CN112885968A - Femtosecond laser etching process method of perovskite thin-film solar cell - Google Patents
Femtosecond laser etching process method of perovskite thin-film solar cell Download PDFInfo
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- CN112885968A CN112885968A CN202110076556.9A CN202110076556A CN112885968A CN 112885968 A CN112885968 A CN 112885968A CN 202110076556 A CN202110076556 A CN 202110076556A CN 112885968 A CN112885968 A CN 112885968A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000010329 laser etching Methods 0.000 title claims abstract description 34
- 230000008569 process Effects 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 239000011651 chromium Substances 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims description 10
- 239000000356 contaminant Substances 0.000 claims description 5
- 238000005238 degreasing Methods 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 238000011161 development Methods 0.000 description 3
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 150000002892 organic cations Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001411 inorganic cation Inorganic materials 0.000 description 1
- 238000002536 laser-induced breakdown spectroscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 208000001491 myopia Diseases 0.000 description 1
- 230000004379 myopia Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a femtosecond laser etching process method using a perovskite thin-film solar cell, a method for plating a nickel plating layer by using the laser etching process, which comprises the following steps: forming a nickel plating layer on the surface of the raw material; forming a laser-etched layer by laser-etching a pattern on the nickel-plated layer; and forming a chromium plating layer on the laser-etched layer. And secondly, the perovskite thin-film solar cell is processed by a femtosecond laser etching technology, and the method has the advantages that the etching process steps are simple, the etching processing graph and the path programming program can be adjusted, the full-automatic operation can be realized by inputting a control system, the high-energy, high-efficiency and high-precision of the femtosecond laser ensures that the etching precision is obviously improved, the damage to materials around an etching line is small, the environment is protected, and the method is easy to be widely applied to industrial production.
Description
Technical Field
The invention relates to a laser etching process, in particular to a femtosecond laser etching process for a perovskite thin-film solar cell.
Background
The source of the perovskite solar cell is called because of its light-absorbing layer (CH3 NH)3PbIx) has the structure of perovskite, not because of the calcium titanate (CaTiO) contained therein3) This is achieved byAnd (4) a substance. The organic-inorganic mixed metal halide perovskite structure semiconductor is prepared by the common ABX3In the form wherein the position of A is a monovalent organic cation, the position of B is a metal cation, and X is a halogenated anion. The cation may also be an inorganic cation, such as bentonite. But the most promising results are from the use of organic cations, such as Methylammonium (MA) and Formamidine (FA).
The most commonly used organic-inorganic perovskite material is CH3NH3PbI3-x-yBrxCly (MAPbl3X-ybrxclly), the several advantages possessed by the perovskite type solar cell make it well suited for use in photovoltaic technology, semiconductor light sources, and even laser lasers. The material can be prepared to form a highly-crystalline film precursor in a low-temperature solution method. The band gap can be adjusted by modifying the halide composition. The perovskite type solar cell shows excellent high photoluminescence lifetime and mobility. Furthermore, they benefit from high carrier mobility, coupled with long carrier lifetime, meaning that they can have an absorption depth that exceeds the carrier diffusion length.
The femtosecond laser is a laser operating in a pulse form, the duration is very short, only a few femtoseconds, one femtosecond is 10 minus 15 th power seconds, namely 1/1000 trillion seconds, and is several thousand times shorter than the shortest pulse obtained by an electronic method, which is the first characteristic of the femtosecond laser. The second characteristic of femtosecond laser is that it has very high instantaneous power, which can reach to million watt, and is hundreds times more than the total power generated worldwide. A third feature of femtosecond lasers is that they can be focused into a spatial region smaller than the diameter of the hair, with the electromagnetic field having a strength several times higher than the force of the atomic nuclei on their surrounding electrons. In the field of micromachining, because the influence on the periphery of a material is extremely small, the material can be safely cut, punched and carved, and even applied to the photoetching process of an integrated circuit. In the field of national defense, femtosecond laser is applied to safely cutting high explosive, and dismantling waste and old retired rockets, shells and the like. In the medical field, the femtosecond laser is like a precise scalpel and is used for treating myopia, beautifying and the like. In the field of biology, femtosecond laser bombards cell DNA to make it mutate, and is used for researching various influences of gene change. In the environmental field, the femtosecond laser LIBS technology measures the atmospheric pollution components and detects the environmental pollution level. In the scientific research field, femtosecond laser is ubiquitous. With the development of femtosecond laser technology, femtosecond laser can be applied in more fields. In view of the outstanding characteristics of femtosecond laser, the laser is widely applied to the fields of physics, biology, chemical control reaction, optical communication, fine processing and the like.
