CN112866444B

CN112866444B - Imaging module and manufacturing method thereof

Info

Publication number: CN112866444B
Application number: CN201911184357.9A
Authority: CN
Inventors: 黄河; 桂珞; 向阳辉
Original assignee: Ningbo Semiconductor International Corp
Current assignee: Ningbo Semiconductor International Corp
Priority date: 2019-11-27
Filing date: 2019-11-27
Publication date: 2023-04-28
Anticipated expiration: 2039-11-27
Also published as: CN112866444A

Abstract

The invention discloses an imaging module and a manufacturing method thereof, wherein the imaging module comprises: a moved element; at least one supporting block, which encloses a space and is suspended above the space by the moving element; the piezoelectric elements comprise movable ends and fixed ends, the fixed ends are fixed on the supporting blocks, and the movable ends are at least partially positioned in the limiting grooves; at least two piezoelectric elements are distributed on the periphery of the moved element; one end of the connecting arm is connected with the moved element, and the other end of the connecting arm is connected with the limit groove; a lateral movement limiter comprising: the first side wall and the second side wall are positioned at two sides of the connecting arm and are distributed along the radial direction parallel to the moved element; the external signal connecting end is electrically connected with the electrode in the piezoelectric element, and the movable end drives the moved element to move upwards or downwards through the connecting arm when the piezoelectric element is in an electrified state.

Description

Imaging module and manufacturing method thereof

Technical Field

The invention relates to the technical field of motion control, in particular to an imaging module and a manufacturing method thereof.

Background

In some electronic terminals, it is often necessary to make some of the components translate, vertically move or tilt, thereby achieving some specific functions. In various electronic terminals such as video cameras, still cameras, and cellular phones having a lens module, for example, a movable lens or an image sensor is generally displaced in an optical axis direction to focus or zoom, or in a direction perpendicular to the optical axis direction to prevent optical shake by a driving mechanism such as a VCM Motor (Voice Coil Actuator/Voice Coil Motor). However, unlike the conventional single-lens reflex camera, it is a great engineering challenge to realize the function in electronic terminals such as mobile phones, micro video cameras, etc. with a small space volume. Therefore, a structure for controlling the movement is desired to move the member to be moved in an ideal manner.

Disclosure of Invention

The invention aims to provide an imaging module and a manufacturing method thereof, which can solve the problems that the imaging module is large in size and a moved element moves transversely.

In order to achieve the above object, the present invention provides an imaging module, comprising:

a moved element including a lens group, an imaging sensing element, an aperture, or a lens sheet;

the movable element is suspended above the space;

the at least two piezoelectric elements comprise movable ends and fixed ends, the fixed ends are fixed on the supporting blocks, and the movable ends are at least partially positioned in the limiting grooves; the at least two piezoelectric elements are distributed on the periphery of the moved element;

one end of the connecting arm is connected with the moved element, and the other end of the connecting arm is connected with the limit groove;

a lateral movement limiter comprising: the first side wall and the second side wall are positioned at two sides of the connecting arm and are distributed along the radial direction of the moved element;

the external signal connecting end is electrically connected with the electrode in the piezoelectric element, and the movable end drives the moved element to move upwards or downwards through the connecting arm when the piezoelectric element is in an electrified state.

The invention also provides a manufacturing method of the imaging module, the imaging module comprises a moved element, and the moved element comprises: a lens group, an imaging sensing element, an aperture or a lens sheet, the method comprising:

providing a substrate;

forming at least one intermediate structure on the substrate, wherein the at least one intermediate structure encloses a space, and the moved element is positioned above the space; the intermediate structure comprises: the support block is positioned on the substrate and comprises a piezoelectric element with a movable end and a fixed end, the fixed end is fixed on the support block, the movable end at least partially stretches into the limit groove, and the limit groove and the piezoelectric element are embedded in the sacrificial layer;

forming a connecting arm connected with the limiting groove on the surface of the limiting groove;

forming a side wall and an upper cover positioned on the side wall on the supporting block, wherein the upper cover is provided with an opening, and the connecting arm extends out of the opening;

the moved element is bonded to the connecting arm.

The movable end of the piezoelectric element is provided with a part extending into the limit groove, the connecting arm is connected with the limit groove and the moved element, the movable end of the piezoelectric element is enabled to warp upwards or downwards by supplying power to the piezoelectric element, the movable end drives the connecting arm through the limit groove, and the connecting arm drives the moved element to move up and down. The lateral movement limiting parts are arranged on two sides of the connecting arm, so that the lateral movement of the connecting arm can be restrained, and the optical anti-shake effect can be realized.

Furthermore, the piezoelectric element is arranged in the relatively sealed space by arranging the upper cover and the lower cover above and below the supporting block, so that the piezoelectric element can be further protected from being polluted by the external environment. Compared with the traditional driving mechanisms such as a VCM motor, the piezoelectric element and the supporting block are light in combined mass, small in size, simple in structure and low in cost, multidimensional movement can be realized, the piezoelectric element is suitable for imaging modules with small space volumes, and the piezoelectric element is purely electric voltage driving and has no electromagnetic interference.

Drawings

Fig. 1 is a schematic diagram of an imaging module according to an embodiment of the invention.

Fig. 2A is a top view of fig. 1.

Fig. 2B is a top view of a support block with a ring structure according to an embodiment of the present invention.

Fig. 3 is a schematic structural diagram of a piezoelectric element with a rotating shaft structure according to an embodiment of the present invention.

Fig. 4 is a schematic cross-sectional view illustrating a structure in which a first sidewall and a second sidewall of a lateral stopper restrict movement of a connecting arm according to an embodiment of the present invention.

Fig. 5 is a schematic structural diagram of a piezoelectric device according to an embodiment of the invention.

Fig. 6 is a schematic structural diagram of an imaging module in the prior art.

Fig. 7 is a top view of fig. 6.

Fig. 8 is a schematic view showing the structure in which the moved member moves upward in the ideal state of the structure shown in fig. 6.

Fig. 9 is a schematic view of the structure shown in fig. 6, with the movable element being moved laterally.

Fig. 10 is a schematic structural view of a supporting block provided with two piezoelectric elements according to an embodiment of the present invention.

Fig. 11 is a schematic structural view of an end portion of a piezoelectric element according to an embodiment of the present invention extending into a limiting groove.

Fig. 12 is a schematic structural diagram of a multi-layer piezoelectric element according to an embodiment of the present invention.

Fig. 13-17 are schematic structural views of an imaging module according to various embodiments of the present invention.

Fig. 18-22 are schematic diagrams illustrating electrical connection of imaging modules according to various embodiments of the invention.

FIG. 23 is a flowchart of a method for manufacturing an imaging module according to an embodiment of the invention.

Fig. 24-33 are schematic structural diagrams corresponding to different stages of a manufacturing method of an imaging module according to an embodiment of the invention.

FIGS. 34-36 are schematic views of an imaging module manufacturing method according to another embodiment of the invention

Reference numerals illustrate:

10-supporting blocks; a 20-piezoelectric element; 201-rotating shaft; 30-a limit groove; 1000-lateral movement limiter 1001-first side wall; 1002-a second sidewall; 101-a second opening; 102-a second upper cover; 103-a support member; 104A-a first wall; 104B-a second wall; 105 a first upper cover; 106-a first opening; 107-transverse cover plates; 108-blocking the wall; 50-connecting arms; the upper half of the 50A-link arm; 50B-lower half of the connecting arm; 60-moved element; 70-a support element; 251-a first electrode lead; 252-second electrode terminal; 61-a third electrical connection; 62-fourth electrical connections; 63-a conductive plug; 64-bonding pads; 71-a first electrical connection; 72-a second electrical connection; 73-leading wire; a 74-conductive interconnect structure; 75-flexible electrical connection; 76-a conductive layer; 80-lower cover; 100-a circuit board; 211-odd layer electrode 211; 221-even layer electrode; 26-a conductive structure; 200-substrate; 101A-a first dielectric layer of a first interlayer; 101B-a first dielectric layer of a second interlayer; 101C-a third dielectric layer; 101D-eighth dielectric layers; 101D-1 lower eighth dielectric layer; 101D-2 upper eighth dielectric layer; 303A-a second dielectric layer of the first interlayer; 303B-a second dielectric layer of a second interlayer; 303C-a fourth dielectric layer; 303D-a fifth dielectric layer; 303E-sixth dielectric layer; 303F-seventh dielectric layer; 41-opening; 42-upper cover; 43-side wall.

