CN112778014A - High-performance silicon carbide ceramic material and preparation method thereof - Google Patents
High-performance silicon carbide ceramic material and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a high-performance silicon carbide ceramic material and a preparation method thereof, wherein the preparation method comprises the following steps: the preparation method comprises the steps of preparing raw materials, ball-milling and mixing, spraying and granulating, pressing and molding, and sintering, wherein the alpha-silicon carbide powder and the beta-silicon carbide powder in the raw materials are added and proportioned, so that the grain boundary strengthening and grain refining are facilitated, and the toughness and hardness of the silicon carbide ceramic are improved. The proper composition of the sintering aid can enlarge the sintering temperature range and bring convenience to process control; the sintering aid is B4C. C and AlN, when B4C. The mass ratio of C to AlN is (1-2): (1.5-3): (1-3), the sintering aid can improve the interface bonding strength between silicon carbide crystal grains and promote the improvement of the high-temperature strength. When the sintering temperature is 2050 ℃, the sintering density of the silicon carbide ceramic material is higher. The prepared silicon carbide ceramic material has excellent room temperature and high temperature mechanical properties.
Description
Technical Field
The invention relates to a silicon carbide ceramic material, in particular to a high-performance silicon carbide ceramic material and a preparation method thereof.
Background
With the development of science and technology, people have higher requirements on the research of new materials. In the field of engineering materials, not only are good mechanical properties required, but also excellent physicochemical properties, such as density, corrosion resistance, high temperature resistance, heat transfer property, etc., are required. And the structural ceramic material can meet the requirements of various properties.
Silicon carbide ceramics are an important member of structural ceramics, have excellent properties such as high-temperature strength, high hardness, high-temperature resistance, corrosion resistance and the like, and can be used in many aspects such as bearings, rotors, vehicles, shipbuilding and the like. The preparation method of the silicon carbide ceramic mainly comprises reaction sintering, hot-pressing sintering, pressureless sintering and the like. The reaction sintering has strict requirements on raw materials, is easy to generate free silicon, and has high energy consumption and poor high-temperature performance. The hot-pressing sintering has strict requirements on the production process, is difficult to prepare parts with complex shapes, and has high production cost. The pressureless sintering preparation cost is low, the prepared silicon carbide ceramic has good overall performance, parts with complex shapes can be prepared, and the industrialized production is easy to realize. However, the silicon carbide ceramic prepared by pressureless sintering still has the problems of lower toughness, low density, strength and hardness which need to be further improved, and the like. At present, in order to prepare a compact silicon carbide ceramic with excellent performance, patent document 1(CN104446493A) adopts two-step pressureless solid-phase sintering to prepare the silicon carbide ceramic, but the preparation process is complex and the toughness is not high.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a high-performance silicon carbide ceramic material and a preparation method thereof, and the prepared silicon carbide ceramic material has good mechanical properties at room temperature and high temperature.
In order to achieve the purpose, the invention adopts the following technical scheme: the preparation method of the high-performance silicon carbide ceramic material is characterized by comprising the following steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75-90%, the content of the sintering aid is 5-20%, and the content of the binder is 5-15%; the sum of the mass percentages of the components in the raw materials is 100 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 60-70 percent, and the balance is beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20-200nm, and the average grain diameter of the beta-silicon carbide powder is 30-230 nm; the sintering aid is composed of B4C. C and AlN; b in the sintering aid4C. The mass ratio of C to AlN is (1-2): (1.5-3): (1-3); the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein when spray drying is carried out, the hot air temperature at the inlet of the dryer is 330-360 ℃, and the temperature at the outlet of the dryer is 100-120 ℃; after granulation, the bulk density of the obtained powder is 0.93-0.97g/cm3；
(4) And (3) pressing and forming: carrying out compression molding or cold isostatic pressing on the powder to obtain a blank; the pressure for compression molding is 120-150 MPa; the pressure of the cold isostatic pressing is 200-240 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3-5 ℃/min; then the heating rate is 6-8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010-2100 ℃; the sintering time is 30-60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Preferably, the content of the silicon carbide powder is 80% by mass of the raw material.
