CN112885913A - 适用于hit电池的钙钛矿量子点表面钝化层的制备方法 - Google Patents
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Abstract
本发明公开了一种适用于HIT电池的钙钛矿量子点表面钝化层的制备方法，本发明在现有晶硅异质结电池结构基础上，新引入一层表面场效应钝化材料钙钛矿量子点，可以与表面的ITO之间形成界面电场。在光照条件下，该界面电场可以进一步增强，同时与在被局域在钙钛矿量子点中部分光生电子共同作用下，在电池表面形成表面场效应钝化层。同时，钙钛矿量子点需要的低温退火工艺使其与HIT电池低温工艺相兼容。
Description
技术领域
本发明涉及一种适用于HIT电池的钙钛矿量子点表面钝化层的制备方法，属于太阳能电池技术领域。
背景技术
当今社会，能源和环境问题日益严重地影响着社会的快速发展。对清洁可再生能源的研究和应用已经引起了社会的广泛关注。太阳能电池作为一种可靠的可再生能源获取方式，得到了大力地推广与应用。太阳能电池的效率一直是令人关注的重点。随着近年来工艺的不断发展与改进，异质结晶硅太阳能电池效率有了一定提高，然而与理论极限效率相比仍有差距。界面钝化仍然是提高电池效率的一个重要手段。HIT电池的表面为裸露的ITO，缺少表面钝化材料。增加表面钝化层预计可以进一步提高器件效率。然而，常见的表面钝化材料为热生长的SiOx，Al2O3，SiNx等大多需要高温等复杂的制备条件和工艺，与低温制备的HIT电池工艺不兼容。因此，需要一种低温制备表面钝化材料满足HIT电池表面钝化的需求。
钙钛矿量子点具有特殊的光电物理性质，近年来引起了广泛的关注。钙钛矿铯铅溴量子点(CsPbBr3)，钙钛矿甲胺基溴化铅量子点(MAPbBr3)，钙钛矿氟代甲脒溴化铅(FAPbBr3)等量子点具有适合的能带结构，能隙宽度在2.3电子伏特左右，对太阳光谱中的短波光具有一定的光响应，并且在光照下具有可变的表面电势。但是目前还没有关于钙钛矿量子点与晶硅异质结电池如何结合使用的报道。
发明内容
为解决上述问题。本发明在现有晶硅异质结电池结构基础上，新引入一层表面场效应钝化材料钙钛矿量子点，可以与表面的ITO之间形成界面电场。在光照条件下，该界面电场可以进一步增强，同时与在被局域在钙钛矿量子点中部分光生电子共同作用下，在电池表面形成表面场效应钝化层。同时，钙钛矿量子点需要的低温退火工艺使其与HIT电池低温工艺相兼容。
本发明的第一个目的是提供一种适用于HIT电池的钙钛矿量子点表面钝化层的制备方法，包括如下步骤：
S1、将钙钛矿量子点分散液均匀分散在未封装的HIT(Heterojunction withIntrinsic Thin-layer)电池表面，在异质结太阳能电池表面沉积钙钛矿量子点；
S2、采用80～100℃低温热退火工艺退火10～60分钟，在HIT电池表面表面形成钝化层，得到采用钙钛矿量子点修饰的表面钝化HIT电池器件。
进一步地，所述的钙钛矿量子点的能隙宽度为2.2至3.1电子伏特。
进一步地，所述的钙钛矿量子点的尺寸为5纳米至20纳米。
进一步地，所述的钙钛矿量子点为铯铅溴钙钛矿量子点(CsPbBr3)、甲胺基溴化铅量子点(MAPbBr3)或氟代甲脒溴化铅(FAPbBr3)。
进一步地，所述的钙钛矿量子点分散液的浓度为1～10mg/mL。
进一步地，所述的钙钛矿量子点分散液采用喷涂的方式分散在未封装的异质结太阳能电池表面。
