CN112928037B - Detection method - Google Patents
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- CN112928037B CN112928037B CN202110093723.0A CN202110093723A CN112928037B CN 112928037 B CN112928037 B CN 112928037B CN 202110093723 A CN202110093723 A CN 202110093723A CN 112928037 B CN112928037 B CN 112928037B
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- 238000001514 detection method Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 473
- 239000007788 liquid Substances 0.000 claims abstract description 205
- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 239000006227 byproduct Substances 0.000 claims abstract description 55
- 230000008859 change Effects 0.000 claims abstract description 55
- 238000012360 testing method Methods 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 39
- 239000002253 acid Substances 0.000 claims description 8
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 claims description 6
- 230000001186 cumulative effect Effects 0.000 claims description 4
- 239000002699 waste material Substances 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a detection method for detecting etching capability of etching liquid, which comprises the following steps: obtaining the content of etching byproducts in the etching liquid after etching each group of semiconductor structures according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures; then, according to the accumulated placement time of the etching liquid and the content of the etching byproducts, obtaining an etching rate change value of the etching liquid, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result; therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the increase of waste liquid discharge is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a detection method.
Background
In the etching process, the etched semiconductor structure can chemically react with the etching liquid, so that etching byproducts can be generated in the etching liquid, and the generated etching byproducts can cause the activity of the etching liquid to be weakened. The activity of the etching liquid is a key index for controlling the etching rate in the wet chemical etching process. Therefore, in order to ensure the stability of the etching rate, the etching ability of the etching liquid is generally checked.
In the prior art, the method for detecting the etching liquid comprises the following steps: the method comprises the steps of setting a preset program in wet etching equipment, calculating the placement time of etching liquid according to the wet etching equipment, and replacing the etching liquid once after the placement time of the etching liquid reaches the preset time, so that the etching rate of the etching liquid is ensured to be within a preset range. However, under different processes (or different groups of semiconductor structures), the amount of etching byproducts generated during the etching process is different, so that the method of changing the etching liquid according to the working time of the wet etching apparatus in the prior art can cause that the etching liquid is not fully utilized and replaced when the etching liquid is replaced, thereby causing waste of the etching liquid and increasing waste liquid discharge.
Disclosure of Invention
The invention aims to provide a detection method for detecting the etching capability of etching liquid, so as to solve the problems of waste of the etching liquid and increased waste liquid discharge caused by the fact that the etching liquid is not fully utilized and replaced when the etching liquid is replaced in the prior art.
In order to solve the above technical problems, the present invention provides a detection method, including:
providing a preset amount of etching liquid and providing the etching rate of the etching liquid at the beginning;
providing a plurality of groups of semiconductor structures, providing the cross-sectional area of a part to be etched in the semiconductor structures in the horizontal direction, and providing a first preset thickness of the part to be etched in the semiconductor structures, wherein the number of the semiconductor structures in each group is at least one;
sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness;
obtaining the content of etching byproducts in the etching liquid after etching each group of semiconductor structures according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures;
obtaining an etching rate change value of the etching liquid according to the accumulated placement time of the etching liquid and the content of the obtained etching byproducts;
and comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result.
Optionally, in the detecting method, the etching rate change value is obtained according to the following formula:
△E＝△E 1 +△E 2 the method comprises the steps of carrying out a first treatment on the surface of the Wherein, delta E is expressed as an etching rate variation value, delta E 1 Expressed as a first etch rate variation value, ΔE 2 Represented as a second etch rate variation value.
Optionally, in the detecting method, the first etching rate change value is obtained according to the following formula:
△E 1 ＝Q*K 1 wherein Q is expressed as the content of etching byproducts in the etching liquid after each group of semiconductor structures are etched, and K 1 Expressed as a first coefficient of variation;
the second etch rate variation value is obtained by the following formula:
△E 2 ＝T*K 2 wherein K is 2 Expressed as a second variation coefficient, and T is expressed as the cumulative set time of the etching liquid.
Optionally, in the detecting method, the content of the etching byproducts in the etching solution after etching each group of semiconductor structures is obtained according to the following formula:
Q 1 ＝(P 1 *T 1 *A 1 )；
Q n ＝(P 1 *T 1 *A 1 +…+P n *T n *A n )；
wherein Q is 1 Represents the content of etching byproducts in the etching solution after etching the first group of semiconductor structures, Q n Expressed as the content of etching byproducts in the etching liquid after etching the n-th group of semiconductor structures, P expressed as the number of semiconductor structures of each group, T expressed as a preset thickness, A expressed as the area of the top surface of the removed portion of one semiconductor structure, n expressed as the serial number of each group of semiconductor structures, and n.gtoreq.2.
