CN112836386B - Novel total dose simulation method and single particle coupling simulation method and device thereof - Google Patents
Novel total dose simulation method and single particle coupling simulation method and device thereof Download PDFInfo
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Abstract
The invention discloses a novel total dose simulation method, a single particle coupling simulation method and a single particle coupling simulation device, wherein the novel total dose simulation method comprises the following steps: modeling an anti-Radiation device by using an SDE of a Sentaurus software of a TCAD tool to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file; and performing simulation study on total dose by using the activated Radiation model. The invention adopts the activated Radiation model to simulate the total dose TID effect, and is more accurate, so that the coupling research of the total dose TID effect and single event is more accurate.
Description
Technical Field
The invention belongs to the technical field of radiation resistance of semiconductor devices, and particularly relates to a novel total dose simulation method and a single particle coupling simulation method and device thereof.
Background
With the rapid development of national aerospace technology and the gradual maturing of Silicon-On-Insulator (SOI) technology application, the advantages of SOI devices over bulk Silicon devices are gradually revealed, and more aerospace technologies employ SOI devices.
The SOI device has the advantages of natural latch-up resistance, much smaller parasitic capacitance than bulk silicon, faster speed and the like because of the existence of the Buried Oxide layer, but the existence of the Buried Oxide layer (BOX) also greatly weakens the total dose effect resistance of the device, and meanwhile, the existence of the Buried Oxide isolates the substrate, so that the Body area of the device is reduced, the pulse current of the single event effect is weakened, but the single event effect sensitive position is changed along with the smaller SOI size, and the single event upset threshold value is also reduced, thereby bringing new irradiation resistance problem. For the researches on the total dose effect and the single event effect, the irradiation experiment and the simulation research based on TCAD are mainly adopted at present, the experiment irradiation equipment and the environment are limited at present, the total dose irradiation experiment can be only carried out in China, the gamma cobalt 60 irradiation is generally carried out, and the single event experiment can only study the turning section and the like of the device after the single event incidence, so that the transient pulse current of the single event can not be measured. In the past simulation based on TID, fixed charges and trap charges are added in an oxide layer for simulation, but because the irradiation environment of a real device is generally in various bias states (on state, off state, transmission state and zero state), hole electron pairs and the distribution thereof generated by the total dose effect in different bias states are different according to different bias voltages, the fixed charges and the trap charges cannot simulate the total dose effect in each bias state, and the simulation method has great randomness. Therefore, research on a novel TID simulation method based on TCAD is very necessary. Meanwhile, in the actual space radiation environment, the device works under the influence of various ionizing radiation effects. The TID effect is a continuous accumulation process in the actual irradiation environment, and mainly affects the basic electrical characteristics of the device, so that the TID effect is poor, the time often passes for a long time (thousands of seconds), the single event effect mainly affects the logic function of the device by generating pulse current through particles striking the target material, so that the logic of the device is inverted, the process usually has picoseconds and nanoseconds, and the transient current pulse of the Single Event Transient (SET) has very small influence on the TID effect and can disappear soon due to the transient current. The conventional TID effect can cause the electrical characteristics of the device to be poor, and can influence the generation of transient current and a charge collection mechanism of the SET effect, so that the essence of the TID and SEE coupling effect is the influence of the TID effect on the SEE effect. The total dose effect causes a large number of positive hole traps to be generated in the buried oxide layer, thereby influencing the current pulse change generated by the drain electrode caused by the single event effect of the device. However, due to the limitation of experimental environment, the coupling research can only be performed through the simulation of TCAD, and the total dose effect (simulated by a Radiation model) and the single event effect (simulated by a Heayion model) are required to be added for joint simulation to perform the coupling mechanism research. Because the simulation method of the TID is to strengthen fixed charge, the previous research on the coupling mechanism of single particles and total dose is to simulate the TID by adopting the fixed charge, and then to add a heavy ion model for simulating the single particles.
