CN112859525B - Photoetching correction method - Google Patents
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- CN112859525B CN112859525B CN201911179951.9A CN201911179951A CN112859525B CN 112859525 B CN112859525 B CN 112859525B CN 201911179951 A CN201911179951 A CN 201911179951A CN 112859525 B CN112859525 B CN 112859525B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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Abstract
The invention relates to a photoetching correction method, which comprises the following steps: providing a wafer to be photoetched, wherein the wafer to be photoetched is internally provided with shallow trench isolation; acquiring the actual depth of shallow trench isolation in a wafer to be photoetched; comparing the actual depth of the shallow trench isolation with the target depth to obtain a depth deviation value; and compensating the photoetching parameters according to the depth deviation amount so as to correct photoetching. The photoetching correction method can avoid the influence of the shallow trench isolation depth deviation on the photoetching precision, so that the photoetched graph structure is more accurate, the reworking times are reduced, the production efficiency is improved, and the production cost is saved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a photoetching correction method.
Background
Integrated Circuits (ICs), or microcircuits, microchips, chips, and chips, are a way to miniaturize circuits (including primarily semiconductor devices, including passive components, etc.) in electronics, and are often fabricated on the surface of semiconductor wafers. In the integrated circuit manufacturing process, a photolithography process is commonly used, and the photolithography refers to a technique of transferring a pattern on a mask onto a wafer by means of a photoresist (also called a photoresist) under the action of light. A general photolithography process includes steps of wafer surface cleaning and drying, spin-coating a photoresist, soft baking, alignment exposure, post-baking, developing, hard baking, etching, and inspection. However, the actual feature size of the patterned structure is always deviated from the target feature size, and no one has found the reason for the deviation. Therefore, a technique capable of controlling the deviation of the photolithography process is required.
Disclosure of Invention
Based on this, the present invention provides a photolithography correction method for solving the above problems.
The invention provides a photoetching correction method, which comprises the following steps: providing a wafer to be photoetched, wherein the wafer to be photoetched is internally provided with shallow trench isolation; acquiring the actual depth of the shallow trench isolation in the wafer to be photoetched; comparing the actual depth of the shallow trench isolation with the target depth to obtain a depth deviation value; and compensating the photoetching parameters according to the depth deviation amount so as to correct photoetching.
The photoetching correction method can avoid the influence of the shallow trench isolation depth deviation on the photoetching precision, so that the photoetched graph structure is more accurate, the reworking times are reduced, the production efficiency is improved, and the production cost is saved.
In one embodiment, determining the lithography parameter compensation amount according to the depth deviation amount comprises: providing a target sample wafer and a plurality of sample wafer sets, wherein the target sample wafer is provided with shallow trench isolation with a sample target depth, and each sample wafer set comprises a plurality of sample wafers with the same sample actual depth and shallow trench isolation; obtaining the actual depth of the sample of the shallow trench isolation in the sample wafers in each sample wafer set, and comparing the actual depths of a plurality of samples with the target depth of the sample to obtain a plurality of sample depth deviation values; photoetching the target sample wafer by using the actual photoetching parameters of the sample to form a target pattern structure; obtaining a sample target characteristic size of the target graph structure; randomly selecting 1 sample wafer set, carrying out photoetching on each sample wafer in the sample wafer set by using different photoetching parameters to form a graph structure, obtaining the actual characteristic size of a sample of the graph structure, selecting the actual characteristic size of the sample closest to the target characteristic size of the sample, taking the photoetching parameter corresponding to the actual characteristic size of the sample closest to the target characteristic size of the sample as the target photoetching parameter of the sample, and comparing the target photoetching parameter of the sample with the actual photoetching parameter of the sample to obtain the compensation quantity of the photoetching parameter of the sample; repeating the previous step for a plurality of times to obtain a plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities, determining the relationship between the photoetching parameter compensation quantities and the depth deviation quantities based on the obtained plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities, and then determining the photoetching parameter compensation quantities according to the depth deviation quantities.
