CN110412082A - A kind of semiconductor porous crystalline thin films sensor and preparation method - Google Patents
A kind of semiconductor porous crystalline thin films sensor and preparation method Download PDFInfo
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Abstract
The present invention relates to a kind of semiconductor porous crystalline thin films sensor and preparation methods, dense porous crystal film including substrate and setting on substrate, the dense porous crystal film is crosslinked the perforated grill structure formed by cone-shaped protrusion, constitutes the hole of falling pointed cone of sharp conical shape between the side wall of the cone-shaped protrusion.The dense porous crystal film of the application is disposably to grow, and has simple preparation process, large specific surface area and the advantages such as surface-active height；Dense porous crystal film is constituted by falling cone-shaped hole, is conducive to sample to be tested disengaging aperture and has big specific surface area；Its hole wall is cone-shaped structure, more solid stabilization；The nitride semi-conductor material of selection belongs to third generation semiconductor material, has excellent chemical stability, and such as acid-alkali-corrosive-resisting is more suitable for the semiconductor transducer of high reliability.
Description
Technical field
The present invention relates to a kind of semiconductor transducer more particularly to a kind of semiconductor porous crystalline thin films sensor and preparations
Method.
Background technique
Semiconductor transducer is widely used in detecting the composition of liquid or gaseous sample, i.e., in detection liquid or gaseous sample
Micro substance content, its working principle is that: determinand (such as lewis' acid) is contacted with semiconductor surface and on surface
Reaction is learned, to change the resistance of semiconductor material or generate kinetic current.
In order to improve the detection sensitivity of sensor, need to improve the specific surface area of sensitive material, for example use nanometer
Grain, nano wire or porous membrane are as sensitive material.For nano-particle sensor, need to assemble and fix particle, while not
Particle surface can be blocked and cover, therefore the preparation process of sensor is complicated, and stability and reliability are bad.For nano wire
Sensor under external force, especially is easy to shake since the structure of nano wire is very thin under air-flow or water impact, stablizes
Property is not good enough.For thin-film material, due to that can be tightly attached to substrate surface or grow in substrate surface, stability is best, but
It is to prepare porous membrane, generallys use electrochemical etching or latticed crystal growth technique at present, complex process is prior
It is that porous membrane prepared by above-mentioned technique, aperture is typically larger than tens nanometers, about 20nm~200nm, is not easy preparation more
Small hole, therefore the specific surface area of material is limited.
As resistor-type GaN film sensor, generally use GaN transistor structure such as field effect transistor at present, when to
When survey object is adsorbed on transistor gate, the channel resistance of transistor can be caused to change；As GaN film electrochemical sensing
Device generallys use electrochemical corrosion at present and prepares " porous monocrystalline film " or growth " latticed monocrystal thin films " as electrode material
Material, the nitrogen vacancy of aperture larger (specific surface area is lower) and monocrystal thin films is few (surface-active is low), therefore transducer sensitivity
Lower (Talanta, 2017,165,540-544；Sensors and Actuators B,2011,155,699-708；
Sensors and Actuators A,2014,209,52-56)；For common porous material, since its hole is elongate strip
Shape, it is slow that determinand diffuses into or be discharged aperture, therefore contact measured object is unable to fully inside aperture, the response speed of sensor
Spend slow, sensitvity constraint；And for common porous material, short texture is fragile, and hole wall is very thin.
In conclusion how it is simple, fast prepare semiconductor porous film, and have bigger serface and high surface living
Property is urgent problem in the prior art.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of semiconductor porous crystalline thin films sensor and
Preparation method, the technical scheme adopted by the invention is as follows:
A kind of semiconductor porous crystalline thin films sensor, the dense porous crystal including substrate and setting on substrate are thin
Film, the perforated grill structure that the dense porous crystal film is made of cone-shaped protrusion crosslinking, the cone-shaped protrusion
Constitute the hole of falling pointed cone of sharp conical shape between side wall.
