CN112864794A

CN112864794A - Laser equipment and control method thereof

Info

Publication number: CN112864794A
Application number: CN202110079547.5A
Authority: CN
Inventors: 张鹏飞; 毛明明; 周特; 饶志龙; 陈晓迟
Original assignee: Vertilite Co Ltd
Current assignee: Vertilite Co Ltd
Priority date: 2021-01-21
Filing date: 2021-01-21
Publication date: 2021-05-28
Anticipated expiration: 2041-01-21
Also published as: CN112864794B

Abstract

The invention provides a laser device and a control method thereof, comprising the following steps: a first substrate; the laser array is arranged on the first substrate, and the first fixing hole surrounds the laser array, wherein the laser array at least comprises a plurality of first lasers and a plurality of second lasers, and the first lasers and the second lasers are independent of each other; the second substrate is arranged on the first substrate and comprises a first step part and a second step part, the width of the first step part is larger than that of the second step part, the first step part and the second step part are connected through a through hole, and the first step part is in contact with the laser array; an optical element comprising a lens array and a diffuser array, the lens array being located on the second laser and the diffuser array being located on the first laser. The laser equipment provided by the invention can be used for detecting objects at different distances.

Description

Laser equipment and control method thereof

Technical Field

The invention relates to the technical field of laser, in particular to laser equipment and a control method thereof.

Background

Laser radar can be used in fields such as unmanned car, robot, through the signal of transmitting infrared ray signal and receiving infrared ray at the measured object surface reflection, measures the distance of measured object.

The laser radar is a radar system which emits laser beams to detect the position, speed and other characteristic quantities of a target, and the working principle of the radar system is that the detection laser beams are emitted to the target, then received signals reflected from the target are compared with the emitted signals, and after appropriate processing is carried out, relevant information of the target, such as target distance, direction, height, speed, attitude, even shape and other parameters, can be obtained.

The existing laser radar generally comprises a light source, an optical receiver and an information processing system, and the existing laser radar is complex in processing and preparation process and high in cost. Moreover, the existing laser radar can only realize the detection of a specific distance, and cannot realize the detection of a long distance and a short distance simultaneously in a set of system or the same device.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, the present invention provides a laser device and a control method thereof, which can simultaneously detect objects at different distances and have good light emitting efficiency and heat dissipation effect.

To achieve the above object, the present invention provides a laser apparatus including:

the first substrate comprises a plurality of first fixing holes, wherein the first fixing holes comprise insulating layers;

the laser array is arranged on the first substrate, and the first fixing hole surrounds the laser array, wherein the laser array at least comprises a plurality of first lasers and a plurality of second lasers, and the first lasers and the second lasers are independent of each other;

the second substrate is arranged on the first substrate and comprises a first step part and a second step part, the width of the first step part is larger than that of the second step part, the first step part and the second step part are connected through a through hole, and the first step part is in contact with the laser array;

an optical element comprising a lens array and a diffuser array, the lens array being located on the second laser and the diffuser array being located on the first laser;

the power density of the first laser is smaller than that of the second laser, the divergence angle of the laser beam emitted by the second laser after passing through the lens array is smaller than that of the laser beam emitted by the first laser, and the detection distance of the first laser is smaller than that of the second laser.

Further, the optical element is provided on the second stepped portion or directly on the laser.

Further, the laser array further comprises a plurality of connection regions, and the connection regions are located on two sides of the first laser and the second laser.

Further, the light emitting holes of the first laser comprise rectangular light emitting holes, and the ratio of the short sides to the long sides of the rectangular light emitting holes is less than or equal to 1/4.

Further, the second substrate includes a plurality of second fixing holes corresponding to the first fixing holes.

Further, the first stepped portion includes a plurality of pad regions thereon, and the pad regions correspond to the connection regions.

Further, the fixing device also comprises a plurality of pins, and the pins are arranged in the first fixing hole and the second fixing hole.

Further, a plurality of connecting lines are arranged in the second substrate, and the connecting lines are used for connecting the pin and the pad area.