进一步地，所述的喷涂的速度为0.1～1.5mL/min。
进一步地，所述的钝化层的表面分布密度为1.4*1011/cm2至2.1*1012/cm2，对应的厚度大致为5纳米至30纳米。
进一步地，所述的低温热退火工艺的条件为85～95℃低温热退火工艺退火20～40分钟。
本发明的第二个目的是提供一种HIT电池器件，所述的HIT电池器件包括钙钛矿量子点钝化层。
本发明中，选定的量子点具有适合的能带结构，能隙宽度在2.3电子伏特至2.5电子伏特左右，对太阳光谱中的短波光具有一定的光响应，且在光照下具有可变的表面电势。可以与晶硅异质结电池表面的ITO形成界面电场。在光照条件下，该界面电场会进一步增强，同时在被局域在钙钛矿量子点中部分光生电子共同作用下，可以在电池表面形成表面场效应钝化层。同时，钙钛矿量子点低温热退火工艺使其与HIT电池低温工艺相兼容。
本发明的有益效果：
本发明提供了一种简单的基于钙钛矿量子点表面场效应钝化的异质结太阳能电池的制备方法。制备钙钛矿量子点表面钝化层的电池工艺兼容现有的晶硅异质结太阳能电池制备工艺，且制备钙钛矿量子点表面钝化层的异质结晶硅太阳能电池工艺简单，通过涂布法将特定厚度的钙钛矿量子点沉积在太阳能电池表面。钙钛矿量子点具有独特的光电性质，可以与晶硅异质结电池表面的ITO形成界面电场。无需高温退火，在光照条件下，界面电场进一步增强，同时在被局域在钙钛矿量子点中部分光生电子共同作用下，即可形成表面钝化场，提高器件的少子寿命，进而有效的提高异质结太阳能电池的综合效率。
附图说明
图1是本发明中制备的钙钛矿量子点表面钝化的晶硅异质结太阳能电池的器件结构图。
图2是本发明中制备的器件的实物图，在紫外光(波长为365纳米)照射下，器件表面发出绿色的荧光。图中数字代表不同数量的钙钛矿量子点分布。
图3是本发明中钙钛矿量子点表面钝化硅异质结电池(HIT电池)在不同波长下的外量子效率曲线。
图4是本发明中钙钛矿量子点表面钝化PEDOT：PSS/Si异质结电池在不同波长下的外量子效率曲线。
图5是本发明中器件表面在光照下和黑暗态下表面电势变化对比图。
具体实施方式
下面结合附图和具体实施例对本发明作进一步说明，以使本领域的技术人员可以更好地理解本发明并能予以实施，但所举实施例不作为对本发明的限定。
实施例1：
适用于HIT电池的钙钛矿量子点表面钝化层的制备方法，包括如下步骤：
S1、提供未封装的异质结太阳能电池(Heterojunction with Intrinsic Thin-layer,HIT)，和分散在正己烷溶剂中，浓度为2mg/mL的铯铅溴钙钛矿量子点。铯铅溴钙钛矿量子点可以与电池表面ITO之间形成相互作用。
S2、将铯铅溴钙钛矿量子点分散液均匀的分散在异质结太阳能电池表面，沉积15nm左右厚度的铯铅溴钙钛矿量子点。使其既满足提高足够表面钝化层的要求，又不影响电池表面的电接触。
S3、使用90℃低温热退火工艺退火30分钟，去除多余的溶剂，使铯铅溴钙钛矿量子点可以稳定附着，同时有利于铯铅溴钙钛矿量子点与ITO形成界面电场。即得到采用铯铅溴钙钛矿量子点修饰的表面钝化电池器件。
采用铯铅溴钙钛矿量子点修饰的表面钝化电池器件的结构图如图1所示。实物图如图2所示。
实施例2：
1、不同表面量子点分布密度下的器件IV特性测试
在表1中列出的IV数据均通过Sinton FCT-450系统测试得到，在苏州阿斯特阳光电力科技有限公司的实验室中完成的测试。