Wherein, the side wall of the cone-shaped protrusion is semiconductor crystal face, and pointed cone angle is between 30 °~120 °.
Wherein, the pore-size distribution in the hole of falling pointed cone is from nanometer scale to micron dimension.
Wherein, the material of the dense porous crystal film is elemental semiconductor, compound semiconductor and metal oxide
One of semiconductor.
Wherein, the material of the dense porous crystal film is nitride.
Wherein, the dense porous crystal film surface is provided with the semiconductor crystal film of other materials.
Wherein, the semiconductor crystal film preferred oxides semiconductive thin film.
Wherein, the dense porous crystal film surface is provided with metal film, is modified with carboxyl, carboxyl in metallic film surface
Or sulfydryl.
Wherein, the dense porous crystal film is by partly or entirely oxidation.
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of semiconductor porous crystalline thin films sensor
Preparation method, grows the dense porous crystal film of 5~5000nm thickness on substrate under the first set temperature, and the densification is more
Hole crystal film is crosslinked the perforated grill structure formed by cone-shaped protrusion, constitutes between the side wall of the cone-shaped protrusion
The hole of falling pointed cone of sharp conical shape.
Wherein, in the side wall of the cone-shaped protrusion and the hole wall surface metal-coated membrane in the hole of falling pointed cone, in metallic film surface
It is modified with carboxyl, carboxyl or sulfydryl.
Wherein, aoxidize dense porous crystal film partly or entirely by high annealing.
Wherein, the first set temperature of dense porous crystal film, than the growth temperature of monocrystal thin films under similar growth conditions
Spend low at least 100 DEG C.
The present invention simultaneously has following technical effect that
1. sensor of the invention, can be only with the dense porous crystal film of single layer nitride, structure is more simple.
2. sensor of the invention, can on the surface of the dense porous crystal film of nitride, continued growth other materials
Semiconductor crystal film, to improve sensor performance.
3. dense porous crystal film of the invention is disposably to grow, the simple, specific surface area with preparation process
Greatly and the advantages such as surface-active height.
4. dense porous crystal film of the invention, it is to be constituted by falling cone-shaped hole, it is small is conducive to sample to be tested disengaging
Hole simultaneously has big specific surface area.
5. dense porous crystal film of the invention, hole wall is cone-shaped structure, more solid stabilization.
6. the nitride semi-conductor material and conventional semiconductor material (such as silicon, GaAs, SnO selected2, ZnO etc.) compare, nitrogen
Compound semiconductor material belongs to third generation semiconductor material, has excellent chemical stability, and such as acid-alkali-corrosive-resisting is more suitable for
The semiconductor transducer of high reliability.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the semiconductor porous crystalline thin films sensor of the embodiment of the present invention.
Fig. 2 is the electron micrograph of the semiconductor porous crystalline thin films sensor of the embodiment of the present invention (between plane
Overlook 45 degree of visual angles between the side view of section).
Fig. 3 is the schematic diagram of the section structure of another semiconductor porous crystalline thin films sensor of the embodiment of the present invention.
In figure, macropore 1, aperture 2, the side wall 3 of the hole wall in the hole of falling pointed cone or cone-shaped protrusion, cone-shaped raised 4, substrate 5,
Monocrystal thin films 6, pointed cone angle 7, semiconductor crystal film 8.
