CN112838346A - Power amplifier substrate and spatial power synthesizer - Google Patents
Power amplifier substrate and spatial power synthesizer Download PDFInfo
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- CN112838346A CN112838346A CN202011642582.5A CN202011642582A CN112838346A CN 112838346 A CN112838346 A CN 112838346A CN 202011642582 A CN202011642582 A CN 202011642582A CN 112838346 A CN112838346 A CN 112838346A
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- power amplifier
- amplifier substrate
- substrate
- power
- waveguide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
Abstract
The invention discloses a power amplifier substrate for a waveguide structure power amplifier, a space power synthesis device for a rectangular waveguide and a space power synthesis device for a coaxial waveguide. The power amplifier substrate is of a plate-shaped structure and is provided with a hollow cavity, and the hollow cavity is filled with a microporous structure grid and a liquid phase change medium. By adopting the power amplifier substrate disclosed by the invention, heat can be conducted and released in the plane or curved surface range of the power amplifier substrate as soon as possible. The power amplifier substrate is applied to a rectangular waveguide power amplifier and a coaxial waveguide power amplifier which are combined by space power, and the heat dissipation effect of the power amplifier based on the space power combination technology is improved.
Description
Technical Field
The invention relates to the technical field of power amplifiers, in particular to a power amplifier substrate and a spatial power synthesis device.
Background
Compared with the planar power synthesis technology, the spatial power synthesis technology has the remarkable advantages that the synthesis efficiency is not reduced along with the increase of devices, and therefore, the circuit loss is smaller and the output of larger power can be realized.
However, the heat dissipation of the power amplifier based on the spatial power combining technology is a technical problem that is difficult to solve — the heat of the power amplifier based on the spatial power combining technology cannot be directly transferred to a heat sink like a planar power amplifier, and the heat transfer path is also long, so that the heat dissipation effect is not ideal.
Disclosure of Invention
The invention mainly aims to provide a power amplifier substrate and a spatial power synthesis device so as to improve the heat dissipation effect of a power amplifier based on a spatial power synthesis technology.
According to a first aspect of embodiments of the present invention, there is provided a power amplifier substrate for a waveguide structure power amplifier. The power amplifier substrate is of a plate-shaped structure and is provided with a hollow cavity, and the hollow cavity is filled with a microporous structure grid and a liquid phase change medium.
Furthermore, the material of the micropore structure grid is copper.
Further, the liquid phase change medium includes any one of water, alcohol and liquid ammonia.
Furthermore, the power amplifier base plate is also provided with a liquid injection port for embedding the liquid phase-change medium, wherein the liquid injection port is of a cylindrical structure and is protruded from the side surface of the power amplifier base plate.
Further, the side surface provided with the liquid injection port is a first side surface, the first side surface is obliquely intersected with the adjacent second side surface, and the first side surface is also obliquely intersected with the adjacent third side surface.
Furthermore, the power amplifier substrate is also bonded with a power amplifier chip, and a reinforcing rib structure is arranged on the periphery of the position where the power amplifier chip is bonded with the power amplifier substrate.
Further, the reinforcing rib structure comprises a convex reinforcing rib and a stepped reinforcing rib.
Furthermore, the front and the back of the power amplifier substrate are both provided with a reinforcing rib structure.
According to a second aspect of embodiments of the present invention, there is provided a spatial power combining apparatus of a rectangular waveguide. The space power synthesis device of the rectangular waveguide comprises a power amplifier in a laminated form, wherein the power amplifier is sequentially laminated with five layers of planar plate structures, namely a first power amplifier substrate, a second power amplifier substrate, a partition plate, a third power amplifier substrate and a fourth power amplifier substrate, and the second power amplifier substrate and the third power amplifier substrate are power amplifier substrates for the waveguide structure power amplifier according to any one of the technical schemes.
According to a third aspect of embodiments of the present invention, there is provided a spatial power combining apparatus of a coaxial waveguide. The space power synthesis device of the coaxial waveguide comprises at least two cylindrical power amplifiers formed by splicing an even number of fan-column-shaped power amplifier substrates, the cross section of each fan-column-shaped power amplifier substrate is fan-shaped, the fan-column-shaped power amplifier substrates are extended to be columnar, and the fan-column-shaped power amplifier substrates are also the power amplifier substrates for the waveguide structure power amplifiers according to any one of the technical schemes.
