CN112866444A

CN112866444A - Imaging module and manufacturing method thereof

Info

Publication number: CN112866444A
Application number: CN201911184357.9A
Authority: CN
Inventors: 黄河; 桂珞; 向阳辉
Original assignee: China Core Integrated Circuit Ningbo Co Ltd
Current assignee: China Core Integrated Circuit Ningbo Co Ltd
Priority date: 2019-11-27
Filing date: 2019-11-27
Publication date: 2021-05-28
Anticipated expiration: 2039-11-27
Also published as: CN112866444B

Abstract

The invention discloses an imaging module and a manufacturing method thereof, wherein the imaging module comprises: a moved element; at least one support block, which encloses a space and is suspended above the space by the moving element; the piezoelectric elements comprise movable ends and fixed ends, the fixed ends are fixed on the supporting blocks, and the movable ends are at least partially positioned in the limiting grooves; at least two piezoelectric elements are distributed on the periphery of the moved element; one end of the connecting arm is connected with the moved element, and the other end of the connecting arm is connected with the limiting groove; a lateral movement limit stop, comprising: the first side wall and the second side wall are positioned on two sides of the connecting arm and distributed along a radial direction parallel to the moved element; and the external signal connecting end is electrically connected with an electrode in the piezoelectric element, and the movable end drives the moved element to move upwards or downwards through the connecting arm when the piezoelectric element is in a power-on state.

Description

Imaging module and manufacturing method thereof

Technical Field

The invention relates to the technical field of motion control, in particular to an imaging module and a manufacturing method thereof.

Background

In some electronic terminals, it is often necessary to translate, vertically move or tilt some of the components to achieve some specific functions. For example, in various electronic terminals such as video cameras, still cameras, and mobile phones having a lens module, a movable lens or an image sensor is usually moved in an optical axis direction to focus or zoom or moved in a direction perpendicular to the optical axis direction to prevent optical shake by a driving mechanism such as a VCM Motor. However, unlike the conventional single lens reflex camera, it is a great engineering challenge to implement the function in electronic terminals such as mobile phones, micro video cameras, and cameras with a small spatial volume. Therefore, a structure for controlling the movement is desired to move the moved member in an ideal state.

Disclosure of Invention

The invention aims to provide an imaging module and a manufacturing method thereof, which can solve the problems of large volume of the imaging module and lateral movement of a moved element.

In order to achieve the above object, the present invention provides an imaging module, comprising:

a moved element including a lens group, an imaging sensing element, an aperture or a lens sheet;

at least one support block enclosing a space over which the moved element is suspended;

the at least two piezoelectric elements comprise movable ends and fixed ends, the fixed ends are fixed on the supporting block, and the movable ends are at least partially positioned in the limiting grooves; the at least two piezoelectric elements are distributed on the periphery of the moved element;

one end of the connecting arm is connected with the moved element, and the other end of the connecting arm is connected with the limiting groove;

a lateral movement limit stop, comprising: the first side wall and the second side wall are positioned on two sides of the connecting arm and distributed along the radial direction of the moved element;

and the external signal connecting end is electrically connected with an electrode in the piezoelectric element, and the movable end drives the moved element to move upwards or downwards through the connecting arm when the piezoelectric element is in a power-on state.

The invention also provides a method for manufacturing the imaging module, wherein the imaging module comprises a moved element, and the moved element comprises: a lens assembly, an imaging sensor element, an aperture or a lens sheet, the method comprising:

providing a substrate;

forming at least one intermediate structure on the substrate, wherein the at least one intermediate structure encloses a space, and the moved element is positioned above the space; the intermediate structure includes: the supporting block is positioned on the substrate, the piezoelectric element comprises a movable end and a fixed end, the fixed end is fixed on the supporting block, at least part of the movable end extends into the limiting groove, and the limiting groove and the piezoelectric element are embedded in the sacrificial layer;

forming a connecting arm connected with the limiting groove on the surface of the limiting groove;

a side wall is formed on the supporting block, an upper cover is positioned on the side wall, the upper cover is provided with an opening, and the connecting arm extends out of the opening;

and bonding the moved element on the connecting arm.

The piezoelectric element fixing device has the advantages that the fixed end of the piezoelectric element is fixed by the supporting block, the movable end of the piezoelectric element is provided with a part extending into the limiting groove, the connecting arm is connected with the limiting groove and the moved element, the movable end of the piezoelectric element is enabled to warp upwards or downwards by supplying power to the piezoelectric element, the movable end drives the connecting arm through the limiting groove, and the connecting arm drives the moved element to move up and down. Lateral movement limiting parts are arranged on two sides of the connecting arm, so that the lateral movement of the connecting arm can be restricted, and optical anti-shake can be realized.

Furthermore, the upper cover and the lower cover are arranged above and below the supporting block, so that the piezoelectric element is arranged in a relatively sealed space, and the piezoelectric element can be protected from being polluted by the external environment. Compared with the traditional driving mechanisms such as a VCM motor and the like, the combination of the piezoelectric element and the supporting block is light in weight, small in size, simple in structure and low in cost, can realize multi-dimensional movement, is suitable for the imaging module with narrow space volume, and the piezoelectric element is driven by pure voltage without electromagnetic interference.

Drawings

Fig. 1 is a schematic view of an imaging module according to an embodiment of the invention.

Fig. 2A is a top view of fig. 1.

FIG. 2B is a top view of the support block in a loop configuration according to one embodiment of the present invention.

Fig. 3 is a schematic structural diagram of a piezoelectric element with a hinge structure according to an embodiment of the invention.

Fig. 4 is a schematic cross-sectional view of a structure in which the first side wall and the second side wall of the lateral limiting member limit the movement of the connecting arm according to an embodiment of the invention.

Fig. 5 is a schematic structural diagram of a piezoelectric element according to an embodiment of the invention.

Fig. 6 is a schematic structural diagram of an imaging module in the prior art.

Fig. 7 is a top view of fig. 6.

Fig. 8 is a schematic view of the structure of fig. 6 in which the moved member is moved upward in an ideal state.

Fig. 9 is a schematic view of the structure of fig. 6 in which the moved member moves laterally.

FIG. 10 is a schematic diagram of a support block with two piezoelectric elements according to an embodiment of the present invention.

Fig. 11 is a schematic structural view illustrating the end of the piezoelectric element extending into the limiting groove according to an embodiment of the invention.

Fig. 12 is a schematic structural diagram of a multi-layer piezoelectric device according to an embodiment of the invention.

Fig. 13-17 are schematic structural views of imaging modules according to various embodiments of the present invention.

Fig. 18-22 are schematic views of electrical connections of an imaging module according to various embodiments of the present invention.

Fig. 23 is a flowchart illustrating a method of manufacturing an imaging module according to an embodiment of the invention.

Fig. 24-33 are schematic structural diagrams corresponding to different stages of a method for manufacturing an imaging module according to an embodiment of the invention.

FIGS. 34-36 are schematic structural views of an imaging module according to another embodiment of the present invention at different stages of a manufacturing method thereof

Description of reference numerals:

10-a support block; 20-a piezoelectric element; 201-a rotating shaft; 30-a limiting groove; 1000-lateral movement limiter, 1001-first sidewall; 1002-a second sidewall; 101-a second opening; 102-a second upper cover; 103-a support member; 104A-a first wall; 104B-a second wall; 105 a first upper cover; 106 — a first opening; 107-transverse cover plate; 108-barrier walls; 50-a linker arm; 50A-upper half of the linker arm; 50B-lower half of the connecting arm; 60-a moved element; 70-a support element; 251-a first electrode lead-out; 252-a second electrode lead-out; 61-a third electrical connection; 62-a fourth electrical connection; 63-a conductive plug; 64-pads; 71-a first electrical connection; 72-a second electrical connection; 73-lead; 74-conductive interconnect structures; 75-a flexible electrical connection; 76-a conductive layer; 80-lower sealing cover; 100-a circuit board; 211-odd layer electrodes 211; 221-even layer electrodes; 26-a conductive structure; 200-a substrate; 101A-a first dielectric layer of a first interlayer; 101B-a first dielectric layer of a second interlayer; 101C-a third dielectric layer; 101D-an eighth dielectric layer; 101D-1 lower layer eighth medium layer; 101D-2 upper eighth dielectric layer; 303A-a second dielectric layer of the first interlayer; 303B-a second dielectric layer of a second interlayer; 303C — a fourth dielectric layer; 303D-a fifth dielectric layer; 303E-a sixth dielectric layer; 303F-a seventh dielectric layer; 41-opening; 42-upper cover; 43-side wall.