In one embodiment, a relation between the lithography parameter compensation amount and the depth deviation amount is determined based on a plurality of obtained sample lithography parameter compensation amounts and the corresponding sample depth deviation amounts.
In one embodiment, determining the relationship between the lithography parameter compensation amount and the depth deviation amount comprises: and presetting a function relation, wherein the function relation comprises a constant variable, and the obtained a plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities are brought into the function relation to determine the constant variable so as to determine the relation between the photoetching parameter compensation quantities and the depth deviation quantities.
In one embodiment, the target depth determination method includes: providing a plurality of sample wafers, wherein shallow trench isolation is formed in each sample wafer; obtaining the actual sample depth of the shallow trench isolation in each sample wafer; photoetching a plurality of sample wafers under the same condition to form a pattern structure; acquiring the actual characteristic size of a sample of each graph structure; and selecting the sample actual characteristic size closest to the sample target characteristic size, and taking the sample actual depth corresponding to the sample actual characteristic size closest to the sample target characteristic size as the target depth.
In one embodiment, the target depth is between 200nm and 600 nm.
In one embodiment, when the depth deviation amount is greater than or equal to 10%, the lithography parameter is compensated according to the depth deviation amount. When the depth deviation amount is more than or equal to 10%, the photoetching parameters are compensated according to the characteristic dimension deviation amount, so that the characteristic dimension of the photoetched graph structure can be ensured to be in an effective range, the photoetching correction times can be reduced, and the production efficiency is improved.
In one embodiment, when the depth deviation is greater than 0, the lithographic parameter is compensated for according to the depth deviation. When the depth deviation is larger than 0, the photoetching parameters are compensated according to the characteristic dimension deviation, so that the characteristic dimension of the photoetched graph structure is more accurate, and the influence of the shallow trench isolation depth deviation on the photoetching precision is completely avoided.
In one embodiment, the lithography parameters include one or more of exposure energy, exposure time, and focus.
In one embodiment, determining the characteristic-size deviation amount from the depth deviation amount comprises: providing a plurality of sample wafers, wherein shallow trench isolation is formed in each sample wafer; obtaining the depth of the shallow trench isolation in each sample wafer; photoetching a plurality of sample wafers under the same condition to form a pattern structure; acquiring the characteristic size of each graph structure; randomly selecting two sample wafers, determining a sample depth deviation amount according to the difference of depths in the two sample wafers, and determining a sample characteristic size deviation amount according to the difference of actual characteristic sizes of the graph structures in the two sample wafers; repeating the previous step for a plurality of times to obtain a plurality of sample depth deviation amounts and corresponding sample characteristic size deviation amounts, determining the relationship between the depth deviation amounts and the characteristic size deviation amounts based on the obtained plurality of sample depth deviation amounts and corresponding sample characteristic size deviation amounts, and then determining the characteristic size deviation amounts according to the depth deviation amounts.
In one embodiment, the relation between the depth deviation amount and the characteristic size deviation amount is determined based on the obtained several sample depth deviation amounts and the corresponding sample characteristic size deviation amounts.
In one embodiment, determining the relationship between the depth deviation amount and the characteristic dimension deviation amount comprises: and presetting a function relation, wherein the function relation comprises a constant variable, and the obtained depth deviation amounts of a plurality of samples and the corresponding characteristic size deviation amounts of the samples are substituted into the function relation to determine the constant variable so as to determine the relation between the depth deviation amounts and the characteristic size deviation amounts.
In one embodiment, when the feature size deviation amount is greater than or equal to 5%, the lithography parameter is compensated according to the depth deviation amount.
