CN112802812A - Heat sink and semiconductor device - Google Patents
Heat sink and semiconductor device Download PDFInfo
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- CN112802812A CN112802812A CN202110351598.9A CN202110351598A CN112802812A CN 112802812 A CN112802812 A CN 112802812A CN 202110351598 A CN202110351598 A CN 202110351598A CN 112802812 A CN112802812 A CN 112802812A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
- H01L23/445—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air the fluid being a liquefied gas, e.g. in a cryogenic vessel
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Abstract
The application provides a heat sink and a semiconductor device, which relate to the technical field of semiconductors and comprise a heat sink body, wherein a cavity is arranged in the heat sink body, a heat pipe microstructure is arranged in the cavity and is filled with phase-change liquid, one end of the heat sink is used for being immersed in cooling liquid, the other end of the heat sink is used for being connected with a heat source, and the thermal expansion coefficient of the heat sink body is matched with that of the heat source; the two sides of the heat sink body are respectively provided with a metal layer, and the metal layers comprise a titanium layer, a copper layer, a nickel layer, a platinum layer and a gold layer which are sequentially stacked towards the two sides from the thickness direction of the heat sink body. The heat source conducts heat to the internal heat pipe microstructure through the heat sink, conducts heat to the cooling liquid through the phase-change liquid, and conducts heat exchange through heat convection of the cooling liquid to finish heat dissipation of the heat source so as to control the temperature of the heat source. The thermal expansion coefficient of the heat sink body is matched with a heat source, so that the thermal stress during welding is reduced, and the reliability of the product is improved. The metal layer is arranged, so that when the heat sink is applied to a semiconductor device, the heat dissipation performance and stability are further improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a heat sink and a semiconductor device.
Background
After a semiconductor device formed by the semiconductor array chip is packaged, the output power of the semiconductor device is higher, the array chip is arranged more closely, and a heating source is concentrated, so that the heat dissipation of the array chip of the semiconductor device is one of the main problems concerned by the industry. The existing semiconductor device has low heat dissipation efficiency, so that heat generated during the operation of the array chip cannot be dissipated in time, and the working performance of the array chip is influenced.
Disclosure of Invention
An object of the embodiments of the present application is to provide a heat sink and a semiconductor device, which can improve heat dissipation efficiency and work performance of a heat source.
In one aspect of the embodiments of the present application, a heat sink is provided, including a heat sink body, a cavity is provided in the heat sink body, a heat pipe microstructure is provided in the cavity, and phase-change liquid is filled in the cavity, one end of the heat sink is used for being immersed in cooling liquid, the other end of the heat sink is used for being connected with a heat source, and a thermal expansion coefficient of the heat sink body is matched with a thermal expansion coefficient of the heat source; the heat sink comprises a heat sink body and is characterized in that metal layers are arranged on two sides of the heat sink body respectively, and each metal layer comprises a titanium layer, a copper layer, a nickel layer, a platinum layer and a gold layer which are sequentially stacked towards two sides from the thickness direction of the heat sink body.
Optionally, the heat sink body is a rectangular parallelepiped structure.
Optionally, a plurality of support columns are further disposed in the heat sink body, and the plurality of support columns are arranged at intervals along the thickness direction of the heat sink body.
Optionally, the material of the heat sink body is diamond copper.
Optionally, the surface of the end of the heat sink body immersed in the cooling liquid is a roughened surface.
Optionally, the phase-change liquid comprises any one of water, methanol and ethanol, or a combination of any two of them, or a combination of any three of them.
In another aspect of the embodiments of the present application, a semiconductor device is provided, which includes a plurality of chips arranged at intervals in sequence, the heat sinks mentioned above are respectively disposed along two sides of the output surface of the chips, and one end of the heat sink, which is far away from the chips, is immersed in the cooling liquid.
Optionally, the first faces of the chips are connected to the heat sink by a gold-tin solder layer to form a structure group, the second faces of the chips of the structure group are connected to the heat sink of another structure group by an indium solder layer, and the first faces and the second faces are two opposite faces of the chips.
Optionally, the heat sink body and the gold-tin soldering layer, and the heat sink body and the indium soldering layer are connected through the metal layer respectively.
Optionally, the material of the heat sink body is diamond copper; the solder thermal expansion coefficient of the gold-tin soldering layer is 16x10-6The coefficient of thermal expansion of the copper material of the copper layer is 16x10 DEG C-6The coefficient of thermal expansion of the diamond copper is 7.8x10 DEG C-6The chip is made of gallium arsenide (GaAs) with a thermal expansion coefficient of 6.5 x10-6/℃。
Optionally, the copper layer has a thickness between 10um and 12 um.