However, the conventional Radiation model for studying total dose effect in Sentaurus (TCAD tool) is directed to SiO 2 Are not functional and therefore cannot perform total dose (TID) simulation on TCAD-based devices; since the heavy ion model Heayion is able to select bias state studies, the robust fixed charge analog TID is unable to select bias states (its charge distribution is typically selected to be uniform). It can be seen that the existing total dose (TID) and single event (SEE) are under different bias conditions, making the existing total dose to single event coupling study incorrect and meaningless.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a novel total dose simulation method and a single particle coupling simulation method and device thereof.
One embodiment of the present invention provides a novel total dose simulation method, comprising:
modeling an anti-Radiation device by using an SDE of a Sentaurus software of a TCAD tool to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file;
and performing simulation study on total dose by using the activated Radiation model.
In one embodiment of the invention, activating the Radiation model using the modified parameter file includes:
use of "novel oxide semiconductor materials" instead of SiO 2 ；
Changing the content of the parameter file of the novel oxide semiconductor material into SiO 2 Is a parameter file content of (1);
and adding a Radiation model to the Physics part of the first Sdevice to activate the Radiation model.
In one embodiment of the invention, the study of the total dose includes the study of the total dose at different bias conditions, different irradiation dose rates, different irradiation doses.
Another embodiment of the present invention provides a novel total dose and single particle coupling simulation method, including:
performing total dose simulation by using the novel total dose simulation method according to any one of the above;
the electrical characteristics and the physical characteristics after the total dose simulation are stored in a first Sdevice, and the postfix names of the stored files of the electrical characteristics and the physical characteristics are a sav file and a tdr file respectively;
importing the saved sav File and the saved tdr File into a File part in a second Sdevice for single-particle simulation of the heavyIon model;
and adding a TID simulation result into the File part to serve as a second Sdevice of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particle.
In one embodiment of the invention, the Solve end part in the first Sdevice of the total dose simulation uses the Plot statement and the Save statement to Save the electrical and physical properties after the total dose simulation.
In one embodiment of the present invention, importing the saved sav File and the saved tdr File into the File portion in the second Sdevice for single-particle simulation of the heavion model includes:
the File part in the second Sdevice of the single particle simulation of the HeavyIon model replaces the File of Grid and Doping with a tdr File;
the File part in the second Sdevice of the single particle simulation is subjected to the heavyIon model, and the total dose is simulated by using a Load statement.
In one embodiment of the invention, the research on the coupling mechanism of the total dose and the single particle comprises the research on the simulation of the coupling effect of the single particle by the total dose under different bias states, different irradiation dose rates and different irradiation doses.
In one embodiment of the invention, the study summarises that the total dose and single event coupling mechanism also includes the coincidence of the device bias state at total dose irradiation and the device bias state at single event.
Yet another embodiment of the present invention provides a novel total dose and single event coupling simulation apparatus, comprising:
a first data simulation module for performing total dose simulation using the novel total dose simulation method of any one of claims 1 to 3;
the data storage processing module is used for storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, wherein the postfix names of the stored files of the electrical characteristics and the physical characteristics are respectively a sav file and a tdr file;
the data importing processing module is used for importing the saved sav File and the saved tdr File into a File part in a second Sdevice for single-particle simulation of the HeavyIon model;
and the second data simulation module is used for adding a TID simulation result into the File part to serve as a second Sdevice of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particle.