Detailed Description

The imaging module and the manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and drawings, it being understood, however, that the concepts of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. The drawings are in simplified form and are not to scale, but are provided for convenience and clarity in describing embodiments of the invention.

It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

If the method herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps may be performed, and some steps may be omitted and/or some other steps not described herein may be added to the method. Although elements in one drawing may be readily identified as such in other drawings, the present disclosure does not identify each element as being identical to each other in every drawing for clarity of description.

Example 1

Fig. 1 is a schematic structural diagram of an imaging module according to an embodiment of the present invention, and fig. 2A is a top view of fig. 1, referring to fig. 1 and fig. 2A, the imaging module includes:

a moved element 60, the moved element 60 including a lens group, an imaging sensor element, an aperture or a lens sheet;

at least one support block 10 enclosing a space above which the moved element 60 is suspended;

at least two piezoelectric elements 20, including a movable end and a fixed end, wherein the fixed end is fixed on the supporting block 10, and the movable end is at least partially located in the limiting groove 30; the at least two piezoelectric elements 20 are distributed on the periphery of the moved element 60;

a connecting arm 50 having one end connected to the moved member 60 and the other end connected to the stopper groove 30;

a lateral movement limit stop, comprising: a first side wall 1001 and a second side wall 1002 positioned on both sides of the connecting arm 50, wherein the first side wall 1001 and the second side wall 1002 are distributed along the radial direction of the moved element 60;

and an external signal connection end electrically connected to the electrode in the piezoelectric element 20, wherein when the piezoelectric element 20 is in a power-on state, the movable end drives the moved element 60 to move up or down through the connection arm 50.

Specifically, the at least one supporting block 10 (2 are illustrated in the embodiment) encloses a space (see fig. 2A, which is indicated by a dotted line and is enclosed by two supporting blocks 10), and the moved element 60 is suspended above the space. The space enclosed by at least one supporting block 10 includes two conditions: referring to fig. 2B, in one case, the supporting block 10 is one, and in this case, the supporting block 10 is annular and includes an inner annular space and an outer annular space, where the inner annular space is the space (shown by a dotted line), and in another case, the supporting blocks 10 are plural and symmetrically or asymmetrically distributed around the periphery of the moved element 60, and the space surrounded by the supporting blocks 10 is the space. It should be noted that the space above is not limited to be located within the boundary of the space enclosed by the supporting block 10, that is, the boundary of the moved element 60 may be larger than the boundary of the space enclosed by the supporting block 10 or smaller than the boundary of the space enclosed by the supporting block 10.

At least two piezoelectric elements 20 distributed around the moved element 60, wherein the piezoelectric elements 20 include a movable end and a fixed end, the fixed end is fixed to the supporting block 10, and the movable end is at least partially located in the limiting groove 30. Referring to fig. 3, two sides of the movable end are provided with a rotating shaft 201, the rotating shaft 201 extends into the limiting groove 30, and the rotating shaft 201 can solve the problem that the movable end of the piezoelectric element is blocked by the limiting groove 30 in the moving process. The principle of which will be described in detail below. Alternatively, the shaft 201 is not provided on both sides of the movable end of the piezoelectric element 20, and the end of the movable end is located in the position-limiting groove 30.

With continued reference to fig. 1, the connecting arm 50 has one end connected to the moved member 60 and the other end connected to the retaining groove 30. In this example, a supporting member 70 is further bonded to the lower surface of the moved member 60, the supporting member 70 extends outward in the circumferential direction of the moved member 60, and the connecting arm 50 is connected to the lower surface of the supporting member 70. The supporting member 70 serves to support the moved member 60. In the present embodiment, the supporting element 70 is a film structure made of a material such as single crystal silicon, silicon nitride, silicon oxide or silicon carbide. In other examples, the supporting member 70 may not be provided, and the connecting arm 50 is directly bonded to the lower surface of the moved member 60.

The lateral movement limiting member, referring to fig. 1 and 4, includes: a first side wall 1001 and a second side wall 1002 located on both sides of the connecting arm, the first side wall 1001 and the second side wall 1002 being distributed in a radial direction parallel to the moved element. Fig. 4 is a schematic cross-sectional view of the structure in which the first side wall 1001 and the second side wall 1002 of the lateral movement limiting member limit the lateral movement of the connecting arm 50, and can also be regarded as a partially enlarged view of the dotted line portion in fig. 1. The arrow direction is a direction in which the connecting arm 50 moves laterally, and the distance from the connecting arm 50 to the first and

second side walls

1001 and 1002 is small, and when the connecting arm 50 moves in the arrow direction, the connecting arm is blocked by the first and

second side walls

1001 and 1002, so that the connecting arm 50 is restricted from moving laterally. In this embodiment, the lateral movement limiting member includes a supporting member 103 located on the supporting block 10, and a second upper cover 102 located above the supporting member 103, the second upper cover 102 is provided with a second opening 101, the connecting arm 50 passes through the second opening 101, and two side walls of the connecting arm 50, which are limited by the second opening 101, move laterally are respectively a first side wall 1001 and a second side wall 1002. External signal connections (not shown) are described in detail below. Electrically connected to the electrodes of the piezoelectric element 20, and when the piezoelectric element is in the power-on state, the movable end drives the moved element 60 to move up or down through the connecting arm 50.

The following describes the principle of the movable end moving upward or downward when the piezoelectric element is in the energized state. Referring to fig. 5, in the present embodiment, the specific structure of the piezoelectric element 20 includes a support layer 24 and a piezoelectric stack structure located on the support layer 24, where the piezoelectric stack structure includes a second electrode 22, a piezoelectric film 23 and a first electrode 21 stacked in sequence from bottom to top, an insulating layer 25 is further disposed above the first electrode 21, the first electrode 21 and the second electrode 22 are respectively connected to a first electrode leading-out terminal 251 and a second electrode leading-out terminal 252, and the first electrode leading-out terminal 251 and the second electrode leading-out terminal 252 are both located in the insulating layer 25.

When the first electrode leading end 251 and the second electrode leading end 252 are electrified, a pressure difference is generated between the upper surface and the lower surface of the piezoelectric film 23, so that the piezoelectric film 23 contracts, and the support layer 24 cannot stretch or contract, so that the piezoelectric element 20 warps upwards or downwards after being electrified (the warping direction and the warping degree are determined by voltages applied to the upper surface and the lower surface of the piezoelectric film 23), so that the piezoelectric element 20 is integrally bent upwards or downwards, the piezoelectric element can integrally ascend or integrally descend through the limiting groove and the connecting arm, the vertical position of the moved element is changed, and optical auto-focusing is realized.

The piezoelectric film 23 is made of a piezoelectric material that can be deformed when energized, such as quartz crystal, aluminum nitride, zinc oxide, lead zirconate titanate, barium titanate, lithium gallate, lithium germanate, or titanium germanate. The material of the support layer 24 is a dielectric material that is not electrically conductive, such as silicon oxide, silicon nitride, etc.

In this embodiment, the first electrode terminal 251 and the second electrode terminal 252 are located on the top surface of the piezoelectric element, in other embodiments, the first electrode terminal 251 and the second electrode terminal 252 may also be located on the bottom surface of the piezoelectric element 20, that is, in the support layer 24, or the first electrode terminal 251 and the second electrode terminal 252 may also be located on the top surface and the bottom surface of the piezoelectric element 20, respectively, and the invention is not limited thereto.

The process of the piezoelectric element moving the moved element through the limiting groove and the reason of the moved element moving transversely in one example are briefly described below with reference to the accompanying drawings. Fig. 6 is a simplified structural diagram of an imaging module, in which the piezoelectric element 20 is in a free state, fig. 7 is a top view of fig. 6, fig. 8 is an ideal structural diagram when the piezoelectric element 20 drives the moved element 60 to move upward, and fig. 9 is a schematic diagram of the moved element 60 moving laterally to the left. The retaining groove 30 is shown in the lower surface of the displaced component 60. The reason why the lateral movement is generated is: referring to fig. 9, when the degree of warpage of the left piezoelectric element 20 is greater than that of the right piezoelectric element 20, the moved element 60 is laterally moved leftward. With continued reference to fig. 1, in this embodiment, the limiting groove 30 is not directly bonded to the moved element 60, but is connected to the connecting arm 50, and the connecting arm 50 limits its lateral movement by the lateral movement limiting member, and thus limits the lateral movement of the moved element 60.

In this embodiment, the pair of supporting blocks 10 is symmetrically disposed on the outer circumference of the moved element 60. Each support block 10 is provided with a piezoelectric element 20, and the support block 10 comprises two sub-support blocks (not shown in the figure) arranged up and down, and the piezoelectric element 20 is fixed between the two sub-support blocks, which is more favorable for fixing the piezoelectric element 20. In other embodiments, the piezoelectric element 20 may be fixed to the upper surface of the supporting block 10. In another example, when the moved element 60 is heavy, a plurality of piezoelectric elements 20 may be provided on one supporting block 10. Referring to fig. 10, two piezoelectric elements are provided on each support block. In another embodiment, the support block is one and annular, and the piezoelectric element is symmetrically or asymmetrically arranged on the support block.

With continued reference to fig. 1, in this embodiment, the movable end of the piezoelectric element 20 extends out of the backing block 10 to form a cantilever structure. In other examples, the entirety of the piezoelectric element 20 may be located on the support block 10. When the piezoelectric element 20 is integrally located on the supporting block 10, the piezoelectric element is suitable for the occasion that the moved element 60 needs to be lifted upwards, and when the movable end of the piezoelectric element 20 extends out of the supporting block 10, the piezoelectric element can be applied to the occasion that the moved element 60 needs to be lifted upwards or downwards. The supporting block 10 is connected to the fixed end of the piezoelectric element 20 by an adhesive, or by a dry film.

Referring to fig. 7, two sides of the movable end of the piezoelectric element 20 are provided with a rotating shaft 201, the limiting groove 30 is provided with a first opening along the length direction of the rotating shaft, and the rotating shaft 201 extends into the first opening. The limiting groove 30 provides a moving space for the rotating shaft 201, and the rotating shaft 201 drives the limiting groove 30 to move upwards or downwards when the piezoelectric element 20 is in a power-on state. The limiting groove 30 provides a moving space for the rotating shaft 201, that is, the size of the limiting groove 30 is larger than the size of the movable end of the rotating shaft 201, that is, the length of the limiting groove 30 is larger than the length of the rotating shaft 201, and the height of the limiting groove 30 is larger than or equal to the diameter of the rotating shaft 201, so that the rotating shaft 201 can freely rotate and slide in the limiting groove 30, and when the piezoelectric element 20 warps, the rotating shaft 201 can rotate in the limiting groove 30, so as to prevent the movable end of the piezoelectric element 20 from being stuck. When the height of the limiting groove 30 is equal to the diameter of the rotating shaft 201, the lifting and lowering amount of the moved element 60 can be better controlled, and the problem that the space allowance between the rotating shaft 201 and the limiting groove 30 needs to be overcome does not exist.

Referring to fig. 11, in another example, the piezoelectric element 20 has no rotation shaft, and the stopper groove 30 is provided with a second opening in the direction of the movable end of the piezoelectric element 20, into which the end of the movable end of the piezoelectric element 20 protrudes.

With continued reference to fig. 1, a connecting arm 50 is provided between the moved member 60 and the restraint slot 30. In this embodiment, the moved element 60 and the limiting groove 30 are provided with an overlapping region in the vertical direction, the connecting arm 50 is located in the overlapping region and is a vertical wall, and when the limiting groove 30 is located on the outer side of the moved element 60 as a whole, the connecting arm 50 may be a bent wall. The support element 70 extending outward may be adhered to the bottom surface of the moved element 60, so that the support element 70 and the limiting groove 30 have an overlapping area in the vertical direction, and the connecting arm 50 is adhered to the lower surface of the support element 70, in which case the connecting arm 50 may also be a vertical wall. It should be noted that the connecting arm 50 is connected to the limiting grooves 30, each limiting groove 30 may correspond to one connecting arm 50, and the connecting arm is disposed in a distributed manner, or a plurality of limiting grooves 30 may correspond to one connecting arm 50, for example, when a plurality of limiting grooves 30 are circumferentially distributed along the moved element 60, and a plurality of limiting grooves 30 share one connecting arm 50, the connecting arm 50 may be in an annular shape. In this embodiment, the connecting arm 50 is adhered to the upper surface of the top wall of the limiting groove, in other embodiments, the connecting arm 50 may also be connected to other surfaces of the limiting groove 30, and the limiting groove 30 may drive the connecting arm 50 to move.

With continued reference to fig. 1, in this embodiment, both support blocks 10 are ring-shaped, and the lateral movement limiting member comprises a support member 103 and a second upper cover 102 with a second opening 101 above the support member 103, through which second opening 101 the connecting arm 50 passes. In this embodiment, the support member 103 is a closed ring shape for supporting the second upper cover 102 to provide a moving space for the upward movement of the piezoelectric element 20. The second opening 101 is shaped to match the connecting arm 50 and is sized slightly larger than the outer diameter of the connecting arm 50. The two side walls of the second opening 101 that restrict the lateral movement of the connecting arm 50 serve as a first side wall and a second side wall of the lateral movement restricting member, respectively. The support member 103 is located on the upper surface of the support block 10 and is also annular. The outer edge of the support member 103 may coincide with the outer edge of the support block 10 or the outer edge of the support member 103 may be located inwardly of the outer edge of the support block 10, the support member 103 encircling the connecting arm 50 therein. In other embodiments, the supporting member 103 is not limited to be located on the upper surface of the supporting block 10, and may be located on the inner side or the outer side of the supporting block 10. The inner side or the outer side here includes both the case where the support member 103 is in contact with the support block 10 or not.

With continued reference to fig. 1, in the present embodiment, the lower cover 80 is further included below the supporting block 10, and the lower cover 80, the supporting block 10, the supporting member 103, and the second upper cover 102 form a sealed space (except for the periphery of the connecting arm 50), which can prevent the external space from being contaminated by dust, organic matters, moisture, and the like. The lower cover 80 in this embodiment has a recess in the middle thereof, and the recess provides a space for the piezoelectric element 20 to move downward. In another example, when the piezoelectric element 20 does not need to be moved downward, the inner surface of the lower cover 80 may contact the bottom surface of the stopper groove 30, and the inner surface of the lower cover 80 may support the stopper groove 30. Of course, the lower cover 80 may not be included in other embodiments.

In the present embodiment, the distance that the moved element 60 can move up and down is L, the distance from the lower surface of the piezoelectric element 20 to the inner surface of the lower cover 80 is half of L, and the distance from the upper surface of the piezoelectric element 20 to the inner surface of the upper cover 102 is half of L, which minimizes the height between the upper cover 102 and the lower cover 80 when the movement displacement is satisfied.

The displacement of the moved element 60 is determined by the warping distance of the piezoelectric element 20, and when the piezoelectric element 20 warps upward and the stopper groove 30 contacts the inner surface of the upper cover 102, the upward moving distance is the maximum distance, and similarly, when the stopper groove 30 contacts the inner surface of the lower cover 80, the upward moving distance is the maximum distance that the piezoelectric element 20 moves downward. The piezoelectric element 20 moves downward, and when the pasting support stand 70 contacts with the upper surface of the upper cover 102, the moved element 20 cannot move downward, so the distance between the pasting support stand 70 and the upper surface of the upper cover 102 also restricts the downward movement, in this example, the distance between the upper surface of the upper cover 102 and the lower surface of the pasting support structure is also half of L.

