CN112838849A - Electrostatic protection circuit of output pin - Google Patents
Electrostatic protection circuit of output pin Download PDFInfo
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- CN112838849A CN112838849A CN202011638052.3A CN202011638052A CN112838849A CN 112838849 A CN112838849 A CN 112838849A CN 202011638052 A CN202011638052 A CN 202011638052A CN 112838849 A CN112838849 A CN 112838849A
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- circuit
- output
- static
- output pin
- electrostatic protection
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- 230000003068 static effect Effects 0.000 claims abstract description 74
- 238000012544 monitoring process Methods 0.000 claims abstract description 29
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 229910021332 silicide Inorganic materials 0.000 abstract description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 238000007599 discharging Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
Abstract
The invention discloses an electrostatic protection circuit of an output pin, which comprises: the static monitoring circuit, the static control circuit and the static discharge circuit are connected between a power supply and the ground; the static monitoring circuit is used for monitoring whether a static event occurs; when a static event occurs, sending an instruction to the static control circuit to control the conduction or the closing of the output driving tube; and controlling the electrostatic discharge circuit to be started. The electrostatic protection circuit of the output pin can effectively solve the technical problems that the application range is limited due to the arrangement of the output resistor or parts are additionally added and the size of a chip is increased due to the introduction of a metal silicide removing process in the conventional electrostatic protection scheme of the output pin.
Description
Technical Field
The invention relates to the technical field of electrostatic protection, in particular to an electrostatic protection circuit of an output pin.
Background
As shown in fig. 1-2, in a conventional electrostatic protection scheme for an output pin, an additional output resistor (Rout) is required at an output terminal to limit an electrostatic current flowing through an output driving transistor, so as to protect the output driving transistor. However, in many practical applications, the extra output resistance is not acceptable. For example, a power output type circuit requiring very low on-resistance, which requires several tens, even several milliohms. In these applications, any additional output resistance is not acceptable.
In the existing electrostatic protection scheme for the output pin, if an extra output resistor is not added, a metal silicide removal process (silicide blocking) is usually required to be added to the output driving tube. It is known that after sub-micron process nodes (less than about 0.25 μm), metal silicides are used to reduce the contact resistance between metal lines and the silicon substrate. The introduction of the metal silicide process can reduce the electrostatic protection capability of the output driving tube. Therefore, in turn, it is necessary to partially remove the metal silicide on the output driving tube, and increase the distance between the gate and the source/drain of the output driving tube, so as to improve the electrostatic protection capability of the output driving tube. However, the process for removing the metal silicide on the output driving tube needs extra expensive cost, and not only needs an extra layer of lighting panel, but also needs larger layout area and chip size.
Therefore, in order to solve the above technical problems, it is necessary to provide an electrostatic protection circuit for an output pin.
Disclosure of Invention
The invention aims to provide an electrostatic protection circuit of an output pin, which aims to solve the technical problems that the application range is limited due to the arrangement of an output resistor or parts are required to be additionally added and the chip size is required to be increased due to the introduction of a removing process of adding metal silicide in the conventional electrostatic protection scheme of the output pin.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:
an electrostatic protection circuit for an output pin, comprising: the static monitoring circuit, the static control circuit and the static discharge circuit are connected between a power supply and the ground;
the static monitoring circuit is used for monitoring whether a static event occurs; and the number of the first and second groups,
when a static event occurs, sending an instruction to the static control circuit to control the conduction or the closing of the output driving tube; and controlling the electrostatic discharge circuit to be started.
In one embodiment, the device further comprises a pre-driving circuit; the pre-driving circuit is connected to the static control circuit and the output driving tube.
In one embodiment, the pre-driver circuit includes a high-side pre-driver circuit and a low-side pre-driver circuit.
In one embodiment, the pre-driver circuit is an or gate logic circuit; the input end of the pre-drive circuit is connected to the static control circuit, and the output end of the pre-drive circuit is connected to the output drive tube.
In one embodiment, the output drive tube comprises a high-side drive tube and a low-side drive tube;
the high-side driving tube is a PMOS tube; the source electrode of the high-side driving tube is connected with a power supply, the drain electrode of the high-side driving tube is connected with an output pin, and the grid electrode of the high-side driving tube is connected with the high-side pre-driving circuit;
the low-side driving tube is an NMOS tube; the source electrode of the low-side driving tube is connected to the ground, the drain electrode of the low-side driving tube is connected to the output pin, and the grid electrode of the low-side driving tube is connected to the low-side pre-driving circuit.
In one embodiment, the device further comprises a low-side electrostatic protection circuit; the low-side protection circuit is connected between the output pin and ground.
In one embodiment, the device further comprises a high-side electrostatic protection circuit; the high-side electrostatic protection circuit is connected between the output pin and the power supply.
In one embodiment, the static electricity monitoring circuit comprises a resistor and a capacitor connected in series; one end of the capacitor is connected to a power supply, and one end of the resistor is grounded; the connection ends of the capacitor and the resistor are connected with the electrostatic control circuit and the electrostatic discharge circuit.
In one embodiment, the static control circuit includes a schmitt trigger, an input terminal of which is connected to the static monitoring circuit and an output terminal of which is connected to the pre-driving circuit.
In one embodiment, the electrostatic discharge circuit includes an NMOS transistor and an operational amplifier; the source electrode of the NMOS tube is connected to the ground, and the drain electrode of the NMOS tube is connected to the power supply; the input end of the operational amplifier is connected with the static monitoring circuit, and the output end of the operational amplifier is connected with the grid electrode of the NMOS tube.
Compared with the prior art, the invention has the following advantages:
the invention aims at the technical problems that the application range is limited because the existing electrostatic control circuit is provided with an output resistor, or an additional component is needed and the chip size is increased because a removing process of adding metal silicide is introduced, the electrostatic control circuit controls the output driving tube, thereby ensuring that the voltage on an electrostatic protection path is lower than the breakdown voltage of the driving tube to achieve the purpose of protecting the output driving tube, and therefore, under the condition, the output resistor is not needed any more, and the problems in the prior art are avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic circuit diagram of an electrostatic protection circuit with single-side electrostatic protection for an output driver circuit in the prior art;
FIG. 2 is a schematic diagram of a circuit structure of an electrostatic protection circuit with double-sided electrostatic protection for an output driver circuit in the prior art;
FIG. 3 is a schematic circuit diagram of an ESD protection circuit with single-sided ESD output pin of the output driver circuit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a specific circuit structure of the electrostatic protection circuit shown in FIG. 3;
FIG. 5 is a schematic diagram of an ESD protection circuit with output pins with double-sided ESD protection for an output driver circuit according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a specific circuit structure of the electrostatic protection circuit shown in FIG. 5;
FIG. 7 is a schematic circuit diagram of an ESD protection circuit without an ESD protection output pin of the output driver circuit according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a specific circuit structure of the electrostatic protection circuit shown in fig. 7.
Detailed Description
The present invention will be described in detail below with reference to embodiments shown in the drawings. The embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to the embodiments are included in the scope of the present invention.
The prior static control circuit limits the application range because of setting output resistance, or needs additional components and increases the chip size because of introducing the removing process of adding metal silicide. Aiming at the problems in the prior art, the embodiment of the invention controls the output driving tube through the static control circuit, thereby ensuring that the voltage on the static protection path is lower than the breakdown voltage of the driving tube to achieve the purpose of protecting the output driving tube, and therefore, under the condition, the output resistor is not needed any more, and the problems in the prior art are avoided.
Example 1
As shown in fig. 3, an electrostatic protection circuit for an output pin according to an embodiment of the present invention includes: the static electricity protection circuit comprises a static electricity monitoring circuit, a static electricity control circuit, an electrostatic discharge circuit, a high-side pre-drive circuit, a low-side pre-drive circuit, a high-side drive tube, a low-side drive tube and a low-side static electricity protection circuit. The static monitoring circuit, the static control circuit and the static discharge circuit are connected between the power supply and the ground. The pre-driving circuit comprises a high-side pre-driving circuit and a low-side pre-driving circuit and is composed of an OR gate logic circuit. The input end of the pre-drive circuit is connected to the static control circuit.
