CN112903755B - Carbon dioxide sensor and preparation method thereof - Google Patents
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- CN112903755B CN112903755B CN202110206629.1A CN202110206629A CN112903755B CN 112903755 B CN112903755 B CN 112903755B CN 202110206629 A CN202110206629 A CN 202110206629A CN 112903755 B CN112903755 B CN 112903755B
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 239000001569 carbon dioxide Substances 0.000 title claims abstract description 48
- 229910002092 carbon dioxide Inorganic materials 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 73
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 44
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229920002472 Starch Polymers 0.000 claims abstract description 12
- 235000019698 starch Nutrition 0.000 claims abstract description 12
- 239000008107 starch Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 92
- 238000002161 passivation Methods 0.000 claims description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 16
- 229920002873 Polyethylenimine Polymers 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 12
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 37
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000010444 Acidosis Diseases 0.000 description 1
- 230000007950 acidosis Effects 0.000 description 1
- 208000026545 acidosis disease Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 235000014171 carbonated beverage Nutrition 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 235000012055 fruits and vegetables Nutrition 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- -1 silicon aluminum nitrogen Chemical compound 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
Abstract
The invention relates to a carbon dioxide sensor and a preparation method thereof, which belong to the technical field of carbon dioxide sensors and solve the technical problems that: an improvement of a carbon dioxide sensor hardware structure and a preparation method thereof are provided; the technical scheme adopted for solving the technical problems is as follows: generating a gallium nitride/aluminum gallium nitride epitaxial wafer with high crystal quality on a silicon substrate, etching one end of the epitaxial wafer, depositing an aluminum electrode by utilizing an electrode preparation process, directly photoetching the other end of the epitaxial wafer into a platinum electrode, and then coating a mixture of PEI and starch between the two electrodes, thereby obtaining a carbon dioxide sensor with wide detection range, reusability, good stability and high material utilization rate; the carbon dioxide sensor prepared by the invention has the beneficial effects of wide detection range, low price, easiness in detection, reusability and the like; the invention is applied to a carbon dioxide detection circuit.
Description
Technical Field
The invention relates to a carbon dioxide sensor and a preparation method thereof, belonging to the technical field of carbon dioxide sensors.
Background
Along with the continuous development of science and technology, the carbon dioxide content needs to be increased to improve the production efficiency in the processes of preparing carbonated beverages, welding, producing fruits and vegetables and the like, and once the concentration of carbon dioxide inhaled into a human body exceeds 20%, carbonic acid is formed in blood to cause acidosis; therefore, developing a gas sensor for detecting the concentration of carbon dioxide will help to improve the production efficiency and ensure the physical health of the operators.
The traditional carbon dioxide sensor adopts an infrared verification technology to detect gas, and has high price, and the concentration range of the detected gas is only 0% -0.5%, so that the carbon dioxide sensor with low cost and wide detection range is necessary to be manufactured; when the currently used gallium nitride gas sensor is used for detecting the concentration of carbon dioxide, the detection range can reach 0% -50%, and the defect of narrow detection range of the traditional carbon dioxide sensor can be well overcome; however, when gallium nitride is applied to a circuit for detecting carbon dioxide, two ends of the circuit are required to be etched, then metal is sputtered between gallium nitride and aluminum gallium nitride in sequence by a magnetron sputtering method to form an electrode, the method is complex in steps, the treatment cost is high, and the manufactured gas sensor is short in service life. In summary, in order to solve the foregoing problems in the current carbon dioxide sensor field, a carbon dioxide sensor with a wide detection range, simple manufacturing steps and long service life needs to be found.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and solves the technical problems that: an improvement of a carbon dioxide sensor hardware structure and a preparation method thereof are provided.