Optionally, the chip packaging structure further comprises a packaging shell, and a positive electrode and a negative electrode which are oppositely arranged in the packaging shell, wherein the plurality of chips are located between the positive electrode and the negative electrode, and the cooling liquid is filled in the packaging shell.
The heat sink and the semiconductor device provided by the embodiment of the application, the heat pipe microstructure and the phase-change liquid are sealed in the heat sink body, the heat pipe microstructure is provided with the capillary porous material, one end (hot end) of the heat sink is connected with the heat source, the other end (cold end) of the heat sink is immersed in the cooling liquid, the heat dissipated by the heat source is conducted to the heat pipe microstructure through the heat sink body, the phase-change liquid is gasified by the heat to flow to the cold end, the heat at the hot end is brought to the cold end, the gasified phase-change liquid is cooled by the cooling liquid at the cold end, the heat is exchanged at the cold end, the gasified phase-change liquid is condensed into the liquid state, the condensed liquid state flows to the hot end again due to the gap effect of the capillary porous material inside the liquid phase-change liquid, the hot. The heat sink that this application embodiment provided, heat source accessible heat sink with heat conduction to inside heat pipe microstructure, take away the heat of heat source through gasification, the condensation of phase-change liquid, conduct the heat of heat source to the coolant liquid again, carry out the heat transfer through the thermal convection of coolant liquid, accomplish the heat dissipation to the heat source to the temperature of control heat source. And the thermal expansion coefficient of the heat sink body is matched with the heat source, so that when the heat sink is welded with the heat source, the thermal stress during welding can be effectively reduced, and the reliability of the product is improved. The metal layer is respectively arranged on two sides of the heat sink body, the metal layer comprises a titanium layer, a copper layer, a nickel layer, a platinum layer and a gold layer which are sequentially stacked on two sides from the thickness direction of the heat sink body, the metal layer is arranged on the heat sink, when the heat sink is applied to a semiconductor device, the heat sink can conduct electricity with the chip, welding and fixing between the heat sink and the chip are convenient, the metal heat conductivity is good, and the metal layer is arranged to further improve the heat dissipation efficiency of the heat sink to the chip. The surface of the heat sink body is electroplated with a copper layer, so that the heat conductivity of copper is high, heat can be diffused transversely, and the heat dissipation efficiency is improved; the copper layer is further finely processed, the size precision of the heat sink material is ensured, the surface type precision of a welding area of the metal layer and the chip can be increased, the welding surface can be smoother after welding, in order to enhance the adhesion of the copper layer, a titanium layer is firstly sputtered on the surface of the heat sink, then the copper layer is ground, and then a nickel layer, a platinum layer and a gold layer are sequentially arranged on the copper layer, so that an integral metal layer is formed on the heat sink body. The nickel layer and the platinum layer can be used as blocking layers, can effectively prevent solder diffusion, reduce solder alloying and improve welding reliability, the blocking effect of the two blocking layers is better, the platinum layer can further improve welding strength, the gold layer is positioned on the outermost side of the surface of the heat sink body, the weldability of gold is good, and when the heat sink and the chip are welded, the chip and the heat sink can be better welded and combined through the metal layer. The different metals are mutually matched to form an integral metal layer, and after the heat sink and the metal layer are integrated, the chip and the heat sink are welded through the metal layer, so that the heat radiation performance and stability of the heat sink can be improved, and the welding strength can also be improved.
The semiconductor device comprises multiple chips and multiple heat sinks arranged at intervals, wherein the chips work and generate heat, and the heat sinks can dissipate heat from two sides of each chip. The chip during operation produces the heat, dispels the heat to the chip through heat sink, takes the heat to the coolant liquid end, is equipped with the heat pipe micro-structure in the heat sink, realizes heat transfer through capillary suction pressure of capillary porous material and the phase transition of inside phase transition liquid for heat conductivility is good, can dispel the heat to the chip fast. The heat sink and the chip are fixed by welding, the thermal expansion coefficient of the heat sink body is matched with that of the chip, and the thermal stress generated by welding the heat sink body and the chip is reduced, so that the reliability of the product is improved. The heat sink is applied to the semiconductor device, and for the overall structure of the semiconductor device, the heat dissipation performance, the stability and the strength of the heat sink are effectively improved, and the overall performance of the semiconductor device is enhanced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is one of schematic diagrams of a heat sink structure provided in the present embodiment;
fig. 2 is a second schematic view of the heat sink structure provided in the present embodiment;
fig. 3 is a third schematic diagram of the heat sink structure provided in this embodiment;
fig. 4 is one of the schematic structural diagrams of the semiconductor device provided in the present embodiment;
fig. 5 is a second schematic structural diagram of the semiconductor device provided in this embodiment;
fig. 6 is a third schematic structural diagram of the semiconductor device provided in this embodiment.