Detailed Description

The imaging module and the manufacturing method thereof according to the present invention will be described in further detail with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description and drawings, however, it should be understood that the inventive concept may be embodied in many different forms and is not limited to the specific embodiments set forth herein. The drawings are in a very simplified form and are to non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.

It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

If the method herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some steps may be omitted and/or some other steps not described herein may be added to the method. If a component in one drawing is identical to a component in another drawing, the component will be easily recognized in all drawings, but in order to make the description of the drawings clearer, the specification does not refer to all the identical components in each drawing.

Example 1

Fig. 1 is a schematic structural diagram of an imaging module according to an embodiment of the invention, fig. 2A is a top view of fig. 1, please refer to fig. 1 and fig. 2A, the imaging module includes:

a moved member 60, the moved member 60 including a lens group, an imaging sensing member, an aperture, or a lens sheet;

at least one supporting block 10 enclosing a space above which the moved element 60 is suspended;

at least two piezoelectric elements 20, including a movable end and a fixed end, wherein the fixed end is fixed on the supporting block 10, and the movable end is at least partially positioned in the limiting groove 30; the at least two piezoelectric elements 20 are distributed around the periphery of the moved element 60;

A connecting arm 50 having one end connected to the moved member 60 and the other end connected to the limit groove 30;

a lateral movement limiter comprising: a first sidewall 1001 and a second sidewall 1002 located at both sides of the connecting arm 50, wherein the first sidewall 1001 and the second sidewall 1002 are distributed along the radial direction of the moved element 60;

the external signal connection end is electrically connected with the electrode in the piezoelectric element 20, and the movable end drives the moved element 60 to move upwards or downwards through the connection arm 50 when the piezoelectric element 20 is in an energized state.

Specifically, the at least one supporting block 10 (2 are shown in this embodiment as an example) encloses a space (see the space enclosed by two supporting blocks 10 shown by the dotted line in fig. 2A), and the moved element 60 is suspended above the space. The space enclosed by the at least one support block 10 includes two cases: referring to fig. 2B, one case is that the support blocks 10 are one, at this time, the support blocks 10 are annular, including an inner annular space and an outer annular space, the inner annular space is the space (shown by a dotted line), and the other case is that the support blocks 10 are plural and symmetrically or asymmetrically distributed around the periphery of the moved element 60, and the space surrounded by the plural support blocks 10 is the space. It should be noted that the space above is not limited to being located within the boundary of the space enclosed by the support block 10, that is, the boundary of the moved element 60 may be larger than the boundary of the space enclosed by the support block 10 or smaller than the boundary of the space enclosed by the support block 10.

The piezoelectric elements 20 include a movable end and a fixed end, the fixed end is fixed on the supporting block 10, and the movable end is at least partially located in the limiting groove 30. The movable end is at least partially located in the limiting groove 30 and includes two cases, one is that, referring to fig. 3, two sides of the movable end are provided with rotating shafts 201, the rotating shafts 201 extend into the limiting groove 30, and the rotating shafts 201 can solve the problem that the movable end of the piezoelectric element is clamped by the limiting groove 30 in the moving process. The principle thereof will be described in detail hereinafter. Alternatively, the two sides of the movable end of the piezoelectric element 20 have no rotating shaft 201, and the end of the movable end is located in the limiting groove 30.

With continued reference to fig. 1, the connecting arm 50 has one end connected to the moved member 60 and the other end connected to the limit groove 30. In this example, the lower surface of the moved member 60 is further bonded with a support member 70, the support member 70 extending outwardly in the circumferential direction of the moved member 60, and the connection arm 50 is connected to the lower surface of the support member 70. The support member 70 is for supporting the moved member 60. In this embodiment, the support member 70 is a film structure made of a material such as monocrystalline silicon, silicon nitride, silicon oxide, or silicon carbide. In other examples, the support member 70 may not be provided, and the connection arm 50 is directly adhered to the lower surface of the moved member 60.

The lateral movement limiter, referring to fig. 1 and 4, comprises: a first sidewall 1001 and a second sidewall 1002 located at two sides of the connecting arm, wherein the first sidewall 1001 and the second sidewall 1002 are distributed along a radial direction parallel to the moved element. Fig. 4 is a schematic cross-sectional view of the first side wall 1001 and the second side wall 1002 of the lateral movement limiter, which limits the lateral movement of the connecting arm 50, and can be also regarded as a partially enlarged view of the broken line portion in fig. 1. The arrow direction is the direction of lateral movement of the connecting arm 50, and the distance between the first side wall 1001 and the second side wall 1002 and the connecting arm 50 is small, and when the connecting arm 50 moves in the arrow direction, the lateral movement of the connecting arm 50 is restricted by the first side wall 1001 and the second side wall 1002. In this embodiment, the lateral movement limiting member includes a supporting member 103 located on the supporting block 10, a second upper cover 102 located above the supporting member 103, the second upper cover 102 is provided with a second opening 101, the connecting arm 50 passes through the second opening 101, and two side walls of the second opening 101, which limit the lateral movement of the connecting arm 50, serve as a first side wall 1001 and a second side wall 1002, respectively. External signal connections (not shown) are described in detail below. Is electrically connected to the electrode in the piezoelectric element 20, and the movable end drives the moved element 60 to move up or down through the connecting arm 50 in the energized state.

The principle of the upward or downward movement of the movable end of the piezoelectric element in the energized state is described below. Referring to fig. 5, in this embodiment, the specific structure of the piezoelectric element 20 includes a supporting layer 24, and a piezoelectric stack structure located on the supporting layer 24, where the piezoelectric stack structure includes a second electrode 22, a piezoelectric film 23, and a first electrode 21 stacked in sequence from bottom to top, an insulating layer 25 is further disposed above the first electrode 21, the first electrode 21 and the second electrode 22 are respectively connected to a first electrode lead-out 251 and a second electrode lead-out 252, and the first electrode lead-out 251 and the second electrode lead-out 252 are both located in the insulating layer 25.

The first electrode lead 251 and the second electrode lead 252 are energized, a pressure difference is generated between the upper surface and the lower surface of the piezoelectric film 23, so that the piezoelectric film 23 contracts, and since the support layer 24 cannot expand and contract, the piezoelectric element 20 is caused to warp upward or downward after being energized (the direction of warping, the degree of warping depends on the voltage applied to the upper and lower surfaces of the piezoelectric film 23), so that the piezoelectric element 20 is bent upward or downward as a whole, so that the moved element can be raised or lowered as a whole through the limit grooves and the connecting arms, so that the vertical position of the moved element is changed, and optical automatic focusing is realized.

The piezoelectric film 23 is made of piezoelectric material which can be deformed by energizing, for example, quartz crystal, aluminum nitride, zinc oxide, lead zirconate titanate, barium titanate, lithium gallate, lithium germanate or titanium germanate. The material of the supporting layer 24 is a dielectric material that is not conductive, such as silicon oxide, silicon nitride, etc.

In this embodiment, the first electrode lead 251 and the second electrode lead 252 are located on the top surface of the piezoelectric element, and in other embodiments, the first electrode lead 251 and the second electrode lead 252 may be located on the bottom surface of the piezoelectric element 20, that is, in the supporting layer 24, or the first electrode lead 251 and the second electrode lead 252 may be located on the top surface and the bottom surface of the piezoelectric element 20, respectively, which is not limited by the present invention.