对比不同量量子点表面钝化的异质结电池IV性能可以看出，经过钙钛矿量子点表面钝化后，电池性能可以得到一定的提升，钙钛矿量子点的最佳浓度分布在喷涂速度为0.2ml/min左右，此条件下的对应量子点厚度约为15纳米。
表1不同表面分布密度量子点的表面钝化异质结电池IV性能参数
2、外量子效率测试
在图3中展示的器件外量子效率数据均通过大光斑量子效率系统测试得到，在苏州阿斯特阳光电力科技有限公司的实验室中完成。结果显示：在短波阶段随着量子点分布密度增加。量子效率逐渐降低；在长波段随着量子点分布密度增加量子效率增加。总的光电流比参考器件有所提高。
3、器件表面电势表征
在图5中器件表面电势变化使用扫描开尔文探针显微镜测试，在光照条件下和黑暗态下分别扫描样品表面的电势分布。结果显示：光照下的表面电势明显提高，意味着关照下更有利于光生电荷的提取，进而影响电池性能。
实施例3：
1、器件IV特性参数
在表2中所展示的器件是通过Newport太阳光模拟器和Keithley 2612源表测试得到的。对比可以看出，经过量子点修饰后，太阳能电池的性能得到了提高。
表2有无量子点表面钝化的PEDOT：PSS/Si异质结电池IV特性参数对比
2、外量子效率测试
在图4中展示的器件外量子效率数据均通过商业的电池量子效率系统测试得到，在光焱科技公司的太阳电池量子效率仪器上完成的测试。结果显示：在短波段响应略微降低；在长波段量子点效率明显提高，意味着光电流增加。
以上所述实施例仅是为充分说明本发明而所举的较佳的实施例，本发明的保护范围不限于此。本技术领域的技术人员在本发明基础上所作的等同替代或变换，均在本发明的保护范围之内。本发明的保护范围以权利要求书为准。
Claims (10)
1.一种适用于HIT电池的钙钛矿量子点表面钝化层的制备方法，其特征在于，包括如下步骤：
S1、将钙钛矿量子点分散液均匀分散在未封装的HIT(Heterojunction withIntrinsic Thin-layer)电池表面，在异质结太阳能电池表面沉积钙钛矿量子点；
S2、采用80～100℃低温热退火工艺退火10～60分钟，在HIT电池表面表面形成钝化层，得到采用钙钛矿量子点修饰的表面钝化HIT电池器件。
2.根据权利要求1所述的方法，其特征在于，所述的钙钛矿量子点的能隙宽度为2.2电子伏特至3.1电子伏特，优选的为2.3电子伏特至2.5电子伏特。
3.根据权利要求2所述的方法，其特征在于，所述的钙钛矿量子点的尺寸为5纳米至20纳米，优选地为10纳米至15纳米。
4.根据权利要求3所述的方法，其特征在于，所述的钙钛矿量子点为铯铅溴钙钛矿量子点、甲胺基溴化铅量子点或氟代甲脒溴化铅。
5.根据权利要求1所述的方法，其特征在于，所述的钙钛矿量子点分散液的浓度为1～10mg/mL。
6.根据权利要求1所述的方法，其特征在于，所述的钙钛矿量子点分散液采用喷涂的方式分散在未封装的异质结太阳能电池表面。
7.根据权利要求6所述的方法，其特征在于，所述的喷涂的速度为0.1～1.5mL/min。
8.根据权利要求1所述的方法，其特征在于，所述的钝化层的表面分布密度为1.4*1011/cm2至2.1*1012/cm2，对应的厚度大致为5纳米至30纳米。
9.根据权利要求1所述的方法，其特征在于，所述的低温热退火工艺的条件为85～95℃低温热退火工艺退火20～40分钟。
10.一种HIT电池器件，其特征在于，所述的HIT电池器件包括钙钛矿量子点钝化层。
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