Icon: 10-heat sink; 101-a heat sink body; 1011-roughening the surface; 11-heat pipe microstructure; 12-a support column; 102-titanium layer; 103-a copper layer; 104-a nickel layer; 105-a platinum layer; 106-gold layer; 13-gold-tin solder layer; 14-indium solder layer; 20-chip; 21-an output face; 22-a first side; 23-a second face; 201-screws; 221-a coolant inlet; 222-a coolant outlet; 30-an insulating and sealing structure; 41-positive electrode; 42-negative electrode; 50-cooling liquid; 60-an insulating sealing block; 70-elastomeric sealing layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The embodiment of the application provides a heat sink 10, as shown in fig. 1, which includes a heat sink body 101, a cavity is provided in the heat sink body 101, a heat pipe microstructure 11 is provided in the cavity, and phase-change liquid is filled in the cavity, one end of the heat sink 10 is used for being immersed in cooling liquid 50, the other end of the heat sink 10 is used for being connected with a heat source, and the expansion coefficient of the heat sink body 101 is matched with the thermal expansion coefficient of the heat source.
The heat sink body 101 serves as an external support structure for the heat sink 10, having a cavity therein. The heat pipe microstructure 11 is arranged in the cavity, the heat pipe microstructure 11 comprises a pipe body, capillary porous materials are arranged in the pipe body, the capillary porous materials are filled with phase-change liquid and then sealed, the heat pipe microstructure 11 mainly transfers heat by vapor and liquid phase change of the phase-change liquid, the thermal resistance is low, the heat pipe microstructure 11 realizes heat transfer by heat conduction and the quick heat transfer characteristic of the phase-change liquid, the capillary suction pressure which is large enough by the capillary porous materials and the phase change of the phase-change liquid inside the capillary porous materials are relied on, the heat of a heat source is rapidly transferred by penetrating the heat pipe microstructure 11, and the heat.
In the heat exchange process, one end of the heat sink 10 connected with the heat source is a hot end, and one end immersed in the cooling liquid 50 is a cold end. The heat conduction of heat source is to heat pipe micro-structure 11 in heat sink 10, and the phase change liquid is gasified by the heat and flows to the cold junction, is about to bring the heat of hot junction to the cold junction, and gasified phase change liquid is cooled by coolant liquid 50 at the cold junction, condenses to liquid state, and liquid phase change liquid flows to the hot junction because of the gap effect of inside capillary porous material, cools the hot junction, and the reciprocating circulation, because the gasification of phase change liquid takes away a large amount of heats, so heat sink 10's radiating efficiency is very high. The heat pipe microstructures 11 are arranged in the heat sink body 101, so that the heat conduction performance of the heat sink 10 is improved.
Wherein, the phase-change liquid can be water, and can also be phase-change liquid with good heat transfer performance such as methanol or ethanol.
The phase-change liquid can be water, methanol or ethanol, or a combination of any two of the three, or a combination of any three of the three. The concrete setting can be carried out according to different practical requirements.
And the thermal expansion coefficient of the heat sink body 101 is matched with that of the heat source, so that when the heat sink body 101 and the heat source are welded, the thermal stress generated during welding can be reduced.
Specifically, when the heat sink 10 is applied to a semiconductor device, the heat sink body 101 may be made of a diamond copper composite material, and the thermal expansion coefficient of diamond copper is very close to that of the chip 20 (heat source), so that the chip 20 and the diamond copper-gold tin can be soldered, and the reliability of the product is improved.
In addition, in order to further improve the heat exchange efficiency of the cooling liquid 50 on the heat sink 10, the surface of the heat sink body 101 at the end immersed in the cooling liquid 50 may be roughened to be a roughened surface 1011 as shown in fig. 3. Coarsening is to treat the surface of the heat sink body 101 by a mechanical method or a chemical method, and perform mechanical abrasion or chemical corrosion, so as to obtain a micro-rough structure on the surface of the heat sink body 101, and the micro-rough structure can improve the heat exchange efficiency of the heat sink 10.