The technical scheme provided by the embodiment of the invention at least has the following beneficial effects: the interior of the power amplifier substrate is changed into a hollow structure, and the micropore structure grids and the liquid phase change medium are filled. By means of the vaporization of the liquid phase-change medium, the liquefied gas-liquid phase change and the capillary action of the micropore structure grid, heat can be conducted and released in the plane or curved surface range of the power amplifier substrate as soon as possible. The power amplifier substrate is applied to a rectangular waveguide power amplifier and a coaxial waveguide power amplifier which are combined by space power, and the heat dissipation effect of the power amplifier based on the space power combination technology can be improved.
Drawings
Fig. 1 is a schematic structural view (perspective view) of a power amplifier substrate for a waveguide-structured power amplifier according to an embodiment of the present invention;
FIG. 2 is a front view of FIG. 1;
FIG. 3(a) is a sectional view taken along line B-B of FIG. 2;
FIG. 3(b) is a schematic enlarged view of a portion of the C position in FIG. 3 (a);
FIG. 4 is a rear view of FIG. 1;
fig. 5 is a schematic structural diagram of a spatial power combining apparatus for a rectangular waveguide according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a spatial power combining apparatus for coaxial waveguides in an embodiment of the present invention.
In the figure, 121-a liquid injection port, 122-a first side face, 123-a second side face, 124-a third side face, 125-a raised reinforcing rib, 127-a microporous structure grid and 128-a liquid phase-change medium;
10-a rectangular waveguide power amplifier, 110-a first power amplifier substrate, 120-a second power amplifier substrate, 130-a third power amplifier substrate, 140-a fourth power amplifier substrate and 150-a clapboard;
20-coaxial waveguide power amplifier, 210-fan column power amplifier substrate.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. The technical solutions between the embodiments of the present invention may be combined with each other, but should be based on the realization of those skilled in the art.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", and "left", "right", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the term "connected" is to be interpreted broadly, and may be, for example, a fixed connection and a movable connection, a detachable connection and a non-detachable connection, or an integral connection; may be mechanically or electrically connected or may be in communication with each other. And "fixedly connected" includes detachably connected, non-detachably connected, integrally connected, and the like.
The use of terms like "first" or "second" in this disclosure are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance or implicit to the technical feature indicated.
The following text describes the improvement of the power amplifier substrate according to the embodiment of the present invention by taking the power amplifier substrate of the power amplifier with a rectangular waveguide structure as an example, but this does not mean that the power amplifier substrate according to the embodiment of the present invention is only applicable to the power amplifier with a rectangular waveguide structure.
Fig. 1 shows a power amplifier substrate for a waveguide structure power amplifier. The power amplifier substrate is of a plate-shaped structure. Referring to fig. 3(a) and fig. 3(b), the power amplifier substrate has a housing, and the housing is a hollow cavity filled with a cellular structure grid 127 and a liquid phase change medium 128.
The conventional power amplifier of the spatial power combiner, especially the power amplifier of the spatial power combiner with a rectangular waveguide structure, mostly has a multi-card structure. The multi-card structure is that a plurality of power amplifier substrates are laminated in sequence. The two substrates on the two sides of the outermost periphery are thicker, so that the heat dissipation is relatively better; however, the back surface of the inner substrate at the position where the chip is bonded is generally required to be hollowed out so as to avoid the substrates on both sides of the outermost periphery, and thus is a relatively thin position. However, the heating position of the power amplifier substrate corresponds to the relatively thin position, which forms a heat dissipation bottleneck. Therefore, the heat dissipation problem of the power amplifier of the conventional spatial power combining device needs to be solved.
