CN112850780B - Phosphorus doped beta-Ga 2 O 3 Preparation method of micron line - Google Patents
Phosphorus doped beta-Ga 2 O 3 Preparation method of micron line Download PDFInfo
- Publication number
- CN112850780B CN112850780B CN202110021088.5A CN202110021088A CN112850780B CN 112850780 B CN112850780 B CN 112850780B CN 202110021088 A CN202110021088 A CN 202110021088A CN 112850780 B CN112850780 B CN 112850780B
- Authority
- CN
- China
- Prior art keywords
- phosphorus
- oxygen
- beta
- argon
- micron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses phosphorus-doped beta-Ga 2 O 3 The preparation method of micron line comprises mixing gallium oxide powder with purity of more than 99.9%, carbon powder and P 2 O 5 The powder is mixed according to the mass ratio of 6Putting the corundum boat into a chemical vapor deposition system quartz tube, wherein the substrate is positioned 1 to 2cm above a reaction source material; introducing argon, wherein the flow rate of the argon is controlled at 300ml/min; when the heating temperature reaches 1100 ℃, oxygen is introduced, the oxygen flow is controlled at 300ml/min, and the growth time is 20-40 minutes; and closing the oxygen, keeping the flow of the argon, cooling to room temperature, and taking out the sample. Stripping a single microwire from the bottom of the microwire sample, titrating silver colloid electrodes at two ends of the microwire sample, and preparing the single phosphorus-doped beta-Ga 2 O 3 Micron ultraviolet detector, specific to undoped beta-Ga 2 O 3 The micron line detector has better ultraviolet detection performance.
Description
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to phosphorus-doped beta-Ga 2 O 3 A preparation method of micron line.
Background
Monoclinic structure beta-Ga 2 O 3 The ultra-wideband semiconductor material is a novel ultra-wideband gap (4.9 eV) and has wide application prospect in the fields of new-generation power electronic devices and photoelectric devices. In recent years, beta-Ga 2 O 3 The research of semiconductor materials mainly focuses on nano/micron materials and thin film materials, and compared with thin films and bulk materials, the nano/micron materials have superior performances such as high crystallization quality, quantum size effect, low-cost preparation and the like, and are widely concerned by scholars at home and abroad. Because the ozone layer has strong absorption effect on ultraviolet radiation of 200-280 nm, the beta-Ga 2 O 3 The ultra-wideband gap enables the absorption cut-off edge to be about 280nm, solar blind ultraviolet light can be well detected, the micro/nano structure has large surface volume ratio and good crystallization quality, and the sensitivity of the device can be remarkably increased, so that beta-Ga 2 O 3 Microwires have been applied to solar blind ultraviolet detectors. Currently single root of beta-Ga 2 O 3 The micron line solar blind ultraviolet detector is manufactured by the method that a single beta-Ga 2 O 3 Electrodes (conductive silver adhesive) are manufactured at two ends of the micron line and connected with a semiconductor parameter tester, and the result of ultraviolet detection is reflected by detecting the numerical value of the photocurrent of the device. However, beta-Ga is present 2 O 3 The microwires are mostly undoped beta-Ga 2 O 3 Nano/micro materials, up to now not seen for phosphorus doping of beta-Ga 2 O 3 Micron line and single phosphorus-doped beta-Ga capable of effectively improving ultraviolet detection performance 2 O 3 Related reports of micrometer ultraviolet detectors.
Disclosure of Invention
The present invention provides a phosphorus-doped beta-Ga for solving the above technical problems of the prior art 2 O 3 A preparation method of micron line.
The technical solution of the invention is as follows: phosphorus-doped beta-Ga 2 O 3 The preparation method of the micron line sequentially comprises the following steps:
a. mixing gallium oxide powder with purity of more than 99.9%, carbon powder and P 2 O 5 Mixing the powder according to the mass ratio of 6;
b. introducing carrier gas argon, wherein the flow of the argon is controlled at 300ml/min;
c. when the heating temperature reaches 1100 ℃, oxygen is introduced, the oxygen flow is controlled at 300ml/min, and the growth time is 20-40 minutes;
d. and closing the oxygen, keeping the flow of the argon, cooling to room temperature, and taking out the sample.
