CN108039872A - A kind of resonator structure for high-performance SAW filter designs - Google Patents
A kind of resonator structure for high-performance SAW filter designs Download PDFInfo
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- CN108039872A CN108039872A CN201711428559.4A CN201711428559A CN108039872A CN 108039872 A CN108039872 A CN 108039872A CN 201711428559 A CN201711428559 A CN 201711428559A CN 108039872 A CN108039872 A CN 108039872A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- General Physics & Mathematics (AREA)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention provides a kind of resonator structure design for high-performance SAW filter, clutter caused by R wave and bulk wave can be effectively inhibited and responded.The resonator structure of this high-performance SAW filter（1）It is by single crystalline Si substrate（2）, multi-layer film structure（7）, YX θ LiTaO3Piezoelectric membrane（5）And interdigital electrode IDT and reflecting grating based on Al or Cu electrodes（6）Formed Deng being sequentially overlapped to set from the bottom to top.The multi-layer film structure（7）It is by acoustic impedance film（3）With low acoustic impedance film（4）Alternating deposit forms.The resonator structure of the high-performance SAW filter（1）Optimal way it is as follows：The YX θ LiTaO3The Eulerian angles θ and standardization thickness of piezoelectric membrane meet following relation respectively：0≤θ≤60,0.1λ≤h LT≤0.5λ。
Description
Technical field
The present invention relates to the resonator structure design of the SAW device for mobile communication radio-frequency front-end, especially relate to
And a kind of resonator structure for high-performance SAW filter designs.
Background technology
Surface acoustic wave（SAW）For wave filter since its is small, performance is high, and cost rationally becomes mobile phone radio frequency（RF）
Indispensable key components in front end applications.With the popularization of smart mobile phone and Video service, the increasing of mobile data flow
Adduction mobile terminal high data transfer rates become the active demand in current mobile communications.In this case, for filter
Ripple element, in addition to relatively low insertion loss and higher decay, it is also necessary to further to improve the squaring of passband shapes
With the steepness of intermediate zone, this requires have higher quality factor for the SAW resonator of wave filter（Q）With the frequency temperature of smaller
Coefficient（TCF）.Therefore, domestic and foreign scholars, which are directed to finding, can be used in the SAW that exploitation meets contemporary high performance filter demand
Resonator structure.
Found through the literature search to the prior art, 2016, in document " Incredible High Performance
SAW resonator on Novel Multi-layerd Substrate（T. Takai et al., IEEE
International Ultrasonics Symposium Proceedings 2016）" in, Japanese Murata proposes one
Kind is stacked new using the LiTaO3 that rotation Y plates X is propagated with reference to the acoustics Bragg reflector of high and low acoustic impedance material composition
Type layer structure, fabulous high-performance (IHP) SAW resonator is designed to using the structure（Relative to traditional devices Q values
Three times are improved, TCF is reduced to 1/5）, and have developed using the resonator duplexer of a high performance Band25.It is same in this
When, in document " Solidly Mounted Ladder Filter using Shear Horizontal Wave in LiNb03
（M. Kadota et al., IEEE International Ultrasonics Symposium Proceedings
2016）" in, northeastern Japan university it is also proposed a kind of LiNbO3 propagated using rotation Y plates X and combine high and low acoustic impedance material
The layer structure that the acoustics Bragg reflector of composition stacks, using horizontal shear wave, ultra wide band, low is developed into using the structure
The ladder-type filter of loss.
The enlightenment of document based on the prior art, it has been found that the acoustics Prague formed using high and low acoustic impedance material
The layer structure that reflector is formed can reduce leakage of the SAW energy in depth direction, so that the Q of device be greatly improved
Value.But existing technical literature is related to the propagation characteristic and Design of Structural parameters of surface acoustic wave in such layer structure
Have no report, this is the key issue that the urgent need of exploitation towards the high-performance SAW filter of different application demand solves.
