CN112928104B - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
CN112928104B
CN112928104B CN202110130015.XA CN202110130015A CN112928104B CN 112928104 B CN112928104 B CN 112928104B CN 202110130015 A CN202110130015 A CN 202110130015A CN 112928104 B CN112928104 B CN 112928104B
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micro led
led chip
sub
pad
display panel
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CN112928104A (en
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符鞠建
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Xiamen Tianma Microelectronics Co Ltd
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Xiamen Tianma Microelectronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The embodiment of the invention discloses a display panel and a display device, wherein the display panel comprises: the array substrate comprises a plurality of sub-pixel areas; a binding pad is arranged in the sub-pixel area; the binding pad of the sub-pixel region comprises an anode pad, a cathode pad and a plurality of auxiliary pads; the Micro LED chip array comprises a plurality of Micro LED chips; the Micro LED chip comprises at least one Micro LED chip group; the Micro LED chip group comprises a plurality of Micro LED sub-chips; all Micro LED sub-chips of the same Micro LED chip set are connected in series; all the Micro LED sub chip groups are connected in parallel; the first end of the first repairing wire is electrically connected with the positive electrode bonding pad or the negative electrode bonding pad, and the second end of the first repairing wire is overlapped with the auxiliary bonding pad in an insulating mode; according to the invention, when the Micro LED sub-chip in the Micro LED chip array is in failure to cause abnormal display, the repairing can be carried out through the first repairing wire.

Description

Display panel and display device
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel and a display device.
Background
With the widespread use of electronic products such as mobile phones, computers, televisions, etc., in various aspects of life. Electronic display panels such as display panels are widely used. Micro LED (Micro light emitting diode) technology has attracted attention of a wide range of researchers due to its ultra-high display quality and stability, which can support higher brightness, high dynamic range, and wide color gamut.
Disclosure of Invention
The embodiment of the invention provides a display panel and a display device, which are used for repairing a Micro LED sub-chip in a Micro LED chip array through a first repairing line when the display is abnormal due to the fault. The problem of influencing the display.
In a first aspect, an embodiment of the present invention provides a display panel, including:
an array substrate including a plurality of sub-pixel regions; a binding pad is arranged in the sub-pixel region; the binding pad of the sub-pixel region comprises an anode pad, a cathode pad and a plurality of auxiliary pads;
a Micro LED chip array; the Micro LED chip array comprises a plurality of Micro LED chips; the Micro LED chip comprises at least one Micro LED chip group; the Micro LED chip group comprises a plurality of Micro LED sub chips; all the Micro LED sub-chips of the same Micro LED chip set are connected in series; all the Micro LED sub chip groups are connected in parallel;
the repair structure further comprises a first repair wire; a first end of the first repairing wire is electrically connected with the positive electrode bonding pad or the negative electrode bonding pad, and a second end of the first repairing wire is in insulation overlapping with the auxiliary bonding pad;
the Micro LED chips are correspondingly bound with the sub-pixel areas one by one; and all the Micro LED sub-chips of the same Micro LED chip group are connected in series through the auxiliary bonding pad.
In a second aspect, an embodiment of the present invention further provides a display device, including any one of the display panels.
According to the display panel provided by the embodiment of the invention, the first end of the first repairing wire is electrically connected with the positive electrode bonding pad or the negative electrode bonding pad, the second end of the first repairing wire is overlapped with the auxiliary bonding pad in an insulating manner, and the second end of the first repairing wire can be electrically connected with the auxiliary bonding pad in a laser mode when a certain Micro LED sub-chip of the Micro LED chip fails. Therefore, the Micro LED sub-chips with faults can be in short circuit, so that other Micro LED sub-chips of the Micro LED chip group where the Micro LED sub-chips with faults are located can be normally lightened, and the display panel can normally display.
Drawings
To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the technical solutions in the prior art, and it is obvious that the drawings in the following description, although being some specific embodiments of the present invention, can be extended and extended to other structures and drawings by those skilled in the art according to the basic concepts of the device structure, the driving method and the manufacturing method disclosed and suggested by the various embodiments of the present invention, without making sure that these should be within the scope of the claims of the present invention.
Fig. 1 is a schematic top view of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of the laser front in the direction A1a2 in fig. 1;
fig. 3 is a schematic cross-sectional view taken along a direction A1a2 in fig. 1 after laser irradiation;
fig. 4 is another schematic cross-sectional view of a laser front in the direction A1a2 in fig. 1;
FIG. 5 is a schematic cross-sectional view taken along the direction A1A2 in FIG. 1 after laser irradiation;
FIG. 6 is a schematic cross-sectional view taken along line B1B2 in FIG. 1;
FIG. 7 is a schematic diagram of a top view structure of a Micro LED chip according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a top view structure of another Micro LED chip according to an embodiment of the present invention;
FIG. 9 is a sectional view taken along section line C1C2 in FIG. 8;
FIG. 10 is a sectional view taken along section line D1D2 in FIG. 8;
FIG. 11 is a schematic diagram of a top view structure of another Micro LED chip according to an embodiment of the present invention;
fig. 12 is a schematic cross-sectional view of the laser front in the direction of E1E2 in fig. 11;
fig. 13 is a schematic cross-sectional view taken along direction E1E2 in fig. 11 after laser irradiation;
fig. 14 is a schematic cross-sectional view of a laser front in the direction of E1E2 in fig. 11;
FIG. 15 is a schematic cross-sectional view taken along direction E1E2 in FIG. 11 after laser irradiation;
FIG. 16 is a schematic cross-sectional view taken along line F1F2 in FIG. 11;
FIG. 17 is a schematic diagram of a top view structure of another Micro LED chip according to an embodiment of the present invention;
fig. 18 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below by way of specific embodiments in conjunction with the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.
Fig. 1 is a schematic top view of a display panel according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional view of a laser front edge along a direction A1a2 in fig. 1, and fig. 3 is a schematic cross-sectional view of a laser rear edge along a direction A1a2 in fig. 1. As shown in fig. 1 to 3, includes: an array substrate 10 and an array of Micro LED chips (not shown). The array substrate 10 includes a plurality of sub-pixel regions 11. The sub-pixel region 11 is provided with a bonding pad 12. The bonding pad 12 of the sub-pixel region 11 includes a positive electrode pad 121, a negative electrode pad 122, and a plurality of auxiliary pads 123. The Micro LED chip array comprises a plurality of Micro LED chips 21, the Micro LED chips 21 comprise at least one Micro LED chipset 211, and the Micro LED chipset 211 comprises a plurality of Micro LED sub-chips 2111. The Micro LED sub-chips 2111 of the same Micro LED chipset 211 are connected in series, and the Micro LED sub-chipsets 211 are connected in parallel. The plurality of Micro LED chips 21 are correspondingly bound with the plurality of sub-pixel areas 11 one by one; the Micro LED sub-chips 2111 of the same Micro LED chipset 211 are connected in series through the auxiliary pad 123. The exemplary arrangement of Micro LED chips 21 in fig. 1 includes two Micro LED chipset 211, the Micro LED chipset 211 including two Micro LED sub-chips 2111.
Since each sub-pixel region is further provided with a pixel driving circuit for driving the Micro LED chip, the Micro LED chip requires a large driving current, which may increase power consumption of the pixel driving circuit for driving the Micro LED chip in the display panel. To solve the above problem, in the embodiment of the present invention, the Micro LED chip 21 may include at least one Micro LED chip set 211. The Micro LED chipset 211 includes a plurality of Micro LED sub-chips 2111, and the Micro LED sub-chips 2111 of the same Micro LED chipset 211 are connected in series. Since the Micro LED sub-chips 2111 of the same Micro LED chipset 211 are connected in series, the driving of the pixel driving circuit is reduced under the condition of realizing the same light emitting brightness, and the power consumption of the pixel driving circuit is also reduced correspondingly. In order to implement redundancy, the Micro LED chip 21 according to the embodiment of the present invention may include a plurality of Micro LED chip sets 211, and the Micro LED chip sets 211 in the same Micro LED chip 21 are connected in parallel. If one Micro LED chipset 211 in the Micro LED chip 21 is damaged, the display can be realized through the other Micro LED chipsets 211 in the Micro LED chip 21.