Further, the first laser and the second laser comprise multijunction vertical cavity surface emitting lasers.

Further, the negative electrode on the back surface of the laser array is connected with the first substrate, and the positive electrode on the front surface of the laser array is connected with the connecting area.

Further, the negative electrode and the positive electrode of the laser array are connected with the first substrate, and the positive electrode and the negative electrode are located on the same side of the laser array.

Further, the area of the light emitting hole of the first laser is larger than that of the light emitting hole of the second laser.

Further, the present invention also provides a method for controlling a laser device, including:

providing a laser device, wherein the laser device comprises:

the power density of the first laser is smaller than that of the second laser, and the divergence angle of the laser beam emitted by the second laser after passing through the lens array is smaller than that of the laser beam emitted by the first laser;

exciting a plurality of second lasers to form a first laser beam, and forming a second laser beam after the first laser beam is reflected by the object;

receiving the second laser beam through a sensor, and judging whether the photon energy of the second laser beam is greater than a threshold value;

if so, exciting the first laser and closing the second laser;

if not, sequentially exciting the first laser and other second lasers, wherein the distance detected by the first laser is smaller than that detected by the second laser, and when the distance detected by the second laser is larger than a preset value, closing the first laser.

In summary, the present invention provides a laser apparatus and a control method thereof, the laser apparatus includes a laser array, the laser array includes a plurality of first lasers and a plurality of second lasers, a diffuser is disposed on the first lasers, a lens is disposed on the second lasers, a power density of the first lasers is smaller than a power density of the second lasers, and an area of light emitting holes of the first lasers is larger than an area of light emitting holes of the second lasers. Because the area of the light emitting hole of the first laser is large, the emitted laser modes can be contained, the distance between different emission modes is large, and the length-width ratio of the light emitting hole is designed, so that the laser beam with a large divergence angle can be obtained, and the precision of short-distance detection can be improved. By providing a diffuser or a cylindrical mirror on the first laser, the field of view in the far field can be further increased. Because the area of the light emitting hole of the second laser is smaller, the modes capable of accommodating the emitted laser are fewer, and the space between different emission models is smaller, the formed divergence angle is smaller, and after the light emitting hole is collimated by the lens, the divergence angle can be further reduced, so that the energy density of the laser beam is higher, and the remote detection is realized; the invention forms a first laser with small power and large divergence angle and a second laser with large power and small divergence angle, wherein the first laser is used for detecting objects at a short distance, and the second laser is used for detecting objects at a long distance, so that the laser device can simultaneously detect the objects at different distances.

In summary, the laser array is disposed between the first substrate and the second substrate, the first substrate includes a copper substrate, the second substrate includes a ceramic substrate, and heat generated by the laser array can be directly and rapidly conducted out of the first substrate; the second substrate has low dielectric constant and dielectric loss, and is favorable for low-loss propagation of electric signals under the nanosecond pulse width condition required by laser equipment, and the second substrate has high thermal conductivity, so that the heat dissipation of the laser equipment is facilitated.

Drawings

FIG. 1: the structure of the laser equipment is shown schematically.

FIG. 2: the invention is a top view of a first substrate.

FIG. 3: the first laser in the invention has a structure schematic diagram.

FIG. 4: a top view of the second substrate of the present invention.

FIG. 5: the second substrate of the present invention is a cross-sectional view.

FIG. 6: the second substrate of the present invention is viewed from below.

FIG. 7: the invention relates to a control method flow chart of laser equipment.

FIG. 8: in the present invention, the structure of the second light-emitting region is excited.

FIG. 9: the structure of the first light-emitting region is excited in the invention.

FIG. 10: the structure of the first light-emitting area, the second light-emitting area, the third light-emitting area and the fourth light-emitting area is excited.

FIG. 11: the structure schematic diagram of the second light-emitting region and the fourth light-emitting region is excited in the invention.

FIG. 12: another top view of the laser array of the present invention.

FIG. 13: another cross-sectional view of the laser array of the present invention.

FIG. 14: another cross-sectional view of the laser array of the present invention.

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.