Compared with the prior art, the invention has the beneficial effects that:
the novel total dose simulation method provided by the invention adopts the activated Radiation model to simulate the total dose TID effect, and is more accurate, so that the coupling research of the total dose TID effect and single event is more accurate.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a flow chart of a novel total dose simulation method provided by an embodiment of the present invention;
FIG. 2 is a detailed simulation flow diagram of a novel total dose simulation method provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a modeled structure of NFET (a) and PFET (b) provided by an embodiment of the invention;
FIGS. 4 (a) -4 (h) are graphs showing radiation generation profiles of NFET and PFET at 0.4nm below the y=0 plane BOX and channel interface, respectively, for NFET (a) (b) (c) and PFET (d) (e) (f) irradiated conditions (g) at different biases provided by embodiments of the present invention;
FIGS. 5 (a) -5 (h) are graphs showing radiation generation profiles of NFETs and PFETs at 1nm to the left at the interface of the x=0 plane STI and the channel, respectively, for the cases (g) of irradiation of NFET (a) (b) (c) and PFET (d) (e) (f) under different biases provided by embodiments of the present invention;
FIG. 6 is a schematic diagram of the transfer characteristics of the linear region (a) and the saturation region (b) of a device provided by an embodiment of the present invention after different total dose radiation in the off state;
FIG. 7 is a schematic diagram of a method for solving the incompatibility of a Radiation model (for simulating TID) and a HeavyIon model (for simulating SEE) simulation step sizes, which is provided by the embodiment of the invention;
FIG. 8 is a flow chart of a novel total dose and single event coupling effect simulation method provided by an embodiment of the present invention;
FIG. 9 is a schematic diagram of the coupling results of different total doses and single particles in the OFF state (OFF) of an NFET device according to an embodiment of the invention;
fig. 10 is a schematic structural diagram of a novel total dose and single particle coupling effect simulation device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, fig. 1 is a flow chart of a novel total dose simulation method according to an embodiment of the invention. The embodiment provides a novel total dose simulation method, which comprises the following steps:
and step 1, modeling an anti-Radiation device by using an SDE of a TCAD tool Sentaurus software to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file.
Specifically, in this embodiment, the irradiation-resistant device modeling is performed by using the SDE of the Sentaurus software as a TCAD tool to obtain a three-dimensional device structure for irradiation-resistant research, and the Radiation model is activated by using a modified parameter file, specifically: in the simulation of TID, all oxide layer materials (SiO 2 ) Replacement with "novel oxide semiconductor material", replication of SiO 2 The parameter file content of the "novel oxide semiconductor material" is replaced, and a Radiation model is added to the Physics part of the first Sdevice, so as to simulateThe Radiation model of TID effect was activated for simulation of total dose TID. Referring to fig. 2, fig. 2 is a detailed simulation flow chart of a novel total dose simulation method according to an embodiment of the present invention, where the embodiment realizes the simulation of total dose TID based on the TCAD tool Sentaurus software.
And 2, performing simulation study on total dose by using the activated Radiation model.
Specifically, the embodiment is based on activating the Radiation model in step 1 to study the TID effect based on TCAD, and can study TID effects under different irradiation doses, different irradiation dose rates, different irradiation time nodes and different device bias states (on state, off state, transmission state, zero state).
In order to illustrate the effectiveness of the novel total dose and single event coupling effect simulation method provided by the embodiment, 22nm FDSOI total dose simulation is performed, specifically:
1. simulation software
Sentaurus (TCAD tool)
2. Simulation device
Lattice core 22nm FDSOI, N-type FDSOI and P-type FDSOI with width-to-length ratio of 0.08um/0.02 um.
3. Simulation conditions
First set of simulations: investigation of the worst bias state of the total dose irradiation against the BOX layer, dose rate was 200krad (SiO 2 ) Irradiation time of 2000s, i.e.total dose of 400krad (SiO 2 )；
Second set of simulations: investigation of the worst bias state of the total dose irradiation for the STI layer, dose rate was 200krad (SiO 2 ) Irradiation time of 2000s, i.e.total dose of 400krad (SiO 2 )；
Third set of simulations: the effect of different total doses in the off state on the transfer characteristics of the device was studied, with a dose rate of 200krad (SiO 2 ) Irradiation times of 500s, 1000s, 2000s, respectively, i.e. total doses of 100krad (SiO) 2 )、200krad(SiO 2 )、400krad(SiO 2 )。
4. Simulation process
Width ratio using lattice 22nm FDSOINFETs and PFETs of 0.08um/0.02um were modeled and calibrated for total dose TID simulation with a device standard operating voltage of 0.8V, and modeled device sizes all from the process manufacturer. According to the novel total dose simulation method of the embodiment, firstly, total dose TID simulation is carried out on NFET and PFET, all oxide parts in the built SDE command file are required to be replaced by 'novel oxide semiconductor materials', and then the content of the 'novel oxide semiconductor materials' parameter file is replaced by SiO 2 In this way, the doping of the material structure of the device is not affected, but the self-carried Radiation model of the TCAD is activated, and simulation of the transfer characteristics of NFET and PFET at different total doses in the off state is performed by using the model, please refer to fig. 3, fig. 3 is a schematic diagram of the modeling structure of NFET (a) and PFET (b) provided by the embodiment of the present invention.
