CN112886545B - Driving circuit with short-circuit protection function suitable for high-voltage solid-state power controller - Google Patents
Driving circuit with short-circuit protection function suitable for high-voltage solid-state power controller Download PDFInfo
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- CN112886545B CN112886545B CN202110141765.7A CN202110141765A CN112886545B CN 112886545 B CN112886545 B CN 112886545B CN 202110141765 A CN202110141765 A CN 202110141765A CN 112886545 B CN112886545 B CN 112886545B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
Abstract
The invention discloses a driving circuit with a short-circuit protection function and suitable for a high-voltage solid-state power controller, wherein the driving circuit comprises a switched-on short-circuit protection module and a switched-on short-circuit protection module, and the switched-on short-circuit protection module comprises a driving chip W2, a capacitor C16, a capacitor C24 and a resistor GR 1; the short-circuit back-connection module comprises a driving chip W1 and a resistor GR 2. The invention controls the voltage change of the output end of the driving chip by controlling the logic signal of the input end of the driving chip, and realizes the control of the discharge process of the grid charges of the SiC MOSFET by matching with a capacitor, a resistor and a diode combined circuit which are connected with the driving chip, thereby realizing the short-circuit protection function of short-circuit after being switched on and switching on after being switched on. The invention realizes the short-circuit protection function design of the high-voltage solid-state power controller with lower cost, and has great significance for the production of the solid-state power controller with high reliability and high integration level.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and relates to a driving circuit with a short-circuit protection function, which is suitable for a 270V high-voltage solid-state power controller.
Background
The most important characteristic of the solid-state power controller is short-circuit protection, while the short circuit of the 270V high-voltage solid-state power controller is the key point and difficulty of research, and general literature data only provides a general or theoretical solution, but no effective solution is provided. Compared with low voltage and alternating current, the difficulty of high-voltage short-circuit protection is that the characteristics of short response time and large overshoot voltage exist during high-voltage short circuit, and because the voltage is high, the relative di/dt during short circuit is large and basically reaches more than 30A/us or even larger at 270V. If the short-circuit protection circuit is not designed reasonably, a large spike voltage or an excessive transient current can be generated, and finally the SiC MOSFET of the output power device is damaged.
Disclosure of Invention
The invention aims to provide a driving circuit with a short-circuit protection function, which is suitable for a high-voltage solid-state power controller. The invention realizes the short-circuit protection function design of the high-voltage solid-state power controller with lower cost, and has great significance for the production of the solid-state power controller with high reliability and high integration level.
The purpose of the invention is realized by the following technical scheme:
a drive circuit with short-circuit protection function suitable for a high-voltage solid-state power controller comprises a switch-on short-circuit protection module and a switch-on short-circuit protection module, wherein:
the short-circuit protection module comprises a driving chip W2, a capacitor C16, a capacitor C24, a resistor GR1 and a diode D7 after being switched on;
the short-circuit back connection module comprises a driving chip W1 and a resistor GR 2;
the input end of the driving chip W2 is connected with a logic signal of short-circuit protection, and the output end of the driving chip W2 is respectively connected with one end of a capacitor C16, a capacitor C24 and a resistor GR 1;
the other ends of the capacitor C16 and the capacitor C24 are connected with the cathode of the diode D7, and the anode of the diode D7 is connected with one end of the resistor GR3 and the gate of the SiC MOSFET respectively;
the other end of the resistor GR3 is connected with the source electrode of the SiC MOSFET, and the drain electrode and the source electrode of the SiC MOSFET are connected with the load in series;
the input end of the driving chip W1 is connected with a logic signal of short-circuit protection, the output end of the driving chip W1 is connected with one end of a resistor GR2, and the other end of the resistor GR2 is connected with the anode of the diode and one end of the resistor GR3 is connected with the grid of the SiC MOSFET.
In the invention, the function realization steps of the short-circuit protection module after the connection are as follows: (1) the driving chips W1 and W2 connected with the gates of the SiC MOSFETs receive high-level signals, the output end voltages of the driving chips W1 and W2 are 12V driving voltages, and the load side is switched on; (2) after the short circuit is connected, the short circuit protection is triggered, so that the driving chip W2 receives a low level signal, and the voltage of the output end of the driving chip W2 is 0V. Because the capacitor voltage can not change suddenly, the equivalent gate-source capacitance of the C16, C24 and SiC MOSFET divides voltage, so that the gate voltage is rapidly reduced to be close to the Miller platform; (3) the gate discharges slowly through GR1 and GR3 resistors, completing the load side disconnect.