As shown in fig. 1, the present embodiment proposes a laser apparatus 10, the laser apparatus 10 including a first substrate 100, a second substrate 200, and a laser array 300. The laser array 300 is disposed between the first substrate 100 and the second substrate 200. The laser array 300 includes a plurality of lasers having different power densities.

As shown in fig. 2, in the embodiment, the first substrate 100 is used to carry the laser array 300, the first substrate 100 is, for example, a copper clad composite substrate, and a peripheral circuit, for example, a positive electrode or a negative electrode connected to the back surface of the laser array 300, may be disposed on the first substrate 100; the peripheral circuit in this embodiment may be used to connect the cathode. In the present embodiment, the first substrate 100 has good thermal conductivity, so that heat generated by the laser array 300 can be quickly conducted away, and the laser array 300 is ensured to operate under a low temperature condition.

As shown in fig. 2, in the present embodiment, a plurality of first fixing holes 101 are further provided on the first substrate 100, and the first fixing holes 101 surround the laser array 300. An insulating layer is further arranged in the first fixing hole 101, the first fixing hole 101 is used for placing a pin, and the pin can be connected to the PCB substrate. Since the pin is made of a metal material, the pin can be insulated from the first substrate 101 by an insulating layer.

In some embodiments, in order to further increase the heat dissipation efficiency of the first substrate 101, a cooling water pipe may be further disposed in the first substrate 101, and cooling water is introduced into the cooling water pipe, so that the heat dissipation efficiency of the first substrate 101 may be further improved.

As shown in fig. 2, in the present embodiment, a laser array 300 is disposed on the first substrate 100, the laser array 300 includes, for example, a plurality of first lasers 301 and a plurality of second lasers 302, and the first lasers 301 and the second lasers 302 are independent from each other, that is, the laser array 300 includes a plurality of lasers that are independently addressable. The power density of the first laser 301 is for example smaller than the power density of the second laser 302. The area of the light emitting hole of the first laser 301 is larger than that of the light emitting hole of the second laser 302. In the present embodiment, a plurality of second lasers 302 may be defined as one laser group 3021, for example, eight second lasers 302 per row in fig. 4 may be defined as one laser group 3021. Note that the area of the light emitting holes of the laser group 3021 is smaller than the area of the light emitting holes of the first laser 301. In the present embodiment, three laser groups 3021 are also defined as laser modules, for example, and the laser modules are spaced from the first laser 302. It should be noted that when the second laser 302 is excited, one laser group 3021 may be excited. In some embodiments, one laser group 3021 may also be located in the same laser.

As shown in fig. 2, in the present embodiment, the light emitting hole of the first laser 301 is, for example, a rectangular light emitting hole, and can emit a rectangular light spot, a ratio of a short side to a long side of the rectangular light emitting hole is equal to or less than 1/4, a divergence angle of a laser beam emitted by the first laser 301 is large, and the first laser 301 is, for example, used for detecting an object at a short distance. The light emitting aperture of the second laser 302 is, for example, circular, and can emit a symmetrical circular light spot, the divergence angle of the laser beam emitted by the second laser 302 is small, and the second laser 302 is, for example, used for detecting a distant object. It should be noted that the short distance is, for example, less than 10 meters, and the long distance is, for example, greater than 20 meters. The first laser 301 and the second laser 302 are, for example, multijunction vertical cavity surface emitting lasers, which are vertical cavity surface emitting lasers including a plurality of active regions, and since there are a plurality of vertically stacked active regions, it is possible to achieve output of a higher power density under the same current condition.

As shown in fig. 2, in the embodiment, the laser array 300 further includes a plurality of connection regions 303, the connection regions 303 are disposed on two sides of the first laser 301 and the second laser 302, for example, the connection regions 303 are disposed on two sides of the first laser 301, the connection regions 303 are disposed on two sides of the laser groups 3021, the number of the connection regions 303 is twice the sum of the numbers of the first laser 301 and the laser groups 3021, that is, one connection region 303 is disposed on each of the first laser 301 and each of the laser groups 3021, so as to satisfy the purpose of independently addressing the first laser 301 and each of the laser groups 3021. The connection region 303 is used for connecting a second substrate.