The content of the invention
It is an object of the invention to provide a kind of towards the acoustics Bragg reflector formed with high and low acoustic impedance material
The IDT/ YX- θ LiTaO3/SiO of stacking2/ AlN/Si layer structures, and provide the propagation of surface acoustic wave in the layer structure
Characteristic and structure parameter optimizing, resonator of the design with good frequency, temperature stability and high quality factor, for
Exploitation tool high-performance SAW filter.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of resonator structure for high-performance SAW filter designs, it is cut SH using level and cuts ripple, including：Monocrystalline
Si substrates（2）, multi-layer film structure（7）, YX- θ LiTaO3Piezoelectric membrane（5）And the interdigital electricity based on Al or Cu electrodes
Pole IDT and reflecting grating（6）Formed Deng being sequentially overlapped to set from the bottom to top.The multi-layer film structure（7）It is thin by acoustic impedance
Film（3）With low acoustic impedance film（4）Alternating deposit forms.
According to the present invention, there is provided a kind of resonator structure for high-performance SAW filter designs, its feature exists
In
The YX- θ LiTaO3 piezoelectric membranes thickness (h LT) 0.1λ~0.5λIn the range of.
The Eulerian angles θ is 0o~60oIn the range of.
The acoustic impedance film（3）Material use sapphire, aluminium oxide, silicon nitride SiN, aluminium nitride AlN etc., but not
It is limited to this.
The acoustic impedance film（3）Thickness (h AlN) 0.1λ~0.35λIn the range of.
The low acoustic impedance film（4）Material use silica SiO2, silicon oxynitride SiON, tantalum pentoxide Ta2O5
Deng, but not limited to this.
The low acoustic impedance film（4）Thickness (h SiO2) 0.01λ~0.25λIn the range of.
The electrode（6）Thickness (h e) it is 0.8λBelow.
The duty cycle of the IDT electrode is in the range of 0.3 ~ 0.8.
The electrode finger logarithm of the IDT is more than 50.
The electrode finger logarithm of the reflecting grating is more than 30.
Invention effect
In a kind of resonator structure design for high-performance SAW filter of the present invention, it is cut using level
SH cuts ripple, including：Single crystalline Si substrate（2）, multi-layer film structure（7）, YX- θ LiTaO3Piezoelectric membrane（5）And with Al or Cu
Interdigital electrode IDT and reflecting grating based on electrode（6）Formed Deng being sequentially overlapped to set from the bottom to top.The multi-layer film structure
（7）It is by acoustic impedance film（3）With low acoustic impedance film（4）Alternating deposit forms.The multi-layer film structure can be by sound table
The energy of surface wave concentrates on YX- θ LiTaO3In piezoelectric membrane, pass through optimization design structural parameters, the electromechanics of its horizontal shear wave
The coefficient of coup is up to 13.2%, and the electromechanical coupling factor of R wave is less than 0.2%, realizes to random caused by R wave and bulk wave
Really suppress, higher quality factor q can be obtained；And if it is used as high and low acoustic impedance, tool by the use of the opposite material of temperature coefficient
There is natural effect temperature compensation, frequency-temperature characteristic can be improved.
Therefore, using the SAW resonator of structure of the invention, very high electromechanical coupling factor can be obtained, together
When, there are good frequency stability of temperature and very high quality factor, can be effective by effective Optimal Structure Designing
Ground suppresses clutter response caused by R wave and bulk wave.
Brief description of the drawings
Fig. 1（a）、（b）、（c）Be an embodiment of the invention be related to be used for high-performance SAW filter
The plan of resonator structure and amplification represent the part shortcoming amplification main view sectional view of its major part.
Fig. 2 is to represent in embodiments, the electromechanical coupling factor of R wave and SH ripples when thickness of electrode changesK 2's
Variation diagram.
Fig. 3 is to represent in embodiments, the resonance of R wave and SH ripples when thickness of electrode changesV rWith antiresonance phase
SpeedV aVariation diagram.
