CN112802794B - Electrostatic chuck device and degumming machine - Google Patents
Electrostatic chuck device and degumming machine Download PDFInfo
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- CN112802794B CN112802794B CN202110370121.5A CN202110370121A CN112802794B CN 112802794 B CN112802794 B CN 112802794B CN 202110370121 A CN202110370121 A CN 202110370121A CN 112802794 B CN112802794 B CN 112802794B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
The invention discloses an electrostatic chuck device and a degumming machine, and the electrostatic chuck device is characterized by comprising the following components: an electrostatic chuck provided with a placement surface, the placement surface comprising: a plurality of circumferential gas paths forming a concentric multilayer structure in the radial direction; the radial air passages are communicated with the air holes in the center of the placing surface and the circumferential air passages on the outermost layer and are blocked from the rest circumferential air passages; each backflow gas path is communicated with all the circumferential gas paths between any two adjacent radial gas paths, and one end, facing the air holes, of each backflow gas path is communicated with the circumferential gas path at the innermost side and is blocked by the air holes; and the air flow is blown out from the air holes and flows to the circumferential air path on the outermost side along the plurality of radial air paths, then flows to the backflow air path and then flows to the circumferential air paths on two sides of the backflow air path. The invention solves the problems of large middle adsorption force and small edge adsorption force of the electrostatic chuck.
Description
Technical Field
The invention relates to the field of wafers in the semiconductor industry, in particular to an electrostatic chuck device and a photoresist remover.
Background
Currently, in a wafer manufacturing process, a wafer needs to be accurately and stably positioned. The existing wafer fixing device often adopts an electrostatic chuck to adsorb wafers, the electrostatic chuck adopts a plurality of concentric circular gas paths and a plurality of radial gas paths communicated with each circular gas path, after the electrostatic chuck lets in gas, the center is that the circular gas path is filled with gas first, and the outer side is that the circular gas path has gas circulation after the circular gas path, so that the outer side is caused, the gas flow in the circular gas path is less than the inner side the circular gas path, and the adsorption force outside the electrostatic chuck is also less than the center.
Disclosure of Invention
Therefore, the embodiment of the invention provides an electrostatic chuck device, which solves the problems of large middle adsorption force and small edge adsorption force of an electrostatic chuck.
In one aspect, an embodiment of the present invention provides an electrostatic chuck apparatus, including: an electrostatic chuck provided with a placement surface, the placement surface comprising: a plurality of circumferential gas paths forming a concentric multilayer structure in the radial direction; the radial air passages are communicated with the air holes in the center of the placing surface and the circumferential air passages on the outermost layer and are blocked from the rest circumferential air passages; and each backflow air path is communicated with all the circumferential air paths between any two adjacent radial air paths.
The technical effect achieved after the technical scheme is adopted is as follows: the air flow flows to the radial air path from the air hole, flows to the circumferential air path on the outermost side through the radial air path, then flows to the backflow air path, and flows back to the circumferential air path on the innermost side through the backflow air path, so that the middle and the edge of the electrostatic chuck have larger adsorption force, the adsorption force is more uniform, and the wafer is not easy to slide or separate.
In the first embodiment of the present invention, there are four radial gas paths, and the placement surface is equally divided into four same gas path regions, each gas path region is provided with one backflow gas path, each backflow gas path equally divides the corresponding gas path region into two sides, and each side is provided with a plurality of circumferential gas paths connected to the backflow gas path.
The technical effect achieved after the technical scheme is adopted is as follows: compared with the radial air passages below four air passages, the electrostatic chuck has higher efficiency of guiding the air flow to the edge of the electrostatic chuck, and the air flow of each radial air passage has smaller flowing distance on the circumferential air passage at the outermost side, so that the air flow can flow back to the backflow air passage more quickly.
In the first embodiment of the present invention, one end of each of the return air paths facing the air hole communicates with the innermost circumferential air path.
The technical effect achieved after the technical scheme is adopted is as follows: the air flow can only flow to the innermost circumferential air path in a backflow mode, and the problem that the central air pressure of the electrostatic chuck is too large and the edge air pressure is too small cannot be caused, so that the problems that the middle adsorption force is large and the edge adsorption force is small cannot occur.
