CN215871226U - Hybrid clamp five-level voltage source converter - Google Patents
Hybrid clamp five-level voltage source converter Download PDFInfo
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- CN215871226U CN215871226U CN202120419273.5U CN202120419273U CN215871226U CN 215871226 U CN215871226 U CN 215871226U CN 202120419273 U CN202120419273 U CN 202120419273U CN 215871226 U CN215871226 U CN 215871226U
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Abstract
A mixed clamping five-level voltage source converter belongs to the field of power electronic conversion devices. The circuit comprises a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal (1), a second terminal (2), a third terminal (3), a fourth terminal (4), insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12, and two diodes VD1 and VD 2. Compared with a flying capacitor type five-level converter, the hybrid clamp type five-level voltage source converter uses less capacitors, and the size of the device is reduced; the five-level converter has the capacity of balancing capacitor voltage relative to a diode clamping type five-level converter.
Description
Background
In recent years, with the development of power electronic technology and control technology, power electronic devices have been widely used, and the power electronic devices have higher and higher capabilities of high power, high voltage resistance and low harmonic disturbance. The multi-level converter has the advantages of high power, low switching frequency, small output harmonic, high dynamic response speed, good electromagnetic compatibility and the like, can ensure that power electronic devices with low voltage withstanding values can be reliably applied to the high-voltage high-power field, and effectively reduces higher harmonics generated by Pulse Width Modulation (PWM) control. However, the conventional flying capacitor type five-level converter has inherent defects such as a large number of capacitors and imbalance between capacitor voltages of a diode clamp type five-level converter, and thus, popularization and application of a five-level converter in practice are inhibited.
In practical application, the five-level converter must also consider the factor of voltage sharing of the insulated gate bipolar transistor, and because the parasitic inductance and the parasitic capacitance of the insulated gate bipolar transistors of different models are different in the five-level converter, the voltages at two ends of the two insulated gate bipolar transistors of different models which are connected in series are different, and finally the insulated gate bipolar transistors of different models can be damaged, so the insulated gate bipolar transistors of different models cannot be used in series; meanwhile, when designing and installing, different types of insulated gate bipolar transistors can be different in size, so that the insulated gate bipolar transistors cannot be mixed in practical use. Therefore, a practical five-level conversion device is not only theoretically feasible, but also has practical characteristics in practical use.
SUMMERY OF THE UTILITY MODEL
In view of the problems in the prior art, the present invention provides a hybrid clamp five-level voltage source converter, which uses a small number of capacitors, does not have the problem of unbalanced capacitor voltages, and has the same withstand voltage for each insulated gate bipolar transistor.
In order to achieve the above object, the present hybrid clamp five-level voltage source converter includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal, a second terminal, a third terminal, a fourth terminal, an insulated gate bipolar transistor IGBT1, an IGBT2, an IGBT3, an IGBT4, an IGBT5, an IGBT6, an IGBT7, an IGBT8, an IGBT9, an IGBT10, an IGBT11, an IGBT12, and two diodes VD1, VD 2;
the first terminal and the capacitor C1 are connected to the collector of the insulated gate bipolar transistor IGBT 1;
the second terminal, the capacitor C1, the capacitor C2, and the emitter of the insulated gate bipolar transistor IGBT4 are connected to the collector of the insulated gate bipolar transistor IGBT 5;
the third terminal and IGBT capacitor C2 are connected to the emitter of insulated gate bipolar transistor IGBT 8;
the emitter of the insulated gate bipolar transistor IGBT1 and the collector of the insulated gate bipolar transistor IGBT2, and the emitter of the insulated gate bipolar transistor IGBT3 and the collector of the insulated gate bipolar transistor IGBT4 are connected to the two poles of the capacitor C3, respectively; the emitter of the insulated gate bipolar transistor IGBT5 and the collector of the insulated gate bipolar transistor IGBT6, and the emitter of the insulated gate bipolar transistor IGBT7 and the collector of the insulated gate bipolar transistor IGBT8 are connected to the two poles of the capacitor C4, respectively;