Specific embodiment
The present invention is described in detail below in conjunction with embodiment and attached drawing, it should be pointed out that described reality
It applies example and is intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
As shown in figure 1 to 3, present embodiment provides a kind of semiconductor porous crystalline thin films sensor, including 5 He of substrate to ginseng
Dense porous crystal film on 5 surface of substrate is set.Preferably, substrate 5 is quartz substrate, titanium nitride substrate or sapphire
Substrate, most preferably, substrate 5 are Sapphire Substrate.Dense porous crystal film is made of porous cone-shaped raised 4 crosslinking
Network constitutes the hole of falling pointed cone of sharp conical shape between cone-shaped raised 4 side wall 3.Each pointed cone can be considered single micro-
Crystal, therefore the dense porous crystal film being made of many pointed cones belongs to porous crystal structure.Wherein, pass through control deposition temperature
Degree and gaseous source pre-reaction, so that the dense porous crystal film has dense porous composite construction；The dense porous crystal
The hole of the falling pointed cone pore size distribution range of film is wide, from several nanometers are less than to several microns；The porous crystalline thin films are disposable
It deposits, without additional etching technics, there is the simple advantage of preparation process.The hole of falling pointed cone includes cone-shaped aperture
2 and macropore 1, the hole of " pointed cone " shape is formd between adjacent pointed cone, for big cone-shaped raised 4, side wall 3 or top
It is dispersed with aperture 2, wherein the hole point of aperture 2 can be less than several nanometers, and the opening of macropore 1 can achieve 1 micron or bigger.This
The cone-shaped porous composite construction of kind is conducive to sample to be tested (such as gas or liquid) disengaging hole of falling pointed cone, makes the response of sensor
Speed is fast；Big specific surface area can also be obtained, sensitivity is increased, and this pointed cone structure is more solid more steady than grain structure
It is fixed, keep the reliability and stability of sensor more preferable.And it can be realized using single layered porous crystal film and surmount existing structure complexity
Sensor sensitivity, structure is more simple.
Further, dense porous crystal film surface metal-plated membrane can be modified with carboxyl, hydroxyl in metallic film surface
At least one of base or sulfydryl.Preferably, metal film is golden film, golden film with a thickness of 2nm；Surface modification base is hydroxyl or mercapto
Base.Work as testing liquid, such as contains Hg2+The liquid of ion is passed through sensor, Hg2+Ion is in conjunction with the sulfydryl on golden film surface and inhales
The electronics for drawing cone-shaped raised 4 surface, to change the resistance of dense porous crystal film.Therefore, dense porous by testing
The resistance value of crystal film can know Hg in testing liquid2+The content of ion.
Further, the hole wall 3 (or cone-shaped raised 4 side wall 3) in the hole of falling pointed cone is made of, adjacent opposite particular crystal plane
Angle 7 between side wall 3 is between 30 ° to 120 ° (i.e. pointed cone angle 7 is between 30 ° to 120 °).
Further, the material of dense porous crystal film is elemental semiconductor (such as Si, Ge), compound semiconductor
(such as GaAs, AlGaAs, GaN, AlGaN, InGaN, SiC) and metal-oxide semiconductor (MOS) (such as ZnO, SnO2、In2O3Deng) in
One kind.Preferably, the material of dense porous crystal film is nitride (such as GaN, AlGaN, InGaN), with excellent
Chemical stability (acid-alkali-corrosive-resisting) and physical stability (high temperature resistant).Most preferably, the material of dense porous crystal film
For GaN.
Further, the surface of dense porous crystal film is provided with semiconductor crystal film 8.The crystal film 8 is preferred
Oxide semiconductor thin-film, most preferably, crystal film 8 are SnO2Film.
Further, dense porous crystal film is by partly or entirely oxidation.For example, by high annealing, so that institute
Surface region oxidation or the partial oxidation for stating dense porous crystal film, to change the sensitivity to specific gas.For example,
The dense porous crystal film of GaN is insensitive to gases such as methane and ethyl alcohol；By depositing one layer of SnO on the GaN film surface2It is brilliant
Body thin film (including monocrystalline or polycrystalline SnO2Film) after, it not only can be to methane and alcohol sensible, but also to oxygen sensitive.
In addition, the GaN/SnO can be enhanced using the ultraviolet lighting of 340nm~365nm2The sensitivity of multilayer film and the speed of response are (single
Layer SnO2Film, it is insensitive to oxygen, and ultraviolet lighting is also without this reinforcing effect).
