CN101591169A - A kind of silicon carbide carbonized complex phase ceramic sealing material and preparation method thereof - Google Patents
A kind of silicon carbide carbonized complex phase ceramic sealing material and preparation method thereof Download PDFInfo
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Abstract
A kind of silicon carbide carbonized complex phase ceramic sealing material, each composition weight proportioning is: 100 parts of silicon carbide powders, 0.1 part～1 part of norbide, 5 parts～30 parts of carbon dusts, binding agent PVA0.5 part～3 parts, 0.5 part～1.5 parts of dispersion agents.The preparation method may further comprise the steps successively: (1) after the proportioning joins raw material in the deionized water by a certain percentage, mixes through ball milling, and being mixed with the solid phase weight content is 40%～60% water base silicon carbide compound slurry; (2) adopt atomizing granulating technology that slip is carried out spraying drying, obtain silicon carbide granulating powder; (3) the grain powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate; (4) base substrate is placed in the vacuum non-pressure sintering furnace, is warming up to 2000 ℃～2100 ℃, be incubated 1 hour～1.5 hours, sintering obtains silicon carbide carbonized complex phase ceramic sealing material.
Description
Technical field
The present invention relates to a kind of silicon carbide carbonized (SiC/C) complex phase ceramic sealing material and preparation method thereof.
Background technology
For particular requirements such as the zero leakage of satisfying mechanical seal, low abrasion loss, long lifetime, torque and tracing abilities, machinery sealing material must have thermal property, corrosion resistance nature and the tribological property etc. of high strength, high elastic coefficient (rigidity), high rigidity, excellence.Silicon carbide ceramics is a kind of machinery sealing material of novel, superior performance, and it is in light weight, specific tenacity is high, capability of resistance to radiation is strong; Have certain self lubricity, frictional coefficient is little; The hardness height, wear-resistant, the group good to performance; Chemical stability height, corrosion-resistant; Heat conductivility is good, thermal shock resistance good.As machinery sealing material of new generation, silicon carbide ceramics has been defined as since metal, aluminum oxide, Wimet basic sealing material of the 4th generation in the world.But silicon carbide ceramics is not so good as graphite as machinery sealing material in self-lubricating property, causes its poor-performing of anti-the metal to-metal contact, has reduced its reliability to a certain extent, has limited its application in the special operation condition field.
Usually improve the metal to-metal contact performance of silicon carbide ceramics though have units such as in silicon carbide ceramics, adding nickel, titanium or graphite, but still have following problem:
(1) adds the self lubricity that metal, graphite improve silicon carbide ceramics at present, mostly its matrix is silicon carbide reaction-sintered, because there are causes such as free silica, silicon-dioxide in silicon carbide reaction-sintered, ceramic over-all properties is not high, is progressively replaced by pressureless sintering silicon carbide.
(2) because the difference of specific gravity of metal, graphite and silicon carbide is bigger, dispersal mechanism also is not quite similar, adopt conventional mechanical ball milling blended mode to be difficult to obtain the uniform composite granule of composition, cause ceramic post sintering not fine and close, and influence final mechanical property, frictional behaviour and high wear rate.
(3) graphite and metallic element with respect to silicon carbide be weak mutually after, intensity, the fracture toughness property of containing metal or graphite silicon carbide ceramics all can decrease.How guaranteeing that silicon carbide ceramics obtains not reduce its mechanical property in the good metal to-metal contact performance, this becomes the major issue of puzzlement metal to-metal contact silicon carbide sealing material preparation.
Therefore, be necessary to develop the silicon carbide ceramic seal material of low-friction coefficient and wear rate,, guarantee that simultaneously the bending strength of silicon carbide ceramics, fracture toughness property can not obviously reduce to improve the self-lubricating property of silicon carbide machinery sealing material.
Summary of the invention
At the deficiencies in the prior art, one of purpose of the present invention provides a kind of silicon carbide carbonized (SiC/C) complex phase ceramic sealing material, its reasonable ratio, characteristic such as have low-friction coefficient, low wear rate, bending strength is big, fracture toughness property is good.
Two of purpose of the present invention provides the preparation method of a kind of silicon carbide carbonized (SiC/C) complex phase ceramic sealing material, characteristic such as the silicon carbide ceramics produced of method has low-friction coefficient, low wear rate thus, bending strength is big, fracture toughness property is good.