In this embodiment, the output driving tube is also composed of a high-side driving tube and a low-side driving tube. As shown in fig. 3, the high-side driving transistor is a PMOS transistor, a source of the high-side driving transistor is connected to a power supply, a drain of the high-side driving transistor is connected to an output pin, and a gate of the high-side driving transistor is connected to the high-side pre-driving circuit; the low-side driving tube is an NMOS tube; the source electrode of the low-side driving tube is connected to the ground, the drain electrode of the low-side driving tube is connected to the output pin, and the grid electrode of the low-side driving tube is connected to the low-side pre-driving circuit.
As shown in fig. 4, the static electricity monitoring circuit includes a resistor R1 and a capacitor C1 connected in series; one end of the capacitor C1 is connected to a power supply, and one end of the resistor R1 is grounded; the connection ends of the capacitor and the resistor are connected with the electrostatic control circuit and the electrostatic discharge circuit. The static control circuit comprises a Schmitt trigger, the input end of the Schmitt trigger is connected with the static monitoring circuit, and the output end of the Schmitt trigger is connected with the pre-driving circuit. The electrostatic discharge circuit comprises an NMOS tube and an operational amplifier; the source electrode of the NMOS tube is connected to the ground, and the drain electrode of the NMOS tube is connected to the power supply; the input end of the operational amplifier is connected with the static monitoring circuit, and the output end of the operational amplifier is connected with the grid electrode of the NMOS tube.
As shown in fig. 3, the low-side esd protection circuit is connected between the output pin and ground, so as to form an output driver circuit with single-side esd protection. Further, as shown in fig. 4, the low-side esd protection circuit may include a filter circuit composed of a resistor R2 and a capacitor C2, and an NMOS transistor. The source electrode of the NMOS tube is connected to the pin output end, the drain electrode of the NMOS tube is grounded, and the grid electrode of the NMOS tube is connected to the resistor R2 and the capacitor C2.
When the power supply is not powered up and a static electricity event occurs at the output pin of the output terminal, the parasitic body diode of the high-side driving tube of the output pin transfers the static electricity to the power line of the chip, and a static electricity monitoring circuit which is connected between the power supply and the ground and consists of R1 and C1 detects the occurrence of the static electricity. And then sending a control signal to the static control circuit to further control the conduction or the closing of the output high-side driving tube and the low-side driving tube. Meanwhile, the static monitoring circuit can also send a control signal to the static discharge circuit with the controllable power supply to the ground to control the starting state of the static discharge circuit and realize static discharge.
Therefore, when the high-side driving tube and the low-side driving tube have weak electrostatic protection capability, the output driving tube can be turned off through the electrostatic control circuit, so that the breakdown voltage is higher. Meanwhile, the static monitoring circuit connected between the power supply and the ground sends a control signal to the static discharging circuit, so that the starting voltage of the static discharging circuit is lower. Therefore, the voltage on the electrostatic protection path is lower than the breakdown voltage of the output driving tube, and the purpose of protecting the output driving tube is achieved.
When the electrostatic protection capability of the output driving tube is stronger, the output driving tube can be turned on through the electrostatic control circuit, so that the bidirectional discharge of the electrostatic discharge circuit and the output driving tube is realized, and the electrostatic discharge capability of the output driving tube is stronger.
If the chip works in a normal function, namely the power supply is electrified, the static monitoring circuit can simultaneously send control signals to the static control circuit and the static discharge circuit to enable the static control circuit and the static discharge circuit not to work any more, and therefore the normal function of the chip is prevented from being influenced.
