CN112899645A - Treatment of Ag2Method for preparing S film - Google Patents

Treatment of Ag2Method for preparing S film Download PDF

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CN112899645A
CN112899645A CN201911136172.0A CN201911136172A CN112899645A CN 112899645 A CN112899645 A CN 112899645A CN 201911136172 A CN201911136172 A CN 201911136172A CN 112899645 A CN112899645 A CN 112899645A
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reaction chamber
film
silver
atomic layer
layer deposition
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卢维尔
明帅强
夏洋
李楠
赵丽莉
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Institute of Microelectronics of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a method for treating Ag2S film method, placing the silicon substrate in a reaction chamber of atomic layer deposition, and vacuumizing the reaction chamber; filling the silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, and heating the solid source heating source bottle to a first temperature to obtain silver trimethylphosphine hexafluoroacetylacetone vapor; the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time; and introducing the hexamethyldisilazane into the reaction chamber according to a second pulse time, and cleaning the reaction chamber by using the nitrogen for a second cleaning time to obtain the silver sulfide thin film with the first thickness. To achieveThe thickness of the silver sulfide thin film is accurately controllable in the single atomic layer magnitude, and the method can be suitable for large-scale production.

Description

Treatment of Ag2Method for preparing S film
Technical Field
The inventionRelates to the technical field of semiconductors, in particular to a method for processing Ag2S film method.
Background
In conventional materials, metal materials and alloys have room temperature ductility, and metal bonds can be plastically deformed by an external force. While inorganic semiconducting materials and ceramic insulating materials are generally brittle materials. Recent studies have shown that silver sulfide is an inorganic semiconductor material having excellent ductility similar to metals at room temperature. The material has mechanical properties different from those of conventional inorganic semiconductor materials, particularly good extensibility and bendability, and is expected to be widely applied to the field of flexible electronics. alpha-Ag2The excellent ductility of the S material is mainly due to its intrinsic structure and chemical bonds. The conditions for ductility are mainly two-fold: (1) the slippage of atoms, defects or interfaces along a specific crystal plane (with a smaller slippage energy barrier EB) can be realized; (2) there is a relatively strong interatomic interaction force in the slip plane to ensure the integrity of the material (with a large splitting energy level Ec). In combination, alpha-Ag2S has a small slip barrier and a large splitting energy level, so that it has excellent ductility.
At present, silver sulfide bulk phase materials are mainly prepared by an ingot casting method and a discharge plasma sintering method; while silver sulfide thin-film materials are mainly obtained by spin coating of quantum dot colloidal solutions, these preparation methods are not suitable for industrial production of semiconductors.
The thickness of the silver sulfide film can not be accurately controlled in the prior art, and meanwhile, the silver sulfide film can not be produced on a large scale.
Disclosure of Invention
The embodiment of the invention provides a method for processing Ag2The method of the S film is used for solving the technical problems that the thickness of the silver sulfide film cannot be accurately controlled and the silver sulfide film cannot be produced in a large scale in the prior art, achieves the purposes that the silver sulfide film maintains good three-dimensional shape retention, the thickness of the film is accurately controllable in the order of a monoatomic layer, the operation is simple, the method can be compatible with the existing semiconductor production line and is suitable for large-scale productionThe effect of the operation is good.
In order to solve the above problems, embodiments of the present invention provide a method for processing Ag2A method of S-film, the method comprising: placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and respectively heating a base, the reaction chamber and a pipeline to a specified temperature; filling the silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, and heating the solid source heating source bottle to a first temperature to obtain silver trimethylphosphine hexafluoroacetylacetone vapor; the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time; passing the hexamethyldisilazane into the reaction chamber according to a second pulse time, purging the reaction chamber with the nitrogen gas for a second purge time; and carrying out atomic layer deposition on the trimethyl phosphine hexafluoro acetylacetone silver vapor and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with a first thickness.
Preferably, the atomic layer deposition of the silver trimethylphosphine hexafluoroacetylacetone and the hexamethyldisilazane in the reaction chamber to obtain a silver sulfide thin film with a first thickness further comprises: and circularly performing 200-800 atomic layer deposition on the trimethylphosphine hexafluoroacetylacetone silver and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with 200-800 times of first thickness, wherein the 200-800 times of first thickness is a target thickness.
Preferably, the specified heating temperature ranges of the substrate, the reaction chamber and the pipeline are all 100-200 ℃.
Preferably, the first temperature is 100-110 ℃.
Preferably, the first pulse time is in the range of 1-4S.
Preferably, the first cleaning time is 20-60 s.
Preferably, the second pulse time is in the range of 0.2-0.8S.
Preferably, the second cleaning time is 20-60 s.
Preferably, the carrier gas flow rate of the trimethylphosphine silver hexafluoroacetylacetonate vapor and the hexamethyldisilazane into the reaction chamber is 45 sccm.
Preferably, the flow rate of the nitrogen gas purging the reaction chamber is 30 sccm.
One or more technical solutions in the embodiments of the present invention at least have one or more of the following technical effects:
the embodiment of the invention provides a method for processing Ag2A method of S-film, the method comprising: placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and respectively heating a base, the reaction chamber and a pipeline to a specified temperature; filling the silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, and heating the solid source heating source bottle to a first temperature to obtain silver trimethylphosphine hexafluoroacetylacetone vapor; the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time; passing the hexamethyldisilazane into the reaction chamber according to a second pulse time, purging the reaction chamber with the nitrogen gas for a second purge time; and carrying out atomic layer deposition on the trimethyl phosphine hexafluoro acetylacetone silver vapor and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with a first thickness. The silicon substrate is placed in the vacuumized reaction chamber, the silicon substrate, the reaction chamber and the like are heated, trimethyl phosphine hexafluoro acetylacetone silver pulse and hexamethyl disilthiane pulse are introduced into the reaction chamber, the reaction chamber is cleaned by nitrogen, and atomic layer deposition is carried out in the chamber to obtain the silver sulfide film. The method solves the technical problems that the thickness of the silver sulfide film can not be accurately controlled and the silver sulfide film can not be produced on a large scale in the prior art, achieves the purpose that the silver sulfide film maintains good three-dimensional shape retention, has the film thickness accurately controllable in the order of a monoatomic layer, is simple to operate, and can be matched with the prior artSome semiconductor production lines are compatible and can be suitable for large-scale production.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
FIG. 1 is a schematic view of Ag treated in examples of the present specification2S thin film method.
Detailed Description
The embodiment of the invention provides a method for processing Ag2The method of the S film is used for solving the technical problems that the thickness of the silver sulfide film cannot be accurately controlled and the silver sulfide film cannot be produced in a large scale in the prior art, achieves the technical effects that the silver sulfide film maintains good three-dimensional shape retention, the thickness of the film is accurately controllable in a single atomic layer level, the operation is simple, the method can be compatible with the existing semiconductor production line, and the method can be suitable for large-scale production.
According to the technical scheme in the embodiment of the invention, Ag is treated2The method of the S film comprises the steps of placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and heating a base, the reaction chamber and a pipeline to a specified temperature respectively; filling the silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, and heating the solid source heating source bottle to a first temperature to obtain silver trimethylphosphine hexafluoroacetylacetone vapor; the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time; passing the hexamethyldisilazane into the reaction chamber according to a second pulse time, purging the reaction chamber with the nitrogen gas for a second purge time; the trimethyl phosphine hexafluoro acetylacetone silver vapor and the hexamethyl disilthiane are subjected to atomic layer deposition in the reaction chamber to obtainThe silver sulfide film with the first thickness is obtained, the silver sulfide film can maintain good three-dimensional shape retention, the thickness of the film is accurately controllable in the order of magnitude of a monoatomic layer, the operation is simple, the silver sulfide film can be compatible with the existing semiconductor production line, and the silver sulfide film can be suitable for large-scale production.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
The embodiment of the invention provides a method for processing Ag2Referring to fig. 1, the method of S film includes steps 110 to 150:
step 110: placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and respectively heating a base, the reaction chamber and a pipeline to a specified temperature;
further, the heating specified temperature ranges of the substrate, the reaction chamber and the pipeline are all 100-200 ℃.