As shown in fig. 2, in the present embodiment, the light emitting area of the laser device may also be divided, for example, the light emitting area of the uppermost first laser 301 is defined as a first light emitting area, the light emitting area of the laser group 3021 is defined as a second light emitting area, and so on.

As shown in fig. 3, the structure of the vcsel is illustrated by taking the first laser 301 as an example in the present embodiment, and the first laser 301 includes a substrate 311, a first reflective layer 312, an active layer 313, and a second reflective layer 314. It should be noted that the first laser 301 and the second laser 302 may be in a front emission structure.

As shown in fig. 3, in the present embodiment, the first reflective layer 312 is located on the substrate 311, the active layer 313 is located on the first reflective layer 312, and the second reflective layer 314 is located on the active layer 313. The substrate 311 may be any material suitable for forming a vertical cavity surface emitting laser, such as gallium arsenide (GaAs). The substrate 311 may be an N-type doped semiconductor substrate, or a P-type doped semiconductor substrate, and the doping may reduce the contact resistance of the ohmic contact between the subsequently formed electrode and the semiconductor substrate. The first reflective layer 312 may be formed of, for example, a stack of two materials having different refractive indexes, including AlGaAs and GaAs, or AlGaAs of a high aluminum composition and AlGaAs of a low aluminum composition, the first reflective layer 312 may be an N-type mirror, and the first reflective layer 312 may be an N-type bragg mirror. The second reflective layer 314 may include a stack of two materials having different refractive indexes, i.e., AlGaAs and GaAs, or AlGaAs of a high aluminum composition and AlGaAs of a low aluminum composition, and the second reflective layer 314 may be a P-type mirror and the second reflective layer 314 may be a P-type bragg mirror. The first reflective layer 312 and the second reflective layer 314 serve to enhance the reflection of light generated from the active layer 313 and then exit from the surface of the second reflective layer 314.

As shown in fig. 3, in this embodiment, the active layer 313 includes at least three active regions, a tunnel junction is disposed between two adjacent active regions, the absorption loss of photons can be reduced by using an ultra-thin tunnel junction, and the tunnel junction can be placed at a standing wave node of an optical resonant cavity of the vcsel, so that the interaction between the tunnel junction and an optical field can be reduced, and the loss can also be reduced. In this embodiment, the tunnel junction is located between the active regions, so that the plurality of active regions form a series structure, and carriers can be reused, thereby improving the light intensity of each vcsel without increasing the current, i.e., improving the power of the vcsel.

As shown in fig. 3, in the present embodiment, a connection region 303 is further formed on the second reflective layer 314, the connection region 303 is located at two sides of the light emitting region, and the material of the connection region 303 is, for example, gold or nickel. A metal layer 315 is further deposited on the connection region 303 by an electroplating method, the metal layer 315 is made of, for example, tin, when the connection region 303 is connected to a pad of the second substrate 200, the metal layer 315 can reduce alignment difficulty between the laser array 300 and the pad of the second substrate 200 by eutectic reaction, and meanwhile, the laser array 300 is welded on the second substrate, so that package inductance caused by wire bonding can be effectively avoided, low-loss propagation of an electrical signal of the laser device under a nanosecond pulse width condition is reduced, and performance of the laser device is effectively improved.

As shown in fig. 1 and 4, fig. 4 is a top view of the second substrate 200. The second substrate 200 is positioned on the first substrate 100, and the laser array 300 is positioned between the first substrate 100 and the second substrate 200. An optical element 400 is also disposed on the second substrate 200, the optical element 400 being positioned directly above the laser array 300, the optical element 400 including a lens array and a diffuser array. The optical element 400 is provided on the second stepped portion 203, for example. The optical element 400 includes a plurality of collimating lenses 401 and a plurality of diffusers 402, the collimating lenses 401 being located on the second laser 302, and the collimating lenses 401 being capable of collimating the laser beams emitted by the second laser 302. After the laser beam emitted by the second laser 302 passes through the collimating lens 401, the spot diameter and the divergence angle of the laser beam are smaller, so that the laser beam emitted by the second laser 302 can meet the detection of a longer distance. The diffuser 402 is located on the first laser 301, and the diffuser 402 can increase the emission angle of the first laser 301, so that a laser beam with a large divergence angle can be obtained, and the accuracy of close-range detection can be improved.

