CN112909165A - Preparation method of gradient metal oxide memristor - Google Patents
Preparation method of gradient metal oxide memristor Download PDFInfo
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- CN112909165A CN112909165A CN202110093471.1A CN202110093471A CN112909165A CN 112909165 A CN112909165 A CN 112909165A CN 202110093471 A CN202110093471 A CN 202110093471A CN 112909165 A CN112909165 A CN 112909165A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/028—Formation of the switching material, e.g. layer deposition by conversion of electrode material, e.g. oxidation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
Abstract
The invention discloses a preparation method of a gradient metal oxide memristor, which comprises the following steps: s1, preparing a metal bottom electrode on the surface of the substrate; s2, heating the bottom electrode to 300-400 ℃ in an oxygen environment, keeping the temperature for 10-3000 min, and naturally cooling to form gradient metal oxide on the surface of the bottom electrode; s3, preparing a metal top electrode on the surface of the gradient metal oxide. The method can reduce the randomness of oxygen vacancy migration, so that stable multivalue is formed on the functional layer, the randomness of defect migration is reduced, the stability and consistency of the memristor are improved, and certain contribution is made to the development of the memristor.
Description
Technical Field
The invention relates to the field of material preparation, in particular to a preparation method of a gradient metal oxide memristor.
Background
The rapid development of the artificial intelligence technology puts higher requirements on high-energy-efficiency data processing, and the brain-like chip has excellent energy efficiency and obtains wide attention. The memristor is used as a resistor with a memory function, the resistor has plasticity, can perfectly simulate biological synapses, and is considered as the best choice for realizing a brain-like chip. The memristor is a three-layer structure of a metal bottom electrode/a functional layer/a metal top electrode, a plurality of different materials are selected as functional layer materials at present, and in order to realize the multi-valued memristor, a large number of defects (oxygen vacancies and the like) are usually introduced in the preparation process of the functional materials.
Through the development of more than ten years, the nonvolatile multivalue memristor with high consistency is not broken through. A large number of defects are introduced in the preparation process of the memristor functional material, and the method is an effective way for obtaining the multivalue memristor. However, functional layers prepared by atomic layer deposition, magnetron sputtering and other methods have uniform components and random defect migration, and cannot meet the production requirements of memristors, so that a new memristor preparation method needs to be found to improve the memristors.
Disclosure of Invention
The invention aims to solve the problems and provides a preparation method of a gradient metal oxide memristor, which is simple to operate and can improve the consistency of the memristor.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a preparation method of a gradient metal oxide memristor comprises the following steps:
s1, preparing a metal bottom electrode on the surface of the substrate;
s2, heating the bottom electrode to 300-400 ℃ in an oxygen environment, keeping the temperature for 10-3000 min, and naturally cooling to form gradient metal oxide on the surface of the bottom electrode;
s3, preparing a metal top electrode on the surface of the gradient metal oxide.
Further, in the step S1, a metal bottom electrode is prepared on the substrate surface through a photolithography process, a metal deposition process, and a lift-off process in sequence.
Further, the thickness of the metal bottom electrode is 30-100 nm, and the metal bottom electrode is made of one of titanium, tungsten, aluminum and hafnium; the substrate is a silicon wafer with a silicon oxide layer on the surface.
Further, in the step S2, when the bottom electrode is in an oxygen environment, the oxygen flow rate is 10 to 1000 ml/min.
Further, in the step S3, a metal top electrode is prepared on the surface of the gradient metal oxide sequentially through a photolithography process, a metal deposition process, and a lift-off process.
Furthermore, the metal top electrode is of a two-layer structure, the bottom layer is made of titanium-nitrogen alloy, and the top layer is made of one of aluminum, gold, tungsten and platinum.
Compared with the prior art, the invention has the advantages and positive effects that:
according to the invention, gradient metal oxide is obtained as the functional layer through a thermal oxidation mode, so that stable multivalue is formed in the functional layer, and the randomness of defect migration is reduced, thereby improving the stability and consistency of the memristor and making a certain contribution to the development of the memristor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a memristor in the present disclosure;
FIG. 2 is a schematic diagram of distribution of oxygen vacancies in a memristor gradient functional layer in the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived from the embodiments of the present invention by a person skilled in the art without any creative effort, should be included in the protection scope of the present invention.
As shown in fig. 1, the gradient metal oxide memristor is a schematic structural diagram, and includes a substrate 1, a metal bottom electrode 2, a functional layer 3, and a metal top electrode 4, where the metal bottom electrode 2 is located on the surface of the substrate 1, the functional layer 3 is located on the surface of the metal bottom electrode 2, and the metal top electrode 4 is located on the surface of the functional layer 3.
The method comprises the following steps that a silicon wafer with a silicon oxide layer on the surface can be selected as a substrate 1, a metal bottom electrode 2 is prepared on the surface of the substrate 1 through a conventional photoetching process, a metal deposition process (such as magnetron sputtering) and a stripping process, the thickness of the metal bottom electrode is 30-100 nm, and the material of the metal bottom electrode 2 can be selected from titanium, tungsten, aluminum, hafnium and the like; then annealing treatment is carried out in an oxygen environment, the heating temperature is 300-400 ℃, the thermal oxidation time is 30-300 min, and the oxygen flow during oxidation is 10-1000 ml/min; after annealing treatment, gradient metal oxide 3 appears on the surface of the bottom electrode; then preparing a metal top electrode 4 on the surface of the functional layer 3 through a conventional photoetching process, a metal deposition process (such as magnetron sputtering and the like) and a stripping process, wherein the metal top electrode 4 is of a two-layer structure, the bottom layer can be selected from titanium nitride, and the titanium nitride is an adhesion layer; the top layer can be selected from metals such as aluminum, gold, tungsten, platinum and the like.
As shown in fig. 2, when a forward voltage is applied to the metal top electrode 4 toward the metal bottom electrode 2, the oxygen vacancies 5 in the functional layer 3 will move toward the bottom electrode in sequence with the increase of the voltage, thereby forming stable multi-values; similarly, when a reverse voltage is applied to the metal bottom electrode 2 toward the metal top electrode 4, the oxygen vacancies 5 move toward the bottom electrode in sequence with the increase of the voltage, and thus stable multi-values can be formed.
According to the invention, the gradient metal oxide is obtained by a thermal oxidation mode to serve as a functional layer, and forward voltage is transmitted to the metal bottom electrode through the metal top electrode during testing, so that oxygen vacancies in the functional layer move towards the bottom electrode along with the voltage, and the randomness of oxygen vacancy migration is reduced, so that the functional layer forms stable multivalues, and the randomness of defect migration is reduced, thereby improving the stability and consistency of the memristor and making a certain contribution to the development of the memristor.
Claims (6)
1. A preparation method of a gradient metal oxide memristor is characterized by comprising the following steps: the method comprises the following steps:
s1, preparing a metal bottom electrode on the surface of the substrate;
s2, heating the bottom electrode to 300-400 ℃ in an oxygen environment, keeping the temperature for 10-3000 min, and naturally cooling to form gradient metal oxide on the surface of the bottom electrode;
s3, preparing a metal top electrode on the surface of the gradient metal oxide.
2. The method for preparing a gradient metal oxide memristor according to claim 1, wherein: in the step S1, a metal bottom electrode is prepared on the surface of the substrate by a photolithography process, a metal deposition process, and a lift-off process in sequence.
3. The method for preparing a gradient metal oxide memristor according to claim 2, wherein: the thickness of the metal bottom electrode is 30-100 nm, and the metal bottom electrode is made of one of titanium, tungsten, aluminum and hafnium; the substrate is a silicon wafer with a silicon oxide layer on the surface.
4. The method for preparing a gradient metal oxide memristor according to claim 3, wherein: in the step S2, when the bottom electrode is in an oxygen environment, the oxygen flow is 10-1000 ml/min.
5. The method for preparing a gradient metal oxide memristor according to claim 4, wherein: and in the step S3, preparing the metal top electrode on the surface of the gradient metal oxide through a photoetching process, a metal deposition process and a stripping process in sequence.
6. The method for preparing a gradient metal oxide memristor according to claim 5, wherein: the metal top electrode is of a two-layer structure, the bottom layer is made of titanium-nitrogen alloy, and the top layer is made of one of aluminum, gold, tungsten and platinum.
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| CN202110093471.1A CN112909165A (en) | 2021-01-22 | 2021-01-22 | Preparation method of gradient metal oxide memristor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090152526A1 (en) * | 2007-11-07 | 2009-06-18 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof |
| CN108807668A (en) * | 2018-06-25 | 2018-11-13 | 华中科技大学 | Based on the high-performance memory resistor of metal oxide oxygen concentration gradient and its preparation |
| KR20200023745A (en) * | 2018-08-27 | 2020-03-06 | 한국세라믹기술원 | Memristor device and fabricating method of the same |
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- 2021-01-22 CN CN202110093471.1A patent/CN112909165A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090152526A1 (en) * | 2007-11-07 | 2009-06-18 | Interuniversitair Microelektronica Centrum (Imec) Vzw | Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof |
| CN108807668A (en) * | 2018-06-25 | 2018-11-13 | 华中科技大学 | Based on the high-performance memory resistor of metal oxide oxygen concentration gradient and its preparation |
| WO2020001328A1 (en) * | 2018-06-25 | 2020-01-02 | 华中科技大学 | High performance memristor device based on oxygen concentration gradient of metal oxide, and preparation thereof |
| KR20200023745A (en) * | 2018-08-27 | 2020-03-06 | 한국세라믹기술원 | Memristor device and fabricating method of the same |
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