Drawings
FIG. 1 is a flow chart of a lithographic calibration method of the present invention;
FIG. 2 is a flowchart of determining a lithography parameter compensation amount according to a depth deviation amount in a lithography correction method according to the present invention;
fig. 3 to 5 are schematic diagrams showing the relationship between the depth of the shallow trench isolation and the feature size of the pattern structure.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on methods or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
The inventor of the invention finds that the deviation of the characteristic dimension of the graph structure formed by photoetching is caused by the deviation of the depth of the shallow trench isolation in the wafer to be photoetched, and provides a photoetching correction method based on the finding to solve the problem that the deviation of the depth of the shallow trench isolation affects photoetching.
The photoetching process comprises the following steps: providing a substrate 101, wherein the substrate 101 is provided with shallow trench isolation 102; forming a layer to be etched 103 on the upper surface of the substrate 101; forming a photoresist 104 on the upper surface of the layer to be etched 103; forming an opening 105 in the photoresist 104 by using a photolithography process; the layer to be etched 103 is etched using the photoresist 104 as a mask to form a pattern structure. The photoresist 104 includes a positive photoresist and a negative photoresist. The inventor of the present invention finds that the deviation of the feature size of the pattern structure formed by lithography is caused by the deviation of the depth of the shallow trench isolation 102 in the wafer to be lithographed, as shown in fig. 3, if the depth of the shallow trench isolation 102 is the target depth, the feature size of the formed pattern structure is the target feature size; if the depth of the shallow trench isolation 102 is different from the target depth, the feature size of the pattern structure may be different from the target feature size, for example, as shown in fig. 4, if the depth of the shallow trench isolation 102 is deeper than the target depth, the opening 105 on the photoresist 104 may be smaller, and the feature size of the pattern structure may be different, as shown in fig. 5, if the depth of the shallow trench isolation 102 is shallower than the target depth, the opening 105 on the photoresist 104 may be larger, and the feature size of the pattern structure may be different, otherwise, the negative photoresist may be different.
One embodiment, as shown in FIG. 1, provides a lithographic correction method comprising: providing a wafer to be photoetched, wherein the wafer to be photoetched is internally provided with shallow trench isolation; acquiring the actual depth of shallow trench isolation in a wafer to be photoetched; comparing the actual depth of the shallow trench isolation with the target depth to obtain a depth deviation value; and compensating the photoetching parameters according to the depth deviation amount so as to correct photoetching.
In the embodiment, the photoetching correction method can avoid the influence of the shallow trench isolation depth deviation on the photoetching precision, so that the photoetched graph structure is more accurate, the reworking times are reduced, the production efficiency is improved, and the production cost is saved.
Wherein, the wafer to be photoetched has shallow trench isolation, and the depth of the shallow trench isolation is the actual depth; if the photoetching of the wafer to be photoetched is carried out according to the uncompensated photoetching parameters, the characteristic dimension of the pattern structure formed by photoetching is the actual characteristic dimension; the target characteristic dimension is the characteristic dimension which meets the process requirement; if the wafer to be photoetched is photoetched according to uncompensated photoetching parameters, the characteristic dimension of a graph structure formed by photoetching is a target characteristic dimension, and the depth of the shallow trench isolation of the wafer to be photoetched is the target depth; the uncompensated lithography parameters are actual lithography parameters, and the compensated lithography parameters are target lithography parameters.
S10: providing a wafer to be photoetched, wherein the wafer to be photoetched is internally provided with shallow trench isolation.
S20: and acquiring the actual depth of the shallow trench isolation in the wafer to be photoetched.
S30: and comparing the actual depth of the shallow trench isolation with the target depth to obtain the depth deviation.
In one embodiment, step S30 includes:
s301: determining a target depth;
s302: and comparing the actual depth of the shallow trench isolation with the target depth to obtain the depth deviation.