In recent years, the development of the solar cell industry in China is extremely fast, the solar power generation amount is increased by 30% every year, and the rapid development of the solar cell industry inevitably requires the upgrading of related production equipment and the improvement of the process.
Disclosure of Invention
The present invention is directed to solving the technical problems of filling the gap in the prior art, and first, the present invention provides a method of etching a pattern without making the nickel plating layer defective by a laser etching process on the nickel plating layer and forming a typical plating layer on the laser-etched nickel plating layer formed by the laser etching process, wherein the brightness of the pattern is controlled by the etching thickness of the nickel plating layer. Secondly, the invention provides a process method of the femtosecond laser etched perovskite solar cell, which is used for isolating hot spots of the thin film perovskite solar cell, does not need expensive equipment, is simple to operate, and can reduce a large amount of economic loss for enterprises.
The purpose of the invention is as follows: aiming at the existing problems and defects, the invention aims to provide a femtosecond laser etching process method of a thin film perovskite solar cell with no damage in etching and good processing quality, so as to meet the requirement of industrial production and improve the product performance.
The technical scheme is as follows: in order to achieve the purpose, the invention adopts the technical scheme that the femtosecond laser etching process of the thin-film solar cell comprises the following steps:
(1) first, a nickel plating layer is formed on a surface of a raw material, a laser etching layer is formed by femtosecond laser etching a pattern on the nickel plating layer, and a chromium plating layer is formed on the laser etching layer.
(2) In addition, forming the laser-etched layer may further include removing contaminants originating from the laser-etching process after forming the laser-etched layer and washing the surface by ultrasonic washing and electrolytic degreasing.
(3) Secondly, placing the thin film perovskite solar cell material on an operation platform through a mechanical arm, and defining processing parameters through a control system;
(4) focusing laser beams on the surface of the thin film perovskite solar cell material, raising the surface temperature of the solar cell material by femtosecond laser, and etching according to preset programming;
(5) and (5) after the etching is finished, replacing the new solar cell material and repeating the steps.
Wherein forming the laser-etched layer further comprises removing a plurality of contaminants originating from the laser-etching and washing the surface by ultrasonic washing and electrolytic degreasing after forming the laser-etched layer.
Wherein forming the nickel plated layer further comprises forming a copper plated layer on a surface of the raw material before forming the nickel plated layer.
And (3) laser with different wavelengths is used for engraving specific patterns on each layer of the solar cell material, so that internal cascade connection is realized.
The etching speed is 150-1200 mm/s.
The etching line width is 1-300 microns.
The repetition frequency is 20-100 KHz;
the line width consistency is less than or equal to 8 percent.
The laser beam coverage is 1000 x 1000 mm.
Further, the laser etching process is a method of processing (e.g., etching) the surface of the micro-melting material using a laser and its intaglio, and the process can implement complicated and detailed patterns by controlling the density of the laser spot. The laser may be a neodymium-YAG laser, an excimer laser, a carbon dioxide laser, or the like, and conditions such as a usable frequency range, a power range, and a laser spot may be controlled according to factors such as an etching thickness.
Has the advantages that: compared with the prior art, the invention has the advantages that the etching process steps are simple, the etching processing graph and the path programming program are adjustable, the full-automatic operation can be realized by inputting a control system, the high-energy, high-efficiency and high-precision femtosecond laser ensures that the etching precision is obviously improved, the damage to materials around an etching line is small, the environment is protected, and the wide application of industrial production is easy.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary and are not intended to limit the scope of the invention, as various equivalent modifications of the invention will occur to those skilled in the art upon reading the present disclosure and fall within the scope of the appended claims.
A femtosecond laser etching process for a thin film perovskite solar cell comprises the following steps:
(1) first, a nickel plating layer is formed on a surface of a raw material, a laser etching layer is formed by femtosecond laser etching a pattern on the nickel plating layer, and a chromium plating layer is formed on the laser etching layer.
(2) In addition, forming the laser-etched layer may further include removing contaminants originating from the laser-etching process after forming the laser-etched layer and washing the surface by ultrasonic washing and electrolytic degreasing.
(3) Secondly, placing the thin film perovskite solar cell material on an operation platform through a mechanical arm, and defining processing parameters through a control system;
(4) focusing laser beams on the surface of the thin film perovskite solar cell material, raising the surface temperature of the solar cell material by femtosecond laser, and etching according to preset programming; specific patterns are engraved on each layer of the thin film perovskite solar cell material by lasers with different wavelengths, internal cascade is realized, the etching speed is 150-300 microns, the repetition frequency is 20-100 KHz, the line width consistency is less than or equal to 8%, and the laser beam coverage range is 1000 multiplied by 1000 mm.
(5) And (5) after the etching is finished, replacing the new solar cell material and repeating the steps.