Fig. 4 is to represent in embodiments, YX- θ LiTaO3Thickness Variation when R wave and SH ripples mechanical-electric coupling
CoefficientK 2Variation diagram.
Fig. 5 is to represent in embodiments, YX- θ LiTaO3Thickness Variation when R wave and SH ripples resonanceV rWith
Antiresonance phase velocityV aVariation diagram.
Fig. 6 is to represent in embodiments, Eulerian angles（0o, θ, 0o）θ change when R wave and SH ripples mechanical-electric coupling
CoefficientK 2Variation diagram.
Fig. 7 is to represent in embodiments, Eulerian angles（0o, θ, 0o）θ change when R wave and SH ripples resonanceV rWith
Antiresonance phase velocityV aVariation diagram.
Embodiment
Hereinafter, the specific embodiment of the present invention is illustrated by referring to accompanying drawing.
Fig. 1（a）Shown is the resonance for high-performance SAW filter that an embodiment of the invention is related to
The plan of device structure,（b）With（c）It is the part shortcoming amplification main view sectional view that amplification represents its major part.
Embodiment 1
A kind of resonator structure for high-performance SAW filter（1）, such as Fig. 1（c）It is shown, use single crystalline Si substrate
（2）, multi-layer film structure（7）, YX- θ LiTaO3Piezoelectric membrane（5）And the interdigital electrode IDT based on Cu electrodes and reflection
Grid（6）Formed Deng being sequentially overlapped to set from the bottom to top.The multi-layer film structure（7）It is by acoustic impedance film（3）In a low voice
Resistance film（4）Alternating deposit forms, such as Fig. 1（b）It is shown.
In the present embodiment, the thickness of single crystalline Si substrate is more than or equal to 2λ, acoustic impedance film and low acoustic impedance film are distinguished
It is that thickness is 0.25λAlN and SiO2Film.YX-θ LiTaO3Piezoelectric membrane thickness is 0.2λ, Eulerian angles are θ=42o, electrode
Thickness range is 0.01λ~0.08λ。
Fig. 2 and Fig. 3 is respectively SAW resonator structure single order Rayleigh under different thickness of electrode in the embodiment
Phase velocity curve at the electromechanical coupling factor and resonance of ripple and second order horizontal shear wave, antiresonance.As shown in Figure 2, it is horizontal
The electromechanical coupling factor of shearing wave first increases and reduces afterwards, be 0.02 in thickness of electrode with the increase of thicknessλWhen, mechanical-electric coupling
Coefficient value is maximum：12%.And the electromechanical coupling factor very little of R wave（Less than 0.2%）And with thickness of electrode change substantially not
Become.As shown in Figure 3, R wave and the phase velocity of horizontal shear wave reduce with the increase of thickness of electrode.Wherein R wave
Phase velocity scope be about 2200 ~ 2800m/s, the phase velocity of horizontal shear wave is about 2500 ~ 4000m/s.
Embodiment 2
The present embodiment, thickness of electrode 0.02λ, YX- θ LiTaO3Piezoelectric membrane thickness range is 0.1λ~2λ, remaining is the same as implementation
Example 1.
Fig. 4 and Fig. 5 be respectively in the embodiment SAW resonator structure in different YX- θ LiTaO3Piezoelectric membrane
The electromechanical coupling factor and resonance of single order R wave and second order horizontal shear wave under thickness, the phase velocity curve at antiresonance.Such as
Shown in Fig. 4, the electromechanical coupling factor of horizontal shear wave first increases and reduces afterwards, in YX- θ LiTaO with the increase of thickness3Pressure
Conductive film thickness is 0.2λWhen, electromechanical coupling factor value is maximum：12%.And the electromechanical coupling factor very little of R wave（It is less than
0.17%）And with YX- θ LiTaO3Piezoelectric membrane thickness change is basically unchanged.As shown in Figure 5, R wave and horizontal shear
The phase velocity of ripple increases with the increase of thickness of electrode.Wherein the phase velocity of R wave about ~ 2800m/s, horizontal shear
The phase velocity of ripple is about ~ 4000m/s.
Embodiment 3
The present embodiment, thickness of electrode 0.02λ, YX- θ LiTaO3Piezoelectric membrane thickness range is 0.2λ, Eulerian angles are θ scopes
For 0o~180 o, remaining is the same as embodiment 1.
Fig. 6 and Fig. 7 is respectively SAW resonator structure single order R wave under different Eulerian angles θ in the embodiment
The phase velocity curve at electromechanical coupling factor and resonance, antiresonance with second order horizontal shear wave.As shown in Figure 6, Euler is worked as
Angle θ is 0o~60 oInterior, the electromechanical coupling factor of horizontal shear wave is 8.7% ~ 12%；It is 25 in Eulerian angles oWhen, electromechanical coupling factor
Value is maximum：13.2%；It is 120 in Eulerian angles oWhen, electromechanical coupling factor is almost 0.And the electromechanical coupling factor of R wave with
The increase of thickness, first increases and reduces afterwards, is 130 in Eulerian angles o, electromechanical coupling factor value maximum：2%.As shown in Figure 7,
The phase velocity of R wave is about ~ 2650m/s, and the phase velocity of horizontal shear wave is about ~ 3500m/s.
The above results are shown：Pass through reasonably optimizing IDT/ YX- θ LiTaO3/SiO proposed by the present invention2/ AlN/Si's is more
Rotating fields, using its horizontal shear wave, can obtain larger electromechanical coupling factor and the higher velocity of sound, can apply to be operated in
The big bandwidth SAW device of GHz.In addition, and the structure use with the opposite high low acoustic impedance material of temperature coefficient, natural tool
There is temperature compensation effect, with good application in terms of the high performance filter with high quality factor and high-temperature stability is manufactured
Prospect.
Claims (11)
1. a kind of resonator structure for high-performance SAW filter designs, it is cut SH using level and cuts ripple, including：It is single
Brilliant Si substrates（2）, multi-layer film structure（7）, YX- θ LiTaO3Piezoelectric membrane（5）It is and interdigital based on Al or Cu electrodes
Electrode IDT and reflecting grating（6）Formed Deng being sequentially overlapped to set from the bottom to top.The multi-layer film structure（7）It is by acoustic impedance
Film（3）With low acoustic impedance film（4）Alternating deposit forms.
2. the resonator structure for high-performance SAW filter designs as claimed in claim 1, it is characterised in that：Institute
State YX- θ LiTaO3Piezoelectric membrane thickness (h LT) 0.1λ~0.5λIn the range of.
3. the resonator structure for high-performance SAW filter designs as claimed in claim 1 or 2, its feature exists
In：The Eulerian angles θ is 0o~60oIn the range of.
4. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 3 designs,
It is characterized in that：The acoustic impedance film（3）Material use sapphire, aluminium oxide, silicon nitride SiN, aluminium nitride AlN etc.,
But not limited to this.
5. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 4 designs,
It is characterized in that：The acoustic impedance film（3）Thickness (h AlN) 0.1λ~0.35λIn the range of.
6. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 5 designs,
It is characterized in that：The low acoustic impedance film（4）Material use silica SiO2, silicon oxynitride SiON, tantalum pentoxide
Ta2O5Deng, but not limited to this.
7. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 6 designs,
It is characterized in that：The low acoustic impedance film（4）Thickness (h SiO2) 0.01λ~0.25λIn the range of.
8. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 7 designs,
It is characterized in that：The electrode（6）Thickness (h e) it is 0.8λBelow.
9. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 8 designs,
It is characterized in that：The duty cycle of the IDT electrode is in the range of 0.3 ~ 0.8.
10. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 9 designs,
It is characterized in that：The electrode finger logarithm of the IDT is more than 50.