The following is a brief description of the process of moving the moved element by the piezoelectric element through the limit slot and the reason why the moved element moves laterally in an example with reference to the accompanying drawings. Fig. 6 is a simplified schematic diagram of an imaging module, in which the piezoelectric element 20 is in a free state, fig. 7 is a top view of fig. 6, fig. 8 is a schematic diagram of an ideal state structure when the piezoelectric element 20 drives the moved element 60 to move upwards, and fig. 9 is a schematic diagram of the moved element 60 to move laterally to the left. The limiting groove 30 is shown on the lower surface of the moved member 60. The reason for the lateral movement is: referring to fig. 9, when the degree of warpage of the piezoelectric element 20 on the left side is greater than the degree of warpage of the piezoelectric element 20 on the right side, the moved element 60 generates lateral movement to the left. With continued reference to fig. 1, in the present embodiment, the limiting groove 30 is not directly bonded to the moved member 60, but is connected to the connecting arm 50, and the connecting arm 50 limits its lateral movement by the lateral movement limiter, thereby limiting the lateral movement of the moved member 60.

In the present embodiment, the pair of support blocks 10 are symmetrically disposed on the outer periphery of the moved element 60. Each support block 10 is provided with a piezoelectric element 20, and the support block 10 comprises two sub-support blocks (not shown in the figure) arranged one above the other, between which the piezoelectric element 20 is fixed, which is more advantageous for the fixation of the piezoelectric element 20. In other embodiments, the piezoelectric element 20 may be fixed to the upper surface of the support block 10. In another example, when the moved member 60 is heavy, a plurality of piezoelectric elements 20 may be provided on one support block 10. Referring to fig. 10, two piezoelectric elements are provided on each support block. In another embodiment, the support block is one and annular, and the piezoelectric elements are symmetrically or asymmetrically arranged on the support block.

With continued reference to fig. 1, in this embodiment, the movable end of the piezoelectric element 20 extends out of the support block 10 to form a cantilever structure. In other examples, the entirety of the piezoelectric element 20 may be located on the support block 10. When the piezoelectric element 20 is integrally located on the support block 10, the movable end of the piezoelectric element 20 is suitable for the occasion where the movable end of the movable element 60 is required to be lifted up, and when the movable end of the piezoelectric element 20 is protruded out of the support block 10, the movable end can be used for the occasion where the movable end of the movable element 60 is required to be lifted up or down. The supporting block 10 is connected with the fixed end of the piezoelectric element 20 through adhesive, or through a dry film.

Referring to fig. 7, two sides of the movable end of the piezoelectric element 20 are provided with a rotating shaft 201, the limiting groove 30 is provided with a first opening along the length direction of the rotating shaft, and the rotating shaft 201 extends into the first opening. The limiting groove 30 provides a moving space for the rotating shaft 201, and the rotating shaft 201 moves upwards or downwards with the limiting groove 30 when the piezoelectric element 20 is in an energized state. The limiting groove 30 provides a moving space for the rotating shaft 201, which means that the size of the limiting groove 30 is larger than the size of the movable end of the rotating shaft 201, that is, the length of the limiting groove 30 is larger than the length of the rotating shaft 201, and the height of the limiting groove 30 is larger than or equal to the diameter of the rotating shaft 201, so that the rotating shaft 201 can freely rotate and slide in the limiting groove 30, and when the piezoelectric element 20 warps, the rotating shaft 201 can rotate in the limiting groove 30, so that the movable end of the piezoelectric element 20 is prevented from being blocked. When the height of the limit groove 30 is equal to the diameter of the rotating shaft 201, the lifting and descending amount of the moved element 60 can be better controlled, and the problem that the space allowance between the rotating shaft 201 and the limit groove 30 needs to be overcome is avoided.

Referring to fig. 11, in another example, the piezoelectric element 20 has no rotation shaft, and the limit groove 30 is provided with a second opening along the direction of the movable end of the piezoelectric element 20, into which the movable end of the piezoelectric element 20 protrudes.

With continued reference to fig. 1, a connecting arm 50 is provided between the moved member 60 and the limiting groove 30. In this embodiment, the moved element 60 and the limiting groove 30 are provided with overlapping areas in the vertical direction, the connecting arm 50 is located in the overlapping areas, and is a vertical wall, and when the limiting groove 30 is located on the outer side of the moved element 60, the connecting arm 50 may be a bent wall. The support element 70 extending outwards may be adhered to the bottom surface of the moved element 60, so that the support element 70 and the limit groove 30 have an overlapping area in the vertical direction, and the connecting arm 50 may be adhered to the lower surface of the support element 70, where the connecting arm 50 may be a vertical wall. It should be noted that the connecting arm 50 is connected to the limiting grooves 30, and each limiting groove 30 may correspond to one connecting arm 50, and the connecting arms are arranged in a dispersed manner, or the plurality of limiting grooves 30 may correspond to one connecting arm 50, for example, when the plurality of limiting grooves 30 are distributed along the circumferential direction of the moved element 60, the plurality of limiting grooves 30 share one connecting arm 50, and the connecting arm 50 may be annular. In this embodiment, the connection arm 50 is adhered to the upper surface of the top wall of the limiting groove, and in other embodiments, the connection arm 50 may be connected to other surfaces of the limiting groove 30, and the limiting groove 30 may drive the connection arm 50 to move.

With continued reference to fig. 1, in this embodiment, both support blocks 10 are annular, and the lateral movement limiter comprises a support member 103 and a second upper cover 102 with a second opening 101 above the support member 103, through which the connecting arm 50 passes. In this embodiment, the supporting member 103 is a closed ring shape for supporting the second upper cover 102, and provides a moving space for upward movement of the piezoelectric element 20. The second opening 101 is shaped to match the connecting arm 50 and is sized slightly larger than the outer diameter of the connecting arm 50. Two side walls of the second opening 101 restricting the lateral movement of the connecting arm 50 serve as a first side wall and a second side wall of the lateral movement restricting member, respectively. The support member 103 is also annular and located on the upper surface of the support block 10. The outer edge of the support member 103 may coincide with the outer edge of the support block 10, or the outer edge of the support member 103 is located inside the outer edge of the support block 10, the support member 103 surrounding the connection arm 50. In other embodiments, the supporting member 103 is not limited to being located on the upper surface of the supporting block 10, but may be located on the inner side or the outer side of the supporting block 10. The inner or outer side here includes both cases where the support member 103 is in contact with or out of contact with the support block 10.

With continued reference to fig. 1, in this embodiment, the lower cover 80 is further included below the supporting block 10, where the lower cover 80, the supporting block 10, the supporting member 103, and the second upper cover 102 form a sealed space (except for the periphery of the connecting arm 50), and the sealed space can avoid dust, organic matter, moisture and other pollution in the external space. In this embodiment, a groove is provided in the middle of the lower cover 80, and the groove provides a space for the piezoelectric element 20 to move downward. In another example, when the piezoelectric element 20 does not need to move downward, the inner surface of the lower cover 80 may contact the bottom surface of the limit groove 30, and the inner surface of the lower cover 80 may support the limit groove 30. Of course, the lower cover 80 may not be included in other embodiments.

In the present embodiment, the distance by which the movable element 60 can move up and down is L, the distance from the lower surface of the piezoelectric element 20 to the inner surface of the lower cover 80 is half of L, and the distance from the upper surface of the piezoelectric element 20 to the inner surface of the upper cover 102 is half of L, which minimizes the height between the upper cover 102 and the lower cover 80 in the case of satisfying the movement displacement.

The displacement of the moved element 60 is determined by the warp distance of the piezoelectric element 20, and when the piezoelectric element 20 warps upward and the limit groove 30 contacts the inner surface of the upper cover 102, the upward movement distance at this time is the maximum distance, and similarly, when the limit groove 30 contacts the inner surface of the lower cover 80, the maximum distance of downward movement of the piezoelectric element 20 is the maximum distance. The piezoelectric element 20 moves downward, and when the adhesive support element 70 contacts the upper surface of the upper cover 102, the moved element 20 cannot move downward, so that the distance between the adhesive support element 70 and the upper surface of the upper cover 102 is limited to the displacement of the downward movement, and in this example, the distance between the upper surface of the upper cover 102 and the lower surface of the adhesive support structure is also half of L.

In this embodiment, the support block 10 has two independent annular shapes, which form two independent sealed spaces, and in another embodiment, the support block has an integral annular shape, which forms an integral sealed space.