Preferably, the mass percentage of the α -silicon carbide powder is 66% based on the total amount of the silicon carbide powder.
Preferably, the content of the sintering aid is 8% by mass of the raw materials.
Preferably, B in the sintering aid4C. The mass ratio of C to AlN is 1: 2: 2.
preferably, the dryer inlet hot air temperature is 340 ℃ and the outlet temperature is 115 ℃.
Preferably, the sintering temperature is 2050 ℃.
Preferably, the sintering time is 40 min.
The invention also provides a high-performance silicon carbide ceramic material prepared by the preparation method.
The addition proportion of the alpha-silicon carbide powder and the beta-silicon carbide powder is beneficial to strengthening of crystal boundary and grain refinement, thereby improving the toughness and hardness of the silicon carbide ceramic. When the addition amount of the alpha-silicon carbide powder is 66%, the toughness and the hardness of the alpha-silicon carbide powder are optimal. During the sintering process, when the beta-silicon carbide is converted into the alpha-silicon carbide, the combination among crystal grains is more close, and the sintering density of the silicon carbide ceramic is improved.
The proper composition of the sintering aid can enlarge the sintering temperature range and bring convenience to process control; the sintering aid is B4C. C and AlN, when B4C. Mass of C and AlNThe proportion is (1-2): (1.5-3): (1-3), the sintering aid can better improve the interface bonding strength among silicon carbide crystal grains and promote the improvement of high-temperature strength; when B is present4C. The mass ratio of C to AlN is 1: 2: 2, the overall performance is best.
The sintering temperature is 2010-2100 ℃, the sintering density of the silicon carbide ceramic material is increased and then decreased along with the increase of the sintering temperature, and when the sintering temperature is 2050 ℃, the sintering density of the silicon carbide ceramic material is higher.
Tests show that the bending strength of the silicon carbide ceramic material is between 760 and 850MPa and the fracture toughness is between 10.5 and 13.3 MPa.m at room temperature1/2The sintered density is 3.17-3.20g/cm3The Vickers hardness is between 30.5 and 34.0 GPa. The bending strength of the silicon carbide ceramic material at the high temperature of 1400 ℃ is as follows: between 630 and 690 MPa. The silicon carbide ceramic material obtained by the preparation method has excellent strength and toughness, hardness, high sintering density and good high-temperature strength performance.
The invention has the beneficial effects that:
1. according to the preparation method of the high-performance silicon carbide ceramic material, provided by the invention, the silicon carbide powder, the sintering aid and the binder are subjected to ball milling and mixing according to the proportion, and the proper proportion of the alpha-silicon carbide powder and the beta-silicon carbide powder is selected, so that the improvement of the sintering density of the silicon carbide ceramic is promoted, and the toughness and the hardness of the silicon carbide ceramic are also improved.
2. The sintering aid composition provided by the invention can expand the sintering temperature range and bring convenience to process control; the sintering aid is B4C. C and AlN, when B4C. The mass ratio of C to AlN is (1-2): (1.5-3): (1-3), the sintering aid can improve the interface bonding strength between silicon carbide crystal grains and promote the improvement of the high-temperature strength. When B is present4C. The mass ratio of C to AlN is 1: 2: 2, the overall performance is best.
3. And selecting the optimal sintering temperature, wherein the sintering density of the silicon carbide ceramic material is higher when the sintering temperature is 2050 ℃. Tests show that the silicon carbide ceramic material prepared by the preparation method has excellent mechanical properties at room temperature and high temperature.
Detailed Description
The present invention will be described in further detail with reference to the following examples. The specific embodiments are to be considered as illustrative and not restrictive in character.
