CN112786785A - Ultrathin one-dimensional organic single crystal array film and preparation method and application thereof - Google Patents
Ultrathin one-dimensional organic single crystal array film and preparation method and application thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 18
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 13
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 claims description 6
- JINUCGGYXBOOGT-UHFFFAOYSA-N 2,6-bis(4-hexylphenyl)anthracene Chemical compound CCCCCCc1ccc(cc1)-c1ccc2cc3cc(ccc3cc2c1)-c1ccc(CCCCCC)cc1 JINUCGGYXBOOGT-UHFFFAOYSA-N 0.000 claims description 5
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical group C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 claims description 5
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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Abstract
The invention discloses an ultrathin one-dimensional organic single crystal array film and a preparation method and application thereof, wherein the preparation method comprises the following steps: (1) dripping a first organic semiconductor solution on a substrate; (2) taking another silicon oxide wafer with a silicon column etched on the surface, covering the surface etched with the silicon column on the first organic semiconductor solution, and heating at 50-120 ℃; (3) dropping the second organic semiconductor solution to cover the substrate, and heating at 50-120 deg.C. The ultrathin one-dimensional organic single crystal array film obtained by the preparation method provided by the invention has the advantages of thin thickness and good orientation degree, and is beneficial to industrial large-scale production and application.
Description
Technical Field
The invention relates to the field of organic semiconductor material preparation, and mainly relates to an ultrathin one-dimensional organic single crystal array film, and a preparation method and application thereof.
Background
The one-dimensional ultrathin organic semiconductor crystal array effectively combines the advantages of long-range order of molecular arrangement, no crystal boundary, consistent pi-pi action direction and long axis direction, easy integration, good flexibility of ultrathin materials and high transparency of the one-dimensional organic single crystal array, is the best choice for researching the relationship between the structure and the performance of the materials, revealing the intrinsic performance of the organic semiconductor material, exploring the carrier transmission mode and preparing high-performance photoelectric devices, and receives more and more attention from people.
At present, the method for preparing the one-dimensional organic single crystal array film mainly comprises a solution method and a physical vapor deposition method. The physical vapor deposition method needs conditions such as high temperature and high pressure, and has the problems of high preparation cost, small film forming area, inadaptation to large-area roll-to-roll industrial production and the like. In the solution method, the solution is easily interfered by external factors in the nucleation and growth processes, so that the obtained material has the problems of thick thickness, poor orientation degree and the like, and is not beneficial to industrial large-scale application.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide an ultrathin one-dimensional organic single crystal array film, a preparation method and application thereof, and aims to solve the problems of thicker thickness and poorer orientation degree of the one-dimensional organic single crystal array film prepared by the existing solvent method.
The technical scheme of the invention is as follows:
a preparation method of an ultrathin one-dimensional organic single crystal array film comprises the following steps:
(1) dripping a first organic semiconductor solution on a substrate;
(2) taking another silicon oxide wafer with a silicon column etched on the surface, covering the surface etched with the silicon column on the first organic semiconductor solution, and heating at 50-120 ℃;
(3) dropping the second organic semiconductor solution to cover the substrate, and heating at 50-120 deg.C.
The preparation method of the ultrathin one-dimensional organic single crystal array film comprises the following steps of (1) preparing a first organic semiconductor solution, wherein a solute of the first organic semiconductor solution is an organic semiconductor, and a solvent is an organic volatile solvent; the solute and solvent of the second organic semiconductor solution are the same as the first organic semiconductor solution.
The preparation method of the ultrathin one-dimensional organic single crystal array film comprises the step of preparing an organic semiconductor, wherein the organic semiconductor is TIPS-pentacene, C10-BTBT or C6-DPA.
The preparation method of the ultrathin one-dimensional organic single crystal array film comprises the step of preparing a film by using a solvent, wherein the solvent is toluene, chlorobenzene or o-dichlorobenzene.