As shown in fig. 2, metal layers are respectively provided on the heat sink body 101 toward both sides in the thickness direction of the heat sink body 101, and the metal layers include a titanium layer 102, a copper layer 103, a nickel layer 104, a platinum layer 105, and a gold layer 106, which are sequentially stacked from the heat sink body 101 toward both sides in the thickness direction.
The metal layer is arranged on the heat sink body 101, so that when the heat sink 10 is applied to a semiconductor device, the heat sink 10 can conduct electricity with the chip 20 (heat source), and the heat sink 10 and the chip 20 are convenient to weld and fix.
The heat sink body is made of diamond copper with a thermal expansion coefficient of 7.8x10-6/° c; the solder thermal expansion coefficient of the gold-tin soldering layer is 16x10-6/° c, the coefficient of thermal expansion of the copper material of the copper layer is 16x10-6The material of the chip is gallium arsenide, and the thermal expansion coefficient of the gallium arsenide is 6.5 x10-6the/DEG C, according to the basic principle of thermal expansion coefficient adjustment, the thickness of the copper layer is reduced as much as possible, and the thickness of the heat sink body 101 is enlarged, so that the thermal expansion coefficients of all the metal layers can be adjusted to be close to the thermal expansion coefficient of diamond copper of the heat sink body 101, the heat sink body 101 is a thin-wall structure with a cavity, so that although the welding surface of the heat sink body 101 and the chip 20, namely the thin wall in the thickness direction of the heat sink body 101, is smaller in thickness, the heat sink body 101 and the metal layers are welded into a whole, and the stability of the whole material of the heat sink 10 can be enhanced.
The diamond copper material does not easily have a flat surface, and therefore the copper layer 103 is provided on the heat sink body 101. In order to obtain a flat welding surface, after the heat sink 10 of diamond copper is formed, a copper layer 103 is electroplated on the upper surface of the heat sink 10, the electroplating thickness is about 40um, in order to enhance the adhesion of the copper layer 103, a titanium layer 102 is firstly sputtered on the surface of the diamond copper, then the copper layer 103 is ground or turned by a mirror lathe, and finally the thickness of the copper layer 103 is controlled between 10um and 12 um. A nickel layer 104, a platinum layer 105 and a gold layer 106 are further sequentially disposed on the copper layer 103 to form a metal layer on the heat sink 10.
The heat sink 10 provided by the embodiment of the application, the heat pipe microstructure 11 and the phase-change liquid are sealed in the heat sink body 101, the heat pipe microstructure 11 is provided with the capillary porous material, one end (hot end) of the heat sink 10 is connected with the heat source, the other end (cold end) of the heat sink 10 is immersed in the cooling liquid 50, the heat dissipated by the heat source is conducted to the heat pipe microstructure 11 through the heat sink body 101, the heat vaporizes the phase-change liquid to enable the phase-change liquid to flow to the cold end, the heat of the hot end is brought to the cold end, the cooling liquid 50 at the cold end cools the vaporized phase-change liquid, the phase-change liquid is condensed into the liquid from the vaporized state, the condensed liquid phase-change liquid flows to the hot end again due to the gap effect of the microstructure of the capillary porous material inside the liquid phase-change liquid, the heat is. According to the heat sink 10 provided by the embodiment of the application, the heat source can conduct heat to the internal heat pipe microstructure 11 through the heat sink 10, the heat of the heat source is taken away through the gasification and condensation of the phase-change liquid, then the heat of the heat source is conducted to the cooling liquid 50, heat exchange is carried out through the heat convection of the cooling liquid 50, and the heat dissipation of the heat source is completed to control the temperature of the heat source. Moreover, the thermal expansion coefficient of the heat sink body 101 is matched with the heat source, so that when the heat sink 10 is welded with the heat source, the thermal stress during welding can be effectively reduced, and the reliability of the product is improved. In addition, metal layers are respectively arranged on two sides of the heat sink body 101, and each metal layer comprises a titanium layer 102, a copper layer 103, a nickel layer 104, a platinum layer 105 and a gold layer 106 which are sequentially stacked from two sides in the thickness direction of the heat sink body 101. The metal layer is arranged on the heat sink body 101, so that when the heat sink 10 is applied to a semiconductor device, the heat sink 10 can conduct electricity with the chip 20 (heat source), and the heat sink 10 and the chip 20 are convenient to weld and fix. The metal has good thermal conductivity, and the arrangement of the metal layer can further improve the heat dissipation