Example 2

Referring to fig. 13, the support blocks 10 are a pair and symmetrically distributed on two sides of the moved element 60, the upper surface of each support block 10 is provided with one piezoelectric element 20, the two piezoelectric elements 20 are symmetrically arranged, two vertical first walls 104A and two vertical second walls 104B are arranged on two sides of the connecting arm 50 along the length direction of the piezoelectric element 20, the two vertical first walls 104A and the two vertical second walls 104B are respectively used as a first side wall and a second side wall of a lateral movement limiting piece, the distance between the two vertical first walls 104A and the two vertical second walls 104B is slightly larger than the outer diameter of the connecting arm 50, when the piezoelectric element 20 warps, the movable end of the piezoelectric element 20 drives the connecting arm 50 through the limiting groove 30, the connecting arm 50 drives the moved element 60 to move upwards or downwards, and when the connecting arm 50 has a lateral movement trend, the two vertical first walls 104A and the second walls 104B can block the lateral movement of the connecting arm 50. In this embodiment, the lower ends of the two vertical first walls 104A and the second walls 104B are fixed on the circuit board, and in other embodiments, the two vertical first walls 104A and the second walls 104B are not limited to being connected to the circuit board, for example, when the supporting block 10 is disposed around the lower portion of the connecting arm 50, and may be located on the supporting block 10, or one of them is located on the supporting block 10, and the other is located on the circuit board.

In this embodiment, the connection arm 50 is connected to the top surface of the limiting slot, and the connection arm 50 is provided with a portion extending out of the width of the limiting slot 30 (the direction from the fixed end to the movable end of the piezoelectric element 20 is the length direction, the length direction and the width direction of the limiting slot are the same as the length direction and the width direction of the piezoelectric element 20), the two ends of the connection arm 50 can extend out of both sides of the width of the limiting slot 30, or only one end of the connection arm 50 extends out of one side of the limiting slot 30, and when only one end of the connection arm 50 extends out of the one side of the limiting slot 30, the two sides of the extending portion are respectively provided with the first wall 104A and the second wall 104B. When the two ends of the connecting arm 50 extend out of the limiting groove 30, the first wall 104A and the second wall 104B may be disposed on two sides of the extending portion of each end, or only two opposite first walls 104A and second walls 104B may be disposed on one end, or the first wall 104A may be disposed on one side of one end, and the second wall 104B may be disposed on the other side of the other end.

Example 3

Referring to fig. 14, the support blocks 10 are a pair, symmetrically distributed on both sides of the moved element 60, the support block 10 includes two sub-support blocks in the up-down direction, and the piezoelectric element 20 is fixed between the two sub-support blocks. The lateral movement limiting member is a first upper cover 105 with a first opening 106, which is disposed on the upper surface of the supporting block 10, wherein one end of the connecting arm 50 is connected to the limiting groove 30 through the first opening 106, the other end is connected to the lower surface of the moved element 60, the shape of the first opening 106 is matched with the connecting arm 50, the size of the first opening is slightly larger than the outer diameter of the connecting arm 50, and two inner side walls of the first opening 106, which limit the lateral movement of the connecting arm 50, are used as a first side wall and a second side wall of the lateral movement limiting member. In this embodiment, a first upper cover 105 is disposed on each supporting block 10, each connecting arm 50 corresponds to one first upper cover 105, the first upper cover 105 is in the dotted line, referring to fig. 15, in another embodiment, the first upper covers 105 cover two supporting blocks 10 at the same time, and the area in the middle of the supporting blocks 10, the first upper covers 105 are in the dotted line frame, and the number of the first openings 106 is identical to the number of the connecting arms. In addition, in the present embodiment, the connecting arm 50 does not need to be provided with a portion extending to both sides with respect to the stopper groove 30.

Example 4

Referring to fig. 16, the piezoelectric element 20 is located between two sub-supporting blocks arranged vertically, and the lateral movement limiting member includes a lateral cover plate 107 located on the upper surface of the supporting block 10 with an end surface opposite to the connecting arm 50, and a blocking wall 108 located on the other side of the connecting arm opposite to the end surface of the lateral cover plate 107. The end surface of the transverse cover plate 107 opposite to the connecting arm 50 and the blocking wall 108 are respectively used as a first side wall and a second side wall of the transverse movement limiting member, and the end surfaces of the connecting arm 50 and the blocking wall 108 and the end surfaces of the connecting arm 50 and the open end of the transverse cover plate 107 are respectively provided with smaller distances so as to limit the transverse movement of the connecting arm. In this embodiment, at least one end of the connecting arm 50 extends out of the side surface of the limiting groove 30, and the blocking wall 108 is disposed on one side of the outwardly extending portion of the connecting arm 50, opposite to the transverse cover 107, and the blocking wall 108 may be connected to the circuit board or the supporting block 10.

Example 5

Referring to fig. 17, in the present embodiment, a lateral movement limiting member is provided at the outer periphery of the support block 10, surrounding the support block 10 therein. The supporting block 10 is annular, and the piezoelectric element 20 is located the surface top symmetry setting of supporting block 10, and the lateral movement locating part includes: and a support member 103, a second upper cover 102 positioned on the support member 103, the second upper cover 102 being provided with a second opening 101. The connecting arm 50 passes through the second opening 101, and has one end connected to the limiting groove 30 and the other end connected to the bottom surface of the moved member 60. Wherein the supporting member 103 is ring-shaped, surrounds the outer circumference of the supporting block 10, and the connecting arm 50 is ring-shaped as one body. The second upper cover 102 entirely covers the area surrounded by the support member 103. The support member 103 and the second upper cover 102 constitute a relatively sealed space (except for the second opening 101). In another example, the supporting member 103 may be located on the supporting block 10, and the additional supporting member 103 provides a space for the upward movement of the limiting groove 30, and the shape of the supporting member 103 may be the same as that of the supporting block 10, or the supporting member 103 may be provided only on a part of the surface of the supporting block 10.

With continued reference to fig. 17, the first electrode lead-out terminal and the second electrode lead-out terminal of the piezoelectric element 20 are both located on the top surface of the piezoelectric element 20, and no other covering structure is located above the fixed end of the piezoelectric element 20, and the first electrode lead-out terminal and the second electrode lead-out terminal are directly used as external signal connection terminals, and are directly electrically connected with the circuit board through the lead wire 73.

Referring to fig. 18, the first electrode lead-out terminal and the second electrode lead-out terminal of the piezoelectric element 20 are both located on the bottom surface of the piezoelectric element 20. The external signal connection terminals are a third electrical connection terminal 61 and a fourth electrical connection terminal 62, which are both located on the bottom surface of the support block 10 and directly below the piezoelectric element 20. The third electrical connection terminal 61 is electrically connected to the first electrode lead-out terminal of the piezoelectric element 20 through the conductive plug 63, the fourth electrical connection terminal 62 is electrically connected to the second electrode lead-out terminal of the piezoelectric element 20 through the conductive plug 63, and the two conductive plugs 63 are located in the support block 10.

Referring to fig. 19, when the fixed end of the piezoelectric element 20 is located in the middle of the supporting block 10, the first electrode lead-out terminal and the second electrode lead-out terminal of the piezoelectric element 20 are located on the top surface and the bottom surface of the piezoelectric element 20, respectively. The third electrical connection terminal 61 and the fourth electrical connection terminal 62 of the external signal connection terminal are respectively located on the top surface and the bottom surface of the supporting block 10 and located right above and right below the piezoelectric element 20, the third electrical connection terminal 61 is electrically connected with the first electrode lead-out terminal 251 of the piezoelectric element 20 through the conductive plug 63, the fourth electrical connection terminal 62 is electrically connected with the second electrode lead-out terminal 252 of the piezoelectric element 20 through the conductive plug 63, and the two conductive plugs 63 are located in the supporting block 10. In this embodiment, the upper surface of the support block 10 is provided with an area not covered by the first upper cover 105, the third electrical connection terminal 61 is located above the support block 10 and not covered by the first upper cover 105, and in other embodiments, the third electrical connection terminal 61 may be located on the upper surface of the first upper cover 105, where the conductive plug 63 needs to pass through both the support block 10 and the first upper cover 105.

