CN112910230A - Simplified five-level voltage source type conversion device - Google Patents

Simplified five-level voltage source type conversion device Download PDF

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Publication number
CN112910230A
CN112910230A CN202110225011.XA CN202110225011A CN112910230A CN 112910230 A CN112910230 A CN 112910230A CN 202110225011 A CN202110225011 A CN 202110225011A CN 112910230 A CN112910230 A CN 112910230A
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China
Prior art keywords
insulated gate
gate bipolar
terminal
bipolar transistor
switching device
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CN202110225011.XA
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Chinese (zh)
Inventor
张文明
刘战
吕浩然
王旭
李从建
刘莹莹
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Jiangsu Normal University
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Jiangsu Normal University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/10—Arrangements incorporating converting means for enabling loads to be operated at will from different kinds of power supplies, e.g. from ac or dc
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/162—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

A simplified five-level voltage source type conversion device is used in a power conversion system and belongs to the field of power electronic converters. The invention comprises four capacitors, wherein a first capacitor C1, a second capacitor C2 are bus capacitors, a third capacitor C3 and a fourth capacitor C4 are clamping capacitors. The first terminal, the second section terminal, the third terminal, the fourth terminal, the fifth terminal, the sixth terminal, the seventh terminal, the eighth terminal and the ninth terminal; and ten insulated gate bipolar transistors IGBT1 to IGBT 10. The invention reduces the number of switching tubes with switching state change in the process of level conversion, and has simple control. And a clamping diode is not needed, and the quantity of used capacitors and switching tubes is very small.

Description

Simplified five-level voltage source type conversion device
Technical Field
The invention relates to a simplified five-level voltage source type conversion device which is used in a power conversion system and belongs to the field of power electronic converters.
Background
In recent years, with the development of science and technology, power electronic technology is rapidly developed under the push of increasingly higher industrial requirements. The multilevel conversion device has the advantages of low device voltage stress, large power, low switching frequency, low total harmonic distortion rate of output waveforms, small system electromagnetic interference and the like, so the power electronic device is also widely applied to various industrial fields. The multilevel converter topological structure is divided into a diode clamping type, a flying capacitor type and a cascade type. These three topologies are widely used. However, these three topology types have a drawback that cannot be ignored. The number of clamping diodes used for diode clamping increases to the power of the number of levels, and thus is difficult to use on a large scale in a high-level field. The flying capacitor type does not include a clamp diode, but has a problem of capacitance voltage control and an increase in the number of capacitors. The cascade topology structure requires an external power supply and is also very inconvenient to use in practice. Therefore, it is of great importance to find a multi-level converter topology that overcomes many of the disadvantages.
Currently, many optimized five-level architectures are proposed. Most five-level structures do not effectively solve the problems of the number and cost of topological structures. The five-level topological structure of this patent only need few electric capacity and switch tube and need not the clamp electric capacity. The circuit topology structure is simple, the level output is stable, and the control mode is simple. There are significant advantages, both in theory and in production practice.
Disclosure of Invention
In view of the problems in the prior art, the patent provides a five-level converter device which has a simple topological structure, stable output level number and a simple control method, uses few capacitors and few Insulated Gate Bipolar Transistors (IGBTs), does not need clamping diodes, and can use SI (silicon-in-silicon) material switching devices with lower cost for part of switching devices.
1. In order to achieve the above object, the present voltage source type five electric conversion device includes a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4; the terminal comprises a first terminal (1), a second terminal (2), a third terminal (3), a fourth terminal (4), a fifth terminal (5), a sixth terminal (6), a seventh terminal (7), an eighth terminal (8) and a ninth terminal (9); and ten insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT 10;
characterized in that a first capacitor C1 is connected between the first terminal (1) and the second terminal (2);
a second capacitor C2 is connected between the second terminal (2) and the third terminal (3);
a third capacitor C3 is connected between the fifth terminal (5) and the fourth terminal (4);
a fourth capacitor C4 is connected between the fourth terminal (4) and the sixth terminal (6);
the collector of the insulated gate bipolar transistor IGBT1 is connected to the first terminal (1), and the emitter of the insulated gate bipolar transistor IGBT1 is connected to the fifth terminal (5);
the collector of the insulated gate bipolar transistor IGBT2 is connected to the fifth terminal (5), and the emitter of the insulated gate bipolar transistor IGBT2 is connected to the seventh terminal (7);
the collector of the insulated gate bipolar transistor IGBT3 is connected to the seventh terminal (7), and the emitter of the insulated gate bipolar transistor IGBT3 is connected to the fourth terminal (4);
the collector of the insulated gate bipolar transistor IGBT4 is connected to the seventh terminal (7), and the emitter of the insulated gate bipolar transistor IGBT4 is connected to the ninth terminal (9);
the collector of the insulated gate bipolar transistor IGBT5 is connected to the ninth terminal (9), and the emitter of the insulated gate bipolar transistor IGBT5 is connected to the eighth terminal (8);
the collector of the insulated gate bipolar transistor IGBT6 is connected to the fourth terminal (4), and the emitter of the insulated gate bipolar transistor IGBT6 is connected to the eighth terminal (8);
the collector of the insulated gate bipolar transistor IGBT7 is connected to the eighth terminal (8), and the emitter of the insulated gate bipolar transistor IGBT7 is connected to the sixth terminal (6);
the collector of the insulated gate bipolar transistor IGBT8 is connected to the sixth terminal (6), and the emitter of the insulated gate bipolar transistor IGBT8 is connected to the third terminal (3);
the collector of the insulated gate bipolar transistor IGBT9 is connected to the fourth terminal (4), and the emitter of the insulated gate bipolar transistor IGBT9 is connected to the emitter of the insulated gate bipolar transistor IGBT 10;
the collector of the insulated gate bipolar transistor IGBT10 is connected to the second terminal (2), and the emitter of the insulated gate bipolar transistor IGBT10 is connected to the emitter of the insulated gate bipolar transistor IGBT 9;
the emitter of the insulated gate bipolar transistor IGBT9 is connected to the emitter of the insulated gate bipolar transistor IGBT10, and the ninth connection terminal is an output terminal connected between the emitter of the insulated gate bipolar transistor IGBT4 and the collector of the insulated gate bipolar transistor IGBT 5.
In a working period of the five-level topology unit, the five-level topology unit sequentially works in the first working state, the second working state, the third working state, the fourth working state and the fifth working state. When the direct current motor works in the first working state, the voltage of the output end is twice of the voltage of the direct current positive end; when the direct current motor works in the second working state, the voltage of the output end is equal to the voltage of the direct current positive end; when the working state is the third working state, the voltage of the output end is zero; when the working is in the fourth working state, the voltage of the output end is equal to the voltage of the direct-current negative end; when the DC power supply works in the fifth working state, the voltage of the output end is twice of the voltage of the DC negative end.
When the insulated gate bipolar transistors IGBT1, IGBT2 and IGBT4 are turned on and other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 2Vdc, wherein Vdc represents power supply voltage;
when the insulated gate bipolar transistors IGBT2 and IGBT4 are switched on and other insulated gate bipolar transistors IGBT are switched off, the circuit outputs Vdc;
the insulated gate bipolar transistors IGBT3, IGBT4, IGBT9 and IGBT10 are conducted, and when other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0; or when the insulated gate bipolar transistors IGBT5, IGBT6, IGBT9 and IGBT10 are turned on and other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0;
the insulated gate bipolar transistors IGBT5 and IGBT7 are switched on, other insulated gate bipolar transistors IGBT are switched off, and the circuit outputs-Vdc;
the insulated gate bipolar transistors IGBT5, IGBT7 and IGBT8 are turned on, other insulated gate bipolar transistors IGBT are turned off, and the circuit outputs-2 Vdc.
Each insulated gate bipolar transistor may also be replaced with an integrated gate commutated thyristor, gate turn-off thyristor, power transistor and power field effect transistor.
The switching frequencies of the insulated gate bipolar transistor IGBT4 and the insulated gate bipolar transistor IGBT5 are not high, and SI material switching tubes can be used, so that the five-level topology is reduced in cost.
Each switching tube is connected with a diode in an anti-parallel mode. Each switching tube is integrally packaged with the anti-parallel diode thereof.
The capacitor comprises a first capacitor C1, a second capacitor C2, a third capacitor and a fourth capacitor; the insulated gate bipolar transistor IGBT1, the insulated gate bipolar transistor IGBT2, the insulated gate bipolar transistor IGBT3, the insulated gate bipolar transistor IGBT4, the insulated gate bipolar transistor IGBT5, the insulated gate bipolar transistor IGBT6, the insulated gate bipolar transistor IGBT7, the insulated gate bipolar transistor IGBT8, the insulated gate bipolar transistor IGBT9, the insulated gate bipolar transistor IGBT10, the driving board and the control board are integrally packaged together.
The controller is used for controlling the conducting state or the cut-off state of each switching device in the five-level topology unit so as to enable the converter to work in a corresponding working state.
The control unit is respectively connected with each switching device and provides driving signals for each switching device; each of the switching devices is turned on or off by a corresponding driving signal.
The control signal of the control unit comprises a sinusoidal modulation wave and three groups of triangular carriers with the same frequency and amplitude, namely a triangular carrier A, a triangular carrier B and a triangular carrier C;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage value of the triangular carrier wave A at the same moment in a positive half cycle as the driving signals of the first switching device, the second switching device and the fourth switching device;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage values of the triangular carrier wave A and the triangular carrier wave B at the same moment in a positive half period as the driving signals of the second switching device and the fourth device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular modulation wave B and the triangular modulation wave C at the same time in a positive half period as the driving signals of the third switching device, the fourth switching device, the ninth switching device and the tenth switching device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage value of the triangular modulation wave A at the same moment in a negative half cycle as the driving signals of the fifth switching device, the seventh switching device and the eighth switching device;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage value of the triangular modulation wave A and the triangular modulation wave B at the same moment in a negative half cycle as the driving signals of the fifth switching device and the seventh switching device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular modulation wave B and the triangular modulation wave C at the same time in a negative half period as the driving signals of the fifth switching device, the sixth switching device, the ninth switching device and the tenth switching device.
The voltage source type five-level topological structure only needs four capacitors of C1, C2, C3 and C4, can save six capacitors for each phase compared with the traditional five-level flying capacitor type topological structure, and greatly reduces the volume of the circuit. The voltage source type five-level topological structure does not need a clamping diode, and compared with the traditional diode clamping type five-level topological structure, each phase can save six diodes, thereby greatly reducing the requirement of the number of devices. Compared with the traditional cascade five-level topological structure, the voltage source five-level topological structure does not need an external power supply, and is more convenient to use; the five-level voltage source type conversion device is simple in topological structure, simple in control mode and stable in level output; the switching frequency of the insulated gate bipolar transistor IGBT4 and the insulated gate bipolar transistor IGBT5 in the five-level voltage source conversion device is not high, a Si material switching tube can be adopted, and the device cost is saved. The present five-level voltage source converter arrangement has significant advantages, both in theory and in production practice.
Drawings
FIG. 1 is a diagram of a voltage source type five level topology of the present patent;
FIG. 2 is a diagram of the current path when the circuit described in this patent outputs Vdc;
FIG. 3 is a current path diagram for the circuit described in this patent at output Vdc/2;
FIG. 4 is a diagram of the current path when the circuit described in this patent outputs 0;
FIG. 5 is a current path diagram for the circuit described in this patent at output-Vdc/2;
FIG. 6 is a current path diagram for the circuit described in this patent at output-Vdc;
FIG. 7 is a topology diagram of the sixth embodiment of the present patent;
FIG. 8 is a topological structure diagram of the seventh embodiment of the present patent;
FIG. 9 is a topological structure diagram of an eighth embodiment of the present patent;
FIG. 10 is a topological structure diagram of the ninth embodiment of the present patent;
FIG. 11 is a topological structure diagram of a tenth embodiment of the present patent;
FIG. 12 is a topological structure diagram of an eleventh embodiment of the present patent;
fig. 13 is a timing diagram of the trigger signal of the single-phase bridge arm of the present patent.
Detailed Description
The technical solutions in the present patent are fully and systematically described in the following with reference to the drawings in the embodiments of the present patent, and it is understood that the embodiments described herein are only examples of a part of the present patent and are not meant to include all examples. Embodiments without inventive changes in this patent are intended to fall within the scope of this patent.
Referring to fig. 1, the voltage source type five-phase inverter includes a first capacitor C1, a second capacitor C2, a third capacitor C3, and a fourth capacitor C4; the terminal comprises a first terminal (1), a second terminal (2), a third terminal (3), a fourth terminal (4), a fifth terminal (5), a sixth terminal (6), a seventh terminal (7), an eighth terminal (8) and a ninth terminal (9); and ten insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT 10;
characterized in that a first capacitor C1 is connected between the first terminal (1) and the second terminal (2);
a second capacitor C2 is connected between the second terminal (2) and the third terminal (3);
a third capacitor C3 is connected between the fifth terminal (5) and the fourth terminal (4);
a fourth capacitor C4 is connected between the fourth terminal (4) and the sixth terminal (6);
the collector of the insulated gate bipolar transistor IGBT1 is connected to the first terminal (1), and the emitter of the insulated gate bipolar transistor IGBT1 is connected to the fifth terminal (5);
the collector of the insulated gate bipolar transistor IGBT2 is connected to the fifth terminal (5), and the emitter of the insulated gate bipolar transistor IGBT2 is connected to the seventh terminal (7);
the collector of the insulated gate bipolar transistor IGBT3 is connected to the seventh terminal (7), and the emitter of the insulated gate bipolar transistor IGBT3 is connected to the fourth terminal (4);
the collector of the insulated gate bipolar transistor IGBT4 is connected to the seventh terminal (7), and the emitter of the insulated gate bipolar transistor IGBT4 is connected to the ninth terminal (9);
the collector of the insulated gate bipolar transistor IGBT5 is connected to the ninth terminal (9), and the emitter of the insulated gate bipolar transistor IGBT5 is connected to the eighth terminal (8);
the collector of the insulated gate bipolar transistor IGBT6 is connected to the fourth terminal (4), and the emitter of the insulated gate bipolar transistor IGBT6 is connected to the eighth terminal (8);
the collector of the insulated gate bipolar transistor IGBT7 is connected to the eighth terminal (8), and the emitter of the insulated gate bipolar transistor IGBT7 is connected to the sixth terminal (6);
the collector of the insulated gate bipolar transistor IGBT8 is connected to the sixth terminal (6), and the emitter of the insulated gate bipolar transistor IGBT8 is connected to the third terminal (3);
the collector of the insulated gate bipolar transistor IGBT9 is connected to the fourth terminal (4), and the emitter of the insulated gate bipolar transistor IGBT9 is connected to the emitter of the insulated gate bipolar transistor IGBT 10;
the collector of the insulated gate bipolar transistor IGBT10 is connected to the second terminal (2), and the emitter of the insulated gate bipolar transistor IGBT10 is connected to the emitter of the insulated gate bipolar transistor IGBT 9;
the emitter of the insulated gate bipolar transistor IGBT9 is connected to the emitter of the insulated gate bipolar transistor IGBT10, and the ninth connection terminal is an output terminal connected between the emitter of the insulated gate bipolar transistor IGBT4 and the collector of the insulated gate bipolar transistor IGBT 5.
In a working period of the five-level topology unit, the five-level topology unit sequentially works in the first working state, the second working state, the third working state, the fourth working state and the fifth working state. When the direct current motor works in the first working state, the voltage of the output end is twice of the voltage of the direct current positive end; when the direct current motor works in the second working state, the voltage of the output end is equal to the voltage of the direct current positive end; when the working state is the third working state, the voltage of the output end is zero; when the working is in the fourth working state, the voltage of the output end is equal to the voltage of the direct-current negative end; when the DC power supply works in the fifth working state, the voltage of the output end is twice of the voltage of the DC negative end.
When the insulated gate bipolar transistors IGBT1, IGBT2 and IGBT4 are turned on and other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 2Vdc, wherein Vdc represents power supply voltage;
when the insulated gate bipolar transistors IGBT2 and IGBT4 are switched on and other insulated gate bipolar transistors IGBT are switched off, the circuit outputs Vdc;
the insulated gate bipolar transistors IGBT3, IGBT4, IGBT9 and IGBT10 are conducted, and when other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0; or when the insulated gate bipolar transistors IGBT5, IGBT6, IGBT9 and IGBT10 are turned on and other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0;
the insulated gate bipolar transistors IGBT5 and IGBT7 are switched on, other insulated gate bipolar transistors IGBT are switched off, and the circuit outputs-Vdc;
the insulated gate bipolar transistors IGBT5, IGBT7 and IGBT8 are turned on, other insulated gate bipolar transistors IGBT are turned off, and the circuit outputs-2 Vdc.
Each insulated gate bipolar transistor may also be replaced with an integrated gate commutated thyristor, gate turn-off thyristor, power transistor and power field effect transistor.
The switching frequencies of the insulated gate bipolar transistor IGBT4 and the insulated gate bipolar transistor IGBT5 are not high, and SI material switching tubes can be used, so that the five-level topology is reduced in cost.
Each switching tube is connected with a diode in an anti-parallel mode. Each switching tube is integrally packaged with the anti-parallel diode thereof.
The capacitor comprises a first capacitor C1, a second capacitor C2, a third capacitor and a fourth capacitor; the insulated gate bipolar transistor IGBT1, the insulated gate bipolar transistor IGBT2, the insulated gate bipolar transistor IGBT3, the insulated gate bipolar transistor IGBT4, the insulated gate bipolar transistor IGBT5, the insulated gate bipolar transistor IGBT6, the insulated gate bipolar transistor IGBT7, the insulated gate bipolar transistor IGBT8, the insulated gate bipolar transistor IGBT9, the insulated gate bipolar transistor IGBT10, the driving board and the control board are integrally packaged together.
The controller is used for controlling the conducting state or the cut-off state of each switching device in the five-level topology unit so as to enable the converter to work in a corresponding working state.
The control unit is respectively connected with each switching device and provides driving signals for each switching device; each of the switching devices is turned on or off by a corresponding driving signal.
The control signal of the control unit comprises a sinusoidal modulation wave and three groups of triangular carriers with the same frequency and amplitude, namely a triangular carrier A, a triangular carrier B and a triangular carrier C;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage value of the triangular carrier wave A at the same moment in a positive half cycle as the driving signals of the first switching device, the second switching device and the fourth switching device;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage values of the triangular carrier wave A and the triangular carrier wave B at the same moment in a positive half period as the driving signals of the second switching device and the fourth device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular modulation wave B and the triangular modulation wave C at the same time in a positive half period as the driving signals of the third switching device, the fourth switching device, the ninth switching device and the tenth switching device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage value of the triangular modulation wave A at the same moment in a negative half cycle as the driving signals of the fifth switching device, the seventh switching device and the eighth switching device;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage value of the triangular modulation wave A and the triangular modulation wave B at the same moment in a negative half cycle as the driving signals of the fifth switching device and the seventh switching device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular modulation wave B and the triangular modulation wave C at the same time in a negative half period as the driving signals of the fifth switching device, the sixth switching device, the ninth switching device and the tenth switching device.
The first embodiment is as follows:
referring to fig. 2, in the first embodiment of the present invention, when the insulated gate bipolar transistors IGBT1, IGBT2, and IGBT4 are turned on and the other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 2Vdc, where Vdc represents the power supply voltage.
Example two:
referring to fig. 3, in the second embodiment of the present invention, when the insulated gate bipolar transistors IGBT2 and IGBT4 are turned on and the other insulated gate bipolar transistors IGBT are turned off, the circuit outputs Vdc.
Example three:
referring to fig. 4, in the third embodiment of the present invention, when the insulated gate bipolar transistors IGBT3, IGBT4, IGBT9, and IGBT10 are turned on, and the other insulated gate bipolar transistors IGBT are turned off, the circuit output is 0; or when the insulated gate bipolar transistors IGBT5, IGBT6, IGBT9, and IGBT10 are turned on and the other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0.
Example four:
referring to fig. 5, in the fourth embodiment of the present invention, when the insulated gate bipolar transistors IGBT5 and IGBT7 are turned on and the other insulated gate bipolar transistors IGBT are turned off, the circuit outputs-Vdc.
Example five:
referring to fig. 6, in the fifth embodiment of the present invention, when the insulated gate bipolar transistors IGBT5, IGBT7, and IGBT8 are turned on and the other insulated gate bipolar transistors IGBT are turned off, the circuit outputs-Vdc.
Example six:
please refer to fig. 7, which shows a sixth embodiment of the present disclosure, in which the conversion circuit of the embodiment converts a direct current into a three-phase alternating current, a first terminal (1), a second terminal (2), and a third terminal (3) are dc input terminals, a tenth terminal (ten), an eleventh terminal (11), and a twelfth terminal (12) are three-phase ac output terminals, and the embodiment is characterized in that a dc bus capacitor is installed in each bridge arm, and the dc bus capacitor of each phase is installed close to the bridge arm of the phase, which is beneficial to reduce a stray inductance value from the dc bus capacitor to the bridge arm, and is more beneficial to the stability of the system.
Example seven:
please refer to fig. 8, which is a seventh embodiment of the present disclosure, wherein the function of the conversion circuit is to convert dc power into three-phase ac power, the first terminal (1), the second terminal (2), the third terminal (3) are dc input terminals, the tenth terminal (ten), the eleventh terminal (11), and the twelfth terminal (12) are three-phase ac output terminals, and the embodiment is characterized in that all bridge arms share a dc bus capacitor, and the dc bus capacitor is installed at the input terminal of the dc bus, which is beneficial to reduce the number of capacitors, the system structure is simpler, and the device size is smaller.
Example eight:
please refer to fig. 9, which is an eighth embodiment of the present disclosure, in which the conversion circuit of the embodiment converts three-phase ac power into dc power, and the first terminal (1), the second terminal (2), and the third terminal (3) are input terminals of the three-phase ac power, and the embodiment is characterized in that a dc bus capacitor is installed in each bridge arm, and the dc bus capacitor of each phase is installed close to the bridge arm of the phase, which is beneficial to reducing stray inductance from the dc bus capacitor to the bridge arm and stabilizing the system.
Example nine:
please refer to fig. 10, which shows an embodiment nine of the present disclosure, in which the conversion circuit functions to convert three-phase ac power into dc power, and the first terminal (1), the second terminal (2), and the third terminal (3) are input terminals of the three-phase ac power.
Example ten:
please refer to fig. 11, which shows an embodiment ten of the present disclosure, in which the conversion circuit of the embodiment is used to convert three-phase ac power into three-phase ac power, the first terminal (1), the second terminal (2), and the third terminal (3) are input terminals of the three-phase ac power, and the tenth terminal (ten), the eleventh terminal (11), and the twelfth terminal (12) are output terminals of the three-phase ac power.
Example eleven:
please refer to fig. 12, which is an eleventh embodiment of the present disclosure, wherein the function of the conversion circuit is to convert three-phase ac power into three-phase ac power, the first terminal (1), the second terminal (2), and the third terminal (3) are input terminals of the three-phase ac power, and the tenth terminal (ten), the eleventh terminal (11), and the twelfth terminal (12) are output terminals of the three-phase ac power.
Example twelve:
referring to fig. 13, which is a graph showing a comparison result of Q1 between the voltage value of the sine modulation wave and the voltage value of the triangular carrier wave a at the same time in the positive half period as the driving signals of the first switching device, the second switching device and the fourth switching device according to a twelfth embodiment of the present disclosure;
the comparison result of the voltage value of the sine modulation wave and the voltage values of the triangular carrier wave A and the triangular carrier wave B at the same moment in a positive half cycle is Q2, and the comparison result is used as a driving signal of a second switching device and a fourth switching device;
the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular carrier wave B and the triangular carrier wave C at the same time in the positive half cycle is Q3 as the drive signals of the third switching device, the fourth switching device, the ninth switching device, and the tenth switching device.
The comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular carrier wave B and the triangular carrier wave C at the same time in the negative half cycle is Q4 as the drive signals of the fifth switching device, the sixth switching device, the ninth switching device, and the tenth switching device.
The comparison result of the voltage value of the sine modulation wave and the voltage values of the triangular carrier wave A and the triangular carrier wave B at the same moment in a negative half cycle is Q5, and the comparison result is used as a driving signal of a fifth switching device and a seventh switching device;
the comparison result of the voltage value of the sinusoidal modulation wave and the voltage value of the triangular carrier wave a at the same time within a half cycle is Q6 as the drive signals of the fifth switching device, the seventh switching device, and the eighth switching device.

Claims (9)

1. A simplified five-level voltage source type conversion device is characterized by comprising a first capacitor C1, a second capacitor C2, a third capacitor C3 and a fourth capacitor C4; the terminal comprises a first terminal (1), a second terminal (2), a third terminal (3), a fourth terminal (4), a fifth terminal (5), a sixth terminal (6), a seventh terminal (7), an eighth terminal (8) and a ninth terminal (9); and ten insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT 10;
characterized in that a first capacitor C1 is connected between the first terminal (1) and the second terminal (2);
a second capacitor C2 is connected between the second terminal (2) and the third terminal (3);
a third capacitor C3 is connected between the fifth terminal (5) and the fourth terminal (4);
a fourth capacitor C4 is connected between the fourth terminal (4) and the sixth terminal (6);
the collector of the insulated gate bipolar transistor IGBT1 is connected to the first terminal (1), and the emitter of the insulated gate bipolar transistor IGBT1 is connected to the fifth terminal (5);
the collector of the insulated gate bipolar transistor IGBT2 is connected to the fifth terminal (5), and the emitter of the insulated gate bipolar transistor IGBT2 is connected to the seventh terminal (7);
the collector of the insulated gate bipolar transistor IGBT3 is connected to the seventh terminal (7), and the emitter of the insulated gate bipolar transistor IGBT3 is connected to the fourth terminal (4);
the collector of the insulated gate bipolar transistor IGBT4 is connected to the seventh terminal (7), and the emitter of the insulated gate bipolar transistor IGBT4 is connected to the ninth terminal (9);
the collector of the insulated gate bipolar transistor IGBT5 is connected to the ninth terminal (9), and the emitter of the insulated gate bipolar transistor IGBT5 is connected to the eighth terminal (8);
the collector of the insulated gate bipolar transistor IGBT6 is connected to the fourth terminal (4), and the emitter of the insulated gate bipolar transistor IGBT6 is connected to the eighth terminal (8);
the collector of the insulated gate bipolar transistor IGBT7 is connected to the eighth terminal (8), and the emitter of the insulated gate bipolar transistor IGBT7 is connected to the sixth terminal (6);
the collector of the insulated gate bipolar transistor IGBT8 is connected to the sixth terminal (6), and the emitter of the insulated gate bipolar transistor IGBT8 is connected to the third terminal (3);
the collector of the insulated gate bipolar transistor IGBT9 is connected to the fourth terminal (4), and the emitter of the insulated gate bipolar transistor IGBT9 is connected to the emitter of the insulated gate bipolar transistor IGBT 10;
the collector of the insulated gate bipolar transistor IGBT10 is connected to the second terminal (2), and the emitter of the insulated gate bipolar transistor IGBT10 is connected to the emitter of the insulated gate bipolar transistor IGBT 9;
the emitter of the insulated gate bipolar transistor IGBT9 is connected to the emitter of the insulated gate bipolar transistor IGBT10, and the ninth connection terminal is an output terminal connected between the emitter of the insulated gate bipolar transistor IGBT4 and the collector of the insulated gate bipolar transistor IGBT 5.
2. The simplified five-level voltage source type conversion device according to claim 1, wherein in one working cycle of the five-level topology unit, the five-level topology unit sequentially operates in the first working state, the second working state, the third working state, the fourth working state, and the fifth working state; when the direct current motor works in the first working state, the voltage of the output end is twice of the voltage of the direct current positive end; when the direct current motor works in the second working state, the voltage of the output end is equal to the voltage of the direct current positive end; when the working state is the third working state, the voltage of the output end is zero; when the working is in the fourth working state, the voltage of the output end is equal to the voltage of the direct-current negative end; when the direct current negative terminal works in the fifth working state, the voltage of the output terminal is twice of the voltage of the direct current negative terminal;
when the insulated gate bipolar transistors IGBT1, IGBT2 and IGBT4 are turned on and other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 2Vdc, wherein Vdc represents power supply voltage;
when the insulated gate bipolar transistors IGBT2 and IGBT4 are switched on and other insulated gate bipolar transistors IGBT are switched off, the circuit outputs Vdc;
the insulated gate bipolar transistors IGBT3, IGBT4, IGBT9 and IGBT10 are conducted, and when other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0; or when the insulated gate bipolar transistors IGBT5, IGBT6, IGBT9 and IGBT10 are turned on and other insulated gate bipolar transistors IGBT are turned off, the circuit outputs 0;
the insulated gate bipolar transistors IGBT5 and IGBT7 are switched on, other insulated gate bipolar transistors IGBT are switched off, and the circuit outputs-Vdc;
the insulated gate bipolar transistors IGBT5, IGBT7 and IGBT8 are turned on, other insulated gate bipolar transistors IGBT are turned off, and the circuit outputs-2 Vdc.
3. A simplified five-level voltage source converter according to claim 1, wherein each insulated gate bipolar transistor is replaced by an integrated gate commutated thyristor, gate turn-off thyristor, power transistor and power field effect transistor.
4. A simplified five-level voltage source converter according to claim 1, wherein each switching transistor is connected in anti-parallel with a diode.
5. The simplified five-level voltage source type converter according to claim 1, wherein each switching tube is integrally packaged with its anti-parallel diode.
6. The simplified five-level voltage source type conversion device according to claim 1, wherein the first capacitor C1, the second capacitor C2, the third capacitor, and the fourth capacitor; the insulated gate bipolar transistor IGBT1, the insulated gate bipolar transistor IGBT2, the insulated gate bipolar transistor IGBT3, the insulated gate bipolar transistor IGBT4, the insulated gate bipolar transistor IGBT5, the insulated gate bipolar transistor IGBT6, the insulated gate bipolar transistor IGBT7, the insulated gate bipolar transistor IGBT8, the insulated gate bipolar transistor IGBT9, the insulated gate bipolar transistor IGBT10, the driving board and the control board are integrally packaged together.
7. The simplified five-level voltage source type converter according to any one of claims 1-7, further comprising a control unit for controlling the on-state or off-state of each switching device in said five-level topology unit to operate said converter in the corresponding operating state.
8. The simplified five-level voltage source type converter according to claim 7, wherein said control unit is connected to each of said switching devices, respectively, said control unit providing a driving signal to each of said switching devices, respectively; each of the switching devices is turned on or off by a corresponding driving signal.
9. The simplified five-level voltage source type conversion device according to claim 8, wherein the control signal of the control unit comprises a sine modulation wave and three groups of triangular carriers with same frequency and amplitude, namely a triangular carrier A, a triangular carrier B and a triangular carrier C;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage value of the triangular carrier wave A at the same moment in a positive half cycle as the driving signals of the first switching device, the second switching device and the fourth switching device;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage values of the triangular carrier wave A and the triangular carrier wave B at the same moment in a positive half period as the driving signals of the second switching device and the fourth device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular modulation wave B and the triangular modulation wave C at the same time in a positive half period as the driving signals of the third switching device, the fourth switching device, the ninth switching device and the tenth switching device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage value of the triangular modulation wave A at the same moment in a negative half cycle as the driving signals of the fifth switching device, the seventh switching device and the eighth switching device;
the control unit takes the comparison result of the voltage value of the sine modulation wave and the voltage value of the triangular modulation wave A and the triangular modulation wave B at the same moment in a negative half cycle as the driving signals of the fifth switching device and the seventh switching device;
the control unit takes the comparison result of the voltage value of the sinusoidal modulation wave and the voltage values of the triangular modulation wave B and the triangular modulation wave C at the same time in a negative half period as the driving signals of the fifth switching device, the sixth switching device, the ninth switching device and the tenth switching device.
CN202110225011.XA 2021-03-01 2021-03-01 Simplified five-level voltage source type conversion device Pending CN112910230A (en)

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CN202110225011.XA CN112910230A (en) 2021-03-01 2021-03-01 Simplified five-level voltage source type conversion device

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Application Number Priority Date Filing Date Title
CN202110225011.XA CN112910230A (en) 2021-03-01 2021-03-01 Simplified five-level voltage source type conversion device

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CN112910230A true CN112910230A (en) 2021-06-04

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