Present embodiment also provides a kind of preparation method of semiconductor porous crystalline thin films sensor, in the first set temperature
Under on substrate 5 grow 5nm~5000nm thickness dense porous crystal film, dense porous crystal film is by cone-shaped protrusion
4 and different pore size the hole of falling pointed cone composite crosslinking composition perforated grill structure.Further, in the side wall 3 of cone-shaped protrusion
(hole wall 3 in the hole of falling pointed cone) plating metal on surface film, is modified with carboxyl in metallic film surface.Make dense porous crystalline substance by high annealing
Body thin film partly or entirely aoxidizes.
Further, before growing dense porous crystal film, 1 first is grown on substrate 5 under the second set temperature
~10 microns thick of monocrystal thin films 6, then dense porous crystal film is grown on monocrystal thin films 6；Wherein, the first set temperature ratio
Second set temperature is at least 100 DEG C low.
Wherein, by control depositing temperature and gaseous source pre-reaction, so that the dense porous crystal film has densification
Porous composite construction；The pore size distribution range in the hole of falling pointed cone of the dense porous crystal film is wide, from several nanometers are less than to several
A micron；The porous crystalline thin films are disposably to deposit, without additional etching technics.
The side wall 3 of cone-shaped protrusion is the hole wall 3 in the hole of falling pointed cone.Preferably, the growth of dense porous crystal film is adopted
With chemical vapour deposition technique (CVD) or physical vapour deposition (PVD) (such as MBE) technique, wherein chemical vapour deposition technique (CVD)
It is preferred that with metal-organic chemical vapor deposition equipment technology (MOCVD) therein.
The material that first set temperature is selected according to dense porous crystal film is different and sets, and preferably material is GaN,
When material is GaN, the MOCVD growth temperature of dense porous crystal film is preferably 630 DEG C between 550~700 DEG C.Second sets
Determine the material difference that temperature is selected according to monocrystal thin films 6 and set, preferably material is GaN, the monocrystal thin films when material is GaN
6 MOCVD growth temperature is 1000 DEG C.
The growth temperature of dense porous crystal film is the important parameter for controlling the crystallization degree and pattern of film.For example,
For MOCVD growth GaN material, about 1000 DEG C of high growth temperature is conducive to the migration and arrangement of atom, to form smooth cause
Close imperforate monocrystal thin films (sensitivity is low)；And about 500 DEG C of low-temperature epitaxy, then it will lead to the mixed and disorderly accumulation of atom, thus
Loose porous film is formed, loose porous film is formed by particle packing, and the bond strength between particle is insufficient, therefore film
Structural stability it is poor.Therefore suitable depositing temperature is selected, can be formed between " monocrystal thin films " and " loose porous film "
Between " dense porous crystal film " (as depicted in figs. 1 and 2).When using same growth protocols, with monocrystal thin films 6
Growth temperature is compared, and the growth temperature of dense porous crystal film wants low 100 DEG C~500 DEG C, 370 DEG C preferably low.For life
Long GaN, AlGaN or InGaN film, reducing growth temperature will lead to nitrogen-atoms shortage, i.e. the gaseous sources such as nitrogen or ammonia crack
It can reduce, therefore the lattice nitrogen vacancy in film increases, cause undoped with film in N-shaped conductance at the efficiency of nitrogen-atoms, thus
Improving film surface activity and transducer sensitivity, (nitrogen vacancy helps to adsorb determinand, improves surface-active, to promote
Chemical reaction).Wherein, gaseous source pre-reaction refers to that gaseous source reacts generation molecule in thermal current, is then re-depositing on substrate 5
Surface advantageously forms dense porous composite construction in this way.When growing dense porous crystal film, gas flow temperature is located at 300 DEG C
Between~800 DEG C.In contrast, if growth monocrystal thin films 6, need to reduce gas flow temperature, to reduce pre-reaction, gas at this time
State source only chemically reacts on 5 surface of substrate.