Referring to fig. 20, the first electrode lead-out 251 and the second electrode lead-out 252 of the piezoelectric element 20 are both located on the bottom surface of the piezoelectric element 20, the imaging module is provided with a lower cover 80, the third electrical connection 61 and the fourth electrical connection 62 are located on the bottom surface of the lower cover 80 and directly under the piezoelectric element 20, the third electrical connection 61 is electrically connected with the first electrode lead-out 251 of the piezoelectric element 20 through the conductive plug 63, the fourth electrical connection 62 is electrically connected with the second electrode lead-out 252 of the piezoelectric element 20 through the conductive plug 63, and the two conductive plugs 63 pass through the supporting block 10 and the lower cover 80.

It should be understood that when the third and fourth

electrical connection terminals

61 and 62 are not facing the piezoelectric element 20, the third and fourth

electrical connection terminals

61 and 62 may also be electrically connected to the first and second electrode lead-out terminals 251 and 252 using rewiring.

With continued reference to fig. 20, when the moved element 60 needs to be connected to an external electrical signal, if the moved element 60 is an imaging sensor element, the top surface of the supporting block 10 is provided with a first electrical connection end 71, and the edge of the imaging sensor element is provided with a second electrical connection end 72, the closer the first electrical connection end 71 is to the imaging sensor element, the better the first electrical connection end 71 and the second electrical connection end 72 are electrically connected through a lead 73, and the first electrical connection end 71 can be electrically connected with the circuit board 100 through a lead (lead not shown) so that the circuit board 100 supplies power or signals to the imaging sensor element. The first electrical connection terminal 71 may also be located on the second upper cover 102 and then connected to the circuit board 100 through a lead, or directly connected to the circuit board 100 through a lead.

In one embodiment, referring to fig. 21, the second electrical connection terminal 72 is located on the upper surface of the moved element 60, the conductive layer 76 is disposed in the second upper cover 102, the second electrical connection terminal 72 is electrically connected to the conductive layer 76 through the lead 73, and the connection position between the lead 73 and the conductive layer 76 is as close to the second electrical connection terminal 72 as possible, so as to shorten the length of the lead 73. The conductive layer 76 extends to above the supporting member 103, a conductive plug 63 is disposed below the conductive layer 76, the conductive plug 63 penetrates through the supporting member 103, the supporting block 10 and the lower cover 80, and is electrically connected to the pad 64 on the bottom surface of the lower cover 80, and the pad 64 serves as an external signal connection terminal.

In another embodiment, referring to fig. 22, the second electrical connection end 72 is located on the lower surface of the moved element 60, the conductive interconnection structure 74 is disposed in the connection arm 50, the top end of the conductive interconnection structure 74 is connected to the second electrical connection end 72, the bottom end extends to the side wall of the limit groove (the side wall is opposite to the movable end of the piezoelectric element), the side wall of the limit groove is connected with the flexible electrical connection element 75, the flexible electrical connection element 75 is elastically deformable, the other end of the flexible electrical connection element 75 is connected to the conductive layer 76 of the piezoelectric element 20, for example, an insulating layer may be disposed on the bottom surface of the piezoelectric element 20, the conductive layer 76 is disposed in the insulating layer, the conductive plug 63 penetrating the supporting block 10 and the lower cover 80 is disposed on the bottom surface of the conductive layer 76, one end of the conductive plug 63 is connected to the conductive layer 76, the other end is connected to the pad 64 on the bottom surface of the lower cover 80, and the pad 64 is used as an external signal connection end.

In combination with the first two embodiments, when the second electrical connection end 72 is located on the upper surface of the moved element 60, a through hole is formed in the second upper cover 102, the top wall of the limiting groove is provided with a conductive structure penetrating through the top wall, the upper end of the conductive structure is electrically connected with the second electrical connection end 72 through a lead wire penetrating through the through hole, the lower end of the conductive structure is connected with a flexible electrical connection member, the flexible electrical connection member is electrically connected with the conductive layer 76 in the piezoelectric element, and other structures are the same as those of the previous embodiment. In another embodiment, the second electrical connection end 72 is located on the upper surface of the moved element 60, a through hole is provided on the upper cover 42, and a lead wire passes through the through hole to connect the second electrical connection end 72 with the conductive layer 76 located inside the piezoelectric element 20, and the rest of the structure is referred to above and will not be repeated herein.

Through the embodiments, the lateral movement limiting pieces are arranged on two sides of the connecting arm, so that the lateral movement of the connecting arm can be restrained, the lateral movement of the moved element can be restrained, and the optical anti-shake effect can be realized. Furthermore, the piezoelectric element is arranged in a relatively sealed space by arranging the upper cover and the lower cover on the upper part and the lower part of the supporting block, so that the piezoelectric element can be prevented from being polluted by the external environment.

An embodiment of the present invention further provides a method for manufacturing an imaging module, and fig. 23 shows a flowchart of a method for manufacturing an imaging module. Fig. 24 to 33 are schematic structural diagrams of different stages corresponding to corresponding steps of a method for manufacturing an imaging module according to an embodiment of the invention, and the method for manufacturing an imaging module will be described in detail with reference to fig. 23 to 33.

The manufacturing method of the imaging module comprises the following steps:

s01: providing a substrate 200;

s02: at least one intermediate structure is formed on the substrate 200, the at least one intermediate structure defining a space,

the moved element is located spatially above, and the intermediate structure (shown in phantom in fig. 25B) includes: the supporting block 10 on the substrate 200 includes a piezoelectric element 20 with a movable end and a fixed end, the fixed end is fixed on the supporting block 10, the movable end at least partially extends into the limit groove 30, and the limit groove 30 and the piezoelectric element 20 are embedded in the sacrificial layer. The space surrounded by at least one intermediate structure means that the supporting blocks 10 may be 1 or more, when the number of the supporting blocks is 1, the supporting blocks are annular, including an inner annular space and an outer annular space, the inner annular space is the space, the supporting blocks 10 may be more, symmetrically or asymmetrically distributed around the periphery of the moved element 60, and the space surrounded by the supporting blocks is the space. It should be noted that, the space above is not limited to being located directly above the space enclosed by the supporting blocks, that is, the boundary of the moved element 60 may be larger than the boundary of the space enclosed by the supporting block 10 or may be smaller than the boundary of the space enclosed by the supporting block 10. The movable end at least partially stretches into the limit groove comprises two conditions: in one case, referring to fig. 3, two sides of the movable end are provided with rotating shafts 201, the rotating shafts 201 extend into the limiting grooves 30, and the rotating shafts 201 can solve the problem that the movable end of the piezoelectric element is blocked by the limiting grooves in the moving process. Alternatively, there is no rotating shaft on both sides of the movable end, and the end of the movable end is located in the limit groove 30.

S03: a connection arm 50 connected to the limit groove 30 is formed on the surface of the limit groove 30;

s04: a side wall 43 and an upper cover 42 positioned on the side wall are formed on the supporting block, the upper cover is provided with an opening 41, and the connecting arm 50 extends out of the opening 41;

s05: the element to be moved is arranged on the connecting arm.

Referring to fig. 24, step S01 is performed to provide a substrate 200, where the substrate 200 may be made of at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors, and also includes multilayer structures composed of these semiconductors, and may be ceramic substrates such as alumina, quartz, and the like. The substrate 200 in this embodiment is monocrystalline silicon.

Referring to fig. 25A and 25B, fig. 25B is a cross-sectional view of fig. 25A along the line A-A. Step S02 is performed to form at least one intermediate structure (within the dashed box) on the substrate 200, wherein the at least one intermediate structure encloses a space above which the moved element is located. The intermediate structure comprises: the supporting block 10 on the substrate 200 includes a piezoelectric element 20 with a movable end and a fixed end, the fixed end is fixed on the supporting block 10, the movable end at least partially extends into the limit groove 30, and the limit groove 30 and the piezoelectric element 20 are embedded in the sacrificial layer.

In this embodiment, the forming of the intermediate structure specifically includes the following steps:

firstly, defining the region where the supporting block 10 is located as a first region, and the region where the limiting groove 30 is located as a second region;

s21, forming two layers of intermediate layers on the substrate 200 from bottom to top, wherein each layer of intermediate layer comprises: the first medium layer is positioned in the first area, the second medium layer is positioned in the second area, and the first sacrificial layer is positioned between the first medium layer and the second medium layer; the second dielectric layer is used as the bottom wall of the limit groove;

referring to fig. 26A and 26B, fig. 26B is a cross-sectional view of fig. 26A along a line A-A, forming a first interlayer on the substrate 200 includes: a dielectric film is formed on the substrate 200, and methods of forming the dielectric film include chemical deposition and physical deposition. The dielectric film is etched to form a first dielectric layer 101A of the first interlayer and a second dielectric layer 303A of the first interlayer. And forming a sacrificial material, wherein the sacrificial material covers the first dielectric layer 101A of the first interlayer, the second dielectric layer 303A of the first interlayer and the area between the first dielectric layer 101A of the first interlayer and the second dielectric layer 303A of the first interlayer, and the sacrificial material can be formed by a chemical vapor deposition or physical vapor deposition method. And carrying out a planarization process on the sacrificial material, and removing the sacrificial material above the first dielectric layer 101A of the first interlayer and the second dielectric layer 303A of the first interlayer, so that the top surface of the sacrificial material between the first dielectric layer 101A of the first interlayer and the second dielectric layer 303A of the first interlayer is flush with the top surface of the first dielectric layer 101A of the first interlayer and the second dielectric layer 303A of the first interlayer, wherein the first sacrificial layer comprises the sacrificial material between the first dielectric layer 101A of the first interlayer and the second dielectric layer 303A of the first interlayer. The material of the dielectric film comprises: silicon dioxide, silicon nitride or silicon carbide. The materials of the sacrificial material include: phosphosilicate glass, borophosphosilicate glass, germanium, carbon, low-temperature silicon dioxide, polyimide, and the like, but is not limited to the above materials.

Forming the second interlayer includes: forming a dielectric film on the first dielectric layer 101A of the first interlayer, the second dielectric layer 303A of the first interlayer and the first sacrificial layer, etching the dielectric film, forming the first dielectric layer 101B of the second interlayer located above the surface of the first dielectric layer 101A of the first interlayer, and the second dielectric layer 303B of the second interlayer located above the second dielectric layer 303A of the first interlayer, wherein the shape of the second dielectric layer 303B of the second interlayer may be identical to or inconsistent with the shape of the second dielectric layer 303A of the first interlayer, and in this example, the area occupied by the second dielectric layer 303B of the second interlayer is larger than the area occupied by the second dielectric layer 303A of the first interlayer. And forming a sacrificial material covering the first dielectric layer 101B of the second interlayer, the second dielectric layer 303B of the second interlayer, and the region between the first dielectric layer 101B of the second interlayer and the second dielectric layer 303B of the second interlayer, wherein the first sacrificial layer further comprises the sacrificial material between the first dielectric layer 101B of the second interlayer and the second dielectric layer 303B of the second interlayer. The materials and methods of formation of the dielectric film and sacrificial material are described above.

S22, forming a third dielectric layer on the first dielectric layer and a second sacrificial layer positioned between the third dielectric layers;

referring to fig. 27, a dielectric thin film is formed over the second intermediate structure, and a third dielectric layer 101C is formed by patterning the dielectric thin film. In this embodiment, the region where the sidewall of the limiting groove is located is defined as a third region, and when patterning the dielectric thin film, a fourth dielectric layer 303C is formed in the third region at the same time as the lower portion of the sidewall of the limiting groove. In another example, the lower portion of the limit groove may not be formed in this step. Next, a sacrificial material is formed to cover the third dielectric layer 101C, the fourth dielectric layer 303C, and the region between the third dielectric layer 101C and the fourth dielectric layer 303C, and a planarization process is performed on the sacrificial material to remove the sacrificial material above the third dielectric layer 101C and the fourth dielectric layer 303C. Wherein the sacrificial material located between the third dielectric layers 101C is a second sacrificial layer.

S23, bonding the fixed end of the piezoelectric element to the third dielectric layer, wherein the movable end of the piezoelectric element is positioned above the second dielectric layer.

The structure of the piezoelectric element is described with reference to the foregoing embodiments, and details thereof are omitted herein.

Referring to fig. 28, the method of bonding the fixed end of the piezoelectric element 20 to the third dielectric layer 101C includes: the structural adhesive or dry film bond, the movable end of the piezoelectric element 20 is located on the second sacrificial layer over the second dielectric layer 303B of the second interlayer.

S24, forming a third sacrificial layer and side walls of the limiting grooves in the second sacrificial layer and the third sacrificial layer, and forming top walls of the limiting grooves above the third sacrificial layer;

the support block includes: a first dielectric layer 101A of the first interlayer, a first dielectric layer 101B of the second interlayer, and a third dielectric layer 101C.

Referring to fig. 28, after bonding the piezoelectric element 20, a sacrificial material is formed to cover the areas where the piezoelectric element 20, the third dielectric layer 101C, the fourth dielectric layer 303C, and the second sacrificial layer are exposed. Removing the sacrificial material above the fourth dielectric layer 303C, above the third dielectric layer 101C and above the fixed end of the piezoelectric element 20, forming a dielectric film above the exposed fourth dielectric layer 303C, above the third dielectric layer 101C and above the fixed end of the piezoelectric element 20 and above the area where the sacrificial material is not removed, etching the dielectric film, and leaving the dielectric film above the fourth dielectric layer 303C and above the third dielectric layer 101C, wherein the dielectric film above the fourth dielectric layer 303C is defined as the fifth dielectric layer 303D as an upper portion of the side wall of the limiting groove. The dielectric film above the third dielectric layer 101C is defined as the lower eighth dielectric layer 101D-1 and the sacrificial material that is not removed above the second sacrificial layer is the third sacrificial layer.

Referring to fig. 29, a dielectric thin film (first dielectric material) is formed to cover the third sacrificial layer, the fifth dielectric layer 303D, and the lower eighth dielectric layer 101D-1. Etching the dielectric film, reserving the dielectric film above the area opposite to the second dielectric layer 303B of the second interlayer, defining a sixth dielectric layer 303E, reserving the dielectric film above the lower eighth dielectric layer as the top wall of the limiting groove, defining an upper eighth dielectric layer 101D-2, and forming an integral eighth dielectric layer by the upper eighth dielectric layer 101D-2 and the lower eighth dielectric layer 101D-1.

The supporting block includes: first dielectric layer 101A of the first intermediate layer, first dielectric layer 101B of the second intermediate layer, third dielectric layer 101C, and eighth dielectric layer 101D. In another embodiment, the eighth dielectric layer may not be formed, and the support block includes: a first dielectric layer 101A of the first interlayer, a first dielectric layer 101B of the second interlayer, and a third dielectric layer 101C.

In this embodiment, the supporting block 10 is annular and surrounds the piezoelectric element 20 and the limiting groove 30. A supporting block 10 is provided in an extending direction from a fixed end to a movable end of the piezoelectric element 20, and a certain gap is provided between the supporting block 10 and the limiting groove 30, and referring to fig. 29, a gap is provided between the supporting block and the limiting groove 30 in a broken line portion to ensure that the limiting groove 30 can move up and down. In another embodiment, referring to fig. 14, the supporting block 10 is rectangular, and the limiting groove 30 is not provided in a direction opposite to the fixed end of the piezoelectric element 20. The lateral movement limiter is a first upper cover 105 with a first opening 106.

Referring to fig. 30 to 32, steps S03 and S04 are performed to form a connection arm 50 connected to the limit groove 30 on the surface of the limit groove 30. A side wall 43 and an upper cover 42 on the side wall 43 are formed on the support block 10, the upper cover 42 is provided with an opening 41, and the connection arm 50 protrudes from the opening 41.