In order to solve the technical problems, the invention adopts the following technical scheme: the utility model provides a carbon dioxide sensor, includes silicon substrate layer and deposit the epitaxial wafer on silicon substrate layer, the epitaxial wafer is specifically high crystal quality gallium nitride or aluminium gallium nitride epitaxial wafer, the epitaxial wafer has deposited in proper order from the bottom up: the device comprises a first aluminum nitride buffer layer, an aluminum gallium nitride buffer layer, a gallium nitride voltage-resistant layer, a gallium nitride layer, a second aluminum nitride buffer layer, an aluminum gallium nitride layer and a gallium nitride cap layer;
etching one end of the epitaxial wafer, depositing an aluminum electrode by magnetron sputtering, and forming a platinum electrode by photoetching at the other end of the epitaxial wafer;
in addition, a mixture composed of polyethylenimine and starch is coated on the top of the epitaxial wafer and between the aluminum electrode and the platinum electrode;
a passivation layer is also coated on top of the aluminum and platinum electrodes.
The thickness of the silicon substrate layer is 0-2000um;
the thickness of the first aluminum nitride buffer layer is 100-300nm;
the thickness of the AlGaN buffer layer is 1000-2000nm;
the thickness of the gallium nitride pressure-resistant layer is 1500-3000nm;
the thickness of the gallium nitride layer is 200-400nm;
the thickness of the second aluminum nitride buffer layer is 0-2nm;
the thickness of the aluminum gallium nitride layer is 10-20nm;
the thickness of the gallium nitride cap layer is 0-2nm;
the thickness of the aluminum electrode is 120nm-150nm;
the thickness of the platinum electrode is 20nm-50nm.
The passivation layer is one or more of silicon nitride, silicon aluminum nitride and aluminum oxide;
the thickness of the passivation layer is 10-30nm;
the passivation layer does not cover all the aluminum electrode and the platinum electrode, and a groove for circuit wiring is formed in the part, which is not covered by the passivation layer.
The mixing ratio of the polyethyleneimine and the starch in the mixture is 2:1.
A preparation method of a carbon dioxide sensor comprises the following preparation steps:
step one: growing gallium nitride or aluminum gallium nitride epitaxial wafer with high crystal quality on the silicon substrate layer;
step two: etching the epitaxial wafer by using molten sodium hydroxide or potassium hydroxide at one end of the epitaxial wafer to form a cuboid groove, depositing an aluminum electrode with the thickness of 120-150 nm in the gallium nitride layer by using a magnetron sputtering technology at the groove, and forming ohmic contact between the aluminum electrode and the epitaxial wafer;
a platinum electrode with the thickness of 20nm-50nm is manufactured on the surface layer at the other end of the epitaxial wafer by adopting a photoetching technology, so that the platinum electrode and the aluminum gallium nitride layer form a Schottky diode;
step three: depositing passivation layers on the surfaces of the aluminum electrode and the platinum electrode;
step four: mixing polyethylenimine and starch together according to the proportion of 2:1, uniformly mixing the polyethylenimine and the starch by using a magnetic stirrer, and coating the uniformly mixed mixture solution on an epitaxial wafer and between an aluminum electrode and a platinum electrode;
step five: and (3) placing the whole epitaxial wafer in a drying box to evaporate the solvent, and forming a stable film on the epitaxial wafer to finish the manufacture of the whole carbon dioxide sensor device.
The specific steps of the first step are as follows: a first aluminum nitride buffer layer of 200nm, an aluminum gallium nitride buffer layer of 1600nm, a gallium nitride voltage-resistant layer of 2200nm, a gallium nitride layer of 300nm, a second aluminum nitride buffer layer of 1nm, an aluminum gallium nitride layer of 18nm and a gallium nitride cap layer of 1nm are sequentially grown on a silicon substrate layer of 1000um, and an epitaxial wafer containing high-crystal-quality gallium nitride or aluminum gallium nitride is prepared after the growth is completed.
And in the second step, the etching thickness of the epitaxial wafer material is 100nm.
In the second step, the epitaxial wafer with the prepared electrode is required to be cracked, so that the epitaxial wafer is uniformly divided into epitaxial wafer units with the thickness of 5mm multiplied by 5 mm;
the specification of the aluminum electrode in the epitaxial wafer of 5mm×5mm is 1mm×5mm×150nm, and the specification of the platinum electrode is 1mm×5mm×50nm.
The specification of the passivation layer deposited in the third step is 1mm by 4mm by 20nm.
Compared with the prior art, the invention has the following beneficial effects: according to the invention, a novel carbon dioxide sensor is prepared by compounding a two-dimensional electronic channel in the middle of gallium nitride/aluminum gallium nitride with Polyethyleneimine (PEI) and a starch mixture, and the problems of narrow detection range, complex manufacturing of a gallium nitride-based electrode, short service life and the like of the existing carbon dioxide sensor are solved, the characteristics of high sensitivity, good selectivity, good device stability and the like of carbon dioxide under the action of starch of the two-dimensional electronic channel in the middle of gallium nitride/aluminum gallium nitride are utilized, a silicon substrate is designed as a base material, a gallium nitride/aluminum gallium nitride epitaxial wafer with high crystal quality is prepared, a platinum electrode is manufactured on the epitaxial wafer by utilizing a photoetching technology to form a Schottky diode to replace a common electrode, and finally, the preparation is completed through a passivation layer protection material and the electrode, the detection range of the prepared carbon dioxide sensor can be expanded from 0% -0.5% to 0% -50%, meanwhile, the manufacturing cost is reduced, and the service life is long; meanwhile, the manufacturing process is simplified in the preparation process, the etching process is reduced, the gallium nitride/aluminum gallium nitride material is fully utilized, and the epitaxial wafer used in the sensor has good biocompatibility and environmental friendliness.
Drawings
The invention is further described below with reference to the accompanying drawings:
FIG. 1 is a schematic diagram of the structure of an epitaxial wafer of a carbon dioxide sensor of the present invention;
FIG. 2 is a schematic diagram of the structure of an electrode of the carbon dioxide sensor of the present invention;
FIG. 3 is a schematic diagram of a passivation layer of a carbon dioxide sensor according to the present invention;
FIG. 4 is a schematic diagram of a circuit configuration of the carbon dioxide sensor of the present invention in use;
in the figure: the epitaxial wafer is 11, the silicon substrate layer is 1, the first aluminum nitride buffer layer is 2, the aluminum gallium nitride buffer layer is 3, the gallium nitride voltage-resistant layer is 4, the gallium nitride layer is 5, the second aluminum nitride buffer layer is 6, the aluminum gallium nitride layer is 7, the gallium nitride cap layer is 8, the aluminum electrode is 9, the platinum electrode is 10, the mixture is 21, and the passivation layer is 22.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects solved by the invention more clear, the invention will be further and clearly described below with reference to the embodiments and the attached drawings in the invention; it will be apparent that the specific embodiments described herein are merely some, but not all embodiments of the invention; the technical scheme of the present invention is described in detail below with reference to examples and drawings, but the scope of protection is not limited thereto.
As shown in fig. 1 to 3, the carbon dioxide sensor provided by the invention belongs to the technical field of gas sensors, and in particular relates to a novel electrode manufacturing step and a carbon dioxide sensor with a wide detection range, which can be applied to a circuit for detecting carbon dioxide, and the steps of preparing the sensor in the figure are as follows:
1. sequentially growing a first aluminum nitride buffer layer of 200nm, an aluminum gallium nitride buffer layer of 1600nm, a gallium nitride voltage-resistant layer of 2200nm, a gallium nitride layer of 300nm, a second aluminum nitride buffer layer of 1nm, an aluminum gallium nitride layer of 18nm and a gallium nitride cap layer of 1nm on a 1000um silicon substrate to further generate an epitaxial wafer of high-crystal-quality gallium nitride/aluminum gallium nitride, as shown in figure 1;
2. etching one end of the epitaxial wafer by using molten NaOH/KOH to form a groove, and depositing an aluminum electrode with the thickness of 120-150 nm on the gallium nitride layer at the groove by using a magnetron sputtering technology to form ohmic contact between the aluminum electrode and the epitaxial wafer, as shown in figure 2;
3. manufacturing a platinum electrode with the thickness of 20nm-50nm on the surface layer of the epitaxial wafer by adopting a photoetching technology, forming a Schottky diode by the platinum electrode and aluminum gallium nitride, splitting the generated epitaxial wafer, and uniformly dividing the epitaxial wafer with the manufactured electrode into epitaxial wafers with the thickness of 5mm multiplied by 5 mm;
4. covering one or more of silicon nitride, silicon aluminum nitrogen and aluminum oxide on the surface of the electrode as a passivation layer, wherein the volume of the passivation layer is 1mm by 4mm by 20nm;
5. the polyethylenimine and the starch are mixed together according to the proportion of 2:1, the mixture is uniformly mixed by using a magnetic stirrer, the uniformly mixed solution is coated on an epitaxial wafer and between two electrodes, the epitaxial wafer and the electrodes are placed in a drying box to evaporate the solvent, a stable film is formed on the epitaxial wafer, and finally the preparation of the gas sensor is completed, as shown in figure 3.
As shown in fig. 4, when the prepared sensor is used, the prepared carbon dioxide sensor is connected with a power supply, an ammeter and a singlechip, the singlechip is used for controlling a buzzer and a display simultaneously, the buzzer is controlled to act by writing an if else statement in a c language, and when the concentration of carbon dioxide corresponding to the ammeter exceeds 10%, the singlechip sends out a signal to control the buzzer to sound and alarm, so that a user is reminded of wearing a protection tool or ventilating a corresponding closed space when the user enters the space.
In the use process, a data storage module can be added into the singlechip to store detection data, so that carbon dioxide concentration data in a period of time when a user does not observe in real time can be reserved, and data retrieval, analysis and report generation are conveniently carried out.
The foregoing is only for illustrating the technical concept and features of the present invention, and it should not be considered that the specific embodiments of the present invention are limited thereto, and it is possible for those skilled in the art to make several simple deductions or substitutions without departing from the present invention, for example, to make full use of gan/algan material, directly cancel the etching at both ends, place electrodes on both sides of the epitaxial wafer, and cover passivation layers around the electrodes, which are all equivalent changes or modifications made according to the spirit of the present invention, and all the equivalent changes or modifications should be considered to belong to the scope of the present invention as defined by the appended claims.
Claims (8)
1. A carbon dioxide sensor comprising a silicon substrate layer (1) and an epitaxial wafer (11) deposited on the silicon substrate layer (1), characterized in that: the epitaxial wafer (11) is specifically a high-crystal quality gallium nitride or aluminum gallium nitride epitaxial wafer, and the epitaxial wafer (11) is formed by sequentially depositing: the first aluminum nitride buffer layer (2), the aluminum gallium nitride buffer layer (3), the gallium nitride voltage-resistant layer (4), the gallium nitride layer (5), the second aluminum nitride buffer layer (6), the aluminum gallium nitride layer (7) and the gallium nitride cap layer (8);
etching one end of the epitaxial wafer (11) and depositing an aluminum electrode (9) by adopting magnetron sputtering, wherein the other end of the epitaxial wafer (11) adopts a photoetching mode to form a platinum electrode (10);
in addition, a mixture (21) composed of polyethylenimine and starch is coated on the top of the epitaxial wafer (11) and between the aluminum electrode (9) and the platinum electrode (10);
a passivation layer (22) is further coated on top of the aluminum electrode (9) and the platinum electrode (10);
a preparation method of a carbon dioxide sensor comprises the following preparation steps:
step one: growing a gallium nitride or aluminum gallium nitride epitaxial wafer (11) with high crystal quality on the silicon substrate layer (1);
step two: etching the epitaxial wafer (11) at one end of the epitaxial wafer (11) by using molten sodium hydroxide or potassium hydroxide to form a cuboid groove, depositing an aluminum electrode (9) with the thickness of 120-150 nm in the gallium nitride layer (5) at the groove by using a magnetron sputtering technology, and forming ohmic contact between the aluminum electrode (9) and the epitaxial wafer (11);
a platinum electrode (10) with the thickness of 20nm-50nm is manufactured on the surface layer at the other end of the epitaxial wafer (11) by adopting a photoetching technology, so that the platinum electrode (10) and the aluminum gallium nitride layer (7) form a Schottky diode;
step three: depositing a passivation layer (22) on the surfaces of the aluminum electrode (9) and the platinum electrode (10);
step four: mixing polyethylenimine and starch together according to the proportion of 2:1, using a magnetic stirrer to uniformly mix the polyethylenimine and the starch, and coating the uniformly mixed mixture (21) solution on an epitaxial wafer (11) and between an aluminum electrode (9) and a platinum electrode (10);
step five: and (3) placing the whole epitaxial wafer (11) in a drying box to evaporate the solvent, and forming a stable film on the epitaxial wafer (11) to finish the manufacture of the whole carbon dioxide sensor device.
2. A carbon dioxide sensor according to claim 1, wherein: the thickness of the silicon substrate layer (1) is 0-2000um;
the thickness of the first aluminum nitride buffer layer (2) is 100-300nm;
the thickness of the AlGaN buffer layer (3) is 1000-2000nm;
the thickness of the gallium nitride pressure-resistant layer (4) is 1500-3000nm;
the thickness of the gallium nitride layer (5) is 200-400nm;
the thickness of the second aluminum nitride buffer layer (6) is 0-2nm;
the thickness of the aluminum gallium nitride layer (7) is 10-20nm;
the thickness of the gallium nitride cap layer (8) is 0-2nm;
the thickness of the aluminum electrode (9) is 120nm-150nm;
the thickness of the platinum electrode (10) is 20nm-50nm.
3. A carbon dioxide sensor according to claim 1, wherein: the passivation layer (22) is one or more of silicon nitride, silicon aluminum nitride and aluminum oxide;
the thickness of the passivation layer (22) is 10-30nm;
the passivation layer (22) does not cover all the aluminum electrode (9) and the platinum electrode (10), and a groove for circuit wiring is formed in the part which is not covered by the passivation layer (22).
4. A carbon dioxide sensor according to claim 1, wherein: the mixing ratio of the polyethyleneimine and the starch in the mixture (21) is 2:1.
5. A carbon dioxide sensor according to claim 1, wherein: the specific steps of the first step are as follows: a first aluminum nitride buffer layer (2) with 200nm, an aluminum gallium nitride buffer layer (3) with 1600nm, a gallium nitride voltage-resistant layer (4) with 2200nm, a gallium nitride layer (5) with 300nm, a second aluminum nitride buffer layer (6) with 1nm, an aluminum gallium nitride layer (7) with 18nm and a gallium nitride cap layer (8) with 1nm are sequentially grown on a silicon substrate layer (1) with 1000um, and an epitaxial wafer (11) containing high-crystal-quality gallium nitride or aluminum gallium nitride is prepared after the growth is completed.
6. A carbon dioxide sensor according to claim 5, wherein: and in the second step, the etching thickness of the material of the epitaxial wafer (11) is 100nm.
7. A carbon dioxide sensor according to claim 6, wherein: in the second step, the epitaxial wafer (11) with the prepared electrode is required to be cracked, so that the epitaxial wafer (11) is uniformly divided into epitaxial wafer units of 5mm multiplied by 5 mm;
the specification of the aluminum electrode (9) in the epitaxial wafer (11) of 5mm by 5mm is 1mm by 5mm by 150nm, and the specification of the platinum electrode (10) is 1mm by 5mm by 50nm.
8. A carbon dioxide sensor according to claim 7, wherein: the passivation layer (22) deposited in the third step has a specification of 1mm by 4mm by 20nm.
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