CN112786445A - 一种芯片研磨方法 - Google Patents

一种芯片研磨方法 Download PDF

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CN112786445A
CN112786445A CN202011566126.7A CN202011566126A CN112786445A CN 112786445 A CN112786445 A CN 112786445A CN 202011566126 A CN202011566126 A CN 202011566126A CN 112786445 A CN112786445 A CN 112786445A
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左振宏
赵一诚
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Abstract

本发明公开了一种芯片研磨方法，包括以下步骤：(1)、首先采用固定夹具对目标芯片进行固定；(2)、采用干法刻蚀对目标芯片的氧化层进行刻蚀；(3)、接着采用离子束刻蚀机对目标芯片的金属层进行刻蚀及污染层的清理；(4)、最后对目标芯片经刻蚀后的表面进行研磨抛光，使之平整；本发明的有益效果是，通过固定夹具对目标芯片能够起到很好地固定作用，便于后期对目标芯片研磨均匀，采用等离子刻蚀及离子束刻蚀的气体异相性，能够对目标芯片的金属层和氧化层进行可控的去除，便于对芯片更好地进行研磨。

Description

一种芯片研磨方法
技术领域
本发明涉及研磨装置技术领域，特别是一种芯片研磨方法。
背景技术
目前超大芯片去层方法是将所需要分析的部分切割下来，作为小芯片进行去层并进行分析，这种方法已经无法适应市场对完整芯片功能的分析，但是如果直接对超大芯片进行去层分析时，其中超大芯片研磨的问题有两个方面：第一是超大芯片面积较大，研磨时表面不均匀；第二是芯片较大手工研磨无法维持恒定的研磨力度，造成芯片表面不平整。
鉴于上述情况，有必要对现有的研磨方法加以改进，使其能够适应现在对超大芯片研磨的需要。
发明内容
由于目前对于芯片研磨时,对于一些比较大的芯片通常是将需要分析的部分切割下来，然后对其进行去层分析，但是这种分析具有不完整性，若是对超大芯片直接进行去层分析时，研磨时其研磨表面不均匀，并且研磨力度不一样的话，容易造成芯片表面不平整；因此我们在现有技术缺陷的基础上设计了一种芯片研磨方法，能够更好地对超大芯片进行直接研磨工作，并且能够保证对芯片的研磨均匀及研磨力度。
实现上述目的本发明的技术方案为，一种芯片研磨方法，包括以下步骤：
(1)、首先采用固定夹具对目标芯片进行固定；
(2)、采用干法刻蚀对目标芯片的氧化层进行刻蚀；
(3)、接着采用离子束刻蚀机对目标芯片的金属层进行刻蚀及污染层的清理；
(4)、最后对目标芯片经刻蚀后的表面进行研磨抛光，使之平整。
对本技术方案的进一步补充，固定夹具包括夹具框架、安装于夹具框架上的支撑杆、套设于支撑杆上的弹簧、设置于支撑杆下方的底座、设置于底座下方的目标芯片；目标芯片处于研磨的中心位置。
对本技术方案的进一步补充，所述夹具框架呈“口”字形，其下方设有凹槽，底座卡接在凹槽内；所述支撑杆贯穿夹具框架的上下表面且凸出设置于夹具框架的上端，所述支撑杆的下端与底座的上表面固定连接，所述弹簧的一端顶靠在夹具框架的内表面，另一端顶靠在底座的上表面；目标芯片镶嵌在底座的下表面。
对本技术方案的进一步补充，所述底座上位于目标芯片的两端还镶嵌有补偿芯片，该补偿芯片与目标芯片连接，其厚度大于目标芯片的厚度。
对本技术方案的进一步补充，补偿芯片和目标芯片外包覆有一层树脂。
对本技术方案的进一步补充，所述底座的强度大于目标芯片的强度。
对本技术方案的进一步补充，干法刻蚀采用等离子刻蚀。