5. Simulation results and analysis
Emulation one
Referring to fig. 4 (a) to fig. 4 (h), fig. 4 (a) to fig. 4 (h) are schematic diagrams showing radiation generation rate distribution of NFET and PFET at 0.4nm below the interface between the BOX and the channel at y=0 plane respectively under different bias conditions (g) and PFET (d) (e) (f) provided by the embodiments of the present invention, and as can be seen from simulation results of fig. 4 (a) to fig. 4 (h), for the study of BOX layer after total dose irradiation, the radiation generation rate of NFET and PFET is maximum in the transmission state (TG). Thus, whether NFET or PFET, it is the transmission state (TG) for the worst bias state of the buried oxide layer (BOX) at the same total dose of radiation.
Emulation II
Referring to fig. 5 (a) to 5 (h), fig. 5 (a) to 5 (h) are schematic diagrams of radiation generating rate distribution of NFETs and PFETs at the boundary surface between the STI and the channel at the left 1nm under different bias conditions (g) and (h) respectively, and as can be seen from simulation results of fig. 5 (a) to 5 (h), for the study of the STI layer after total dose irradiation, the radiation generating rates of the NFETs and PFETs are all the largest in the ON state (ON). Thus, whether NFET or PFET, it is ON for the worst bias state of the STI layer at the same total dose of radiation.
Simulation three
Referring to fig. 6, fig. 6 is a schematic diagram showing transfer characteristics of the linear region (a) and the saturated region (b) of the device after different total dose irradiation in the off state according to the embodiment of the present invention, and as can be seen from the simulation result of fig. 6, when the device is selected to operate in the off state, as the total dose increases, the transfer characteristics of both the NFET and PFET devices drift negatively, and the threshold voltage of the device decreases (the threshold voltage of the PFET is negative).
In summary, the novel total dose simulation method provided by the embodiment adopts the Radiation model after activation to study the TID effect more comprehensively and reasonably. The existing method for researching the total dose TID by using fixed charges and trapped charges by the mainstream cannot research the TID effect under each bias state, cannot set the irradiation dose rate and irradiation time, and has great randomness for the density and distribution of the added fixed charges; according to the embodiment, the TID effect under each bias state can be researched by using the activated Radiation model, the irradiation dose rate and irradiation time can be set, the worst bias state is analyzed, and the method is closer to a real irradiation scene, for example, the method can be used for evaluating the irradiation resistance of an aerospace microelectronic device, so that the problems of lack of irradiation experimental environment and high experimental cost are solved.
Example two
On the basis of the first embodiment, please refer to fig. 7, fig. 7 is a flow chart of a novel total dose and single event coupling effect simulation method provided by the embodiment of the present invention, and the embodiment provides a novel total dose and single event coupling effect simulation method, which includes the following steps:
step 1, performing total dose simulation by using the novel total dose simulation method according to any one of the above embodiments.
Specifically, the simulation of the total dose implementation in this embodiment adopts the simulation result of the novel total dose simulation method described in the first embodiment, which is not described herein.
And 2, storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, wherein the suffix names of the stored files of the electrical characteristics and the physical characteristics are respectively a. Sav file and a. Tdr file.
