sub-layer over the first sub-layer;
fig. 13 is a schematic structural view after an organic layer is formed on the second sublayer;
fig. 14 is a flowchart of a method for manufacturing an encapsulation structure of a display panel according to another embodiment of the invention;
FIG. 15 is a schematic view of the structure after a third sub-layer is formed over the second sub-layer;
fig. 16 is a schematic structural view after an organic layer is formed on the third sublayer;
fig. 17 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic cross-sectional view of an encapsulation structure of a display panel according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional view of another encapsulation structure of a display panel according to an embodiment of the present invention, where the encapsulation structure 000 of a display panel according to the present embodiment at least includes a first inorganic layer 10 and an organic layer 20, which are stacked;
the first inorganic layer 10 includes at least two sublayers 00 disposed in a stack, each sublayer 00 including a plurality of crystal grains; the two sublayers are a first sublayer 101 and a second sublayer 102, the first sublayer 101 includes a plurality of first grains 1011, and the second sublayer 102 includes a plurality of second grains 1021;
the average particle diameter D1 of the first crystal grains 1011 is different from the average particle diameter D2 of the second crystal grains 1021. It is understood that the shape of the grains in each sublayer 00 of the first inorganic layer 10 may be spherical, hexahedral, octahedral, or other shapes, and this embodiment is not particularly limited, and it is only required to satisfy that the average grain size of the first grains 1011 is different from the average grain size of the second grains 1021, and the average grain sizes of the grains in the same sublayer 00 are substantially the same, and fig. 1 and fig. 2 are only schematically illustrated by taking a sphere as an example. The grain size represents the linear size of the grain size, and since the grains are in most cases non-spherical particles, the grain size is generally expressed by the grain size or grain size, not by the diameter
Specifically, the package structure 000 of the display panel provided in this embodiment may be a thin film package structure, and is used for packaging a flexible display panel. The encapsulation structure 000 at least includes a first inorganic layer 10 and an organic layer 20, which are stacked, wherein the first inorganic layer 10 may be a structure including at least two sublayers 00, each sublayer 00 includes a plurality of crystal grains, the crystal grains may be formed by Chemical Vapor Deposition (CVD), and a plurality of crystal grains are deposited to form a thin film of the first inorganic layer 10, it is understood that the shape of the crystal grains formed by the CVD may be unfixed, that is, the shape of the crystal grains of the same sublayer 00 is not completely the same, and only crystal grains with substantially the same average grain size may be formed in the same sublayer 00. The chemical vapor deposition method is to ionize gas containing film constituent atoms by means of microwave or radio frequency and the like to form plasma locally, and the plasma is very chemically active and can easily react, so that a desired film can be deposited on a substrate. The two sub-layers 00 of this embodiment are the first sub-layer 101 and the second sub-layer 102, and optionally, the first sub-layer 101 may be located on one side of the second sub-layer 102 close to the organic layer 20 (as shown in fig. 1), or the second sub-layer 102 may be located on one side of the first sub-layer 101 close to the organic layer 20 (as shown in fig. 2).
In the present embodiment, the first sublayer 101 includes a plurality of first grains 1011, the second sublayer 102 includes a plurality of second grains 1021, the average grain size D1 of the first grains 1011 is different from the average grain size D2 of the second grains 1021, and each sublayer 00 of the first inorganic layer 10 is formed by chemical vapor deposition, and by changing the deposition conditions (such as deposition speed, etc.), the average grain size of the grains of each sublayer 00 of the first inorganic layer 10 can be different, while the average grain size of the grains of each sublayer 00 formed by the chemical vapor deposition technique is substantially uniform. For example, the first sublayer 101 includes a plurality of first grains 1011, the second sublayer 102 includes a plurality of second grains 1021, the average grain size D1 of the first grains 1011 is different from the average grain size D2 of the second grains 1021, and optionally, the average grain size D1 of the first grains 1011 may be larger than the average grain size D2 of the second grains 1021 (not shown in the drawings), or the average grain size D1 of the first grains 1011 may be smaller than the average grain size D2 of the second grains 1021 (as shown in fig. 1 and fig. 2). The crystal grains of the sub-layers 00 of the first inorganic layer 10 in this embodiment use a design in which the average grain size changes in a gradient manner, that is, the first inorganic layer 10 includes coarse grains with a relatively large grain size, and the first inorganic layer 10 further includes nano-crystals with a relatively small grain size, or when the first inorganic layer 10 includes three sub-layers 00 stacked together, transition crystals between the coarse grains and the nano-crystals may be included. The nano crystals are arranged densely due to smaller size, the dislocation among the crystal grains is less, generally speaking, the nano crystals have high strength, and the coarse crystals with larger size have larger size, so that gaps can exist among the crystal grains as stored dislocation for toughness deformation, and the toughness of the material can be improved. It can be understood that in the longitudinal direction Z (e.g., the direction in which the first sub-layer 101 perpendicularly points to the second sub-layer 102), through the cvd distribution of the gradient structure, a strain gradient can be induced to convert uniaxial stress into multiaxial stress, so as to reduce stress concentration in the first inorganic layer 10, which is beneficial to improve the overall toughness of the material of the first inorganic layer 10. In the longitudinal direction Z, each of the different sublayers 00 has grains with different average grain sizes, and when the grains deform under the action of transverse uniaxial stress, the stress on the grains with different average grain sizes can be decomposed into stresses with different axial directions, so that the decomposition of the uniaxial stress can be completed, the uniaxial stress can be decomposed into multiaxial stresses in multiple directions, and the uncoordinated deformation among the grains with different average grain sizes can shunt the stress in each direction, thereby reducing the stress concentration of the first inorganic layer 10; and the dislocation accumulation and the interaction between the crystal grains of different average grain sizes occur in the first inorganic layer 10, so that the first inorganic layer 10 with the gradient structure comprising the first sublayer 101 and the second sublayer 102 has additional strain hardening capacity, i.e. higher shaping, and can simultaneously improve the physical property and the chemical property of the packaging structure.