The dense porous crystal film of above-mentioned semiconductor can be used as the sensitive material of sensor.Semiconductor porous crystalline thin films
Sensor is using dense porous crystal film as sensitive material.When film surface adsorb determinand, as ion, atom or
When molecule, since the transfer (electronics shifts between film and determinand) or electrostatic induction of electronics (charge determinand in film
In induce charge), so that the resistance of film or conductivity change.Alternatively, the film also is used as electrochemical sensor
Working electrode will generate signal code when reduction or oxidation reaction occur for determinand and film surface.
Following specific embodiments are provided according to the above embodiment present invention:
Embodiment one
As shown in Figs. 1-2, firstly, using metal-organic chemical vapor deposition equipment (MOCVD) technology, in Sapphire Substrate 5
Surface grow 1~10 micron thick of GaN single crystal film 6, wherein the growth temperature of monocrystal thin films 6 is 1000 DEG C；Followed by
MOCVD technology, in the dense porous crystal film of GaN of 6 surface of monocrystal thin films growth, 5~200nm thickness, it is preferable that growth 20nm
The thick dense porous crystal film of GaN, growth temperature is between 550~700 DEG C, it is preferable that growth temperature is 630 DEG C.
The dense porous crystal film of GaN is made of cone-shaped raised 4 crosslinking.Cone-shaped raised 4 side wall 3 constitutes " sharp
The macropore 1 and aperture 2 of cone cell ", wherein the hole point of aperture 2 can be less than several nanometers, and the opening of macropore 1 can achieve micron amount
Grade (such as Fig. 2).Each pointed cone can be considered single microcrystal, therefore be belonged to by the dense porous crystal film that many pointed cones 4 are constituted
Porous crystal structure.Since the growth temperature of GaN dense porous crystal film is 630 DEG C, substantially less than GaN single crystal film 6
1000 DEG C of growth temperature, therefore n-type conductivity is presented there are nitrogen vacancy abundant in the dense porous crystal film of GaN, and have
High surface-active.
Finally, in the golden film of the surface (i.e. the hole wall 3 in the hole of falling pointed cone) of cone-shaped raised 4 side wall 3 plating 2nm thickness, in gold
Film surface modifies carboxyl, hydroxyl or sulfydryl to adsorb determinand.When such as containing Hg2+The testing liquid of ion is passed through sensor,
Hg2+Ion is in conjunction with the sulfydryl on golden film surface and attracts the electronics on pointed cone surface, to change the electricity of dense porous crystal film
Resistance.Therefore, by testing the resistance value of dense porous crystal film, it can know Hg in testing liquid2+The content of ion.
Embodiment two
Using chemical vapor deposition (CVD) technology, caused in the AlGaN that 5 surface of titanium nitride substrate grows 0.1~10 micron thick
Close porous crystalline thin films, it is preferable that 1 micron of dense porous crystal film of thick AlGaN of growth, growth temperature are located at 700~800
Between DEG C.The dense porous crystal film is made of cone-shaped raised 4 crosslinking.Cone-shaped raised 4 side wall 3 constitutes " pointed cone
The hole of falling pointed cone of shape ".Then, using the dense porous crystal film of AlGaN as the working electrode of electrochemical sensor, work as solution
In determinand (such as H2O2) contacted with the surface AlGaN, and redox reaction occurs, to generate kinetic current.Pass through inspection
The size for surveying kinetic current, can know determinand (such as H in solution2O2) content.