The preparation method of the ultrathin one-dimensional organic single crystal array film comprises the following steps of (1) preparing a first organic semiconductor solution, wherein the concentration range of the first organic semiconductor solution is 1-5 mg/mL; the concentration range of the second organic semiconductor solution is 0.1-0.3 mg/mL.
The preparation method of the ultrathin one-dimensional organic single crystal array film comprises the following steps of (1) heating for 6-7 hours in the step (2) and heating for 6-7 hours in the step (3).
An ultrathin one-dimensional organic single crystal array film is prepared by the preparation method of the ultrathin one-dimensional organic single crystal array film.
The ultrathin one-dimensional organic single crystal array film is characterized in that the thickness of the ultrathin one-dimensional organic single crystal array film is 1.6-20 nm.
The application of the ultrathin one-dimensional organic single crystal array film is to prepare a field effect transistor device.
The application of the ultrathin one-dimensional organic single crystal array film is characterized in that the field effect transistor device sequentially comprises a substrate, the ultrathin one-dimensional organic single crystal array film and an Au electrode from bottom to top.
Has the advantages that: the film obtained by the preparation method of the ultrathin one-dimensional organic single crystal array film has the advantages of thin thickness and good orientation degree, and is beneficial to industrial large-scale production and application.
Drawings
FIG. 1 is a photo photograph of an ultrathin one-dimensional organic single crystal array film obtained in example 1 of the present invention.
FIG. 2 is a TEM image of the ultrathin one-dimensional organic single crystal array film obtained in example 1.
FIG. 3 is a single crystal diffraction spot plot of the scan at A shown in FIG. 2.
FIG. 4 is a single crystal diffraction spot plot of the scan at B shown in FIG. 2.
FIG. 5 is a single crystal diffraction spot plot of the scan at C shown in FIG. 2.
FIG. 6 is an atomic force microscope photograph of the ultra-thin one-dimensional organic single crystal array film obtained in example 1.
FIG. 7 is an out-of-plane XRD diffraction pattern of the ultrathin one-dimensional organic single crystal array film obtained in example 1.
FIG. 8 is a photograph showing an optical photograph of the ultrathin one-dimensional organic single crystal array film obtained in example 2.
FIG. 9 is an atomic force microscope photograph of the ultra-thin one-dimensional organic single crystal array film obtained in example 2.
FIG. 10 is a photograph showing an optical photograph of the ultrathin one-dimensional organic single crystal array film obtained in example 3.
FIG. 11 is an atomic force microscope photograph showing the ultrathin one-dimensional organic single crystal array film obtained in example 3.
Fig. 12 is a schematic structural view of the application of the ultra-thin one-dimensional organic single crystal array thin film of example 1 to a field effect transistor device.
Fig. 13 is a graph of transfer characteristics of a field effect transistor device at a drain voltage of-60V.
Fig. 14 is a graph of output characteristics of a field effect transistor device at different gate voltages.
Detailed Description
The invention provides an ultrathin one-dimensional organic single crystal array film and a preparation method and application thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
The invention provides a preparation method of an ultrathin one-dimensional organic single crystal array film, which comprises the following steps:
(1) dripping a first organic semiconductor solution on a substrate;
wherein the substrate is a silicon oxide wafer.
The solute of the first organic semiconductor solution is an organic semiconductor, and the solvent is an organic volatile solvent; the organic semiconductor may be TIPS-pentacene, C10-BTBT or C6-DPA; the volatile organic solvent may be toluene, chlorobenzene or o-dichlorobenzene. The concentration range of the first organic semiconductor solution can be 1-5 mg/mL.
The dropping amount of the first organic semiconductor solution can be controlled according to requirements, and 10 to 25 mu L of the first organic semiconductor solution can be dropped on a substrate with the thickness of 1.5 x 1.5 mm.
(2) And taking another silicon oxide wafer with the surface etched with the silicon column, covering one surface etched with the silicon column on the first organic semiconductor solution, and placing the silicon oxide wafer in a baking oven at 50-120 ℃ for heating for 6-7 hours to form the organic semiconductor single crystal.
