CN112836386A - Novel total dose simulation method and single-particle coupling simulation method and device - Google Patents
Novel total dose simulation method and single-particle coupling simulation method and device Download PDFInfo
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Abstract
The invention discloses a novel total dose simulation method and a single-particle coupling simulation method and device thereof, wherein the novel total dose simulation method comprises the following steps: carrying out anti-Radiation device modeling by using SDE of a TCAD tool Sentaurus software to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file; and (5) carrying out simulation research on total dose by using the activated Radiation model. The method adopts the activated Radiation model to simulate the TID effect of the total dose, and is more accurate, so that the study on the coupling of the TID effect and the SEE is more accurate.
Description
Technical Field
The invention belongs to the technical field of radiation resistance of semiconductor devices, and particularly relates to a novel total dose simulation method and a single-particle coupling simulation method and device.
Background
With the rapid development of the national aerospace technology and the gradual maturity of the application of Silicon-On-Insulator (SOI) technology, the advantages of SOI devices compared with bulk Silicon devices are gradually shown, and more aerospace technologies adopt SOI devices.
The SOI device has the advantages of natural anti-latch-up effect capability, much smaller parasitic capacitance than bulk silicon, higher speed and the like due to the existence of the Buried Oxide layer, but the existence of the Buried Oxide layer (BOX) greatly weakens the total dose effect resistance of the device, and simultaneously although the existence of the Buried Oxide layer isolates the substrate, the Body area of the device is reduced, so that the pulse current of the single event effect is weakened, the single event effect sensitive position changes along with the smaller and smaller SOI size, and the single event upset threshold value also becomes smaller, so that a new anti-irradiation problem is brought. For the research of the total dose effect and the single event effect, at present, an irradiation experiment and simulation research based on TCAD are mainly adopted, and are limited by experimental irradiation equipment and environment at present, the irradiation experiment of the total dose can be only carried out in China, generally gamma-cobalt 60 irradiation is carried out, and the single event experiment can only be used for researching a device after single event incidence, such as an overturning section and the like, and the transient pulse current of the single event cannot be measured. In the past, TID-based simulation is performed by adding fixed charges and trapped charges in an oxide layer, but because the irradiation environment of a real device is generally in various bias states (on state, off state, transmission state and zero state), the hole electron pairs and the distribution thereof generated by the total dose effect under different bias states are different along with different bias voltages, the fixed charges and the trapped charges can not simulate the total dose effect under each bias state, and great randomness is achieved. Therefore, research of a novel TID simulation method based on TCAD is very necessary. Meanwhile, in the actual space radiation environment, the device works under the influence of various ionizing radiation effects. Because in the actual irradiation environment, the TID effect is a continuous accumulation process, which mainly affects the basic electrical characteristics of the device and makes the device become worse, the time is often long (several thousands of seconds), while the single event effect mainly affects the logic function of the device by the pulse current generated by the particles striking the target material, which causes the logic inversion of the device, the process is usually only picosecond and nanosecond level, and the TID effect is very little affected by the transient current pulse of the Single Event Transient (SET), and the TID effect disappears quickly due to the transient current. The existing TID effect can cause the electrical characteristics of the device to be poor, and the transient current generation and charge collection mechanism which can affect the SET effect are affected, so the essence of the TID and SEE coupling effect is the influence of the TID effect on the SEE effect. The total dose effect causes a large number of positive hole traps to be generated in the buried oxide layer, so that the current pulse change generated by the drain electrode caused by the single event effect of the device is influenced. However, due to the limitation of experimental environment, the coupling research can only be performed by simulation of TCAD, and the total dose effect (simulation by Radiation model) and the single event effect (simulation by HeayIon model) are both added to perform the joint simulation for the coupling mechanism research. Because the TID simulation method is to strengthen the fixed charge, the previous research on the coupling mechanism of the single particles and the total dose also adopts the strengthened fixed charge to simulate the TID, and then a heavy ion model simulating the single particles is added.