It is understood that, as shown in fig. 3, fig. 3 is a graph showing the relationship between strength and toughness of a metal material as an example in the related art, the abscissa shows strength and the ordinate shows toughness, and that, as shown in a curve a in fig. 3, strength and toughness are contradictory for such a microstructure-regulated material, and generally, the smaller the grain size of the crystal grains, the higher the strength of the material, and the worse the toughness; the larger the grain size of the crystal grain is, the stronger the toughness of the material is, the worse the strength is, for example, the grain size of the coarse crystal CG of the curve A is large, the toughness is good, but the strength is low, the grain size of the nano crystal NG of the curve A is small, the strength is high, but the toughness is poor, and the coarse crystal CG and the nano crystal NG are mixed randomly (CG + NG) directly, a large amount of dislocation and defect can be caused due to the random mixing of the crystal grains with different sizes, and the obtained random mixed crystal grain CG + NG is not high enough in strength, but low in toughness. In this embodiment, after the average grain size of the grains of each sublayer 00 of the first inorganic layer 10 is changed in a gradient manner, the grains of the first inorganic layer 10 are changed from a homogeneous structure to a gradient structure with a gradient change in grain size, and the strength and toughness curves of the material of the first inorganic layer 10 are shown as a curve B in fig. 3, so that the gradient nanocrystalline GNG of the first inorganic layer 10 can achieve a better balance between strength and toughness, and ensure the maintenance of high strength while enhancing toughness.
The packaging structure 000 of the display panel provided in this embodiment improves the structure of the first inorganic layer 10, and the average particle size of the crystal grains of at least two sub-layers 00 of the first inorganic layer 10 is changed in a gradient manner, so that the toughness of the first inorganic layer 10 can be improved, the strength and the toughness of the first inorganic layer 10 can be well balanced, the toughness is enhanced while the high strength can be maintained, and the packaging effect of the packaging structure of the display panel can be improved.
It should be noted that the package structure 000 of the display panel of this embodiment may be used in a thin film encapsulation technology of an organic light emitting display panel, where the package structure 000 includes, but is not limited to, the structures illustrated in fig. 1 and fig. 2, and may also include other structures capable of implementing a thin film encapsulation function, and this embodiment is not limited thereto.
In some optional embodiments, please refer to fig. 4 and fig. 5, fig. 4 is another schematic cross-sectional structure diagram of an encapsulation structure of a display panel provided in an embodiment of the present invention, fig. 5 is another schematic cross-sectional structure diagram of an encapsulation structure of a display panel provided in an embodiment of the present invention, in this embodiment, the first inorganic layer 10 may include at least three sub-layers 00 stacked in a stack, that is, the first inorganic layer 10 further includes a third sub-layer 103, and the second sub-layer 102 is located between the first sub-layer 101 and the third sub-layer 103;
the third seed layer 103 includes a plurality of third grains 1031, and the average grain diameter D3 of the third grains 1031 is different from the average grain diameter D2 of the second grains 1021.
This embodiment explains that the grain size gradient structure of the first inorganic layer 10 may further include a third sublayer 103, wherein the second sublayer 102 is located between the first sublayer 101 and the third sublayer 103, the third sublayer 103 includes a plurality of third grains 1031, an average grain size D3 of the third grains 1031 is different from an average grain size D2 of the second grains 1021, that is, an average grain size D3 of the third grains 1031 may be larger than an average grain size D2 of the second grains 1021 (as shown in fig. 4), an average grain size D3 of the third grains 1031 may also be smaller than an average grain size D2 of the second grains 1021 (as shown in fig. 5), and it is only necessary that the grain sizes of the grains of the adjacent two sublayers 00 are different. The average grain size of the crystal grains of the at least three sublayers 00 of the first inorganic layer 10 is set to be changed in a gradient manner, so that the toughness of the first inorganic layer 10 can be improved, the strength and toughness of the first inorganic layer 10 can be well balanced, the toughness is enhanced, the strength can be maintained high, and the packaging effect of the packaging structure of the display panel can be improved.