In the first embodiment of the present invention, the air flow is blown out from the air holes, flows along the plurality of radial air paths to the outermost circumferential air path, then flows to the return air path, and then flows to the circumferential air paths on both sides of the return air path.
The technical effect achieved after the technical scheme is adopted is as follows: the backflow mode of the airflow can enable the circumferential air channels on the outermost side to preferentially circulate, and the edge of the electrostatic chuck is guaranteed to have large adsorption force.
In a first embodiment of the present invention, the distance between the outer circumferential air passages is smaller than the distance between the remaining inner circumferential air passages.
The technical effect achieved after the technical scheme is adopted is as follows: the air pressure of the circumferential air path on the outermost side is smaller than the air pressure near the air hole, so that the circumferential air path on the outer side is denser to have the same air pressure as the center of the electrostatic chuck.
In the first embodiment of the present invention, the width of the outermost circumferential air passage is greater than the width of the remaining inner circumferential air passages.
The technical effect achieved after the technical scheme is adopted is as follows: the circumferential air path on the outermost side has a larger flow rate than the circumferential air path on the inner side, and therefore has a better adsorption force.
In the first embodiment of the present invention, the radial air passages, the return air passages, and the outermost circumferential air passages have the same width.
The technical effect achieved after the technical scheme is adopted is as follows: the radial gas path, the backflow gas path and the circumferential gas path on the outermost side all have larger flow, so that the backflow efficiency of the gas flow is improved.
In a first embodiment of the present invention, the electrostatic chucking device further comprises: a base located below the electrostatic chuck, comprising: a plurality of circular gas circuits; the plurality of second radial gas passages are communicated with the plurality of circular gas passages; and the bottom of the electrostatic chuck is provided with a mounting groove sleeved on the top of the base.
The technical effect achieved after the technical scheme is adopted is as follows: after gas is introduced into the annular gas path and the second radial gas path on the base, the base and the wafer chuck can be adsorbed; the mounting groove is used for mounting the base and can reduce gas loss of the circular ring gas path and the second radial gas path.
In a first embodiment of the present invention, the electrostatic chucking device further comprises: a placing table which is covered on the placing surface; wherein, the static chuck is provided with a limit step matched with the loading table.
The technical effect achieved after the technical scheme is adopted is as follows: the carrying platform is used for placing a wafer, and the limiting step is used for installing the carrying platform and preventing air flow on the placing surface from losing.
In another aspect, an embodiment of the present invention provides a photoresist stripper, including the electrostatic chuck apparatus according to any of the above embodiments.
The technical effect achieved after the technical scheme is adopted is as follows: the degumming machine has the advantage of uniform adsorption force of the electrostatic chuck device.
In summary, the above embodiments of the present application may have one or more of the following advantages or benefits: (1) the electrostatic chuck device conducts the airflow to the circumferential air path on the outermost side preferentially through the radial air path, so that the edge of the electrostatic chuck can have sufficient electrostatic adsorption force; (2) the circumferential air path at the outermost side of the electrostatic chuck device has a larger width than the circumferential air path at the inner side, so that the electrostatic chuck device has larger airflow flow and larger electrostatic adsorption force; (3) the interval of circumference gas circuit in the static chuck device outside is greater than inboard the circumference gas circuit, consequently the outside the circumference gas circuit is denser, has bigger electrostatic absorption power.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an electrostatic chucking apparatus 100 according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of the electrostatic chuck 110 in fig. 1.
Fig. 3 is a front view of the electrostatic chucking device 100 of fig. 1.
Fig. 4 is a sectional view taken along a-a in fig. 3.
Fig. 5 is an enlarged view of region II in fig. 4.
Fig. 6 is an enlarged view of the region I in fig. 4.
Fig. 7 is a schematic structural diagram of the base 150 in fig. 1.