For reaching one of above purpose, the present invention realizes by such technical scheme: a kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide is matrix, silicon carbide, norbide and carbon dust are main raw material, each composition weight proportioning is: 100 parts of silicon carbide powders, 0.1 part～1 part of norbide, 5 parts～30 parts of carbon dusts, binding agent PVA0.5 part～3 parts, 0.5 part～1.5 parts of dispersion agents.Described carbon dust is a Graphite Powder 99, and described binding agent PVA is a polyvinyl alcohol, and described dispersion agent is the tetramethyl-oxyammonia.
For reaching two of above purpose, the present invention realizes by such technical scheme: a kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
(1) silicon carbide powder, norbide, carbon dust, binding agent, dispersion agent are joined in the deionized water after the proportioning by a certain percentage, ball milling mixes after 12 hours～24 hours, and being mixed with the solid phase weight content is 40%～60% water base silicon carbide compound slurry;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 200 ℃～250 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2000 ℃～2100 ℃, is incubated 1 hour～1.5 hours, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
Need to prove, solid phase weight content described in the step (2) is 40%～60% water base silicon carbide slip, its solid phase weight content is meant: (main raw material) ÷ (main raw material+binding agent+dispersion agent+deionized water)=40%～60%, above-mentioned per-cent is weight percentage.
The present invention silicon carbide carbonized (SiC/C) complex phase ceramic sealing material and preparation method thereof has the following advantages:
(1) silicon carbide carbonized (SiC/C) complex phase ceramic sealing material, reasonable ratio can make characteristics such as it has low-friction coefficient, low wear rate, bending strength is big, fracture toughness property is good, and volume density is 2.87g/cm
3～2.92g/cm
3, hardness HRA is 88～91, and bending strength is 210MPa～280MPa, and Young's modulus is 230GPa～270GPa.
(2) introduced the superior carbon dust (graphite) of self-lubricating property after, the metal to-metal contact performance of silicon carbide carbonized complex phase ceramic sealing material obviously improves, its frictional coefficient only is 0.01～0.02.
(3) preparation method adopts water base silicon carbide slip and spray granulation, makes carbon dust (graphite) uniform distribution in silicon carbide substrate, helps to improve the self lubricity of silicon carbide.
(4) adopt norbide as sintering aid, not only reduced the sintering temperature of sealing material, but also overcome the problem that carbon dust (graphite) brings silicon carbide ceramics sintering variation.
Embodiment
Embodiment 1:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight proportioning is: silicon carbide powder 100Kg, norbide 1Kg, carbon dust 30Kg, binding agent PVA3Kg, dispersion agent 1.5Kg.
Embodiment 2:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight content is: silicon carbide powder 100Kg, norbide 0.1Kg, carbon dust 5Kg, binding agent PVA0.5Kg, dispersion agent 0.5Kg.
Embodiment 3:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight content is: silicon carbide powder 100Kg, norbide 0.55Kg, carbon dust 17.5Kg, binding agent PVA1.75Kg, dispersion agent 1Kg.
Embodiment 4:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight proportioning is: silicon carbide powder 100Kg, norbide 0.5Kg, carbon dust 20Kg, binding agent PVA1Kg, dispersion agent 1.2Kg.
Embodiment 5:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight proportioning is: silicon carbide powder 100Kg, norbide 0.8Kg, carbon dust 10Kg, binding agent PVA0.8Kg, dispersion agent 0.9Kg.
Embodiment 6:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight proportioning is: silicon carbide powder 100Kg, norbide 0.2Kg, carbon dust 6Kg, binding agent PVA0.6Kg, dispersion agent 0.6Kg.
Embodiment 7:
A kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide powder are matrix, and silicon carbide powder, norbide and carbon dust are main raw material, each composition weight proportioning is: silicon carbide powder 100Kg, norbide 0.9Kg, carbon dust 29Kg, binding agent PVA2.9Kg, dispersion agent 1.4Kg.