As shown in fig. 4, the diffuser array is located on the first lasers 301, and the lens array is located between the first lasers 301 and directly above the second laser 302. Since the area of the light emitting hole of the first laser 301 is large, the number of modes capable of accommodating emitted laser light is large, the distance between different emission modes is large, and by designing the length-width ratio of the light emitting hole, a laser beam with a large divergence angle can be obtained, so that the precision of short-distance detection can be improved. By providing a diffuser or a cylindrical mirror on the first laser 301, the field of view in the far field can be further increased. Because the area of the light emitting hole of the second laser 301 is smaller, the modes capable of accommodating the emitted laser are fewer, and the space between different emission models is smaller, the formed divergence angle is smaller, and after the light emitting hole is collimated by the lens, the divergence angle can be further reduced and the diameter of a far-field light spot can be reduced, so that the energy density of the laser beam is higher, and the remote detection is realized; that is to say, the embodiment forms the first laser 301 with small power and large divergence angle, and the second laser 302 with large power and small divergence angle, the first laser 301 is used for detecting the object at a short distance, and the second laser 302 is used for detecting the object at a long distance, so that the laser device can simultaneously realize the detection of the objects at different distances.

In this embodiment, the second substrate 200 is, for example, a ceramic substrate, such as an AlN multilayer ceramic substrate, which has a large dielectric constant and a low dielectric loss, and is favorable for satisfying the low-loss propagation of the electrical signal under the nanosecond pulse width condition required by the laser device. Meanwhile, the AlN multilayer ceramic substrate has very high thermal conductivity, so that heat generated by the laser array 300 in the light emitting process can be led out in time, and the laser array 300 can work at a lower temperature.

As shown in fig. 1, 2 and 4, in the present embodiment, the second substrate 200 further includes a plurality of second fixing holes 201, the second fixing holes 201 are located outside the optical element 400, the second fixing holes 201 correspond to the first fixing holes 101, and the first substrate 100 and the second substrate 200 are fixed by disposing pins 500 in the first fixing holes 101 and the second fixing holes 201. In this embodiment, the pin 500 is a metal material. The pin 500 may be connected to external circuitry, such as to a PCB substrate. In this embodiment, the first fixing hole 101 has an insulating layer therein, so that the pin 500 can be insulated from the first substrate 100. Since the second substrate 200 is an insulating substrate, an insulating layer is not required to be disposed in the second fixing hole 201.

As shown in fig. 4 to 6, fig. 5 is a cross-sectional view of the second substrate 200, and fig. 6 is a bottom view of the second substrate 200, the lower surface of the second substrate 200 includes a first step portion 202, the upper surface of the second substrate 200 includes a second step portion 203, the first step portion 202 and the second step portion 203 are connected by a through hole, and the width of the first step portion 202 is greater than the width of the second step portion 203. The first step part 202 may form a first step cavity, and the second step part 203 may form a second step cavity, the width d1 of the first step cavity being greater than the width d2 of the second step cavity. In an embodiment, a plurality of pad regions 204 are disposed on the first stepped portion 202, and the pad regions 204 correspond to the connection regions 303 on the laser array 300. The pad region 204 is fixed to the connection region 303 by welding, and since the connection region 303 has the metal layer 315, the metal layer 315 can achieve welding and fixing of the connection region 303 and the pad region 204 through eutectic reaction, thereby achieving connection between the laser array 300 and a peripheral circuit. In the present embodiment, the second stepped portion 203 is used for carrying the optical element 400.