Embodiment 1, a method for preparing a high-performance silicon carbide ceramic material, comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75 percent, the content of the sintering aid is 20 percent, and the content of the binder is 5 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 60 percent, and the balance is the beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 3; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Embodiment 2, a method for preparing a high-performance silicon carbide ceramic material, comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 90%, the content of the sintering aid is 5%, and the content of the binder is 5%; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 70 percent, and the balance is the beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 200nm, and the average grain diameter of the beta-silicon carbide powder is 30 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 1; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein when spray drying is carried out, the hot air temperature at the inlet of a dryer is 360 ℃, and the outlet temperature is 100 ℃; after granulation, the bulk density of the obtained powder was 0.97g/cm3；
(4) And (3) pressing and forming: carrying out cold isostatic pressing on the powder to obtain a blank; the pressure of cold isostatic pressing is 240 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 5 ℃/min; then the heating rate is 6 ℃/min until the sintering temperature is reached; the sintering temperature is 2100 ℃; the sintering time is 30 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Embodiment 3, a method for preparing a high-performance silicon carbide ceramic material, comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75 percent, the content of the sintering aid is 20 percent, and the content of the binder is 5 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, the mass percent of the alpha-silicon carbide powder is 66 percent based on the total weight of the silicon carbide powder, and the rest isIs beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 3; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Embodiment 4, a method for preparing a high-performance silicon carbide ceramic material, comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75 percent, the content of the sintering aid is 20 percent, and the content of the binder is 5 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 66 percent, and the balance is the beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 2; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Embodiment 5, a method for preparing a high-performance silicon carbide ceramic material, comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75 percent, the content of the sintering aid is 20 percent, and the content of the binder is 5 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 66 percent, and the balance is the beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 2; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2050 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Comparative example 1, a method for preparing a high-performance silicon carbide ceramic material, characterized by comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75 percent, the content of the sintering aid is 20 percent, and the content of the binder is 5 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 60 percent, and the balance is the beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is B4C; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Comparative example 2, a method for preparing a high-performance silicon carbide ceramic material, characterized by comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75 percent, the content of the sintering aid is 20 percent, and the content of the binder is 5 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 60 percent, and the balance is the beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 5; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
Comparative example 3, a method for preparing a high-performance silicon carbide ceramic material, characterized by comprising the steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 65%, the content of the sintering aid is 15%, and the content of the binder is 20%; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 80 percent, and the balance is the beta-silicon carbide powder; alpha-The average grain diameter of the silicon carbide powder is 20nm, and the average grain diameter of the beta-silicon carbide powder is 230 nm; the sintering aid is composed of B4C. C and AlN; b is4C. The mass ratio of C to AlN is 1: 2: 3; the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein during spray drying, the hot air temperature at the inlet of a dryer is 330 ℃, and the outlet temperature is 120 ℃; after granulation, the bulk density of the obtained powder was 0.93g/cm3；
(4) And (3) pressing and forming: carrying out compression molding on the powder to obtain a blank; the pressure for compression molding is 120 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3 ℃/min; then the heating rate is 8 ℃/min until the sintering temperature is reached; the sintering temperature is 2300 ℃; the sintering time is 60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
The invention performs a performance test on the finished products of examples 1-5 and comparative examples 1-3, and the test results are shown in Table 1.
TABLE 1 test Properties of silicon carbide ceramic materials
From table 1, it can be seen that: the addition proportion of the alpha-silicon carbide powder and the beta-silicon carbide powder is favorable for improving the toughness and the hardness of the silicon carbide ceramic, and the sintering density is also improved. When the addition amount of the alpha-silicon carbide powder is 66%, the toughness and the hardness of the alpha-silicon carbide powder are optimal. The proper composition of the sintering aid can enlarge the sintering temperature range and bring convenience to process control; the interface bonding strength among silicon carbide crystal grains can be better improved by determining the proper proportion of the sintering aid, and the improvement of the high-temperature strength is promoted. When the sintering temperature is 2050 ℃, the sintering density of the silicon carbide ceramic material is higher.
The silicon carbide ceramic material prepared by the invention has the bending strength of 760-850MPa and the fracture toughness of 10.5-13.3 MPa-m at room temperature1/2The sintered density is 3.17-3.20g/cm3The Vickers hardness is between 30.5 and 34.0 GPa. The bending strength of the silicon carbide ceramic material at the high temperature of 1400 ℃ is as follows: between 630 and 690MPa, excellent room temperature and high temperature mechanical properties.
The foregoing examples are set forth to illustrate the present invention more clearly and should not be construed as limiting the scope of the present invention, which is intended to be limited thereby, and all such changes and modifications that can be made without departing from the scope of the present invention are intended to be within the scope of the present invention.
Claims (9)
1. The preparation method of the high-performance silicon carbide ceramic material is characterized by comprising the following steps of:
(1) preparing raw materials: according to the mass percentage, in the raw materials, the content of the silicon carbide powder is 75-90%, the content of the sintering aid is 5-20%, and the content of the binder is 5-15%; the sum of the mass percentages of the components in the raw materials is 100 percent; in the silicon carbide powder, the silicon carbide powder consists of alpha-silicon carbide powder and beta-silicon carbide powder, wherein the mass percent of the alpha-silicon carbide powder is 60-70 percent, and the balance is beta-silicon carbide powder; the average grain diameter of the alpha-silicon carbide powder is 20-200nm, and the average grain diameter of the beta-silicon carbide powder is 30-230 nm; the sintering aid is composed of B4C. C and AlN; b in the sintering aid4C. The mass ratio of C to AlN is (1-2): (1.5-3): (1-3); the binder is phenolic resin;
(2) ball milling and mixing: ball-milling and mixing the silicon carbide powder, the sintering aid and the binder according to the proportion to obtain a mixed material;
(3) spray granulation: carrying out spray granulation on the mixed material, wherein when spray drying is carried out, the hot air temperature at the inlet of the dryer is 330-360 ℃, and the temperature at the outlet of the dryer is 100-120 ℃; after granulation, the bulk density of the obtained powder is 0.93-0.97g/cm3；
(4) And (3) pressing and forming: carrying out compression molding or cold isostatic pressing on the powder to obtain a blank; the pressure for compression molding is 120-150 MPa; the pressure of the cold isostatic pressing is 200-240 MPa;
(5) and (3) sintering: and under the protection of inert gas, putting the blank into a sintering furnace for sintering, wherein in the sintering process, the relationship between the temperature rise and the time is as follows: the temperature is between room temperature and 1000 ℃, and the heating rate is 3-5 ℃/min; then the heating rate is 6-8 ℃/min until the sintering temperature is reached; the sintering temperature is 2010-2100 ℃; the sintering time is 30-60 min; and then cooling to room temperature along with the furnace to obtain the silicon carbide ceramic material.
2. The method for preparing a high-performance silicon carbide ceramic material according to claim 1, wherein the content of the silicon carbide powder is 80% by mass of the raw material.
3. The method for preparing a high-performance silicon carbide ceramic material according to claim 1 or 2, wherein the α -silicon carbide powder is 66% by mass based on the total amount of the silicon carbide powder.
4. The method for preparing a high-performance silicon carbide ceramic material according to claim 1 or 2, wherein the content of the sintering aid is 8% by mass of the raw materials.
5. The method for preparing high-performance silicon carbide ceramic material according to claim 2 after 1, wherein B is the sintering aid4C. The mass ratio of C to AlN is 1: 2: 2.
6. the method for preparing high-performance silicon carbide ceramic material according to claim 1 or 2, wherein the temperature of hot air at the inlet of the dryer is 340 ℃ and the temperature at the outlet of the dryer is 115 ℃.
7. The process for the preparation of high performance silicon carbide ceramic material according to any of claims 1-6, wherein the sintering temperature is 2050 ℃.
8. The method for preparing a high performance silicon carbide ceramic material according to any one of claims 1 to 7, wherein the sintering time is 40 min.
9. A high-performance silicon carbide ceramic material, which is prepared by the method for preparing the high-performance silicon carbide ceramic material according to any one of claims 1 to 8.
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