the collector of the insulated-gate bipolar transistor IGBT9 is connected to the emitter of the insulated-gate bipolar transistor IGBT2 and the collector of the insulated-gate bipolar transistor IGBT 3. The emitter of the insulated gate bipolar transistor IGBT12 is connected to the emitter of the insulated gate bipolar transistor IGBT6 and the collector of the insulated gate bipolar transistor IGBT 7;
the emitter of the insulated gate bipolar transistor IGBT10 is connected to the collector of the insulated gate bipolar transistor IGBT 11;
the cathode of the diode VD1 is connected to the emitter of the insulated gate bipolar transistor IGBT9 and the collector of the insulated gate bipolar transistor IGBT 10; the cathode of the diode VD2 is connected with the anode of the diode VD1 and a connecting terminal;
the cathode of the diode VD2 is connected to the emitter of the insulated gate bipolar transistor IGBT11 and the collector of the IGBT 12; each insulated gate bipolar transistor can also be replaced by an integrated gate commutated thyristor, a gate turn-off thyristor, a power transistor and a power field effect transistor;
the first terminal, the second terminal and the third terminal are direct current input ends, the fourth terminal, the fifth terminal and the sixth terminal are three-phase alternating current output ends, a direct current bus capacitor is installed in each bridge arm, and each phase of direct current bus capacitor is installed close to the phase of the bridge arm;
the first terminal, the second terminal and the third terminal are direct current input ends, the fourth terminal, the fifth terminal and the sixth terminal are three-phase alternating current output ends, all bridge arms share one direct current bus capacitor, and the direct current bus capacitor is arranged at the input end of a direct current bus;
the first terminal, the second terminal and the third terminal are three-phase alternating current input ends, a direct current bus capacitor is installed in each bridge arm, and each phase of direct current bus capacitor is installed close to the corresponding phase of bridge arm;
the first terminal, the second terminal and the third terminal are three-phase alternating current input ends, all bridge arms share one direct current bus capacitor, and the direct current bus capacitor is arranged at the input end of a direct current bus;
the first terminal, the second terminal and the third terminal are input ends of three-phase alternating current, the fourth terminal, the fifth terminal and the sixth terminal are output ends of the three-phase alternating current, a direct-current bus capacitor is installed in each bridge arm, and each phase of direct-current bus capacitor is installed close to the corresponding phase of bridge arm;
the first terminal, the second terminal and the third terminal are input ends of three-phase alternating current, the fourth terminal, the fifth terminal and the sixth terminal are output ends of the three-phase alternating current, all bridge arms share one direct-current bus capacitor, and the direct-current bus capacitor is arranged at the input end of a direct-current bus;
compared with the prior art, the voltages at the two ends of the two capacitors C1 and C2 of the hybrid clamping five-level voltage source type conversion device are 1/2 of the direct-current bus voltage respectively, the voltages at the two ends of the capacitors C3 and C4 are 1/4 of the direct-current bus voltage respectively, the voltage borne by each insulated gate bipolar transistor is 1/4 of the direct-current bus voltage, the withstand voltages borne by all the insulated gate bipolar transistors are the same, the insulated gate bipolar transistors of the same model can be selected during use, so that the type selection of the switch tube is very convenient, and the switch tube of the same model only needs to be selected; in addition, the packaging of all the switch tubes is the same, and the design and installation of the switch tubes are more convenient.
Drawings
Fig. 1 is a topology diagram of a hybrid clamped five level voltage source converter of the present invention;
FIG. 2 is a topology according to embodiment 2 of the present invention;
FIG. 3 is a topology according to embodiment 3 of the present invention;
FIG. 4 is a topology according to embodiment 4 of the present invention;
FIG. 5 is a topology according to embodiment 5 of the present invention;
FIG. 6 is a topology according to embodiment 6 of the present invention;
fig. 7 is a topology according to embodiment 7 of the present invention.
Detailed Description
The utility model is described in detail below with reference to the drawings and the detailed description.
Example 1
As shown in fig. 1, the hybrid clamp five-level voltage source converter includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal, a second terminal, a third terminal, a fourth terminal, an insulated gate bipolar transistor IGBT1, an IGBT2, an IGBT3, an IGBT4, an IGBT5, an IGBT6, an IGBT7, an IGBT8, an IGBT9, an IGBT10, an IGBT11, an IGBT12, and two diodes VD1, VD 2;
the first terminal and the capacitor C1 are connected to the collector of the insulated gate bipolar transistor IGBT 1;
the second terminal, the capacitor C1, the capacitor C2, and the emitter of the insulated gate bipolar transistor IGBT4 are connected to the collector of the insulated gate bipolar transistor IGBT 5;
the third terminal and IGBT capacitor C2 are connected to the emitter of insulated gate bipolar transistor IGBT 8;
the emitter of the insulated gate bipolar transistor IGBT1 and the collector of the insulated gate bipolar transistor IGBT2, and the emitter of the insulated gate bipolar transistor IGBT3 and the collector of the insulated gate bipolar transistor IGBT4 are connected to the two poles of the capacitor C3, respectively; the emitter of the insulated gate bipolar transistor IGBT5 and the collector of the insulated gate bipolar transistor IGBT6, and the emitter of the insulated gate bipolar transistor IGBT7 and the collector of the insulated gate bipolar transistor IGBT8 are connected to the two poles of the capacitor C4, respectively;
the collector of the insulated-gate bipolar transistor IGBT9 is connected to the emitter of the insulated-gate bipolar transistor IGBT2 and the collector of the insulated-gate bipolar transistor IGBT 3. The emitter of the insulated gate bipolar transistor IGBT12 is connected to the emitter of the insulated gate bipolar transistor IGBT6 and the collector of the insulated gate bipolar transistor IGBT 7;
the emitter of the insulated gate bipolar transistor IGBT10 is connected to the collector of the insulated gate bipolar transistor IGBT 11.
The cathode of the diode VD1 is connected to the emitter of the insulated gate bipolar transistor IGBT9 and the collector of the insulated gate bipolar transistor IGBT 10; the cathode of the diode VD2 is connected with the anode of the diode VD1 and a connecting terminal; the cathode of the diode VD2 is connected to the emitter of the insulated gate bipolar transistor IGBT11 and the collector of the IGBT 12;
the output of five level voltages can be realized by controlling the on and off of different insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, and IGBT 12.
In the specific implementation of the utility model, the insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12, capacitor C3, capacitor C4, diode VD1, diode VD2, the driving board and the control board are integrated into a larger module.
Each insulated gate bipolar transistor can be replaced by other fully-controlled devices, including an integrated gate commutated thyristor, a gate turn-off thyristor, a power transistor and a power field effect transistor.
The voltage between the first terminal 1 and the third terminal 3 is the dc bus voltage.
When the hybrid clamp five-level voltage source type converter provided by the utility model operates stably, the voltages at the two ends of the capacitors C1 and C2 are required to be controlled to be 1/2 of the voltage of the direct-current bus respectively, and the voltages at the two ends of the capacitors C3 and C4 are required to be controlled to be 1/4 of the voltage of the direct-current bus respectively. When the voltages across the capacitors C1 and C2 are 1/2 of the dc bus voltage, respectively, and the voltages across the capacitors C3 and C4 are 1/4 of the dc bus voltage, respectively, the voltage borne by each igbt is 1/4 of the dc bus voltage. Therefore, all the insulated gate bipolar transistors in the utility model bear the same withstand voltage, and the insulated gate bipolar transistors of the same type can be selected when in use.
Example 2
Fig. 2 is an embodiment 2 of the present invention, the embodiment 2 is a three-phase inverter topology circuit composed of the converter of the present invention, the function of the converter circuit of the embodiment is to convert dc power into three-phase ac power, the first terminal 1, the second terminal 2, the third terminal 3 are dc input terminals, the fourth terminal 4, the fifth terminal 5, and the sixth terminal 6 are three-phase ac output terminals, the feature of the embodiment is that a dc bus capacitor is installed in each bridge arm, and the dc bus capacitor of each phase is installed close to the bridge arm of the phase, which is beneficial to reducing stray inductance from the dc bus capacitor to the bridge arm, and is more beneficial to the stability of the system.
Example 3
Fig. 3 is an embodiment 3 of the present invention, wherein the embodiment 3 is a three-phase inverter topology circuit composed of the converter of the present invention, the function of the converter of the present invention is to convert dc power into three-phase ac power, the first terminal 1, the second terminal 2, the third terminal 3 are dc input terminals, the fourth terminal 4, the fifth terminal 5, and the sixth terminal 6 are three-phase ac output terminals, and the present embodiment is characterized in that all bridge arms share a dc bus capacitor, and the dc bus capacitor is installed at the input terminal of the dc bus, which is beneficial to reducing the number of capacitors, the system structure is simpler, and the device size is smaller.
Example 4
Fig. 4 is an embodiment 4 of the present invention, wherein the embodiment 4 is a three-phase rectifier topology circuit composed of the converter of the present invention, the function of the converter of the embodiment is to convert three-phase ac power into dc power, the first terminal 1, the second terminal 2, and the third terminal 3 are input terminals of the three-phase ac power, and the embodiment is characterized in that a dc bus capacitor is installed in each bridge arm, and the dc bus capacitor of each phase is installed close to the bridge arm of the phase, which is beneficial to reducing stray inductance values from the dc bus capacitor to the bridge arms and is more beneficial to the stability of the system.
Example 5
Fig. 5 is an embodiment 5 of the present invention, wherein the embodiment 5 is a three-phase rectifier topology circuit composed of the converter of the present invention, the function of the converter of the embodiment is to convert three-phase ac power into dc power, the first terminal 1, the second terminal 2, and the third terminal 3 are input terminals of the three-phase ac power, and the embodiment is characterized in that all bridge arms share a dc bus capacitor, and the dc bus capacitor is installed at the input terminal of the dc bus, which is beneficial to reduce the number of capacitors, the system structure is simpler, the device size is smaller, and the topology of the embodiment can be used in a rectifying device, an active filter, and a static reactive power compensation device.
Example 6
Fig. 6 is an embodiment 6 of the present invention, wherein the embodiment 6 is a three-phase back-to-back five-level topology circuit composed of the converter of the present invention, and the function of the conversion circuit of the embodiment is to convert three-phase alternating current into three-phase alternating current, the first terminal 1, the second terminal 2, the third terminal 3 are input terminals of the three-phase alternating current, and the fourth terminal 4, the fifth terminal 5, and the sixth terminal 6 are output terminals of the three-phase alternating current.
Example 7
Fig. 7 is an embodiment 7 of the present invention, wherein the embodiment 7 is a three-phase back-to-back five-level topology circuit composed of the converter of the present invention, the function of the converter of the present invention is to convert three-phase ac power into three-phase ac power, the first terminal 1, the second terminal 2, the third terminal 3 are input terminals of the three-phase ac power, the fourth terminal 4, the fifth terminal 5, and the sixth terminal 6 are output terminals of the three-phase ac power, and the converter of the present embodiment is characterized in that all bridge arms share a dc bus capacitor, and the dc bus capacitor is installed at the input terminal of the dc bus, which is beneficial to reducing the number of capacitors, and the system has a simpler structure and a smaller device volume.
The voltages at two ends of two capacitors C1 and C2 of the hybrid clamping five-level voltage source type conversion device are 1/2 of the voltage of a direct-current bus respectively, the voltages at two ends of the capacitors C3 and C4 are 1/4 of the voltage of the direct-current bus respectively, the voltage borne by each insulated gate bipolar transistor is 1/4 of the voltage of the direct-current bus, the withstand voltages borne by all the insulated gate bipolar transistors are the same, and the insulated gate bipolar transistors of the same type can be selected when the hybrid clamping five-level voltage source type conversion device is used.
Claims (8)
1. A hybrid clamp five-level voltage source type converter is characterized by comprising a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal (1), a second terminal (2), a third terminal (3) and a fourth terminal (4), an insulated gate bipolar transistor IGBT1, an IGBT2, an IGBT3, an IGBT4, an IGBT5, an IGBT6, an IGBT7, an IGBT8, an IGBT9, an IGBT10, an IGBT11, an IGBT12 and two diodes VD1 and VD 2;
the first terminal (1) and the capacitor C1 are connected to the collector of an insulated gate bipolar transistor IGBT 1;
the second terminal (2), the capacitor C1, the capacitor C2 and the emitter of the insulated gate bipolar transistor IGBT4 are connected to the collector of the insulated gate bipolar transistor IGBT 5;
the third terminal (3) and the IGBT capacitor C2 are connected to the emitter of an insulated gate bipolar transistor IGBT 8;
the emitter of the insulated gate bipolar transistor IGBT1 and the collector of the insulated gate bipolar transistor IGBT2, and the emitter of the insulated gate bipolar transistor IGBT3 and the collector of the insulated gate bipolar transistor IGBT4 are connected to the two poles of the capacitor C3, respectively; the emitter of the insulated gate bipolar transistor IGBT5 and the collector of the insulated gate bipolar transistor IGBT6, and the emitter of the insulated gate bipolar transistor IGBT7 and the collector of the insulated gate bipolar transistor IGBT8 are connected to the two poles of the capacitor C4, respectively;
the collector of the insulated-gate bipolar transistor IGBT9 is connected to the emitter of the insulated-gate bipolar transistor IGBT2 and the collector of the insulated-gate bipolar transistor IGBT 3; the emitter of the insulated gate bipolar transistor IGBT12 is connected to the emitter of the insulated gate bipolar transistor IGBT6 and the collector of the insulated gate bipolar transistor IGBT 7;
the emitter of the insulated gate bipolar transistor IGBT10 is connected to the collector of the insulated gate bipolar transistor IGBT 11;
the cathode of the diode VD1 is connected to the emitter of the insulated gate bipolar transistor IGBT9 and the collector of the insulated gate bipolar transistor IGBT 10; the cathode of the diode VD2 is connected with the anode of the diode VD1 and the second terminal (2); the cathode of the diode VD2 is connected to the emitter of the insulated gate bipolar transistor IGBT11 and the collector of the IGBT 12.
2. The hybrid clamp five-level voltage source converter according to claim 1, wherein each insulated gate bipolar transistor is replaced with an integrated gate commutated thyristor, gate turn-off thyristor, power transistor or power field effect transistor.
3. The hybrid clamp five-level voltage source converter according to claim 1, wherein the first terminal (1), the second terminal (2) and the third terminal (3) are direct current input terminals, the fourth terminal (4), the fifth terminal (5) and the sixth terminal (6) are three-phase alternating current output terminals, each bridge arm is provided with a direct current bus capacitor, and each phase of direct current bus capacitor is arranged close to the bridge arm.
4. The hybrid clamp five-level voltage source converter according to claim 1, wherein the first terminal (1), the second terminal (2) and the third terminal (3) are direct current input terminals, the fourth terminal (4), the fifth terminal (5) and the sixth terminal (6) are three-phase alternating current output terminals, all bridge arms share a direct current bus capacitor, and the direct current bus capacitor is installed at an input terminal of a direct current bus.
5. The hybrid clamp five-level voltage source converter according to claim 1, wherein the first terminal (1), the second terminal (2) and the third terminal (3) are input terminals of three-phase alternating current, each bridge arm is provided with a direct current bus capacitor, and each phase of direct current bus capacitor is arranged close to the bridge arm.
6. The hybrid clamp five-level voltage source converter according to claim 1, wherein the first terminal (1), the second terminal (2) and the third terminal (3) are input terminals of three-phase alternating current, all bridge arms share a direct current bus capacitor, and the direct current bus capacitor is installed at the input terminal of the direct current bus.
7. The hybrid clamp five-level voltage source converter according to claim 1, wherein the first terminal (1), the second terminal (2) and the third terminal (3) are input ends of three-phase alternating current, the fourth terminal (4), the fifth terminal (5) and the sixth terminal (6) are output ends of three-phase alternating current, each bridge arm is provided with a direct current bus capacitor, and each phase of direct current bus capacitor is arranged close to the bridge arm.
8. The hybrid clamp five-level voltage source converter according to claim 1, wherein the first terminal (1), the second terminal (2) and the third terminal (3) are input ends of three-phase alternating current, the fourth terminal (4), the fifth terminal (5) and the sixth terminal (6) are output ends of three-phase alternating current, all bridge arms share one direct current bus capacitor, and the direct current bus capacitor is installed at the input end of a direct current bus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120419273.5U CN215871226U (en) | 2021-02-26 | 2021-02-26 | Hybrid clamp five-level voltage source converter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120419273.5U CN215871226U (en) | 2021-02-26 | 2021-02-26 | Hybrid clamp five-level voltage source converter |
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| CN215871226U true CN215871226U (en) | 2022-02-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112886846A (en) * | 2021-02-26 | 2021-06-01 | 江苏师范大学 | Hybrid clamp five-level voltage source type converter and control method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112886846A (en) * | 2021-02-26 | 2021-06-01 | 江苏师范大学 | Hybrid clamp five-level voltage source type converter and control method |
| CN112886846B (en) * | 2021-02-26 | 2024-06-14 | 江苏师范大学 | Hybrid clamping five-level voltage source type converter and control method |
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