Specifically, Ag was treated in the examples of the present application2The method of the S film comprises the steps of placing a silicon substrate in a vacuumized reaction chamber, heating the silicon substrate, the reaction chamber and the like, introducing trimethyl phosphine hexafluoro acetylacetone silver pulses and hexamethyl disilthiane pulses into the reaction chamber, simultaneously cleaning the reaction chamber with nitrogen, and performing atomic layer deposition in the chamber to obtain the silver sulfide film. The method has important significance for the application of silver sulfide in the fields of storage, logic devices, storage and calculation integration, flexible devices and the like. Wherein, alpha-Ag2The S crystal has a zigzag folded laminar monoclinic structure at room temperature, and the band gap is about 1.03 eV; the room temperature conductivity of the alloy is 0.09-0.16Sm-1And the electrical property can be freely regulated and controlled in a semiconductor region. alpha-Ag2The ductility of S material is several orders of magnitude higher than that of other semiconductor, even better than that of some alloy material, its tensile tension can be up to 4.2%, compression tension can be up to above 50%, and bending tension can be over 20%. Conventional semiconductor materials are generally difficult to withstand any plastic deformation and have excellent ductility of alpha-Ag2The discovery of the S material breaks through the law of brittleness of the semiconductor material, so that the silver sulfide thin film is generated by adopting atomic layer deposition. Atomic Layer Deposition (ALD) is a method by which a substance can be deposited on a substrate surface layer by layer in the form of a single atomic film. ALD is a self-limiting surface growth approach, so ALD can achieve precise control of film thickness on the order of a single atomic layer and 100% uniform conformal film coverage over three-dimensional nanostructures. Atomic layer deposition technology has been used in the microelectronics field as a key technology for the fabrication of high quality dielectric layers for Dynamic Random Access Memory (DRAMs) trench capacitors and high dielectric constant gate oxide layers for CMOS transistors. The silver sulfide film is deposited by the ALD technology, so that the silver sulfide film is compatible with the existing semiconductor production line and is suitable for large-scale production. Firstly, placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and respectively heating the substrate, the reaction chamber and a pipeline to specified temperatures, wherein the specified heating temperature ranges of the substrate, the reaction chamber and the pipeline are all 100-200 ℃.
Step 120: filling the silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, and heating the solid source heating source bottle to a first temperature to obtain silver trimethylphosphine hexafluoroacetylacetone vapor;
further, the first temperature is 100-110 ℃.
Specifically, since the silver trimethylphosphine hexafluoroacetylacetonate is in a solid state at room temperature and has a low saturated vapor pressure, the silver trimethylphosphine hexafluoroacetylacetonate needs to be heated to 110 ℃ by a solid source heating device carried by the atomic layer deposition equipment. The method comprises the steps of filling trimethyl phosphine hexafluoro-acetylacetone silver into a solid source heating source bottle of an atomic layer deposition device in a glove box, and enabling the solid source heating source bottle to reach a first temperature of 100-110 ℃ until the vapor pressure of each pulse is stable. Ensuring that the trimethylphosphine hexafluoroacetylacetone silver has enough vapor pressure pulse to enter a carrier gas system, and finally conveying the trimethylphosphine hexafluoroacetylacetone silver vapor to the reaction chamber by the carrier gas system.
Step 130: the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time;
step 140: passing the hexamethyldisilazane into the reaction chamber according to a second pulse time, purging the reaction chamber with the nitrogen gas for a second purge time;
further, the range of the first pulse time is 1-4S. Further, the first cleaning time is 20-60 s. Further, the second pulse time is in a range of 0.2-0.8S. Further, the second cleaning time is 20-60 s. Further, the flow rate of the carrier gas for introducing the trimethylphosphine hexafluoroacetylacetone silver vapor and the hexamethyldisilazane into the reaction chamber is 45 sccm. Further, the flow rate of the nitrogen gas for cleaning the reaction chamber is 30 sccm.
Specifically, hexamethyldisilazane, which is a liquid at room temperature and has a sufficient saturated vapor pressure at room temperature, does not need to be heated, since it is charged into a source bottle of the atomic layer deposition apparatus. When the temperature of the substrate reaches the preset value of 100-: and introducing the trimethyl phosphine hexafluoroacetylacetone silver steam into the reaction chamber according to the first pulse time of 1-4S, and cleaning the reaction chamber by using nitrogen for the first cleaning time of 20-60S. The flow rate of carrier gas introduced into the reaction chamber by the silver trimethylphosphine hexafluoroacetylacetone vapor is 45sccm, and the flow rate of nitrogen for cleaning the reaction chamber is 30 sccm. And introducing the hexamethyldisilazane into the reaction chamber according to a second pulse time of 0.2-0.8S, and cleaning the reaction chamber by using the nitrogen for a second cleaning time of 20-60S. The flow rate of carrier gas introduced into the reaction chamber by the hexamethyldisilazane is 45sccm, and the flow rate of nitrogen for cleaning the reaction chamber is 30 sccm.
Step 150: and carrying out atomic layer deposition on the trimethyl phosphine hexafluoro acetylacetone silver vapor and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with a first thickness.
Further, after the atomic layer deposition of the trimethylphosphine hexafluoroacetylacetone silver and the hexamethyldisilthiane is carried out in the reaction chamber to obtain a silver sulfide thin film with a first thickness, the method further comprises the following steps: and circularly performing 200-800 atomic layer deposition on the trimethylphosphine hexafluoroacetylacetone silver and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with 200-800 times of first thickness, wherein the 200-800 times of first thickness is a target thickness.
Specifically, 200-800 steps 130 and 140 are executed in a circulating manner, so that atomic layer deposition is carried out on the trimethylphosphine hexafluoroacetylacetone silver and the hexamethyldisilthiane in the reaction chamber, a silver sulfide film is obtained, wherein the silver sulfide film with the target thickness is obtained through the atomic layer deposition after 200-800 steps 130 and 140 are executed in a circulating manner, the silver sulfide film has good three-dimensional shape retention, the thickness of the film is accurately controllable in the order of magnitude of a monoatomic layer, and the wide application of the silver sulfide in the field of flexible electronics is facilitated.
The technical scheme provided in the embodiment of the application at least has the following technical effects or advantages:
the embodiment of the invention provides a method for processing Ag2Method of treating S film, Ag treated by the method2The method of the S film comprises the following steps: placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and respectively heating a base, the reaction chamber and a pipeline to a specified temperature; the method comprises the steps of filling silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, heating the solid source heating source bottle to a first temperature to obtain trimethylphosphineSilver hexafluoroacetylacetonate vapor; the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time; passing the hexamethyldisilazane into the reaction chamber according to a second pulse time, purging the reaction chamber with the nitrogen gas for a second purge time; and carrying out atomic layer deposition on the trimethyl phosphine hexafluoro acetylacetone silver vapor and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with a first thickness. The silicon substrate is placed in the vacuumized reaction chamber, the silicon substrate, the reaction chamber and the like are heated, trimethyl phosphine hexafluoro acetylacetone silver pulse and hexamethyl disilthiane pulse are introduced into the reaction chamber, the reaction chamber is cleaned by nitrogen, and atomic layer deposition is carried out in the chamber to obtain the silver sulfide film. The method solves the technical problems that the thickness of the silver sulfide film cannot be accurately controlled and the silver sulfide film cannot be produced on a large scale in the prior art, achieves the technical effects that the silver sulfide film maintains good three-dimensional shape retention, the thickness of the film is accurately controllable in the order of a monoatomic layer, the operation is simple, the method can be compatible with the existing semiconductor production line, and the method can be suitable for large-scale production.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.