In this embodiment the support block 10 is in the form of two separate rings forming two separate sealed spaces, and in another embodiment the support block is in the form of a single ring forming a single sealed space.

Example 2

Referring to fig. 13, a pair of support blocks 10 are symmetrically distributed on two sides of the moved element 60, the upper surface of each support block 10 is provided with one piezoelectric element 20, the two piezoelectric elements 20 are symmetrically arranged, two vertical first walls 104A and second walls 104B are arranged on two sides of the connecting arm 50 along the length direction of the piezoelectric elements 20, the two vertical first walls 104A and second walls B are respectively used as a first side wall and a second side wall of a transverse movement limiting member, the distance between the two vertical first walls 104A and second walls 104B is slightly larger than the outer diameter of the connecting arm 50, when the piezoelectric element 20 is warped, the movable end of the piezoelectric element 20 drives the connecting arm 50 through the limiting slot 30, the connecting arm 50 drives the moved element 60 to move upward or downward, the two vertical walls 104A and 104B block the lateral movement of the connecting arm 50 when the connecting arm 50 tends to move laterally. In the present embodiment, the lower ends of the two vertical first walls 104A and the second wall 104B are fixed on the circuit board, but in other embodiments, the two vertical first walls 104A and the second wall 104B are not limited to be connected to the circuit board, for example, when the supporting block 10 is disposed around the lower side of the connecting arm 50, the two vertical first walls 104A and the second wall 104B may also be located on the supporting block 10, or one of them may be located on the supporting block 10, and the other may be located on the circuit board.

In this embodiment, the connecting arm 50 is connected to the top surface of the limiting groove, and the connecting arm 50 is provided with a portion extending out of the width of the limiting groove 30 (the direction from the fixed end to the movable end of the piezoelectric element 20 is the length direction, and the length direction and the width direction of the limiting groove are the same as those of the piezoelectric element 20), the connecting arm 50 can have two ends both extending out of two sides of the width of the limiting groove 30, and also can have only one end extending out of the side surface of the limiting groove 30, and when only one end of the connecting arm 50 extends out of one side surface of the limiting groove 30, the two surfaces of the extending portion are respectively provided with the first wall 104A and the second wall. When the two ends of the connecting arm 50 extend out of the limiting groove 30, a first wall 104A and a second wall 104B may be disposed on two sides of the extending portion of each end, or two opposite first walls 104A and second walls 104B may be disposed on only one end, or a first wall 104A may be disposed on one side of one end, and a second wall 104B may be disposed on the other side of the other end.

Example 3

Referring to fig. 14, the supporting blocks 10 are a pair and symmetrically distributed on both sides of the moved element 60, the supporting block 10 includes two sub-supporting blocks in the up-down direction, and the piezoelectric element 20 is fixed between the two sub-supporting blocks. The lateral movement limiting member is a first upper cover 105 with a first opening 106 disposed on the upper surface of the supporting block 10, the connecting arm 50 is connected to the limiting groove 30 through the first opening 106 at one end, and at the other end, is connected to the lower surface of the moved element 60, the shape of the first opening 106 is matched with the connecting arm 50, the size is slightly larger than the outer diameter of the connecting arm 50, and the two inner side walls of the connecting arm 50, which limit the lateral movement of the connecting arm 50, are used as the first side wall and the second side wall of the lateral movement limiting member by the first opening 106. In this embodiment, a first upper cover 105 is provided on each support block 10, a first upper cover 105 is provided on each connecting arm 50, the first upper cover 105 is shown in dotted lines, referring to fig. 15, in another embodiment, the first upper cover 105 covers two support blocks 10 and the area in the middle of the support blocks 10, the first upper covers 105 are shown in dotted lines, and the number of the first openings 106 is the same as the number of the connecting arms. In addition, in the present embodiment, the connecting arm 50 need not be provided with a portion extending to both sides with respect to the stopper groove 30.

Example 4

Referring to fig. 16, the piezoelectric element 20 is located between two sub-supporting blocks distributed up and down, and the lateral movement limiting member includes a lateral cover plate 107 located on the upper surface of the supporting block 10 with an end surface opposite to the connecting arm 50, and a blocking wall 108 located on the other side of the connecting arm opposite to the end surface of the lateral cover plate 107. The end face of the transverse cover plate 107 opposite to the connecting arm 50 and the blocking wall 108 are respectively used as a first side wall and a second side wall of a transverse movement limiting part, and the connecting arm 50 and the blocking wall 108 and the end faces of the connecting arm 50 and the open end of the transverse cover plate 107 are respectively provided with a small distance so as to limit the transverse movement of the connecting arm. In this embodiment, at least one end of the connecting arm 50 extends out of the side of the limiting groove 30, and the blocking wall 108 is disposed at one side of the outward extending portion of the connecting arm 50 and opposite to the transverse cover plate 107, and the blocking wall 108 can be connected to the circuit board or the supporting block 10.

Example 5

Referring to fig. 17, in the present embodiment, the lateral movement limiting member is disposed on the outer circumference of the supporting block 10 to surround the supporting block 10. The supporting block 10 is a ring, the piezoelectric elements 20 are symmetrically arranged above the surface of the supporting block 10, and the lateral movement limiting part comprises: a supporting component 103, and a second upper cover 102 positioned on the supporting component 103, wherein the second upper cover 102 is provided with a second opening 101. The connecting arm 50 passes through the second opening 101, and has one end connected to the stopper groove 30 and the other end connected to the bottom surface of the moved member 60. Wherein the supporting member 103 is ring-shaped, surrounding the outer circumference of the supporting block 10, and the connecting arm 50 is integrally ring-shaped. The second upper cover 102 entirely covers the area surrounded by the support member 103. The support member 103 and the second upper cover 102 form a relatively sealed space (except for the second opening 101). In another example, the supporting member 103 may be located on the supporting block 10, the added supporting member 103 provides a space for the upward movement of the stopper groove 30, the shape of the supporting member 103 may be the same as that of the supporting block 10, or the supporting member 103 may be provided only on a part of the surface of the supporting block 10.

With continued reference to fig. 17, the first electrode terminal and the second electrode terminal of the piezoelectric element 20 are both located on the top surface of the piezoelectric element 20, and there is no other covering structure above the fixed end of the piezoelectric element 20, and the first electrode terminal and the second electrode terminal are directly used as external signal connection terminals, and are directly electrically connected to the circuit board through the lead wires 73.

Referring to fig. 18, the first electrode terminal and the second electrode terminal of the piezoelectric element 20 are both located on the bottom surface of the piezoelectric element 20. The external signal connection ends are a third electrical connection end 61 and a fourth electrical connection end 62, which are both located on the bottom surface of the supporting block 10 and directly below the piezoelectric element 20. The third electrical connection terminal 61 is electrically connected to the first electrode terminal of the piezoelectric element 20 through a conductive plug 63, the fourth electrical connection terminal 62 is electrically connected to the second electrode terminal of the piezoelectric element 20 through a conductive plug 63, and the two conductive plugs 63 are located in the backing block 10.

Referring to fig. 19, when the fixed end of the piezoelectric element 20 is located at the middle of the supporting block 10, the first electrode lead and the second electrode lead of the piezoelectric element 20 are located at the top surface and the bottom surface of the piezoelectric element 20, respectively. The external signal connection end, the third electrical connection end 61 and the fourth electrical connection end 62 are respectively located on the top surface and the bottom surface of the supporting block 10 and are located right above and right below the piezoelectric element 20, the third electrical connection end 61 is electrically connected with the first electrode leading-out end 251 of the piezoelectric element 20 through a conductive plug 63, the fourth electrical connection end 62 is electrically connected with the second electrode leading-out end 252A of the piezoelectric element 20 through a conductive plug 63, and the two conductive plugs 63 are located in the supporting block 10. In this embodiment, the upper surface of the supporting block 10 is provided with an area not covered by the first upper cover 105, and the third electrical connection end 61 is located above the supporting block 10 and not covered by the area of the first upper cover 105, in other embodiments, the third electrical connection end 61 may be located on the upper surface of the first upper cover 105, and the conductive plug 63 needs to pass through the supporting block 10 and the first upper cover 105 at the same time.

Referring to fig. 20, the first electrode terminal 251 and the second electrode terminal 252 of the piezoelectric element 20 are both located on the bottom surface of the piezoelectric element 20, the imaging module is provided with a lower cover 80, the third electrical connection terminal 61 and the fourth electrical connection terminal 62 are located on the bottom surface of the lower cover 80 and are located right below the piezoelectric element 20, the third electrical connection terminal 61 is electrically connected to the first electrode terminal 251 of the piezoelectric element 20 through a conductive plug 63, the fourth electrical connection terminal 62 is electrically connected to the second electrode terminal 252 of the piezoelectric element 20 through a conductive plug 63, and the two conductive plugs 63 penetrate through the supporting block 10 and the lower cover 80.

It is to be understood that when the third and fourth

electrical connection terminals

61 and 62 are not directly opposite to the piezoelectric element 20, the third and fourth

electrical connection terminals

61 and 62 may also be electrically connected to the first and second electrode terminals 251 and 252 using rewiring.

With continued reference to fig. 20, when the moved element 60 needs to be connected with an external electrical signal, such as the moved element 60 is an imaging sensing element, the top surface of the supporting block 10 is provided with a first electrical connection end 71, the edge of the imaging sensing element has a second electrical connection end 72, the first electrical connection end 71 is as close as possible to the imaging sensing element, the first electrical connection end 71 and the second electrical connection end 72 are electrically connected by a lead 73, and the first electrical connection end 71 can be electrically connected with the circuit board 100 by a lead (the lead is not shown), so that the circuit board 100 can supply power or provide a signal for the imaging sensing element. The first electrical connection terminal 71 may be located on the second upper cover 102 and then connected to the circuit board 100 by a lead, or directly connected to the circuit board 100 by a lead.

In one embodiment, referring to fig. 21, the second electrical connection terminal 72 is located on the upper surface of the moved component 60, the conductive layer 76 is disposed in the second cover plate 102, the second electrical connection terminal 72 is electrically connected to the conductive layer 76 through a lead 73, and the connection position of the lead 73 and the conductive layer 76 is as close as possible to the second electrical connection terminal 72, so as to shorten the length of the lead 73. The conductive layer 76 extends above the supporting member 103, a conductive plug 63 is disposed below the conductive layer 76, the conductive plug 63 penetrates through the supporting member 103, the supporting block 10 and the lower cover 80, and is electrically connected to a pad 64 on the bottom surface of the lower cover 80, and the pad 64 serves as an external signal connection terminal.

In another embodiment, referring to fig. 22, the second electrical connection terminal 72 is located on the lower surface of the moved element 60, a conductive interconnection structure 74 is disposed in the connection arm 50, the top end of the conductive interconnection structure 74 is connected to the second electrical connection terminal 72, the bottom end of the conductive interconnection structure extends to a side wall of a limiting groove (the side wall is disposed opposite to the movable end of the piezoelectric element), a flexible electrical connector 75 is connected to the side wall of the limiting groove, the flexible electrical connector 75 can be elastically deformed, the other end of the flexible electrical connector 75 is connected to a conductive layer 76 of the piezoelectric element 20, for example, an insulating layer can be disposed on the bottom surface of the piezoelectric element 20, a conductive layer 76 is disposed in the insulating layer, a conductive plug 63 penetrating through the supporting block 10 and the lower cover 80 is disposed on the bottom surface of the conductive layer 76, one end of.

With reference to the first two embodiments, when the second electrical connection terminal 72 is located on the upper surface of the moved element 60, a through hole is formed in the second cover plate 102, a conductive structure penetrating through the top wall is formed on the top wall of the limiting groove, the upper end of the conductive structure is electrically connected to the second electrical connection terminal 72 through a lead wire penetrating through the through hole, the lower end of the conductive structure is connected to a flexible electrical connection member, the flexible electrical connection member is electrically connected to the conductive layer 76 in the piezoelectric element, and other structures are the same as those in the previous embodiment. In another embodiment, the second electrical connection terminal 72 is located on the upper surface of the moved element 60, a through hole is provided on the upper cover 42, and a lead is connected to the second electrical connection terminal 72 and the conductive layer 76 located inside the piezoelectric element 20 through the through hole.

Through the above embodiments, the lateral movement limiting parts are arranged on the two sides of the connecting arm, so that the lateral movement of the connecting arm can be restricted, the lateral movement of the moved element can be limited, and the optical anti-shake function can be realized. Furthermore, the piezoelectric element is arranged in a relatively sealed space by arranging the upper cover and the lower cover on the upper part and the lower part of the supporting block, so that the piezoelectric element can be protected from being polluted by the external environment.

An embodiment of the present invention further provides a method for manufacturing an imaging module, and fig. 23 shows a flowchart of the method for manufacturing an imaging module. Fig. 24 to 33 are schematic structural diagrams of different stages corresponding to respective steps of a method for manufacturing an imaging module according to an embodiment of the invention, and the method for manufacturing an imaging module will be described in detail with reference to fig. 23 to 33.

The manufacturing method of the imaging module comprises the following steps:

s01: providing a substrate 200;

s02: forming at least one intermediate structure on the substrate 200, the at least one intermediate structure enclosing a space, the moved element being located above the space, the intermediate structure (shown in dashed box in fig. 25) comprising: the supporting block 10 on the substrate 200 includes a piezoelectric element 20 having a movable end and a fixed end, the fixed end is fixed on the supporting block 10, the movable end at least partially extends into the limiting groove 30, and the limiting groove 30 and the piezoelectric element 20 are embedded in the sacrificial layer. The space enclosed by the at least one intermediate structure means that the supporting blocks 10 enclose a space, the number of the supporting blocks 10 can be 1 or multiple, when the number of the supporting blocks is 1, the supporting blocks are annular and comprise an inner ring space and an outer ring space, the inner ring space is the space, the number of the supporting blocks 10 can also be multiple, the supporting blocks are symmetrically or asymmetrically distributed on the periphery of the moved element 60, and the space enclosed by the plurality of the supporting blocks is the space. It should be noted that the space above is not limited to be located right above the space enclosed by the supporting blocks, that is, the boundary of the moved element 60 may be larger than the boundary of the space enclosed by the supporting blocks 10 or smaller than the boundary of the space enclosed by the supporting blocks 10. The movable end at least partially extends into the limiting groove and comprises two conditions: in one case, referring to fig. 3, the rotating shafts 201 are disposed on two sides of the movable end, and the rotating shafts 201 extend into the limiting groove 30, so that the rotating shafts 201 can solve the problem that the movable end of the piezoelectric element is clamped by the limiting groove in the moving process. Alternatively, the movable end may have no shaft on both sides thereof, and the end of the movable end is located in the limiting groove 30.

S03: a connecting arm 50 connected with the limiting groove 30 is formed on the surface of the limiting groove 30;

s04: forming a side wall 43 on the support block, an upper cover 42 on the side wall, the upper cover having an opening 41, the connecting arm 50 extending from the opening 41;

s05: the element to be moved is arranged on the connecting arm.

Referring to fig. 24, step S01 is executed to provide a substrate 200, where the material of the substrate 200 may be at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors, and further includes a multilayer structure composed of these semiconductors, and may be a ceramic substrate such as alumina, or quartz. In this embodiment, the substrate 200 is single crystal silicon.

Referring to fig. 25A and 25B, fig. 25B is a sectional view of fig. 25A taken along a tangential line a-a. Step S02 is executed to form at least one intermediate structure (within the dashed box) on the substrate 200, where the at least one intermediate structure encloses a space and the moved element is located above the space. The intermediate structure comprises: the supporting block 10 on the substrate 200 includes a piezoelectric element 20 having a movable end and a fixed end, the fixed end is fixed on the supporting block 10, the movable end at least partially extends into the limiting groove 30, and the limiting groove 30 and the piezoelectric element 20 are embedded in the sacrificial layer.