The invention adopts a chemical vapor deposition method to prepare phosphorus-doped beta-Ga on a quartz boat and a substrate above a source material through oxidation and reduction reactions between the source material 2 O 3 Micron-scale wire, phosphorus-doped beta-Ga prepared therefrom 2 O 3 Micron meterThe diameter of the wire is 30 to 50 μm, and the length is 0.6 to 1.0cm. Stripping a single microwire from the bottom of the microwire sample, titrating silver colloid electrodes at two ends of the microwire sample, and preparing the single phosphorus-doped beta-Ga 2 O 3 Micrometer ultraviolet detector. Not only has simple manufacturing method and low cost, but also has better performance than the undoped beta-Ga 2 O 3 The micron line detector has better ultraviolet detection performance.
Drawings
FIG. 1 is a photograph of a physical camera of a sample prepared in example 1 of the present invention.
FIG. 2 is a single P-doped beta-Ga prepared in example 1 of the present invention 2 O 3 SEM photograph of microwire.
FIG. 3 is a single P-doped beta-Ga prepared in example 1 of the present invention 2 O 3 Energy dispersive spectrum of micron line.
Fig. 4 is a response time curve of a single phosphor-doped microwire detector fabricated in example 1 of the present invention under 254nm uv light.
FIG. 5 is an SEM photograph of a sample prepared in example 2 of the present invention.
Fig. 6 is a response time curve of a single phosphor-doped microwire detector fabricated in example 2 of the present invention under 254nm uv light.
FIG. 7 is a graph of response time of an undoped single microwire detector fabricated in accordance with comparative examples of the present invention under 254nm UV light.
Detailed Description
Example 1~2 an existing chemical vapor deposition apparatus, such as a tube furnace or the like, was used.
Example 1:
the phosphorus-doped beta-Ga of the invention 2 O 3 The preparation method of the micron line sequentially comprises the following steps:
a. mixing gallium oxide powder with purity of more than 99.9%, carbon powder and P 2 O 5 Mixing the powder according to a mass ratio of 6;
b. introducing carrier gas argon, wherein the flow of the argon is controlled at 300ml/min;
c. when the heating temperature reaches 1100 ℃, oxygen is introduced, the oxygen flow is controlled at 300ml/min, and the growth time is 30 minutes;
d. and closing the oxygen, keeping the flow of the argon, cooling to room temperature, and taking out the sample.
FIG. 1 is phosphorus doped β -Ga prepared in example 1 2 O 3 The actual photo of the micrometer wire can be seen from fig. 1 that the micrometer wire has a large density and a length of 0.6cm. FIG. 2 is a graph of example 1 showing a single phosphorus doped beta-Ga strip from the bottom of a sample substrate 2 O 3 SEM images of the microwires, fig. 2 gives the diameter of a single microwire of about 40 μm. FIG. 3 Energy Dispersive Spectroscopy (EDS) of a single micron line prepared in example 1, it can be seen from FIG. 3 that for the phosphor-doped micron line, the presence of phosphorus elements was detected in addition to the Ga and O elements, with a phosphorus content of about 2 mole percent. Fig. 4 is a response time curve of the ultraviolet detector made of the single microwire prepared in example 1 under 254nm ultraviolet light, and it can be seen from fig. 4 that the ultraviolet detector can be well modulated by the 254nm ultraviolet light, and the ultraviolet detector shows excellent repeatability and stability in the test process. The dark current value of the ultraviolet detector is about I d =1.72nA, photocurrent was about I l =2.0 μ a, and the ratio of light to dark current is about (I) l ：I d ）1.16×10 3 。
Example 2:
the phosphorus-doped beta-Ga of the invention 2 O 3 The preparation method of the micron line sequentially comprises the following steps:
a. mixing gallium oxide powder with purity of more than 99.9%, carbon powder and P 2 O 5 Mixing the powder according to the mass ratio of 6;
b. introducing carrier gas argon, wherein the flow of the argon is controlled at 300ml/min;
c. when the heating temperature reaches 1100 ℃, introducing reaction gas oxygen, controlling the flow of the oxygen at 300ml/min, and controlling the growth time at 30 minutes;
d. and closing the oxygen, keeping the flow of the argon, cooling to room temperature, and taking out the sample.
FIG. 5 is phosphorus doped β -Ga prepared in example 2 2 O 3 The actual photo of the microwire shows that the grown microwire has a large density and a length of 1cm from fig. 5, and the test shows that the diameter of a single microwire is about 40 μm. In addition, EDS spectra gave phosphorus-doped β -Ga prepared in example 2 2 O 3 The mole percent of phosphorus in the microwire was about 3%. FIG. 6 is a graph of response time of an ultraviolet detector made with microwires prepared in example 2 under 254nm ultraviolet light. It can be seen from FIG. 6 that the dark current value of the ultraviolet device is about I d =1.56nA, photocurrent was about I l =3.0 μ a, and the ratio of light to dark current is about (I) l ：I d ）1.92×10 3 . Compared with the performance of the ultraviolet detector prepared in example 1, the ultraviolet detection performance of a single micrometer ultraviolet detector is obviously enhanced along with the increase of the doping amount of the phosphorus in the micrometer light.
Comparative example
The method comprises the following steps:
a. mixing gallium oxide powder with the purity of more than 99.9% and carbon powder according to a mass ratio of 6:9 to prepare a reaction source material, putting the reaction source material into a corundum boat, then putting the corundum boat into the center of a quartz tube of a chemical vapor deposition system, and positioning a sapphire substrate 1.5cm above the reaction source material;
b. introducing carrier gas argon, wherein the flow of the argon is controlled at 300ml/min;
c. when the heating temperature reaches 1100 ℃, introducing reaction gas oxygen, controlling the flow of the oxygen at 300ml/min, and controlling the growth time at 30 minutes;
d. and closing the oxygen, keeping the flow of the argon, cooling to room temperature, and taking out the sample.
Similarly, a single micron line is stripped from the bottom of the sample substrate, and electrodes are respectively manufactured at two ends of the single micron line, so that the single gallium oxide micron ultraviolet detector shown in the figure is manufactured.
The response time curve of the single microwire device obtained in the comparative example to 254nm ultraviolet light is shown in fig. 7.
The comparative example is a gallium oxide sample not doped with phosphorus, and the other growth conditions were the same as in examples 1 and 2. FIG. 7 shows that the photocurrent value of the UV detector of a single micrometer of light is about I for the sample without doped phosphorus l =1.25 μ a, light to dark current ratio of about (I) l ：I d ）6.25×10 2 By comparison, it can be seen that the values are significantly lower than for phosphorus doped examples 1 and 2.
Claims (1)
1. Phosphorus-doped beta-Ga 2 O 3 The preparation method of the micron line is characterized by comprising the following steps in sequence:
a. mixing gallium oxide powder with purity of more than 99.9%, carbon powder and P 2 O 5 Mixing the powder according to the mass ratio of 6;
b. introducing carrier gas argon, wherein the flow of the argon is controlled at 300ml/min;
c. when the heating temperature reaches 1100 ℃, oxygen is introduced, the oxygen flow is controlled at 300ml/min, and the growth time is 20-40 minutes;
d. closing oxygen, keeping argon flow, cooling to room temperature, and taking out a sample, namely phosphorus-doped beta-Ga 2 O 3 Micron-scale wire, phosphorus-doped beta-Ga prepared therefrom 2 O 3 The diameter of the micrometer line is 30 to 50 micrometers, and the length of the micrometer line is 0.6 to 1.0cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110021088.5A CN112850780B (en) | 2021-01-08 | 2021-01-08 | Phosphorus doped beta-Ga 2 O 3 Preparation method of micron line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110021088.5A CN112850780B (en) | 2021-01-08 | 2021-01-08 | Phosphorus doped beta-Ga 2 O 3 Preparation method of micron line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112850780A CN112850780A (en) | 2021-05-28 |
| CN112850780B true CN112850780B (en) | 2022-11-08 |
Family
ID=76005137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110021088.5A Active CN112850780B (en) | 2021-01-08 | 2021-01-08 | Phosphorus doped beta-Ga 2 O 3 Preparation method of micron line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112850780B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115108580B (en) * | 2022-05-11 | 2024-03-05 | 中国科学院长春光学精密机械与物理研究所 | Gallium oxide micron line preparation method, solar blind ultraviolet detector and preparation method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4630986B2 (en) * | 2003-02-24 | 2011-02-09 | 学校法人早稲田大学 | β-Ga2O3-based single crystal growth method |