The present invention has been described in detail with reference to exemplary embodiments thereof. However, it would be appreciated by those skilled in the art that changes may be made and/or modified in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (10)
1. A femtosecond laser etching process for a thin-film solar cell is characterized by comprising the following steps: (1) first, forming a nickel plating layer on a surface of a raw material, forming a laser-etched layer by femtosecond laser-etching a pattern on the nickel plating layer, and forming a chromium plating layer on the laser-etched layer;
(2) in addition, forming the laser-etched layer may further include removing contaminants derived from the laser-etching process after forming the laser-etched layer and washing the surface by ultrasonic washing and electrolytic degreasing
(3) Secondly, placing the thin film perovskite solar cell material on an operation platform through a mechanical arm, and defining processing parameters through a control system;
(4) focusing laser beams on the surface of the thin film perovskite solar cell material, raising the surface temperature of the solar cell material by femtosecond laser, and etching according to preset programming;
(5) and (5) after the etching is finished, replacing the new solar cell material and repeating the steps.
2. The plating method according to claim 1, wherein forming the laser-etched layer further comprises removing a plurality of contaminants originating from the laser etching and washing a surface by ultrasonic washing and electrolytic degreasing after forming the laser-etched layer.
3. The plating method according to claim 1, wherein forming a nickel plating layer further comprises forming a copper plating layer on a surface of the raw material before forming the nickel plating layer.
4. The femtosecond laser etching process for the thin-film perovskite solar cell according to claim 1, characterized in that: and (3) laser with different wavelengths is used for engraving specific patterns on each layer of the solar cell material, so that internal cascade connection is realized.
5. The femtosecond laser etching process for the thin-film perovskite solar cell according to claim 1, characterized in that: the etching speed is 150-1200 mm/s.
6. The femtosecond laser etching process for the thin-film perovskite solar cell according to claim 1, characterized in that: the etching line width is 1-300 microns.
7. The femtosecond laser etching process for the thin-film perovskite solar cell according to claim 1, characterized in that: the repetition frequency is 20-100 KHz.
8. The femtosecond laser etching process for the thin-film perovskite solar cell according to claim 1, characterized in that: the line width consistency is less than or equal to 8 percent.
9. The femtosecond laser etching process for the thin-film perovskite solar cell according to claim 1, characterized in that: the laser beam coverage is 1000 x 1000 mm.
10. The laser etching process according to claim 1 is a method of processing (e.g., etching) a surface of a micro-melting material using a laser and its intaglio, and the process can implement a complicated and detailed pattern by controlling the density of a laser spot; 10. the laser may be a neodymium-YAG laser, an excimer laser, a carbon dioxide laser, or the like, and conditions such as a usable frequency range, a power range, and a laser spot may be controlled according to factors such as an etching thickness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110076556.9A CN112885968A (en) | 2021-01-20 | 2021-01-20 | Femtosecond laser etching process method of perovskite thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110076556.9A CN112885968A (en) | 2021-01-20 | 2021-01-20 | Femtosecond laser etching process method of perovskite thin-film solar cell |
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| CN202110076556.9A Pending CN112885968A (en) | 2021-01-20 | 2021-01-20 | Femtosecond laser etching process method of perovskite thin-film solar cell |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468442A (en) * | 2010-11-12 | 2012-05-23 | 索尼公司 | Light electron conversion element |
| CN102615433A (en) * | 2012-04-09 | 2012-08-01 | 镇江大成新能源有限公司 | Femtosecond laser etching process of thin-film solar cell |
| CN103451653A (en) * | 2012-05-31 | 2013-12-18 | 现代自动车株式会社 | Plating method using laser etching process |
| JP2014060392A (en) * | 2012-08-22 | 2014-04-03 | Mitsubishi Chemicals Corp | Process of manufacturing organic thin film solar cell element |
| CN109273607A (en) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | A method of flexible large area perovskite solar cell module is prepared using femtosecond laser |
-
2021
- 2021-01-20 CN CN202110076556.9A patent/CN112885968A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468442A (en) * | 2010-11-12 | 2012-05-23 | 索尼公司 | Light electron conversion element |
| CN102615433A (en) * | 2012-04-09 | 2012-08-01 | 镇江大成新能源有限公司 | Femtosecond laser etching process of thin-film solar cell |
| CN103451653A (en) * | 2012-05-31 | 2013-12-18 | 现代自动车株式会社 | Plating method using laser etching process |
| JP2014060392A (en) * | 2012-08-22 | 2014-04-03 | Mitsubishi Chemicals Corp | Process of manufacturing organic thin film solar cell element |
| CN109273607A (en) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | A method of flexible large area perovskite solar cell module is prepared using femtosecond laser |
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