11. the resonator structure for high-performance SAW filter as described in any one in claim 1 ~ 10 is set
Meter, it is characterised in that：The electrode finger logarithm of the reflecting grating is more than 30.
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|---|---|---|---|---|
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN112468109A (en) * | 2020-11-17 | 2021-03-09 | 上海师范大学 | Heterogeneous layered piezoelectric substrate suitable for high-frequency and broadband surface acoustic wave device |
| CN112600531A (en) * | 2020-12-18 | 2021-04-02 | 广东广纳芯科技有限公司 | Narrow-band filter with high-frequency near-zero frequency temperature coefficient and manufacturing method |
| CN112653415A (en) * | 2020-12-25 | 2021-04-13 | 广东广纳芯科技有限公司 | Multilayer film surface acoustic wave resonator and manufacturing method thereof |
| CN112673570A (en) * | 2018-09-07 | 2021-04-16 | 株式会社村田制作所 | Elastic wave device, elastic wave filter, and composite filter device |
| CN112737537A (en) * | 2020-12-25 | 2021-04-30 | 广东广纳芯科技有限公司 | Double-layer POI structure surface acoustic wave resonator and manufacturing method thereof |
| CN112787620A (en) * | 2021-01-13 | 2021-05-11 | 广东广纳芯科技有限公司 | Surface acoustic wave resonator with multilayer film structure and manufacturing method |
| CN112953436A (en) * | 2021-02-08 | 2021-06-11 | 上海师范大学 | SAW-BAW hybrid resonator |
| WO2022194060A1 (en) * | 2021-03-15 | 2022-09-22 | 偲百创(深圳)科技有限公司 | Acoustic resonator in thickness direction excited shear mode |
| CN117118388A (en) * | 2023-08-21 | 2023-11-24 | 天通瑞宏科技有限公司 | Multilayer composite wafer and thin film elastic wave device |
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| CN112600531A (en) * | 2020-12-18 | 2021-04-02 | 广东广纳芯科技有限公司 | Narrow-band filter with high-frequency near-zero frequency temperature coefficient and manufacturing method |
| CN112653415A (en) * | 2020-12-25 | 2021-04-13 | 广东广纳芯科技有限公司 | Multilayer film surface acoustic wave resonator and manufacturing method thereof |
| CN112737537A (en) * | 2020-12-25 | 2021-04-30 | 广东广纳芯科技有限公司 | Double-layer POI structure surface acoustic wave resonator and manufacturing method thereof |
| CN112787620A (en) * | 2021-01-13 | 2021-05-11 | 广东广纳芯科技有限公司 | Surface acoustic wave resonator with multilayer film structure and manufacturing method |
| CN112953436A (en) * | 2021-02-08 | 2021-06-11 | 上海师范大学 | SAW-BAW hybrid resonator |
| CN112953436B (en) * | 2021-02-08 | 2024-04-30 | 上海师范大学 | SAW-BAW hybrid resonator |
| WO2022194060A1 (en) * | 2021-03-15 | 2022-09-22 | 偲百创(深圳)科技有限公司 | Acoustic resonator in thickness direction excited shear mode |
| CN117118388A (en) * | 2023-08-21 | 2023-11-24 | 天通瑞宏科技有限公司 | Multilayer composite wafer and thin film elastic wave device |
| CN117118388B (en) * | 2023-08-21 | 2024-04-16 | 天通瑞宏科技有限公司 | Multilayer composite wafer and thin film elastic wave device |
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Address after: 314499 Building 1 (East), No. 306, Gushui Road, Haichang street, Haining City, Jiaxing City, Zhejiang Province Applicant after: TIANTONG RUIHONG TECHNOLOGY Co.,Ltd. Address before: 314400 Pioneer Building, No. 5, 128 Shuanglian Road, Haining Economic Development Zone, Jiaxing City, Zhejiang Province, 4th Floor Applicant before: HAINING RUIHONG TECHNOLOGY Co.,Ltd. |
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Application publication date: 20180515 |