In this embodiment, the forming of the intermediate structure specifically includes the steps of:

firstly, defining the area where the supporting block 10 is located as a first area, and defining the area where the limiting groove 30 is located as a second area;

s21, forming two intermediate layers on the substrate 200 from bottom to top, each intermediate layer comprising: the first dielectric layer is positioned in the first area, the second dielectric layer is positioned in the second area, and the first sacrificial layer is positioned between the first dielectric layer and the second dielectric layer; the second medium layer is used as the bottom wall of the limiting groove;

referring to fig. 26A and 26B, fig. 26B is a sectional view of fig. 26A taken along a direction of a tangent line a-a, and the forming of the first-layer intermediate layer on the substrate 200 includes: a dielectric thin film is formed on the substrate 200, and methods of forming the dielectric thin film include chemical deposition and physical deposition. And etching the dielectric film to form a first dielectric layer 101A of the first intermediate layer and a second dielectric layer 303A of the first intermediate layer. And then forming a sacrificial material, covering the first dielectric layer 101A of the first intermediate layer, the second dielectric layer 303A of the first intermediate layer and the area between the first dielectric layer 101A of the first intermediate layer and the second dielectric layer 303A of the first intermediate layer, and forming the sacrificial material by a chemical vapor deposition or physical vapor deposition method. And carrying out a planarization process on the sacrificial material, and removing the sacrificial material above the first dielectric layer 101A of the first intermediate layer and the second dielectric layer 303A of the first intermediate layer to enable the top surface of the sacrificial material between the first dielectric layer 101A of the first intermediate layer and the second dielectric layer 303A of the first intermediate layer to be flush with the top surfaces of the first dielectric layer 101A of the first intermediate layer and the second dielectric layer 303A of the first intermediate layer, wherein the first sacrificial layer comprises the sacrificial material between the first dielectric layer 101A of the first intermediate layer and the second dielectric layer 303A of the first intermediate layer. The dielectric film comprises the following materials: silicon dioxide, silicon nitride or silicon carbide. The sacrificial material comprises the following materials: phosphosilicate glass, borophosphosilicate glass, germanium, carbon, low temperature silica, polyimide, and the like, but are not limited to the above materials.

Forming the second layer interlayer includes: forming dielectric films on the first dielectric layer 101A of the first intermediate layer, the second dielectric layer 303A of the first intermediate layer and the first sacrificial layer, etching the dielectric films to form the first dielectric layer 101B of the second intermediate layer positioned above the surface of the first dielectric layer 101A of the first intermediate layer, and the second dielectric layer 303B of the second intermediate layer positioned above the second dielectric layer 303A of the first intermediate layer, wherein the shape of the second dielectric layer 303B of the second intermediate layer may be the same as or different from the shape of the second dielectric layer 303A of the first intermediate layer, in this example, the area occupied by the second dielectric layer 303B of the second intermediate layer is larger than the area of the second dielectric layer 303A of the first intermediate layer. And then forming a sacrificial material to cover the first dielectric layer 101B of the second interlayer, the second dielectric layer 303B of the second interlayer, and the region between the first dielectric layer 101B of the second interlayer and the second dielectric layer 303B of the second interlayer, wherein the first sacrificial layer further comprises the sacrificial material positioned between the first dielectric layer 101B of the second interlayer and the second dielectric layer 303B of the second interlayer. The materials and formation methods of the dielectric film and the sacrificial material are as described above.

S22 forming third dielectric layers on the first dielectric layers and second sacrificial layers between the third dielectric layers;

referring to fig. 27, a dielectric film is formed over the second layer intermediate structure, patterned to form a third dielectric layer 101C. In this embodiment, the region where the sidewall of the limiting groove is defined is the third region, and when the dielectric thin film is patterned, the fourth dielectric layer 303C is formed in the third region as the lower portion of the sidewall of the limiting groove. In another example, the lower portion of the spacing groove may not be formed in this step. And then forming a sacrificial material to cover the third dielectric layer 101C, the fourth dielectric layer 303C and the region between the third dielectric layer 101C and the fourth dielectric layer 303C, performing a planarization process on the sacrificial material, and removing the sacrificial material above the third dielectric layer 101C and the fourth dielectric layer 303C. Wherein the sacrificial material located between the third dielectric layers 101C is a second sacrificial layer.

And S23 bonding the fixed end of the piezoelectric element to the third medium layer, wherein the movable end of the piezoelectric element is positioned above the second medium layer.

For the structure and materials of the piezoelectric element, please refer to the foregoing embodiments, which are not described herein.

Referring to fig. 28, the fixed end of the piezoelectric element 20 is bonded to the third dielectric layer 101C, and the bonding method includes: the structural adhesive or the dry film adhesive is used for bonding, and the movable end of the piezoelectric element 20 is positioned on the second sacrificial layer above the second dielectric layer 303B of the second interlayer.

S24, forming a third sacrificial layer, the side wall of the limiting groove in the second sacrificial layer and the third sacrificial layer, and the top wall of the limiting groove above the third sacrificial layer;

the supporting block includes: a first dielectric layer 101A of the first interlayer, a first dielectric layer 101B of the second interlayer, and a third dielectric layer 101C.

Referring to fig. 28, after bonding the piezoelectric element 20, a sacrificial material is formed to cover the piezoelectric element 20, the third dielectric layer 101C, the fourth dielectric layer 303C, and the exposed region of the second sacrificial layer. Removing the sacrificial material above the fourth dielectric layer 303C, above the third dielectric layer 101C and above the fixed end of the piezoelectric element 20, forming a dielectric film above the exposed fourth dielectric layer 303C, above the third dielectric layer 101C, above the fixed end of the piezoelectric element 20 and above the region where the sacrificial material is not removed, etching the dielectric film, and retaining the dielectric films above the fourth dielectric layer 303C and above the third dielectric layer 101C, wherein the dielectric film above the fourth dielectric layer 303C is defined as a fifth dielectric layer 303D serving as an upper portion of the side wall of the spacing groove. The dielectric film on the third dielectric layer 101C is defined as the lower eighth dielectric layer 101D-1, and the unremoved sacrificial material on the second sacrificial layer is the third sacrificial layer.

Referring to fig. 29, a dielectric film (first dielectric material) is formed to cover the third sacrificial layer, the fifth dielectric layer 303D, and the underlying eighth dielectric layer 101D-1. And etching the dielectric film, reserving the dielectric film above the region opposite to the second dielectric layer 303B of the second-layer middle layer, defining the dielectric film as a sixth dielectric layer 303E as the top wall of the limiting groove, reserving the dielectric film above the lower-layer eighth dielectric layer, defining the dielectric film as an upper-layer eighth dielectric layer 101D-2, and forming an integral eighth dielectric layer by the upper-layer eighth dielectric layer 101D-2 and the lower-layer eighth dielectric layer 101D-1.

The supporting shoe includes: a first dielectric layer 101A of a first interlayer, a first dielectric layer 101B and a third dielectric layer 101C of a second interlayer, and an eighth dielectric layer 101D. In another embodiment, the eighth dielectric layer may not be formed, and the support block includes: a first dielectric layer 101A of the first interlayer, a first dielectric layer 101B of the second interlayer, and a third dielectric layer 101C.

The supporting block 10 is annular in this embodiment, and surrounds the piezoelectric element 20 and the stopper groove 30. A supporting block 10 is provided in an extending direction from the fixed end to the movable end of the piezoelectric element 20, and a certain gap is provided between the supporting block 10 and the limiting groove 30, and referring to fig. 29, a gap is provided between the supporting block and the limiting groove 30 in a dotted line portion to ensure that the limiting groove 30 can move up and down. In another embodiment, referring to fig. 14, the supporting block 10 has a rectangular shape, and the direction of the limiting groove 30 opposite to the fixed end of the piezoelectric element 20 has no supporting block. The lateral movement limiter is a first upper cover 105 with a first opening 106.

Referring to fig. 30 to 32, steps S03 and S04 are performed to form the connection arm 50 connected to the stopper groove 30 on the surface of the stopper groove 30. A side wall 43 and an upper cover 42 on the side wall 43 are formed on the support block 10, the upper cover 42 is provided with an opening 41, and the connecting arm 50 protrudes from the opening 41.