In the step, due to the introduction of the silicon columns, the infiltration removing process can be effectively controlled, and the organic semiconductor single crystal with high orientation degree is obtained.
(3) And dropwise adding a second organic semiconductor solution, covering the substrate with the second organic semiconductor solution, and placing the substrate in an oven at the temperature of 50-120 ℃ for heating for 6-7 hours.
The second organic semiconductor solution is dripped at the edge of the silicon oxide wafer, and because the gap between the silicon oxide wafer and the substrate is small, the second organic semiconductor solution dripped at the edge of the silicon oxide wafer is absorbed between the silicon oxide wafer and the substrate due to capillary action and covers the substrate, namely the surface of the organic semiconductor single crystal. In the step, due to the epitaxial effect, an ultrathin material grows on the surface of the prepared crystal, and the ultrathin one-dimensional organic single crystal array film is obtained.
The second organic semiconductor solution has the same components as the first organic semiconductor solution, but has a different concentration, and the concentration of the second organic semiconductor solution may be in a range of 0.1 to 0.3 mg/mL.
The dropping amount of the second organic semiconductor solution can be controlled according to requirements, and 10 to 20 mu L of the second organic semiconductor solution can be dropped on a substrate with the thickness of 1.5 x 1.5 mm.
Compared with the prior art, the preparation method of the ultrathin one-dimensional organic single crystal array film provided by the invention has the following advantages:
1. because the infiltration removing process is effectively controlled, a one-dimensional organic single crystal array with high orientation degree can be obtained;
2. due to the effect of epitaxy, the obtained large-area one-dimensional organic single crystal array can reach the thickness of a single molecule, and the area can reach 1 x 1 mm.
The invention also provides an ultrathin one-dimensional organic single crystal array film, which is prepared by adopting the preparation method of the ultrathin one-dimensional organic single crystal array film. The thickness of the ultrathin one-dimensional organic single crystal array film is 1.6-20 nm, the thickness is thin, and the orientation degree is high.
The invention also provides application of the ultrathin one-dimensional organic single crystal array film, and the ultrathin one-dimensional organic single crystal array film is used for preparing a field effect transistor device. The field effect transistor device sequentially comprises a substrate, the ultrathin one-dimensional organic single crystal array film and an Au electrode from bottom to top.
The present invention is further illustrated by the following specific examples.
Examples
The apparatus referred to in the following examples is as follows:
polarizing microscope (POM) Nikon ECLIPSE Ci-POL polarizing optical microscope;
electrical property curve test instrument: keithley 4200-SCS machine quasi-probe station;
thickness test (AFM atomic force microscope): bruker Dimension Icon atomic force microscope.
The drug purchase sources referred to in the following examples are as follows:
TIPS-pentacene：Sigma-Aldrich；
C10-BTBT: Sigma-Aldrich；
C6-DPA, Taiwan Lumtec.
The method for preparing the ultra-thin one-dimensional organic single crystal array thin film of examples 1 to 3 includes the steps of:
dripping a first organic semiconductor solution with the concentration of C1 on a silicon oxide substrate;
taking another silicon oxide wafer with the surface etched with the silicon column, covering one surface etched with the silicon column on the first organic semiconductor solution, and placing the silicon oxide wafer in an oven with the temperature of T1 to heat for H1 hours; due to the introduction of the silicon column, the infiltration removing process of the liquid is effectively controlled, and a one-dimensional single crystal array with high orientation degree is obtained;
a second organic semiconductor solution with the concentration of C2 is dripped on the edge of the silicon oxide wafer, the second organic semiconductor solution is absorbed between the silicon oxide wafer and the substrate, the second organic semiconductor solution covers the one-dimensional single crystal array, and the silicon oxide wafer is placed in an oven with the temperature of T1 to be heated for H2 hours. Due to the epitaxial effect, the organic semiconductor solution is introduced into the prepared crystal again, and the growth of the ultrathin organic single crystal is realized.
Wherein the solutes, C1, T1, H1, C2, T2, and H2 of the first and second organic semiconductor solutions are detailed in table 1.
TABLE 1
| Examples | Solute of organic semiconductor solution | Solvent(s) | C1 (mg/mL) | T1 (℃) | H1 (h) | C2 (mg/mL) | T2 (℃) | H2 (h) | |
| 1 | TIPS- | Toluene | 3 | 60 | 6 | 0.2 | 60 | 6 | |
| 2 | C10- | Toluene | 5 | 70 | 7 | 0.2 | 70 | 7 | |
| 3 | C6- | Chlorobenzene | 1 | 80 | 6 | 0.1 | 80 | 6 |
The optical photograph of the ultrathin one-dimensional organic single crystal array film obtained in example 1 is shown in FIG. 1, and the transmission electron microscope is shown in FIG. 2. Fig. 3-5 are single crystal diffraction spot maps scanned at A, B, C in fig. 2. As can be seen from fig. 3, 4 and 5, the diffraction spots are very clear, and thus it can be demonstrated that the organic single crystal array thin film has single crystal characteristics, and the diffraction spots at different positions are clear and consistent, demonstrating that the organic single crystal array thin film has good uniformity over a large area. FIG. 6 is an atomic force microscope photograph showing the ultra-thin one-dimensional organic single crystal array thin film obtained in example 1, and it is found from the analysis of the drawing that the thickness of the single crystal is 1.6 nm, corresponding to the thickness of the monolayer, and the ultra-thin property is demonstrated. FIG. 7 is an out-of-plane XRD diffraction pattern of the ultrathin one-dimensional organic single crystal array thin film obtained in example 1, and it can be seen from FIG. 7 that the peak intensity of (001) is very high, indicating that the out-of-plane stacking is highly ordered.
The optical photograph and atomic force microscope images of the ultrathin one-dimensional organic single crystal array film obtained in example 2 are shown in fig. 8 and fig. 9, and the analysis in fig. 9 shows that the thickness of the single crystal is 3.3 nm, which corresponds to the thickness of the monolayer, and the ultrathin property of the ultrathin one-dimensional organic single crystal array film is proved.
The optical photograph and atomic force microscope images of the ultrathin one-dimensional organic single crystal array film obtained in example 3 are shown in fig. 10 and 11, and the analysis in fig. 11 shows that the thickness of the single crystal is 1.6 nm, which corresponds to the thickness of the monolayer, and the ultrathin property of the ultrathin one-dimensional organic single crystal array film is proved.
The ultrathin one-dimensional organic single-crystal array thin film obtained in example 1 was used for producing a field effect transistor device, the structure of which is shown in fig. 12, and the field effect transistor device includes a substrate 1, an ultrathin one-dimensional organic single-crystal array thin film formed on the substrate, and two Au electrodes 3.
FIG. 13 is a graph of the transfer characteristics of the FET device at a drain voltage of-60V, and it can be seen from FIG. 13 that the highest mobility can reach 12.1 cm2v-1 s-1。
Fig. 14 is a graph of output characteristics of the field effect transistor device at different gate voltages, and it can be seen from fig. 14 that at a low source-drain voltage, the current shows a linear relationship with the voltage variation, which proves that the field effect transistor device has a small contact resistance.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A preparation method of an ultrathin one-dimensional organic single crystal array film is characterized by comprising the following steps:
(1) dripping a first organic semiconductor solution on a substrate;
(2) taking another silicon oxide wafer with a silicon column etched on the surface, covering the surface etched with the silicon column on the first organic semiconductor solution, and heating at 50-120 ℃;
(3) dropping the second organic semiconductor solution to cover the substrate, and heating at 50-120 deg.C.