Embodiment three
As shown in figure 3, on 5 surface of quartz substrate, growth 10nm~100nm is thick using chemical vapor deposition (CVD) technology
The dense porous crystal film of InGaN of (preferably 30nm is thick), growth temperature is between 350~500 DEG C.The dense porous crystalline substance
Body thin film is made of cone-shaped raised 4 crosslinking.Cone-shaped raised 4 side wall 3 constitutes the hole of falling pointed cone of " sharp conical shape ".So
Afterwards, on the dense porous crystal film surface InGaN, magnetron sputtering deposits the SnO of 5~100nm thickness2Film 8, it is preferable that deposition
The SnO of 20nm thickness2Film 8.This porous InGaN/SnO2Dense porous crystal film, due to InGaN/SnO2Hetero-junctions
It introduces, improves the sensitivity to specific gas (such as oxygen, ethyl alcohol and formaldehyde), can be used as semiconductor gas sensor.And
And by InGaN/SnO2Dense porous crystal film carries out high-temperature oxydation, so that part InGaN film is oxidized to In2O3
And Ga2O3, advanced optimize the performances such as sensitivity, selectivity and the resistance value of sensor.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of range is protected, although explaining in detail referring to preferred embodiment to the present invention, those skilled in the art are answered
Work as understanding, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the reality of technical solution of the present invention
Matter and range.
Claims (10)
1. a kind of semiconductor porous crystalline thin films sensor, which is characterized in that more including the densification of substrate and setting on substrate
Hole crystal film, the perforated grill structure that the dense porous crystal film is made of cone-shaped protrusion crosslinking, the pointed cone
Constitute the hole of falling pointed cone of sharp conical shape between the side wall of shape protrusion.
2. a kind of semiconductor porous crystalline thin films sensor according to claim 1, which is characterized in that described cone-shaped convex
The side wall risen is semiconductor crystal face, and the angle of the pointed cone is between 30 ° to 120 °.
3. a kind of semiconductor porous crystalline thin films sensor according to claim 2, which is characterized in that the hole of falling pointed cone
Pore-size distribution from nanometer scale to micron dimension.
4. a kind of semiconductor porous crystalline thin films sensor according to any one of claim 1-3, which is characterized in that institute
The material for stating dense porous crystal film is one of elemental semiconductor, compound semiconductor and metal-oxide semiconductor (MOS).
5. a kind of semiconductor porous crystalline thin films sensor according to claim 4, which is characterized in that described dense porous
The material of crystal film is nitride.
6. a kind of semiconductor porous crystalline thin films sensor described in any one of -4 according to claim 1, which is characterized in that institute
State the semiconductor crystal film that dense porous crystal film surface is provided with other materials.
7. a kind of semiconductor porous crystalline thin films sensor according to claim 6, which is characterized in that the semiconductor die
Body thin film is oxide semiconductor thin-film.
8. a kind of semiconductor porous crystalline thin films sensor, feature described in any one of -4,6,7 exist according to claim 1
In the dense porous crystal film surface is provided with metal film, is modified with carboxyl, carboxyl or sulfydryl in metallic film surface.
9. a kind of semiconductor porous crystalline thin films sensor, feature described in any one of -4,6,7 exist according to claim 1
In the dense porous crystal film is by partly or entirely oxidation.
10. according to claim 1,3,4 and 6 it is any one of described described in a kind of semiconductor porous crystalline thin films sensor system
Preparation Method, it is characterised in that the growth temperature of the dense porous crystal film, than the monocrystal thin films under similar growth conditions
Growth temperature is at least 100 DEG C low.
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Cited By (2)
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|---|---|---|---|---|
| CN112195440A (en) * | 2020-10-10 | 2021-01-08 | 中国科学院宁波材料技术与工程研究所 | Foamed nickel/nickel nitride composite material and preparation method and application thereof |
| CN113174584A (en) * | 2021-01-16 | 2021-07-27 | 黄辉 | Porous nitride electrode and preparation method and application thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1388267A (en) * | 2002-03-20 | 2003-01-01 | 中山大学 | Locating and filming process to tip of micro pointed cone |
| US20120133027A1 (en) * | 2007-01-17 | 2012-05-31 | Consiglio Nazionale Delle Ricerche | Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process |
| CN102496665A (en) * | 2011-12-14 | 2012-06-13 | 中微光电子(潍坊)有限公司 | Structure of silicon-substrate GaN-based light-emitting diode (LED) and manufacturing method for silicon-substrate GaN-based LED |
| US20120286286A1 (en) * | 2011-05-13 | 2012-11-15 | Jung Sukkoo | Non-polar nitride-based light emitting device and method for fabricating the same |
| CN203205451U (en) * | 2013-03-18 | 2013-09-18 | 深圳信息职业技术学院 | Nano nonpolar surface GaN cone array material |
| CN103403839A (en) * | 2011-03-03 | 2013-11-20 | 欧司朗光电半导体有限公司 | Method for producing a thin-film semiconductor body, and thin-film semiconductor body |
| US20140353582A1 (en) * | 2012-02-20 | 2014-12-04 | Seoul Viosys Co., Ltd. | High efficiency light emitting diode and method of fabricating the same |
| CN105869967A (en) * | 2016-04-28 | 2016-08-17 | 中山大学 | Thermally-assisted field electron emission cathode structure and preparation method thereof |
| CN107170657A (en) * | 2017-05-15 | 2017-09-15 | 中国电子科技集团公司第十二研究所 | A kind of preparation method without integrated grid pointed cone array field emission cathode |
-
2019
- 2019-07-29 CN CN201910687309.5A patent/CN110412082B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1388267A (en) * | 2002-03-20 | 2003-01-01 | 中山大学 | Locating and filming process to tip of micro pointed cone |
| US20120133027A1 (en) * | 2007-01-17 | 2012-05-31 | Consiglio Nazionale Delle Ricerche | Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process |
| CN103403839A (en) * | 2011-03-03 | 2013-11-20 | 欧司朗光电半导体有限公司 | Method for producing a thin-film semiconductor body, and thin-film semiconductor body |
| US20120286286A1 (en) * | 2011-05-13 | 2012-11-15 | Jung Sukkoo | Non-polar nitride-based light emitting device and method for fabricating the same |
| CN102496665A (en) * | 2011-12-14 | 2012-06-13 | 中微光电子(潍坊)有限公司 | Structure of silicon-substrate GaN-based light-emitting diode (LED) and manufacturing method for silicon-substrate GaN-based LED |
| US20140353582A1 (en) * | 2012-02-20 | 2014-12-04 | Seoul Viosys Co., Ltd. | High efficiency light emitting diode and method of fabricating the same |
| CN203205451U (en) * | 2013-03-18 | 2013-09-18 | 深圳信息职业技术学院 | Nano nonpolar surface GaN cone array material |
| CN105869967A (en) * | 2016-04-28 | 2016-08-17 | 中山大学 | Thermally-assisted field electron emission cathode structure and preparation method thereof |
| CN107170657A (en) * | 2017-05-15 | 2017-09-15 | 中国电子科技集团公司第十二研究所 | A kind of preparation method without integrated grid pointed cone array field emission cathode |
Non-Patent Citations (2)
| Title |
|---|
| 郭仕宽: "SiC衬底GaN基材料MOCVD生长及HEMT器件研制", 《中国优秀博硕士学位论文全文数据库（硕士）信息科技辑》 * |
| 郭仕宽: "SiC衬底GaN基材料MOCVD生长及HEMT器件研制", 《中国优秀博硕士学位论文全文数据库（硕士）信息科技辑》, 15 February 2016 (2016-02-15), pages 1 - 5 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112195440A (en) * | 2020-10-10 | 2021-01-08 | 中国科学院宁波材料技术与工程研究所 | Foamed nickel/nickel nitride composite material and preparation method and application thereof |
| CN112195440B (en) * | 2020-10-10 | 2022-10-11 | 中国科学院宁波材料技术与工程研究所 | Foamed nickel/nickel nitride composite material and preparation method and application thereof |
| CN113174584A (en) * | 2021-01-16 | 2021-07-27 | 黄辉 | Porous nitride electrode and preparation method and application thereof |
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