efficiency of the heat sink 10 to the chip. The copper layer 103 is arranged on the heat sink body 101, and the copper has high thermal conductivity, so that heat can be diffused transversely, and the heat dissipation efficiency is improved; the copper layer 103 is further finely processed to ensure the dimensional accuracy of the heat sink 10 material, the surface type accuracy of the welding area of the metal layer and the chip 20 can be increased, and a smooth welding surface can be obtained when the heat sink 10 is welded with the chip 20 through the metal layer. The nickel layer 104 and the platinum layer 105 can be used as blocking layers, can effectively prevent solder diffusion, reduce solder alloying and improve welding reliability, the blocking effect of the two blocking layers is better, the platinum layer 105 can further improve welding strength, the gold layer 106 is positioned on the outermost side of the surface of the heat sink body 101, the gold weldability is good, and when the heat sink 10 and the chip 20 are welded, the chip 20 and the heat sink 10 can be better welded and combined through a metal layer. The metal layers with the laminated structures are formed by adopting different metals, and the different metals are matched with each other, so that the heat dissipation performance of the heat sink can be effectively enhanced, the welding strength is improved, and the stability of the heat sink is ensured. The heat sink 10 is applied to a semiconductor device, so that the heat dissipation performance, the stability and the strength of the overall structure of the semiconductor device are effectively improved, and the overall performance of the semiconductor device is enhanced.
The heat sink body 101 is a cuboid structure, the heat sink body 101 of the cuboid structure can form a similar flat heat sink, the heat pipe microstructure 11 is arranged inside the heat sink body 101, the heat pipe microstructure 11 is arranged along the length direction of the heat sink body 101, namely, the heat pipe microstructure 11 is arranged along the axial direction, the axial heat conductivity of the heat pipe microstructure 11 is very strong, and when the heat sink body 101 is arranged according to the mode, the heat conductivity in the length direction is further improved. Thus, when the heat sink body 101 is lengthened and the heat pipe microstructures 11 are disposed therein along the longitudinal direction, the heat conduction path is lengthened, sufficient heat exchange can be performed, and the heat sink is suitable for being disposed in a heat dissipation structure with low heat dissipation efficiency due to a short heat dissipation path.
In order to enhance the structural strength of the heat sink 10, a plurality of supporting columns 12 are further arranged in the heat sink body 101, the plurality of supporting columns 12 are arranged at intervals along the thickness direction of the heat sink body 101, and two ends of each supporting column 12 respectively abut against the inner wall of the heat sink body 101 in the thickness direction so as to support the strength and rigidity of the heat sink body 101 in the thickness direction; the supporting columns 12 have a gap between the width direction of the heat sink body 101 and the inner wall of the heat sink body 101 so that the heat pipe microstructures 11 can be arranged in the heat sink body 101 and the phase-change liquid can flow in the heat sink body 101.
To sum up, in the heat sink 10 provided in the embodiment of the present application, the heat pipe microstructure 11 is disposed in the heat sink 10, the heat pipe microstructure 11 has a capillary porous material, the capillary porous material is filled with the phase-change liquid, one end of the heat sink 10 is connected to the heat source, and the other end is immersed in the cooling liquid 50, the heat of the heat source is conducted to the heat pipe microstructure 11 in the heat sink 10, the heat vaporizes the phase-change liquid to make the phase-change liquid flow toward one end of the cooling liquid 50, and exchanges heat with the cooling liquid 50, the cooling liquid 50 cools the vaporized phase-change liquid to make the phase-change liquid condense into a liquid state, the liquid phase-change liquid flows back to a heat source end in a gap of. The surface roughening treatment is performed on one end of the heat sink body 101 immersed in the cooling liquid 50, so that the heat dissipation effect is further improved, and the heat sink 10 has a good heat dissipation effect and high heat dissipation efficiency. In addition, the thermal expansion coefficient of the heat sink body 101 is matched with that of the heat source, so that the thermal stress generated when the heat sink 10 and the heat source are welded is reduced, and the product reliability is improved. The supporting columns 12 are further arranged in the heat sink 10, so that the strength and rigidity of the heat sink 10 in the thickness direction are enhanced, and the service life and the performance are improved. The metal layer on the heat sink body 101 facilitates the conduction and welding between the heat sink 10 and the chip 20.