Claims (10)

1. Treatment of Ag2S film method, characterized in that said methodThe method comprises the following steps:
placing a silicon substrate in a reaction chamber for atomic layer deposition, vacuumizing the reaction chamber, and respectively heating a base, the reaction chamber and a pipeline to a specified temperature;
filling the silver trimethylphosphine hexafluoroacetylacetone into a solid source heating source bottle of an atomic layer deposition device, and heating the solid source heating source bottle to a first temperature to obtain silver trimethylphosphine hexafluoroacetylacetone vapor;
the method comprises the steps of filling hexamethyldisilazane into a source bottle of the atomic layer deposition equipment, introducing the trimethylphosphine hexafluoroacetylacetone silver vapor into the reaction chamber according to a first pulse time, and cleaning the reaction chamber by using nitrogen for a first cleaning time;
passing the hexamethyldisilazane into the reaction chamber according to a second pulse time, purging the reaction chamber with the nitrogen gas for a second purge time;
and carrying out atomic layer deposition on the trimethyl phosphine hexafluoro acetylacetone silver vapor and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with a first thickness.
2. Treated Ag according to claim 12The method for preparing the S film is characterized in that atomic layer deposition is carried out on the trimethylphosphine hexafluoroacetylacetone silver and the hexamethyldisilthiane in the reaction chamber, and after a silver sulfide film with a first thickness is obtained, the method further comprises the following steps:
and circularly performing 200-800 atomic layer deposition on the trimethylphosphine hexafluoroacetylacetone silver and the hexamethyldisilthiane in the reaction chamber to obtain a silver sulfide film with 200-800 times of first thickness, wherein the 200-800 times of first thickness is a target thickness.
3. Treated Ag according to claim 12The method of the S film is characterized in that the specified heating temperature ranges of the substrate, the reaction chamber and the pipeline are all 100-200 ℃.
4. Such asTreated Ag according to claim 12The method for preparing the S film is characterized in that the first temperature is 100-110 ℃.
5. Treated Ag according to claim 12The method for manufacturing the S film is characterized in that the first pulse time ranges from 1S to 4S.
6. Treated Ag according to claim 12The method for cleaning the S film is characterized in that the first cleaning time is 20-60S.
7. Treated Ag according to claim 12The method of S film, characterized in that the second pulse time is in the range of 0.2-0.8S.
8. Treated Ag according to claim 12The method for cleaning the S film is characterized in that the second cleaning time is 20-60S.
9. Treated Ag according to claim 12The method for preparing the S film is characterized in that the flow rate of carrier gas for introducing the trimethylphosphine hexafluoroacetylacetone silver vapor and the hexamethyldisilathiane into the reaction chamber is 45 sccm.
10. Treated Ag according to claim 12The method for cleaning the S film is characterized in that the flow rate of the nitrogen for cleaning the reaction chamber is 30 sccm.
CN201911136172.0A 2019-11-19 2019-11-19 Treatment of Ag2Method for preparing S film Pending CN112899645A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100133529A1 (en) * 2008-09-19 2010-06-03 Lumenz Llc Thin light-emitting devices and fabrication methods
US20140027775A1 (en) * 2012-07-24 2014-01-30 Micron Technology, Inc. Methods of forming a metal chalcogenide material, related methods of forming a semiconductor device structure, and a related semiconductor device structure
US9831427B1 (en) * 2014-08-21 2017-11-28 National Technology & Engineering Solutions Of Sandia, Llc Ion-barrier for memristors/ReRAM and methods thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100133529A1 (en) * 2008-09-19 2010-06-03 Lumenz Llc Thin light-emitting devices and fabrication methods
US20140027775A1 (en) * 2012-07-24 2014-01-30 Micron Technology, Inc. Methods of forming a metal chalcogenide material, related methods of forming a semiconductor device structure, and a related semiconductor device structure
US9831427B1 (en) * 2014-08-21 2017-11-28 National Technology & Engineering Solutions Of Sandia, Llc Ion-barrier for memristors/ReRAM and methods thereof

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