In the invention, the function of switching on the protection module after short circuit is realized by the following steps: (1) the driving chips W1 and W2 connected with the gates of the SiC MOSFETs receive high-level signals, and the output end voltages of the driving chips W1 and W2 are 12V driving voltages; (2) after short circuit, the voltage of the switch-on grid electrode rises to the vicinity of the Miller platform to trigger short circuit protection, so that the drive chip W1 receives a low-level signal, and the voltage of the output end of the drive chip W1 is 0V; (3) the gate discharges through resistor GR3, completing the load side disconnect.
Compared with the prior art, the invention has the following advantages:
1. the 270V solid-state power controller driving circuit has the functions of short circuit after connection and connection protection after short circuit, and has high reliability and integration level.
2. The circuit designed by the invention has lower cost, and fewer and low-cost components realize better short-circuit protection function by a simple and convenient method.
3. The invention realizes the test of the short-circuit protection function by matching with the auxiliary sampling module and the logic control module, and verifies that the circuit design has the characteristics of quick response and small voltage overshoot.
Drawings
FIG. 1 is a schematic diagram of a driving circuit of the present invention;
FIG. 2 is a test waveform of the short-circuit protection function of the present invention after switching on;
fig. 3 is a test waveform of the protection function after short circuit according to the present invention.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings, but not limited thereto, and any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention shall be covered by the protection scope of the present invention.
The invention provides a driving circuit with a short-circuit protection function suitable for a high-voltage solid-state power controller, as shown in fig. 1, the driving circuit simultaneously has a short-circuit protection module after connection and a connection protection module after short circuit, wherein:
the short-circuit protection module comprises a driving chip W2, a ceramic chip capacitor C16, a ceramic chip capacitor C24, a resistor GR1 and a diode D7 after being switched on;
the short-circuit back connection module comprises a driving chip W1 and a resistor GR 2;
the input end of the driving chip W2 is connected with a logic signal for short-circuit protection, and the output end of the driving chip W2 is connected with two I-type ceramic capacitors C16 and C24 which are connected in parallel and a resistor GR 1; the other ends of the capacitors C16 and C24 are connected with the cathode of the diode D7, and the anode of the diode D7 is connected with the resistors GR2 and GR3 and the gate of the SiC MOSFET; the other side of the resistor GR3 is connected with a source electrode of the SiC MOSFET, and a drain electrode and the source electrode of the SiC MOSFET are connected with the load in series;
the input end of the driving chip W1 is connected with a logic signal for short-circuit protection, the output end of the driving chip W1 is connected with a resistor GR2, and the other end of the resistor GR2 is connected with the gate of the SiC MOSFET in parallel with a resistor GR 3.
In the invention, the function realization steps of the short-circuit protection module after the connection are as follows: (1) the drive chip W2 adopts UCC27517DBV, the instantaneous output current reaches 4A, and the output establishment time is about 10 ns. First, the control signal DR12 of the driver chips W1 and W2 is set to a high level, and a 12V driving voltage is output to turn on the load side. (2) After the load side short circuit is switched on, the short circuit protection is triggered, so that the driving chip W2 receives a low level signal, and the voltage at the output end of the chip W2 is 0V. As shown in FIG. 1, the grid of the SiC MOSFET is connected in parallel with two I-type ceramic capacitor capacitors C16 and C24 with good stability, the total capacitance value of the SiC MOSFET is close to the junction capacitance of the SiC MOSFET, the junction capacitance typical value of the SiC MOSFET is 18.5nF, and because the capacitance value of the I-type ceramic capacitor is small, two 10nF capacitors are connected in parallel during design. Since the capacitor voltage can not change suddenly, the equivalent gate-source capacitance of the C16 and C24 and the SiC MOSFET is divided, so that the gate voltage is rapidly reduced to be close to the Miller platform. (3) The grid electrode continues to slowly discharge through resistors GR1 and GR3, the current cannot generate large peak voltage, and the short-circuit protection function of the high-voltage controller is achieved. (4) The test results in a waveform as shown in fig. 2. In the figure, curve 2 is the driving voltage; curve 3 is the output current, 50A per cell; curve 4 is the drain-source voltage of the SiC MOSFET; the current value of the short-circuit protection point is 70A, the level of the output end of the short-circuit response circuit is inverted after the current value reaches the point, the DR12 is controlled to be low by a logic circuit in the controller, the grid-source voltage rapidly drops to the Miller platform, the SiC MOSFET starts to be disconnected, then the driving voltage is slowly reduced, the overshoot voltage is small, and the maximum voltage is 300V. Because the driving voltage is gradually reduced, the turn-off time is increased by about 1us, the current is continuously increased in the process, the maximum short-circuit current does not exceed 110A, the current rise time is 2us, and the protection is completed by about 10 us.