| KR101109123B1 (en) * | 2008-08-29 | 2012-02-15 | 한국화학연구원 | Synthetic method of red emitting gallate phosphors with high color purity |
| CN105197983B (en) * | 2015-07-29 | 2017-03-22 | 辽宁师范大学 | Method for preparing Zn-doped p-type beta-Ga2O3 nanowire according to chemical vapor deposition method |
| CN108286043B (en) * | 2018-01-16 | 2019-12-24 | 辽宁师范大学 | Preparation of beta-Ga by chemical vapor deposition2O3Method of nanosphere |
| CN109384258B (en) * | 2018-12-17 | 2021-01-05 | 辽宁师范大学 | Growth of beta-Ga by chemical vapor deposition2O3Method for producing microwire |
| FR3085535B1 (en) * | 2019-04-17 | 2021-02-12 | Hosseini Teherani Ferechteh | A method of manufacturing p-type gallium oxide by intrinsic doping, the resulting thin film of gallium oxide and its use |
| CN110676352B (en) * | 2019-09-22 | 2021-01-01 | 太原理工大学 | Sn doped beta-Ga2O3Preparation method of membrane solar blind ultraviolet detector |
-
2021
- 2021-01-08 CN CN202110021088.5A patent/CN112850780B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112850780A (en) | 2021-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Huang et al. | Core–shell structure of zinc oxide/indium oxide nanorod based hydrogen sensors | |
| Sun et al. | Rapid synthesis of ZnO nano-rods by one-step, room-temperature, solid-state reaction and their gas-sensing properties | |
| Jundale et al. | Nanocrystalline CuO thin films for H2S monitoring: microstructural and optoelectronic characterization | |
| Ferro et al. | F‐Doped CdO Thin Films Deposited by Spray Pyrolysis | |
| Khayatian et al. | Diameter-controlled synthesis of ZnO nanorods on Fe-doped ZnO seed layer and enhanced photodetection performance | |
| CN110676339B (en) | Gallium oxide nanocrystalline film solar blind ultraviolet detector and preparation method thereof | |
| Ma et al. | High-performance solar blind ultraviolet photodetector based on single crystal orientation Mg-alloyed Ga2O3 film grown by a nonequilibrium MOCVD scheme | |
| Gu et al. | Structural, optical and photoelectric properties of Mn-doped ZnO films used for ultraviolet detectors | |
| Saikia et al. | Synthesis, characterization and photovoltaic application of silver doped CdS/PVA nanocomposite thin films | |
| Chebil et al. | Structural, optical and NO2 gas sensing properties of ZnMgO thin films prepared by the sol gel method | |
| CN112850780B (en) | Phosphorus doped beta-Ga 2 O 3 Preparation method of micron line | |
| CN108346712B (en) | Preparation method of silicon-doped boron nitride/graphene PN junction type ultraviolet detector | |
| Chen et al. | Boosting the performance of ZnO microrod metal-semiconductor-metal photodetectors via surface capping of thin amorphous Al2O3 shell layer | |
| CN113862785A (en) | Double perovskite single crystal, preparation method and application thereof, and double perovskite single crystal photoelectric detector | |
| Wu et al. | Self-catalyst β-Ga 2 O 3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors | |
| Pan et al. | Ultrahigh detectivity ultraviolet photodetector based on orthorhombic phase CsPbI3 microwire using temperature self-regulating solar reactor | |
| CN102942209A (en) | Method for preparing one-dimensional nanostructure zinc oxides through changing tin doping ratio | |
| CN109957759A (en) | Cu adulterates β-Ga2O3The preparation method of film and corresponding structure | |
| CN109354057A (en) | A kind of stannum oxide nano-crystal and preparation method thereof and preparation method of solar battery | |
| CN109830607B (en) | One kind (HC (NH) 2 ) 2 ) x R 1-x PbI 3 Perovskite single crystal detector and preparation method thereof | |
| CN109183151B (en) | Graphene quantum dot doped gallium oxide crystal material and preparation method thereof | |
| Zheng et al. | Effect of the Concentration of Eu 3+ Ions on Crystalline and Optical Properties of ZnO Nanowires. | |
| Mokhtari et al. | Effects of chromium dopant on ultraviolet photoresponsivity of ZnO nanorods | |
| Abed et al. | Comparative study of UV-ZnO NRs photodetectors based on seeded porous silicon by RF-sputtering and drop-casting methods | |
| Chou et al. | The study of humidity sensor based on Li-doped ZnO nanorods by hydrothermal method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |