CN112928037A - Detection method - Google Patents
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- CN112928037A CN112928037A CN202110093723.0A CN202110093723A CN112928037A CN 112928037 A CN112928037 A CN 112928037A CN 202110093723 A CN202110093723 A CN 202110093723A CN 112928037 A CN112928037 A CN 112928037A
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- 238000001514 detection method Methods 0.000 title claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 465
- 239000007788 liquid Substances 0.000 claims abstract description 172
- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 239000006227 byproduct Substances 0.000 claims abstract description 55
- 238000012360 testing method Methods 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 9
- 230000001186 cumulative effect Effects 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims 2
- 239000002699 waste material Substances 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a detection method for detecting the etching capacity of etching liquid, which comprises the following steps: obtaining the content of etching byproducts in the etching liquid after each group of semiconductor structures is etched according to the first preset thickness and the area of the top surface of the removed part in each group of semiconductor structures; then, obtaining an etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the content of the etching by-products, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result; therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the waste liquid discharge is prevented from being increased.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a detection method.
Background
In the etching process, the etched semiconductor structure and the etching liquid generate chemical reaction, so that etching byproducts are generated in the etching liquid, and the generated etching byproducts can cause the activity of the etching liquid to be weakened. The activity of the etching solution is a key index for controlling the etching rate in the wet chemical etching process. Therefore, in order to ensure the stability of the etching rate, the etching capability of the etching solution is usually tested.
In the prior art, a method for detecting an etching solution includes: and setting a preset program in the wet etching equipment, calculating the standing time of the etching liquid according to the wet etching equipment, and replacing the etching liquid once after the standing time of the etching liquid reaches preset time, thereby ensuring that the etching rate of the etching liquid is in a preset range. However, in different processes (or different groups of semiconductor structures), the amount of etching byproducts generated in the etching process is different, and therefore, in the prior art, the method of replacing the etching solution according to the working time of the wet etching apparatus may cause the etching solution to be replaced without being fully utilized, thereby causing waste of the etching solution and increasing waste liquid discharge.
Disclosure of Invention
The invention aims to provide a detection method for detecting the etching capacity of etching liquid, so as to solve the problems that the etching liquid is replaced without being fully utilized when the etching liquid is replaced in the prior art, so that the etching liquid is wasted and the waste liquid discharge is increased.
In order to solve the above technical problem, the present invention provides a detection method, including:
providing a preset amount of etching liquid and providing the initial etching rate of the etching liquid;
providing a plurality of groups of semiconductor structures, providing the cross-sectional area of a part to be etched in the semiconductor structures in the horizontal direction, and providing a first preset thickness of the part to be etched of the semiconductor structures, wherein the number of the semiconductor structures in each group is at least one;
sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness;
obtaining the content of etching byproducts in the etching solution after each group of semiconductor structures is etched according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures;
obtaining the etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the obtained content of the etching by-product;
and comparing the obtained etching rate change value with a threshold value, and judging whether the etching capacity of the etching liquid is qualified or not according to the comparison result.
Optionally, in the detection method, the etching rate variation value is obtained according to the following formula:
△E＝△E1+△E2(ii) a Wherein, Delta E is represented by a value of a change in etching rate1Expressed as a first etch rate variation value,. DELTA.E2Expressed as a second etch rate change value.
Optionally, in the detection method, the first etching rate variation value is obtained according to the following formula:
△E1＝Q*K1wherein Q represents the content of etching by-products in the etching solution after etching each group of semiconductor structures, and K1Expressed as a first variation coefficient;
the second etching rate variation value is obtained by the following formula:
△E2＝T*K2wherein, K is2Expressed as a second coefficient of variation, and T is expressed as the cumulative standing time of the etching solution.
Optionally, in the detection method, the content of the etching by-product in the etching solution after etching each group of semiconductor structures is obtained according to the following formula:
Q1＝(P1*T1*A1)；
Qn＝(P1*T1*A1+…+Pn*Tn*An)；
wherein Q is1Represents the content of etching by-products, Q, in the etching solution after etching the first group of semiconductor structuresnExpressed as the content of etching by-products in the etching solution after etching the n-th group of semiconductor structures, P is expressed as the number of semiconductor structures in each group, T is expressed as a preset thickness, A is expressed as the area of the top surface of the removed part in one semiconductor structure, n is expressed as the serial number of each group of semiconductor structures, andand n is more than or equal to 2.
Optionally, in the detection method, the first etching rate variation value is a difference between an etching rate at the beginning of the etching solution and an etching rate at the time when the etching solution contains an etching byproduct, and the second etching rate is an absolute value of a difference between the etching rate at the beginning of the etching solution and the etching rate after the etching solution is placed for the accumulated placing time.
Optionally, in the detection method, the obtaining method of the first variation coefficient includes:
providing a preset amount of first test etching liquid;
providing a detection sheet for testing the etching rate of the first test etching liquid at the beginning;
etching the detection sheet for the first time through the first test etching liquid;
obtaining the initial etching rate of the first test etching liquid according to the first time and the thickness of the part of the detection sheet removed in the etching of the first time;
providing a plurality of semiconductor test structures, wherein the areas and the thicknesses of the top surfaces of the semiconductor test structures are the same;
etching the plurality of semiconductor test structures through the first test etching liquid to remove the semiconductor test structures with second preset thickness;
obtaining the content of etching byproducts in the first test etching solution after the plurality of semiconductor structures are etched according to the second preset thickness and the area of the top surface of the semiconductor test structure;
etching the test piece for a second time through the first test etching liquid;
obtaining the etching rate of the first test etching liquid containing etching byproducts according to the second time and the thickness of the part of the detection sheet removed in the etching at the second time;
obtaining a difference value between the initial etching rate of the first test etching liquid and the etching rate of the first test etching liquid containing byproducts to obtain a first etching rate difference value, and obtaining a first variation value coefficient according to the obtained content of the etching byproducts in the first test etching liquid and the first etching rate difference value; wherein the first variation coefficient is equal to a ratio of the first etching rate difference to a content of the etching by-product in the first etching solution.
Optionally, in the detection method, the obtaining method of the second variation coefficient includes:
providing a preset amount of second test etching liquid, and obtaining the initial etching rate of the second test etching liquid to obtain a first time etching rate;
placing the second test etching liquid for a preset time, and obtaining the etching rate of the test etching liquid after the second test etching liquid is placed for the preset time so as to obtain a second time etching rate;
obtaining a difference value between the first time etching rate and the second time etching rate to obtain a second etching rate difference value; and
obtaining a second variation value coefficient according to the obtained second etching rate difference value and the preset time; wherein the second variation coefficient is equal to a ratio of the preset time to the second etching rate difference.
Optionally, in the detection method, the method for comparing the obtained etching rate variation value with the first threshold includes:
comparing the obtained etching rate change value with a first threshold value, and if the etching rate change value is greater than or less than the first threshold value, determining that the etching capacity of the etching liquid is unqualified;
if the etching rate change value is equal to the first threshold value, further comparing the accumulated standing time of the etching liquid with a second threshold value, and if the accumulated standing time of the etching liquid is greater than the second threshold value, determining that the etching capacity of the etching liquid is unqualified; and the accumulated standing time of the etching liquid is the accumulated time of the etching liquid after being placed in the acid tank.
Optionally, in the detection method, when the etching capability of the etching liquid is determined to be not qualified, the etching liquid is replaced.
Optionally, in the detection method, the first threshold is 0.5% to 50% of the initial rate of the etching solution, and the second threshold is 1h to 240 h.
According to the detection method provided by the invention, the content of the etching by-products in the etching liquid after each group of semiconductor structures is etched is obtained according to the first preset thickness and the area of the top surface of the removed part in each group of semiconductor structures; then, obtaining an etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the content of the etching by-products, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capability of the etching liquid is qualified or not according to a comparison result; therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the waste liquid discharge is prevented from being increased.
Drawings
Fig. 1 is a schematic flow chart of a detection method according to an embodiment of the present invention.
Detailed Description
The detection method provided by the invention is further described in detail with reference to the drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Please refer to fig. 1, which is a flowchart illustrating a detection method according to an embodiment of the present invention. As shown in fig. 1, the present invention provides a detection method for detecting etching capability of an etching solution, the detection method comprising:
step S1: providing a preset amount of etching liquid and providing the initial etching rate of the etching liquid;
step S2: providing a plurality of groups of semiconductor structures, providing the area of the top surface of a part to be etched in the semiconductor structures, and providing a first preset thickness of the part to be etched of the semiconductor structures, wherein the number of the semiconductor structures in each group is at least one;
step S3: sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness;
step S4: obtaining the content of etching byproducts in the etching solution after each group of semiconductor structures is etched according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures;
step S5: obtaining the etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the obtained content of the etching by-product;
step S6: and comparing the obtained etching rate change value with a threshold value, and judging whether the etching capacity of the etching liquid is qualified or not according to the comparison result.