The hollow cavity chamber of the power amplifier substrate is filled with a micropore structure grid and a liquid phase change medium. The heat is conducted to a certain area of the hollow cavity by a chip and other heat sources on the power amplifier substrate, and the liquid phase-change medium in the hollow cavity is easy to generate the phenomenon of vaporization. During the vaporization process, the liquid phase-change medium absorbs heat and changes phase into gas state, and the volume expands rapidly, and the gas phase-change medium fills the hollow cavity chamber quickly. When a gaseous phase change medium encounters a relatively cold region, condensation to a liquid state (i.e., liquefaction) occurs. The heat accumulated during evaporation is released in the condensation process, and the condensed liquid phase-change medium is changed into liquid phase-change medium again, and the liquid phase-change medium returns to the heat source again through the capillary action of the microporous structure grids. Then, the inside of the hollow cavity chamber repeats the two processes of the gas-liquid phase change repeatedly, and the heat is distributed uniformly, so that the heat dissipation effect of the power amplifier substrate is effectively improved.
The inventors conducted comparative experiments of thermal simulations for a power amplifier of a rectangular waveguide structure of a certain size. The result shows that the temperature difference of different positions on the traditional power amplifier substrate reaches 24.9 ℃, the highest temperature is 102 ℃, and the lowest temperature is 77.1 ℃, which indicates that the heat is not uniformly dissipated; the temperature difference of different positions on the power amplifier substrate adopting the technical scheme disclosed by the embodiment of the invention is only 6.6 ℃, the highest temperature is only 82.8 ℃, and the lowest temperature is 76.2 ℃, so that the heat dissipation effect is improved.
In addition, the liquid phase-change medium can easily flow to various positions of the hollow chamber without being influenced by the gravity effect by virtue of the capillary action of the microporous structure grid.
Further, in some embodiments, the material of the lattice 127 is copper, and the material of the casing of the power amplifier substrate is copper, aluminum alloy or stainless steel.
The copper material is suitable for preparing the microporous structure by copper powder sintering, copper mesh technology and other methods, has good copper adsorption performance, excellent heat conductivity and ductility, and is suitable for being used as the material of the microporous structure grid 127. It is understood that the lattice 127 of the micro-porous structure may be made of other materials with better performance of absorbing liquid phase-change medium.
Copper, aluminum alloy or stainless steel etc. have better heat conductivity and ductility, do benefit to the heat dissipation also convenient to process, therefore the material of suitable as the shell.
In some embodiments, the liquid phase change medium 128 includes any one of water, alcohol, and liquid ammonia. The medium such as water, alcohol, liquid ammonia and the like is easy to volatilize, so that the liquid phase-change medium is suitable for being used as a liquid phase-change medium, and can absorb and release heat in two phase-change processes of vaporization and liquefaction to realize heat transfer.
Referring to fig. 1, fig. 2 and fig. 4, in some embodiments, the power amplifier substrate is further provided with a liquid injection port 121 for encapsulating a liquid phase change medium, and the liquid injection port 121 is a cylindrical structure and protrudes from a side surface of the power amplifier substrate. The liquid injection port is formed in the side face, so that the operation of filling and sealing the liquid phase-change medium is facilitated, and the liquid injection port is arranged on the side face and can be matched with the filling and sealing device more conveniently.
Further, the side surface provided with the liquid injection port 121 is the first side surface 122, the first side surface 122 is obliquely intersected with the adjacent second side surface 123, and the first side surface 122 is also obliquely intersected with the adjacent third side surface 124, so that the space defined by the side envelope surface of the power amplifier substrate is reduced due to the existence of the first side surface 122, that is, the volume of the whole power amplifier substrate cannot be remarkably increased due to the convex arrangement of the liquid injection port.
In some embodiments, the power amplifier substrate is further bonded with a power amplifier chip. In order to prevent the surface structure deformation of the power amplifier substrate caused by the temperature change and the internal pressure change (the surface structure deformation of the power amplifier substrate has adverse effect on the reliability of the chip), the power amplifier substrate is provided with a reinforcing rib structure at the periphery of the position where the power amplifier chip is bonded. The rib structure helps to reduce the expansion deformation of the surface structure.