Specifically, in simulating the coupling effect of the TID effect and the SEE effect, the activated Radiation model (for simulating the TID) and the HeavyIon model (for simulating the SEE) are put into the same Sdevice as required, but since the TID effect is a process with long duration, the general research is thousands of seconds, and the SEE effect occurs in picosecond order, the two are different in order of magnitude by 10 in time 15 Thus, in the simulation process, in the case of the interaction of the Radiation model and the HeavyIon model, too large a difference in the model steps may cause the simulation to not converge. Referring to fig. 7, fig. 7 is a schematic diagram of a method for solving the incompatibility of a Radiation model (for simulating TID) and a heavion model (for simulating SEE) in simulation step sizes, according to the embodiment of the present invention, based on the above problem, the present embodiment proposes that the Radiation model and the heavion model are respectively put into two sdevices to perform simulation, that is, the present embodiment stores the electrical characteristics and the physical characteristics after the total dose simulation in step 1 in a first Sdevice: and storing the electrical characteristics and the physical characteristics of the device after TID simulation by using a Plot statement and a Save statement at the end part of the solution in the first Sdevice of the total dose simulation, wherein the two files after TID simulation of the device are respectively a sav file and a tdr file under the combined action of the two statements, and the two files respectively represent the electrical characteristics and the physical characteristic changes after TID simulation.
And step 3, importing the saved sav File and the saved tdr File into a File part in a second Sdevice for simulating single particles by the heavion model.
Specifically, the sav File and the tdr File after the TID simulation is completed are imported into a File part in a second Sdevice for single-event simulation of the HeavyIon model, wherein the File part is divided into two parts, namely input files and output files, respectively, and the specific method is that:
input files contain: the method comprises the steps of grid= "@ tdr@, parameter=" @ parameter@and dopping= "@ tdr@in three parts, wherein a tdr file input by Grid and dopping is defaulted in general, and the tdr file is from a" snmesh. Tdr "file of an SDE lower node of a device structure generated in the front, and the tdr file contains information such as the geometric structure and Doping of the device; and Parameter inputs a par file representing a material Parameter file for the device.
The output files contain: current= "@ Plot @" Plot = "@ tdrdat @, output =" @ log @. The log file comprises a physical model and corresponding parameter values, and the file also contains error information; the postfix of the Plot file is named as a plt, and contains the electrical characteristics (transfer characteristics and the like) of the device.
The tdr File after TID simulation is replaced with Grid and ping of the File part in the second Sdevice for simulating SEE through the method, and meanwhile, the embodiment utilizes Load statement to import the sav File after TID simulation into the File part in the second Sdevice.
And 4, adding a TID simulation result to the File part as a second Sdevice of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particle.
Specifically, in this embodiment, a TID simulation result is added to the File portion in the second Sdevice in step 3 as an initial condition to perform single-event simulation, so as to study the coupling mechanism of the total dose and the single-event effect under each bias state. Specifically: the research on the coupling mechanism of the total dose and the single particle comprises the research on the simulation of the coupling effect of the single particle by the total dose under different bias states, different irradiation dose rates and different irradiation doses, and the research summarizes the bias state of the device when the total dose irradiates and the bias state of the device when the single particle acts when the total dose and the single particle coupling mechanism are consistent.
In order to illustrate the effectiveness of the novel total dose and single event coupling effect simulation method provided in the present embodiment, based on the novel total dose simulation in the above embodiment:
simulation conditions: the coupling effect of different total doses and single particles under the off state is studied, and the dose rate is 200krad (SiO 2 ) Irradiation times of 1000s, 2000s, 3000s, respectively, i.e. corresponding total doses of 200krad (SiO) 2 )、400krad(SiO 2 )、600krad(SiO 2 ). The single particle incidence position is the center of the grid, the single particle incidence characteristic radius is 5nm, and the LET valueIs 0.06pC/um. The simulation process was used to simulate the total dose and single event Sdevice, with the devices all biased in the OFF condition.
Simulation process: according to the invention, the coupling mechanism with single particles under different total doses is simulated, firstly, a Radiation model is utilized to carry out TID simulation, finally, a Plot statement and Save are used for storing the electrical information and the physical information (Doping distribution after irradiation and the like) of the device after irradiation with different total doses in the Sdevice, then, the stored. Sav File and the. Tdr File are imported into the File part of the Sdevice for simulating the SEE, the Grid and the tdr File of the Doping in the File are replaced, and the Load statement is used for loading the. Sav File. Then, the simulation of the coupling effect of the total dose and the single particles is carried out.