However, the Radiation model for studying the total dose effect in the existing Sentaurus (TCAD tool) is on SiO2Do not work, so total dose (TID) simulations cannot be performed on TCAD based devices; since the heavy ion model HeayIon can select bias state research, the reinforced fixed charge analog TID cannot select bias state (the charge distribution thereof is generally uniformly distributed). It can be seen that the existing total dose (TID) and single event (SEE) are under different bias conditions, making the existing total dose and single event coupling studies incorrect and meaningless.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a novel total dose simulation method and a single-particle coupling simulation method and device thereof.
One embodiment of the present invention provides a novel total dose simulation method, including:
carrying out anti-Radiation device modeling by using SDE of a TCAD tool Sentaurus software to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file;
and (5) carrying out simulation research on total dose by using the activated Radiation model.
In one embodiment of the present invention, activating the Radiation model using the modified parameter file comprises:
use of "novel oxide semiconductor materials" instead of SiO2；
Changing the content of the parameter file of the novel oxide semiconductor material into SiO2The parameter file content of (2);
the Radiation model is added to the Physics section of the first Sdvice to activate the Radiation model.
In one embodiment of the invention, the study of the total dose comprises a study of the total dose at different bias states, different irradiation dose rates, different irradiation doses.
Another embodiment of the present invention provides a novel total dose and single particle coupling simulation method, including:
carrying out total dose simulation by using the novel total dose simulation method;
storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, wherein the suffix names of the stored files of the electrical characteristics and the physical characteristics are an sav file and a tdr file respectively;
importing the saved sav File and tdr File into a File part in a second Sdevice for the HeavIon model to simulate the single event;
and adding a TID simulation result into the File part as a second Sd event of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particles.
In one embodiment of the invention, the Solve ending part in the first Sdvice of the total dose simulation uses Plot statement and Save statement to Save the electrical and physical characteristics after the total dose simulation.
In an embodiment of the present invention, importing the saved sav File and tdr File into a File part in a second Sdevice for single event simulation by the heavylon model includes:
replacing files of Grid and Doping into files of tdr in a File part in a second Sdevice of the single-event simulation by the HeavIon model;
and (4) simulating the total dose by using a Load statement on a File part in the second Sdevice of the single-particle simulation by using a HeavIon model.
In an embodiment of the present invention, the study on the coupling mechanism of the total dose and the single particle includes study on simulation of the coupling effect of the total dose on the single particle under different bias states, different irradiation dose rates, and different irradiation doses.
In one embodiment of the invention, the study of the total dose and single-particle coupling mechanism further includes that the bias state of the device under total dose irradiation is consistent with the bias state of the device under single-particle action.
Another embodiment of the present invention provides a novel total dose and single particle coupled simulation apparatus, including:
a first data simulation module for performing total dose simulation by using the novel total dose simulation method according to any one of claims 1 to 3;
the data storage processing module is used for storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, and the suffix names of the stored files of the electrical characteristics and the physical characteristics are an sav file and a tdr file respectively;
the data import processing module is used for importing the saved sav File and tdr File into a File part in a second Sdevice for single event simulation by the HeavIon model;
and the second data simulation module is used for performing single-particle simulation on the second Sdevice with the TID simulation result added to the File part as the initial simulation condition so as to research the coupling mechanism of the total dose and the single particle.