2. The method for preparing an ultrathin one-dimensional organic single crystal array film as claimed in claim 1, wherein the solute of the first organic semiconductor solution is an organic semiconductor, and the solvent is an organic volatile solvent; the solute and solvent of the second organic semiconductor solution are the same as the first organic semiconductor solution.
3. The method for preparing an ultra-thin one-dimensional organic single crystal array film according to claim 2, wherein the organic semiconductor is TIPS-pentacene, C10-BTBT, or C6-DPA.
4. The method for preparing an ultrathin one-dimensional organic single crystal array film as claimed in claim 2, wherein the organic volatile solvent is toluene, chlorobenzene or o-dichlorobenzene.
5. The method for preparing an ultrathin one-dimensional organic single crystal array film as claimed in claim 1, wherein the concentration range of the first organic semiconductor solution is 1 to 5 mg/mL; the concentration range of the second organic semiconductor solution is 0.1-0.3 mg/mL.
6. The method for preparing an ultra-thin one-dimensional organic single crystal array film according to claim 1, wherein the heating time in the step (2) is 6 to 7 hours, and the heating time in the step (3) is 6 to 7 hours.
7. An ultrathin one-dimensional organic single crystal array film, which is characterized by being prepared by the preparation method of the ultrathin one-dimensional organic single crystal array film as claimed in any one of claims 1 to 6.
8. The ultra-thin one-dimensional organic single crystal array film according to claim 8, wherein the thickness of the ultra-thin one-dimensional organic single crystal array film is 1.6 to 20 nm.
9. Use of the ultra-thin one-dimensional organic single crystal array film according to claim 7 for manufacturing a field effect transistor device.
10. The use of the ultra-thin one-dimensional organic single crystal array film according to claim 9, wherein the field effect transistor device comprises a substrate, the ultra-thin one-dimensional organic single crystal array film and an Au electrode in sequence from bottom to top.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030015714A1 (en) * | 2001-07-23 | 2003-01-23 | Motorola, Inc. | Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including surface treatment of an oxide layer |
| JP2006186346A (en) * | 2004-12-03 | 2006-07-13 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US20170179231A1 (en) * | 2014-07-22 | 2017-06-22 | Flexenable Limited | Protecting transistor elements against degrading species |
| CN109698275A (en) * | 2017-10-23 | 2019-04-30 | 北京赛特超润界面科技有限公司 | A kind of preparation method of small organic molecule crystal pattern array |
| CN111416041A (en) * | 2019-01-04 | 2020-07-14 | 天津大学 | Method for preparing large-area organic semiconductor array from top to bottom |
-
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- 2021-01-11 CN CN202110030859.7A patent/CN112786785B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030015714A1 (en) * | 2001-07-23 | 2003-01-23 | Motorola, Inc. | Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including surface treatment of an oxide layer |
| JP2006186346A (en) * | 2004-12-03 | 2006-07-13 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US20170179231A1 (en) * | 2014-07-22 | 2017-06-22 | Flexenable Limited | Protecting transistor elements against degrading species |
| CN109698275A (en) * | 2017-10-23 | 2019-04-30 | 北京赛特超润界面科技有限公司 | A kind of preparation method of small organic molecule crystal pattern array |
| CN111416041A (en) * | 2019-01-04 | 2020-07-14 | 天津大学 | Method for preparing large-area organic semiconductor array from top to bottom |
Non-Patent Citations (3)
| Title |
|---|
| HANFEI GAO 等: ""Capillary-Bridge Mediated Assembly of Conjugated Polymer Arrays toward Organic Photodetectors"", 《ADV. FUNCT. MATER.》 * |
| YUCHEN WU 等: ""3D Dewetting for Crystal Patterning: Toward Regular Single-Crystalline Belt Arrays and Their Functionality"", 《ADVANCED MATERIALS》 * |
| 姚奕帆 等: "有机半导体薄膜的有序化及其器件应用", 《科学通报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113981541A (en) * | 2021-12-27 | 2022-01-28 | 天津大学 | Method and device for growing organic semiconductor single crystal |
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