Referring to fig. 9, fig. 9 is a schematic diagram of the coupling result of different total doses and single event of the NFET device in the OFF state (OFF), and as can be seen from the coupling simulation result of the total dose TID and the single event of fig. 7, the TID effect affects the pulse peak value and the pulse width of the single event transient current, and as the TID effect is aggravated, the single event pulse peak value is enlarged, but the pulse width is reduced, and the total dose TID is well coupled with the single event.
In summary, the novel total dose and single event coupling effect simulation method provided in this embodiment adopts a novel total dose TID simulation manner, so that the simultaneous action research of the total dose TID and the single event coupling mechanism of the activated Radiation model (for simulating the total dose TID) and the HeavyIon model (for simulating the event) is more reasonable. The existing method for researching the coupling mechanism of the total dose TID and the single-particle SEE is to add a HeavyIon model to research the influence of the TID on the SEE in the existing method for researching the TID effect (a fixed charge method), and the method for researching the total dose TID has defects, so that the coupling research of the total dose TID and the single-particle SEE also has problems, and the coupling mechanism of the total dose TID and the single-particle SEE under different biases cannot be researched; according to the embodiment, the TID effect is simulated by adopting the activated Radiation model, so that the coupling research of the TID effect and the single event is more accurate, but because the step sizes of the two models in the simulation are too large, the simulation is carried out in two different Sdevices, the Sdevice of the total dose TID is simulated first, then the Sdevice result of the total dose TID is imported into the Sdevice of the single event for corresponding setting, and the coupling mechanism of the total dose TID and the single event under different biases can be researched by the method provided by the embodiment, so that the Radiation-resistant research requirement of the aerospace field is met.
The novel total dose and single event coupling effect simulation method provided in this embodiment may be implemented as the novel total dose simulation method embodiment described in the above embodiment, and its implementation principle and technical effects are similar, and will not be described herein again.
Example III
On the basis of the second embodiment, please refer to fig. 10, fig. 10 is a schematic structural diagram of a novel total dose and single event coupling effect simulation device provided by the embodiment of the present invention, and the present embodiment provides a novel total dose and single event coupling effect simulation device, which includes:
a first data simulation module for performing a total dose simulation using the novel total dose simulation method as described in any one of the embodiments.
Specifically, the simulation of the total dose by the novel total dose simulation method in the first data simulation module in this embodiment includes:
modeling an anti-Radiation device by using an SDE of a Sentaurus software of a TCAD tool to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file;
and performing simulation study on total dose by using the activated Radiation model.
Further, the activating the Radiation model by using the modification parameter file in the present embodiment includes:
use of "novel oxide semiconductor materials" instead of SiO 2 ；
Changing the content of the parameter file of the novel oxide semiconductor material into SiO 2 Is a parameter file content of (1);
and adding a Radiation model to the Physics part of the first Sdevice to activate the Radiation model.
Further, the study of the total dose of the present embodiment includes the study of the total dose under different bias conditions, different irradiation dose rates, different irradiation doses.
And the data storage processing module is used for storing the electrical characteristics and the physical characteristics after the total dose simulation in the first Sdevice, wherein the suffix names of the stored files of the electrical characteristics and the physical characteristics are respectively the sav file and the tdr file.
Specifically, in the data saving processing module of this embodiment, the Solve ending part in the first Sdevice of the total dose simulation uses the Plot statement and the Save statement to Save the electrical characteristics and the physical characteristics after the total dose simulation.
And the data importing processing module is used for importing the saved sav File and the saved tdr File into a File part in a second Sdevice for simulating single particles by the heavion model.