Optionally, in the detecting method, the first etching rate change value is a difference between an etching rate of the etching solution at the initial time and an etching rate of the etching solution containing etching byproducts, and the second etching rate is an absolute value of a difference between the etching rate of the etching solution at the initial time and the etching rate of the etching solution after being placed for the accumulated placement time.
Optionally, in the detecting method, the method for obtaining the first change value coefficient includes:
providing a first test etching liquid with a preset quantity;
providing a detection sheet, wherein the detection sheet is used for testing the etching rate of the first test etching liquid at the initial time;
etching the detection sheet for the first time through the first test etching liquid;
obtaining the etching rate of the first test etching liquid at the beginning according to the first time and the thickness of the part of the detection piece, which is removed in the etching of the first time;
providing a plurality of semiconductor test structures, wherein the areas and the thicknesses of the top surfaces of the semiconductor test structures are the same;
etching the plurality of semiconductor test structures through the first test etching liquid to remove the semiconductor test structures with the second preset thickness;
obtaining the content of etching byproducts in the first test etching liquid after etching the plurality of semiconductor structures according to the second preset thickness and the area of the top surface of the semiconductor test structure;
etching the test piece for a second time through the first test etching liquid;
obtaining the etching rate when the first test etching liquid contains etching byproducts according to the second time and the thickness of the part of the detection sheet which is removed in the etching of the second time;
obtaining a difference value between the etching rate of the first test etching liquid at the initial time and the etching rate of the first test etching liquid containing byproducts so as to obtain a first etching rate difference value, and obtaining a first variation value coefficient according to the content of the etching byproducts in the first test etching liquid and the first etching rate difference value; wherein the first variation coefficient is equal to a ratio of the first etching rate difference value to a content of etching byproducts in the first etching liquid.
Optionally, in the detecting method, the method for obtaining the second change value coefficient includes:
providing a second test etching liquid with preset quantity, and obtaining the etching rate of the second test etching liquid at the initial time so as to obtain the first time etching rate;
placing the second test etching liquid for a preset time, and obtaining the etching rate of the test etching liquid after the second test etching liquid is placed for the preset time so as to obtain a second time etching rate;
obtaining a difference value between the first time etching rate and the second time etching rate to obtain a second etching rate difference value; and
obtaining the second variation value coefficient according to the obtained second etching rate difference value and the preset time; and the second change value coefficient is equal to the ratio of the preset time to the second etching rate difference value.
Optionally, in the detecting method, the method for comparing the obtained etching rate variation value with the first threshold value includes:
comparing the obtained etching rate change value with a first threshold value, and judging that the etching capability of the etching liquid is unqualified if the etching rate change value is larger than or smaller than the first threshold value;
if the etching rate change value is equal to the first threshold value, further comparing the accumulated placement time of the etching liquid with a second threshold value, and if the accumulated placement time of the etching liquid is greater than the second threshold value, judging that the etching capability of the etching liquid is unqualified; the accumulated placement time of the etching liquid is accumulated time after the etching liquid is placed in the acid tank.
Optionally, in the detecting method, when it is determined that the etching capability of the etching solution is not qualified, the etching solution is replaced.
Optionally, in the detection method, the first threshold is 0.5% -50% of the initial rate of the etching solution, and the second threshold is 1 h-240 h.
According to the detection method provided by the invention, the content of etching byproducts in the etching liquid after each group of semiconductor structures is etched is obtained according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures; then, according to the accumulated placement time of the etching liquid and the content of the etching byproducts, obtaining an etching rate change value of the etching liquid, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result; therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the increase of waste liquid discharge is avoided.
Drawings
Fig. 1 is a schematic flow chart of a detection method according to an embodiment of the present invention.