In addition, the embodiment of the present invention further includes a first repair line 13. The first end 131 of the first repair wire 13 is electrically connected to the positive electrode pad 121 or the negative electrode pad 122, and the second end 132 of the first repair wire 13 is overlapped with the auxiliary pad 123 in an insulating manner.
Referring to fig. 2, an example will be described in which the first end 131 of the first repair wire 13 is electrically connected to the positive electrode pad 121, and the second end 132 of the first repair wire 13 is overlapped with the auxiliary pad 123 in an insulating manner. If the Micro LED sub-chip 2111 of one of the Micro LED chipsets 211 fails, the display of another Micro LED sub-chip 2111 of the same Micro LED chipset 211 connected in series with the Micro LED sub-chip will be affected. In the embodiment of the invention, the first repairing line 13 is additionally arranged, when a Micro LED sub-chip 2111 of the Micro LED chipset 211 breaks down, laser is performed on the second end 132 of the first repairing line 13, so that the first repairing line is electrically connected with the auxiliary bonding pad 123 (see fig. 3), the potential of the positive bonding pad is transmitted to another Micro LED sub-chip 2111, which is in series connection with the Micro LED sub-chip 2111 and is located in the same Micro LED chipset 211 and has a short circuit, through the second end 132 of the first repairing line 13, and normal display of the Micro LED sub-chip 2111 is ensured not to happen, so that the display failure of the Micro LED chip can be effectively reduced.
Optionally, the array substrate includes a substrate; the first repairing wire is positioned on one side of the binding bonding pad facing the substrate; a first insulating layer is arranged between the binding bonding pad and the first repairing wire; the first end of the first repairing wire is electrically connected with the positive electrode bonding pad or the negative electrode bonding pad through the through hole.
For example, as shown in fig. 2, it is exemplified that the first end 131 of the first repair line 13 is electrically connected to the positive electrode pad 121 through a via. The first repair line 13 is located on a side of the bonding pad 12 (e.g., the positive electrode pad 121 and the auxiliary pad 123) facing the substrate 100, and since the direct contact between the first repair line 13 and the bonding pad 12 may cause a short between the positive electrode pad 121 and the auxiliary pad 123 or between the negative electrode pad 122 and the auxiliary pad, a first insulating layer 101 is provided between the bonding pad 12 and the first repair line 13 to insulate and separate the bonding pad 12 from the first repair line 13. Referring to fig. 2, a first end 131 of the first repair line 13 is electrically connected to the positive pad 121 through a via hole, and a second end 132 of the first repair line 13 is overlapped with the auxiliary pad 123 in an insulating manner. When the Micro LED sub-chip 2111 fails, referring to fig. 3, the second end 132 of the first repair wire 13 and the auxiliary pad 123 may be electrically connected by laser, so as to ensure the display effect.
Fig. 4 is a schematic cross-sectional view of the laser front edge along the direction A1a2 in fig. 1, and fig. 5 is a schematic cross-sectional view of the laser rear edge along the direction A1a2 in fig. 1. Fig. 6 is a schematic cross-sectional view taken along the direction B1B2 in fig. 1. As shown in fig. 4, the array substrate includes a substrate 100, and the first repair line 13 is located at a side of the bonding pad 12 (e.g., the positive electrode pad 121 and the auxiliary pad 123) facing away from the substrate 100. A first insulating layer 101 is arranged between the bonding pad 12 and the first repair line 13; the first end 131 of the first repair line 13 is electrically connected to the positive electrode pad 121 through a via hole. The second end 132 of the first repair line 13 is insulated from and overlaps the auxiliary pad 123. When the Micro LED sub-chip 2111 fails, referring to fig. 5, the second end 132 of the first repair wire 13 and the auxiliary pad 123 may be electrically connected by laser, so as to ensure the display effect. Referring to fig. 6, the Micro LED sub-chip 2111 is bonded to the positive pad 121 and the auxiliary pad 123 in a region where the first repair line 13 is not disposed.