The embodiment of the application also discloses a semiconductor device, which comprises a plurality of chips 20 arranged at intervals in sequence, heat sinks 10 according to the embodiment are respectively arranged along two sides of the output surface of the chips 20, and one end of each heat sink 10, which is far away from the chip 20, is immersed in the cooling liquid 50.
The semiconductor device further comprises a packaging shell, and a positive electrode 41 and a negative electrode 42 which are oppositely arranged in the packaging shell, wherein the plurality of chips 20 which are sequentially arranged at intervals are positioned between the positive electrode 41 and the negative electrode 42, a filling cavity is arranged in the packaging shell, and cooling liquid 50 is filled in the filling cavity.
Illustratively, as shown in fig. 4, a plurality of heat sinks 10 and a plurality of chips 20 are arranged between the positive electrode 41 and the negative electrode 42, the positive electrode 41 and the negative electrode 42 are respectively connected with one heat sink 10 through screws 201, the plurality of heat sinks 10 are arranged at intervals, and one chip 20 is arranged in a gap between two heat sinks 10; the chips 20 are arranged at intervals, and a heat sink 10 is arranged in the gap between the two chips 20 to form a structure in which the chips 20 and the heat sink 10 are arranged at intervals in sequence.
Moreover, the heat sink 10 is disposed along two sides of the output surface 21 of the chip 20, so as to avoid covering the output surface 21 of the chip 20 and affecting the operation of the semiconductor device. Meanwhile, the side of the package housing facing the output surface 21 can be a transparent side, and is made of a transparent material, so that the output surface 21 of the chip 20 can be seen through the transparent side of the package housing.
The first side 22 (P-side) of the chip 20 is connected to the heat sink 10 by the gold-tin solder layer 13 (hard solder) to form a structural group, and a plurality of such structural groups are stacked to form a structure in which the chip 20 and the heat sink 10 are sequentially spaced apart.
The second side 23 (N-side) of the chip 20 of a structural group is connected to the heat sink 10 of another structural group by means of an indium solder layer 14 (soft solder), the first side 22 and the second side 23 being two opposite sides of the chip 20.
In order to improve the welding reliability of the chip 20, the P surface of the chip 20 and the heat sink 10 are welded by adopting gold-tin hard solder, the thermal expansion coefficients of the heat sink 10 and the chip 20 are designed to be very close, the failure of the chip due to the fracture caused by the thermal stress problem is avoided, meanwhile, the heat sink 10 is integrally made of diamond copper, the whole structure is stable, meanwhile, the welding surface of the heat sink 10 and the chip 20 can be arranged to be very thin, namely, the wall thickness of the heat sink body 101 in the thickness direction is small, and the heat dissipation efficiency can be improved.
Metal layers are respectively arranged between the heat sink body 101 and the gold-tin welding layer 13, and between the heat sink body 101 and the indium welding layer 14, so that the chip 20 and the heat sink 10 are conductive, and the anode 41 and the cathode 42 are conducted. Moreover, the thermal expansion coefficient of the heat sink body 101 is matched with that of the chip 20, so that welding thermal stress is avoided, and the working reliability of the semiconductor device is improved.
As shown in fig. 4, when the heat sinks 10 and the chips 20 are stacked, the first surface 22 of one chip 20 and one heat sink 10 are soldered by hard solder to form one structural group, and then when a plurality of such structural groups are soldered, the second surface 23 of the chip 20 and the heat sink 10 of another structural group are soldered by soft solder to form a stacked structure.
Illustratively, the first side 22 and the second side 23 of the chip 20 in fig. 4 are arranged in different positions, forming a structural group with the heat sinks 10 on different sides.
The heat sink 10 is connected to the chip 20 along the upper end of the heat sink 10 in the length direction, and the heat sink 10 is immersed in the cooling liquid 50 along the lower end of the heat sink 10 in the length direction, so that heat generated by the operation of the chip 20 is conducted to the cooling liquid 50 through the heat sink 10, and heat exchange is performed in the cooling liquid 50, thereby completing heat dissipation of the chip 20.
Moreover, the cooling liquid 50 is an insulating cooling liquid such as deionized water, so as to prevent the heat sink 10 from conducting electricity in the cooling liquid 50.