Specifically, in the present embodiment, the method of forming the connecting arm 50 connected to the limiting groove 30 on the surface of the limiting groove 30, and forming the side wall 43 and the upper cover 42 on the side wall 43 on the supporting block 10 includes: referring to fig. 30, the substrate 200 is etched according to a set thickness, which is a difference between the height of the substrate 200 and the height of the sidewall 43. The area where the linker arm 50 is preformed is left unetched to form the upper half 50A of the linker arm 50. Referring to fig. 31, the remaining portion of the substrate 200 continues to be etched, forming the lower portion 50B of the link arm 50 and the sidewall 43. In this embodiment, the bottom wall of the limiting groove is provided with a protruding portion (the second dielectric layer 303A of the first intermediate layer), and the connecting arm 50 is connected with the protruding portion of the bottom wall of the limiting groove. The sidewall 43 is connected to the supporting block 10, and the shape of the sidewall 43 may be the same as that of the supporting block 10, or may be located only in a partial region of the supporting block 10, and in this embodiment, the sidewall 43 is annular as that of the supporting block 10. Referring to fig. 32, after the connection arm 50 and the side wall 43 are formed, the upper cover 42 provided with the opening 41 is prepared, and the upper cover 42 is bonded to the side wall 43 so that the connection arm 50 passes through the opening 41. Methods of bonding the upper cover 42 include thermal compression bonding, structural adhesive bonding, or dry film bonding.

In other embodiments, the connection arm 50 connected to the retaining groove 30 is formed on the surface of the retaining groove 30. The following four methods of forming the side walls 43 on the support block 10 are:

1. the substrate 200 is etched, a portion connected to the stopper groove or the protrusion of the stopper groove is left, and the other portion is removed to form the connection arm 50. The side walls 43 are prepared in advance and the side walls 43 are bonded to the support block 10 by a bonding process.

2. The substrate 200 is etched, the substrate 200 on the supporting block 10 is remained, and other portions are removed to form the sidewalls 43 connected to the supporting block 10. The connecting arm 50 is prepared in advance, and the connecting arm 50 is bonded to the stopper groove 30.

3. The side wall 43 and the connecting arm 50 are prepared in advance and may be connected to the supporting block 10 and the stopper groove 30, respectively, by means of bonding.

4. A dielectric layer is formed on the other side of the support block 10 opposite the substrate 200 by etching the dielectric layer to form the sidewalls 43 and the connecting arms 50.

It should be noted that the shape of the side wall 43 may be the same as the support block 10 or may be different, for example, the boundary of the side wall 43 is located at the same position as the boundary of the support block 10 or the boundary of the side wall 43 is located inside the boundary of the support block 10.

In another embodiment, the upper cover 42 and the side wall 43 are formed as a single structure, and the side wall 43 and the upper cover 42 on the side wall 43 are formed on the support block 10 by preparing the single structure in advance and directly bonding the single structure to the support block 10. The forming method of the integrated structure can be as follows: preparing a substrate, forming a dielectric film on the substrate, etching the dielectric film to form a groove, reserving a certain thickness at the bottom of the groove for forming an upper cover 42, forming a side wall 43 by a wall body at the periphery of the groove, patterning the bottom of the groove to form an opening 41 matched with the periphery of the connecting arm, and removing the substrate to obtain the integrated structure.

In another embodiment, referring to fig. 14 and 15, the lateral movement limiter is a first upper cover 105 with a first opening 106 formed by: after the support block is formed, a first upper cover 105 with a first opening 106 and the connecting arm 50 are provided, the connecting arm 50 is adhered to the retaining groove 30, and the first upper cover 105 with the first opening 106 is adhered to the support block, the connecting arm passing through the first opening.

In another embodiment, referring to fig. 16, the lateral movement limiting member is a lateral cover plate 107 and a blocking wall 108, and the forming method is: after the support block is formed, a transverse cover plate 107 and a blocking wall 108 are provided, the transverse cover plate 107 is adhered to the support block, and the blocking wall 108 is fixed to the circuit board such that the blocking wall 108 and the transverse cover plate 107 are provided with opposing portions therebetween with the connecting arms therebetween.

Referring to fig. 13, the lateral movement limiting members are a first wall 104A and a second wall 104B, and the forming method includes: a first wall 104A and a second wall 104B are prepared, and the first wall 104A and the second wall 104B are provided on both sides of the connecting arm 50, respectively, and fixed to the circuit board.

Referring to fig. 33, in the present embodiment, after the upper cover 42 is bonded, a lower cover 80 is bonded to the other side of the supporting block 10 opposite to the upper cover 42, and a groove is formed in a middle region of the lower cover 80, and the groove provides a space for the limiting groove 30 to move downward. In another embodiment, when the moved element does not need to move downward, the distance between the inner surface of the lower cover 80 and the position-limiting groove 30 is not required, and the position-limiting groove 30 can be located between the inner surfaces of the lower cover 80, and the inner surfaces of the lower cover 80 play a role of supporting the position-limiting groove 30.

The lower cover 80 is prepared in advance and bonded to the supporting block 10 by thermocompression bonding, dry film bonding or structural adhesive bonding. The method of forming the lower cover 80 may be performed by omitting the step of forming the opening 41, referring to the method of forming the integrated structure (the integrated structure of the upper cover 42 and the side wall 43) described above.

Referring to fig. 33, step S05 is performed: the element to be moved is provided on the connecting arm 50. In this embodiment, the two intermediate structures are symmetrically arranged, each intermediate structure internally comprises an annular supporting block, the moved element 60 is arranged on the upper surface of the two supporting arms 50, and the two supporting arms 50 are symmetrically arranged relative to the moved element. Before the moved element is arranged on the connecting arm 50, the method further comprises the step of adhering an adhering and supporting element 70 on the connecting arm 50, wherein the moved element is adhered on the connecting arm 50 through the adhering and supporting element 70, and the adhering and supporting element 70 is used for supporting and connecting the moved element 60.

In another embodiment, the step of forming the intermediate structure comprises: two intermediate layers are formed on the substrate 200 from bottom to top, as described above. Referring to fig. 34, a dielectric film is formed on the upper surface of the second interlayer, and the dielectric film is patterned to form a third dielectric layer 101C on the first dielectric layer 101B of the second interlayer. And forming a sacrificial material to cover the third dielectric layer 101C and the region between the third dielectric layers 101C, performing a planarization process on the sacrificial material, removing the sacrificial material above the third dielectric layers, and forming a second sacrificial layer by the sacrificial material positioned between the third dielectric layers. The fixed end of the piezoelectric element 20 is bonded to the third dielectric layer 101C, and the movable end of the piezoelectric element 20 is located above the second sacrificial layer. Referring to fig. 35, a sacrificial material is formed to cover the third dielectric layer 101C, the upper surface of the piezoelectric element 20 and the second sacrificial layer, wherein the sacrificial material located above the region surrounded by the third dielectric layer 101C is the third sacrificial layer. Defining the area where the side wall of the limiting groove is located as a third area, removing the third sacrificial layer and the second sacrificial layer of the third area, and exposing the second dielectric layer 303B of the second intermediate layer. Forming a dielectric film, covering the exposed second dielectric layer 303B and the exposed third sacrificial layer of the second-layer interlayer, performing a planarization process on the dielectric film, and keeping the dielectric film in the third area as a seventh dielectric layer 303F, wherein the top surface of the seventh dielectric layer 303F is flush with the top surface of the third sacrificial layer. The seventh dielectric layer 303F serves as a sidewall of the stopper groove. A dielectric film (second dielectric material) is formed on the seventh dielectric layer 303F and the third sacrificial layer, the dielectric film is patterned, and the dielectric film above the region opposite to the second dielectric layer 303B of the second-layer intermediate layer is retained as a sixth dielectric layer 303E and is used as the top wall of the limiting groove.

The imaging module structure which limits the transverse movement of the moved element is manufactured by the method of the embodiment of the invention, and in the next step, the forming modes of the transverse movement limiting part and the connecting arm are flexible and various, wherein the supporting part and the connecting arm can be formed by etching the substrate, and the method is simple. The transverse movement limiting piece, the supporting block and the lower sealing cover can also form a relatively sealed space to prevent the pollution of the external environment.

It should be noted that, in the present specification, all the embodiments are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the structural embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.

The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims

1. An imaging module, comprising:

the piezoelectric elements comprise movable ends and fixed ends, the fixed ends are fixed on the supporting blocks, and the movable ends are at least partially positioned in the limiting grooves;

a lateral movement limit stop, comprising: a first side wall and a second side wall located on both sides of the connecting arm, the first side wall and the second side wall being distributed in a radial direction parallel to the moved element;

2. The imaging module of claim 1, wherein the lateral movement limiter comprises a first upper cover having a first opening through which the connecting arm passes, the first opening limiting lateral movement of the connecting arm as the first sidewall and the second sidewall, respectively, the first upper cover being located above the surface of the support block.

3. The imaging module according to claim 1, wherein the side of the support block to which the piezoelectric element is fixed is defined as an inner side of the support block, and the opposite side is defined as an outer side of the support block, and the lateral movement limiting member includes a second upper cover having a second opening through which the link arm passes and a support member supporting the second upper cover, the second opening limiting a lateral movement of the link arm as the first sidewall and the second sidewall, respectively, and the support member is located on an upper surface of the support block, an inner side surface or an outer side surface of the support block.

4. The imaging module of claim 3, wherein the support member is annular and surrounds an outer periphery of the support block, and the second upper cover covers an area surrounded by the support member.

5. The imaging module of claim 3, wherein the number of the support blocks is one, and the support blocks are annular and comprise an inner annular space and an outer annular space, and the inner annular space is the space;

or the number of the supporting blocks is more than two, each supporting block is annular, and the supporting blocks are symmetrically distributed on the periphery of the moved element;

the piezoelectric elements on the supporting block are symmetrically distributed on the periphery of the moved element.

6. The imaging module of claim 5, wherein said support member is located on an upper surface of said support block, said support member is ring-shaped, and said second upper cover covers an area enclosed by said support member.

7. The imaging module of claim 6, further comprising a lower cover, the lower cover being annular and attached to a lower surface of the support block; the second cover plate, the supporting part, the supporting block and the lower cover enclose a closed space.

8. The imaging module of claim 7, wherein the bottom cover has a groove, and the groove provides a moving space for the limiting groove.

9. The imaging module of claim 1, wherein the lateral movement limiting member comprises a lateral cover plate and a blocking wall respectively disposed on both sides of the connecting arm, the blocking wall and an end surface of the lateral cover plate being capable of receiving the connecting arm therebetween, the end surface of the lateral cover plate and the blocking wall respectively serving as the first sidewall and the second sidewall.

10. The imaging module of claim 9, wherein the transverse cover plate is located above the support block, and the blocking wall is located above a surface of the support block or inside the support block.

11. The imaging module of claim 1, wherein the lateral motion limiter is disposed within a space defined by the support blocks and includes a first wall and a second wall that are disposed opposite to each other and are configured as a first sidewall and a second sidewall, respectively.

12. The imaging module of claim 1, wherein the connecting arm comprises a vertical wall.

13. The imaging module of claim 1, further comprising a support member located on a lower surface of the moved member and extending circumferentially along the moved member, the connecting arm being coupled to the support member.

14. A method of manufacturing an imaging module, the imaging module comprising a moved element, the moved element comprising: a lens assembly, an imaging sensor element, an aperture or a lens sheet, the method comprising:

providing a substrate;

the moved member is disposed on the connecting arm.

15. The method of claim 14, wherein the retaining groove bottom wall has a portion flush with the surface of the support block, and forming the connecting arm comprises:

and patterning the substrate to form a connecting arm which is positioned on the limiting groove and connected with the limiting groove.

16. The method of claim 14, wherein forming the link arm comprises:

and preparing the connecting arm in advance, and bonding the connecting arm on the limiting groove.

17. The method of claim 14, wherein forming a sidewall on the support block, an upper cover on the sidewall comprises:

patterning the substrate to form sidewalls on the support block;

and the upper cover is bonded on the side wall.

18. The method according to claim 14, wherein a connecting arm is formed on a surface of the limiting groove to connect the limiting groove; forming a side wall on the support block, an upper cover on the side wall comprising:

first patterning the substrate to form an upper portion of the link arm;

after the first patterning, performing second patterning on the substrate to form a lower part of the connecting arm and the side wall; the area between the side wall and the connecting arm exposes the intermediate structure;

and the upper cover is bonded on the side wall.

19. The method of claim 14, wherein forming a sidewall on the support block, an upper cover on the sidewall comprises:

the side wall and the upper cover are integrated, and the side wall is bonded to the supporting block.

20. The method of claim 14, wherein forming the sidewall comprises: and forming a dielectric layer on the other side of the supporting block opposite to the substrate, and etching the dielectric layer to form the side wall.

21. The method of claim 14, wherein the support block is annular and the sidewall is annular.

22. The method of claim 14, wherein before or after removing the sacrificial layer, providing a lower cover, bonding the lower cover to a surface of the supporting block opposite to the upper cover, so that the upper cover, the sidewalls, the supporting block, and the lower cover enclose an accommodating space, and the piezoelectric element and the limiting groove are located in the accommodating space.

23. The method of manufacturing an imaging module of claim 14, further comprising: removing the sacrificial layer before or after the moved element is disposed on the connecting arm.

24. The method of claim 14, wherein the area of the support block is a first area and the area of the retaining groove is a second area;

forming the intermediate structure includes:

forming two intermediate layers on the substrate from bottom to top, each intermediate layer comprising: the first dielectric layer is positioned in the first area, the second dielectric layer is positioned in the second area, and the first sacrificial layer is positioned between the first dielectric layer and the second dielectric layer; the second medium layer is used as the bottom wall of the limiting groove;

forming third dielectric layers on the first dielectric layers and second sacrificial layers between the third dielectric layers;

bonding a fixed end of a piezoelectric element to the third medium layer, wherein a movable end of the piezoelectric element is positioned above the second medium layer;

forming a third sacrificial layer, side walls of the limiting groove in the second sacrificial layer and the third sacrificial layer, and a top wall of the limiting groove above the third sacrificial layer;

the supporting block includes: a first dielectric layer and a third dielectric layer.

25. The method of claim 24, wherein the forming a third sacrificial layer and sidewalls of the recess in the second and third sacrificial layers comprises:

defining a third area as an area for forming a side wall of a limiting groove, removing the second sacrificial layer of the third area, and forming a fourth dielectric layer in the third area;

forming a third sacrificial layer between the third dielectric layers, removing the third sacrificial layer above the fourth dielectric layer, and forming a fifth dielectric layer above the fourth dielectric layer; the fourth dielectric layer and the fifth dielectric layer form the side wall of the limiting groove;

and forming a first dielectric material on the third sacrificial layer and the fifth dielectric layer, and patterning the first dielectric material to form a sixth dielectric layer serving as the top wall of the limiting groove.

26. The method of claim 24, wherein the forming a third sacrificial layer and sidewalls of the recess in the second and third sacrificial layers comprises:

forming a third sacrificial layer to cover the third dielectric layer and a region between the third dielectric layers;

defining a third area as an area for forming a side wall of a limiting groove, removing the third sacrificial layer and the second sacrificial layer of the third area, and forming a seventh dielectric layer in the third area as the side wall of the limiting groove;

and forming a second dielectric material on the third sacrificial layer and the seventh dielectric layer, and patterning the second dielectric material to form a sixth dielectric layer serving as the top wall of the limiting groove.

27. The method of manufacturing an imaging module of claim 24, further comprising: forming an eighth dielectric layer over a surface of the third dielectric layer, the support block comprising: the first dielectric layer, the third dielectric layer, and the eighth dielectric layer.

28. The method of claim 14, wherein disposing the moved element on the connecting arm comprises: a support member is formed on an upper surface of the connection arm, an adhesive layer is formed on an upper surface of the support member, and the moved member is adhered to the support member by the adhesive layer.