In the invention, the function of switching on the protection module after short circuit is realized by the following steps: (1) the driving chips W1, W2 receive high level signals, and the output end voltage is 12V driving voltage. (2) After short circuit, the voltage of the on gate rises to the vicinity of the Miller platform to trigger short circuit protection, so that the driving chip W1 receives a low level signal, and the voltage of the output end of the chip W1 is 0V. (3) The gate discharges through resistor GR3, completing the load side disconnect. (4) The test waveform is shown in FIG. 3, where curve 2 is the driving voltage; curve 3 is the output current, 50A per cell; curve 4 is the output 270V supply voltage. The short-circuit protection process comprises the following steps: when the output is switched on, the grid voltage of the SiC MOSFET is gradually increased, the SiC MOSFET enters an amplification region after the grid voltage exceeds the starting voltage, the output current is gradually increased along with the increase of the driving voltage, and the voltage of an output power supply is slightly reduced. When the output current reaches the short-circuit point, the gate voltage slowly drops because the input terminal of the short-circuit protection driving chip W1 is triggered to become low level. At the moment, the SiC MOSFET still works in the amplification region, so that the output current is gradually reduced immediately after the grid voltage is reduced, and the output power supply also has peak voltage at the moment. It can be seen from the figure that the maximum current is approximately 70A and the maximum voltage is approximately 300V when the controller is in short circuit, the time when the current is above 50A is not more than 10us, and the controller still works in a safe area and has a large margin. In addition, the time from the switch-on to the driving start to descend is not more than 50us, and the time is used as the boundary time of two working conditions of switch-on during short circuit of the controller and short circuit after switch-on.
Claims (2)
1. A drive circuit with short-circuit protection function suitable for a high-voltage solid-state power controller is characterized by comprising a short-circuit protection module after being connected and a connection protection module after being short-circuited, wherein:
the short-circuit protection module comprises a driving chip W2, a capacitor C16, a capacitor C24, a resistor GR1 and a diode D7 after being switched on;
the drive chip W2 adopts UCC27517 DBV;
the short-circuit back connection module comprises a driving chip W1 and a resistor GR 2;
the input end of the driving chip W2 is connected with a logic signal of short-circuit protection, and the output end of the driving chip W2 is respectively connected with one end of a capacitor C16, a capacitor C24 and a resistor GR 1;
the other ends of the capacitor C16 and the capacitor C24 are connected with the cathode of the diode D7, and the anode of the diode D7 is connected with one end of the resistor GR3 and the gate of the SiC MOSFET respectively;
the other end of the resistor GR3 is connected with the source electrode of the SiC MOSFET, and the drain electrode and the source electrode of the SiC MOSFET are connected with the load in series;
the input end of the driving chip W1 is connected with a logic signal of short-circuit protection, the output end of the driving chip W1 is connected with one end of a resistor GR2, and the other end of the resistor GR2 is connected with the anode of the diode and one end of the resistor GR3 is connected with the grid of the SiC MOSFET.
2. The driving circuit with short-circuit protection function for high-voltage solid-state power controller according to claim 1, wherein the capacitors C16 and C24 are class i chip capacitors.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110141765.7A CN112886545B (en) | 2021-02-02 | 2021-02-02 | Driving circuit with short-circuit protection function suitable for high-voltage solid-state power controller |
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| CN202110141765.7A CN112886545B (en) | 2021-02-02 | 2021-02-02 | Driving circuit with short-circuit protection function suitable for high-voltage solid-state power controller |
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| CN112886545B true CN112886545B (en) | 2022-02-22 |
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| CN115441858B (en) * | 2022-08-21 | 2023-06-16 | 嘉晨云控新能源(上海)有限公司 | SiC MOSFET short-circuit protection method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166168A (en) * | 2011-12-19 | 2013-06-19 | 上海航空电器有限公司 | High-voltage direct current solid state power controller |
| CN103683244A (en) * | 2013-12-03 | 2014-03-26 | 天津航空机电有限公司 | Power loop driving circuit and current-limiting method of solid-state power controller |
| CN111030654A (en) * | 2019-11-29 | 2020-04-17 | 山东航天电子技术研究所 | Solid-state power controller |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8154346B2 (en) * | 2009-11-06 | 2012-04-10 | IML International Ltd | Short circuits and power limit protection circuits |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166168A (en) * | 2011-12-19 | 2013-06-19 | 上海航空电器有限公司 | High-voltage direct current solid state power controller |
| CN103683244A (en) * | 2013-12-03 | 2014-03-26 | 天津航空机电有限公司 | Power loop driving circuit and current-limiting method of solid-state power controller |
| CN111030654A (en) * | 2019-11-29 | 2020-04-17 | 山东航天电子技术研究所 | Solid-state power controller |
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