As shown in fig. 1 and 6, in the present embodiment, the second substrate 200 is a ceramic substrate, and a connection line (not shown) is disposed in the second substrate 200, and connects the pad region 204 and the pin 500. In the present embodiment, the number of pad regions 204 is equal to the number of pins 500, so that connecting lines can connect the pad regions 204 and the pins 500 of each row, and therefore mutual independence of the first laser 301 and the laser group 3021, and therefore mutual independence of the first light-emitting region and the second light-emitting region can be achieved.

As shown in fig. 1, in the present embodiment, the first substrate 100 is a copper substrate, the negative electrode of the back surface of the laser array 300 can be connected to the peripheral circuit on the first substrate 100, the positive electrode of the front surface of the laser array 300 is connected to the pad region of the second substrate 300 through the connection region, and the connection line is provided in the second substrate 200 and connects the pad region to the pin 500, so that the positive electrode on the second substrate 200 can be connected to the external circuit. In the present embodiment, the pin 500 can achieve alignment installation of the entire laser apparatus 10, has a simple structure, and can conveniently achieve installation with an external device.

It should be noted that the laser device 10 may also include other devices such as sensors, controllers, and the like.

As shown in fig. 12, the laser array 300 in this embodiment may also be a back-emitting laser, and the laser array 300 in fig. 12 is different from the laser array in fig. 3 in that the middle of the laser array 300 in fig. 12 includes a connection region.

As shown in fig. 13, in the present embodiment, the structure of the first laser 301 is described by taking the first laser 301 as an example, and the first laser 301 is a back emission structure. The first laser 301 comprises a substrate 311, a second reflective layer 314, an active layer 313 and a first reflective layer 312. The substrate 311 is a P-type substrate, the second reflective layer 314 is a P-type reflective layer, the first reflective layer 312 is an N-type reflective layer, and the active layer 313 may include a plurality of active regions 3131. The description of the substrate 311, the second reflective layer 314, the active layer 313, and the first reflective layer 312 may refer to the above description.

As shown in fig. 13, in the present embodiment, the active layer 313 and the first reflective layer 312 form a plurality of mesa structures, which may be used to form light emitting holes. A first electrode 316 is disposed on the second reflective layer 314 and a second electrode 317 is disposed on the mesa structure. The first electrode 316 may be a positive electrode and the second electrode 317 may be a negative electrode. The first electrode 316 and the second electrode 317 are located on the same side of the substrate 311, and the first electrode 316 and the second electrode 317 may be respectively connected to the first substrate 100, and the first electrode 316 and the second electrode 317 are insulated from each other.

As shown in fig. 14, the present embodiment also proposes another back emission structure, which is different from that in fig. 13 in that: a diffuser 319 is disposed on the substrate 311, and the diffuser 319 is formed on the substrate 311 by the connection material 318. The diffuser 319 and mesa structure are located on different sides of the substrate 311. In fig. 14, the diffuser 319 is directly provided on the laser, so that the light-emitting distance of the laser beam can be extended, the divergence angle of the laser beam can be enlarged, and the manufacturing process of the laser device can be simplified. Of course, the diffuser 319 may also be replaced by a cylindrical mirror or a lens.

As shown in fig. 7, the present embodiment provides a method for controlling a laser device, including:

s1: providing a laser device;

s2: exciting a plurality of second lasers (one laser group) to form a first laser beam, and forming a second laser beam after the first laser beam is reflected by the object;

s3: receiving the second laser beam through a sensor, and judging whether the photon energy of the second laser beam is greater than a threshold value;

if yes, exciting the first laser, and closing the second laser;

if not, the first laser and a plurality of other second lasers (another laser group) are sequentially excited, wherein the distance detected by the first laser is smaller than that detected by the second laser, and when the distance detected by the second detector is larger than a preset value, the first laser is closed.