Referring to fig. 4 and 5, in an overlapping area between the first repair line 13 and the Micro LED chip, the second insulating layer 102 is disposed between the first repair line 13 and the Micro LED chip, so that when the Micro LED sub-chip 2111 has no fault, the first repair line 13 can be prevented from short-circuiting the Micro LED sub-chip 2111.
Optionally, the first repair line does not overlap with the Micro LED chip.
Fig. 7 is a schematic top view structure diagram of a Micro LED chip according to an embodiment of the present invention, and considering the flatness of the overlapping area between the first repair line 13 and the Micro LED chip, as shown in fig. 7, the first repair line 13 is not overlapped with the Micro LED chip, that is, is not overlapped with each Micro LED sub-chip 2111, so that the phenomenon that the bonding area is uneven when the Micro LED chip is bonded can be avoided, and the bonding effect between the bonding pad and the Micro LED chip can be avoided from being affected.
Optionally, the sub-pixel region further includes a pixel driving circuit; the first repairing line and any metal layer of the pixel driving circuit are arranged in the same layer.
The first repairing line and any metal layer in the pixel driving circuit can be arranged in the same layer, so that the complexity of the manufacturing process is effectively reduced, the cost is saved, and the use of the first repairing line is not influenced.
Optionally, a distance between adjacent bonding pads in the sub-pixel region is greater than a laser area of laser.
With continued reference to fig. 7, if the distance between the adjacent bonding pads is too small, when the second end 132 of the first repair wire 13 is electrically connected to the auxiliary bonding pad 123 by using a laser method, if an error operation performs laser on the adjacent bonding pads, the adjacent bonding pads may be short-circuited, thereby affecting the display. Therefore, the distance between the adjacent binding pads is larger than the laser area of the laser, the laser area of the laser is generally 3-5 mu m, namely the distance between the adjacent binding pads is larger than 5 mu m, and the situation that the adjacent binding pads are short-circuited by mistake in the laser process can be effectively avoided.
Optionally, the Micro LED chip includes an electrode layer; the electrode layer comprises a positive electrode, a negative electrode and a plurality of dummy electrodes; all Micro LED sub-chips of the same Micro LED chip group are connected in series through the dummy electrode. The dummy electrodes are bound with the auxiliary bonding pads in a one-to-one correspondence mode, the Micro LED chip is bound with the positive bonding pad through the positive electrode, and the Micro LED chip is bound with the negative bonding pad through the negative electrode.
It should be noted that, in the embodiment of the present invention, each Micro LED sub-chip may be bound on the array substrate, or each Micro LED chip may be bound on the array substrate after a plurality of Micro LED sub-chips are manufactured into the Micro LED chip. For the latter, see, e.g., fig. 8, a Micro LED core in an embodiment of the present invention may include an electrode layer. The Micro LED chip comprises an electrode layer; the electrode layer includes a positive electrode 231, a negative electrode 232, and a plurality of dummy electrodes 233. The Micro LED sub-chips 2111 of the same Micro LED chip group 211 are connected in series through the dummy electrode 233. Fig. 9 is a sectional view taken along line C1C2 in fig. 8, and fig. 10 is a sectional view taken along line D1D2 in fig. 8. The dummy electrodes 233 are bound to the auxiliary pads 123 in a one-to-one correspondence, the Micro LED chip 21 is bound to the positive pad 121 through the positive electrode 231, and the Micro LED chip 21 is bound to the negative pad 122 through the negative electrode 232.
