CN112921281A

CN112921281A - Sputtering system

Info

Publication number: CN112921281A
Application number: CN202011030503.5A
Authority: CN
Inventors: 朴瑨哲; 李昱镇; 金泰佑
Original assignee: Avaco Co Ltd
Current assignee: Avaco Co Ltd
Priority date: 2019-12-06
Filing date: 2020-09-27
Publication date: 2021-06-08
Also published as: KR102519337B1; KR20210071881A; KR20210071334A

Abstract

The present invention relates to a sputtering system comprising: a substrate transfer part for supplying a substrate to be subjected to a sputtering process and discharging the substrate having completed the sputtering process; a mounting part connected to the substrate transfer part for mounting the substrate supplied from the substrate transfer part to a carrier and separating the substrate having completed the sputtering process from the carrier; a sputtering part connected with the mounting part and used for carrying out the sputtering process on the substrate mounted on the loader; the water vapor pressure management part is connected with the mounting part and is used for adjusting the water vapor pressure of the loader provided with the substrate; and a conversion part connected with the water vapor pressure management part and the sputtering part, and supplying the carrier provided with the substrate to the sputtering part when the water vapor pressure of the carrier provided with the substrate passing through the water vapor pressure management part is within a preset reference water vapor pressure range.

Description

Sputtering system

Technical Field

The present invention relates to a sputtering system that performs a sputtering process such as an evaporation process on a substrate.

Background

Generally, in order to manufacture a display, a Solar Cell (Solar Cell), a semiconductor device, or the like, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate. For this, a substrate is subjected to a processing process, for example, an evaporation process of evaporating a thin film of a specific material on the substrate, a photolithography process of selectively exposing the thin film using a photosensitive material, an etching process of removing the selectively exposed portion of the thin film to form a pattern, and the like.

A sputtering system is provided for performing the treatment process on the substrate in this manner. The sputtering system is mainly used for the evaporation process of evaporating and plating a film on a substrate, and the sputtering process is implemented by adopting a physical evaporation mode.

The related art sputtering system includes a substrate transfer module, a mounting module, and a plurality of sputtering modules.

The substrate transfer module is used for carrying out substrate loading operation and substrate unloading operation. The substrate loading operation is to load a substrate to be subjected to the sputtering process. The substrate unloading operation is used for unloading the substrate which completes the sputtering process. The substrate loading operation and the substrate unloading operation are performed in an atmospheric state inside the substrate transfer module.

The mounting module is used for carrying out substrate mounting operation and substrate separation operation. The substrate mounting operation is to mount the substrate loaded through the substrate loading operation on a Carrier (Carrier). The substrate mounted on the carrier is loaded through the substrate loading operation. The substrate separating operation is to separate the substrate having completed the sputtering process from the carrier. The substrate on which the substrate separating operation is completed is unloaded through the unloading operation. The substrate mounting operation and the substrate separating operation are performed in an atmospheric state inside the mounting module.

The plurality of sputtering modules are used for carrying out a sputtering process on the substrate mounted on the carrier. The substrates mounted on the carrier are supplied by a substrate loading operation by the substrate transfer module and a substrate mounting operation by the mounting module. The substrate on which the sputtering process is completed may be unloaded by a substrate separating operation performed by the mounting module and a substrate unloading operation performed by the substrate transfer module after being discharged to the mounting module in a state of being mounted on the carrier. The plurality of sputtering modules perform the sputtering process with the inside thereof being in a vacuum state. A connection chamber is arranged between the plurality of sputtering modules and the installation module, and the interior of the connection chamber is switched between a vacuum state and an atmospheric state.

In the sputtering system of the prior art, the interior of the installation module is in an atmospheric state, and therefore, the carrier absorbs moisture in the atmosphere, which inevitably results in an increase in the vapor pressure of the carrier. Therefore, in the sputtering system of the related art, Out-gassing (Out-gassing), moisture, and the like discharged from the carrier adversely affect the sputtering process, and thus, there is a problem in that the quality of the substrate on which the sputtering process is performed is degraded.

Disclosure of Invention

Technical problem

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a sputtering system capable of preventing the quality of a substrate subjected to a sputtering process from being degraded due to an increase in the vapor pressure of a carrier.

Technical scheme

In order to solve the above technical problem, the present invention may include the following structure.

The sputtering system of the present invention may include: a substrate transfer part for supplying a substrate to be subjected to a sputtering process and discharging the substrate having completed the sputtering process; a mounting part connected to the substrate transfer part for mounting the substrate supplied from the substrate transfer part to a carrier and separating the substrate having completed the sputtering process from the carrier; a sputtering part connected with the mounting part and used for carrying out the sputtering process on the substrate mounted on the loader; the water vapor pressure management part is connected with the mounting part and is used for adjusting the water vapor pressure of the loader provided with the substrate; and a conversion part respectively connected with the water vapor pressure management part and the sputtering part, and supplying the loader provided with the substrate to the sputtering part when the water vapor pressure of the loader provided with the substrate passing through the water vapor pressure management part is within a preset reference water vapor pressure range.

Advantageous effects

According to the present invention, the following effects can be achieved.

The invention can adjust the water vapor pressure of the loader provided with the substrate, thereby reducing the influence of degassing, moisture and the like discharged by the loader on the sputtering process. Therefore, the invention can improve the quality of the substrate after the sputtering process is finished.

Drawings

FIG. 1 is a schematic block diagram of a sputtering system of the present invention.

Fig. 2 is a schematic block diagram of a substrate transfer unit and a mounting unit in the sputtering system of the present invention.

FIG. 3 is a detailed block diagram of the sputtering system of the present invention.

Fig. 4 and 5 are schematic block diagrams of a water vapor pressure management unit in the sputtering system according to the present invention.

Fig. 6 to 8 are schematic block diagrams of a changeover portion and a carrier transport portion in the sputtering system of the present invention.

Fig. 9 is a schematic block diagram of a carrier management section in the sputtering system of the present invention.

Fig. 10 is a plan view showing an example of the sputtering system of the present invention.

Reference numerals

1: the sputtering system 100: substrate transfer unit

200: mounting portion 300: steam pressure management part

400: the conversion section 500: sputtering section

600: carrier transport section 700: storage box

800: the update unit 900: carrier management section

Detailed Description

Hereinafter, an embodiment of a sputtering system according to the present invention will be described in detail with reference to the drawings.

Referring to fig. 1, a sputtering system 1 of the present invention performs a sputtering process on a substrate for manufacturing a display, a Solar Cell (Solar Cell), a semiconductor device, or the like. The sputtering system 1 of the present invention may include a substrate transfer part 100, a mounting part 200, a water vapor pressure management part 300, a conversion part 400, and a sputtering part 500. Before the substrate transfer unit 100, the mounting unit 200, the steam pressure management unit 300, the converting unit 400, and the sputtering unit 500 are described in detail, a flow of transferring the substrate in the sputtering system 1 according to the present invention will be described below.