As shown in fig. 8, in steps S1-S3, a laser device 10 is first provided, and the specific structure of the laser device 10 can refer to fig. 1-6. The laser device 10 may include a first light emitting area 11, at least one second light emitting area 12 (only one is illustrated, but the present invention is not limited thereto), a third light emitting area 13, and at least one fourth light emitting area 14 (only one is illustrated, but the present invention is not limited thereto). The first light-emitting region 11 and the third light-emitting region 13 can be formed by lighting the first laser, and the second light-emitting region 12 and the fourth light-emitting region 14 can be formed by lighting a plurality of second lasers (one laser group). The first light emitting region 11, the second light emitting region 12, the third light emitting region 13 and the fourth light emitting region 14 are independent of each other. In this embodiment, the power density of the first laser is less than the power density of the second laser, and the divergence angle of the laser beam emitted by the first laser is greater than the divergence angle of the laser beam emitted by the second laser. The light emitting hole of the first laser is, for example, a rectangular light emitting hole, and the light emitting hole of the second laser is, for example, a circular light emitting hole. The area of the light emitting hole of the first laser is larger than that of the light emitting hole of the second laser. The laser beam emitted by the first laser is not collimated and the laser beam emitted by the second laser is collimated.

As shown in fig. 8 to 9, a plurality of second lasers (one laser group) are first excited to form the second light emitting region 12, that is, the first laser beam L1 is emitted through the second light emitting region 12, and the first laser beam L1 is reflected to form the second laser beam L2 after being irradiated on the object 15. The sensor 16 receives the second laser beam L2, determines the photon energy of the second laser beam L2, and if the photon energy of the second laser beam L2 is greater than the threshold value, that is, the sensor is overexposed, so that the object 15 can be considered to be in a close range, and thus the laser device 10 excites the first laser, that is, forms the first light-emitting region 11 or the third light-emitting region 13, and closes the second light-emitting region 12. Because the divergence angle of the laser beam emitted by the first laser is 30-40 degrees and the laser beam emitted by the first laser is not collimated, the energy density of the light spot of the laser beam emitted by the first laser is smaller than that of the second laser beam, so that the laser beam emitted by the first laser is reflected by the object 15 and then received by the sensor 16, and the sensor 16 does not generate an overexposure phenomenon, and the laser beam emitted by the first laser has a larger divergence angle, so that the short-distance detection precision can be improved. In this embodiment, the short distance is, for example, less than 10 meters.

As shown in fig. 8 and 10, in the present embodiment, after the second laser beam L2 is received by the sensor 16, and the photon energy of the second laser beam L2 is less than the threshold value, that is, the sensor 16 does not generate the over-exposure phenomenon, the laser device 10 may sequentially light the first light-emitting region 11, the third light-emitting region 13, and the fourth light-emitting region 14 according to a preset program. The detection distance of the first light emitting area 11 and the third light emitting area 13 is less than 20 meters, and when the object 15 is 10-20 meters away from the laser device, the first light emitting area 11, the second light emitting area 12, the third light emitting area 13 and the fourth light emitting area 14 can work in cooperation, namely the first laser and the second laser work in cooperation. The second light emitting area 12 and the fourth light emitting area 14 can effectively supplement partial depth information loss of the first light emitting area 11 and the third light emitting area 13 due to the long distance, which is caused by the low energy density.

As shown in fig. 8 and 11, in the present embodiment, when the second laser beam L2 is received by the sensor 16, and the photon energy of the second laser beam L2 is less than the threshold value, that is, the sensor 16 has no over-exposure phenomenon, and the distance between the object 15 and the laser device 10 is greater than a preset value, for example, greater than 20 meters, since the photon energy of the reflected beam formed after the laser beams emitted by the first light emitting region 11 and the third light emitting region 13 are reflected by the object 15 is too low, the controller may determine that the distance between the object 15 and the laser device 10 is greater than the preset value by analyzing the time period of the signal received by the sensor 16, and control the second light emitting region 12 and the fourth light emitting region 14 to close the first light emitting region 11 and the third light emitting region 13, thereby improving the usage efficiency of the device.

As shown in fig. 8-11, in the present embodiment, the different distances are determined by the direct time-of-flight to determine whether different lasers are on or off to achieve high-precision detection of the different distances. The different lasers are different from the first laser and the second laser, for example, the area of the light emitting hole of the first laser is larger than that of the light emitting hole of the second laser, and the power of the first laser is smaller than that of the second laser. The divergence angle of the laser beam emitted by the first laser is greater than the divergence angle of the laser beam emitted by the second laser. The first laser is used to detect objects at close range and the second laser is used to detect objects at far range.