Optionally, the Micro LED chip further includes a second repair line; the first end of the second repairing wire is electrically connected with the positive electrode or the negative electrode, and the second end of the second repairing wire is overlapped with the dummy electrode in an insulating mode.
Fig. 11 is a schematic top view of another Micro LED chip according to an embodiment of the present invention, fig. 12 is a schematic cross-sectional view taken along the direction E1E2 in fig. 11 before laser emission, and fig. 13 is a schematic cross-sectional view taken along the direction E1E2 in fig. 11 after laser emission. As shown in fig. 11 and 12, the first end 141 of the second repair line 14 is electrically connected to the positive electrode 231, and the second end 142 of the second repair line 14 is insulated from and overlapped with the dummy electrode 233. If the Micro LED sub-chip 2111 of one of the Micro LED chipsets 211 fails, the display of another Micro LED sub-chip 2111 of the same Micro LED chipset 211 connected in series with the Micro LED sub-chip will be affected. Referring to fig. 13, the second repair line 14 is additionally provided in the embodiment of the present invention, when one Micro LED sub-chip 2111 fails, laser is performed on the second end 142 of the second repair line 14, so that the second end 142 of the second repair line is electrically connected to the dummy electrode 233, and the potential of the anode 231 is transmitted to the dummy electrode 233 through the second end 142 of the second repair line 14, so that the Micro LED sub-chip 2111 connected in series with the failed Micro LED sub-chip 2111 can normally display, and thus, the display failure of the Micro LED chip is effectively reduced.
Optionally, as shown in fig. 12, the Micro LED chip includes a chip substrate 240; the second repair line 14 is located on one side of the electrode layer 230 facing the chip substrate 240; a third insulating layer 30 is arranged between the electrode layer 230 and the second repairing line 14; the first end 141 of the second repair line 14 is electrically connected to the anode 231 through a via hole. The second repair line 14 is located on the side of the electrode layer 230 facing the chip substrate 240, and since the second repair line 14 is in direct contact with the electrode layer 230, a short circuit between the positive electrode 231 and the dummy electrode 233 or between the negative electrode 232 and the dummy electrode 233 may be caused, so that the third insulating layer 30 is disposed between the electrode layer 230 and the second repair line 14 to separate the electrode layer 230 from the second repair line 14. While the first end 141 of the second repair line 14 is electrically connected to the positive electrode 231 through the via 113. The second end 142 of the second repair line 14 is insulated from and overlaps the dummy electrode 233. Referring to fig. 13, when the Micro LED sub-chip has a fault, laser may be used to electrically connect the second end 142 of the second repair line 14 and the dummy electrode 233, so as to ensure the display effect. Similarly, the first end of the second repairing line is electrically connected with the negative electrode through the via hole, and the implementation principle is the same as that of the first end of the second repairing line which is electrically connected with the negative electrode through the via hole, which is not described herein again.
Fig. 14 is a schematic cross-sectional view of the laser front edge along the direction E1E2 in fig. 11, and fig. 15 is a schematic cross-sectional view of the laser rear edge along the direction E1E2 in fig. 11. Fig. 16 is a schematic cross-sectional view taken along direction F1F2 in fig. 11. As shown in fig. 14, the Micro LED chip includes a chip substrate 240; the second repair line 14 is located on one side of the electrode layer 230 facing away from the chip substrate 240; a third insulating layer 30 is arranged between the electrode layer 230 and the second repair line 14; the first end 141 of the second repair line 14 is electrically connected to the anode 231 through a via hole. The second end 142 of the second repair line 14 is insulated from and overlaps the dummy electrode 233. When the Micro LED sub-chip 2111 fails, referring to fig. 15, the second end 142 of the second repair line 14 and the dummy electrode 233 may be electrically connected by laser, so as to ensure the display effect. Referring to fig. 16, the Micro LED sub-chip 2111 is electrically connected to the positive electrode 231 and the dummy electrode 233 in a region where the second repair line 14 is not disposed.
Optionally, a fourth insulating layer is disposed between the second repair line and the Micro LED chip in an overlapping region of the second repair line and the Micro LED chip.