Specifically, the data importing processing module of the present embodiment imports the saved sav File and the saved tdr File into the File portion in the second Sdevice for simulating the single particle by the heavion model includes:
the File part in the second Sdevice of the single particle simulation of the HeavyIon model replaces the File of Grid and Doping with a tdr File;
the File part in the second Sdevice of the single particle simulation is subjected to the heavyIon model, and the total dose is simulated by using a Load statement.
And the second data simulation module is used for adding a TID simulation result into the File part to serve as a second Sdevice of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particle.
Specifically, the research on the coupling mechanism of the total dose and the single particle in the second data simulation module of the embodiment includes the research on the simulation of the coupling effect of the single particle by the total dose under different bias states, different irradiation dose rates and different irradiation doses.
Further, the study of the embodiment summarizes that the total dose and single event coupling mechanism also comprises that the bias state of the device when the total dose is irradiated is consistent with the bias state of the device when the single event acts.
The novel total dose and single event coupling effect simulation device provided in this embodiment may perform the novel total dose simulation method embodiment described in the first embodiment and the novel total dose and single event coupling effect simulation method embodiment described in the second embodiment, and its implementation principle and technical effect are similar, and will not be described here again.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (8)
1. A novel total dose simulation method, comprising:
modeling an anti-Radiation device by using an SDE of a Sentaurus software of a TCAD tool to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file; wherein the activating the Radiation model with the modification parameter file includes: use of "novel oxide semiconductor material" instead of SiO for BOX layer 2 The method comprises the steps of carrying out a first treatment on the surface of the Changing the content of the parameter file of the novel oxide semiconductor material into SiO 2 Is a parameter file content of (1); adding a Radiation model to the Physics part of the first Sdevice to activate the Radiation model;
and performing simulation study on total dose by using the activated Radiation model.
2. The novel total dose simulation method of claim 1, wherein the study of total dose comprises the study of total dose under different bias conditions, different irradiation dose rates, different irradiation doses.
3. The novel total dose and single particle coupling simulation method is characterized by comprising the following steps of:
performing a total dose simulation using the novel total dose simulation method of any one of claims 1-2;
the electrical characteristics and the physical characteristics after the total dose simulation are stored in a first Sdevice, and the postfix names of the stored files of the electrical characteristics and the physical characteristics are a. Sav file and a. Tdr file respectively;
importing the saved sav File and the saved tdr File into a File part in a second Sdevice for single-particle simulation of the heavyIon model;
and adding a TID simulation result into the File part to serve as a second Sdevice of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particle.
4. The novel total dose and single event coupled simulation method of claim 3, wherein the Solve ending part in the first Sdevice of the total dose simulation uses Plot statement and Save statement to Save the electrical and physical properties after the total dose simulation.
5. The novel total dose and single event coupling simulation method of claim 3, wherein importing the saved sav File and tdr File into the File portion in the second device for single event simulation of the HeavyIon model comprises:
the File part in the second Sdevice of the single particle simulation of the HeavyIon model replaces the File of Grid and Doping with a tdr File;
the File part in the second Sdevice of the single particle simulation is subjected to the heavyIon model, and the total dose is simulated by using a Load statement.
6. The novel total dose and single event coupling simulation method according to claim 3, wherein the research on the coupling mechanism of the total dose and the single event comprises the research on the simulation of the coupling effect of the single event by the total dose under different bias states, different irradiation dose rates and different irradiation doses.
7. The novel total dose and single event coupling simulation method of claim 3, wherein the study summarizes the total dose and single event coupling mechanism further comprising a device bias state at total dose irradiation consistent with a device bias state at single event.
8. A novel total dose and single event coupling simulation device, comprising:
a first data simulation module for performing total dose simulation by using the novel total dose simulation method according to any one of claims 1 to 2;
the data storage processing module is used for storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, wherein the postfix names of the stored files of the electrical characteristics and the physical characteristics are respectively a sav file and a tdr file;
the data importing processing module is used for importing the saved sav File and the saved tdr File into a File part in a second Sdevice for single-particle simulation of the HeavyIon model;
and the second data simulation module is used for adding a TID simulation result into the File part to serve as a second Sdevice of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particle.
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