Compared with the prior art, the invention has the beneficial effects that:
the novel total dose simulation method provided by the invention adopts the activated Radiation model to simulate the TID effect of the total dose, and is more accurate, so that the study on the coupling of the TID effect and the SEE is more accurate.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic flow chart of a novel total dose simulation method provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a detailed simulation flow of a novel total dose simulation method provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of modeled structures of NFET (a) and PFET (b) provided by an embodiment of the present invention;
fig. 4(a) -4 (h) are schematic diagrams of the radiation yield distributions of the NFET (a), (b), (c) and PFET (d), (e), (f) under different biases of the NFET and PFET (g) (h) at y ═ 0 plane BOX and channel interface 0.4nm below;
fig. 5(a) -5 (h) are schematic diagrams of the radiation yield distributions of the NFET (a), (b), (c) and PFET (d), (e), (f) under different bias conditions (g) (h) at x-0 plane STI and channel interface at left 1nm for the NFET and PFET, respectively;
FIG. 6 is a schematic diagram of transfer characteristics of a linear region (a) and a saturation region (b) after irradiation of a device provided by an embodiment of the invention at different total doses in an off state;
FIG. 7 is a schematic diagram illustrating a method for solving the incompatibility between simulation step sizes of a Radiation model (for simulating TID) and a HeavIon model (for simulating SEE), according to an embodiment of the present invention;
FIG. 8 is a schematic flow chart of a novel total dose and single event coupling effect simulation method according to an embodiment of the present invention;
FIG. 9 is a graph illustrating the results of different total dose and single event coupling for an NFET device in the OFF state (OFF) provided by an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a novel total dose and single event coupling effect simulation apparatus provided in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic flow chart of a novel total dose simulation method according to an embodiment of the present invention. The embodiment provides a novel total dose simulation method, which comprises the following steps:
Specifically, in this embodiment, the TCAD tool Sentaurus software is used to perform modeling of the anti-Radiation device to obtain a three-dimensional device structure for anti-Radiation research, and the Radiation model is activated by using a modified parameter file, specifically: in the process of simulating TID, SD in Sentaurus softwareAll oxide layer materials (SiO) in E-modeled devices2) By replacing with "new oxide semiconductor material", reproducing SiO2Replacing the file content of the parameter file of the novel oxide semiconductor material, and adding a Radiation model into the Physics part of the first Sdovice, so that the Radiation model simulating the TID effect is activated and used for simulating the total dose TID. Referring to fig. 2, fig. 2 is a detailed simulation flowchart of the novel total dose simulation method provided in the embodiment of the present invention, and the embodiment of the present invention realizes the simulation of the total dose TID based on the Sentaurus software of the TCAD tool.
And 2, carrying out simulation research on the total dose by using the activated Radiation model.
Specifically, in this embodiment, based on activating the Radiation model in step 1, the TID effect based on the TCAD is studied, and the TID effect under different irradiation doses, different irradiation dose rates, different irradiation time nodes, and different device bias states (on-state, off-state, transmission state, and zero state) can be studied.
To illustrate the effectiveness of the novel total dose and single-particle coupling effect simulation method provided by this embodiment, 22nm FDSOI total dose simulation is performed, specifically:
simulation software
Sentaurus (TCAD tool)
Second, simulation device
Lattice core 22nm FDSOI, N type FDSOI and P type FDSOI with width-length ratio of 0.08um/0.02 um.
Third, simulation conditions
The first group of simulations: study Total dose irradiation for worst bias state of BOX layer, dose rate of 200krad (SiO)2) Radiation time 2000s, i.e. total dose of 400krad (SiO)2)；
The second group of simulations: study of the worst bias state of total dose irradiation for STI layer with a dose rate of 200krad (SiO)2) Radiation time 2000s, i.e. total dose of 400krad (SiO)2)；
And a third group of simulations: the effect of different total doses on the transfer characteristics of the device in the off state was studied, and the dose rate was 200krad(SiO2) The irradiation time is 500s, 1000s and 2000s respectively, namely the total dose is 100krad (SiO)2)、200krad(SiO2)、400krad(SiO2)。
Fourth, simulation process
NFET and PFET modeling and calibration with a width-to-length ratio of 0.08um/0.02um were performed using a lattice 22nm FDSOI, which was subjected to total dose TID simulation, with a standard device operating voltage of 0.8V, and with modeled device dimensions all from the process vendor. According to the novel total dose simulation method of the embodiment, total dose TID simulation is firstly carried out on NFET and PFET, the oxide part in the established SDE command file needs to be completely replaced by 'novel oxide semiconductor material', and then the content of the 'novel oxide semiconductor material' parameter file is replaced by SiO2So that the doping of the material structure of the device itself is not affected, but the Radiation model of the TCAD self-strip is activated, and the model is used to simulate the transfer characteristics of the NFET and the PFET under different total doses in the off state, please refer to fig. 3, where fig. 3 is a schematic diagram of the modeling structures of the NFET (a) and the PFET (b) provided by the embodiment of the present invention.