It can be understood that fig. 4 and fig. 5 of the present embodiment only exemplarily show the rule that the sizes of the grains of the first sublayer 101, the second sublayer 102, and the third sublayer 103 are changed in a gradient manner, as shown in fig. 4, along the longitudinal direction Z (e.g., the direction in which the first sublayer 101 is vertically directed to the second sublayer 102), the size of the grains of each sublayer 00 is gradually increased, and along the direction in which the organic layer 20 is vertically directed to the first inorganic layer 10, the average grain size of the grains in different sublayers 00 is gradually increased; as shown in fig. 5, along the longitudinal direction Z (e.g., the direction in which the first sub-layer 101 perpendicularly points to the second sub-layer 102), the grain size of each sub-layer 00 is gradually increased and then decreased, and whether the grain size is gradually increased or gradually decreased, or is increased and then decreased, or is decreased and then increased, is within the scope of the present embodiment.
In some alternative embodiments, referring to fig. 6, fig. 6 is a schematic cross-sectional view illustrating another cross-sectional structure of a package structure of a display panel according to an embodiment of the present invention, in which, in at least three sub-layers 00 included in the first inorganic layer 10, an average particle size D1 of the first crystal grain 1011 is larger than an average particle size D2 of the second crystal grain 1021, and an average particle size D3 of the third crystal grain 1031 is larger than an average particle size D2 of the second crystal grain 1021.
This embodiment illustrates that when the first inorganic layer 10 includes at least three sub-layers 00 stacked in layers, of the crystal grain sizes of the three sublayers 00, the average grain diameter D1 of the first crystal grains 1011 is larger than the average grain diameter D2 of the second crystal grains 1021, the average grain diameter D3 of the third crystal grains 1031 is larger than the average grain diameter D2 of the second crystal grains 1021, that is, in the longitudinal direction Z (e.g., the direction in which the first sub-layer 101 is vertically directed to the second sub-layer 102), the gradient structure of the grain sizes of the sub-layers 00 is such that the grains of the middle sub-layer 00 are small, the grains of the upper and lower sub-layers 00 are large, by providing the average grain size of the grains of the at least three sublayers 00 of the first inorganic layer 10 to vary in a gradient, it is possible to improve the toughness of the first inorganic layer 10, to achieve a better balance of strength and toughness of the first inorganic layer 10, the toughness is enhanced, and meanwhile, higher strength can be maintained, so that the packaging effect of the packaging structure of the display panel is favorably improved.
Optionally, referring to fig. 7, fig. 7 is a schematic cross-sectional view of another package structure of a display panel according to an embodiment of the present invention, in this embodiment, when the first inorganic layer 10 includes at least three stacked sublayers 00, of the grain sizes of the three sublayers 00, the average grain size D1 of the first grain 1011 is larger than the average grain size D2 of the second grain 1021, and the average grain size D3 of the third grain 1031 is larger than the average grain size D2 of the second grain, that is, in a longitudinal direction Z (e.g., a direction in which the first sublayer 101 vertically points to the second sublayer 102), a gradient change structure of the grain sizes of the sublayers 00 is that the grains of the middle sublayer 00 are small, and the grains of the upper and lower sublayers 00 are large, and the average grain sizes of the grains of the upper and lower sublayers 00 may be the same, that is, the average grain size D1 of the first grain 1011 is the same as the average grain size D3 of the.
In some alternative embodiments, please continue to refer to fig. 1 to fig. 7, in the package structure 000 of the display panel of the present embodiment, the first inorganic layer 10 includes a plurality of sub-layers 00 stacked one on another, and the average grain sizes of the grains in any two adjacent sub-layers 00 are different. Alternatively, the thickness of each sub-layer 00 may be substantially the same, which is advantageous for controlling the total thickness of the first inorganic layer 10.
This embodiment explains that the first inorganic layer 10 may include a plurality of sublayers 00 stacked in a stack, and along the longitudinal direction Z (e.g., the first sublayer 101 is vertically directed to the second sublayer 102), the variation of the crystal grain size of each sublayer 00 may not be a gradient variation gradually increasing or gradually decreasing or first increasing and then decreasing or first decreasing and then increasing, and only the difference between the average grain sizes of the crystal grains in two adjacent sublayers 00 needs to be satisfied to make the average grain size of the crystal grains of each sublayer 00 of the first inorganic layer 10 present a gradient variation, so as to improve the toughness of the first inorganic layer 10, and achieve a better balance between the strength and the toughness of the first inorganic layer 10.
In some alternative embodiments, referring to fig. 8, fig. 8 is another schematic cross-sectional structure of an encapsulation structure of a display panel according to an embodiment of the present invention, in this embodiment, the average grain size of grains in different sub-layers 00 gradually decreases along a direction in which the organic layer 20 is vertically directed to the first inorganic layer 10, e.g., a longitudinal direction Z in fig. 8.