First, the substrate transfer part 100 loads the substrate to be subjected to the sputtering process, and the mounting part 200 mounts the substrate to a Carrier (Carrier).

Then, when the carrier on which the substrate is mounted is supplied to the water vapor pressure managing part 300, the water vapor pressure managing part 300 adjusts the water vapor pressure of the carrier on which the substrate is mounted. The water vapour pressure may be derived from the respective water contents (H) of the substrate and the carrier₂0) Amount and oxygen (O)₂) And (4) determining the amount.

Then, when the carrier mounted with the substrate, the moisture pressure of which is adjusted, is supplied to the converting part 400, the converting part 400 supplies the carrier mounted with the substrate to the sputtering part 500 when the moisture pressure of the carrier mounted with the substrate is within a preset reference moisture pressure range. The reference water vapor pressure range is a water vapor pressure range required for the substrate having completed the sputtering process to have a quality higher than a predetermined level, and may be set by an operator in advance. The reference water vapor pressure range may be derived by a previous test or the like.

Then, when the carrier mounted with the substrate is supplied to the sputtering section 500, the sputtering section 500 performs the sputtering process on the substrate mounted with the carrier.

Then, after the sputtering process is completed, when the carrier on which the substrate is mounted is supplied to the mounting part 200, the substrate transfer part 100 unloads the substrate on which the sputtering process is completed after separating the substrate on which the sputtering process is completed from the carrier. The empty carrier is loaded with a new substrate as it is separated.

As described above, the sputtering system 1 of the present invention can transfer the substrate and perform the sputtering process on the substrate.

The substrate transfer unit 100, the mounting unit 200, the steam pressure management unit 300, the converting unit 400, and the sputtering unit 500 will be described in detail below with reference to the drawings.

Referring to fig. 1 and 2, the substrate transfer part 100 is used to perform a substrate loading operation and a substrate unloading operation. The substrate transfer part 100 can perform the substrate loading operation to supply the substrate to be subjected to the sputtering process. The substrate transfer part 100 can perform the substrate unloading operation to discharge the substrate on which the sputtering process is completed.

The substrate transfer part 100 may include a substrate loading module 110, a substrate unloading module 120, and a substrate transfer module 130.

The substrate loading module 110 is used to load the substrate to be subjected to the sputtering process. The substrate loading module 110 may load the substrate in a horizontal state. The inside of the substrate loading module 110 can be switched between an atmospheric state and a vacuum state.

The substrate unloading module 120 is used to discharge the substrate on which the sputtering process is completed. The substrate unloading module 120 can discharge the substrate in a horizontal state. The inside of the substrate unloading module 120 can be switched between an atmospheric state and a vacuum state.

The substrate transfer module 130 is used to transfer a substrate to perform the substrate loading operation and the substrate unloading operation. The substrate transfer module 130 may be connected to the substrate loading module 110, the substrate unloading module 120, and the mounting part 200, respectively.

The substrate transfer module 130 may perform the substrate loading operation in such a manner that the substrate to be subjected to the sputtering process is transferred from the substrate loading module 110 to the mounting part 200. The substrate transfer module 130 may perform a substrate mounting operation in such a manner that the substrate to be subjected to the sputtering process is mounted on the carrier at the mounting part 200.

The substrate transfer module 130 may perform the substrate unloading operation in such a manner that the substrate on which the sputtering process is completed is transferred from the mounting part 200 to the substrate unloading module 120. The substrate transfer module 130 may perform a substrate separating operation in such a manner that the substrate having completed the sputtering process is separated from the carrier at the mounting part 200.

The substrate transfer module 130 may include a substrate transfer robot (not shown) for transferring the substrate to perform these operations.

The inside of the substrate transfer module 130 can be continuously maintained in a vacuum state without being converted into an atmospheric state. At this time, the substrate transfer module 130 can perform the substrate loading operation after the substrate loading module 110 is converted into the vacuum state. After the substrate unloading module 120 is converted into the vacuum state, the substrate transfer module 130 can perform the substrate unloading operation. Accordingly, the inside of the substrate transfer module 130 can continuously maintain a vacuum state and perform the substrate loading operation, the substrate unloading operation, the substrate mounting operation, and the substrate separating operation.

Therefore, the sputtering system 1 of the present invention does not convey the carrier in the space in the atmospheric state, but conveys the carrier only in the space in the vacuum state and performs the sputtering process. Therefore, the sputtering system 1 of the present invention can reduce the degree to which the carrier adsorbs moisture or the like in the atmosphere to increase the vapor pressure of the carrier. Therefore, the sputtering system 1 of the present invention can reduce the influence of Out-gassing (Out-gassing), moisture, and the like discharged from the carrier on the sputtering process, and can improve the quality of the substrate on which the sputtering process has been completed.

Referring to fig. 1 to 3, the mounting part 200 is used for the substrate mounting operation and the substrate separating operation. The substrate transfer module 130 can mount the substrate to be subjected to the sputtering process on the carrier supported by the mounting part 200 in a state where the mounting part 200 supports the empty carrier. The substrate transfer module 130 can separate the substrate having completed the sputtering process from the carrier supported by the mounting part 200 in a state where the carrier having the substrate having completed the sputtering process mounted thereon is supported by the mounting part 200. The inside of the mounting part 200 can be continuously maintained in a vacuum state without being converted into an atmospheric state. The mounting part 200 may be connected to the substrate transfer part 100, the water vapor pressure management part 300, and the sputtering part 500.

The mounting portion 200 may include a mounting module 210. The mounting module 210 is used to support the carrier. The carrier may be an empty carrier or a carrier with a substrate mounted thereon. The mounting module 210 can support the carrier in a horizontal state.

The mounting portion 200 may include a conversion module 220. The transition module 220 is capable of transitioning the carrier between a horizontal state and a vertical state. The conversion module 220 is capable of rotating the mounting module 210 to convert the carrier between a horizontal state and a vertical state. When the converting module 220 converts the carrier into the horizontal state, the substrate mounting operation and the substrate separating operation can be performed. The carrier on which the substrate is mounted can be supplied from the mounting module 210 to the steam pressure controller 300 in a vertical state by the conversion module 220. The carrier on which the substrate is mounted can be supplied from the sputtering unit 500 to the mounting module 210 in a vertical state by the conversion module 220. On the other hand, the carrier on which the substrate is mounted or the empty carrier can be transferred in a horizontal state among the water vapor pressure managing part 300, the converting part 400, and the sputtering part 500.

Referring to fig. 1 to 4, the water vapor pressure management part 300 is to adjust the water vapor pressure of the carrier on which the substrate is mounted. In the sputtering system 1 of the present invention, since the vapor pressure of the carrier on which the substrate is mounted can be reduced by the vapor pressure managing section 300, the influence of the outgas, moisture, and the like discharged from the carrier on the sputtering process can be further reduced. Therefore, the sputtering system 1 of the present invention can further improve the quality of the substrate on which the sputtering process has been completed. The steam pressure management unit 300 may be connected to the installation unit 200 and the conversion unit 400, respectively. The inside of the steam pressure managing part 300 can continuously maintain the vacuum state without being converted into the atmospheric state.

The water vapor pressure managing part 300 may include a loading chamber 310, a plurality of managing chambers 320, a loading measuring mechanism 330, and a management controlling mechanism 340.

The loading chamber 310 is connected to the mounting part 200. The carrier on which the substrate is mounted may be supplied from the mounting part 200 to the loading chamber 310. The loading chamber 310 may supply a carrier on which the substrate is mounted to any one of the plurality of the management chambers 320. At this time, a management chamber receiving the carrier mounted with the substrate from the loading chamber 310 is connected to the loading chamber 310.

Each of the plurality of management chambers 320 is configured to regulate a water vapor pressure of a carrier on which the substrate is mounted. Each of the management chambers 320 is capable of performing at least one of exhausting internal gas and heating for raising an internal temperature to adjust a water vapor pressure of a carrier on which the substrate is mounted. The exhaust mechanism provided in each of the management chambers 320 can exhaust the internal gas. The higher the exhaust flow rate of the internal gas, the lower the vapor pressure of the carrier on which the substrate is mounted. The heating for raising the internal temperature can be performed by the heating mechanism provided in each of the management chambers 320. The higher the heating temperature for raising the internal temperature, the more the water vapor pressure of the carrier on which the substrate is mounted can be reduced. Each of the management chambers 320 may include at least one of the exhaust mechanism and the heating mechanism. A plurality of the management chambers 320 may be connected to each other. Accordingly, the carrier mounted with the substrate can be transferred in a transfer direction (SM arrow direction) and sequentially pass through the plurality of the management chambers 320. In fig. 4 and 5, the steam pressure manager 300 includes three

management chambers

320, 320', and 320 ″, but is not limited thereto, and the steam pressure manager 300 may include two or more than four management chambers 320.

The load measuring mechanism 330 is used to measure the water vapor pressure of the carrier on which the substrate is mounted, which is supplied to the load chamber 310. After the carrier on which the substrate is mounted is supplied to the loading chamber 310, the load measuring mechanism 330 measures the water vapor pressure inside the loading chamber 310, thereby measuring the water vapor pressure of the carrier on which the substrate is mounted. At this time, the load measuring mechanism 330 can also calculate the water vapor pressure of the carrier mounted with the substrate by subtracting the water vapor pressure after the carrier mounted with the substrate is supplied to the loading chamber 310 from the water vapor pressure before the carrier mounted with the substrate is supplied to the loading chamber 310. The load measuring mechanism 330 can measure the water vapor pressure of the carrier on which the substrate is mounted using a Residual Gas Analyzer (RGA). The loading measurement mechanism 330 may be disposed inside the loading chamber 310 or outside the loading chamber 310.

The management control means 340 controls the adjustment amount of the water vapor pressure in each management chamber 320 according to the water vapor pressure measured by the load measuring means 330. The management control means 340 can control each of the management chambers 320 according to the water vapor pressure measured by the load measuring means 330 to adjust at least one of an exhaust flow rate of the inside gas exhausted from each of the management chambers 320 and a heating temperature for raising the inside temperature. Accordingly, the carrier on which the substrate is mounted can sequentially pass through the plurality of management chambers 320 and gradually adjust the water vapor pressure thereof. Therefore, the sputtering system 1 of the present invention can distribute the adjustment amount required to adjust the vapor pressure of the carrier on which the substrate is mounted to each of the management chambers 320 to perform adjustment. In the sputtering system 1 according to the present invention, the time required for the steam pressure management unit 300 to adjust the steam pressure can be allocated to each of the management chambers 320 according to the process time for performing the sputtering process in the sputtering unit 500, and the like. Therefore, the sputtering system 1 of the present invention does not increase the total process time or can reduce the degree of increase in the total process time even if the steam pressure is adjusted by the steam pressure management part 300.

By preventing the moisture pressure of the carrier on which the substrate is mounted from being sharply adjusted in a short time, it is possible to prevent the substrate and the carrier from being deformed or the like. The management control means 340 can control at least one of the exhaust means and the heating means provided in each of the management chambers 320. When the management control means 340 controls the exhaust means, the management control means 340 can control the exhaust means by an Automatic Pressure Controller (APC) according to the water vapor Pressure measured by the load measurement means 330.

The management control mechanism 340 may include a management setting module 341 and a management control module 342.

The management setting module 341 is configured to set an adjustment amount of the management chamber 320 for adjusting the water vapor pressure. When the water vapor pressure measured by the load measuring mechanism 330 is higher than the maximum value of the reference water vapor pressure range, the management setting module 341 can set the adjustment amount of each of the management chambers 320 according to the water vapor pressure measured by the load measuring mechanism 330. The management setting module 341 sets the adjustment amount of each of the management chambers 320 based on the vapor pressure measured by the load measuring unit 330, using the reference data in which the adjustment amount of each of the management chambers 320 is matched to each of the vapor pressures measured by the load measuring unit 330. The reference data is derived by a previous test or the like, and may be stored in the management setting module 341 by an operator in advance. The management setting module 341 may set at least one of an exhaust flow rate at which each of the management chambers 320 exhausts the internal gas and a heating temperature at which the internal temperature is raised, according to the water vapor pressure measured by the load measuring mechanism 330. The set values set by the management setting module 341 for the respective management chambers 320 may be the same value as each other or different values from each other.

The management control module 342 is capable of controlling the plurality of management chambers 320 according to the set values set by the management setting module 341. The management control module 342 is capable of controlling at least one of the exhaust mechanism and the heating mechanism of each of the management chambers 320 according to the set value set by the management setting module 341. Accordingly, it is possible to pass the carrier, on which the substrate is mounted, through the plurality of management chambers 320 and sequentially reduce the water vapor pressure thereof.

In this manner, when the management setting module 341 sets the adjustment amount of each of the management chambers 320 based on the steam pressure measured by the load measuring mechanism 330, the steam pressure management unit 300 can control each of the management chambers 320 according to the set value without confirming the degree of adjustment of the steam pressure of each of the management chambers 320 with respect to the carrier on which the substrate is mounted.

The steam pressure controller 300 may check the degree of adjustment of the steam pressure of the substrate carrier in each of the control chambers 320, and correct the set value set in each of the control chambers 320 according to the check result. For this, as shown in fig. 5, the water vapor pressure managing part 300 may include a plurality of management measuring means 350.

Each of the management measuring mechanisms 350 is used to measure the water vapor pressure of the carrier on which the substrate is mounted, which is supplied to the management chamber 320. Each of the management measuring means 350 measures the water vapor pressure in the same manner as the loading measuring means 330, and thus, a detailed description thereof is omitted. The water vapor pressure managing part 300 may include the same number of management measuring mechanisms 350 as the management chambers 320. Fig. 5 shows that the water vapor pressure managing part 300 includes three managing

chambers

320, 320', 320 "and three managing measuring

mechanisms

350, 350', 350", but is not limited thereto, and the water vapor pressure managing part 300 may include two or more than four managing chambers 320 and managing measuring mechanisms 350.

When the plurality of management measuring mechanisms 350 are provided, the management setting module 341 may set a target reduction value for each of the management chambers 320 according to the water vapor pressure measured by the loading measuring mechanism 330, so that the water vapor pressure is sequentially reduced when the carrier on which the substrate is mounted passes through the plurality of management chambers 320. The management setting module 341 can set a target reduction value for each of the management chambers 320 based on the water vapor pressure measured by the load measuring mechanism 330 using the reference data.

In this case, the management control mechanism 340 may further include a management correction module 343. The management correction module 343 corrects the target reduction value set to each of the management chambers 320 by the management setting module 341 using the water vapor pressure measured by each of the management measuring means 350. The details thereof are as follows.

First, after the previous management chamber 320 adjusts the water vapor pressure of the carrier on which the substrate is mounted corresponding to the target reduction value set by the management setting module 341, it is supplied to the next management chamber 320'. The former management chamber 320 and the latter management chamber 320' are disposed in the former and latter with reference to the transfer direction (SM arrow direction) of the carrier on which the substrate is mounted.

Then, when the carrier on which the substrate is mounted is supplied to the subsequent management chamber 320', the management measuring mechanism 350 can measure the water vapor pressure of the carrier on which the substrate is mounted, which is located in the subsequent management chamber 320'.

Then, the management correction module 343 can compare the target reduction value set in the previous management chamber 320 with the water vapor pressure of the carrier mounted with the substrate measured by the management measurement mechanism 350 in the next management chamber 320'. When the comparison result shows that the target reduction value is different from the water vapor pressure measured by the management measuring mechanism 350, the management correcting module 343 can correct the target reduction value of the next management chamber 320'. In this case, the management correction module 343 may correct the target decrease value of the subsequent management chamber 320 'so as to increase or decrease at least one of the exhaust flow rate and the heating temperature of the subsequent management chamber 320'. When a plurality of management chambers 320', 320 "are disposed behind the previous management chamber 320, the management compensation module 343 can compensate the target reduction value set to all of the plurality of management chambers 320', 320" located behind. On the other hand, when the comparison result shows that the target reduction value is the same as the water vapor pressure measured by the management measuring mechanism 350, the management correction module 343 can maintain the original value without correcting the target reduction value of the subsequent management chamber 320'.

Then, the management control module 342 can control the plurality of management chambers 320 according to the target reduction value set by the management setting module 341 or the target reduction value corrected by the management correction module 343.

In this manner, the steam pressure controller 300 can check the degree of adjustment of the steam pressure in each of the control chambers 320 with respect to the carrier on which the substrate is mounted, and can correct and control the set value set for each of the control chambers 320 based on the check result. Therefore, the sputtering system 1 of the present invention can improve the accuracy of the operation of adjusting the water vapor pressure of the carrier on which the substrate is mounted to within the reference water vapor pressure range.

Referring to fig. 1 to 7, the converting part 400 is connected to the steam pressure managing part 300 and the sputtering part 500. When the water vapor pressure of the carrier mounted with the substrate passing through the water vapor pressure managing part 300 is within the reference water vapor pressure range, the converting part 400 supplies the carrier mounted with the substrate to the sputtering part 500. When the water vapor pressure of the carrier mounted with the substrate passing through the water vapor pressure managing part 300 exceeds the reference water vapor pressure range, the converting part 400 does not supply the carrier mounted with the substrate to the sputtering part 500. Therefore, the sputtering system 1 of the present invention can perform the sputtering process only on the carrier with the substrate mounted thereon having the water vapor pressure within the reference water vapor pressure range. Therefore, the sputtering system 1 of the present invention can improve the quality of the substrate on which the sputtering process has been completed.

The converting part 400 may include a converting chamber 410, a conversion measuring mechanism 420, and a conversion judging mechanism 430.

The switching chamber 410 is connected to the steam pressure managing part 300. Accordingly, the carrier on which the substrate is mounted can be supplied to the converting chamber 410 through the water vapor pressure managing part 300. The last management chamber 320 among the plurality of management chambers 320 of the steam pressure management part 300 may be connected to the switching chamber 410.

The converting measurement mechanism 420 is capable of measuring the water vapor pressure of the substrate-mounted carrier received by the converting chamber 410. The switching measuring mechanism 420 measures the water vapor pressure in the same manner as the loading measuring mechanism 330, and thus detailed description thereof is omitted.

The switching determination means 430 is configured to determine whether the water vapor pressure measured by the switching measurement means 420 is within the reference water vapor pressure range. The reference water vapor pressure range may be derived by a preliminary test or the like and stored in the conversion determination means 430 in advance. When the switching determination means 430 determines that the vapor pressure of the carrier on which the substrate is mounted is within the reference vapor pressure range, the switching chamber 410 can supply the carrier on which the substrate is mounted to the sputtering section 500. When the switching determination mechanism 430 determines that the water vapor pressure of the carrier on which the substrate is mounted exceeds the reference water vapor pressure range, the switching chamber 410 can discharge the carrier on which the substrate is mounted to the carrier transfer portion 600. The carrier transfer part 600 is used to manage carriers.

Referring to fig. 1 to 6, the sputtering portion 500 is used to perform the sputtering process. The sputtering part 500 may be connected to the mounting part 200 and the converting part 400, respectively. When the carrier mounted with the substrate is received from the converting part 400, the sputtering part 500 can perform the sputtering process on the substrate mounted with the carrier. When the sputtering process is completed, the sputtering part 500 can supply the carrier on which the substrate is mounted to the mounting part 200. In the mounting part 200, after the substrate separating operation of separating the substrate from the carrier is performed, the substrate mounting operation of mounting a new substrate on the empty carrier is performed. The sputtering portion 500 can continuously maintain a vacuum state without being converted into an atmospheric state.

The sputtering unit 500 and the steam pressure management unit 300 may be opposed to each other. When the water vapor pressure managing part 300 transfers the carrier mounted with the substrate in the transfer direction (SM arrow direction) and adjusts the water vapor pressure, the sputtering part 500 can transfer the carrier mounted with the substrate in the opposite direction of the transfer direction (SM arrow direction) and perform the sputtering process.

The sputtering section 500 may include a process chamber 510 and an unload chamber 520.

The process chamber 510 is used to perform the sputtering process. The process chamber 510 may be connected to the transfer part 400 and the unloading chamber 520, respectively. The sputtering section 500 may also include a plurality of the process chambers 510. Although not shown, the sputtering portion 500 may further include a buffer chamber. The buffer chamber may be located between the unload chamber 520, the process chamber 510, and the transfer portion 400.

The unloading chamber 520 is used to unload the carrier mounted with the substrate, on which the sputtering process is completed, to the mounting part 200. The unload chamber 520 may be coupled to the process chamber 510 and the mounting portion 200.

Referring to fig. 1 to 7, the sputtering system 1 of the present invention may include a carrier transfer part 600.

The carrier transfer part 600 is connected to the converting part 400. When the water vapor pressure of the carrier on which the substrate is mounted exceeds the reference water vapor pressure range, the converting part 400 can discharge the carrier on which the substrate is mounted to the carrier transferring part 600.

The carrier transfer section 600 may include a carrier discharge chamber 610 and a carrier supply chamber 620.

The carrier discharge chamber 610 is connected to the converting part 400. The carrier discharge chamber 610 may be connected to the magazine 700. The magazine 700 is used to store carriers on which the substrates are mounted. The magazine 700 can further store empty carriers. When the converting part determines that the moisture pressure of the carrier mounted with the substrate exceeds the reference moisture pressure range, the carrier mounted with the substrate is discharged from the converting part 400 to the magazine 700 through the carrier discharge chamber 610. The cartridge 700 can continuously maintain an atmospheric state or a vacuum state. When the magazine 700 maintains the atmospheric state, the carrier transfer part 600 can be switched between the atmospheric state and the vacuum state. When the magazine 700 maintains the vacuum state, the carrier transfer part 600 can continuously maintain the vacuum state without being converted into the atmospheric state.

The carrier supply chamber 620 serves to supply the carriers supplied from the magazine 700 to the converting part 400. When the carrier mounted with the substrate is discharged to the magazine 700 through the carrier discharge chamber 610, the carrier supply chamber 620 can supply an empty carrier to the transfer portion 400, thereby performing a carrier exchange operation.

The carrier transport 600 may include a feed measurement mechanism 630.

The supply measurement mechanism 630 is used to measure the water vapor pressure of the carrier received by the carrier supply chamber 620. The supply measurement mechanism 630 is capable of measuring the water vapor pressure inside the carrier supply chamber 620, and thus the water vapor pressure of the carrier, after the carrier is received by the carrier supply chamber 620. At this time, the supply measuring mechanism 630 can also calculate the water vapor pressure of the carrier by subtracting the water vapor pressure of the carrier supply chamber 620 after receiving the carrier from the water vapor pressure of the carrier supply chamber 620 before receiving the carrier. The supply measurement mechanism 630 can measure the water vapor pressure of the carrier using a Residual Gas Analyzer (RGA). The carrier supply chamber 620 can supply the carrier to the converting part 400 when the water vapor pressure measured by the supply measuring mechanism 630 is within a preset reference carrier water vapor pressure range. The reference carrier water vapor pressure range is a water vapor pressure range of the carrier in which the substrate having completed the sputtering process has a quality of a prescribed level or more, and may be set by an operator in advance. The reference carrier water vapor pressure range may be derived by prior testing or the like.

The carrier transport 600 may include a feed control mechanism 640. The supply control mechanism 640 is used for controlling the adjustment amount of the steam pressure of the carrier supply chamber 620 according to the steam pressure measured by the supply measuring mechanism 630.

When the water vapor pressure measured by the supply measuring mechanism 630 is higher than the reference carrier water vapor pressure range, the supply control mechanism 640 can control the carrier supply chamber 620 so that the carrier supply chamber 620 adjusts at least one of the exhaust flow rate of the exhaust internal gas and the heating temperature for raising the internal temperature. The supply control means 640 may control the carrier supply chamber 620 such that at least one of the exhaust flow rate and the heating temperature of the carrier supply chamber 620 is increased as the water vapor pressure measured by the supply measurement means 630 is increased. The supply control mechanism 640 can control at least one of the exhaust mechanism and the heating mechanism that the carrier supply chamber 620 has. When the supply control mechanism 640 controls the exhaust mechanism, the supply control mechanism 640 can control the exhaust mechanism using the Automatic Pressure Controller (APC) and according to the water vapor pressure measured by the supply measurement mechanism 630.

When the water vapor pressure measured by the supply measuring mechanism 630 is lower than the reference carrier water vapor pressure range, the supply control mechanism 640 can control the carrier supply chamber 620 to adjust the supply flow rate of the outside air supplied to the carrier supply chamber 620. The supply control means 640 may control the carrier supply chamber 620 such that the supply flow rate of the carrier supply chamber 620 is increased as the steam pressure measured by the supply measurement means 630 is decreased. The supply control mechanism 640 can control the supply mechanism that the carrier supply chamber 620 has. The supply mechanism is used to supply external air to the interior of the carrier supply chamber 620. The external gas may contain moisture (H)₂O) oxygen (O)₂). The supply control means 640 can control the supply means based on the water vapor pressure measured by the supply measurement means 630 by using a Mass Flow Controller (MFC).

The carrier supply chamber 620 may supply the carrier to the converting part 400 when the water vapor pressure measured by the supply measuring mechanism 630 is within the reference carrier water vapor pressure range. The carrier received by the converting part 400 is supplied to the mounting part 200 through the sputtering part 500, and the substrate is mounted on the mounting part 200.

In this manner, the carrier transport unit 600 can supply the new carrier to the conversion unit 400 after adjusting the steam pressure of the new carrier to be within the reference carrier steam pressure range. Therefore, even if the carrier is replaced, the sputtering system 1 of the present invention can easily perform the operation of adjusting the steam pressure within the reference steam pressure range by the steam pressure managing section 300 after the substrate is mounted on the replaced carrier.

Referring to fig. 1 to 8, the carrier discharge chamber 610 can adjust the water vapor pressure of the carrier mounted with the substrate supplied from the converting part 400. The carrier discharge chamber 610 can perform at least one of exhaust of internal gas and heating for raising the internal temperature to adjust the water vapor pressure of the carrier on which the substrate is mounted. The exhaust of the internal gas can be performed by an exhaust mechanism provided in the carrier exhaust chamber 610. The higher the exhaust flow rate of the internal gas, the lower the vapor pressure of the carrier on which the substrate is mounted. The heating to raise the internal temperature can be performed by a heating mechanism provided in the carrier discharge chamber 610. The higher the heating temperature for raising the internal temperature, the more the water vapor pressure of the carrier on which the substrate is mounted can be reduced. The carrier discharge chamber 610 may include at least one of the exhaust mechanism and the heating mechanism.

At this time, the carrier transfer part 600 may include a discharge measuring mechanism 650.

The discharge measurement mechanism 650 is configured to measure the water vapor pressure of the carrier on which the substrate is mounted, which is located in the carrier discharge chamber 610, after the carrier discharge chamber 610 adjusts the water vapor pressure of the carrier on which the substrate is mounted. The discharge measurement mechanism 650 can also calculate the water vapor pressure of the carrier on which the substrate is mounted, which is located in the carrier discharge chamber 610, by subtracting the water vapor pressure after the carrier discharge chamber 610 adjusts the water vapor pressure of the carrier on which the substrate is mounted from the water vapor pressure before the carrier discharge chamber 610 adjusts the water vapor pressure of the carrier on which the substrate is mounted. The discharge measurement mechanism 650 can measure the water vapor pressure of the carrier on which the substrate is mounted using a Residual Gas Analyzer (RGA).

When the water vapor pressure measured by the discharge measurement mechanism 650 is within the reference water vapor pressure range, the carrier discharge chamber 610 can supply the carrier on which the substrate is mounted to the converting part 400. The switching unit 400 can measure the vapor pressure of the carrier on which the substrate is mounted by the switching measurement means 420, and can supply the carrier on which the substrate is mounted to the sputtering unit 500 when the switching determination means 430 determines that the vapor pressure of the carrier on which the substrate is mounted is within the reference vapor pressure range. Therefore, the sputtering system 1 of the present invention can extend the replacement cycle of the carrier by adjusting the water vapor pressure of the carrier mounted with the substrate received by the carrier discharge chamber 610, so that the running cost can be reduced.

When the water vapor pressure measured by the discharge measurement mechanism 650 is higher than the maximum value of the reference water vapor pressure range, the carrier discharge chamber 610 can repeat at least one of the exhaust of the internal gas and the heating to raise the internal temperature according to the water vapor pressure measured by the discharge measurement mechanism 650. At this time, the carrier discharge chamber 610 can repeat at least one of the exhausting of the internal gas and the heating for raising the internal temperature according to the water vapor pressure measured by the discharge measuring mechanism 650 until a preset suspension condition is satisfied. The preset suspension condition is at least one of the following two conditions: a preset reference time elapses from when the carrier mounted with the substrate is supplied to the carrier discharge chamber 610; and the steam pressure managing part 300 or the converting part 400 judges that the steam pressure of the carrier (referred to as a second carrier) mounted with another substrate is out of the reference steam pressure range in a state where the carrier (referred to as a first carrier) mounted with the substrate is located in the carrier discharge chamber 610. The steam pressure management unit 300 or the converting unit 400 determines that the steam pressure of the second carriage exceeds the reference steam pressure range, and the loading chamber 310, the management chamber 320, or the converting chamber 410 determines that the steam pressure of the second carriage exceeds the reference steam pressure range. At this time, the adjustment of the water vapor pressure of the first carrier located in the carrier discharge chamber 610 may be stopped and the first carrier may be discharged to drop the second carrier into the carrier discharge chamber 610. Therefore, the sputtering system 1 of the present invention can prevent the extension of the replacement time of the carrier caused by the unnecessary repetition of the adjustment operation of the vapor pressure of the carrier on which the substrate is mounted in the carrier discharge chamber 610.

When the water vapor pressure measured by the discharge measuring mechanism 650 is lower than the minimum value of the reference water vapor pressure range, the carrier discharge chamber 610 discharges the carrier mounted with the substrate to the storage cassette 700 without adjusting the water vapor pressure of the carrier mounted with the substrate.

On the other hand, when the water vapor pressure measured by the switching measurement mechanism 420 is higher than the maximum value of the reference water vapor pressure range and higher than a preset reference discharge value, the carrier discharge chamber 610 discharges the carrier mounted with the substrate to the storage cassette 700 without adjusting the water vapor pressure of the carrier mounted with the substrate. Therefore, the sputtering system 1 of the present invention can prevent the unnecessary adjustment operation of the vapor pressure of the carrier on which the substrate is mounted in the carrier discharge chamber 610, thereby preventing the replacement time delay of the carrier. The reference discharge value is a steam pressure that is difficult to adjust to within the reference steam pressure range by adjusting the steam pressure, and may be set in advance by an operator. The reference discharge value may be a value greater than the maximum value of the reference water vapor pressure range. The reference discharge value may be derived by a prior test or the like and stored in advance in the carrier discharge chamber 610. The carrier discharge chamber 610 can adjust the water vapor pressure of the carrier on which the substrate is mounted when the water vapor pressure measured by the conversion measuring mechanism 420 is higher than the maximum value of the reference water vapor pressure range and is lower than a preset reference discharge value.

Referring to fig. 1 to 8, the sputtering system 1 of the present invention may include an update section 800 (shown in fig. 3).

The updating unit 800 is configured to update the reference data of the adjustment amount of the steam pressure in each of the management chambers 320 based on the steam pressure measured by the load measuring mechanism 330. The updating unit 800 can update the reference data using a change amount of the steam pressure generated by the empty carrier due to the steam pressure being adjusted when the empty carrier passes through the steam pressure managing unit 300, and a change amount of the steam pressure generated by the carrier on which the substrate is mounted due to the steam pressure being adjusted when the carrier on which the substrate is mounted passes through the steam pressure managing unit 300. Therefore, the management setting module 341 can set the adjustment amount of each of the management chambers 320 according to the water vapor pressure measured by the load measuring mechanism 330, using the reference data updated by the updating unit 800. Therefore, the sputtering system 1 of the present invention can further improve the accuracy of the operation of adjusting the water vapor pressure of the carrier on which the substrate is mounted to within the reference water vapor pressure range.

Referring to fig. 1-9, a sputtering system 1 of the present invention can include a carrier management section 900 (shown in fig. 9).

The carrier management section 900 is used to manage the service life of the carrier. The carrier management part 900 can detect a carrier that reaches a lifetime as being repeatedly used for the sputtering process using the water vapor pressure. Therefore, the sputtering system 1 of the present invention can prevent the carrier with a service life from being used in the sputtering process and causing a defective product.

The carrier management part 900 may include a storage module 910, a substrate water vapor pressure calculation module 920, a carrier water vapor pressure calculation module 930, and a determination module 940.

The storage module 910 is used for storing the water vapor pressure of the empty carrier measured by the unloading measuring mechanism 530. The unloaded carrier is not subjected to the sputtering process. For example, the empty carriers are supplied to the unload chamber 520 through the magazine 700, the carrier transfer part 600, and the process chamber 510 in which the sputtering process is not performed. The discharge measurement mechanism 530 is used to measure the vapor pressure of the empty carrier in the discharge chamber 520. The unloading measuring mechanism 530 is capable of measuring the water vapor pressure inside the unloading chamber 520, and thus the water vapor pressure of the empty carrier located in the unloading chamber 520. At this point, the unload measurement mechanism 530 can calculate the water vapor pressure of the empty carrier by subtracting the water vapor pressure of the unload chamber 520 after receiving the empty carrier from the water vapor pressure of the unload chamber 520 before receiving the empty carrier. The unload measurement mechanism 530 is capable of measuring the vapor pressure of the unloaded carrier using a Residual Gas Analyzer (RGA). The water vapor pressure stored in the empty carrier of the storage module 910 may be an average of a plurality of water vapor pressures measured with a plurality of carriers.

The substrate water vapor pressure calculating module 920 is configured to calculate the water vapor pressure of the substrate. The substrate vapor pressure calculation module 920 can calculate the vapor pressure of the substrate by subtracting the vapor pressure of the empty carrier stored in the storage module 910 from the vapor pressure of the carrier on which the substrate is mounted measured by the load measurement mechanism 330. At this time, the carrier on which the substrate is mounted, which is measured for the water vapor pressure by the load measuring mechanism 330, is supplied to the load chamber 310 after the substrate is mounted on the mounting part 200 by the unloaded carrier, which is measured for the water vapor pressure by the unload measuring mechanism 530. Therefore, the substrate water vapor pressure calculation module 920 can calculate the water vapor pressure of the substrate that is not subjected to the sputtering process by subtracting the water vapor pressure of the carrier that is not subjected to the sputtering process from the water vapor pressure of the carrier that is not subjected to the sputtering process and on which the substrate is mounted. The water vapor pressure of the substrate calculated by the substrate water vapor pressure calculation module 920 may be an average value of a plurality of water vapor pressures calculated using a plurality of carriers and a plurality of substrates.

The carrier water vapor pressure calculating module 930 is configured to calculate the water vapor pressure of the carrier on which the sputtering process is performed in the sputtering section 500. When the water vapor pressure of the carrier, on which the sputtering process is performed in the sputtering section 500, is measured by the load measuring mechanism 330 after a new substrate is mounted on the carrier by the mounting section 200 and supplied to the loading chamber 310, the carrier water vapor pressure calculating module 930 may calculate the water vapor pressure of the carrier on which the sputtering process is performed in the sputtering section 500 by subtracting the water vapor pressure of the substrate measured by the substrate water vapor pressure calculating module 920 from the measured water vapor pressure. This is because the new substrate mounted on the carrier by the mounting part 200 is not yet subjected to the sputtering process, and thus is substantially the same as the water vapor pressure of the substrate calculated by the substrate water vapor pressure calculation module 920.

The determining module 940 is configured to determine whether the service life of the carrier is reached. When the water vapor pressure of the carrier calculated by the carrier water vapor pressure calculating module 930 is greater than or equal to the preset lifetime water vapor pressure, the determining module 940 may determine that the carrier has reached the lifetime. The life water vapor pressure is the water vapor pressure of the load carrier which has reached the service life, and can be derived through a test in advance and the like and preset by an operator. The carrier determined by the determination module 940 to have reached the end of its service life can be discharged to the magazine 700 through the converting part 400 and the carrier transferring part 600 in a state where the substrate is mounted. When the water vapor pressure of the carrier calculated by the carrier water vapor pressure calculating module 930 is lower than the preset life water vapor pressure, the determining module 940 may determine that the service life of the carrier still exists. At this time, the carrier may be supplied to the sputtering section 500 or the carrier transport section 600 according to the determination result of the converting section 400 after the water vapor pressure of the carrier is adjusted by the water vapor pressure managing section 300 in a state where the substrate is mounted.

On the other hand, in the case where the sputtering process is not performed, such as at the end of the operation, the carrier stored in the magazine, on which the substrate is mounted, is transferred to the carrier discharge chamber 610, the transfer portion 400, the sputtering portion 500, and the mounting portion 200, and then the substrate separating operation is performed. The substrate separated from the carrier can be discharged from the mounting part 200 to the substrate unloading module 120 by the substrate transfer module 130. The carrier from which the substrate is separated can be transferred from the mounting part 200 to the storage cassette 700 through the steam pressure managing part 300, the converting part 400, and the carrier discharging chamber 610.

The sputtering System 1 of the present invention may be a Hybrid System (Hybrid System) In which an In-line System (In-line System) and a Cluster System (Cluster System) are mixed as shown In fig. 10.

The present invention described above is not limited to the above-described embodiments and drawings, and those skilled in the art can make various substitutions, modifications, and changes without departing from the scope of the technical idea of the present invention.

Claims

1. A sputtering system, comprising:

a substrate transfer part for supplying a substrate to be subjected to a sputtering process and discharging the substrate having completed the sputtering process;

a mounting part connected to the substrate transfer part for mounting the substrate supplied from the substrate transfer part to a carrier and separating the substrate having completed the sputtering process from the carrier;

a sputtering part connected with the mounting part and used for carrying out the sputtering process on the substrate mounted on the loader;

the water vapor pressure management part is connected with the mounting part and is used for adjusting the water vapor pressure of the loader provided with the substrate; and

and the conversion part is respectively connected with the water vapor pressure management part and the sputtering part, and when the water vapor pressure of the loader provided with the substrate passing through the water vapor pressure management part is within a preset reference water vapor pressure range, the loader provided with the substrate is supplied to the sputtering part.

2. The sputtering system of claim 1,

the substrate transfer part includes:

a substrate loading module for inputting the substrate to be subjected to the sputtering process;

a substrate unloading module for discharging the substrate having completed the sputtering process; and

a substrate transfer module transferring the substrate to be subjected to the sputtering process from the substrate loading module to the mounting part and transferring the substrate having completed the sputtering process from the mounting part to the substrate unloading module,

the mounting part comprises a mounting module connected with the substrate transfer module,

the respective interiors of the substrate loading module and the substrate unloading module are switched between an atmospheric state and a vacuum state,

the respective interiors of the substrate transfer module and the mounting module are continuously maintained in a vacuum state.

3. The sputtering system of claim 1,

the steam pressure management part includes:

a loading chamber connected to the mounting part;

a plurality of management chambers for adjusting a water vapor pressure of the carriers mounted with the substrates supplied from the loading chamber;

a load measuring mechanism for measuring the water vapor pressure of the loader provided with the substrate received by the load chamber; and

and the management control mechanism controls the adjustment amount of the water vapor pressure of each management cavity according to the water vapor pressure measured by the loading measuring mechanism.

4. The sputtering system of claim 3,

the management control means controls each of the management chambers in accordance with the water vapor pressure measured by the load measuring means to adjust at least one of an exhaust flow rate at which each of the management chambers exhausts the internal gas and a heating temperature at which the internal temperature is raised.

5. The sputtering system of claim 3,

the management control mechanism includes:

a management setting module which sets at least one of an exhaust flow rate of the internal gas exhausted from each of the management chambers and a heating temperature for raising the internal temperature according to the water vapor pressure measured by the load measuring mechanism when the water vapor pressure measured by the load measuring mechanism is higher than the maximum value of the reference water vapor pressure range, so that the water vapor pressure is sequentially reduced when the carrier on which the substrate is mounted passes through the plurality of management chambers; and

a management control module controlling the plurality of management chambers according to a set value set by the management setting module.

6. The sputtering system of claim 3,

the water vapor pressure management part comprises a plurality of management measurement mechanisms for measuring the water vapor pressure of the loader provided with the substrate and received by each management cavity,

the management control mechanism includes:

the management setting module is used for setting a target reduction value for each management cavity according to the water vapor pressure measured by the loading measuring mechanism when the water vapor pressure measured by the loading measuring mechanism is higher than the maximum value of the reference water vapor pressure range, so that the water vapor pressure of the loader provided with the substrate is reduced sequentially when the loader passes through the plurality of management cavities;

a management correction module for correcting a target reduction value of a subsequent management chamber with reference to a previous management chamber when a vapor pressure of a carrier on which the substrate is mounted supplied from the previous management chamber is different from the target reduction value set for the previous management chamber; and

a management control module for controlling the plurality of management chambers according to the target reduction value set for each of the management chambers.

7. The sputtering system of claim 1,

the conversion section includes:

a conversion chamber connected to the steam pressure management part;

a switching measurement mechanism for measuring the water vapor pressure supplied from the water vapor pressure management part to the carrier of the switching chamber on which the substrate is mounted;

and the conversion judging mechanism is used for judging whether the water vapor pressure measured by the conversion measuring mechanism is within the range of the reference water vapor pressure.

8. The sputtering system of claim 1,

comprises a carrier conveying part which is connected with the conversion part,

when the water vapor pressure of the carrier on which the substrate is mounted exceeds the reference water vapor pressure range, the converting portion discharges the carrier on which the substrate is mounted to the carrier conveying portion.

9. The sputtering system of claim 8,

comprises a storage box which is connected with the carrier conveying part,

wherein the carrier transport section includes:

a carrier discharge chamber for discharging the carrier mounted with the substrate supplied from the converting part to the magazine; and

a carrier supply chamber for supplying a carrier supplied from the magazine to the converting portion.

10. The sputtering system of claim 9,

the carrier transport section comprising a supply measurement mechanism for measuring the water vapour pressure of the carrier received by the carrier supply chamber,

when the water vapor pressure measured by the supply measuring mechanism is within a preset reference carrier water vapor pressure range, the carrier supply chamber supplies the carrier to the converting part.

11. The sputtering system of claim 10,

the carrier transport section includes a supply control mechanism that controls an adjustment amount of the carrier supply chamber to adjust the water vapor pressure in accordance with the water vapor pressure measured by the supply measurement mechanism,

the supply control mechanism controls the carrier supply chamber to adjust at least one of an exhaust flow rate at which the carrier supply chamber exhausts the internal gas and a heating temperature at which the internal temperature is raised when the water vapor pressure measured by the supply measurement mechanism is higher than a maximum value of the reference carrier water vapor pressure range, and controls the carrier supply chamber to adjust a supply flow rate at which the external gas is supplied to the carrier supply chamber when the water vapor pressure measured by the supply measurement mechanism is lower than a minimum value of the reference carrier water vapor pressure range.

12. The sputtering system of claim 9,

the carrier transport section includes a discharge measurement mechanism that measures a water vapor pressure of the carrier on which the substrate is mounted in the carrier discharge chamber after the water vapor pressure of the carrier on which the substrate is mounted is adjusted by the carrier discharge chamber,

the carrier discharge chamber supplies the carrier mounted with the substrate to the converting section when the water vapor pressure measured by the discharge measuring mechanism is within the reference water vapor pressure range.

13. The sputtering system of claim 12,

the carrier discharge chamber performs at least one of exhaust for discharging internal gas and heating for raising an internal temperature to adjust a water vapor pressure of a carrier on which the substrate is mounted.

14. The sputtering system of claim 13,

the carrier discharge chamber repeats at least one of the operations of discharging internal gas and heating for raising the internal temperature, according to the water vapor pressure measured by the discharge measuring mechanism, until a preset suspension condition is satisfied,

wherein the preset suspension condition is at least one of a preset reference time elapsed from when the carrier mounted with the substrate is supplied to the carrier discharge chamber; and the water vapor pressure management part or the conversion part judges that the water vapor pressure of the loader provided with the other substrates exceeds the reference water vapor pressure range under the state that the loader provided with the substrates is positioned in the loader discharge chamber.

15. The sputtering system of claim 12,

the conversion section includes: a conversion chamber connected to the steam pressure management part; and

a switching measurement mechanism for measuring the water vapor pressure supplied from the water vapor pressure management part to the carrier of the substrate mounting to the switching chamber,

when the water vapor pressure measured by the conversion measuring mechanism is higher than the maximum value of the reference water vapor pressure range and is lower than a preset reference discharge value, the water vapor pressure of the carrier provided with the substrate is adjusted by the carrier discharge chamber, and when the water vapor pressure measured by the conversion measuring mechanism is higher than the maximum value of the reference water vapor pressure range and is higher than the reference discharge value, the water vapor pressure of the carrier provided with the substrate is not adjusted by the carrier discharge chamber, and the carrier provided with the substrate is discharged to the storage box.

16. The sputtering system of claim 3,

the control device comprises an updating part for updating the reference data of the adjustment amount of the water vapor pressure of each management chamber according to the water vapor pressure measured by the loading measuring mechanism,

the updating section updates the reference data using a change amount of the water vapor pressure of the empty carrier caused by the water vapor pressure being adjusted when the empty carrier passes through the water vapor pressure managing section, and a change amount of the water vapor pressure of the carrier on which the substrate is mounted caused by the water vapor pressure being adjusted when the carrier on which the substrate is mounted passes through the water vapor pressure managing section.

17. The sputtering system of claim 1,

comprising a carrier management section for managing the service life of the carrier,

the steam pressure management part includes:

a loading chamber connected to the mounting part; and

a load measuring mechanism for measuring the water vapor pressure of a carrier mounted with the substrate in the load chamber,

the sputtering section includes:

an unloading chamber connected with the mounting part; and

an unloading measuring mechanism for measuring the water vapor pressure of the unloaded carrier in the unloading chamber,

the carrier management section includes:

the storage module is used for storing the water vapor pressure of the unloaded carrier measured by the unloading measuring mechanism;

a substrate water vapor pressure calculation module which subtracts the water vapor pressure of the empty carrier stored in the storage module from the water vapor pressure of the carrier on which the substrate is mounted measured by the load measurement mechanism, thereby calculating the water vapor pressure of the substrate;

a carrier water vapor pressure calculation module configured to measure a water vapor pressure by the load measurement mechanism after a new substrate is mounted on the carrier on which the sputtering process is performed in the sputtering section through the mounting section and the carrier is supplied to the load chamber, and to calculate the water vapor pressure of the carrier on which the sputtering process is performed in the sputtering section by subtracting the water vapor pressure of the substrate calculated by the substrate water vapor pressure calculation module from the measured water vapor pressure; and

and the judging module is used for judging that the service life of the loader is reached when the water vapor pressure of the loader calculated by the loader water vapor pressure calculating module is more than the preset service life water vapor pressure.