CN112821868A - Control method of PL detection system - Google Patents
Control method of PL detection system Download PDFInfo
- Publication number
- CN112821868A CN112821868A CN202011629733.3A CN202011629733A CN112821868A CN 112821868 A CN112821868 A CN 112821868A CN 202011629733 A CN202011629733 A CN 202011629733A CN 112821868 A CN112821868 A CN 112821868A
- Authority
- CN
- China
- Prior art keywords
- picture
- detection
- laser
- detection picture
- camera
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000000241 photoluminescence detection Methods 0.000 title claims abstract description 17
- 238000001514 detection method Methods 0.000 claims abstract description 76
- 230000007547 defect Effects 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 abstract 1
- 238000005424 photoluminescence Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention relates to a control method of a PL detection system. It includes: the controller, laser subassembly and the image processing subassembly that the controller electricity is connected, the laser subassembly includes: the laser light source is used for irradiating the cell; the image processing assembly comprises an industrial camera and an image processor, and the control method comprises the following steps: when the laser light source is turned on, the industrial camera is controlled to be switched to a low-exposure mode and collect a first detection picture of the battery piece, when the laser light source is turned off, the industrial camera is controlled to be switched to a high-exposure mode and collect a second detection picture of the battery piece, when the industrial camera collects the first detection picture and the second detection picture, the first detection picture and the second detection picture are sent to the image processor, the image processor superposes and compounds the first detection picture and the second detection picture into a PL picture, and the synthesized PL picture can simultaneously display broken bars and other defects.
Description
Technical Field
The invention relates to a PL detection method of a battery piece, in particular to a control method of a PL detection system.
Background
In the solar cell industry, the crystalline silicon cell needs to be subjected to printing defect detection. The conventional detection method mainly comprises PL (Photoluminescence) and EL (xx; electroluminescence), wherein PL is an effective method for detecting raw materials, light with the forbidden bandwidth larger than that of a semiconductor silicon wafer is used as an excitation means to excite carriers in silicon, electrons in an excited state belong to a metastable state after a light source is removed, the electrons return to a ground state in a short time, photons with the wavelength of 1100nm are released in the process, and the photons are captured by a sensitive CCD camera to obtain a radiation composite image of the silicon wafer. However, the conventional PL detection device still has insufficient precision on detecting poor printing of finished battery pieces, and is not easy to detect broken grid defects because the detected defects of the finished battery pieces are missed.
Disclosure of Invention
The invention provides a control method of a PL detection system; the problem that a battery fragment grid cannot be detected in the prior art is solved.
The technical problem of the invention is mainly solved by the following technical scheme: a control method of a PL detection system, characterized by: the PL detection system comprises: the controller is electrically connected with the laser assembly and the image processing assembly;
the laser assembly includes: the laser light source is used for irradiating the cell;
the image processing component comprises an industrial camera and an image processor;
the industrial camera is provided with a high exposure mode and a low exposure mode which can be switched with each other;
the control method comprises the following steps: when the laser light source is started, laser irradiates on a battery piece with detection, the industrial camera is controlled to be switched to a low-exposure mode and collect a first detection picture of the battery piece, when the laser light source is closed, the industrial camera is controlled to be switched to a high-exposure mode and collect a second detection picture of the battery piece, when the industrial camera collects the first detection picture and the second detection picture, the first detection picture and the second detection picture are sent to the image processor, and the image processor superposes and compounds the first detection picture and the second detection picture into a PL picture.
The industrial camera has two shooting modes of a high exposure mode and a low exposure mode, for example, when laser is turned on, the brightness of a shooting environment is high, and in order to avoid overexposure, the shooting in the low exposure mode is needed; after the laser is turned off, the brightness of the shooting environment is low, the self luminescence of the photoluminescence phenomenon of the battery piece is weak, and in order to clearly shoot the luminescence phenomenon, the high exposure mode needs to be adopted for shooting. Correspondingly, the first detection picture obtained in the low exposure mode displays more details on the battery piece, such as broken grid defects, due to high shooting brightness; the photoluminescence display of the battery piece can be clearly shown by the second detection picture obtained in the high exposure mode, and the defects of the battery piece can be judged according to the light emitting condition. According to the invention, the first detection picture and the second detection picture are overlapped and compounded into one PL picture, so that various defects including grid breakage can be displayed simultaneously, and the detection effect is more accurate.