Fifth, simulation result and analysis
Simulation one
Referring to fig. 4(a) -4 (h), fig. 4(a) -4 (h) are schematic diagrams of the radiation yield distribution of the NFET and the PFET at 0.4nm below the BOX and channel interface in the y-0 plane respectively under irradiation conditions (g) (h) under different biases, and as can be seen from the simulation results of fig. 4(a) -4 (h), for the study of the BOX layer after total dose irradiation, the radiation yield of both the NFET and the PFET is the largest in the transmission state (TG). Thus, the worst bias state for the buried oxide layer (BOX) is the transport state (TG) under the same total dose of irradiation, regardless of NFET or PFET.
Simulation two
Referring to fig. 5(a) to 5(h), fig. 5(a) to 5(h) are schematic diagrams of the radiation yield distribution of the NFET and the PFET at the x 0 plane STI and channel interface at the left 1nm in the irradiation condition (g) under different biases, respectively, and it can be seen from the simulation results of fig. 5(a) to 5(h) that the radiation yield of the NFET and the PFET is the largest in the ON state (ON) for the STI layer study after total dose irradiation. Thus, whether NFET or PFET, the worst bias state for the STI layer is ON (ON) at the same total dose of irradiation.
Simulation III
Referring to fig. 6, fig. 6 is a schematic diagram illustrating transfer characteristics of a linear region (a) and a saturation region (b) of a device provided by an embodiment of the present invention after irradiation with different total doses in an off state, and it can be seen from simulation results in fig. 6 that when the select device is operated in the off state, as the total dose is increased, the transfer characteristics of both NFET and PFET devices shift negatively, and the threshold voltage of the device decreases (the PFET threshold voltage is negative).
In summary, the novel total dose simulation method provided by this embodiment is more comprehensive and reasonable in TID effect research by using the activated Radiation model. The existing mainstream adopted method for researching the total dose TID by using the fixed charges and the trapped charges can not research the TID effect under each bias state, can not set the irradiation dose rate and the irradiation time, and has great randomness for the density and the distribution of the added fixed charges; the method can utilize the activated Radiation model to research the TID effect under each bias state, can set the irradiation dose rate and irradiation time, analyzes the worst bias state, is closer to a real irradiation scene, and can be used for evaluating the irradiation resistance of a space microelectronic device, so as to solve the problems of lack of irradiation experiment environment and high experiment cost.
Example two
On the basis of the first embodiment, please refer to fig. 7, where fig. 7 is a schematic flow chart of a simulation method of a novel total dose and single event coupling effect according to an embodiment of the present invention, and this embodiment provides a simulation method of a novel total dose and single event coupling effect, where the simulation method of a novel total dose and single event coupling effect includes the following steps:
Specifically, the simulation of the total dose in this embodiment uses the simulation result of the novel total dose simulation method described in the first embodiment, which is not described herein again.
And 2, storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, wherein the suffix names of the stored files of the electrical characteristics and the physical characteristics are a.sav file and a.tdr file respectively.
Specifically, when a TID effect and an SEE effect are simulated to be coupled, an activated Radiation model (for simulating TID) and a HeavIon model (for simulating SEE) are put into the same Sdevice according to a conventional requirement, but because the TID effect is a process with long duration, the TID effect is in thousands of seconds in general research, while the SEE effect occurs in picoseconds, and the magnitude of the two time is different by 1015Therefore, in the simulation process, under the condition that the Radiation model and the HeavIon model act together, the step length difference of the two models is too large, so that the simulation is not converged. Referring to fig. 7, fig. 7 is a schematic diagram illustrating a method for solving the incompatibility between the simulation step sizes of the Radiation model (for simulating TID) and the HeavyIon model (for simulating SEE), which is provided by the embodiment of the present invention, and based on the above problem, the present embodiment proposes to put the Radiation model and the HeavyIon model into two sdevices respectively for simulation, that is, the present embodiment saves the electrical characteristics and the physical characteristics after the total dose simulation of step 1 in the first Sdevice, specifically: and storing the electrical characteristics and the physical characteristics after the total dose simulation by using a Plot statement and a Save statement at the Solve ending part in the first Sdevice of the total dose simulation, wherein under the combined action of the Plot statement and the Save statement, two files after the device TID simulation are stored, namely an sav file and a tdr file, and the two files respectively represent the changes of the electrical characteristics and the physical characteristics after the TID simulation.
And 3, importing the saved sav File and tdr File into a File part in a second Sdevice for single event simulation by the HeavIon model.
Specifically, the method includes the steps of importing a sav File and a tdr File which are saved after TID simulation is completed into a File part in a second Sdevice used for the HeavIon model to simulate a single event, and specifically, dividing the File part into two parts, namely an input File and an output File, wherein:
input files contains: the method comprises three parts of '@ tdr' @ with a Grid ', a Parameter' @ ', and a Doping' @ tdr '@', wherein the Grid and the Doping are input in a default mode generally, tdr files are from 'snmesh.tdr' files of SDE lower nodes of the device structure generated in the front, and the tdr files contain information of the geometric structure, Doping and the like of the device; and the Parameter inputs are the par file, which represents the material Parameter file of the device.
output files contains: current @ Plot @ ", Plot @ tdrdat @", Output @ log @ ". Wherein, the log file comprises the adopted physical model and corresponding parameter values, and the file also comprises error information; the Plot file suffix is.
The TID-simulated tdr File replaces the Grid and Doping of the File part in the second Sd device for simulating the SEE by the method, and meanwhile, the TID-simulated sav File is led into the File part in the second Sd device by using a Load statement.
And 4, adding a TID simulation result into the File part as a second Sd event of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particles.
Specifically, in this embodiment, a TID simulation result is added to a File part in the second Sdevice in step 3 as an initial condition to perform single-particle simulation, and a coupling mechanism of a total dose and a single-particle effect in each offset state is studied. Specifically, the method comprises the following steps: the study on the coupling mechanism of the total dose and the single particle comprises the study on the simulation of the single particle coupling effect of the total dose under different bias states, different irradiation dose rates and different irradiation doses, and the study summarizes that the bias state of the device under the irradiation of the total dose and the bias state of the device under the action of the single particle when the total dose and the single particle coupling mechanism are summarized.
To illustrate the effectiveness of the novel total dose and single-event coupling effect simulation method provided by this embodiment, on the basis of the novel total dose simulation of the above embodiment:
simulation conditions are as follows: different total doses and single doses in study off-stateCoupling effect of the particles, dose rate 200krad (SiO)2) The irradiation time is 1000s, 2000s and 3000s respectively, namely the corresponding total dose is 200krad (SiO)2)、400krad(SiO2)、600krad(SiO2). The single particle incidence position is the center of the grid, the characteristic radius of the single particle incidence is 5nm, and the LET value is 0.06 pC/um. The simulation process is used to simulate the Sbevice of the total dose and the single particle, and all the devices are biased under the OFF-state (OFF) condition.
And (3) simulation process: according to the invention, the coupling mechanism with the single particles under different total doses is simulated, TID simulation is carried out by using a Radiation model, Plot statements and Save are used for storing the electrical information and the physical information (Doping distribution after irradiation and the like) of the device after irradiation with different total doses at the end of Sdvevice, then the stored sav files and tdr files are led into the File part of Sdvevice used for simulating SEE, Grid and Doping tdr files in the File are replaced, and the sav files are loaded by using Load statements. Then, the simulation of the total dose and the single particle coupling effect is carried out.