In one embodiment, step S301 comprises:
s3011: providing a plurality of sample wafers, wherein shallow trench isolation is formed in each sample wafer;
s3012: acquiring the actual depth of a sample of shallow trench isolation in each sample wafer;
s3013: photoetching a plurality of sample wafers under the same condition to form a pattern structure;
s3014: acquiring the actual characteristic size of a sample of each graph structure;
s3015: and selecting the sample actual characteristic size closest to the sample target characteristic size, and taking the sample actual depth corresponding to the sample actual characteristic size closest to the sample target characteristic size as the target depth.
In one embodiment, the target depth is between 200nm and 600nm, for example, the target depth may be 300nm, 400nm, 500 nm.
S40: and compensating the photoetching parameters according to the depth deviation amount so as to correct photoetching.
In one embodiment, as shown in fig. 2, step S40 includes:
s401: providing a target sample wafer and a plurality of sample wafer sets, wherein the target sample wafer is internally provided with shallow trench isolation with a sample target depth, and each sample wafer set comprises a plurality of sample wafers with the same sample actual depth and shallow trench isolation;
s402: acquiring the actual depth of a sample of shallow trench isolation in the sample wafers in each sample wafer set, and comparing the actual depths of a plurality of samples with the target depth of the sample to obtain the depth deviation of the plurality of samples;
s403: photoetching the target sample wafer by using the actual photoetching parameters of the sample to form a target pattern structure;
s404: obtaining a sample target characteristic size of a target graph structure;
s405: randomly selecting 1 sample wafer set, carrying out photoetching on each sample wafer in the sample wafer set by using different photoetching parameters to form a graph structure, obtaining the actual characteristic size of a sample of the graph structure, selecting the actual characteristic size of the sample closest to the target characteristic size of the sample, taking the photoetching parameter corresponding to the actual characteristic size of the sample closest to the target characteristic size of the sample as the target photoetching parameter of the sample, and comparing the target photoetching parameter of the sample with the actual photoetching parameter of the sample to obtain the photoetching parameter compensation quantity of the sample;
s406: repeating the previous step for a plurality of times to obtain a plurality of sample photoetching parameter compensation quantities and corresponding sample depth deviation quantities, determining the relation between the photoetching parameter compensation quantities and the depth deviation quantities based on the obtained plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities, and then determining the photoetching parameter compensation quantities according to the depth deviation quantities.
In another embodiment, step S406 includes:
s4061: repeating the previous step for a plurality of times to obtain a plurality of sample photoetching parameter compensation quantities and corresponding sample depth deviation quantities;
s4062: determining a relational expression between the photoetching parameter compensation amount and the depth deviation amount based on the obtained photoetching parameter compensation amounts of the plurality of samples and the corresponding sample depth deviation amount;
s4063: and determining the photoetching parameter compensation amount according to the depth deviation amount.
In one embodiment, step S4062 includes:
s40621: presetting a function relation, wherein the function relation comprises an independent variable X, a dependent variable Y and a constant variable, the independent variable X represents a depth deviation amount, and the dependent variable Y represents a photoetching parameter compensation amount;
s40622: and substituting the obtained photoetching parameter compensation quantities of the plurality of samples and the corresponding sample depth deviation quantities into a functional relation to determine a constant variable so as to determine a relation between the photoetching parameter compensation quantities and the depth deviation quantities.
In one embodiment, the functional relation may be Y ═ nX + m, where n and m are constant variables.
In one embodiment, the lithography parameters include one or more of exposure energy, exposure time, focus.
In one embodiment, the lithographic parameters are compensated for feature size deviations when the depth deviations are 10% or greater. When the depth deviation amount is more than or equal to 10%, the photoetching parameters are compensated according to the characteristic dimension deviation amount, so that the characteristic dimension of the photoetched graph structure can be ensured to be in an effective range, the photoetching correction times can be reduced, and the production efficiency is improved.
In another embodiment, when the depth deviation is greater than 0, the lithographic parameter is compensated for according to the feature size deviation. When the depth deviation is larger than 0, the photoetching parameters are compensated according to the characteristic dimension deviation, so that the characteristic dimension of the photoetched graph structure is more accurate, and the influence of the shallow trench isolation depth deviation on the photoetching precision is completely avoided.