The technical scheme shows that the invention has the following beneficial effects:
the invention aims at the technical problems that the application range is limited because the existing electrostatic control circuit is provided with an output resistor, or an additional component is needed and the chip size is increased because a removing process of adding metal silicide is introduced, the electrostatic control circuit controls the output driving tube, thereby ensuring that the voltage on an electrostatic protection path is lower than the breakdown voltage of the driving tube to achieve the purpose of protecting the output driving tube, and therefore, under the condition, the output resistor is not needed any more, and the problems in the prior art are avoided.
Example 2
The embodiment discloses an electrostatic protection circuit of an output pin. Compared with the electrostatic protection circuit of the output pin of embodiment 1, as shown in fig. 5, the electrostatic protection circuit of the output pin of this embodiment further includes a high-side electrostatic protection circuit; the high-side electrostatic protection circuit is connected between the output pin and the power supply, so that the output drive circuit with double-side electrostatic protection is formed.
As shown in fig. 6, the high-side esd protection circuit and the esd protection circuit may be formed of diodes. When the power supply is not electrified and the electrostatic event occurs at the output pin of the output end, the high-side electrostatic protection diode of the output pin transmits the static electricity to the power line of the chip. At this time, the static electricity monitoring circuit composed of R1 and C1 connected between the power supply and the ground will detect the occurrence of static electricity, and then send out a control signal to the static electricity control circuit to further control the conduction or closing of the output high-side driving tube and the output low-side driving tube. Meanwhile, the static monitoring circuit can also send a control signal to the static discharge circuit with the controllable power supply to the ground to control the starting state of the static discharge circuit and realize static discharge.
Example 3
The embodiment discloses an electrostatic protection circuit of an output pin. Compared with the electrostatic protection circuit of the output pin of embodiment 1, as shown in fig. 7, the electrostatic protection circuit of this embodiment does not need an additional electrostatic protection circuit.
As shown in fig. 8, when an electrostatic event occurs at the output pin, the parasitic body diode of the high-side driving transistor of the output pin transmits the electrostatic charge to the power line of the chip, the electrostatic monitoring circuit connected between the power supply and the ground and composed of R1 and C1 detects the occurrence of the electrostatic charge, and the electrostatic monitoring circuit connected between the power supply and the ground and composed of R1 and C1 detects the occurrence of the electrostatic charge, and then sends a control signal to the electrostatic control circuit to further control the conduction or the closing of the output high-side driving transistor and the output low-side driving transistor. Meanwhile, the static monitoring circuit can also send a control signal to the static discharge circuit with the controllable power supply to the ground to control the starting state of the static discharge circuit and realize static discharge.
It can be understood by those skilled in the art that embodiment 2, embodiment 3 and embodiment 1 are based on the same inventive concept, and the related contents of embodiment 2 and embodiment 3 can refer to the description of embodiment 1, and are not described herein again.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. An electrostatic protection circuit for an output pin, comprising: the static monitoring circuit, the static control circuit and the static discharge circuit are connected between a power supply and the ground;
the static monitoring circuit is used for monitoring whether a static event occurs; and the number of the first and second groups,
when a static event occurs, sending an instruction to the static control circuit to control the conduction or the closing of the output driving tube; and controlling the electrostatic discharge circuit to be started.
2. The electrostatic protection circuit for an output pin of claim 1, further comprising a pre-driver circuit; the pre-driving circuit is connected to the static control circuit and the output driving tube.
3. The electrostatic protection circuit for an output pin of claim 2, wherein the pre-driver circuit comprises a high-side pre-driver circuit and a low-side pre-driver circuit.
4. The electrostatic protection circuit for an output pin of claim 2, wherein the pre-driver circuit is an or gate logic circuit; the input end of the pre-drive circuit is connected to the static control circuit, and the output end of the pre-drive circuit is connected to the output drive tube.
5. The electrostatic protection circuit for an output pin of claim 3, wherein the output driver transistors comprise a high side driver transistor and a low side driver transistor;
the high-side driving tube is a PMOS tube; the source electrode of the high-side driving tube is connected with a power supply, the drain electrode of the high-side driving tube is connected with an output pin, and the grid electrode of the high-side driving tube is connected with the high-side pre-driving circuit;
the low-side driving tube is an NMOS tube; the source electrode of the low-side driving tube is connected to the ground, the drain electrode of the low-side driving tube is connected to the output pin, and the grid electrode of the low-side driving tube is connected to the low-side pre-driving circuit.
6. The electrostatic protection circuit for an output pin of claim 1, further comprising a low side electrostatic protection circuit; the low-side protection circuit is connected between the output pin and ground.
7. The electrostatic protection circuit for an output pin of claim 5, further comprising a high-side electrostatic protection circuit; the high-side electrostatic protection circuit is connected between the output pin and the power supply.
8. The electrostatic protection circuit for an output pin of claim 1, wherein the electrostatic monitoring circuit comprises a resistor and a capacitor connected in series; one end of the capacitor is connected to a power supply, and one end of the resistor is grounded; the connection ends of the capacitor and the resistor are connected with the electrostatic control circuit and the electrostatic discharge circuit.
9. The electrostatic protection circuit for an output pin of claim 2, wherein the electrostatic control circuit comprises a schmitt trigger, an input terminal of the schmitt trigger is connected to the electrostatic monitoring circuit, and an output terminal of the schmitt trigger is connected to the pre-driver circuit.
10. The electrostatic protection circuit for an output pin of claim 1, wherein the electrostatic discharge circuit comprises an NMOS transistor and an operational amplifier; the source electrode of the NMOS tube is connected to the ground, and the drain electrode of the NMOS tube is connected to the power supply; the input end of the operational amplifier is connected with the static monitoring circuit, and the output end of the operational amplifier is connected with the grid electrode of the NMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011638052.3A CN112838849A (en) | 2020-12-31 | 2020-12-31 | Electrostatic protection circuit of output pin |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011638052.3A CN112838849A (en) | 2020-12-31 | 2020-12-31 | Electrostatic protection circuit of output pin |
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| CN112838849A true CN112838849A (en) | 2021-05-25 |
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| CN202011638052.3A Pending CN112838849A (en) | 2020-12-31 | 2020-12-31 | Electrostatic protection circuit of output pin |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036220A (en) * | 2012-04-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Electro spark detector (ESD) circuit protection structure |
| CN103378587A (en) * | 2012-04-28 | 2013-10-30 | 快捷半导体(苏州)有限公司 | Electrostatic discharge protection circuit and method, drive circuit and integrated circuit |
| CN107369672A (en) * | 2016-05-12 | 2017-11-21 | 瑞昱半导体股份有限公司 | ESD protection circuit |
| CN108306271A (en) * | 2018-01-08 | 2018-07-20 | 北京智芯微电子科技有限公司 | A kind of power clamp ESD protective circuit |
| CN111277260A (en) * | 2018-12-04 | 2020-06-12 | 三星电子株式会社 | Method for protecting integrated circuit, Schmitt trigger and electrostatic protection circuit |
-
2020
- 2020-12-31 CN CN202011638052.3A patent/CN112838849A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036220A (en) * | 2012-04-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Electro spark detector (ESD) circuit protection structure |
| CN103378587A (en) * | 2012-04-28 | 2013-10-30 | 快捷半导体(苏州)有限公司 | Electrostatic discharge protection circuit and method, drive circuit and integrated circuit |
| CN107369672A (en) * | 2016-05-12 | 2017-11-21 | 瑞昱半导体股份有限公司 | ESD protection circuit |
| CN108306271A (en) * | 2018-01-08 | 2018-07-20 | 北京智芯微电子科技有限公司 | A kind of power clamp ESD protective circuit |
| CN111277260A (en) * | 2018-12-04 | 2020-06-12 | 三星电子株式会社 | Method for protecting integrated circuit, Schmitt trigger and electrostatic protection circuit |
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Application publication date: 20210525 |
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