Firstly, step S1 is executed to provide a preset amount of etching solution and provide an initial etching rate of the etching solution; specifically, the wet etching equipment comprises at least one acid tank, the etching liquid is contained in the acid tank, the etching liquid can be an acid etching solution, for example, and the initial etching rate of the etching liquid is the etching rate of the etching liquid when the content of the etching by-product is zero or close to zero.
Next, step S2 is performed to provide a plurality of groups of semiconductor structures, and provide an area of a top surface of a portion of the semiconductor structures to be etched, and provide a first predetermined thickness of the portion of the semiconductor structures to be etched, wherein the number of the semiconductor structures in each group is at least one. The semiconductor structure may be a single-layer structure or a multi-layer stacked structure, for example, the semiconductor structure includes a substrate and a film layer located on the substrate, where the film layer may be, for example, a silicon oxide layer, a silicon nitride layer, a polysilicon layer, or a nitride oxide layer, and an area of a top surface of a portion to be etched in the semiconductor structure refers to an area of a top surface of the film layer located on the substrate, and an area of the top surface of the portion to be etched in the semiconductor structure may be smaller than an area of the top surface of the substrate.
Then, step S3 is executed, and the groups of semiconductor structures are sequentially etched by the etching solution to remove the semiconductor structures with the first preset thickness. Here, it is preset that the thickness of the removed portion of the semiconductor structures in the same group is the same, and the first preset thickness may be the thickness of the portion of one semiconductor structure in one group to be removed.
Specifically, the multiple groups of products are sequentially placed in the acid tank, so that the products are etched by the etching liquid in the acid tank, that is, all the semiconductor structures in one group are placed in the acid tank, and then all the semiconductor structures in the same group are etched. Further, it is preset that the thicknesses of the portions of the semiconductor structures in the same group that are removed are the same, and the thicknesses of the portions of the semiconductor structures in different groups that are removed may be different.
Next, step S4 is executed, and the content of the etching byproducts in the etching solution after etching each group of semiconductor structures is obtained according to the first preset thickness and the area of the top surface of the removed portion of the semiconductor structures.
Specifically, the volume of the etched part in one semiconductor structure in each group is obtained according to the first preset thickness and the area of the top surface of the part of the semiconductor structure removed, so as to obtain the content of the etching by-product in the etching solution after each group of semiconductor structures is etched.
Further, the content of the etching by-products in the etching solution after each group of semiconductor structures is etched is obtained according to the following formula:
Q1＝(P1*T1*A1)；
Qn＝(P1*T1*A1+…+Pn*Tn*An)；
wherein Q represents the content of etching byproducts in the etching solution after each group of semiconductor structures is etched, P represents the number of the semiconductor structures in each group, T represents a first preset thickness, A represents the area of the top surface of the part etched and removed in one semiconductor structure, n represents the serial number of each group of semiconductor structures, and n is more than or equal to 2. Further, Q1Expressed as the content of etch by-products, Q, in the etching solution after etching the first set of semiconductor structuresnExpressed as the content of etching by-products in the etching solution after etching the n-th group of semiconductor structures, e.g. when n is 2, Q2Expressed as the amount of etch byproducts in the etching solution after etching the second set of semiconductor structures.
And then, executing step S5, and obtaining the etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the obtained content of the etching by-product.
Specifically, the etching rate variation value is obtained by adding a first etching rate variation value and a second etching rate variation value.
Further, the etching rate variation value is obtained according to the following formula:
△E＝△E1+△E2(ii) a Wherein, Delta E is represented by a value of a change in etching rate1Expressed as a first etch rate variation value,. DELTA.E2Expressed as a second etch rate change value.
The first etching rate variation value is obtained by the following formula:
△E1＝Q*K1wherein Q represents the content of etching by-products in the etching solution after etching each group of semiconductor structures, and K1Expressed as a first variation coefficient. Namely, the first etching rate variation value is obtained by multiplying the content of the etching by-product in the etching liquid by a first variation value coefficient.
Further, the first etching rate variation value after etching the first group is obtained by the following formula:
△E11＝Q1*K1wherein, ΔE11Expressed as a change in etch rate after etching the first set of semiconductor structures;
and the first etching rate change value after the nth group is etched is obtained through the following formula:
E1n＝Qn*K1n is not less than 2, wherein, Delta E1nShowing the change value of the etching rate after the nth group of semiconductor structures are etched;
the second etching rate variation value is obtained by the following formula:
△E2＝T*K2wherein, K is2Expressed as a second coefficient of variation, and T is expressed as the cumulative standing time of the etching solution. Namely, the second etching rate is the absolute value of the difference between the etching rate of the etching liquid at the beginning and the etching rate of the etching liquid after being placed for the accumulated placing time.
The first etching rate change value is the difference between the etching rate of the etching liquid at the beginning and the etching rate of the etching liquid containing etching byproducts.
Further, the method for obtaining the first variation coefficient includes:
step S510, providing a preset amount of first test etching liquid;
step S511, providing a detection sheet, wherein the detection sheet is used for testing the etching rate of the first test etching liquid at the beginning;
s512, etching the detection sheet for the first time by the first test etching liquid;
step S513, obtaining the initial etching rate of the first test etching liquid according to the first time and the thickness of the part of the detection sheet removed in the etching of the first time; the detection sheet can comprise a silicon oxide layer, a silicon nitride layer and/or a polycrystalline silicon layer, and is mainly used for detecting or testing the etching rate of the first test etching liquid.
Step S514, a plurality of semiconductor test structures are provided, and the areas and the thicknesses of the top surfaces of the semiconductor test structures are the same, namely the areas of the top surfaces of the semiconductor test structures are the same, and the thicknesses of the semiconductor test structures are the same. The semiconductor test structure may include a silicon oxide layer, a silicon nitride layer, and/or a polysilicon layer. Furthermore, the material of the film layer in the detection sheet is the same as that of the film layer in the semiconductor test structure, and the thickness of the film layer in the detection sheet may be different from that of the film layer in the semiconductor test structure. The number of semiconductor test structures in the plurality of semiconductor test structures may be at least fifty, so that the obtained first coefficient of variation is more accurate.
Step S515, etching the plurality of semiconductor test structures through the first test etching liquid to remove the semiconductor test structures with a second preset thickness;
step S516, obtaining the content of the etching byproducts in the first test etching solution after the plurality of semiconductor structures are etched according to the second preset thickness and the area of the top surface of the semiconductor test structure;
step S517, etching the test piece for a second time through the first test etching liquid;
step S518, obtaining the etching rate of the first test etching liquid containing etching byproducts according to the second time and the thickness of the part of the detection sheet removed in the etching at the second time;
step S519, obtaining a difference value between the etching rate of the first test etching liquid at the beginning and the etching rate of the first test etching liquid containing byproducts to obtain a first etching rate difference value, and obtaining a first variation value coefficient according to the obtained content of the etching byproducts in the first test etching liquid and the first etching rate difference value; wherein the first variation coefficient is equal to a ratio of the first etching rate difference to a content of the etching by-product in the first etching solution.
The inventor researches and finds that the content of the etching by-product contained in the etching solution is in a linear relation with the etching rate of the etching solution, and the content of the etching by-product in the etching solution is related to the thickness of the part of the semiconductor structure removed in the etching process and the area of the top surface of the part of the semiconductor structure removed, so that the etching rate of the etching solution at the beginning and the etching rate of the etching solution containing different contents of the etching by-product can be obtained according to experimental tests, and the first variation coefficient is obtained.
The second etching rate change value is obtained by multiplying the accumulated standing time of the etching liquid by a second change value coefficient. The accumulated standing time of the etching liquid is the accumulated time after the etching liquid is placed in the acid tank, namely the accumulated standing time of the etching liquid comprises the time when the etching liquid is used in etching of each group of semiconductor structures and the time when the etching liquid is vacant, and the time when the etching liquid is vacant is the time when the etching liquid is not etched. Further, the method for obtaining the second variation coefficient includes the following steps:
step S520: providing a preset amount of second test etching liquid, and obtaining the initial etching rate of the second test etching liquid to obtain a first time etching rate;
step S521: placing the second test etching liquid for a preset time, and obtaining the etching rate of the test etching liquid after the second test etching liquid is placed for the preset time so as to obtain a second time etching rate;
step S522: obtaining a difference value between the first time etching rate and the second time etching rate to obtain a second etching rate difference value; and the number of the first and second groups,
step S523: obtaining a second variation value coefficient according to the obtained second etching rate difference value and the preset time; wherein the second variation coefficient is equal to a ratio of the preset time to the second etching rate difference.
The inventor further researches and discovers that the etching liquid can volatilize along with the change of the accumulated standing time of the etching liquid in the using process, the etching rate can be influenced after the etching liquid volatilizes, and further, the etching rate of the etching liquid and the accumulated standing time of the etching liquid are in a linear relation, so that the second change value coefficient can be obtained through the second etching rate difference and the preset time. Therefore, the etching rate change value can be obtained according to the first change value coefficient and the second change value coefficient.
Further, the etching capability of the etching liquid can be evaluated according to the etching rate change value to judge whether the etching capability of the etching liquid is qualified, and whether the etching liquid is replaced is judged according to the evaluated etching capability of the etching liquid. Therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the waste liquid discharge is prevented from being increased.
And then, executing step S6, comparing the obtained etching rate variation value with a threshold, and determining whether the etching capability of the etching solution is qualified according to the comparison result. Specifically, the method for comparing the obtained etching rate variation value with a threshold value includes: comparing the obtained etching rate change value with a first threshold value, and if the etching rate change value is greater than or less than the first threshold value, determining that the etching capacity of the etching liquid is unqualified; and if the change value of the etching rate is equal to the first threshold value, further comparing the accumulated standing time of the etching liquid with a second threshold value, and if the accumulated standing time of the etching liquid is greater than the second threshold value, determining that the etching capacity of the etching liquid is unqualified. Further, if the etching rate variation value is equal to the first threshold value and the second etching rate variation value is less than or equal to the second threshold value, the etching capability of the etching solution is determined to be qualified. More specifically, the first threshold is 0.5% -50% of the initial etching rate of the etching solution. The second threshold value is 1 h-240 h, and the second threshold value is obtained according to experimental tests of the etching solution.
Further, when the etching capability of the etching liquid is judged to be unqualified, the etching liquid is replaced. Therefore, when the etching capacity of the etching liquid is unqualified, the etching liquid can be replaced in time, so that the opportunity of the etching liquid can be accurately controlled and replaced, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the discharge of waste liquid is avoided.
In summary, in the detection method provided by the embodiment of the invention, the content of the etching by-product in the etching solution after each group of semiconductor structures is etched is obtained according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures; then, obtaining an etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the content of the etching by-products, comparing the obtained etching rate change value with a threshold value, and judging whether the etching capacity of the etching liquid is qualified or not according to a comparison result; therefore, the time for replacing the etching liquid can be accurately controlled, the etching liquid is prevented from being replaced under the condition that the etching liquid is not fully utilized, the waste of the etching liquid is avoided, and the waste liquid discharge is prevented from being increased.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A detection method is used for detecting the etching capacity of etching liquid, and is characterized by comprising the following steps:
providing a preset amount of etching liquid and providing the initial etching rate of the etching liquid;
providing a plurality of groups of semiconductor structures, providing the area of the top surface of a part to be etched in the semiconductor structures, and providing the thickness of the part to be etched of the semiconductor structures to provide a first preset thickness, wherein the number of the semiconductor structures in each group is at least one;
sequentially etching the plurality of groups of semiconductor structures through the etching liquid to remove the semiconductor structures with the first preset thickness;
obtaining the content of etching byproducts in the etching solution after each group of semiconductor structures is etched according to the first preset thickness and the area of the top surface of the removed part in the semiconductor structures;
obtaining the etching rate change value of the etching liquid according to the accumulated standing time of the etching liquid and the obtained content of the etching by-product;
and comparing the obtained etching rate change value with a threshold value, and judging whether the etching capacity of the etching liquid is qualified or not according to the comparison result.
2. The inspection method of claim 1, wherein the etch rate variation value is obtained according to the following formula:
△E＝△E1+△E2(ii) a Wherein, Delta E is represented by a value of a change in etching rate1Expressed as a first etch rate variation value,. DELTA.E2Expressed as a second etch rate change value.
3. The detection method of claim 2, wherein the first etch rate variation value is obtained according to the following equation:
△E1＝Q*K1wherein Q represents the content of etching by-products in the etching solution after etching each group of semiconductor structures, and K1Expressed as a first variation coefficient;
the second etching rate variation value is obtained by the following formula:
△E2＝T*K2wherein, K is2Expressed as a second coefficient of variation, and T is expressed as the cumulative standing time of the etching solution.
4. The detection method according to claim 3, wherein the content of the etching by-products in the etching solution after etching each group of the semiconductor structures is obtained according to the following formula:
Q1＝(P1*T1*A1)；
Qn＝(P1*T1*A1+…+Pn*Tn*An)；
wherein Q is1Expressed as the content of etch by-products, Q, in the etching solution after etching the first set of semiconductor structuresnExpressed as the content of etching byproducts in the etching solution after etching the nth group of semiconductor structures, P is expressed as the number of semiconductor structures in each group, T is expressed as the preset thickness, A is expressed as the area of the top surface of the removed part in one semiconductor structure, n is expressed as the serial number of each group of semiconductor structures, and n is more than or equal to 2.
5. The detecting method according to claim 3, wherein the first etching rate variation value is a difference between an etching rate at which the etching liquid is initially and an etching rate at which the etching liquid contains etching by-products, and the second etching rate is an absolute value of a difference between the etching rate at which the etching liquid is initially and the etching rate after the etching liquid is left for the accumulated holding time.
6. The detection method according to claim 3, wherein the first variation coefficient is obtained by a method comprising:
providing a preset amount of first test etching liquid;
providing a detection sheet for testing the etching rate of the first test etching liquid at the beginning;
etching the detection sheet for the first time through the first test etching liquid;
obtaining the initial etching rate of the first test etching liquid according to the first time and the thickness of the part of the detection sheet removed in the etching of the first time;
providing a plurality of semiconductor test structures, wherein the areas and the thicknesses of the top surfaces of the semiconductor test structures are the same;
etching the plurality of semiconductor test structures through the first test etching liquid to remove the semiconductor test structures with second preset thickness;
obtaining the content of etching byproducts in the first test etching solution after the plurality of semiconductor structures are etched according to the second preset thickness and the area of the top surface of the semiconductor test structure;
etching the test piece for a second time through the first test etching liquid;
obtaining the etching rate of the first test etching liquid containing etching byproducts according to the second time and the thickness of the part of the detection sheet removed in the etching at the second time;
obtaining a difference value between the initial etching rate of the first test etching liquid and the etching rate of the first test etching liquid containing byproducts to obtain a first etching rate difference value, and obtaining a first variation value coefficient according to the obtained content of the etching byproducts in the first test etching liquid and the first etching rate difference value; wherein the first variation coefficient is equal to a ratio of the first etching rate difference to a content of the etching by-product in the first etching solution.
7. The detection method according to claim 3, wherein the second variation coefficient is obtained by a method comprising:
providing a preset amount of second test etching liquid, and obtaining the initial etching rate of the second test etching liquid to obtain a first time etching rate;
placing the second test etching liquid for a preset time, and obtaining the etching rate of the test etching liquid after the second test etching liquid is placed for the preset time so as to obtain a second time etching rate;
obtaining a difference value between the first time etching rate and the second time etching rate to obtain a second etching rate difference value; and
obtaining a second variation value coefficient according to the obtained second etching rate difference value and the preset time; wherein the second variation coefficient is equal to a ratio of the preset time to the second etching rate difference.
8. The inspection method of claim 1, wherein comparing the obtained etch rate variation value to the first threshold value comprises:
comparing the obtained etching rate change value with a first threshold value, and if the etching rate change value is greater than or less than the first threshold value, determining that the etching capacity of the etching liquid is unqualified;
if the etching rate change value is equal to the first threshold value, further comparing the accumulated standing time of the etching liquid with a second threshold value, and if the accumulated standing time of the etching liquid is greater than the second threshold value, determining that the etching capacity of the etching liquid is unqualified; and the accumulated standing time of the etching liquid is the accumulated time of the etching liquid after being placed in the acid tank.
9. The detection method according to claim 8, wherein the etching liquid is replaced when the etching capability of the etching liquid is judged to be not satisfactory.
10. The detection method according to claim 8, wherein the first threshold value is 0.5-50% of the initial velocity of the etching solution, and the second threshold value is 1-240 h.
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