In one embodiment, in one of the embodiments, determining the characteristic-size deviation amount from the depth deviation amount comprises: providing a plurality of sample wafers, wherein shallow trench isolation is formed in each sample wafer; obtaining the depth of shallow trench isolation in each sample wafer; photoetching a plurality of sample wafers under the same condition to form a pattern structure; acquiring the characteristic size of each graph structure; randomly selecting two sample wafers, determining the sample depth deviation amount according to the difference of the depths of the two sample wafers, and determining the sample characteristic size deviation amount according to the difference of the actual characteristic sizes of the graphic structures of the two sample wafers; repeating the previous step for a plurality of times to obtain a plurality of sample depth deviation amounts and corresponding sample characteristic size deviation amounts, determining the relation between the depth deviation amounts and the characteristic size deviation amounts based on the obtained plurality of sample depth deviation amounts and the corresponding sample characteristic size deviation amounts, and then determining the characteristic size deviation amounts according to the depth deviation amounts.
In one embodiment, the relationship between the depth deviation amount and the characteristic size deviation amount is determined based on the obtained several sample depth deviation amounts and their corresponding sample characteristic size deviation amounts.
In one embodiment, determining the relationship between the depth deviation amount and the characteristic dimension deviation amount comprises: and presetting a function relation, wherein the function relation comprises a constant variable, and the obtained depth deviation amounts of a plurality of samples and the corresponding characteristic size deviation amounts of the samples are brought into the function relation to determine the constant variable so as to determine the relation between the depth deviation amounts and the characteristic size deviation amounts.
In one embodiment, the lithographic parameter is compensated for a depth deviation when the feature size deviation is greater than or equal to 5%.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (13)
1. A lithographic correction method, comprising:
providing a wafer to be photoetched, wherein the wafer to be photoetched is internally provided with shallow trench isolation;
acquiring the actual depth of the shallow trench isolation in the wafer to be photoetched;
comparing the actual depth of the shallow trench isolation with the target depth to obtain a depth deviation value;
and compensating the photoetching parameters according to the depth deviation amount so as to correct photoetching.
2. The lithography correction method of claim 1, wherein determining the lithography parameter compensation amount based on the depth deviation amount comprises:
providing a target sample wafer and a plurality of sample wafer sets, wherein the target sample wafer is provided with shallow trench isolation with a sample target depth, and each sample wafer set comprises a plurality of sample wafers with the same sample actual depth and shallow trench isolation;
obtaining the actual depth of the sample of the shallow trench isolation in the sample wafers in each sample wafer set, and comparing the actual depths of a plurality of samples with the target depth of the sample to obtain a plurality of sample depth deviation values;
photoetching the target sample wafer by using the actual photoetching parameters of the sample to form a target pattern structure;
obtaining a sample target characteristic size of the target graph structure;
randomly selecting 1 sample wafer set, carrying out photoetching on each sample wafer in the sample wafer set by using different photoetching parameters to form a graph structure, obtaining the actual characteristic size of a sample of the graph structure, selecting the actual characteristic size of the sample closest to the target characteristic size of the sample, taking the photoetching parameter corresponding to the actual characteristic size of the sample closest to the target characteristic size of the sample as the target photoetching parameter of the sample, and comparing the target photoetching parameter of the sample with the actual photoetching parameter of the sample to obtain the compensation quantity of the photoetching parameter of the sample;
repeating the previous step for a plurality of times to obtain a plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities, determining the relationship between the photoetching parameter compensation quantities and the depth deviation quantities based on the obtained plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities, and then determining the photoetching parameter compensation quantities according to the depth deviation quantities.