Referring to fig. 14 and 15, a fourth insulating layer 250 is disposed between the second repair line 14 and the Micro LED chips (including each Micro LED sub-chip 2111), so that when the Micro LED sub-chips 2111 are free of faults, the Micro LED sub-chips 2111 are prevented from being short-circuited by the second repair line 14.
Optionally, the second repair line does not overlap the Micro LED chip.
Fig. 17 is a schematic top view structure diagram of another Micro LED chip provided in an embodiment of the present invention, and considering the flatness of the overlapping area between the second repair line 14 and the Micro LED chip, as shown in fig. 17, the second repair line 14 is not overlapped with the Micro LED chip, that is, is not overlapped with each Micro LED sub-chip 2111, so that the phenomenon that the binding area is uneven when each Micro LED sub-chip is bound to form a Micro LED chip can be avoided.
Optionally, the distance between the positive electrode and the negative electrode of the Micro LED chip, the distance between the positive electrode and the dummy electrode, the distance between the negative electrode and the dummy electrode, and the distance between the dummy electrodes are all greater than the laser area of laser. If the distance between the positive electrode and the negative electrode of the Micro LED chip, the distance between the positive electrode and the dummy electrode, the distance between the negative electrode and the dummy electrode, and the distance between the dummy electrodes are too small, when the second end of the second repair wire is electrically connected to the dummy electrode in a laser mode, if an incorrect operation performs laser on the bonding pad between the positive electrode and the negative electrode, between the positive electrode and the dummy electrode, or between the negative electrode and the dummy electrode, the short circuit between the positive electrode and the negative electrode, between the positive electrode and the dummy electrode, or between the negative electrode and the dummy electrode of the Micro LED chip may occur, and the display may be affected. Therefore, the distance between the anode and the cathode of the Micro LED chip, the distance between the anode and the dummy electrode, and the distance between the cathode and the dummy electrode are set to be larger than the laser area of laser, and the laser area of laser is generally 3-5 μm, namely the distance between the anode and the cathode of the Micro LED chip, the distance between the anode and the dummy electrode, and the distance between the cathode and the dummy electrode are larger than 5 μm, so that the short circuit caused by misoperation in the laser process can be effectively avoided.
Optionally, the plurality of sub-pixel regions are arranged in an array along a first direction and a second direction, and the first direction and the second direction are crossed and parallel to the plane of the array substrate; the positive electrode pad and the negative electrode pad in the sub-pixel region do not overlap along the first direction and the second direction.
With continued reference to fig. 1, the minimum distance between the positive electrode pad 121 and the negative electrode pad 122 in the sub-pixel region 11 along the first direction X is a due to the limitation of the spatial size of the sub-pixel region. The minimum distance between the positive electrode pad 121 and the negative electrode pad 122 in the sub-pixel region 11 in the second direction Y is b. Since the positive electrode pad 121 and the negative electrode pad 122 in the sub-pixel region 11 do not overlap along the first direction X and the second direction Y, it can be known from the pythagorean theorem that the distance d between the positive electrode pad 121 and the negative electrode pad 122 satisfies: d > a and d > b. Compared with the prior art in which the positive electrode pads 121 and the negative electrode pads 122 are arranged along the first direction X with a spacing distance of a, or the positive electrode pads 121 and the negative electrode pads 122 are arranged along the second direction Y with a spacing distance of b, the embodiment of the invention increases the distance between the positive electrode pads 121 and the negative electrode pads 122 in the sub-pixel region 11, so that the risk of short circuit between the positive electrode pads 121 and the negative electrode pads 122 in the sub-pixel region 11 can be reduced.
Optionally, the minimum distance between the positive electrode pad and the negative electrode pad is greater than or equal to 15 um. In order to ensure that the positive electrode bonding pad and the negative electrode bonding pad are not mutually short-circuited, the minimum distance between the positive electrode bonding pad and the negative electrode bonding pad can be set to be larger than or equal to 15 um.