As shown in fig. 5, the package housing is further provided with a cooling liquid inlet 221 and a cooling liquid outlet 222, and the cooling liquid inlet 221 and the cooling liquid outlet 222 are communicated with the filling cavity, so that the cooling liquid 50 can conveniently enter and exit to circulate, and the heat exchange efficiency is improved.
As shown in fig. 6, the cooling liquid 50 flows into the filling cavity through the cooling liquid inlet 221 and flows out of the filling cavity through the cooling liquid outlet 222 to form a circulating cooling liquid 50 in the filling cavity. When the cooling liquid 50 exchanges heat with the heat sink 10, the circulating cooling liquid 50 can improve the heat exchange efficiency, the heat exchanged by the heat sink 10 to the cooling liquid 50 is taken away by the flowing cooling liquid 50, the cooling capacity of the flowing cooling liquid 50 is high, and the heat exchange capacity is improved by the circulating cooling liquid 50.
And an insulating sealing structure 30 is arranged between adjacent heat sinks 10 outside the filling cavity at the lower end of the heat sink 10, the insulating sealing structure 30 and the heat sink 10 are sealed by soft solder, and the soft solder can be indium solder, so that the stress generated by the stacking welding of a plurality of heat sinks 10 is eliminated or reduced. There is a gap between the insulating and sealing structure 30 and the chip 20, and the insulating and sealing structure 30 seals the cooling liquid 50 and makes the lower end of the heat sink 10 insulating and non-conducting, so as to avoid short circuit between the anode 41 and the cathode 42. Meanwhile, the insulating and sealing structure 30 also functions to fix the heat sink 10.
The heat sink 10, the chip 20, and the insulating seal structure 30 form an integrated structure, the positive electrode 41 and the negative electrode 42 sandwich the integrated structure, that is, the integrated structure is located between the positive electrode 41 and the negative electrode 42, and the insulating seal structure 30 serves to stabilize the entire integrated structure, so that the plurality of heat sinks 10 and the chips 20 are firmly connected. Meanwhile, the insulating and sealing structure 30 also plays a role in insulation and sealing.
In the package housing, insulation sealing blocks 60 are further respectively disposed on the other two sides of the output surface 21 of the chip 20, and the insulation sealing blocks 60 can seal the two ends of the heat sink 10 through waterproof sealing glue. The length of the two insulating seal blocks 60 can extend to the extent of covering the positive electrode 41 and the negative electrode 42, that is, the two insulating seal blocks 60 can sandwich the positive electrode 41 and the negative electrode 42.
Elastic sealing layers 70 are respectively arranged between the positive electrode 41 and the insulating sealing block 60 and between the negative electrode 42 and the insulating sealing block 60, so that the sealing effect is achieved, and meanwhile, the installation stress of the insulating sealing block 60 is buffered.
In summary, the semiconductor device provided in the embodiment of the present application is packaged by the package housing, the plurality of chips 20 and the plurality of heat sinks 10 are disposed at intervals between the positive electrode 41 and the negative electrode 42, the positive electrode 41 and the negative electrode 42 are conducted through the chips 20 and the heat sinks 10, and the heat sinks 10 can dissipate heat from both sides of each chip 20. The chip 20 generates heat during working, the chip 20 is cooled through the heat sink 10, the heat is brought to the end of the cooling liquid 50, the heat pipe microstructure 11 is arranged in the heat sink 10, and heat transfer is realized through capillary suction pressure of the capillary porous material of the heat pipe microstructure 11 and phase change of the internal phase change liquid, so that the heat conduction performance is good, and the chip 20 can be rapidly cooled. The heat sink 10 and the chip 20 are fixed by welding, and the thermal expansion coefficient of the heat sink body 101 is matched with that of the chip 20, so that the thermal stress generated by welding the heat sink body and the chip is reduced, and the reliability of the product is improved. In addition, in order to support the welding structure of the heat sink 10 and the chip 20, the heat sink 10 is fixed by adopting the insulating sealing structure 30, and the lower end of the heat sink 10 is not conducted by the insulating sealing structure 30 and the insulating cooling liquid, so that the influence on normal operation caused by short circuit between the anode 41 and the cathode 42 is avoided.
The semiconductor device includes the same structure and advantageous effects as those of the heat sink 10 in the foregoing embodiment. The structure and advantageous effects of the heat sink 10 have been described in detail in the foregoing embodiments, and are not described in detail herein.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (12)
1. A heat sink is characterized by comprising a heat sink body, wherein a cavity is arranged in the heat sink body, heat pipe microstructures are arranged in the cavity and filled with phase-change liquid, one end of the heat sink is used for being immersed in cooling liquid, the other end of the heat sink is used for being connected with a heat source, and the thermal expansion coefficient of the heat sink body is matched with that of the heat source; the heat sink comprises a heat sink body and is characterized in that metal layers are arranged on two sides of the heat sink body respectively, and each metal layer comprises a titanium layer, a copper layer, a nickel layer, a platinum layer and a gold layer which are sequentially stacked towards two sides from the thickness direction of the heat sink body.
2. A heat sink as claimed in claim 1, wherein the heat sink body is of rectangular parallelepiped configuration.
3. A heat sink as claimed in claim 2, wherein a plurality of support posts are provided within the heat sink body, the plurality of support posts being spaced apart along the thickness of the heat sink body.
4. The heat sink of claim 2, wherein the material of the heat sink body is diamond copper.
5. The heat sink of claim 1, wherein a surface of the heat sink body at an end immersed in the cooling fluid is roughened.
6. The heat sink of claim 1, wherein the phase change liquid comprises any one of water, methanol, and ethanol, or a combination of any two or a combination of any three.
7. A semiconductor device, comprising a plurality of chips arranged at intervals in sequence, wherein heat sinks according to any one of claims 1 to 6 are respectively arranged along two sides of an output surface of each chip, and one end of each heat sink, which is far away from each chip, is immersed in the cooling liquid.
8. The semiconductor device of claim 7, wherein a first side of the chip is connected to the heat sink by a gold-tin solder layer to form a group of structures, a second side of the chip of the group of structures is connected to the heat sink of another group of structures by an indium solder layer, and the first side and the second side are two opposing sides of the chip.
9. The semiconductor device of claim 8, wherein the heat sink body and the gold-tin solder layer, and the heat sink body and the indium solder layer are connected by the metal layer, respectively.
10. The semiconductor device of claim 9, wherein the material of the heat sink body is diamond copper;
the solder thermal expansion coefficient of the gold-tin soldering layer is 16x10-6The coefficient of thermal expansion of the copper material of the copper layer is 16x10 DEG C-6The coefficient of thermal expansion of the diamond copper is 7.8x10 DEG C-6The chip is made of gallium arsenide (GaAs) with a thermal expansion coefficient of 6.5 x10-6/℃。
11. The semiconductor device according to claim 9 or 10, wherein the copper layer has a thickness of between 10um and 12 um.
12. The semiconductor device according to claim 7, further comprising a package housing, and a positive electrode and a negative electrode which are arranged oppositely in the package housing, wherein the plurality of chips are located between the positive electrode and the negative electrode, and the package housing is filled with the cooling liquid.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113937614A (en) * | 2021-09-30 | 2022-01-14 | 温州泛波激光有限公司 | Low-thermal-resistance BAR packaging process |
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| CN202127010U (en) * | 2011-01-26 | 2012-01-25 | 燿佳科技股份有限公司 | Heat pipe |
| CN105283954A (en) * | 2013-05-03 | 2016-01-27 | 霍尼韦尔国际公司 | Lead frame construct for lead-free solder connections |
| CN106558563A (en) * | 2015-09-29 | 2017-04-05 | 比亚迪股份有限公司 | Power model and the vehicle with which |
| CN109427708A (en) * | 2017-08-31 | 2019-03-05 | 比亚迪股份有限公司 | Multi-channel cooling device and power module with it |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202127010U (en) * | 2011-01-26 | 2012-01-25 | 燿佳科技股份有限公司 | Heat pipe |
| CN105283954A (en) * | 2013-05-03 | 2016-01-27 | 霍尼韦尔国际公司 | Lead frame construct for lead-free solder connections |
| CN106558563A (en) * | 2015-09-29 | 2017-04-05 | 比亚迪股份有限公司 | Power model and the vehicle with which |
| CN109427708A (en) * | 2017-08-31 | 2019-03-05 | 比亚迪股份有限公司 | Multi-channel cooling device and power module with it |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113937614A (en) * | 2021-09-30 | 2022-01-14 | 温州泛波激光有限公司 | Low-thermal-resistance BAR packaging process |
| CN113937614B (en) * | 2021-09-30 | 2023-08-18 | 温州泛波激光有限公司 | Low thermal resistance BAR strip packaging technology |
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| CN112802812B (en) | 2021-06-18 |
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