Description of the main element symbols:
100 is an electrostatic chuck assembly; 110 is an electrostatic chuck; 111 is an air hole; 112 is a mounting groove; 113 is a limit step; 120 is a circumferential gas path; 121 is a first circumferential gas path; 122 is a second circumferential gas path; 130 is a radial gas path; 140 is a reflux gas circuit; 150 is a base; 151 is a circular gas circuit; 152 is a second radial gas path; 153 is a columnar cavity; reference numeral 160 denotes a mounting table.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
[ first embodiment ] A method for manufacturing a semiconductor device
Referring to fig. 1, a schematic structural diagram of an electrostatic chucking apparatus 100 according to a first embodiment of the present invention is shown, including: an electrostatic chuck 110. Referring to fig. 2, the electrostatic chuck 110 is provided with a mounting surface on which a plurality of circumferential air paths 120, a plurality of radial air paths 130, and a plurality of return air paths 140 are provided. Wherein, the plurality of circumferential air passages 120 form a concentric multi-layer structure along the radial direction; the plurality of radial air passages 130 are communicated with the air holes 111 in the center of the placing surface and the circumferential air passages 120 on the outermost layer and are blocked from the rest circumferential air passages 120; and each backflow air passage 140 is communicated with all the circumferential air passages 120 between any two adjacent radial air passages 130.
In the present embodiment, the gas flow is blown out from the gas holes 111, flows along the plurality of radial gas paths 130 toward the edge of the electrostatic chuck 110, flows to the outermost circumferential gas path 120, flows to the reflow gas path 140, and finally diffuses from the reflow gas path 140 to the circumferential gas paths 120 on both sides thereof. Compared with the manner in which the radial air passages 130 are directly communicated with all the circumferential air passages 120, the flow manner enables the outermost circumferential air passages 120 to preferentially flow and have sufficient flow, so that the edge and the center of the electrostatic chuck 110 have stronger adsorption force.
Preferably, there are four radial air passages 130, and adjacent radial air passages 130 are perpendicular to each other, and the placement surface is equally divided into four same air passage areas, wherein each air passage area has the same number of circumferential air passages 120 and backflow air passages 140, so that the air flow can be uniformly diffused to the circumferential air passages 120 when flowing back to the backflow air passages 140. Of course, the radial air passages 130 may also be provided with 3, 5, 6, etc., and are not limited herein. Further, each gas path region is provided with one backflow gas path 140, each backflow gas path 140 equally divides the corresponding gas path region into two sides, and each side is provided with a plurality of circumferential gas paths 120 connected with the backflow gas path 140. The corresponding central angles of the circumferential air channels 120 on each side of the backflow air channel 140 are the same, so that after the circumferential air channels 120 are filled with air, the adsorption forces on the two sides of the backflow air channel 140 are basically the same, and the situation of uneven adsorption force cannot be caused.
Specifically, the outermost circumferential gas passage 120 is a first circumferential gas passage 121, and the remaining inner circumferential gas passages 120 are second circumferential gas passages 122. Wherein, enough clearance is left between each radial air passage 130 and the second circumferential air passages 122 on both sides of the radial air passage 130, so that the air flow in the radial air passage 130 cannot escape from the placement surface to the second circumferential air passages 122.
Further, one end of each radial air path 130, which is far away from the air hole 111, may be connected to the first circumferential air path 121 of two adjacent air path regions, so that the air flow in the radial air path 130 can pass through the two adjacent air path regions. Of course, one end of each radial air path 130 away from the air hole 111 may also be connected to any adjacent first circumferential air path 121, for example, each radial air path 130 is connected to the first circumferential air path 121 on the same side, so that the air flow of each air path region flows clockwise or counterclockwise.
Preferably, one end of each of the backflow air paths 140 facing the air holes 111 is communicated with the innermost circumferential air path 120 and is blocked from the air holes 111, so that the air holes 111 do not directly guide the air flow into the innermost second circumferential air path 122, and it is ensured that the air pressure in the center of the electrostatic chuck 110 is not much greater than that at the edge.
Both ends of each circumferential gas path 120 are not communicated with the radial gas path 130, and each circumferential gas path 120 is divided into two symmetrical segments by the backflow gas path 140, as shown in fig. 2, the radial gas path 130, the circumferential gas path 120, and the backflow gas path 140 are all groove flow paths formed by punching on the placing surface of the electrostatic chuck 110.
Preferably, the plurality of circumferential air channels 120 in each air channel region are concentrically arranged, and the radial shape is sequentially increased from inside to outside along the diameter direction of the electrostatic chuck 110, that is, the length of the first circumferential air channel 121 is longer than the length of the adjacent first circumferential air channel 121 close to the inner side, so that when the air flow flows back along the backflow air channel 140, the air flow can flow outside the electrostatic chuck 110 (i.e., the circumferential air channel 120 close to the outer edge along the radial direction) for a longer time, thereby further improving the uniformity of the air flow and avoiding the decrease of the suction force on the outer edge of the electrostatic chuck 110.
Preferably, each of the gas return paths 140 may also be disposed at a position right in the middle of the circumferential gas path 120, so as to divide the circumferential gas path 120 into two symmetrical segments, or each of the gas return paths 140 is not disposed in the middle of the circumferential gas path 120, but is disposed at an end of the same side of the plurality of circumferential gas paths 120, or a position close to the end.
Preferably, a plurality of return air paths 140 may be further disposed in each air path region. For example, there are 2, 3, and 4 backflow gas paths 140 in each gas path region, and the circumferential gas path 120 is divided into 3, 4, and 5 segments. The backflow gas paths 140 may or may not be equally divided with respect to the circumferential gas paths 120 in the gas path region.
Further, in each of the air path regions, a return air path 140 may be connected to each of two ends of each of the circumferential air paths 120. On the basis, 1 to 5 backflow gas paths 140 can be added to divide all the circumferential gas paths 120 in the gas path region, and all the circumferential gas paths 120 can be equally divided or not.
Preferably, the return air path 140 may be a straight path, an arc path, a bent path, or the like. For example, when the backflow gas path 140 is a linear flow path, the backflow gas path 140 may be radially disposed to divide all the circumferential gas paths 120 in any one of the gas path regions in an equal proportion, and the backflow gas path 140 may be disposed to be inclined with respect to a diameter, for example, to connect one end of the first circumferential gas path 121 and to connect the other end of the innermost second circumferential gas path 122; when the backflow air path 140 is an arc-shaped flow path or a bent flow path, for example, two ends of the backflow air path 140 are located at the same side of the air path region, and the middle of the backflow air path 140 protrudes to the other side.
Further, the return air path 140 may be a multi-stage flow path. For example, at least one backflow air path 140 is disposed between every two adjacent circumferential air paths 120, and the position of the backflow air path 140 is different between two different adjacent circumferential air paths 120. Specifically, the return gas path 140 connects the same side end portions of the first circumferential gas path 121 and the second circumferential gas path 122 adjacent to the inner side thereof, and the return gas path 140 connects the other side end portion between the two second circumferential gas paths 122 inside the first circumferential gas path 121. Accordingly, the reflow air path 140 and the plurality of circumferential air paths 120 form a continuously-surrounded S-shaped flow path, thereby allowing the air flow to flow outside the electrostatic chuck 110 for a longer time and increasing the adsorption force of the edge of the electrostatic chuck 110.
Preferably, one backflow air path 140 is disposed in at least one air path region, and a plurality of backflow air paths 140 are disposed in the remaining air path regions. For example, on the basis that the electrostatic chuck 110 has four gas path regions, two of the gas path regions opposite to each other are provided with a plurality of backflow gas paths 140, and the plurality of backflow gas paths 140 may be equally divided from all circumferential gas paths 120 in the corresponding gas path regions, or may be unevenly divided; in addition, two opposite air path regions are respectively provided with a backflow air path 140, which can be located in the middle or at any side of the circumferential air path 120.
Further, the gas path area provided with the plurality of backflow gas paths 140 has a larger corresponding central angle than the gas path area provided with one backflow gas path 140. In addition, in the gas path region, the width of the radial gas path 130 communicating with the backflow gas path 140 may also increase with the increase of the gas path region, so that the pressure of the gas flow is not obviously different under the condition that the plurality of gas path regions are different in size, thereby ensuring that the adsorption force of the electrostatic chuck 110 is more uniform.
Preferably, the backflow gas channels 140 in at least one of the gas channel regions are located in the middle of the corresponding circumferential gas channel 120, and the backflow gas channels 140 in the remaining gas channel regions are not located in the middle of the corresponding circumferential gas channel 120. For example, on the basis that the electrostatic chuck 110 has four air path regions, the backflow air paths 140 in two opposite air path regions are located in the middle of the corresponding circumferential air path 120, and the backflow air paths 140 in the other two opposite air path regions are not located on any side of the corresponding circumferential air path 120.
Preferably, the plurality of return air paths 140 in the air path region may respectively adopt the linear flow path, the arc flow path, the bent flow path, or the multi-section flow path. For example, on the basis that the electrostatic chuck 110 has four air path regions, the return air path 140 in two opposite air path regions adopts the linear flow path, and the return air path 140 in the other two opposite air path regions adopts the multi-segment flow path.
In addition to the above embodiments, the circumferential air path 120 may also preferably be a linear flow path. For example, the backflow air paths 140 are distributed along a radial direction, the plurality of circumferential air paths 120 are perpendicular to the backflow air paths 140 in the corresponding air path region, and the plurality of circumferential air paths 120 are parallel to each other, and the circumferential air paths 120 close to the air holes 111 are shorter than the circumferential air paths 120 far from the air holes 111. Of course, the circumferential air path 120 may be inclined with respect to the return air path 140.
Preferably, the radial air passages 130 may also be arc-shaped flow passages or broken line flow passages, and a plurality of radial air passages 130 are protruded in the same direction, for example, clockwise or counterclockwise, at this time, the placement surface is divided into a plurality of windmill-shaped air passage areas. Among them, the backflow air path 140 may be parallel to the radial air path 130, i.e., convex in a clockwise or counterclockwise direction.
Preferably, a plurality of radial air passages 130, for example two, may be disposed between adjacent air passage areas. One end of each of the two radial air passages 130, which is connected to the first circumferential air passage 121, may be communicated, that is, each of the two radial air passages 130 may introduce the air flow into the air passage areas on both sides; one end of the two radial air passages 130, which is connected to the first circumferential air passage 121, may not be communicated, that is, each radial air passage 130 is led into the air passage area on one side far away from the other radial air passage 130.
In a specific embodiment, each of the reflow air paths 140 communicates with six second circumferential air paths 122, and each of the reflow air paths 140 is located in the middle of two corresponding second circumferential air paths 122, so that the air flow in the reflow air paths 140 can be diffused to the second circumferential air paths 122 on both sides, thereby making the adsorption force of the electrostatic chuck 110 more uniform. Of course, the return air path 140 may connect 5, 8, 10 second circumferential air paths 122, and the like, which is not limited herein.
Preferably, the distance between the outer circumferential air channels 120 is smaller than the distance between the remaining inner circumferential air channels 120. Specifically, the distance between the 2 to 3 outer circumferential gas circuits 122 and the distance between the first circumferential gas circuit 121 and the outermost second circumferential gas circuit 122 are a set of same first distances, and the distances between the remaining second circumferential gas circuits 122 are a set of same second distances, where the first distances are smaller than the second distances, so that the outer circumferential gas circuits 120 are denser and have a larger adsorption force. Wherein the first pitch is 2 to 4mm, for example 3 mm; the second pitch is 5 to 9 mm, e.g. 6mm, 7 mm.
Of course, the spacing of the circumferential air passages 120 may increase sequentially radially inward. For example, the distance between the first circumferential gas path 121 and the outermost second circumferential gas path 122 is 3mm, the distance between the innermost two second circumferential gas paths 122 is 7mm, and the distance between the middle plurality of second circumferential gas paths 122 increases inward uniformly.
Preferably, the width of the outermost circumferential air path 120 is greater than the width of the remaining inner circumferential air paths 120. The width of the first circumferential air path 121 is 1.5 to 2.5mm, for example, 2mm, and the width of the second circumferential air path 122 is 0.5 to 1.5mm, for example, 1 mm. In the case where the width of the first circumferential gas path 121 is greater, the first circumferential gas path 121 has a greater flow rate, and thus the edge of the electrostatic chuck 110 can have a greater attraction force.
Further, the radial air passages 130, the return air passages 140, and the outermost circumferential air passages 120 have the same width. For example, the widths of the radial gas path 130, the backflow gas path 140 and the first circumferential gas path 121 are all 2mm, so that the radial gas path 130, the backflow gas path 140 and the first circumferential gas path 121 all have a large flow rate, the backflow process of gas can be smoother, the efficiency is higher, and the problem of uneven adsorption force of the electrostatic chuck 110 cannot be caused.
Preferably, in conjunction with fig. 3-5, the electrostatic chucking device 100 further includes, for example: and a mounting table 160 covering the mounting surface. The electrostatic chuck 110 is provided with a limit step 113 matched with the loading table 160, and the limit step 113 surrounds the outer side of the first circumferential gas path 121, so that the loading table 160 and the limit step 113 can cover the radial gas path 130, the backflow gas path 140 and the circumferential gas path 120 after being matched, and gas is prevented from escaping.
Furthermore, the mounting table 160 is used for placing a wafer, and after the mounting table 160 is matched with the limit step 113, the height of the mounting table 160 is higher than the limit step 113, so that the wafer on the mounting table 160 does not contact with and rub against the top surface of the limit step 113. Of course, the mounting table 160 may be used for placing other semiconductor materials.
Still further, the diameter of the stage 160 is slightly smaller than the wafer placed above it, such as the stage 160 for placing a wafer with a diameter of 150mm, which may be 144 to 148mm, such as 146 mm.
The material of the stage 160 is, for example, silicon carbide, and the material of the electrostatic chuck 110 is, for example, polyetheretherketone.
Preferably, with continued reference to fig. 3-5, the electrostatic chucking device 100 further comprises, for example: and a susceptor 150 positioned below the electrostatic chuck 110 to support the electrostatic chuck 110 and to supply gas to the electrostatic chuck 110. A columnar cavity 153 is formed in the base 150, and a through hole matching and connecting with the air hole 111 of the electrostatic chuck 110 is formed in the top of the columnar cavity 153, so that air can be introduced into the air hole 111.
Further, referring to fig. 6, the bottom of the electrostatic chuck 110 is provided with a mounting groove 112 sleeved on the top of the base 150. Wherein the mounting groove 112 is concentric with the electrostatic chuck 110, so that the electrostatic chuck 110 can be stably mounted on the top of the base 150. In addition, gas is less likely to escape from between the electrostatic chuck 110 and the base 150 than in a connection method in which the mounting groove 112 is not provided.
Preferably, referring to fig. 7, the base 150 includes, for example: a plurality of annular air passages 151 and a plurality of second radial air passages 152 on the top surface of the base 150. Each second radial air passage 152 is radially disposed and is communicated with a plurality of the annular air passages 151.
Further, the base 150 and the electrostatic chuck 110 may be formed as an integrated structure, in which the air holes 111 are connected to the cylindrical cavity 153 of the base 150. And the plurality of circular air passages 151 and the second radial air passages 152 on the base 150 need not be provided.
[ second embodiment ]
A second embodiment of the present invention provides a photoresist stripper (not shown in the drawings) comprising the electrostatic chucking device 100 of the first embodiment. The electrostatic chuck apparatus 100 may be used for fixing the wafer in the photoresist stripping process of the photoresist stripper, for example, being installed in the photoresist stripping chamber.
Preferably, the photoresist remover is a full-automatic photoresist remover or a semi-automatic photoresist remover.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. An electrostatic chucking device, comprising:
an electrostatic chuck provided with a placement surface, the placement surface comprising:
a plurality of circumferential gas paths forming a concentric multilayer structure in the radial direction;
the radial air passages are communicated with the air holes in the center of the placing surface and the circumferential air passages on the outermost layer and are blocked from the rest circumferential air passages;
each backflow gas path is communicated with all the circumferential gas paths between any two adjacent radial gas paths, and one end, facing the air holes, of each backflow gas path is communicated with the circumferential gas path at the innermost side and is blocked by the air holes;
and the air flow is blown out from the air holes and flows to the circumferential air path on the outermost side along the plurality of radial air paths, then flows to the backflow air path and then flows to the circumferential air paths on two sides of the backflow air path.
2. The electrostatic chucking device of claim 1, wherein there are four of said radial gas paths and equally divide said resting surface into four identical gas path regions, each of said gas path regions being provided with one of said return gas paths, each of said return gas paths equally dividing a corresponding said gas path region into two sides, each side being provided with a plurality of said circumferential gas paths connected to said return gas path.
3. The electrostatic chucking device as claimed in claim 2, wherein each of said return air passages communicates with said innermost circumferential air passage toward an end of said air hole.
4. The electrostatic chucking device of claim 1, wherein the outer ones of said circumferential gas passages have a pitch that is less than the pitch of the remaining ones of said circumferential gas passages on the inner side.
5. The electrostatic chucking device as claimed in claim 1, wherein said circumferential air path on the outermost side has a width larger than a width of the remaining circumferential air paths on the inner side.
6. The electrostatic chucking device of claim 1, wherein said radial gas passages, said return gas passages and said outermost circumferential gas passages are equal in width.
7. The electrostatic chucking device of claim 1, further comprising:
a base located below the electrostatic chuck, comprising:
a plurality of circular gas circuits;
the plurality of second radial gas passages are communicated with the plurality of circular gas passages;
and the bottom of the electrostatic chuck is provided with a mounting groove sleeved on the top of the base.
8. The electrostatic chucking device of claim 1, further comprising:
a placing table which is covered on the placing surface;
wherein, the static chuck is provided with a limit step matched with the loading table.
9. A resist remover comprising the electrostatic chucking device as claimed in any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110370121.5A CN112802794B (en) | 2021-04-07 | 2021-04-07 | Electrostatic chuck device and degumming machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110370121.5A CN112802794B (en) | 2021-04-07 | 2021-04-07 | Electrostatic chuck device and degumming machine |
Publications (2)
| Publication Number | Publication Date |
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| JP2002170868A (en) * | 2000-11-30 | 2002-06-14 | Kyocera Corp | Electrostatic chuck |
| KR20050069684A (en) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | Temperature control device for semiconductor wafer esc and temperature control method |
| JP2006303514A (en) * | 2006-05-01 | 2006-11-02 | Fujitsu Ltd | Electrostatic chuck, depositing method and etching method |
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| JP4445318B2 (en) * | 2004-04-21 | 2010-04-07 | 株式会社ビービーエス金明 | Vacuum chuck for wafer |
| JP4423357B1 (en) * | 2008-10-24 | 2010-03-03 | 株式会社タンケンシールセーコウ | Vacuum adsorption device |
| CN102270596B (en) * | 2010-06-02 | 2013-09-11 | 上海微电子装备有限公司 | Sucking disc and sheet-holding table |
| KR101282839B1 (en) * | 2010-12-20 | 2013-07-05 | 쿠어스텍아시아 유한회사 | A porous chuck of improved vacuum suction power |
| US8616539B2 (en) * | 2011-12-16 | 2013-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Track spin wafer chuck |
| CN105332992B (en) * | 2014-07-30 | 2018-01-12 | 睿励科学仪器（上海）有限公司 | Vacuum cup |
| CN104538341B (en) * | 2014-12-17 | 2017-06-27 | 中国地质大学（北京） | A kind of vacuum chamber electrostatic chuck adjusting means |
| KR101739969B1 (en) * | 2016-01-26 | 2017-06-09 | (주)에스티아이 | Substrate holding apparatus |
| CN109461691A (en) * | 2017-09-06 | 2019-03-12 | 富士迈半导体精密工业（上海）有限公司 | Wafer support device |
| CN110620074A (en) * | 2018-06-19 | 2019-12-27 | 北京北方华创微电子装备有限公司 | Base assembly and reaction chamber |
| CN112593199B (en) * | 2020-11-25 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device |
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| JP2002170868A (en) * | 2000-11-30 | 2002-06-14 | Kyocera Corp | Electrostatic chuck |
| KR20050069684A (en) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | Temperature control device for semiconductor wafer esc and temperature control method |
| JP2006303514A (en) * | 2006-05-01 | 2006-11-02 | Fujitsu Ltd | Electrostatic chuck, depositing method and etching method |
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