Further, referring to fig. 1, 2 and 4, the rib structure includes a raised rib 125 and a stepped rib (not shown). The convex structure is used as a common structure of the reinforcing rib, so that the deformation of the surface structure can be remarkably reduced; and the stepped reinforcing rib can reduce the deformation of the surface structure by setting a finer step height difference.
Further, referring to fig. 2 and fig. 4, the front surface and the back surface of the power amplifier substrate are both provided with a stiffener structure, so that the surface structural deformation of the power amplifier substrate is reduced.
The embodiment of the invention also applies the power amplifier substrate of any one of the embodiments to a space power synthesis device of a rectangular waveguide and a space power synthesis device of a coaxial waveguide respectively.
Referring to fig. 5, the rectangular waveguide spatial power combiner includes a stacked rectangular waveguide power amplifier 10 (fig. 5 only shows one of the components of the rectangular waveguide spatial power combiner: the rectangular waveguide power amplifier 10), and the rectangular waveguide power amplifier 10 is sequentially stacked with five layers of planar plate structures, such as a first power amplifier substrate 110, a second power amplifier substrate 120, a partition 150, a third power amplifier substrate 130, and a fourth power amplifier substrate 140, where the second power amplifier substrate 120 and the third power amplifier substrate 130 are power amplifier substrates for the waveguide structure power amplifier according to any one of the foregoing technical solutions. As described above, although the conventional rectangular waveguide power amplifier can achieve higher power output, the heat dissipation problem of the second power amplifier substrate and the third power amplifier substrate located in the middle is difficult to solve for a long time. The power amplifier substrate of the embodiment is applied to a space power synthesis device of a rectangular waveguide, so that the heat dissipation effect is improved while the output of higher power is realized.
Referring to fig. 6, the coaxial waveguide spatial power combiner includes at least two cylindrical coaxial waveguide power amplifiers 20 (fig. 6 only shows one of the components of the coaxial waveguide spatial power combiner: the coaxial waveguide power amplifiers 20) formed by splicing an even number of fan-shaped power amplifier substrates, the cross section of the fan-shaped power amplifier substrate 210 is fan-shaped, the fan-shaped power amplifier substrate 210 is extended to be columnar, and the fan-shaped power amplifier substrate 210 is also the power amplifier substrate for the waveguide structure power amplifier according to any one of the above technical solutions. As shown in fig. 6, the coaxial waveguide power amplifier 20 is formed by splicing 8 power amplifier substrates 210 in a sector-column shape.
Different from a space power synthesis device with a rectangular waveguide structure, a coaxial waveguide power amplifier is generally formed by splicing even number of power amplifier substrates with sector-shaped cross sections in a cylinder form, and the heat dissipation problem of the power amplifier substrates also needs to be solved. The power amplifier substrate of the embodiment is applied to the space power synthesis device of the coaxial waveguide, and obvious improvement of the heat dissipation effect is achieved.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A power amplifier base plate for waveguide structure power amplifier, the power amplifier base plate is plate structure, its characterized in that, the power amplifier base plate has well cavity room, it has microporous structure net and liquid phase change medium to fill in the cavity room.
2. The power amplifier substrate for a waveguide structure power amplifier as recited in claim 1, wherein the material of the lattice of the micro-holes structure is copper.
3. The power amplifier substrate for a waveguide structure power amplifier according to claim 1, wherein the liquid phase change medium includes any one of water, alcohol and liquid ammonia.
4. The power amplifier substrate for the waveguide-structured power amplifier according to claim 1, wherein the power amplifier substrate is further provided with a liquid injection port for encapsulating the liquid phase change medium, and the liquid injection port is of a cylindrical structure and protrudes from a side surface of the power amplifier substrate.
5. The power amplifier substrate for the waveguide-structured power amplifier according to claim 4, wherein the side surface provided with the liquid injection port is a first side surface, the first side surface obliquely intersects with an adjacent second side surface, and the first side surface also obliquely intersects with an adjacent third side surface.
6. The power amplifier substrate for the waveguide structure power amplifier according to claim 1, wherein a power amplifier chip is further bonded to the power amplifier substrate, and a reinforcing rib structure is disposed around a position where the power amplifier chip is bonded to the power amplifier substrate.
7. The power amplifier substrate for a waveguide structure power amplifier as claimed in claim 6, wherein the rib structure comprises a raised rib and a stepped rib.
8. The power amplifier substrate for the waveguide structure power amplifier according to claim 6, wherein the power amplifier substrate has a stiffener structure on both the front and back surfaces.
9. The spatial power synthesis device of the rectangular waveguide is characterized in that the spatial power synthesis device of the rectangular waveguide comprises a power amplifier in a laminated form, the power amplifier is sequentially laminated with five layers of planar plate-shaped structures, namely a first power amplifier substrate, a second power amplifier substrate, a partition plate, a third power amplifier substrate and a fourth power amplifier substrate, wherein the second power amplifier substrate and the third power amplifier substrate are the power amplifier substrates for the power amplifier of the waveguide structure according to any one of claims 1 to 8.
10. The device for synthesizing the spatial power of the coaxial waveguide is characterized in that the device for synthesizing the spatial power of the coaxial waveguide comprises a cylindrical power amplifier formed by splicing an even number of power amplifier substrates in a fan-shaped column shape, the even number is at least two, the cross section of each power amplifier substrate in the fan-shaped column shape is in a fan shape, the power amplifier substrate in the fan-shaped column shape is extended to be in a column shape, and the power amplifier substrate in the fan-shaped column shape is the power amplifier substrate for the power amplifier in the waveguide structure according to any one of claims 1 to 8.
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| CN202011642582.5A CN112838346A (en) | 2020-12-31 | 2020-12-31 | Power amplifier substrate and spatial power synthesizer |
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| CN202011642582.5A CN112838346A (en) | 2020-12-31 | 2020-12-31 | Power amplifier substrate and spatial power synthesizer |
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| CN112838346A true CN112838346A (en) | 2021-05-25 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201608A (en) * | 2010-03-25 | 2011-09-28 | 上海新杰芯微波技术有限公司 | Six-path synthesizer for synthesizing space power in Ku waveband waveguide |
| CN103413794A (en) * | 2013-08-16 | 2013-11-27 | 中国科学院深圳先进技术研究院 | Radiating packaging structure of semiconductor power device |
| CN105611791A (en) * | 2015-11-05 | 2016-05-25 | 中国电子科技集团公司第四十一研究所 | High-efficiency heat radiation system suitable for large-power space synthesis amplifier |
| CN206272920U (en) * | 2016-08-31 | 2017-06-20 | 维沃移动通信有限公司 | A kind of circuit board structure and mobile terminal |
| CN209056603U (en) * | 2019-01-07 | 2019-07-02 | 任荣 | A kind of radio frequency antenna apparatus for mobile communication terminal |
| CN211019828U (en) * | 2019-12-24 | 2020-07-14 | 四川天和晟电子科技有限公司 | Power amplifier convenient to heat dissipation |
-
2020
- 2020-12-31 CN CN202011642582.5A patent/CN112838346A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201608A (en) * | 2010-03-25 | 2011-09-28 | 上海新杰芯微波技术有限公司 | Six-path synthesizer for synthesizing space power in Ku waveband waveguide |
| CN103413794A (en) * | 2013-08-16 | 2013-11-27 | 中国科学院深圳先进技术研究院 | Radiating packaging structure of semiconductor power device |
| CN105611791A (en) * | 2015-11-05 | 2016-05-25 | 中国电子科技集团公司第四十一研究所 | High-efficiency heat radiation system suitable for large-power space synthesis amplifier |
| CN206272920U (en) * | 2016-08-31 | 2017-06-20 | 维沃移动通信有限公司 | A kind of circuit board structure and mobile terminal |
| CN209056603U (en) * | 2019-01-07 | 2019-07-02 | 任荣 | A kind of radio frequency antenna apparatus for mobile communication terminal |
| CN211019828U (en) * | 2019-12-24 | 2020-07-14 | 四川天和晟电子科技有限公司 | Power amplifier convenient to heat dissipation |
Non-Patent Citations (1)
| Title |
|---|
| 王淑波等: "《化工原理》", 31 January 2019 * |
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Application publication date: 20210525 |