Optionally, on the basis of each of the above embodiments, if the Micro LED chip includes two Micro LED chipsets, each of the Micro LED chipsets includes two Micro LED sub-chips, and the bonding pad of the sub-pixel region includes two auxiliary pads. Positive pads, negative pads and two auxiliary pads may be arranged in a2 x 2 array. The positive and negative pads are located diagonally in the 2 x 2 array. For example, referring to fig. 1, the positive electrode pad 121, the negative electrode pad 122 and the two auxiliary pads 123 in each sub-pixel region 11 are arranged in a2 × 2 array, so that the positive electrode pad and the negative electrode pad are located at diagonal positions of the 2 × 2 array, and thus the distance between the positive electrode pad and the negative electrode pad can be increased to some extent, and the risk of short circuit between the positive electrode pad 121 and the negative electrode pad 122 in the sub-pixel region 11 is avoided. In addition, the positive electrode bonding pad 121, the negative electrode bonding pad 122 and the two auxiliary bonding pads 123 in each sub-pixel region 11 are arranged in a2 × 2 array, so that the bonding pads in the sub-pixel region can be arranged compactly, and the space area occupied by the sub-pixel region is reduced.
Optionally, the plurality of sub-pixel regions are arranged in an array along a first direction and a second direction, and the first direction and the second direction are crossed and parallel to the plane of the array substrate; along the first direction and the second direction, the anode and the cathode of the Micro LED chip are not overlapped; the Micro LED chip is bound with the positive bonding pad through the positive electrode; the Micro LED chip is bound with the negative electrode bonding pad through the negative electrode. For example, referring to fig. 8, the Micro LED chip includes a positive electrode 231 and a negative electrode 232. The anode 231 and the cathode 232 of the Micro LED chip do not overlap along the first direction X and the second direction Y. As shown in fig. 9 and 10, the Micro LED chip 21 is bound to the positive pad 121 through the positive electrode 231, and the Micro LED chip 21 is bound to the negative pad 123 through the negative electrode 232. According to the embodiment of the invention, the anode 231 and the cathode 232 of the Micro LED chip 21 are not overlapped along the first direction X and the second direction Y, so that the distance between the anode 231 and the cathode 232 of the Micro LED chip 21 can be increased, and the risk of short circuit of the anode 231 and the cathode 232 of the Micro LED chip 21 can be reduced.
Based on the above inventive concept, the embodiment of the invention also provides a display device. The display device includes the display panel according to any embodiment of the present invention, and therefore, the display device provided in the embodiment of the present invention has the corresponding beneficial effects of the display panel provided in the embodiment of the present invention, and details are not repeated herein. For example, the display device may be an electronic device such as a mobile phone, a computer, a smart wearable device (e.g., a smart watch), and an in-vehicle display device, which is not limited in this embodiment of the present invention. For example, fig. 18 is a schematic structural diagram of a display device according to an embodiment of the present invention. As shown in fig. 18, the display device includes the display panel 200 in the above-described embodiment.
It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (16)

1. A display panel, comprising:
an array substrate including a plurality of sub-pixel regions; a binding pad is arranged in the sub-pixel area; the binding pad of the sub-pixel region comprises an anode pad, a cathode pad and a plurality of auxiliary pads;
a Micro LED chip array; the Micro LED chip array comprises a plurality of Micro LED chips; the Micro LED chip comprises at least one Micro LED chip group; the Micro LED chip group comprises a plurality of Micro LED sub-chips; all the Micro LED sub-chips of the same Micro LED chip set are connected in series; all the Micro LED chip sets are connected in parallel;
the repair structure further comprises a first repair wire; a first end of the first repairing wire is electrically connected with the positive electrode bonding pad or the negative electrode bonding pad, and a second end of the first repairing wire is in insulation overlapping with the auxiliary bonding pad;
the Micro LED chips are correspondingly bound with the sub-pixel areas one by one; all the Micro LED sub-chips of the same Micro LED chip set are connected in series through the auxiliary bonding pad;
the Micro LED chip comprises an electrode layer; the electrode layer comprises a positive electrode, a negative electrode and a plurality of dummy electrodes; all the Micro LED sub-chips of the same Micro LED chip group are connected in series through the dummy electrode;
the dummy electrodes and the auxiliary bonding pads are correspondingly bound one by one; the Micro LED chip is bound with the positive bonding pad through the positive electrode; the Micro LED chip is bound with the negative electrode bonding pad through the negative electrode.
2. The display panel according to claim 1, wherein the array substrate comprises a substrate; the first repairing wire is positioned on one side, facing the substrate base plate, of the binding pad; a first insulating layer is arranged between the binding bonding pad and the first repairing wire; and the first end of the first repairing wire is electrically connected with the positive bonding pad or the negative bonding pad through a through hole.
3. The display panel according to claim 1, wherein the array substrate comprises a substrate; the first repairing wire is positioned on one side of the binding pad, which is far away from the substrate; a first insulating layer is arranged between the binding bonding pad and the first repairing wire; and the first end of the first repairing wire is electrically connected with the positive bonding pad or the negative bonding pad through a through hole.
4. The display panel according to claim 3, wherein a second insulating layer is arranged between the first repairing line and the Micro LED chip in an overlapping area of the first repairing line and the Micro LED chip.
5. The display panel of claim 1, wherein the first repair line does not overlap the Micro LED chip.
6. The display panel according to claim 1, wherein the sub-pixel region further includes a pixel driving circuit; the first repairing line and any metal layer of the pixel driving circuit are arranged in the same layer.
7. The display panel of claim 1, wherein the distance between adjacent bonding pads of the sub-pixel area is larger than the laser area of the laser.
8. The display panel of claim 1, wherein the Micro LED chip further comprises a second repair line; and a first end of the second repairing wire is electrically connected with the positive electrode or the negative electrode, and a second end of the second repairing wire is in insulation overlapping with the dummy electrode.
9. The display panel of claim 8, wherein the Micro LED chip comprises a chip substrate; the second repairing wire is positioned on one side, facing the chip substrate, of the electrode layer; a third insulating layer is arranged between the electrode layer and the second repairing wire; and the first end of the second repairing wire is electrically connected with the anode or the cathode through a through hole.
10. The display panel of claim 8, wherein the Micro LED chip comprises a chip substrate; the second repairing wire is positioned on one side of the electrode layer, which is far away from the chip substrate; a third insulating layer is arranged between the electrode layer and the second repairing line; and the first end of the second repairing wire is electrically connected with the anode or the cathode through a through hole.
11. The display panel of claim 10, wherein a fourth insulating layer is disposed between the second repair line and the Micro LED chip in an overlapping area of the second repair line and the Micro LED chip.
12. The display panel of claim 8, wherein the second repair line does not overlap the Micro LED chip.
13. The display panel of claim 8, wherein the distance between the positive electrode and the negative electrode, the distance between the positive electrode and the dummy electrode, the distance between the negative electrode and the dummy electrode, and the distance between the dummy electrodes of the Micro LED chip are all larger than the laser area of the laser.
14. The display panel according to claim 1, wherein the plurality of sub-pixel regions are arranged in an array along a first direction and a second direction, and the first direction and the second direction are crossed and parallel to a plane of the array substrate; the positive electrode pad and the negative electrode pad in the sub-pixel region do not overlap along the first direction and the second direction.
15. The display panel according to claim 1, wherein the plurality of sub-pixel regions are arranged in an array along a first direction and a second direction, and the first direction and the second direction are crossed and parallel to a plane of the array substrate; along the first direction and the second direction, the anode and the cathode of the Micro LED chip are not overlapped; the Micro LED chip is bound with the positive bonding pad through the positive electrode; the Micro LED chip is bound with the negative electrode bonding pad through the negative electrode.
16. A display device characterized by comprising the display panel according to any one of claims 1 to 15.
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