Further, the image processor includes: the video acquisition card is used for receiving the low exposure picture and the high exposure picture and converting the low exposure picture and the high exposure picture into data; and the upper computer is used for receiving the data of the video acquisition card and is electrically connected with the industrial camera, and the upper computer can be used for controlling the shooting of the industrial camera. The image output port of the industrial camera is in data connection with the video acquisition card, the upper computer is electrically connected with the industrial camera, and the shooting time and shooting parameters of the industrial camera can be controlled by the upper computer.
Further, the laser assembly further includes: and the laser controller is electrically connected with the laser light source and is used for controlling the on-off of the laser light source.
The invention further comprises a sensor and an industrial personal computer, wherein the sensor is used for sending an electric signal to the industrial personal computer when sensing the battery piece, and the industrial personal computer is used for receiving the electric signal of the sensor and sending the signal to the laser controller and the upper computer. The laser controller can control the laser light source to be opened and closed after receiving the signal of the industrial personal computer, the upper computer can control the industrial camera to shoot after receiving the signal of the industrial personal computer, and the industrial personal computer is used for controlling the industrial camera and the laser light source to synchronously operate
Further, the method for superposing and compositing the picture into a PL picture comprises the following steps: the method comprises the steps that corresponding standard sample pictures in two exposure modes are stored in the upper computer in advance, when the upper computer receives a first detection picture and a second detection picture processed by a video acquisition card, image software in the upper computer can automatically compare the first detection picture with a low exposure sample sheet and mark defects, the second detection picture with a high exposure sample sheet and mark defects, and finally the first detection picture and the second detection picture are combined into a PL picture to be output.
Further, the industrial camera is a line scan camera, the laser source is controlled by the laser controller, the on-off frequency of the laser source is 500HZ to 8000HZ, and the shooting principle of the line scan camera is as follows: the imaging of one-time scanning shooting is linear, multiple times of scanning shooting are needed, the linear graph is combined into a plane graph, a laser light source continuously flickers, each time when laser is turned on, the line scanning camera adopts a low exposure mode for shooting, each time when the laser is turned off, the line scanning camera adopts a high exposure mode for shooting, after the scanning is finished, the line scanning camera synthesizes all line scanning pictures obtained in the low exposure mode into a complete first detection picture, and synthesizes all line scanning pictures obtained in the high exposure mode into a complete second detection picture. The line scanning camera has a better imaging effect compared with a common industrial camera, is good at shooting objects in motion, and is more suitable for assembly line shooting operation.
Furthermore, the battery piece conveying device further comprises a conveying belt for conveying the battery pieces, and the moving speed of the conveying belt is 100-400 mm/s. The invention integrates the conveyor belt, which is consistent with the fact that the battery pieces are transported by the conveyor belt, so that the invention has good adaptability with the existing production line.
Further, the exposure time of the high exposure mode of the line scan camera is 800-2000 microseconds, and the exposure time of the low exposure mode is 80-150 microseconds. The exposure time is too long, the picture is overexposed, the exposure time is too short, the picture is too dark, and the exposure time is set reasonably so that a clear picture can be obtained.
Furthermore, the industrial camera is an indium gallium arsenic CCD camera, and the indium gallium arsenic CCD camera is one of line scan cameras. The defect type light of the cell excited by the laser is in the wavelength region of 808-. The general response wavelength range of the silicon material is from ultraviolet to about 1000nm, and the detection range of the indium gallium arsenic CCD camera is 800nm-1550nm, so that the silicon material is more suitable.
Furthermore, an optical filter with the wavelength of 900nm is arranged in front of the line scanning camera lens and used for filtering the influence of visible light.
Therefore, compared with the prior art, the invention has the following characteristics: 1. the invention shoots the battery pieces under different brightness through two exposure modes of high and low, and finally outputs a PL picture formed by synthesizing the first detection picture and the second detection picture, and the PL picture can simultaneously display various defects including broken grids, so that the detection is more accurate.