3. The lithography correction method according to claim 2, wherein the relation between the lithography parameter compensation amount and the depth deviation amount is determined based on the obtained sample lithography parameter compensation amounts and the corresponding sample depth deviation amounts.
4. The lithography correction method of claim 3, wherein determining the relationship between the lithography parameter compensation amount and the depth deviation amount comprises: and presetting a function relation, wherein the function relation comprises a constant variable, and the obtained a plurality of sample photoetching parameter compensation quantities and the corresponding sample depth deviation quantities are brought into the function relation to determine the constant variable so as to determine the relation between the photoetching parameter compensation quantities and the depth deviation quantities.
5. The lithography correction method of claim 1, wherein the target depth determination method comprises:
providing a plurality of sample wafers, wherein shallow trench isolation is formed in each sample wafer;
obtaining the actual sample depth of the shallow trench isolation in each sample wafer;
photoetching a plurality of sample wafers under the same condition to form a pattern structure;
acquiring the actual characteristic size of a sample of each graph structure;
and selecting the sample actual characteristic size closest to the sample target characteristic size, and taking the sample actual depth corresponding to the sample actual characteristic size closest to the sample target characteristic size as the target depth.
6. The lithographic correction method of claim 1, wherein the target depth is between 200nm and 600 nm.
7. The lithography correction method according to claim 1, wherein when the depth deviation amount is 10% or more, the lithography parameter is compensated according to the depth deviation amount.
8. The lithography correction method according to claim 1, wherein when the depth deviation amount is larger than 0, the lithography parameter is compensated according to the depth deviation amount.
9. The lithography correction method of claim 1, wherein the lithography parameters include one or more of exposure energy, exposure time, and focus.
10. The lithography correction method of claim 1, wherein determining a feature size deviation amount from the depth deviation amount comprises:
providing a plurality of sample wafers, wherein shallow trench isolation is formed in each sample wafer;
obtaining the depth of the shallow trench isolation in each sample wafer;
photoetching a plurality of sample wafers under the same photoetching conditions to form a pattern structure;
acquiring the characteristic size of each graph structure;
randomly selecting two sample wafers, determining a sample depth deviation amount according to the difference of depths in the two sample wafers, and determining a sample characteristic size deviation amount according to the difference of actual characteristic sizes of the graph structures in the two sample wafers;
repeating the previous step for a plurality of times to obtain a plurality of sample depth deviation amounts and corresponding sample characteristic size deviation amounts, determining the relationship between the depth deviation amounts and the characteristic size deviation amounts based on the obtained plurality of sample depth deviation amounts and corresponding sample characteristic size deviation amounts, and then determining the characteristic size deviation amounts according to the depth deviation amounts.
11. The lithography correction method according to claim 10, wherein the relation between the depth deviation amount and the feature size deviation amount is determined based on the obtained plurality of sample depth deviation amounts and the corresponding sample feature size deviation amounts.
12. The lithographic correction method of claim 11, wherein determining the relationship between the depth deviation amount and the feature size deviation amount comprises: and presetting a function relation, wherein the function relation comprises a constant variable, and the obtained depth deviation amounts of a plurality of samples and the corresponding characteristic size deviation amounts of the samples are substituted into the function relation to determine the constant variable so as to determine the relation between the depth deviation amounts and the characteristic size deviation amounts.
13. The lithography correction method according to claim 10, wherein when the feature size deviation amount is 5% or more, the lithography parameter is compensated according to the depth deviation amount.
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| CN101546129A (en) * | 2008-03-25 | 2009-09-30 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring exposure device by adopting side wall angles |
| CN102402126A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Structure for detecting lighting conditions in lithography and detection method thereof |
| CN103531444A (en) * | 2012-07-02 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
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| CN101546129A (en) * | 2008-03-25 | 2009-09-30 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring exposure device by adopting side wall angles |
| CN102402126A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Structure for detecting lighting conditions in lithography and detection method thereof |
| CN103531444A (en) * | 2012-07-02 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
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