Referring to fig. 9, fig. 9 is a schematic diagram of coupling results of different total doses and single-event of the NFET device in an OFF state (OFF), and it can be seen from the coupling simulation result of the total dose TID and the single-event SEE in fig. 7 that the TID effect affects the pulse peak value and the pulse width of the single-event transient current, and as the TID effect is increased, the single-event pulse peak value is increased, but the pulse width is decreased, so that the total dose TID and the single-event SEE are well coupled.
In summary, the novel total dose and single-event coupling effect simulation method provided by this embodiment adopts a new total dose TID simulation mode, so that it is more reasonable to study the coupling mechanism of the total dose TID and the single-event SEE by simultaneously acting the activated Radiation model (for simulating the total dose TID) and the heavion model (for simulating the SEE). The existing mode for researching the coupling mechanism of the total dose TID and the single-particle SEE is to add a HeavIon model to research the influence of the TID on the SEE in the existing mode (reinforced charge method) for researching the TID effect, and because the method for researching the total dose TID has defects, the coupling research of the total dose TID and the single-particle SEE also has problems, and the coupling mechanism of the total dose TID and the single-particle SEE under different biases cannot be researched; in the embodiment, the activated Radiation model is adopted to simulate the TID effect, so that the TID effect is more accurate, the study on the coupling between the TID effect and the single-particle SEE is more accurate, but the step length difference of the two models in simulation is too large, so that the two models are put into two different Sdevice, the Sdevice of the total dose TID is simulated firstly, then the Sdevice result of the total dose TID is led into the Sdevice of the single-particle SEE to be correspondingly set, and the method provided by the embodiment can study the coupling mechanism between the total dose TID and the single-particle SEE under different biases, so that the requirement of the Radiation resistance study in the aerospace field is met.
The novel total dose and single-particle coupling effect simulation method provided by this embodiment may be implemented in the embodiment of the novel total dose simulation method described in the first embodiment, and the implementation principle and the technical effect are similar, and are not described herein again.
EXAMPLE III
On the basis of the second embodiment, please refer to fig. 10, where fig. 10 is a schematic structural diagram of a novel total dose and single event coupling effect simulation apparatus provided in an embodiment of the present invention, and this embodiment provides a novel total dose and single event coupling effect simulation apparatus, including:
the first data simulation module is used for performing total dose simulation by using the novel total dose simulation method according to any one of the embodiments.
Specifically, the simulation of the total dose by the novel total dose simulation method in the first data simulation module of this embodiment includes:
carrying out anti-Radiation device modeling by using SDE of a TCAD tool Sentaurus software to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file;
and (5) carrying out simulation research on total dose by using the activated Radiation model.
Further, the present embodiment of activating the Radiation model by modifying the parameter file includes:
use of "novel oxide semiconductor materials" instead of SiO2；
Changing the content of the parameter file of the novel oxide semiconductor material into SiO2The parameter file content of (2);
the Radiation model is added to the Physics section of the first Sdvice to activate the Radiation model.
Further, the study of the total dose in this embodiment includes the study of the total dose under different bias states, different irradiation dose rates, and different irradiation doses.
And the data saving processing module is used for saving the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, and the suffix names of the saved files of the electrical characteristics and the physical characteristics are the sav file and the tdr file respectively.
Specifically, in the data saving processing module of the present embodiment, the Plot statement and the Save statement are used at the end of the Save in the first Sdevice of the total dose simulation to Save the electrical characteristics and the physical characteristics after the total dose simulation.
And the data import processing module is used for importing the saved sav File and tdr File into a File part in a second Sdevice for the HeavIon model to simulate the single event.
Specifically, importing, in the data import processing module of this embodiment, the saved sav File and tdr File into the File part in the second Sdevice for single event simulation by the HeavyIon model includes:
replacing files of Grid and Doping into files of tdr in a File part in a second Sdevice of the single-event simulation by the HeavIon model;
and (4) simulating the total dose by using a Load statement on a File part in the second Sdevice of the single-particle simulation by using a HeavIon model.
And the second data simulation module is used for performing single-particle simulation on the second Sdevice with the TID simulation result added to the File part as the initial simulation condition so as to research the coupling mechanism of the total dose and the single particle.
Specifically, the study on the coupling mechanism of the total dose and the single particle in the second data simulation module of this embodiment includes a study on the single particle coupling effect simulation of the total dose under different bias states, different irradiation dose rates, and different irradiation doses.
Further, the study of the embodiment summarizes the total dose and the single-particle coupling mechanism, and the bias state of the device during total dose irradiation is consistent with the bias state of the device during single-particle action.
The novel total dose and single event coupling effect simulation apparatus provided in this embodiment may implement the embodiments of the novel total dose simulation method described in the first embodiment and the novel total dose and single event coupling effect simulation method described in the second embodiment, and the implementation principle and the technical effect thereof are similar and will not be described herein again.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A novel total dose simulation method is characterized by comprising the following steps:
carrying out anti-Radiation device modeling by using SDE of a TCAD tool Sentaurus software to obtain a three-dimensional device structure for anti-Radiation research, and activating a Radiation model by using a modified parameter file;
and (5) carrying out simulation research on total dose by using the activated Radiation model.
2. The novel total dose simulation method of claim 1, wherein activating the Radiation model using the modified parameter file comprises:
use of "novel oxide semiconductor materials" instead of SiO2；
Changing the content of the parameter file of the novel oxide semiconductor material into SiO2The parameter file content of (2);
the Radiation model is added to the Physics section of the first Sdvice to activate the Radiation model.
3. The novel total dose simulation method as claimed in claim 1, wherein the study of the total dose comprises study of the total dose under different bias conditions, different irradiation dose rates, and different irradiation doses.
4. A novel total dose and single particle coupling simulation method is characterized by comprising the following steps:
carrying out total dose simulation by using the novel total dose simulation method according to any one of claims 1 to 3;
storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, wherein the suffix names of the stored files of the electrical characteristics and the physical characteristics are an sav file and a tdr file respectively;
importing the saved sav File and tdr File into a File part in a second Sdevice for the HeavIon model to simulate the single event;
and adding a TID simulation result into the File part as a second Sd event of the initial simulation condition to perform single-particle simulation so as to study the coupling mechanism of the total dose and the single particles.
5. The novel total dose and single particle coupling simulation method according to claim 4, wherein the Plot statement and Save statement are used to Save the electrical and physical properties after the total dose simulation at the Solve ending part in the first Sdevice of the total dose simulation.
6. The novel total dose and single-particle coupling simulation method according to claim 4, wherein importing the saved sav File and tdr File into a File part in a second Sdevice for single-particle simulation by a HeavIon model comprises:
replacing files of Grid and Doping into files of tdr in a File part in a second Sdevice of the single-event simulation by the HeavIon model;
and (4) simulating the total dose by using a Load statement on a File part in the second Sdevice of the single-particle simulation by using a HeavIon model.
7. The novel total dose and single particle coupling simulation method according to claim 4, wherein the study on the coupling mechanism of the total dose and the single particle comprises the study on the single particle coupling effect simulation of the total dose under different bias states, different irradiation dose rates and different irradiation doses.
8. The novel total dose and single particle coupling simulation method according to claim 4, wherein the study of the summary total dose and single particle coupling mechanism further comprises that the bias state of the device during total dose irradiation is consistent with the bias state of the device during single particle action.
9. A novel total dose and single particle coupling simulation device is characterized by comprising:
a first data simulation module for performing total dose simulation by using the novel total dose simulation method according to any one of claims 1 to 3;
the data storage processing module is used for storing the electrical characteristics and the physical characteristics after the total dose simulation in a first Sdevice, and the suffix names of the stored files of the electrical characteristics and the physical characteristics are an sav file and a tdr file respectively;
the data import processing module is used for importing the saved sav File and tdr File into a File part in a second Sdevice for single event simulation by the HeavIon model;
and the second data simulation module is used for performing single-particle simulation on the second Sdevice with the TID simulation result added to the File part as the initial simulation condition so as to research the coupling mechanism of the total dose and the single particle.
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