Embodiment 8:
A kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
(1) silicon carbide powder, norbide, carbon dust, binding agent, dispersion agent are joined in the deionized water after the proportioning by a certain percentage, ball milling mixed after 12 hours, and being mixed with the solid phase weight content is 40% water base silicon carbide compound slurry;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 200 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2000 ℃, is incubated 1 hour, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
Embodiment 9:
A kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
(1) silicon carbide powder, norbide, carbon dust, binding agent, dispersion agent are joined in the deionized water after the proportioning by a certain percentage, ball milling mixed after 24 hours, and being mixed with the solid phase weight content is 60% water base silicon carbide compound slurry;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 250 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2100 ℃, is incubated 1.5 hours, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
Embodiment 10:
A kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
(1) silicon carbide powder, norbide, carbon dust, binding agent, dispersion agent are joined in the deionized water after the proportioning by a certain percentage, ball milling mixed after 18 hours, and being mixed with the solid phase weight content is 50% water base silicon carbide compound slurry;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 225 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2050 ℃, is incubated 1.25 hours, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
Embodiment 11:
A kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
Carry out following steps successively:
(1) with silicon carbide powder 100Kg, norbide 1Kg, Graphite Powder 99 30Kg, polyvinyl alcohol 3Kg, tetramethyl-oxyammonia 1.5Kg joins in the deionized water, and ball milling mixed 24 hours, was mixed with the solid phase weight content and is 40% water base silicon carbide slip;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 220 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2000 ℃, is incubated 1 hour, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
The silicon carbide carbonized complex phase ceramic sealing material frictional coefficient is 0.01, and volume density is 2.87g/cm
3, hardness is 89HRA, and bending strength is 220MPa, and Young's modulus is 240GPa.
Embodiment 12:
A kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
Carry out following steps successively:
(1) with silicon carbide powder 100Kg, norbide 0.1Kg, Graphite Powder 99 5Kg, polyvinyl alcohol 0.5Kg, tetramethyl-oxyammonia 0.5Kg, join in the deionized water, ball milling mixed 12 hours, was mixed with the solid phase weight content and is 60% water base silicon carbide slip;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 220 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2000 ℃, is incubated 1.5 hours, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
The silicon carbide carbonized complex phase ceramic sealing material frictional coefficient is 0.02, and volume density is 2.91g/cm
3, hardness is 91HRA, and bending strength is 255MPa, and Young's modulus is 270GPa.
Embodiment 13:
A kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material may further comprise the steps successively:
Carry out following steps successively:
(1) with silicon carbide powder 100Kg, norbide 0.15Kg, Graphite Powder 99 15Kg, polyvinyl alcohol 1.2Kg, tetramethyl-oxyammonia 1.2Kg, join in the deionized water, ball milling mixed 16 hours, was mixed with the solid phase weight content and is 50% water base silicon carbide slip;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 220 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2050 ℃, is incubated 1 hour, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
The silicon carbide carbonized complex phase ceramic sealing material frictional coefficient is 0.015, and volume density is 2.90g/cm
3, hardness is 91HRA, and bending strength is 240MPa, and Young's modulus is 250GPa.
At last, it is also to be noted that what more than enumerate only is several specific embodiments of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention all should be thought protection scope of the present invention.
Claims (5)
1, a kind of silicon carbide carbonized complex phase ceramic sealing material, silicon carbide is matrix, silicon carbide, norbide and carbon dust are main raw material, it is characterized in that: each composition weight proportioning is: 100 parts of silicon carbide powders, 0.1 part～1 part of norbide, 5 parts～30 parts of carbon dusts, binding agent PVA0.5 part～3 parts, 0.5 part～1.5 parts of dispersion agents.
2, a kind of silicon carbide carbonized complex phase ceramic sealing material according to claim 1 is characterized in that: described carbon dust is a Graphite Powder 99.
3, a kind of silicon carbide carbonized complex phase ceramic sealing material according to claim 1 is characterized in that: described binding agent PVA is a polyvinyl alcohol.
4, a kind of silicon carbide carbonized complex phase ceramic sealing material according to claim 1 is characterized in that: described dispersion agent is the tetramethyl-oxyammonia.
5, a kind of preparation method of silicon carbide carbonized complex phase ceramic sealing material is characterized in that: may further comprise the steps successively:
(1) silicon carbide powder, norbide, carbon dust, binding agent, dispersion agent are joined in the deionized water after the proportioning by a certain percentage, ball milling mixes after 12 hours～24 hours, and being mixed with the solid phase weight content is 40%～60% water base silicon carbide compound slurry;
(2) adopt atomizing granulating technology that above-mentioned water base silicon carbide compound slurry is carried out spraying drying, obtain silicon carbide granulating powder; The hot blast inlet temperature is 200 ℃～250 ℃;
(3) above-mentioned silicon carbide granulating powder is adopted 140MPa dry-pressing precompressed and the moulding of 200MPa cold isostatic pressing end pressing two-step mode, obtain highdensity sealing material base substrate;
(4) the sealing material base substrate with above-specified high density is placed in the vacuum non-pressure sintering furnace, is warming up to 2000 ℃～2100 ℃, is incubated 1 hour～1.5 hours, and sintering obtains silicon carbide carbonized complex phase ceramic sealing material after finishing.
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