Specifically, in the present embodiment, the method for forming the connecting arm 50 connected to the limiting groove 30 on the surface of the limiting groove 30 and forming the side wall 43 and the upper cover 42 on the side wall 43 on the supporting block 10 includes: referring to fig. 30, the substrate 200 is etched according to a set thickness, which is the difference between the height of the substrate 200 and the height of the sidewall 43. The area where the connecting arm 50 is preformed is left unetched to form the upper half 50A of the connecting arm 50. Referring to fig. 31, etching of the remaining portion of the substrate 200 continues, forming the lower half 50B of the connecting arm 50 and the sidewall 43. In this embodiment, the bottom wall of the limiting groove is provided with a protruding portion (the second dielectric layer 303A of the first intermediate layer), and the connection arm 50 is connected to the protruding portion of the bottom wall of the limiting groove. The side wall 43 is connected to the support block 10, and the shape of the side wall 43 may be the same as that of the support block 10, or may be located only in a partial region of the support block 10, and in this embodiment, the side wall 43 is annular like the support block 10. Referring to fig. 32, after the connection arm 50 and the side wall 43 are formed, the upper cover 42 provided with the opening 41 is prepared, and the upper cover 42 is bonded to the side wall 43 so that the connection arm 50 passes through the opening 41. The method of bonding the upper cover 42 includes thermocompression bonding, structural adhesive bonding, or dry film bonding.

In other embodiments, the connection arm 50 connected to the limit groove 30 is formed on the surface of the limit groove 30.

The following four methods of forming the side wall 43 on the support block 10 are:

1. the substrate 200 is etched, leaving portions connected to the limit grooves or protruding portions of the limit grooves, and other portions are removed to form the connection arms 50. The side wall 43 is prepared in advance, and the side wall 43 is bonded to the support block 10 by a bonding process.

2. The substrate 200 is etched, leaving the substrate 200 on the support block 10, and other portions are removed to form the sidewalls 43 connected to the support block 10. The connection arm 50 is prepared in advance, and the connection arm 50 is bonded to the limit groove 30.

3. The side wall 43 and the connection arm 50 are prepared in advance and may be connected to the support block 10 and the limit groove 30, respectively, by means of bonding.

4. A dielectric layer is formed on the other side of the support block 10 opposite to the substrate 200, and the sidewalls 43 and the connection arms 50 are formed by etching the dielectric layer.

It should be noted that the shape of the side wall 43 may be the same as the supporting block 10, or may be different, for example, the boundary of the side wall 43 is located at the boundary of the supporting block 10 and coincides with the boundary of the side wall 43 or is located inside the boundary of the supporting block 10.

In another embodiment, the upper cover 42 and the side wall 43 are formed as a unitary structure, and the side wall 43 and the upper cover 42 positioned on the side wall 43 are formed on the support block 10 by preparing the unitary structure in advance to directly bond the unitary structure to the support block 10. The forming method of the integral structure can be as follows: preparing a substrate, forming a dielectric film on the substrate, etching the dielectric film, forming a groove, reserving a certain thickness at the bottom of the groove for forming an upper cover 42, forming a side wall 43 by a wall body at the periphery of the groove, patterning the bottom of the groove, forming an opening 41 matched with the periphery of a connecting arm, and removing the substrate to obtain the integrated structure.

In another embodiment, referring to fig. 14 and 15, the lateral movement limiter is a first upper cover 105 with a first opening 106 formed by: after the support block is formed, a first upper cover 105 with a first opening 106 and a connecting arm 50 are provided, the connecting arm 50 is adhered to the limit groove 30, the first upper cover 105 with the first opening 106 is adhered to the support block, and the connecting arm passes through the first opening.

In another embodiment, referring to fig. 16, the lateral movement limiting member is a lateral cover plate 107 and a blocking wall 108, and is formed by: after the support blocks are formed, a transverse cover plate 107 and a blocking wall 108 are provided, the transverse cover plate 107 is adhered to the support blocks, the blocking wall 108 is fixed to the circuit board, opposite portions are arranged in front of the blocking wall 108 and the transverse cover plate 107, and the connecting arms are located between the opposite portions.

Referring to fig. 13, the lateral movement limiting members are a first wall 104A and a second wall 104B, and the forming method is as follows: the first wall 104A and the second wall 104B are prepared, and the prepared first wall 104A and second wall 104B are respectively arranged on two sides of the connecting arm 50 and fixed on the circuit board.

Referring to fig. 33, in this embodiment, after the upper cover 42 is bonded, the lower cover 80 is bonded to the other side of the support block 10 opposite to the upper cover 42, and in this embodiment, a groove is provided in the middle area of the lower cover 80, and the groove provides a space for the limiting groove 30 to move downward. In another embodiment, when the moved member does not need to move downward, the distance between the inner surface of the lower cover 80 and the limiting groove 30 is not required, and the limiting groove 30 may be located between the inner surface of the lower cover 80, and the inner surface of the lower cover 80 functions to support the limiting groove 30.

The lower cover 80 is prepared in advance and bonded to the support block 10 by means of thermocompression bonding, dry film bonding or structural adhesive bonding. The method of forming the lower cover 80 may be the same as that of the above-described integral structure (integral structure of the upper cover 42 and the side wall 43), and the step of forming the opening 41 may be omitted.

Referring to fig. 33, step S05 is performed: the element to be moved is arranged on the connecting arm 50. In this embodiment, the two intermediate structures are symmetrically arranged, each intermediate structure includes an annular supporting block, the moved element 60 is disposed on the upper surfaces of the two supporting arms 50, and the two supporting arms 50 are symmetrically arranged relative to the moved element. The method further includes adhering an adhesive support member 70 to the connection arm 50 before the moved member is disposed on the connection arm 50, adhering the moved member to the connection arm 50 through the adhesive support member 70, and the adhesive support member 70 is used for supporting and connecting the moved member 60.

In another embodiment, the step of forming the intermediate structure includes: two intermediate layers are formed on the substrate 200 from bottom to top, the method being as described above. Referring to fig. 34, a dielectric thin film is formed on the upper surface of the second intermediate layer, the dielectric thin film is patterned, and a third dielectric layer 101C is formed on the first dielectric layer 101B of the second intermediate layer. And forming a sacrificial material, covering the third dielectric layers 101C and the area between the third dielectric layers 101C, performing a planarization process on the sacrificial material, removing the sacrificial material above the third dielectric layers, and forming a second sacrificial layer by the sacrificial material between the third dielectric layers. The fixed end of the piezoelectric element 20 is bonded to the third dielectric layer 101C, and the movable end of the piezoelectric element 20 is located above the second sacrificial layer. Referring to fig. 35, a sacrificial material is formed to cover the third dielectric layer 101C, the upper surface of the piezoelectric element 20, and the second sacrificial layer, wherein the sacrificial material located above the area surrounded by the third dielectric layer 101C is the third sacrificial layer. And defining the region where the side wall of the limit groove is positioned as a third region, and removing the third sacrificial layer and the second sacrificial layer in the third region to expose the second dielectric layer 303B of the second intermediate layer. And forming a dielectric film, covering the exposed second dielectric layer 303B and the exposed third sacrificial layer of the second interlayer, carrying out a planarization process on the dielectric film, reserving the dielectric film of the third area as a seventh dielectric layer 303F, and enabling the top surface of the seventh dielectric layer 303F to be flush with the top surface of the third sacrificial layer. The seventh dielectric layer 303F serves as a limiting groove sidewall. A dielectric film (second dielectric material) is formed on the seventh dielectric layer 303F and on the third sacrificial layer, the dielectric film is patterned, and the dielectric film above the area opposite to the second dielectric layer 303B of the second intermediate layer remains as the sixth dielectric layer 303E and as the top wall of the limiting groove.

The imaging module structure for limiting the lateral movement of the moved element is manufactured by the method provided by the embodiment of the invention, the forming modes of the lateral movement limiting piece and the connecting arm are flexible and various, the supporting part and the connecting arm can be formed by etching the substrate, and the method is simple. The transverse moving limiting piece, the supporting block and the lower sealing cover can also form a relatively sealed space to prevent the pollution of external environment.

It should be noted that, in the present specification, each embodiment is described in a related manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment is mainly described in a different point from other embodiments. In particular, for structural embodiments, since they are substantially similar to method embodiments, the description is relatively simple, and reference is made to the description of method embodiments for relevant points.

The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.

Claims

1. An imaging module, comprising:

the movable element is suspended above the space;

the piezoelectric elements comprise movable ends and fixed ends, the fixed ends are fixed on the supporting blocks, and the movable ends are at least partially positioned in the limiting grooves;

a lateral movement limiter comprising: the first side wall and the second side wall are positioned at two sides of the connecting arm and are distributed along the radial direction parallel to the moved element;

the external signal connection end is electrically connected with the electrode in the piezoelectric element, and the movable end drives the moved element to move upwards or downwards through the connection arm when the piezoelectric element is in an electrified state;

the number of the supporting blocks is one, and the supporting blocks are annular and comprise an inner annular space and an outer annular space, wherein the inner annular space is the space; or the number of the supporting blocks is more than two, each supporting block is annular, and the supporting blocks are symmetrically distributed on the periphery of the moved element;

The piezoelectric elements on the supporting block are symmetrically distributed on the periphery of the moved element;

the lateral movement limiting piece comprises a second upper cover with a second opening and a supporting part for supporting the second upper cover, the connecting arm penetrates through the second opening, and the side wall of the second opening for limiting the lateral movement of the connecting arm is respectively used as the first side wall and the second side wall;

the supporting component is positioned on the upper surface of the supporting block, the supporting component is annular, and the second upper cover covers the area surrounded by the supporting component;

the lower sealing cover is annular and is connected to the lower surface of the supporting block; the second upper cover, the supporting component, the supporting block and the lower sealing cover enclose a closed space.

2. The imaging module of claim 1, wherein the lower cover is provided with a recess that provides a movement space for the limit slot.

3. The imaging module of claim 1, wherein the lateral movement limiter comprises a lateral cover plate and a blocking wall respectively located on two sides of the connecting arm, the connecting arm can be accommodated between the blocking wall and an end face of the lateral cover plate, and the end face of the lateral cover plate and the blocking wall respectively serve as the first side wall and the second side wall.

4. The imaging module of claim 3, wherein the lateral cover plate is located above the support block and the blocking wall is located above a surface of the support block or inside the support block.

5. The imaging module of claim 1, wherein the lateral movement limiting member is located inside a space surrounded by the supporting block, and is a first wall and a second wall which are set up oppositely, and the first wall and the second wall are respectively used as a first side wall and a second side wall.

6. The imaging module of claim 1, wherein the connecting arm comprises a vertical wall.

7. The imaging module of claim 1, further comprising a support member positioned on a lower surface of the moved member and extending circumferentially of the moved member, the connecting arm being connected to the support member.

8. A method of manufacturing an imaging module, the imaging module comprising a moved element, the moved element comprising: a lens group, an imaging sensing element, an aperture or a lens sheet, the method comprising:

providing a substrate;

forming a side wall and an upper cover positioned on the side wall on the supporting block, wherein the upper cover is provided with an opening, and the connecting arm extends out of the opening; the supporting block is annular, and the side wall is annular;

disposing the moved element on the connecting arm;

removing the sacrificial layer before or after disposing the moved element on the connection arm;

and before or after the sacrificial layer is removed, providing a lower sealing cover, bonding the lower sealing cover on the surface of the supporting block opposite to the upper cover, and enclosing the upper cover, the side wall, the supporting block and the lower sealing cover into a containing space, wherein the piezoelectric element and the limiting groove are positioned in the containing space.

9. The method of manufacturing an imaging module according to claim 8, wherein the stopper groove bottom wall has a portion flush with a surface of the supporting block, and forming the connecting arm includes:

and patterning the substrate to form a connecting arm which is positioned on the limiting groove and connected with the limiting groove.

10. The method of manufacturing an imaging module of claim 8, wherein forming the connecting arm comprises:

And preparing the connecting arm in advance, and adhering the connecting arm to the limiting groove.

11. The method of manufacturing an imaging module according to claim 8, wherein forming a sidewall on the supporting block, an upper cover on the sidewall, comprises:

patterning the substrate to form sidewalls on the support blocks;

the upper cover is bonded to the side wall.

12. The method of manufacturing an imaging module according to claim 8, wherein a connecting arm connecting the limiting groove is formed on a surface of the limiting groove; forming a side wall on the support block, an upper cover on the side wall comprising:

first patterning the substrate to form an upper portion of the connecting arm;

after the first patterning, performing second patterning on the substrate to form the lower part of the connecting arm and the side wall; the area between the side wall and the connecting arm exposes the intermediate structure;

the upper cover is bonded to the side wall.

13. The method of manufacturing an imaging module according to claim 8, wherein forming a sidewall on the supporting block, an upper cover on the sidewall, comprises:

The side wall and the upper cover are integrated, and the side wall is bonded to the supporting block.

14. The method of manufacturing an imaging module of claim 8, wherein forming the sidewall comprises: and forming a dielectric layer on the other side of the supporting block opposite to the substrate, and etching the dielectric layer to form the side wall.

15. The method for manufacturing an imaging module according to claim 8, wherein the region where the supporting block is located is a first region, and the region where the limiting groove is located is a second region;

forming the intermediate structure includes:

forming two intermediate layers on the substrate from bottom to top, each intermediate layer comprising: the first medium layer is positioned in the first area, the second medium layer is positioned in the second area, and the first sacrificial layer is positioned between the first medium layer and the second medium layer; the second dielectric layer is used as the bottom wall of the limit groove;

forming a third dielectric layer on the first dielectric layer, and a second sacrificial layer positioned between the third dielectric layers;

bonding a fixed end of a piezoelectric element to the third dielectric layer, wherein a movable end of the piezoelectric element is positioned above the second dielectric layer;

Forming a third sacrificial layer and side walls of the limiting grooves in the second sacrificial layer and the third sacrificial layer, and a top wall of the limiting groove above the third sacrificial layer;

the support block includes: a first dielectric layer and a third dielectric layer.

16. The method of claim 15, wherein forming a third sacrificial layer and forming sidewalls of the limiting groove in the second sacrificial layer and the third sacrificial layer, and forming a top wall of the limiting groove over the third sacrificial layer comprises:

defining a third area as an area for forming the side wall of the limit groove, removing the second sacrificial layer of the third area, and forming a fourth dielectric layer in the third area;

forming a third sacrificial layer between the third dielectric layers, removing the third sacrificial layer above the fourth dielectric layer, and forming a fifth dielectric layer above the fourth dielectric layer; the fourth dielectric layer and the fifth dielectric layer form the side wall of the limit groove;

and forming a first dielectric material on the third sacrificial layer and the fifth dielectric layer, and patterning the first dielectric material to form a sixth dielectric layer serving as the top wall of the limit groove.

17. The method of claim 15, wherein forming a third sacrificial layer and forming sidewalls of the limiting groove in the second sacrificial layer and the third sacrificial layer, and forming a top wall of the limiting groove over the third sacrificial layer comprises:

forming a third sacrificial layer to cover the third dielectric layer and the area between the third dielectric layers;

defining a third region as a region for forming the side wall of the limit groove, removing the third sacrificial layer and the second sacrificial layer of the third region, and forming a seventh dielectric layer in the third region as the side wall of the limit groove;

and forming a second dielectric material on the third sacrificial layer and the seventh dielectric layer, and patterning the second dielectric material to form a sixth dielectric layer serving as the top wall of the limit groove.

18. The method of manufacturing an imaging module of claim 15, further comprising: forming an eighth dielectric layer over a surface of the third dielectric layer, the support block comprising: the first dielectric layer, the third dielectric layer and the eighth dielectric layer.

19. The method of manufacturing an imaging module according to claim 8, wherein disposing the moved member on the connecting arm includes: and forming a supporting element on the upper surface of the connecting arm, forming an adhesive layer on the upper surface of the supporting element, and adhering the moved element to the supporting element through the adhesive layer.