Drawings
Fig. 1 is a working principle diagram of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Through research, although small broken grid defects on the cell can be captured by a camera theoretically, the defects can be found only under the condition of extremely high contrast and low exposure, the phenomenon of photoluminescence of the cell cannot be observed under the environment, and corresponding defects cannot be found, namely, the shooting conditions required by different defects on the cell are mutually contradictory.
Example 1: referring to fig. 1, a control method of a PL detection system includes: the controller is electrically connected with the laser assembly and the image processing assembly;
the laser assembly includes: a laser light source 1 for irradiating the cell 7;
the image processing assembly comprises an industrial camera 2 and an image processor;
the industrial camera has a high exposure mode and a low exposure mode which can be switched with each other;
the control method comprises the following steps: when the laser light source is started, laser irradiates on a battery piece with detection, the industrial camera is controlled to be switched to a low-exposure mode and collect a first detection picture of the battery piece, when the laser light source is closed, the industrial camera is controlled to be switched to the high-exposure mode and collect a second detection picture of the battery piece, when the industrial camera collects the first detection picture and the second detection picture, the first detection picture and the second detection picture are sent to the image processor, and the image processor superposes and compounds the first detection picture and the second detection picture into a PL picture.
The industrial camera has two shooting modes of a high exposure mode and a low exposure mode, for example, when laser is turned on, the brightness of a shooting environment is high, and in order to avoid overexposure, the shooting in the low exposure mode is needed; after the laser is turned off, the brightness of the shooting environment is low, the self luminescence of the photoluminescence phenomenon of the battery piece is weak, and in order to clearly shoot the luminescence phenomenon, the high exposure mode needs to be adopted for shooting. Correspondingly, the first detection picture obtained in the low exposure mode displays more details on the battery piece, such as broken grid defects, due to high shooting brightness; the photoluminescence display of the battery piece can be clearly shown by the second detection picture obtained in the high exposure mode, and the defects of the battery piece can be judged according to the light emitting condition. According to the invention, the first detection picture and the second detection picture are overlapped and compounded into one PL picture, so that various defects can be displayed simultaneously, and the detection effect is more accurate.
Referring to fig. 1, the image processor includes: a video capture card 51 for receiving and converting low exposure pictures and high exposure pictures into data; and the upper computer 5 is used for receiving the data of the video acquisition card 51 and is electrically connected with the industrial camera, the upper computer can be used for controlling the shooting of the industrial camera, and the shooting time and the shooting parameters of the industrial camera can be controlled by the upper computer.
Referring to fig. 1, the laser module further includes: and the laser controller 11 is electrically connected with the laser light source and used for controlling the on and off of the laser light source.
Referring to fig. 1, the solar cell module further comprises a sensor 6 and an industrial personal computer 8, wherein the sensor 6 is used for sending an electric signal to the industrial personal computer when sensing a cell, and the industrial personal computer is used for receiving the electric signal of the sensor and sending the signal to the laser controller and the upper computer. The laser controller can control the laser light source to be opened and closed after receiving the signal of the industrial personal computer, the upper computer can control the industrial camera to shoot after receiving the signal of the industrial personal computer, and the industrial personal computer is used for controlling the industrial camera and the laser light source to synchronously operate
The method for superposing and compositing the picture into the PL picture comprises the following steps: the method comprises the steps that corresponding standard sample pictures in two exposure modes are stored in the upper computer in advance, when the upper computer receives a first detection picture and a second detection picture processed by a video acquisition card, image software in the upper computer can automatically compare the first detection picture with a low exposure sample sheet and mark defects, the second detection picture with a high exposure sample sheet and mark defects, and finally the first detection picture and the second detection picture are combined into a PL picture to be output.
The industrial camera is a line scan camera, the laser light source 1 is controlled by a laser controller, the on and off frequency of the laser light source is 500HZ to 8000Hz, and the shooting principle of the line scan camera is as follows: the imaging of one-time scanning shooting is linear, multiple times of scanning shooting are needed, the linear graph is combined into a plane graph, a laser light source continuously flickers, each time when laser is turned on, the line scanning camera adopts a low exposure mode for shooting, each time when the laser is turned off, the line scanning camera adopts a high exposure mode for shooting, after the scanning is finished, the line scanning camera synthesizes all line scanning pictures obtained in the low exposure mode into a complete first detection picture, and synthesizes all line scanning pictures obtained in the high exposure mode into a complete second detection picture. The line scanning camera has a better imaging effect compared with a common industrial camera, is good at shooting objects in motion, and is more suitable for assembly line shooting operation.