This embodiment explains that the average grain size of the crystal grains of each sublayer 00 of the first inorganic layer 10 may change in a gradient manner in the longitudinal direction Z, and the average grain size of the crystal grains in different sublayers 00 gradually decreases, that is, the average grain size D1 of the first crystal grains 1011 is larger than the average grain size D2 of the second crystal grains 1021, and the average grain size D2 of the second crystal grains 1021 is larger than the average grain size D3 of the third crystal grains 1031, so that the toughness of the first inorganic layer 10 may also be improved, and a better balance between the strength and the toughness of the first inorganic layer 10 may be achieved.
In some alternative embodiments, please refer to fig. 9 in combination, fig. 9 is a schematic cross-sectional view illustrating an encapsulation structure of a display panel according to an embodiment of the present invention, in which in this embodiment, the encapsulation structure 000 of the display panel further includes a second inorganic layer 30, and the second inorganic layer 30 is located on a side of the organic layer 20 away from the first inorganic layer 10. Alternatively, the structure of the second inorganic layer 30 is the same as that of the first inorganic layer 10.
This embodiment explains that the packaging structure 000 of the display panel can be used as a film package of an organic light emitting display panel, the film packaging structure is formed by stacking inorganic materials and organic materials to realize water and oxygen resistance, in this embodiment, a first inorganic layer 10 and a second inorganic layer 30 are respectively arranged on two adjacent sides of an organic layer 20, the film packaging structure is generally an inorganic + organic + inorganic three-layer or five-layer structure, the organic layer 20 is generally formed by ink jet printing, the thickness of the organic layer 20 can be 4-5 times that of the inorganic layer, the organic layer 20 has a smaller elastic modulus to play a role in relieving bending stress, and the inorganic layer mainly plays a role in blocking water and oxygen. In this embodiment, the inorganic layers are disposed on two opposite sides of the organic layer 20, and the average grain size of the grains of each sublayer 00 of the inorganic layer is changed in a gradient manner, so that the toughness of the first inorganic layer 10 and the second inorganic layer 30 can be improved, the strength and the toughness of the first inorganic layer 10 and the second inorganic layer 30 can be well balanced, and the packaging effect of the packaging structure of the display panel can be improved.
In some alternative embodiments, with continued reference to fig. 1-9, in the present embodiment, the first inorganic layer 10 is made of a material including any one or both of silicon nitride, silicon dioxide and silicon oxynitride, and the grain size of the grains is in a range of 10nm to 50 nm.
In this embodiment, it is explained that the material for forming the first inorganic layer 10 includes any one or both of silicon nitride, silicon dioxide and silicon oxynitride, and the grain size of the grains is in the range of 10nm to 50nm, but the material is not limited to the above-mentioned material, and other inorganic materials can be used, so long as the first inorganic layer 10 including the plurality of sub-layers 00 can be formed by chemical vapor deposition.
In some alternative embodiments, please refer to fig. 1 to 9 and fig. 10 to 13 in combination, fig. 10 is a flowchart of a method for manufacturing a package structure of a display panel according to an embodiment of the present invention, where the method for manufacturing a package structure 000 of a display panel according to the above embodiments includes:
s01: providing an array substrate 40;
s02: depositing a first inorganic material on the array substrate 40 at a first deposition rate, wherein the first inorganic material may include any one or both of silicon nitride, silicon dioxide, and silicon oxynitride, to form a first sub-layer 101, and the formed first sub-layer 101 includes a plurality of first grains 1011, as shown in fig. 11, where fig. 11 is a schematic structural view after the first sub-layer 101 is formed on the array substrate 40;
s03: depositing a second inorganic material on the first sub-layer 101 at a second deposition rate, wherein the second inorganic material may include any one or both of silicon nitride, silicon dioxide, and silicon oxynitride, to form a second sub-layer 102, and the second sub-layer 102 includes a plurality of second grains 1021, as shown in fig. 12, where fig. 12 is a schematic structural diagram after the second sub-layer 102 is formed on the first sub-layer 101;
wherein the first deposition rate is different from the second deposition rate, and the average grain size D1 of the first grains 1011 is different from the average grain size D2 of the second grains 1021; the first sublayer 101 and the second sublayer 102 form the first inorganic layer 10;
s04: as shown in fig. 13, the organic layer 20 is formed on the second sub-layer 102, and fig. 13 is a schematic structural view after the organic layer 20 is formed on the second sub-layer 102.
This embodiment illustrates a method for manufacturing an encapsulation structure 000 of a display panel, first providing an array substrate 40 as a carrier substrate of the encapsulation structure, depositing a first inorganic layer 10 on the array substrate 40 by using a chemical vapor deposition method, that is, depositing a first inorganic material on the array substrate 40 by using a first deposition speed, wherein the first inorganic material may include any one or both of silicon nitride, silicon dioxide and silicon oxynitride, and forming a first sub-layer 101 including a plurality of first crystal grains 1011; a second inorganic material, which may comprise any one or both of silicon nitride, silicon dioxide, silicon oxynitride, or the like, is then deposited on the first sub-layer 101 using a second deposition rate, forming a second sub-layer 102 comprising a plurality of second grains 1021. Since the first deposition rate is different from the second deposition rate, the average grain size D1 of the first grains 1011 of the first sublayer 101 is formed to be different from the average grain size D2 of the second grains 1021 of the second sublayer 102; the organic layer 20 may then be formed on the second sub-layer 102. In the package structure 000 of the display panel manufactured by the manufacturing method of the embodiment, the average grain size of the grains of at least two sublayers 00 of the first inorganic layer 10 is changed in a gradient manner, so that the toughness of the first inorganic layer 10 can be improved, the strength and toughness of the first inorganic layer 10 can be well balanced, the high strength can be maintained while the toughness is enhanced, and the package effect of the package structure of the display panel can be improved.
In some alternative embodiments, with continued reference to fig. 10-13, in the present embodiment, the first deposition rate for forming the first sub-layer 101 is greater than the second deposition rate for forming the second sub-layer 102, such that the average grain size D1 of the first grains 1011 is greater than the average grain size D2 of the second grains 1021, and optionally, the first deposition rate for forming the first sub-layer 101 is less than the second deposition rate for forming the second sub-layer 102, such that the average grain size D1 of the first grains 1011 is less than the average grain size D2 of the second grains 1021.
This embodiment explains that in the chemical vapor deposition method, the faster the deposition speed is, the more severe the surface reaction is, and the larger the grain size obtained by deposition is, so that in this embodiment, the first deposition speed for forming the first sublayer 101 is set to be greater than the second deposition speed for forming the second sublayer 102, so that the average grain size D1 of the first grain 1011 can be greater than the average grain size D2 of the second grain 1021, whereas, the first deposition speed for forming the first sublayer 101 is smaller than the second deposition speed for forming the second sublayer 102, so that the average grain size D1 of the first grain 1011 can be smaller than the average grain size D2 of the second grain 1021, and further, the deposition speed can be controlled so that the average grain sizes of the grains of at least two sublayers 00 of the first inorganic layer 10 are in a gradient.
In some optional embodiments, please refer to fig. 1 to 9 and fig. 14 in combination, fig. 14 is a flowchart of a method for manufacturing an encapsulation structure of a display panel according to another embodiment of the present invention, the method for manufacturing an encapsulation structure 000 of a display panel according to the above embodiment includes:
s11: providing an array substrate 40;
s12: depositing a first inorganic material on the array substrate 40 at a first deposition rate, wherein the first inorganic material may include any one or both of silicon nitride, silicon dioxide, and silicon oxynitride, to form a first sub-layer 101, and the first sub-layer 101 includes a plurality of first crystal grains 1011, as shown in fig. 11;
s13: depositing a second inorganic material on the first sub-layer 101 at a second deposition rate, wherein the second inorganic material may include any one or both of silicon nitride, silicon dioxide, and silicon oxynitride, to form a second sub-layer 102, and the second sub-layer 102 includes a plurality of second grains 1021, as shown in fig. 12;
s14: depositing a third inorganic material on the second sub-layer 102 at a third deposition rate, wherein the third inorganic material may include any one or both of silicon nitride, silicon dioxide, and silicon oxynitride, forming a third sub-layer 103, the formed third sub-layer 103 including a plurality of third grains 1031; wherein the first deposition rate is different from the second deposition rate, the third deposition rate is different from the second deposition rate, the average particle size D1 of the first grains 1011 is different from the average particle size D2 of the second grains 1021, the average particle size D3 of the third grains 1031 is different from the average particle size D2 of the second grains 1021, and the first sublayer 101, the second sublayer 102, and the third sublayer 103 form the first inorganic layer 10, as shown in fig. 15, fig. 15 is a schematic structural view after the third sublayer 103 is formed on the second sublayer 102.
S15: as shown in fig. 16, the organic layer 20 is formed on the third sub-layer 103, and fig. 16 is a schematic structural view after the organic layer 20 is formed on the third sub-layer 103.
This embodiment illustrates a method for manufacturing an encapsulation structure 000 of a display panel, first providing an array substrate 40 as a carrier substrate of the encapsulation structure, depositing a first inorganic layer 10 on the array substrate 40 by using a chemical vapor deposition method, that is, depositing a first inorganic material on the array substrate 40 by using a first deposition speed, wherein the first inorganic material may include any one or both of silicon nitride, silicon dioxide and silicon oxynitride, and forming a first sub-layer 101 including a plurality of first crystal grains 1011; then depositing a second inorganic material on the first sub-layer 101 at a second deposition rate, wherein the second inorganic material may include any one or both of silicon nitride, silicon dioxide, and silicon oxynitride, and the second sub-layer 102 is formed to include a plurality of second grains 1021; a third inorganic material, which may comprise any one or both of silicon nitride, silicon dioxide, silicon oxynitride, or a combination thereof, is then deposited on the second sub-layer 102 using a third deposition rate, forming a third sub-layer 103 comprising a plurality of third grains 1031. Since the first deposition rate is different from the second deposition rate, and the third deposition rate is different from the second deposition rate, the average particle size D1 of the first grains 1011 of the first sub-layer 101 is formed to be different from the average particle size D2 of the second grains 1021 of the second sub-layer 102, and the average particle size D3 of the third grains 1031 of the third sub-layer 103 is formed to be different from the average particle size D2 of the second grains 1021 of the second sub-layer 102; the organic layer 20 may then be formed on the third sub-layer 103. In the package structure 000 of the display panel manufactured by the manufacturing method of the embodiment, the average grain size of the grains of the sub-layers 00 of the first inorganic layer 10 is changed in a gradient manner, so that the toughness of the first inorganic layer 10 can be improved, the strength and the toughness of the first inorganic layer 10 can be well balanced, the high strength can be maintained while the toughness is enhanced, and the package effect of the package structure of the display panel can be improved.
In some alternative embodiments, with continuing reference to fig. 11-12 and 14-16, in the present embodiment, the first deposition rate for forming the first sub-layer 101 is greater than the second deposition rate for forming the second sub-layer 102, the second deposition rate for forming the second sub-layer 102 is greater than the third deposition rate for forming the third sub-layer 103, the average grain size D1 of the first grains 1011 of the first sub-layer 101 is greater than the average grain size D2 of the second grains 1021 of the second sub-layer 102, and the average grain size D2 of the second grains 1021 of the second sub-layer 102 is greater than the average grain size D3 of the third grains 1031 of the third sub-layer 103.
This embodiment explains that in the chemical vapor deposition method, the faster the deposition rate is, the more severe the surface reaction is, and the larger the grain size obtained by deposition is, so that in this embodiment, the first deposition rate for forming the first sublayer 101 is set to be greater than the second deposition rate for forming the second sublayer 102, the second deposition rate for forming the second sublayer 102 is set to be greater than the third deposition rate for forming the third sublayer 103, the average grain size D1 of the first grain 1011 can be made greater than the average grain size D2 of the second grain 1021, the average grain size D2 of the second grain 1021 is greater than the average grain size D3 of the third grain 1031, and further, the deposition rate can be controlled so that the average grain sizes of the grains of the sublayers 00 of the first inorganic layer 10 are changed in a gradient manner.
Optionally, the first inorganic material, the second inorganic material and the third inorganic material may be silicon nitride Si3N4(ii) a Silicon nitride Si3N4From ammonia NH3And monosilane SiH4Reacting in a reaction cavity device to obtain the product;
process for forming first inorganic layer 10 by chemical vapor depositionIn (1), NH can be adjusted by adjusting ammonia3And monosilane SiH4Obtaining different first deposition speed and second deposition speed according to at least one of the volume ratio of (A), the temperature of the reaction cavity equipment, the cavity pressure of the reaction cavity equipment or the power of the reaction cavity equipment, optionally, the higher the temperature of the reaction cavity equipment is, the higher the cavity pressure of the reaction cavity equipment is, and the ammonia NH is3And monosilane SiH4The smaller the volume ratio of (A) and the larger the radio frequency power of the reaction cavity device, the faster the deposition speed of the deposition reaction.
In some alternative embodiments, referring to fig. 17, fig. 17 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present invention, in which a display panel 111 according to the embodiment includes an array substrate 40, an organic light emitting layer 50, and an encapsulation structure 000 according to the above embodiment of the present invention, the organic light emitting layer 50 is located on one side of the array substrate 40, and the encapsulation structure 000 is located on one side of the organic light emitting layer 50 away from the array substrate 40. The embodiment of fig. 17 is only an example of a mobile phone, and the display panel 111 is described, it is understood that the display panel 111 provided in the embodiment of the present invention may be a display panel 111 with other display functions, such as a computer, a television, and a vehicle-mounted display device, and the present invention is not limited thereto. The display panel 111 provided in the embodiment of the present invention has the beneficial effect of the package structure 000 provided in the embodiment of the present invention, and specific reference may be specifically made to the specific description of the package structure 000 in the above embodiments, which is not described herein again.
According to the embodiment, the packaging structure of the display panel, the preparation method of the packaging structure of the display panel and the display panel at least achieve the following beneficial effects:
the packaging structure of the display panel provided by the invention can be a thin film packaging structure and is used for packaging the flexible display panel. The packaging structure at least comprises a first inorganic layer and an organic layer which are arranged in a stacked mode, wherein the first inorganic layer can be a structure at least comprising two sublayers arranged in the stacked mode, the first sublayer comprises a plurality of first crystal grains, the second sublayer comprises a plurality of second crystal grains, the average grain diameter of the first crystal grains is different from that of the second crystal grains, namely in the crystal grains of each sublayer of the first inorganic layer, a design that the average grain diameter is changed in a gradient mode is used, for example, in the direction that the first sublayer vertically points to the second sublayer, through chemical vapor deposition distribution of the gradient structure, strain gradient can be induced, uniaxial stress is converted into multiaxial stress, so that stress concentration of the first inorganic layer is reduced, the overall toughness of the material of the first inorganic layer is improved, and dislocation accumulation and interaction among the crystal grains occur in the first inorganic layer due to different average grain diameters, the first inorganic layer of the gradient structure comprising the first sub-layer and the second sub-layer has additional strain hardening capacity, namely, higher shaping, and can simultaneously improve the physical property and the chemical property of the packaging structure. According to the packaging structure of the display panel, the structure of the first inorganic layer is improved, the average grain diameter of the crystal grains of at least two sub-layers of the first inorganic layer is in gradient change, the toughness of the first inorganic layer can be improved, the strength and the toughness of the first inorganic layer are well balanced, the toughness is enhanced, the high strength can be maintained, and the packaging effect of the packaging structure of the display panel is improved.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (17)
1. The packaging structure of a display panel is characterized by at least comprising a first inorganic layer and an organic layer which are stacked;
the first inorganic layer at least comprises two sublayers arranged in a laminated way, and each sublayer comprises a plurality of crystal grains; the two sublayers are a first sublayer and a second sublayer, the first sublayer comprises a plurality of first crystal grains, and the second sublayer comprises a plurality of second crystal grains;
the average particle diameter of the first crystal grains is different from the average particle diameter of the second crystal grains.
2. The encapsulation structure of the display panel according to claim 1, wherein the first inorganic layer further comprises a third sublayer, the second sublayer being located between the first sublayer and the third sublayer;
the third sublayer includes a plurality of third crystal grains having an average grain size different from that of the second crystal grains.
3. The package structure of the display panel according to claim 2, wherein an average grain size of the first crystal grain is larger than an average grain size of the second crystal grain, and an average grain size of the third crystal grain is larger than an average grain size of the second crystal grain.
4. The package structure of a display panel according to claim 3, wherein an average grain size of the first crystal grain is the same as an average grain size of the third crystal grain.
5. The package structure of display panel according to claim 1,
the first inorganic layer comprises a plurality of sub-layers which are arranged in a laminated mode, and the average grain size of the crystal grains in any two adjacent sub-layers is different.
6. The package structure of display panel according to claim 5,
the average grain size of the grains in the different sub-layers gradually increases along the direction in which the organic layer is vertically directed to the first inorganic layer.
7. The package structure of display panel according to claim 5,
the average grain size of the grains in the different sub-layers gradually decreases in a direction in which the organic layer is directed perpendicularly to the first inorganic layer.
8. The encapsulation structure of the display panel according to claim 1, further comprising a second inorganic layer on a side of the organic layer away from the first inorganic layer.
9. The package structure of the display panel according to claim 8, wherein the second inorganic layer has the same structure as the first inorganic layer.
10. The package structure of claim 1, wherein the first inorganic layer is made of a material comprising one or both of silicon nitride, silicon dioxide and silicon oxynitride, and the grain size of the grains is in a range of 10nm to 50 nm.
11. A method for preparing a package structure of a display panel is characterized in that,
providing an array substrate;
depositing a first inorganic material on the array substrate at a first deposition speed to form a first sub-layer, wherein the first sub-layer comprises a plurality of first crystal grains;
depositing a second inorganic material on the first sublayer at a second deposition rate to form a second sublayer, wherein the second sublayer comprises a plurality of second grains;
wherein the first deposition rate is different from the second deposition rate, and the average grain size of the first crystal grains is different from the average grain size of the second crystal grains;
an organic layer is formed on the second sublayer.
12. The method according to claim 11, wherein the first deposition rate is greater than the second deposition rate, and an average grain size of the first grains is greater than an average grain size of the second grains.
13. The method of claim 11, further comprising, before forming the organic layer on the second sub-layer:
depositing a third inorganic material on the second sublayer at a third deposition rate to form a third sublayer, wherein the third sublayer comprises a plurality of third grains; wherein the third deposition rate is different from the second deposition rate, and the average grain size of the third crystal grains is different from the average grain size of the second crystal grains.
14. The method according to claim 13, wherein the first deposition rate is greater than the second deposition rate, the second deposition rate is greater than the third deposition rate, the average grain size of the first grains is greater than the average grain size of the second grains, and the average grain size of the second grains is greater than the average grain size of the third grains.
15. The method according to claim 11, wherein the first inorganic material and the second inorganic material comprise any one or both of silicon nitride, silicon dioxide, and silicon oxynitride.
16. The method according to claim 15, wherein the first inorganic material comprises silicon nitride; the silicon nitride is prepared by reacting ammonia gas and monosilane in reaction cavity equipment;
and obtaining different first deposition speed and second deposition speed by adjusting at least one condition of the volume ratio of the ammonia gas to the monosilane, the temperature of the reaction cavity equipment, the cavity pressure of the reaction cavity equipment or the power of the reaction cavity equipment.
17. A display panel comprising an array substrate, an organic light emitting layer on one side of the array substrate, and the encapsulation structure of any one of claims 1 to 10 on a side of the organic light emitting layer away from the array substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110118794.1A CN112928227B (en) | 2021-01-28 | 2021-01-28 | Display panel packaging structure, preparation method thereof and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110118794.1A CN112928227B (en) | 2021-01-28 | 2021-01-28 | Display panel packaging structure, preparation method thereof and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112928227A true CN112928227A (en) | 2021-06-08 |
| CN112928227B CN112928227B (en) | 2022-10-18 |
Family
ID=76168034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110118794.1A Active CN112928227B (en) | 2021-01-28 | 2021-01-28 | Display panel packaging structure, preparation method thereof and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112928227B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW546999B (en) * | 2000-09-25 | 2003-08-11 | Ibiden Co Ltd | Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board |
| JP2009033120A (en) * | 2007-06-22 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Method of manufacturing display device |
| CN106449709A (en) * | 2016-10-31 | 2017-02-22 | 上海天马微电子有限公司 | Flexible organic electroluminescent display and electronic equipment |
| CN108388379A (en) * | 2018-03-15 | 2018-08-10 | 京东方科技集团股份有限公司 | Touch panel, its production method and display device |
| CN110797465A (en) * | 2018-08-01 | 2020-02-14 | 深圳Tcl新技术有限公司 | Quantum dot light-emitting diode, preparation method thereof and quantum dot liquid crystal display module |
-
2021
- 2021-01-28 CN CN202110118794.1A patent/CN112928227B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW546999B (en) * | 2000-09-25 | 2003-08-11 | Ibiden Co Ltd | Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board |
| JP2009033120A (en) * | 2007-06-22 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Method of manufacturing display device |
| CN106449709A (en) * | 2016-10-31 | 2017-02-22 | 上海天马微电子有限公司 | Flexible organic electroluminescent display and electronic equipment |
| CN108388379A (en) * | 2018-03-15 | 2018-08-10 | 京东方科技集团股份有限公司 | Touch panel, its production method and display device |
| CN110797465A (en) * | 2018-08-01 | 2020-02-14 | 深圳Tcl新技术有限公司 | Quantum dot light-emitting diode, preparation method thereof and quantum dot liquid crystal display module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112928227B (en) | 2022-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Fabrication of (In, Ga) As quantum-dot chains on GaAs (100) | |
| JP6508245B2 (en) | Laminate, gas barrier film, and laminate manufacturing apparatus | |
| JP5171909B2 (en) | Method for forming fine pattern | |
| US20080092814A1 (en) | Systems and methods for selective deposition of graded materials on continuously fed objects | |
| US8252699B2 (en) | Composite removable hardmask | |
| US10961622B2 (en) | Gas barrier film and method of manufacturing the same | |
| KR101284958B1 (en) | A multi-layer plastic substrate having good dimensional stability and gas barrier properties and method for preparing the same | |
| CN112928227B (en) | Display panel packaging structure, preparation method thereof and display panel | |
| KR20170080487A (en) | Adhesive-less multi-layered flexible film having moisture and gas barrier properties and their preparation method | |
| US20240065075A1 (en) | Package structure, display panel, and manufacturing method of display panel | |
| CN112760615B (en) | Silicon dioxide film and low-temperature preparation method thereof | |
| CN109928357A (en) | A kind of MEMS bridge structure and forming method thereof | |
| KR20190127086A (en) | Gas barrier film and method for manufacturing the same | |
| KR20200075796A (en) | Thin film encapsulation for organic photonic and electronic devices and method for fabricating the same | |
| CN113748531B (en) | Organic light emitting diode display with color correction component | |
| KR101877402B1 (en) | Passivation film for organic electronic devices and Method for depositing the same | |
| CN115377229A (en) | Silicon dioxide passivation film and manufacturing method thereof | |
| KR102159993B1 (en) | Thin film encapsulation for organic photonic and electronic devices and method for fabricating the same | |
| CN107946420A (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| WO2009048056A1 (en) | Compound semiconductor epitaxial wafer and process for producing the same | |
| CN115261978B (en) | Method for preparing AB-stacked multilayer boron nitride film with ferroelectricity | |
| KR101970209B1 (en) | Nanostructure device and method for manufacturing nanostructures | |
| WO2021098091A1 (en) | Flexible oled device encapsulation structure and encapsulation method therefor | |
| Kamins et al. | Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si (001) substrates | |
| US11651960B2 (en) | Method for forming amorphous silicon thin film, method for manufacturing semiconductor device including same, and semiconductor manufactured thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |