CN112787620A - Surface acoustic wave resonator with multilayer film structure and manufacturing method - Google Patents
Surface acoustic wave resonator with multilayer film structure and manufacturing method Download PDFInfo
- Publication number
- CN112787620A CN112787620A CN202110040852.3A CN202110040852A CN112787620A CN 112787620 A CN112787620 A CN 112787620A CN 202110040852 A CN202110040852 A CN 202110040852A CN 112787620 A CN112787620 A CN 112787620A
- Authority
- CN
- China
- Prior art keywords
- layer
- lambda
- thickness
- electrode
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910012463 LiTaO3 Inorganic materials 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a surface acoustic wave resonator with a multilayer film structure and a manufacturing method thereof, wherein the resonator comprises: the substrate, the bottom high-acoustic-velocity layer, the bottom oxide layer and the material are single crystal 64-degree YX LiTaO3A piezoelectric film with a thickness of 0.3-0.7 μm or 2 μm, electrodes, a top oxide layer, and a top high acoustic velocity layer. The manufacturing method comprises the following steps: the method comprises the steps of obtaining a first bonding layer, obtaining a second bonding layer, and bonding the bottom oxidation layer of the first bonding layer and the piezoelectric film of the second bonding layer at low temperature. The surface acoustic wave resonator with the multilayer film structure has high Q and FOM value and higher comprehensive performance.
Description
Technical Field
The invention relates to an acoustic wave resonator/filter, in particular to a high-Q high-FOM acoustic surface wave resonator with a multilayer film structure in a radio frequency front end of a mobile phone and a manufacturing method thereof.
Background
With the advent of the 5G era, the demand for data transmission speed has become higher. To support sufficient data transmission rates within a limited bandwidth, higher demands are placed on various performances of the radio frequency front end of the mobile device, and in particular, the design of filters becomes more challenging.
Surface Acoustic Wave (SAW), Bulk Acoustic Wave (BAW), and thin film bulk acoustic wave (FBAR) are three major mainstream technologies in the field of current mobile device filters. The low frequency and the middle frequency band mainly use a SAW filter. Its technology has evolved from Normal-SAW, TC-SAW, and further to IHP-SAW, as well as future XBAR technologies.
IHP-SAW filters are a major development trend in the SAW filter industry at present, with their excellent temperature compensation performance and low insertion loss, comparable to or even exceeding that of part of BAW and FBAR filters.
The IHP-SAW technology employs a hybrid technology similar to the multilayer reflective gate structure of SAW device + SMR-BAW device. The multilayer reflective gate structure of the IHP-SAW is realized by alternately stacking high acoustic impedance and low acoustic impedance. TCF (Temperature Coefficient of Frequency) is mostly adopted as a material with a positive Temperature Coefficient for the low acoustic impedance material, such as silicon dioxide; the high acoustic impedance layer is usually made of a material with a low temperature coefficient, such as SiN, W, etc. The mixed structure technology not only simplifies the single-side processing technology of the SAW device, but also endows the SMR-BAW device with the characteristic of low energy leakage.
The IHP-SAW filter has three advantages that:
1. a high Q value;
2. low frequency Temperature Coefficient (TCF);
3. and (4) good heat dissipation performance.
The IHP-SAW filter adopts a multilayer reflection grating structure of SMR-BAW, so that more surface acoustic wave energy can be focused on the surface of the substrate, the loss of acoustic waves in the transmission process is reduced, and the Q value of the device is improved. The high Q characteristic provides high out-of-band rejection, sharp passband edge roll-off, and high isolation.
Center frequency f of IHP-SAW mentioned in "A Novel 3.5GHz Low-Loss Bandpass Filter Using I.H.P.SAW detectors" (Yuichi Takamine, Tsutomu Takai, Hideki Iwamoto, Takeshi Nakao and Masayoshi Koshino.Murata Manufacturing Co.Ltd.)03.69GHz, Q2500, electromechanical coupling coefficient K 28%, FOM 200, and insertion loss 1.7 dB. FOM ═ k2Q and FOM are comprehensive indexes of the resonator, the FOM values of SAW and TC-SAW are less than 100, and the FOM values of IHP SAW and FBAR are both less than or equal to 200. Resonators with FOM values greater than 200 are very rare.
On the other hand, however, the conventional IHP-SAW filter has the following problems:
firstly, the center frequency of the high-frequency IHP-SAW is about 3.69GHz, and the requirement of the working frequency of a communication frequency band n77(3.3-4.2GHz) cannot be completely met;
the quality factor Q of the high-frequency IHP-SAW is 2500, the insertion loss is 1.7dB, and the requirements of low insertion loss, high out-of-band rejection, steep passband edge roll-off and high isolation of 5G communication are not met;
FOM value Q k of three, high frequency IHP-SAW2200, the requirement of high performance of 5G communication is not satisfied.
Therefore, a surface acoustic wave resonator having higher overall performance is now demanded.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter; nor is it intended to be used as an aid in determining or limiting the scope of the claimed subject matter.
The invention provides a surface acoustic wave resonator with a multilayer film structure, wherein the multilayer film sequentially comprises the following components from bottom to top: the material is a substrate with Si thickness of 350 μm, a bottom high-speed sound velocity layer with thickness of 0.4-1.4 λ or 1.8-2 λ, a bottom oxidation layer with thickness of 0.2-1.2 λ or 1.8-2 λ, and a single crystal of 64 degree YX LiTaO3A piezoelectric film having a thickness of 0.3-0.7 λ or 2 λ, an electrode having a thickness of 80nm, a top oxide layer having a thickness of 0.2-0.3 λ or 1.2 λ or 1.6 λ, and a top hypersonic layer having a thickness of 0.4-0.6 λ or 1.6-2 λ. λ is the wavelength of the acoustic wave excited by the electrode fingers, and λ is 1 μm. The materials of the bottom high acoustic velocity layer and the top high acoustic velocity layer are selected from SiC, SiN, sapphire and W. The bottom oxide layer and the top oxide layer are both made of SiO2Or a spinel.
The electrode is a laminated body of a first layer of Ni, a second layer of Mo and a third layer of Al-Cu alloy. The electrode duty cycle was 0.5 and the number of electrode pairs was 95.
The invention relates to a method for manufacturing a surface acoustic wave resonator with a multilayer film structure, which comprises the following steps: the method comprises the steps of obtaining a first bonding layer, obtaining a second bonding layer, and bonding the bottom oxidation layer of the first bonding layer and the piezoelectric film of the second bonding layer at low temperature.
Wherein obtaining a first bonding layer comprises: providing a substrate with the thickness of 350 μm, performing CMP thinning treatment on the substrate, and depositing a bottom high-speed sound velocity layer with the thickness of 0.4-1.4 lambda or 1.8-2 lambda on the substrate by one of PECVD, PVD, CVD and MOCVD. And depositing a bottom oxide layer with a thickness of 0.2-1.2 lambda or 1.8-2 lambda on the bottom high-speed layer.
Wherein a second bonding layer is obtained comprising: form single crystal of 64 degree YX LiTaO3The piezoelectric film with the thickness of 0.3-0.7 lambda or 2 lambda is characterized in that an electrode with the thickness of 80nm is deposited on one surface of the piezoelectric film through an evaporation method or a sputtering method, the electrode is a laminated body with a first layer of Ni, a second layer of Mo, a third layer of Al-Cu alloy, the duty ratio of the electrode is 0.5, the number of electrode pairs is 95, a top oxidation layer with the thickness of 0.2-0.3 lambda or 1.2 lambda or 1.6 lambda is deposited on the electrode, and a top high sound velocity layer with the thickness of 0.4-0.6 lambda or 1.6-2 lambda is deposited on the top oxidation layer.
These and other features and advantages will become apparent upon reading the following detailed description and upon reference to the accompanying drawings. It is to be understood that both the foregoing general description and the following detailed description are explanatory only and are not restrictive of aspects as claimed.
Drawings
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. The drawings are only schematic and are not to be construed as limiting the actual dimensional proportions.
Fig. 1 is a schematic view of a structure of a surface acoustic wave resonator according to the present invention;
FIG. 2 is a schematic diagram of Q value of a surface acoustic wave resonator according to the present invention as a function of thickness of a piezoelectric film;
FIG. 3 is a schematic representation of the Q-value of a SAW resonator according to the present invention as a function of the thickness of the bottom high acoustic velocity layer;
FIG. 4 is a schematic representation of the Q-value of a SAW resonator according to the present invention as a function of top high acoustic velocity layer thickness;
FIG. 5 is a graph showing the variation of Q value of a SAW resonator with thickness of a bottom oxide layer according to the present invention;
FIG. 6 is a graph showing the variation of Q of a SAW resonator with the thickness of the top oxide layer in accordance with the present invention;
FIG. 7 is a surface acoustic wave resonator k according to the present invention2Schematic diagram of variation with thickness of piezoelectric film;
FIG. 8 is a surface acoustic wave resonator k according to the present invention2Schematic diagram along with the thickness change of the bottom high sound velocity layer;
FIG. 9 is a surface acoustic wave resonator k according to the present invention2Schematic diagram of the variation of the thickness of the top high sound velocity layer;
FIG. 10 is a surface acoustic wave resonator k according to the present invention2Schematic diagram of the variation with the thickness of the bottom oxide layer;
FIG. 11 is a surface acoustic wave resonator k according to the present invention2Schematic diagram of the variation with the thickness of the top oxide layer;
fig. 12 is a flow chart of manufacturing a surface acoustic wave resonator according to the present invention.
Detailed Description
The invention uses LiTaO3The single crystal piezoelectric film is combined with the high acoustic velocity and the oxide layer, POI structures are formed on the upper portion and the lower portion of the IDT electrode, the thickness of the piezoelectric film is 0.3-0.7 lambda or 2 lambda, the thickness of the bottom high acoustic velocity layer is 0.4-1.4 lambda or 1.8-2 lambda, the thickness of the top high acoustic velocity layer is 0.4-0.6 lambda or 1.6-2 lambda, the thickness of the bottom oxide layer is 0.2-1.2 lambda or 1.8-2 lambda, and the thickness of the top oxide layer is 0.2-0.3 lambda or 1.2 lambda or 1.6 lambda, so that the surface acoustic wave resonator with high frequency, high Q value and high FOM value can be obtained, the Q value is not less than 4000, the FOM value is not less than 230, the working frequency is 4.2GHz-4.6GHz, and the working frequency.
Wherein, preferably, when the thickness of the piezoelectric film is 0.3 lambda, the thickness of the bottom high sound velocity layer is 0.4-1.4 lambda or 1.8-2 lambda, the thickness of the top high sound velocity layer is 0.4-0.6 lambda or 2 lambda, the thickness of the bottom oxidation layer is 0.2-0.4 lambda, and the thickness of the top oxidation layer is 0.2-0.3 lambda, the electromechanical coupling systemNumber k2≥7％。
And wherein, still more preferably, when the thickness of the piezoelectric film is 0.3 lambda, the thickness of the bottom high sound velocity layer is 0.4 lambda, the thickness of the top high sound velocity layer is 0.4 lambda, the thickness of the bottom oxidation layer is 0.2-0.3 lambda, and the thickness of the top oxidation layer is 0.2 lambda, the main mode has no stray.
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. The following embodiments are provided so that the invention may be more fully understood. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by those of skill in the art to which this application belongs. The terms "front, back, up, down" and the like are used only for expressing relative positions without other limiting meanings.
First, a surface acoustic wave resonator of the present invention is explained with reference to fig. 1.
The surface acoustic wave resonator comprises a substrate 3, a bottom high-acoustic-velocity layer 4, a bottom oxidation layer 5, a piezoelectric film 6, an electrode 1, a top oxidation layer 7 and a top high-acoustic-velocity layer 8 from bottom to top in sequence. Each of the high acoustic velocity layers together with an oxide layer thereon constitutes a POI structure.
The resonator utilizes SH0And the working frequency of the surface wave is 4GHz-4.6 GHz.
The material of the substrate 3 is preferably Si; the high sound velocity material used for the bottom high sound velocity layer 4 and the top high sound velocity layer 8 is SiN, sapphire, W, SiC; the material of the bottom oxide layer 5 and the top oxide layer 7 is SiO2Spinel; the material of the piezoelectric film 6 is single crystal 64 degrees YXLiTaO3。
Sound velocity relation: the sound velocity of the high sound velocity layer is greater than that of the piezoelectric film and is greater than that of the oxide layer.
The electrode is an IDT electrode and is made of a metal or alloy such as Ti, Al, Cu, Au, Pt, Ag, Mo, Ni, or a laminate of these metals or alloys, and the electrode material is preferably Ni as a first layer, Mo as a second layer, and Al — Cu alloy as a third layer, with Ni being thicker than Au. The electrode duty ratio is the electrode width/(electrode width + electrode spacing), the number of electrode pairs is adjusted according to the product design, and the number of electrode pairs is preferably 95 pairs.
Electromechanical coupling coefficient k of resonatort 2＝(π2/8)(fp 2-fs2)/fs 2Wherein fs is the resonance frequency and fp is the antiresonance frequency.
The thickness of each layer is adjusted according to the product design: the substrate thickness is preferably 350 μm, the bottom acoustic velocity layer thickness is 0.4-1.4 λ or 1.8-2 λ, preferably 0.4 λ, the piezoelectric film thickness is 0.3-0.7 λ or 2 λ, preferably 0.3 λ, the top acoustic velocity layer thickness is 0.4-0.6 λ or 1.6-2 λ, preferably 0.4 λ, the bottom oxide layer thickness is 0.2-1.2 λ or 1.8-2 λ, preferably 0.2-0.3 λ, the top oxide layer thickness is 0.2-0.3 λ or 1.2 λ or 1.6 λ, preferably 0.2 λ. λ is the wavelength of the acoustic wave excited by the electrode fingers, and λ is 1 μm.
The acoustic surface wave resonator with high frequency, high Q value and high FOM value can be obtained by the value, the Q value is more than or equal to 4000, the FOM value is more than or equal to 230, the working frequency is 4.2GHz-4.6GHz, and the electromechanical coupling coefficient k is realized2Not less than 7%, and no stray in main mode.
In the examples of fig. 2-11, the thickness of the electrode is 80nm, the duty ratio is 0.5, the operating frequency band is 4.2-4.6GHz, and the piezoelectric thin film material is 64 ° YX tangential LiTaO3。
Fig. 2 is a schematic diagram showing the variation of the Q value of the surface acoustic wave resonator according to the thickness of the piezoelectric film. As can be seen from the figure, when the thickness of the piezoelectric film is 0.3-0.7 lambda or 2.0 lambda, Q is more than or equal to 5900, and FOM is more than or equal to 230.
Fig. 3 is a diagram illustrating the variation of Q-value of the surface acoustic wave resonator according to the present invention with the thickness of the bottom high acoustic velocity layer. As can be seen, when the thickness of the bottom high sound velocity layer is 0.4-1.4 lambda and 1.8 lambda-2.0 lambda, Q is not less than 4300 and FOM is not less than 315.
Fig. 4 is a diagram showing the variation of Q value of the surface acoustic wave resonator according to the present invention with the thickness of the top high acoustic velocity layer. As can be seen from the figure, when the thickness of the top high sound velocity layer is 0.4-0.6 lambda and 1.6 lambda-2.0 lambda, Q is not less than 4500, FOM is not less than 271.
Fig. 5 is a diagram illustrating the variation of Q value of the surface acoustic wave resonator according to the thickness of the bottom oxide layer. As can be seen from the figure, when the thickness of the bottom oxide layer is 0.2-1.2 lambda and 1.8 lambda-2.0 lambda, Q is not less than 4000, and FOM is not less than 252.
Fig. 6 is a schematic diagram of the Q value of a surface acoustic wave resonator according to the present invention as a function of the thickness of the top oxide layer. As can be seen from the figure, when the thickness of the top oxide layer is 0.2-0.3 lambda, 1.2 lambda and 1.6 lambda, Q is not less than 5000, and FOM is not less than 295.
FIG. 7 is a surface acoustic wave resonator k according to the present invention2Schematic diagram of the change of the thickness of the piezoelectric film. As can be seen, k is the value of k at a thickness of the piezoelectric film of 0.1 to 0.3. lambda2≥7％。
FIG. 8 is a surface acoustic wave resonator k according to the present invention2Schematic representation of the variation with the thickness of the bottom high acoustic velocity layer. As can be seen, k is the value at the bottom of the high acoustic velocity layer at a thickness of 0.1-2.0. lambda2≥7％。
FIG. 9 is a surface acoustic wave resonator k according to the present invention2Schematic representation of the variation with top high acoustic velocity layer thickness. As can be seen, k is the value obtained when the thickness of the top high-velocity layer is 0.1-1.0. lambda2≥7％。
FIG. 10 is a surface acoustic wave resonator k according to the present invention2The thickness of the bottom oxide layer is changed. As can be seen, k is the value obtained when the thickness of the bottom oxide layer is 0.1-0.4. lambda2≥7％。
FIG. 11 is a surface acoustic wave resonator k according to the present invention2The variation of the thickness of the top oxide layer is shown schematically. As can be seen, k is the value of k when the thickness of the top oxide layer is 0.2-0.4. lambda2≥7％。
Fig. 12 is a flow chart of manufacturing a surface acoustic wave resonator according to the present invention.
In the step (a), a substrate wafer is subjected to CMP thinning to obtain a substrate 3;
in the step (b), a bottom high-sound-velocity layer 4 is deposited on the thinned substrate 3 by methods such as PECVD, PVD, CVD, MOCVD and the like;
in step (c), depositing a bottom oxide layer 5 on the bottom high acoustic velocity layer 4;
thereby forming a first bonding layer consisting of the substrate 3, the bottom high acoustic velocity layer 4, and the bottom oxide layer 5;
in step (d) in LiTaO3Depositing an IDT electrode on the surface of the piezoelectric film 6 by an evaporation or sputtering method, wherein the electrode is formed by stacking a plurality of metal layers and needs to be deposited for a plurality of times (not shown in the figure);
in step (e), depositing a top oxide layer 7 on the IDT electrode by PECVD, PVD, CVD, MOCVD, or the like;
in step (f), depositing a top high acoustic velocity layer 8 on the top oxide layer 7;
thereby forming a second bonding layer of the piezoelectric thin film 6, the top oxide layer 7, and the top high acoustic velocity layer 8;
in the step (g), the first bonding layer and the second bonding layer are bonded at low temperature, wherein the bonding temperature is less than or equal to 300 ℃;
in step (h), cooling is carried out at a temperature not exceeding 15 ℃/sec.
The following table shows the Q value, FOM value, k of the resonator2Along with the bottom and top oxide layers, the bottom and top hypersonic layers change a list:
according to the invention, an oxide layer and a high sound velocity layer are deposited on the IDT electrode, the oxide layer and the high sound velocity layer above the electrode form a POI structure at the same time, and the thickness of the top oxide layer is adjusted according to the design requirement of a product, preferably 0.2 lambda; the thickness of the electrode is adjusted according to the design requirement of the product, and is preferably 0.07-0.08 lambda; the thickness of the piezoelectric film is adjusted according to the design requirement of a product, and is preferably 0.3 lambda; the thickness of the bottom oxidation layer is adjusted according to the design requirement of the product, and is preferably 0.3 lambda; the thickness of the top high-speed substrate is adjusted according to the design requirement of a product, and is preferably 0.4 lambda; the thickness of the bottom high-speed substrate is adjusted according to the design requirement of a product, and is preferably 0.4 lambda; the piezoelectric material is preferably single crystal 30 degree YX LiTaO3、36°YX LiTaO3-42°YX LiTaO3(ii) a The electrode material is preferably a first layer of Ni, a second layer of Mo and a third layer of Al-Cu alloy, wherein the thickness of Ni is thicker than that of Au. Such a selection of parameters is such thatThe surface acoustic wave resonator has high Q and FOM value and higher comprehensive performance.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure, and the present disclosure should be construed as being covered by the claims and the specification.
Claims (10)
1. A surface acoustic wave resonator of a multilayer film structure, comprising:
a substrate;
a bottom high acoustic velocity layer located over the substrate;
a bottom oxide layer located above the bottom high acoustic velocity layer;
a piezoelectric film on the bottom oxide layer, wherein the piezoelectric film is made of single crystal 64 degrees YXLITaO3The thickness is 0.3-0.7 lambda or 2 lambda, wherein lambda is the wavelength of the sound wave excited by the electrode fingers;
an electrode located over the piezoelectric film;
a top oxide layer overlying the electrode; and
a top high acoustic velocity layer over the top oxide layer.
2. A surface acoustic wave resonator as set forth in claim 1, wherein:
the substrate is made of Si;
the materials of the bottom high-sound-velocity layer and the top high-sound-velocity layer are selected from SiC, SiN, sapphire and W;
the bottom oxide layer and the top oxide layer are both made of SiO2Or a spinel.
3. A surface acoustic wave resonator as set forth in claim 1, wherein:
the thickness of the substrate is 350 μm;
the thickness of the bottom high sound velocity layer is 0.4-1.4 lambda or 1.8-2 lambda;
the thickness of the bottom oxidation layer is 0.2-1.2 lambda or 1.8-2 lambda;
the thickness of the electrode is 80 nm;
the thickness of the top oxidation layer is 0.2-0.3 lambda or 1.2 lambda or 1.6 lambda;
the thickness of the top high sound velocity layer is 0.4-0.6 lambda or 1.6-2 lambda
Where λ is 1 μm.
4. A surface acoustic wave resonator as set forth in claim 1, wherein said electrode is a laminated body of a first layer of Ni, a second layer of Mo, and a third layer of Al — Cu alloy.
5. A surface acoustic wave resonator as set forth in claim 1, wherein the duty ratio of said electrodes is 0.5, and the number of pairs of said electrodes is 95 pairs.
6. A method for manufacturing a surface acoustic wave resonator having a multilayer film structure, comprising the steps of:
obtaining a first bonding layer comprising:
providing a substrate, and carrying out CMP thinning treatment on the substrate;
depositing a bottom high acoustic velocity layer on the substrate; and
depositing a bottom oxide layer on the bottom high acoustic velocity layer;
obtaining a second bonding layer comprising:
form single crystal of 64 degree YX LiTaO3The thickness of the piezoelectric film is 0.3-0.7 lambda or 2 lambda, wherein lambda is the wavelength of sound waves excited by the electrode fingers;
depositing an electrode on one surface of the piezoelectric film;
depositing a top oxide layer on the electrode; and
depositing a top high acoustic velocity layer on the top oxide layer;
and bonding the bottom oxide layer of the first bonding layer and the piezoelectric film of the second bonding layer at a low temperature.
7. The method of claim 6, wherein:
the thickness of the substrate is 350 μm;
the thickness of the bottom high sound velocity layer is 0.4-1.4 lambda or 1.8-2 lambda;
the thickness of the bottom oxidation layer is 0.2-1.2 lambda or 1.8-2 lambda;
the thickness of the electrode is 80 nm;
the thickness of the top oxidation layer is 0.2-0.3 lambda or 1.2 lambda or 1.6 lambda;
the thickness of the top high sound velocity layer is 0.4-0.6 lambda or 1.6-2 lambda;
where λ is 1 μm.
8. The method of claim 6, wherein the bottom high acoustic velocity layer is deposited by one of PECVD, PVD, CVD, MOCVD.
9. The method of claim 6, wherein the electrode is a stack of a first layer of Ni, a second layer of Mo, and a third layer of an Al-Cu alloy, the duty cycle of the electrode is 0.5, and the number of electrode pairs is 95.
10. The method of claim 6, wherein the electrode is deposited by evaporation or sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110040852.3A CN112787620A (en) | 2021-01-13 | 2021-01-13 | Surface acoustic wave resonator with multilayer film structure and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110040852.3A CN112787620A (en) | 2021-01-13 | 2021-01-13 | Surface acoustic wave resonator with multilayer film structure and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112787620A true CN112787620A (en) | 2021-05-11 |
Family
ID=75755587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110040852.3A Pending CN112787620A (en) | 2021-01-13 | 2021-01-13 | Surface acoustic wave resonator with multilayer film structure and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112787620A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200274513A1 (en) * | 2019-02-26 | 2020-08-27 | Skyworks Solutions, Inc. | Method of manufacturing acoustic wave device with multi-layer substrate including ceramic |
| US11824515B2 (en) | 2018-06-11 | 2023-11-21 | Skyworks Solutions, Inc. | Acoustic wave device with spinel layer and temperature compensation layer |
| US12063027B2 (en) | 2018-11-21 | 2024-08-13 | Skyworks Solutions, Inc. | Acoustic wave device with ceramic substrate |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714858A (en) * | 2004-03-29 | 2010-05-26 | 株式会社村田制作所 | Process for a boundary acoustic wave device |
| CN102474238A (en) * | 2009-07-17 | 2012-05-23 | 株式会社村田制作所 | Surface acoustic wave device |
| JP2015115870A (en) * | 2013-12-13 | 2015-06-22 | 株式会社村田製作所 | Acoustic wave device |
| JP2015119310A (en) * | 2013-12-18 | 2015-06-25 | 株式会社村田製作所 | Surface acoustic wave filter |
| CN106416067A (en) * | 2014-06-26 | 2017-02-15 | 株式会社村田制作所 | Cleaning-in-place method and device |
| CN205992889U (en) * | 2014-03-31 | 2017-03-01 | 株式会社村田制作所 | SAW filter |
| CN108039872A (en) * | 2017-12-26 | 2018-05-15 | 海宁市瑞宏科技有限公司 | A kind of resonator structure for high-performance SAW filter designs |
| CN110601677A (en) * | 2018-06-13 | 2019-12-20 | 天工方案公司 | Spurious shear horizontal mode frequency control with high-speed layer added in lithium niobate filter |
| CN111510106A (en) * | 2020-05-06 | 2020-08-07 | 中电科技德清华莹电子有限公司 | Surface acoustic wave resonant structure filter |
| CN111602337A (en) * | 2018-01-12 | 2020-08-28 | 株式会社村田制作所 | Elastic wave device, multiplexer, high-frequency front-end circuit, and communication device |
-
2021
- 2021-01-13 CN CN202110040852.3A patent/CN112787620A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714858A (en) * | 2004-03-29 | 2010-05-26 | 株式会社村田制作所 | Process for a boundary acoustic wave device |
| CN102474238A (en) * | 2009-07-17 | 2012-05-23 | 株式会社村田制作所 | Surface acoustic wave device |
| JP2015115870A (en) * | 2013-12-13 | 2015-06-22 | 株式会社村田製作所 | Acoustic wave device |
| JP2015119310A (en) * | 2013-12-18 | 2015-06-25 | 株式会社村田製作所 | Surface acoustic wave filter |
| CN205992889U (en) * | 2014-03-31 | 2017-03-01 | 株式会社村田制作所 | SAW filter |
| CN106416067A (en) * | 2014-06-26 | 2017-02-15 | 株式会社村田制作所 | Cleaning-in-place method and device |
| CN108039872A (en) * | 2017-12-26 | 2018-05-15 | 海宁市瑞宏科技有限公司 | A kind of resonator structure for high-performance SAW filter designs |
| CN111602337A (en) * | 2018-01-12 | 2020-08-28 | 株式会社村田制作所 | Elastic wave device, multiplexer, high-frequency front-end circuit, and communication device |
| CN110601677A (en) * | 2018-06-13 | 2019-12-20 | 天工方案公司 | Spurious shear horizontal mode frequency control with high-speed layer added in lithium niobate filter |
| CN111510106A (en) * | 2020-05-06 | 2020-08-07 | 中电科技德清华莹电子有限公司 | Surface acoustic wave resonant structure filter |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11824515B2 (en) | 2018-06-11 | 2023-11-21 | Skyworks Solutions, Inc. | Acoustic wave device with spinel layer and temperature compensation layer |
| US12063027B2 (en) | 2018-11-21 | 2024-08-13 | Skyworks Solutions, Inc. | Acoustic wave device with ceramic substrate |
| US20200274513A1 (en) * | 2019-02-26 | 2020-08-27 | Skyworks Solutions, Inc. | Method of manufacturing acoustic wave device with multi-layer substrate including ceramic |
| US11621690B2 (en) * | 2019-02-26 | 2023-04-04 | Skyworks Solutions, Inc. | Method of manufacturing acoustic wave device with multi-layer substrate including ceramic |
| US11876501B2 (en) | 2019-02-26 | 2024-01-16 | Skyworks Solutions, Inc. | Acoustic wave device with multi-layer substrate including ceramic |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112787620A (en) | Surface acoustic wave resonator with multilayer film structure and manufacturing method | |
| CN112653415A (en) | Multilayer film surface acoustic wave resonator and manufacturing method thereof | |
| KR101516653B1 (en) | Elastic surface wave filter device | |
| EP2628246B1 (en) | Wide-band acoustically coupled thin-film baw filter | |
| US5909156A (en) | Surface acoustic wave device with multilayer electrodes and method for manufacturing the same | |
| US7459991B2 (en) | SAW component having an improved temperature coefficient | |
| WO2012086441A1 (en) | Elastic wave device and production method thereof | |
| CN109245742B (en) | Film bulk acoustic wave combined resonator based on surface acoustic wave and solid reflection layer | |
| CN103250348A (en) | Surface acoustic wave device | |
| CN112217490B (en) | Laminated temperature compensation type surface acoustic wave resonator and packaging method | |
| EP1990915A1 (en) | Acoustic wave device and method for fabricating the same | |
| CN112737543A (en) | High-performance surface acoustic wave resonator based on POI structure and manufacturing method | |
| CN109997307A (en) | Surface acoustic wave device | |
| US8188811B2 (en) | Filtering circuit with coupled acoustic resonators | |
| WO2024160021A1 (en) | Surface acoustic wave filter and manufacturing method therefor | |
| CN112737537A (en) | Double-layer POI structure surface acoustic wave resonator and manufacturing method thereof | |
| JP2008135886A (en) | Manufacturing method of baw resonator | |
| CN112615603B (en) | Scandium-doped aluminum nitride high-frequency resonator with POI structure and manufacturing method | |
| CN112653407B (en) | TC-SAW resonator and manufacturing method thereof | |
| CN112600531A (en) | Narrow-band filter with high-frequency near-zero frequency temperature coefficient and manufacturing method | |
| CN114614790A (en) | Surface acoustic wave filter and method for manufacturing the same | |
| CN112653420A (en) | High-sound-speed high-frequency low-frequency temperature coefficient narrow-band filter and manufacturing method thereof | |
| CN112653421A (en) | High-sound-speed high-frequency high-performance narrow-band filter | |
| CN112511128A (en) | Lamb wave resonator with POI structure and manufacturing method thereof | |
| CN112615601A (en) | High FOM value lamb wave resonator with POI structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210707 Address after: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangna Technology Development Co.,Ltd. Address before: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong guangnaixin Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210811 Address after: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute Address before: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangna Technology Development Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210913 Address after: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong guangnaixin Technology Co.,Ltd. Address before: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute |
|
| TA01 | Transfer of patent application right | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210511 |
|
| WD01 | Invention patent application deemed withdrawn after publication |