The battery piece conveying device is characterized by also comprising a conveying belt 3 for conveying battery pieces, wherein the moving speed of the conveying belt is 100-400 mm/s. The invention integrates the conveyor belt, which is consistent with the fact that the battery pieces are transported by the conveyor belt, so that the invention has good adaptability with the existing production line.
The exposure time of the high exposure mode of the line scan camera is 800-2000 microseconds, and the exposure time of the low exposure mode is 80-150 microseconds. The exposure time is too long, the picture is overexposed, the exposure time is too short, the picture is too dark, and the exposure time is set reasonably so that a clear picture can be obtained.
The industrial camera is an indium gallium arsenic CCD camera, and the indium gallium arsenic CCD camera is one of line scan cameras. The defect type light of the cell excited by the laser is in the wavelength region of 808-. The general response wavelength range of the silicon material is from ultraviolet to about 1000nm, and the detection range of the indium gallium arsenic CCD camera is 800nm-1550nm, so that the silicon material is more suitable.
Referring to fig. 1, a filter with a wavelength of 900nm is disposed in front of the lens of the line scan camera for filtering out the influence of visible light.
It will be obvious to those skilled in the art that the present invention may be varied in many ways, and that such variations are not to be regarded as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.
Claims (9)
1. A control method of a PL detection system, characterized by: the PL detection system comprises: the controller is electrically connected with the laser assembly and the image processing assembly;
the laser assembly includes: the laser light source is used for irradiating the cell;
the image processing component comprises an industrial camera and an image processor;
the industrial camera is provided with a high exposure mode and a low exposure mode which can be switched with each other;
the control method comprises the following steps: when the laser light source is started, laser irradiates on a battery piece with detection, the industrial camera is controlled to be switched to a low-exposure mode and collect a first detection picture of the battery piece, when the laser light source is closed, the industrial camera is controlled to be switched to a high-exposure mode and collect a second detection picture of the battery piece, when the industrial camera collects the first detection picture and the second detection picture, the first detection picture and the second detection picture are sent to the image processor, and the image processor superposes and compounds the first detection picture and the second detection picture into a PL picture.
2. A method of controlling a PL detection system as claimed in claim 1, wherein: the image processor includes: the video acquisition card is used for receiving the low exposure picture and the high exposure picture and converting the low exposure picture and the high exposure picture into data; and the upper computer is used for receiving the data of the video acquisition card and is electrically connected with the industrial camera, and the upper computer can be used for controlling the shooting of the industrial camera.
3. A method of controlling a PL detection system as claimed in claim 1 or 2, wherein: the laser assembly further includes: and the laser controller is electrically connected with the laser light source and is used for controlling the on-off of the laser light source.
4. A method of controlling a PL detection system as claimed in claim 3, wherein: further comprising: the battery piece is used for sensing the battery piece, the sensor is used for sending an electric signal to the industrial personal computer when the battery piece is sensed, and the industrial personal computer is used for receiving the electric signal of the sensor and sending the signal to the laser controller and the upper computer.
5. A method of controlling a PL detection system according to claim 4, wherein: the method for superposing and compositing the picture into the PL picture comprises the following steps: the method comprises the steps that corresponding standard sample pictures in two exposure modes are stored in the upper computer in advance, when the upper computer receives a first detection picture and a second detection picture processed by a video acquisition card, image software in the upper computer can automatically compare the first detection picture with a low exposure sample sheet and mark defects, the second detection picture with a high exposure sample sheet and mark defects, and finally the first detection picture and the second detection picture are combined into a PL picture to be output.
6. A method of controlling a PL detection system according to claim 5, wherein: the industrial camera is a line scan camera, the frequency of turning on and off the laser light source is 500HZ to 8000Hz, and the shooting principle of the line scan camera is as follows: the imaging of one-time scanning shooting is linear, multiple times of scanning shooting are needed, the linear graph is combined into a plane graph, a laser light source continuously flickers, each time when laser is turned on, the line scanning camera adopts a low exposure mode for shooting, each time when the laser is turned off, the line scanning camera adopts a high exposure mode for shooting, after the scanning is finished, the line scanning camera synthesizes all line scanning pictures obtained in the low exposure mode into a complete first detection picture, and synthesizes all line scanning pictures obtained in the high exposure mode into a complete second detection picture.