Detailed Description
The detection method proposed by the invention is further described in detail below with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
Fig. 1 is a flow chart of a detection method according to an embodiment of the invention. As shown in fig. 1, the present invention provides a detection method for detecting etching capability of an etching solution, the detection method comprising:
step S1: providing a preset amount of etching liquid and providing the etching rate of the etching liquid at the beginning;
step S2: providing a plurality of groups of semiconductor structures, providing the area of the top surface of a part to be etched in the semiconductor structures, and providing a first preset thickness of the part to be etched in the semiconductor structures, wherein the number of the semiconductor structures in each group is at least one;
step S3: sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness;
step S4: obtaining the content of etching byproducts in the etching liquid after etching each group of semiconductor structures according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures;
step S5: obtaining an etching rate change value of the etching liquid according to the accumulated placement time of the etching liquid and the content of the obtained etching byproducts;
step S6: and comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result.
Firstly, executing step S1, providing a preset amount of etching liquid, and providing the etching rate of the etching liquid at the beginning; specifically, a wet etching device is provided, where the wet etching device includes at least one acid tank, the acid tank has the etching solution therein, the etching solution may be, for example, an acidic etching solution, and the etching rate of the etching solution at the beginning is the etching rate of the etching solution with the etching byproduct content being zero or near zero.
Next, step S2 is performed to provide a plurality of groups of semiconductor structures, and provide an area of a top surface of the portion to be etched in the semiconductor structures, and provide a first preset thickness of the portion to be etched in the semiconductor structures, where the number of semiconductor structures in each group is at least one. The semiconductor structure may be a single-layer structure or a multi-layer stacked structure, for example, the semiconductor structure includes a substrate, and a film layer located on the substrate, where the film layer may be, for example, a silicon oxide layer, a silicon nitride layer, a polysilicon layer, or a oxynitride layer, and the area of the top surface of the portion to be etched in the semiconductor structure refers to the area of the top surface of the film layer located on the substrate, and the area of the top surface of the portion to be etched in the semiconductor structure may be smaller than the area of the top surface of the substrate.
And then, executing step S3, and sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness. Here, the thicknesses of the removed portions of the semiconductor structures in the same group are preset to be the same, and the first preset thickness may be the thickness of the portion to be removed of one semiconductor structure in one group.
Specifically, the multiple groups of products are sequentially placed in the acid tank, so that the products are etched through the etching liquid in the acid tank, namely, all semiconductor structures in one group are placed in the acid tank, and then all semiconductor structures in the same group are etched. In addition, the thicknesses of the removed portions of the semiconductor structures in the same group are preset to be the same, and the thicknesses of the removed portions of the semiconductor structures in different groups may be different.
And then, executing step S4, and obtaining the content of etching byproducts in the etching liquid after etching each group of semiconductor structures according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures.
Specifically, according to the first preset thickness and the area of the top surface of the removed portion of the semiconductor structure, the volume of the etched portion of one semiconductor structure in each group is obtained, so as to obtain the etching byproduct content in the etching liquid after each group of semiconductor structures is etched.
Further, the etching byproduct content in the etching liquid after each group of semiconductor structures is etched is obtained according to the following formula:
Q 1 ＝(P 1 *T 1 *A 1 )；
Q n ＝(P 1 *T 1 *A 1 +…+P n *T n *A n )；
wherein Q represents the content of etching byproducts in the etching liquid after each group of semiconductor structures is etched, P represents the number of each group of semiconductor structures, T represents the first preset thickness, A represents the area of the top surface of the etched-out part of one semiconductor structure, n represents the serial number of each group of semiconductor structures, and n is equal to or greater than 2. Further, Q 1 Expressed as the content, Q, of etch byproducts in the etching solution after etching the first set of semiconductor structures n Expressed as the content of etch byproducts in the etching solution after etching the n-th group of semiconductor structures, e.g., Q when n=2 2 Expressed as the amount of etch byproducts in the etching solution after etching the second set of semiconductor structures.
And step S5, obtaining the etching rate change value of the etching liquid according to the accumulated placement time of the etching liquid and the content of the obtained etching byproducts.
Specifically, the etching rate change value is obtained by adding the first etching rate change value and the second etching rate change value.
Further, the etching rate change value is obtained according to the following formula:
△E＝△E 1 +△E 2 the method comprises the steps of carrying out a first treatment on the surface of the Wherein, delta E is expressed as an etching rate variation value, delta E 1 Expressed as a first etch rate variation value, ΔE 2 Represented as a second etch rate variation value.
The first etching rate change value is obtained by the following formula:
△E 1 ＝Q*K 1 wherein Q is expressed as the content of etching byproducts in the etching liquid after each group of semiconductor structures are etched, and K 1 Represented as a first coefficient of variation. I.e., the first etching rate variation value is obtained by multiplying the content of etching byproducts in the etching liquid by a first variation value coefficient.
Further, the first etching rate variation value after etching the first group is obtained by the following formula:
△E 11 ＝Q 1 *K 1 wherein DeltaE 11 The change value of the etching rate after etching the first group of semiconductor structures is represented;
and the first etching rate change value after the nth group is etched is obtained by the following formula:
E 1n ＝Q n *K 1 n is equal to or greater than 2, wherein DeltaE 1n The change value of the etching rate after etching the n group of semiconductor structures is expressed;
the second etching rate change value is obtained by the following formula:
△E 2 ＝T*K 2 wherein K is 2 Expressed as a second variation coefficient, and T is expressed as the cumulative set time of the etching liquid. Namely, the second etching rate is the etching rate of the etching liquid at the initial time and the etchingThe absolute value of the difference between the etching rates after the etching solution is placed for the cumulative placement time.
The first etching rate change value is the difference between the etching rate of the etching liquid at the initial time and the etching rate of the etching liquid containing etching byproducts.
Further, the method for obtaining the first change value coefficient includes:
step S510, providing a first test etching liquid with a preset quantity;
step S511, providing a detection sheet, wherein the detection sheet is used for testing the etching rate of the first test etching liquid at the initial time;
step S512, etching the detection piece for the first time through the first test etching liquid;
step S513, obtaining the etching rate of the first test etching liquid at the beginning according to the first time and the thickness of the removed part of the detection piece in the etching of the first time; the detection sheet can comprise a silicon oxide layer, a silicon nitride layer and/or a polysilicon layer, and is mainly used for detecting or testing the etching rate of the first test etching liquid.
Step S514, providing a plurality of semiconductor test structures, wherein the areas and thicknesses of the top surfaces of the semiconductor test structures are the same, i.e. the areas of the top surfaces of the semiconductor test structures are the same, and the thicknesses of the semiconductor test structures are the same. The semiconductor test structure may include a silicon oxide layer, a silicon nitride layer, and/or a polysilicon layer. Further, the material of the film layer in the detecting sheet is the same as the material of the film layer in the semiconductor test structure, and the thickness of the film layer in the detecting sheet may be different from the thickness of the film layer in the semiconductor test structure. The number of semiconductor test structures in the plurality of semiconductor test structures may be at least fifty, so that the obtained first variation value coefficient is more accurate.
Step S515, etching the plurality of semiconductor test structures through the first test etching liquid to remove the semiconductor test structures with the second preset thickness;
step S516, obtaining the content of etching byproducts in the first test etching liquid after etching the plurality of semiconductor structures according to the second preset thickness and the area of the top surface of the semiconductor test structure;
step S517, etching the test piece for a second time through the first test etching liquid;
step S518, obtaining the etching rate of the first test etching liquid containing etching byproducts according to the second time and the thickness of the removed part of the detection piece in the etching of the second time;
step S519, obtaining a difference value between the etching rate of the first test etching liquid at the initial time and the etching rate of the first test etching liquid containing byproducts so as to obtain a first etching rate difference value, and obtaining a first change value coefficient according to the content of the etching byproducts in the first test etching liquid and the first etching rate difference value; wherein the first variation coefficient is equal to a ratio of the first etching rate difference value to a content of etching byproducts in the first etching liquid.
The inventor researches find that the content of the etching byproducts in the etching liquid is in a linear relation with the etching rate of the etching liquid, the content of the etching byproducts in the etching liquid is related to the thickness of the removed part of the semiconductor structure in the etching process and the area of the top surface of the removed part of the semiconductor structure, and therefore the first change value coefficient can be obtained according to the initial etching rate of the etching liquid and the etching rate of the etching liquid with different contents of the etching byproducts.
The second etching rate change value is obtained by multiplying the accumulated placement time of the etching liquid by a second change value coefficient. The accumulated placement time of the etching liquid is accumulated time after the etching liquid is placed in the acid tank, namely the accumulated placement time of the etching liquid comprises time of the etching liquid used in etching of each group of semiconductor structures and time of the etching liquid when the etching liquid is empty, and the time of the etching liquid when the etching liquid is empty is time when etching is not performed. Further, the method for obtaining the second variation coefficient includes the following steps:
step S520: providing a second test etching liquid with preset quantity, and obtaining the etching rate of the second test etching liquid at the initial time so as to obtain the first time etching rate;
step S521: placing the second test etching liquid for a preset time, and obtaining the etching rate of the test etching liquid after the second test etching liquid is placed for the preset time so as to obtain a second time etching rate;
step S522: obtaining a difference value between the first time etching rate and the second time etching rate to obtain a second etching rate difference value; the method comprises the steps of,
step S523: obtaining the second variation value coefficient according to the obtained second etching rate difference value and the preset time; and the second change value coefficient is equal to the ratio of the preset time to the second etching rate difference value.
The inventor further researches that the etching liquid volatilizes along with the change of the accumulated placement time of the etching liquid in the using process, the etching rate is affected after the etching liquid volatilizes, and further, the etching rate of the etching liquid and the accumulated placement time of the etching liquid are in a linear relation, so that the second change value coefficient can be obtained through the second etching rate difference value and the preset time. Thus, the etching rate change value can be obtained according to the first change value coefficient and the second change value coefficient.
Further, the etching capability of the etching liquid can be evaluated according to the etching rate change value, so as to judge whether the etching capability of the etching liquid is qualified or not, and whether the etching liquid is replaced or not is judged according to the evaluated etching capability of the etching liquid. Therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the increase of waste liquid discharge is avoided.
And then, executing step S6, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result. Specifically, the method for comparing the obtained etching rate variation value with a threshold value comprises the following steps: comparing the obtained etching rate change value with a first threshold value, and judging that the etching capability of the etching liquid is unqualified if the etching rate change value is larger than or smaller than the first threshold value; if the etching rate change value is equal to the first threshold value, the accumulated placement time of the etching liquid is further compared with a second threshold value, and if the accumulated placement time of the etching liquid is greater than the second threshold value, the etching capability of the etching liquid is judged to be unqualified. Further, if the etching rate change value is equal to the first threshold value and the second etching rate change value is smaller than or equal to the second threshold value, determining that the etching capability of the etching solution is qualified. More specifically, the first threshold is 0.5% -50% of the etching rate of the etching liquid at the initial time. The second threshold is 1 h-240 h, and the second threshold is obtained according to experimental tests of the etching liquid.
Further, when the etching capability of the etching liquid is judged to be unqualified, the etching liquid is replaced. Therefore, when the etching capability of the etching liquid is unqualified, the etching liquid can be replaced in time, so that the time for replacing the etching liquid can be accurately controlled, the situation that the etching liquid is replaced under the condition of not being fully utilized is avoided, the waste of the etching liquid is caused, and the increase of waste liquid discharge is avoided.
In summary, in the detection method provided by the embodiment of the invention, the content of the etching byproducts in the etching liquid after each group of semiconductor structures is etched is obtained according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures; then, according to the accumulated placement time of the etching liquid and the content of the etching byproducts, obtaining an etching rate change value of the etching liquid, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result; therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the increase of waste liquid discharge is avoided.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (10)
1. A detection method for detecting etching capability of an etching liquid, comprising:
providing a preset amount of etching liquid and providing the etching rate of the etching liquid at the beginning;
providing a plurality of groups of semiconductor structures, providing the area of the top surface of a part to be etched in the semiconductor structures, and providing the thickness of the part to be etched in the semiconductor structures to provide a first preset thickness, wherein the number of the semiconductor structures in each group is at least one;
sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness;
obtaining the content of etching byproducts in the etching liquid after etching each group of semiconductor structures according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures;
obtaining an etching rate change value of the etching liquid according to the accumulated placement time of the etching liquid and the content of the obtained etching byproducts;
and comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result.
2. The method of claim 1, wherein the etch rate variation value is obtained according to the following formula:
△E＝△E 1 +△E 2 the method comprises the steps of carrying out a first treatment on the surface of the Wherein, delta E is expressed as an etching rate variation value, delta E 1 Representation ofFor the first etch rate variation value, ΔE 2 Represented as a second etch rate variation value.
3. The method of detecting as claimed in claim 2, wherein the first etch rate variation value is obtained according to the following formula:
△E 1 ＝Q*K 1 wherein Q is expressed as the content of etching byproducts in the etching liquid after each group of semiconductor structures are etched, and K 1 Expressed as a first coefficient of variation;
the second etching rate change value is obtained by the following formula:
△E 2 ＝T*K 2 wherein K is 2 Expressed as a second variation coefficient, and T is expressed as the cumulative set time of the etching liquid.
4. The method of detecting as claimed in claim 3, wherein the content of etching byproducts in the etching solution after etching each group of the semiconductor structures is obtained according to the following formula:
Q 1 ＝(P 1 *T 1 *A 1 )；
Q n ＝(P 1 *T 1 *A 1 +…+P n *T n *A n )；
wherein Q is 1 Expressed as the content, Q, of etch byproducts in the etching solution after etching the first set of semiconductor structures n Expressed as the content of etching byproducts in the etching liquid after etching the n-th group of semiconductor structures, P expressed as the number of semiconductor structures of each group, T expressed as a preset thickness, A expressed as the area of the top surface of the removed portion of one semiconductor structure, n expressed as the serial number of each group of semiconductor structures, and n.gtoreq.2.
5. The method of detecting as claimed in claim 3, wherein the first etching rate variation value is a difference between an etching rate at which the etching liquid is initially and an etching rate at which the etching liquid contains etching byproducts, and the second etching rate is an absolute value of a difference between the etching rate at which the etching liquid is initially and the etching rate after the etching liquid is placed for the accumulated placement time.
6. The method for detecting a first variation coefficient according to claim 3, wherein the method for obtaining the first variation coefficient comprises:
providing a first test etching liquid with a preset quantity;
providing a detection sheet, wherein the detection sheet is used for testing the etching rate of the first test etching liquid at the initial time;
etching the detection sheet for the first time through the first test etching liquid;
obtaining the etching rate of the first test etching liquid at the beginning according to the first time and the thickness of the part of the detection piece, which is removed in the etching of the first time;
providing a plurality of semiconductor test structures, wherein the areas and the thicknesses of the top surfaces of the semiconductor test structures are the same;
etching the plurality of semiconductor test structures through the first test etching liquid to remove the semiconductor test structures with the second preset thickness;
obtaining the content of etching byproducts in the first test etching liquid after etching the plurality of semiconductor structures according to the second preset thickness and the area of the top surface of the semiconductor test structure;
etching the detection sheet for a second time through the first test etching liquid;
obtaining the etching rate when the first test etching liquid contains etching byproducts according to the second time and the thickness of the part of the detection sheet which is removed in the etching of the second time;
obtaining a difference value between the etching rate of the first test etching liquid at the initial time and the etching rate of the first test etching liquid containing byproducts so as to obtain a first etching rate difference value, and obtaining a first variation value coefficient according to the content of the etching byproducts in the first test etching liquid and the first etching rate difference value; wherein the first variation coefficient is equal to a ratio of the first etching rate difference to a content of etching byproducts in the first test etching liquid.
7. The method for detecting a signal according to claim 3, wherein the method for obtaining the second variation coefficient comprises:
providing a second test etching liquid with preset quantity, and obtaining the etching rate of the second test etching liquid at the initial time so as to obtain the first time etching rate;
placing the second test etching liquid for a preset time, and obtaining the etching rate of the test etching liquid after the second test etching liquid is placed for the preset time so as to obtain a second time etching rate;
obtaining a difference value between the first time etching rate and the second time etching rate to obtain a second etching rate difference value; and
obtaining the second variation value coefficient according to the obtained second etching rate difference value and the preset time; and the second change value coefficient is equal to the ratio of the preset time to the second etching rate difference value.
8. The method of detecting as claimed in claim 1, wherein the method of comparing the obtained etching rate variation value with the threshold value comprises:
comparing the obtained etching rate change value with a first threshold value, and judging that the etching capability of the etching liquid is unqualified if the etching rate change value is larger than or smaller than the first threshold value;
if the etching rate change value is equal to the first threshold value, further comparing the accumulated placement time of the etching liquid with a second threshold value, and if the accumulated placement time of the etching liquid is greater than the second threshold value, judging that the etching capability of the etching liquid is unqualified; the accumulated placement time of the etching liquid is accumulated time after the etching liquid is placed in the acid tank.
9. The method according to claim 8, wherein the etching liquid is replaced when it is determined that the etching ability of the etching liquid is not acceptable.
10. The method of claim 8, wherein the first threshold is 0.5-50% of the initial rate of the etching solution and the second threshold is 1-240 h.
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