其有益效果在于，首先通过固定夹具对目标芯片能够起到很好地固定作用，便于后期对目标芯片研磨均匀，采用等离子刻蚀及离子束刻蚀的气体异相性，能够对目标芯片的金属层和氧化层进行可控的去除，便于对芯片更好地进行研磨；目标芯片两侧设有补偿芯片，补偿芯片与目标芯片外侧设有树脂，研磨时会先裸露出补偿芯片，然后继续研磨目标芯片上的树脂逐渐减薄，直至目标芯片表面露出，该过程可以观察目标芯片上树脂变化的情况来判断研磨过程是否均匀，便于人们进行使用。
附图说明
图1是本发明的整体安装结构示意图；
图2是本发明目标芯片工作状态下安装在底座上的结构示意图；
图3是目标芯片与补偿芯片安装在底座上的结构示意图；
图中，1、夹具框架；2、支撑杆；3、弹簧；4、底座；5、目标芯片；6、补偿芯片；7、树脂。
具体实施方式
为了便于本领域技术人员对本技术方案更加清楚，下面将结合附图1-3详细阐述本发明的技术方案：
一种芯片研磨方法，包括以下步骤：
(1)、首先采用固定夹具对目标芯片5进行固定；固定夹具能够对目标芯片5起到一个固定的作用，能够提高对目标芯片5研磨过程中受力均匀性，提高了研磨的平整性。
(2)、采用干法刻蚀对目标芯片5的氧化层进行刻蚀；干法刻蚀氧化层后，能够将目标芯片5的金属层裸露，其上可能会残留一定的刻蚀后的污染物；干法刻蚀采用等离子刻蚀。
(3)、接着采用离子束刻蚀机对目标芯片5的金属层进行刻蚀及污染层的清理；离子束刻蚀机对金属层进行处理时，其上的惰性气体离子与经刻蚀后的目标芯片5表面相撞后发生离子交换，能够对其上的污染物起到清理作用；
(4)、最后对目标芯片5经刻蚀后的表面进行研磨抛光，使之平整，从而达到原有的平整度。
其中，使用干法刻蚀对目标芯片5进行刻蚀，能够保证目标芯片5刻蚀的稳定性，避免了采用化学试剂湿法刻蚀的不易控制。
下面将对固定夹具的结构做详细的阐述，固定夹具包括夹具框架1、安装于夹具框架1上的支撑杆2、设置于支撑杆2下方的底座4、设置于底座4下方的目标芯片5；目标芯片5处于研磨的中心位置，便于研磨机构对目标芯片5进行研磨；其中，所述夹具框架1呈“口”字形，其下方设有凹槽(未标出)，底座4卡接在凹槽内，凹槽的设置对底座4起到限位作用；所述支撑杆2贯穿夹具框架1的上下表面且凸出设置于夹具框架1的上端，所述支撑杆2的下端与底座4的上表面固定连接，支撑杆2对底座4起到支撑限位的作用，首先能够限制底座4的横向移动，进一步地，为了对底座4的固定提供恒定的压力，在支撑杆2上套设了弹簧3，所述弹簧3的一端顶靠在夹具框架1的内表面，另一端顶靠在底座4的上表面；其中弹簧3的型号可以根据目标芯片5的尺寸进行调整，从而便于底座4上的目标芯片5与研磨面均匀的接触；目标芯片5镶嵌在底座4的下表面，底座4的表面光滑，所述底座4的强度大于目标芯片5的强度，从而便于稳定目标芯片5及维持目标芯片5与研磨面之间的水平，使得研磨机构工作时不会对底座4产生影响；所述底座4上位于目标芯片5的两端还镶嵌有补偿芯片6，该补偿芯片6与目标芯片5连接，其厚度大于目标芯片5的厚度，使用两个厚度较厚的补偿芯片6是为了对目标芯片5的研磨起到更好地让位作用，便于后续研磨机构能够均匀平缓的对目标芯片5进行研磨，便于人们进行使用。
补偿芯片6和目标芯片5外包覆有一层树脂7，树脂7的设置主要是为了研磨机构在对目标芯片5进行研磨时起到一定的过渡作用，方便后续对目标芯片5更均匀的进行研磨。
工作原理：首先通过固定夹具对目标芯片5进行固定，然后采用干法刻蚀对目标芯片5的氧化层进行刻蚀，接着用离子束刻蚀机对目标芯片5的金属层进行刻蚀以及污染层的清理，沿着采用研磨机构对目标芯片5进行研磨，其中研磨时研磨面上首先裸露出补偿芯片6，此时目标芯片5上仍有树脂7覆盖；进一步研磨，目标芯片5上的树脂7厚度会逐渐减薄，直至目标芯片5表面露出，此过程可以观察目标芯片5上树脂7变化的情况来判断研磨过程是否均匀。
上述技术方案仅体现了本发明技术方案的优选技术方案，本技术领域的技术人员对其中某些部分所可能做出的一些变动均体现了本发明的原理，属于本发明的保护范围之内。