7. The method of claim 6, wherein: the battery piece conveying device further comprises a conveying belt for conveying battery pieces, and the moving speed of the conveying belt is 100-400 mm/s.
8. The method of claim 7, wherein: the exposure time of the high exposure mode of the line scan camera is 800-2000 microseconds, and the exposure time of the low exposure mode is 80-150 microseconds.
9. The method of claim 8, wherein: the industrial camera is an indium gallium arsenic CCD camera.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011629733.3A CN112821868A (en) | 2020-12-31 | 2020-12-31 | Control method of PL detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011629733.3A CN112821868A (en) | 2020-12-31 | 2020-12-31 | Control method of PL detection system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112821868A true CN112821868A (en) | 2021-05-18 |
Family
ID=75855106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011629733.3A Pending CN112821868A (en) | 2020-12-31 | 2020-12-31 | Control method of PL detection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112821868A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113092489A (en) * | 2021-05-20 | 2021-07-09 | 鲸朵(上海)智能科技有限公司 | System and method for detecting appearance defects of battery |
| CN113834816A (en) * | 2021-09-30 | 2021-12-24 | 江西省通讯终端产业技术研究院有限公司 | Machine vision-based photovoltaic cell defect online detection method and system |
| CN114705698A (en) * | 2022-06-02 | 2022-07-05 | 季华实验室 | Defect detection method, device, system and storage medium |
-
2020
- 2020-12-31 CN CN202011629733.3A patent/CN112821868A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113092489A (en) * | 2021-05-20 | 2021-07-09 | 鲸朵(上海)智能科技有限公司 | System and method for detecting appearance defects of battery |
| CN113834816A (en) * | 2021-09-30 | 2021-12-24 | 江西省通讯终端产业技术研究院有限公司 | Machine vision-based photovoltaic cell defect online detection method and system |
| CN114705698A (en) * | 2022-06-02 | 2022-07-05 | 季华实验室 | Defect detection method, device, system and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112821868A (en) | Control method of PL detection system | |
| CN107110782B (en) | Defect inspection method and defect inspection apparatus for wide band gap semiconductor substrate | |
| US8097857B2 (en) | Apparatus and method for providing snapshot action thermal infrared imaging within automated process control article inspection applications | |
| JP6131250B2 (en) | Method and apparatus for inspection of light emitting semiconductor devices using photoluminescence imaging | |
| US20110234790A1 (en) | Time resolved photoluminescence imaging systems and methods for photovoltaic cell inspection | |
| CN109478523B (en) | Defect inspection device for wide band gap semiconductor substrate | |
| TW201315990A (en) | Solar metrology methods and apparatus | |
| CN113632211B (en) | Inspection device and inspection method | |
| JP2016165221A (en) | Inspection system, power supply device, and inspection method | |
| JP2016019408A (en) | Inspection system, power supply device, photographing device, and inspection method | |
| CN116978806A (en) | Inspection device and inspection method | |
| CN111385447B (en) | Image pickup apparatus and driving method thereof | |
| TW201104909A (en) | Apparatus for inspecting photovoltaic power generating element | |
| CN214380818U (en) | PL detecting system and line scanning PL detecting equipment | |
| JP2008082922A (en) | Photographing device and cell observing device | |
| KR100861514B1 (en) | Photographing apparatus and method | |
| CN112986282A (en) | Inspection apparatus and inspection method | |
| EP1133168A2 (en) | Smart exposure determination for imagers | |
| Teo et al. | In-line photoluminescence imaging of crystalline silicon solar cells for micro-crack detection | |
| CN116087104A (en) | Scanning system and method for line scanning micro-distance camera | |
| CN115308170A (en) | Fluorescence image detection system and fluorescence detection method | |
| CN204596753U (en) | Detect the device of luminescent device colour mixture defect | |
| CN104122266B (en) | Solar silicon wafers high-speed line scanning photoluminescence imaging detection device | |
| KR100931859B1 (en) | Wafer Inspection Camera | |
| CN114706096A (en) | Short wave infrared optical system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |