CN102615433A - Femtosecond laser etching process of thin-film solar cell - Google Patents
Femtosecond laser etching process of thin-film solar cell Download PDFInfo
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- CN102615433A CN102615433A CN2012101007808A CN201210100780A CN102615433A CN 102615433 A CN102615433 A CN 102615433A CN 2012101007808 A CN2012101007808 A CN 2012101007808A CN 201210100780 A CN201210100780 A CN 201210100780A CN 102615433 A CN102615433 A CN 102615433A
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- solar cell
- femtosecond laser
- etching
- cell material
- thin
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a femtosecond laser etching process of a thin-film solar cell, comprising the following steps of: (1) placing a solar cell material on an operating platform through mechanical arms, and defining machining parameters through a control system; (2) focusing a laser beam on the surface of the solar cell material, raising the temperature of the surface of the solar cell material through femtosecond laser, and carrying out an etching operation according to a preset program; and (3) after the etching is ended, replacing a new solar cell material and repeating the steps. The femtosecond laser etching process has the advantages of simple steps, adjustable etched and machined graph and routing program, full-automatic operation realized through inputting the control system, remarkable improvement on the etching precision due to high energy, high efficiency and high precision of the femtosecond laser, low damage to materials surrounding an etching line, environment friendliness, easiness for industrial production and wide application range.
Description
Technical field
The present invention relates to a kind of laser ablation technology, particularly a kind of thin-film solar cells femtosecond laser etching technics.
Background technology
Femtosecond laser is a kind of laser with the impulse form running, and the duration is very short, has only several femtoseconds; One femtosecond is exactly negative 15 power seconds of 10, just 1/1,000,000,000,000,000 seconds, its Billy with electronics method obtained short pulse to lack several thousand times; Femtosecond laser have a very high instantaneous power; Can reach hundred TW terawatts, it can focus on the area of space also littler than the diameter of hair, makes the active force taller several times of the strength ratio atomic nucleus of electromagnetic field to electronics around it.In view of the outstanding feature of femtosecond laser, it has obtained extensive use in fields such as physics, biology, chemical controlled reaction, optical communication, retrofit.
In recent years, the development of the solar cell industry of China is exceedingly fast, and the solar electrical energy generation amount is with the speed increase in every year 30%, the improvement that develops inevitable requirement associated production apparatus upgrading and technology rapidly of solar energy industry.
Summary of the invention
Goal of the invention: to the problems referred to above, the purpose of this invention is to provide a kind of thin-film solar cells femtosecond laser etching technics,, enhance product performance to satisfy need of industrial production.
Technical scheme: a kind of thin-film solar cells femtosecond laser etching technics may further comprise the steps:
(1) through mechanical arm solar cell material is positioned on the operating platform, through control system definition machined parameters;
(2) the laser focusing light beam is on the solar cell material surface, and femtosecond laser improves the solar cell material surface temperature, carries out etching work according to preset programming;
(3) etching finishes, and the solar cell material that more renews repeats above-mentioned steps.
Different wavelength of laser is portrayed specific pattern on each layer of solar cell material, realize inner cascade.
Etching speed is not higher than 1000mm/s.
The etching live width is 1～400 micron.
Consistency of line width≤8%.
Laser beam coverage 1200 * 1200mm.
Beneficial effect: compared with prior art; Advantage of the present invention is that the etching technics step is simple, and etching graphics processing and path program can be adjusted, and input control system gets final product full-automatic operation; The high-precision etching precision of certainly having demonstrate,proved of the high-energy and high-efficiency of femtosecond laser significantly improves; Little to the damage of etched line material around, environmental protection is easy to the commercial production extensive use.
The specific embodiment
Below in conjunction with specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
A kind of thin-film solar cells femtosecond laser etching technics may further comprise the steps:
(1) through mechanical arm solar cell material is positioned on the operating platform, through control system definition machined parameters;
(2) the laser focusing light beam is on the solar cell material surface, and femtosecond laser improves the solar cell material surface temperature, carries out etching work according to preset programming; Different wavelength of laser is portrayed specific pattern on each layer of solar cell material, realize inner cascade, and etching speed is not higher than 1000mm/s, and the etching live width is 1～400 micron, consistency of line width≤8%, laser beam coverage 1200 * 1200mm.
(3) etching finishes, and the solar cell material that more renews repeats above-mentioned steps.
Claims (6)
1. thin-film solar cells femtosecond laser etching technics is characterized in that may further comprise the steps:
(1) through mechanical arm solar cell material is positioned on the operating platform, through control system definition machined parameters;
(2) the laser focusing light beam is on the solar cell material surface, and femtosecond laser improves the solar cell material surface temperature, carries out etching work according to preset programming;
(3) etching finishes, and the solar cell material that more renews repeats above-mentioned steps.
2. thin-film solar cells femtosecond laser etching technics according to claim 1 is characterized in that: different wavelength of laser is portrayed specific pattern on each layer of solar cell material, realize inner cascade.
3. thin-film solar cells femtosecond laser etching technics according to claim 1, it is characterized in that: etching speed is not higher than 1000mm/s.
4. thin-film solar cells femtosecond laser etching technics according to claim 1 is characterized in that: the etching live width is 1～400 micron.
5. thin-film solar cells femtosecond laser etching technics according to claim 1 is characterized in that: consistency of line width≤8%.
6. thin-film solar cells femtosecond laser etching technics according to claim 1 is characterized in that: laser beam coverage 1200 * 1200mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101007808A CN102615433A (en) | 2012-04-09 | 2012-04-09 | Femtosecond laser etching process of thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012101007808A CN102615433A (en) | 2012-04-09 | 2012-04-09 | Femtosecond laser etching process of thin-film solar cell |
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| CN102615433A true CN102615433A (en) | 2012-08-01 |
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| CN2012101007808A Pending CN102615433A (en) | 2012-04-09 | 2012-04-09 | Femtosecond laser etching process of thin-film solar cell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102838081A (en) * | 2012-08-24 | 2012-12-26 | 淮阴工学院 | Method utilizing femtosecond laser non-mask method to prepare magnetic sensitive microstructure unit |
| CN104625422A (en) * | 2014-12-29 | 2015-05-20 | 北京理工大学 | Method for assisting metal processing based on electronic dynamic control of ethanol solution |
| CN109273607A (en) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | A method of flexible large area perovskite solar cell module is prepared using femtosecond laser |
| CN109273608A (en) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | A kind of translucent perovskite solar battery and preparation method thereof |
| CN112885968A (en) * | 2021-01-20 | 2021-06-01 | 中国科学院新疆理化技术研究所 | Femtosecond laser etching process method of perovskite thin-film solar cell |
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| CN101689574A (en) * | 2007-03-22 | 2010-03-31 | 联合太阳能奥佛公司 | Method and apparatus for the laser scribing of ultra lightweight semiconductor devices |
| CN101687278A (en) * | 2007-05-31 | 2010-03-31 | 伊雷克托科学工业股份有限公司 | Multiple laser wavelength and pulse width process drilling |
| CN101958251A (en) * | 2009-07-20 | 2011-01-26 | 上海半导体照明工程技术研究中心 | Method for manufacturing patterned substrate on lithium aluminate wafer |
| CN102201493A (en) * | 2011-04-02 | 2011-09-28 | 周明 | High-speed precision crystal silicon laser etching apparatus and method |
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2012
- 2012-04-09 CN CN2012101007808A patent/CN102615433A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689574A (en) * | 2007-03-22 | 2010-03-31 | 联合太阳能奥佛公司 | Method and apparatus for the laser scribing of ultra lightweight semiconductor devices |
| CN101687278A (en) * | 2007-05-31 | 2010-03-31 | 伊雷克托科学工业股份有限公司 | Multiple laser wavelength and pulse width process drilling |
| CN101958251A (en) * | 2009-07-20 | 2011-01-26 | 上海半导体照明工程技术研究中心 | Method for manufacturing patterned substrate on lithium aluminate wafer |
| CN102201493A (en) * | 2011-04-02 | 2011-09-28 | 周明 | High-speed precision crystal silicon laser etching apparatus and method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102838081A (en) * | 2012-08-24 | 2012-12-26 | 淮阴工学院 | Method utilizing femtosecond laser non-mask method to prepare magnetic sensitive microstructure unit |
| CN102838081B (en) * | 2012-08-24 | 2015-02-11 | 淮阴工学院 | Method for preparing magnetic sensitive microstructure unit by femtosecond laser non-mask method |
| CN104625422A (en) * | 2014-12-29 | 2015-05-20 | 北京理工大学 | Method for assisting metal processing based on electronic dynamic control of ethanol solution |
| CN104625422B (en) * | 2014-12-29 | 2016-08-24 | 北京理工大学 | Based on dynamic control ethanol solution assistant metal processing method |
| CN109273607A (en) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | A method of flexible large area perovskite solar cell module is prepared using femtosecond laser |
| CN109273608A (en) * | 2018-11-05 | 2019-01-25 | 武汉理工大学 | A kind of translucent perovskite solar battery and preparation method thereof |
| CN112885968A (en) * | 2021-01-20 | 2021-06-01 | 中国科学院新疆理化技术研究所 | Femtosecond laser etching process method of perovskite thin-film solar cell |
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Application publication date: 20120801 |