Claims (7)

1.一种芯片研磨方法，其特征在于，包括以下步骤：
(1)、首先采用固定夹具对目标芯片进行固定；
(2)、采用干法刻蚀对目标芯片的氧化层进行刻蚀；
(3)、接着采用离子束刻蚀机对目标芯片的金属层进行刻蚀及污染层的清理；
(4)、最后对目标芯片经刻蚀后的表面进行研磨抛光，使之平整。
2.根据权利要求1所述的一种芯片研磨方法，其特征在于，固定夹具包括夹具框架、安装于夹具框架上的支撑杆、套设于支撑杆上的弹簧、设置于支撑杆下方的底座、设置于底座下方的目标芯片；目标芯片处于研磨的中心位置。
3.根据权利要求2所述的一种芯片研磨方法，其特征在于，所述夹具框架呈“口”字形，其下方设有凹槽，底座卡接在凹槽内；所述支撑杆贯穿夹具框架的上下表面且凸出设置于夹具框架的上端，所述支撑杆的下端与底座的上表面固定连接，所述弹簧的一端顶靠在夹具框架的内表面，另一端顶靠在底座的上表面；目标芯片镶嵌在底座的下表面。
4.根据权利要求3所述的一种芯片研磨方法，其特征在于，所述底座上位于目标芯片的两端还镶嵌有补偿芯片，该补偿芯片与目标芯片连接，其厚度大于目标芯片的厚度。
5.根据权利要求4所述的一种芯片研磨方法，其特征在于，补偿芯片和目标芯片外包覆有一层树脂。
6.根据权利要求3所述的一种芯片研磨方法，其特征在于，所述底座的强度大于目标芯片的强度。
7.根据权利要求1所述的一种芯片研磨方法，其特征在于，干法刻蚀采用等离子刻蚀。
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CN113702807A (zh) * 2021-08-25 2021-11-26 长鑫存储技术有限公司 芯片载具及芯片检测装置
CN114750018A (zh) * 2022-06-13 2022-07-15 合肥晶合集成电路股份有限公司 一种芯片去层装置及方法
CN116230528A (zh) * 2023-03-24 2023-06-06 胜科纳米(苏州)股份有限公司 一种芯片去层方法

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CN113702807A (zh) * 2021-08-25 2021-11-26 长鑫存储技术有限公司 芯片载具及芯片检测装置
CN114750018A (zh) * 2022-06-13 2022-07-15 合肥晶合集成电路股份有限公司 一种芯片去层装置及方法
CN116230528A (zh) * 2023-03-24 2023-06-06 胜科纳米(苏州)股份有限公司 一种芯片去层方法
CN116230528B (zh) * 2023-03-24 2024-01-09 胜科纳米(苏州)股份有限公司 一种芯片去层方法

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