As shown in fig. 1 and 7, in this embodiment, the laser device 10 may perform distance and depth measurement using direct time of flight, for example, by injecting a large amount of photons into the laser array 300 for a short time (1-5ns), the photons are propagated at the speed of light, hit the object to be measured and reflected back to be received by the sensor, and by calculating the time difference between the emitted photons and the time when the photons are received by the sensor, the distance information of the object to be measured can be obtained.

As shown in fig. 1, the laser device 10 may be used in a portable electronic device, such as a smart phone, a tablet computer, a laptop computer, or other portable electronic devices.

As shown in fig. 1, the laser device 10 may be assembled into an electronic device to change the interaction between the electronic device and a person, such as gesture control, iris unlock, and so on.

As shown in fig. 1, the laser device 10 can be applied to a video image capturing apparatus, such as a video camera, a camera, etc., so that in the later video image processing, the special effect prop can be inserted into any position in the video image through simple post processing, and in this way, on one hand, the fidelity of the special effect can be enhanced, and on the other hand, the shooting is not limited by the shooting place, and the manufacturing cost is greatly reduced.

As shown in fig. 1, the laser device 10 may be configured in a household device, such as an air conditioner, a refrigerator, a television, and the like, to change an interaction mode between a user and the household device, for example, to implement functions such as gesture control of the household device.

As shown in fig. 1, the laser device 10 may be assembled in a robot device to provide three-dimensional vision capability for the robot device, so that the robot device can achieve the functions of space positioning, path planning, obstacle avoidance, gesture manipulation, etc. to make the robot device better serve human beings, wherein the robot includes an entertainment robot, a medical robot, a home robot, a field robot, etc.

As shown in fig. 1, the laser device 10 may be incorporated into a security monitoring device, such as a monitoring device, to improve the accuracy of analysis of the security monitoring device, and to increase intelligent applications such as behavior analysis.

As shown in fig. 1, the laser device 10 may be applied to an unmanned device, such as an unmanned automobile, an unmanned plane, an unmanned ship, etc., and the laser device 10 provides a three-dimensional visual base for the unmanned device to provide technical support for unmanned driving.

The above description is only a preferred embodiment of the present application and a description of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present invention related to the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above features with (but not limited to) technical features having similar functions disclosed in the present application.

Other technical features than those described in the specification are known to those skilled in the art, and are not described herein in detail in order to highlight the innovative features of the present invention.

Claims

1. A laser apparatus, comprising:

2. Laser device as claimed in claim 1, characterized in that the optical element is arranged on the second step or directly on the laser.

3. The laser device of claim 1, wherein the laser array further comprises a plurality of connection regions, the plurality of connection regions being located on either side of the first laser and the second laser.

4. The laser device of claim 1, wherein the light emitting aperture of the first laser comprises a rectangular light emitting aperture having a ratio of short to long sides of 1/4 or less.

5. The laser apparatus of claim 1, wherein the second substrate includes a plurality of second fixing holes thereon, the second fixing holes corresponding to the first fixing holes.

6. The laser device as claimed in claim 3, wherein the first stepped portion includes a plurality of pad regions thereon, the pad regions corresponding to the connection regions.

7. The laser device of claim 1, wherein the first laser and the second laser comprise multijunction vertical cavity surface emitting lasers.

8. The laser device of claim 3, wherein a negative electrode of the back surface of the laser array is connected to the first substrate, and a positive electrode of the front surface of the laser array is connected to the connection region.

9. The laser device of claim 1, wherein a negative electrode and a positive electrode of the laser array are connected to the first substrate, the positive electrode and the negative electrode being located on a same side of the laser array.

10. The laser device of claim 1, wherein the area of the light emitting aperture of the first laser is larger than the area of the light emitting aperture of the second laser.

11. A control method of a laser apparatus, comprising:

providing a laser device, wherein the laser device comprises:

if so, exciting the first laser and closing the second laser;