CN112769103A - Transient supporting protection system for super capacitor - Google Patents
Transient supporting protection system for super capacitor Download PDFInfo
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- CN112769103A CN112769103A CN202011587655.5A CN202011587655A CN112769103A CN 112769103 A CN112769103 A CN 112769103A CN 202011587655 A CN202011587655 A CN 202011587655A CN 112769103 A CN112769103 A CN 112769103A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/16—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for capacitors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/345—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering using capacitors as storage or buffering devices
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Abstract
The invention belongs to the technical field of super capacitors, and discloses a transient supporting and protecting system for a super capacitor, which comprises the super capacitor connected with a processor, wherein the output end of the super capacitor is connected with an external system through a one-way conduction module, a switch module and a sampling module in sequence, the one-way conduction module is also connected with the processor, the one-way conduction module is used for controlling the one-way output power supply of the super capacitor according to the pressure difference between the external system and the super capacitor, the switch module is used for controlling the electric connection between the external system and the super capacitor, the sampling module is used for collecting the change state of current signals from the external system, the processor judges whether the transient supporting and protecting system is interfered by high frequency according to the collection result of the sampling module, and then the switching-on and switching-off of the switch module are controlled by adopting a hysteresis control method in combination with the output voltage, the driving voltage of the unidirectional conduction module is ensured to meet the driving requirement during the period of high-frequency interference.
Description
Technical Field
The invention belongs to the technical field of super capacitors, and particularly relates to a transient supporting and protecting system for a super capacitor.
Background
With the increasing popularization of super capacitors, the application and the demand of super capacitors are also more and more extensive, and because super capacitors have very strong processing capacity of peak power and peak current, the super capacitors can reach the charging and discharging capacity of 100C, and can discharge to 0V, unlike lithium batteries, do not support the discharge to 0V, therefore, in many occasions needing to process larger peak current and peak power, the application of transient support of super capacitors is more and more, the corresponding transient support circuit requires both performance and cost and volume, and various application circuits are produced.
The traditional transient supporting circuit is basically unidirectional, or is combined with a special circuit to realize the function of an ideal diode, only basic overcurrent and overtemperature protection functions can be realized, and some complex protection functions such as low power consumption and pulse interference protection cannot be realized.
Disclosure of Invention
The invention provides a transient supporting protection system for a super capacitor, which solves the problems that the existing suspension supporting circuit of the super capacitor cannot realize low power consumption and pulse interference protection and the like.
The invention can be realized by the following technical scheme:
a transient supporting protection system for a super capacitor comprises the super capacitor connected with a processor, the output end of the super capacitor is connected with an external system sequentially through a one-way conduction module, a switch module and a sampling module, the one-way conduction module, the switch module and the sampling module are also connected with the processor, the one-way conduction module is used for controlling the one-way output power supply of the super capacitor according to the pressure difference between the external system and the super capacitor, the switch module is used for controlling the electric connection between the external system and the super capacitor, the sampling module is used for collecting the change state of current signals from the external system, the processor judges whether the transient supporting protection system is interfered by high frequency according to the collection result of the sampling module and then combines the output voltage of the super capacitor and the driving voltage of the one-way conduction module, and a hysteresis control method is adopted to control the on and off of the switch module, so that the driving voltage of the unidirectional conduction module is ensured to meet the driving requirement during the period of high-frequency interference.
Further, the unidirectional conduction module comprises an ideal diode controller chip with model 74700 and one or more first MOSEFT tubes connected with the ideal diode controller chip, the switch module comprises an MOSEFT tube driver chip with model 7003 and one or more second MOSEFT tubes connected with the MOSEFT tube driver chip, the sampling module is set as a resistor, two ends of the sampling module are respectively connected to an SNS pin and an SNS pin of the MOSEFT tube driver chip, an IMON pin of the MOSEFT tube driver chip is connected with the processor through a first sampling circuit, a VCAP pin of the ideal diode controller chip is connected with the processor through a second sampling circuit,
the processor judges whether the transient support protection system is subjected to high-frequency interference or not according to the detection value of the IMON pin, if so, judges whether the detection value of the VCAP pin and the voltage difference of the output end of the super capacitor are larger than the upper threshold of the hysteresis interval or not, and if so, controls the switch module to be switched on; and judging whether the detection value of the VCAP pin and the voltage difference of the output end of the super capacitor are smaller than the lower threshold of the hysteresis interval, if so, controlling the switch module to be closed.
Further, the upper threshold is set to be the sum of the maximum starting voltage of the base electrode and the grid electrode and a first threshold value when the MOSEFT tube is in saturation conduction, and the lower threshold is set to be the sum of the maximum starting voltage of the base electrode and the grid electrode and a second threshold value when the MOSEFT tube is in saturation conduction. .
Further, the higher the frequency of the high-frequency interference is, the higher the value of the first threshold value is, and the lower the frequency of the high-frequency interference is, the lower the value of the second threshold value is.
Further, a plurality of first mosfet transistors are connected in parallel and then connected with an ideal diode controller chip, a plurality of second mosfet transistors are connected in parallel and then connected with a mosfet driver chip, the first sampling circuit includes a resistor R909 and a capacitor C905 connected with an IMON pin, the second sampling circuit includes a resistor R917 and a resistor R918 connected in series, one end of the second sampling circuit is connected with a VCAP pin, and the other end of the second sampling circuit is connected with a resistor R919 and a capacitor C910 connected in parallel.
The beneficial technical effects of the invention are as follows:
by means of a super capacitor transient supporting circuit formed by the one-way conduction module, the switch module and the sampling module, the hysteresis control concept is adopted, the possibility of rapid reduction of the driving voltage caused by frequency switching of the one-way conduction module during high-frequency interference is reduced, the driving voltage of the one-way conduction module meets the driving requirement during the high-frequency interference is ensured, so that the one-way conduction module can normally work during the high-frequency interference, the influence of the high-frequency interference on the transient supporting protection system can be reduced to the greatest extent, meanwhile, the switch module controlled by the 7003 MOSEFT driver can get electricity from the input end of an external system, the one-way conduction module controlled by the 74700 ideal diode controller can get electricity from the output end of the super capacitor to supply electricity to the charge pump module inside the super capacitor, and the super capacitor transient supporting circuit can complete boosting operation under the shdown state, the driving capability of the MOSFET is satisfied, and therefore low-power-consumption operation of the whole transient support protection system can be achieved.
Drawings
FIG. 1 is a block diagram of the overall circuit configuration of the present invention;
FIG. 2 is a schematic diagram of a portion of the electrical connections using a model 7003 MOSEFT transistor driver and an 74700 ideal diode controller chip;
FIG. 3 is a diagram illustrating the variation of the first threshold with the frequency of the high frequency interference according to the present invention;
fig. 4 is a diagram illustrating the variation of the second threshold value with the frequency of the high frequency interference according to the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the invention is provided in connection with the accompanying drawings.
Referring to the attached figure 1, the invention provides a transient supporting and protecting system for a super capacitor, which comprises the super capacitor connected with a processor, wherein the output end of the super capacitor is connected with an external system through a one-way conduction module, a switch module and a sampling module in sequence, the one-way conduction module, the switch module and the sampling module are also connected with the processor, the one-way conduction module is used for controlling the one-way output power supply of the super capacitor according to the voltage difference between the external system and the super capacitor, the switch module is used for controlling the electric connection between the external system and the super capacitor, the sampling module is used for collecting the change state of current signals from the external system, the processor judges whether the transient supporting and protecting system is interfered by high frequency according to the collection result of the sampling module, and then the output voltage of the super capacitor and the driving voltage of the one-way conduction module are combined, and a hysteresis control method is adopted to control the on and off of the switch module, so that the driving voltage of the unidirectional conduction module is ensured to meet the driving requirement during the period of high-frequency interference. Therefore, by means of a super-capacitor transient supporting circuit formed by the one-way conduction module, the switch module and the sampling module, the hysteresis control idea is adopted, the possibility of rapid reduction of the driving voltage caused by the frequency switch of the one-way conduction module during the high-frequency interference is reduced, and the driving voltage of the one-way conduction module meets the driving requirement during the high-frequency interference, so that the one-way conduction module can normally work during the high-frequency interference, and the influence of the high-frequency interference on the transient supporting and protecting system can be reduced as much as possible.
The ideal diode controller chip can be adopted to manufacture a unidirectional conduction module, specifically, the unidirectional conduction module comprises an ideal diode controller chip with model number 74700 and one or more first N-channel MOSFET (metal-oxide-semiconductor field effect transistor) connected with the ideal diode controller chip, the first N-channel MOSFET is connected with the MOSFET driver chip after being connected in parallel, the driving capability of the whole transient supporting protection system can be increased, the chip is an ideal diode controller which conforms to the AECQ100 standard of an automobile and works with an external N-channel MOSFET (metal-oxide-semiconductor field effect transistor), the chip can be used as an ideal diode rectifier to realize low-loss reverse protection by using 20mV (positive-negative) voltage drop, and the wide power input range of 3.2V to 65V can realize the low-loss reverse protection of a plurality of common DC bus voltages such as: control of 12V, 24V and 48V automotive battery systems and the like, particularly 3.2V input voltage support, is well suited for severe cold start requirements in automotive systems.
The device adjusts the forward voltage drop to 20mV by controlling the grid of the MOSFET, namely when the input voltage of an external system is less than 20mV of the output end of the super capacitor, the MOSFET controlled by the device is conducted, the super capacitor supplies power to the external system such as an automobile starting system, a high-voltage transmission control system and the like until the voltage of the input end of the external system is higher than the voltage of the output end of the super capacitor, the MOSFET controlled by the device is turned off, and the power supply to the external system is stopped, but when the external system is subjected to high-frequency interference to cause the fluctuation of the input voltage, a one-way conduction module consisting of the device and the MOSFET is frequently turned on and off, so that the charge pump boosting for driving the MOSFET inside the device is slowed, the driving capability is insufficient, the whole one-way conduction module falls into a complete turn-off state and becomes an uncontrollable device, and the requirement of the external system cannot be quickly responded, therefore, the transient support protection system is additionally provided with the switch module, the aim of turning off the whole transient support loop to protect the system is achieved by turning off the switch module, meanwhile, the switching frequency of the one-way conduction module during the high-frequency interference is reduced by utilizing a hysteresis control method, sufficient working time is provided for the charge pump module in the device, and the module is ensured to have sufficient capacity of driving the MOSFET.
Specifically, the switch module comprises a MOSEFT tube driver chip and one or more second N-channel MOSEFT tubes connected with the MOSEFT tube driver chip, the second N-channel MOSEFT tubes are connected with the MOSEFT tube driver chip after being connected in parallel, the overcurrent capacity of the whole transient support protection system can be increased, the driver chip can adopt a MOSEFT tube driver with the model number of 7003, the MOSEFT tube driver is a Video semiconductor push-out high-speed and high-voltage side N-channel MOSFET tube driver, the device can work by using a power supply voltage of up to 60V, an internal charge pump module comprehensively enhances the switching function of an external N-channel MOSFET tube so as to be capable of being kept on indefinitely, and a powerful 1 omega gate driver of the device can drive a large gate capacitor MOSFET very easily with very short switching time and propagation delay of 35ns, so that the device is very suitable for high-frequency switching and static switching applications.
An IMON pin of the MOSEFT driver chip is connected with a processor through a first sampling circuit, a sampling module is set as a resistor, two ends of the sampling module are respectively connected to an SNS-pin and an SNS + pin of the MOSEFT driver chip, meanwhile, a VCAP pin of the ideal diode controller chip is connected with the processor through a second sampling circuit, the VCAP pin is the voltage of an output end of a charge pump inside the VCAP pin, therefore, the detection value of the IMON pin can amplify the amplitude and the frequency of high-frequency interference detected by the sampling module by 20 times and transmits the amplified high-frequency interference to the processor, the processor judges whether the transient supporting protection system is subjected to the high-frequency interference according to the detection value of the IMON pin, if yes, the detection value of the VCAP pin and the voltage difference of the output end of a super capacitor are larger than the upper threshold of a hysteresis interval, and if yes, a switch module is controlled to be switched; whether the detection value of the VCAP pin and the voltage difference of the output end of the super capacitor are smaller than the lower threshold of the hysteresis interval or not is judged, if yes, the switch module is controlled to be closed, and the specific circuit connection is as follows:
as shown in fig. 2, a GATE pin and a CATHODE pin of an ideal diode controller chip with model number 74700 correspond to a driving Q904 MOSFET transistor, a pin ANODE is connected to an output terminal of a super capacitor and is used for supplying power to a charge pump module inside the chip, a VCAP pin is an output terminal of the internal charge pump module, a C909 capacitor is an output filter capacitor of the charge pump module, an EN pin is an enable terminal of the chip, a second sampling circuit is formed by resistors R917 and R918 connected in series, a R919 connected in parallel and a capacitor C910, one end of the second sampling circuit is connected to a VCAP pin, and the other end of the second sampling circuit is connected to a processor.
A charge pump module is integrated in a BST pin of a MOSFET driver chip with the model of LTC7003 and used for generating a voltage signal for driving the MOSFET, a capacitor C902 is a capacitor output by the internal charge pump module, TS, TGDN and TGUP pins are used for driving a base electrode and a source electrode corresponding to the (Q901, Q902) MOSFET, resistors R902 and R903 are base electrode driving resistors, SNS-and SNS + pins are used for detecting current flowing through a resistor R901 in a sampling module, the differential filter is formed by resistors R904 and R920 and a capacitor C903 and is connected with a resistor R901, a VIN pin is the power input of the chip, the RUN pin is the enable end of the chip and is connected with the processor, the OVLO pin and the VCCUV pin realize the overvoltage and undervoltage protection functions, currently, when the current is disabled, the IMON pin amplifies a sampled current signal, that is, a current flowing through the resistor R901 by 20 times and outputs the amplified current signal, which is connected to the processor through a first sampling circuit consisting of a resistor R909 and a capacitor C905.
The working process of the transient support protection system is as follows:
the upper threshold of the hysteresis interval may be set to a sum of a maximum start voltage of the base and the gate and a first threshold, such as 6V, when the mosfet is in saturation conduction, to ensure reliable conduction, and the lower threshold may be set to a sum of a maximum start voltage of the base and the gate and a second threshold, such as 5V, when the mosfet is in saturation conduction.
Firstly, the voltage of a VCAP pin and the voltage of an output end UB of a super capacitor are obtained through a second sampling circuit, when the power is powered on for the first time, the LTC7003 gets power from the input end of an external system by virtue of a body diode of a MOSFET (Q901, Q902) controlled by the LTC7003, or gets power from the output end of the super capacitor by virtue of a body diode of a MOSFET (Q903, Q904) controlled by an LM74700 chip, the processor controls an enable end 74700_ EN to be set high, so that an internal charge pump module of the LM74700 chip starts to work, the voltage of a capacitor C909 gradually rises, when the voltage is greater than 6V, namely the voltage of the output end of the VCAP pin is higher than the voltage of the output end of the super capacitor by 6V, the upper threshold of a hysteresis interval is reached, the MOSFET (Q903, Q904) of the LM74700 chip controller starts to work, the processor enables the chip 7003_ RUN pin to enable the LTC7003, the corresponding switch module is controlled to start to work, and the, before the LTC7003 chip is enabled, the MOSFET tubes Q901 and Q902 controlled by the LTC7003 chip are in an off state, and at the moment, if an external system has high-current transient supporting interference, the high-current transient supporting interference cannot flow through the transient supporting protection circuit, so that the anti-interference capability is increased when the LTC7003 chip is powered on for the first time.
Secondly, after the transient supporting system of the invention normally works, because both LM74700 and LTC7003 are supplied with power by the internal charge pump module to drive the MOSFET tube, the driving capability is limited, and cannot support the switching work with the switching frequency greater than 1kHz, for the large current exceeding 100A, the frequency of the whole transient supporting protection system cannot exceed 1kHz due to the effects of parasitic inductance and distributed capacitance, but when the input end of the external system has a disturbance signal of low current with high frequency, for example, the disturbance signal of low current with frequency of 5kHz amplitude 10A, the voltage of the output end of the charge pump module of the LM74700 chip is suddenly reduced after several cycles of switching, the voltage of the output end thereof is insufficient to drive the MOSFET tubes Q903, Q904, if no control is performed, the MOSFET tubes Q903, Q904 cannot be normally driven to be turned on and off, thereby causing the body diodes of the current flowing through the MOSFET tubes Q903, Q904 to be burnt due to heat, therefore, the invention provides a solution, namely, the frequency and amplitude of high-frequency interference from an external system are detected according to a detection signal of an IMON pin of an LTC7003 chip, so as to judge whether a disturbance signal higher than 1kHz exists; of course, the voltage change rate of the output filter capacitor C909 of the charge pump module of the 74700 chip may also be detected to determine whether there is a disturbance signal higher than 1 kHz. When high-frequency interference occurs, whether the difference value between the output value of the VCAP pin and the output end of the super capacitor is smaller than 5V or not is judged, the value is adjustable, if yes, the processor controls to close the LTC7003 chip through the 7003_ RUN pin instead of closing the LM74700 chip, so that a transient supporting circuit path is closed, due to the fact that a hysteresis control mode is adopted, sufficient boosting time can be provided for a charge pump module of the LM74700 chip, the voltage of the output value of the VCAP pin is waited to rise, when the voltage exceeds the output end voltage of the super capacitor by more than 6V, the value is also adjustable, sufficient driving capacity can be achieved, then the processor controls to open the LTC7003 chip through the 7003_ RUN pin, so that the whole transient supporting and protecting system starts to work normally, the unidirectional conduction module is ensured not to be in a complete turn-off state, and the high-frequency interference resistance is achieved while.
Meanwhile, after the transient support protection system is powered on for the first time, firstly, the LM74700 chip is enabled, the voltage of a VCAP pin is waited to be higher than 6V, then, the LTC7003 chip is enabled, the transient support circuit starts to work normally, all devices are required to be controlled after the system enters a low power consumption mode, namely, the power supply of power supply input ends of all devices is normal, the low power consumption mode of the devices under the shut down mode is used for realizing the low power consumption operation of the whole system, after the super capacitor module receives a command of entering the low power consumption sent by a vehicle control system, the LTC7003 chip enters a shut down mode, then, the LM74700 chip also enters a shut down mode, but the LTC7003 chip can get power from an input end of an external system, the LM74700 chip can get power from an output end of a super capacitor and is used for supplying power to a charge pump module in the super capacitor, and the maximum on voltage of a base electrode and a grid electrode can be increased to be higher than the maximum on voltage of a MOSFET tube when the maximum saturation, the power supply has the capability of driving the controlled MOSFET, so that the MOSFET can be quickly put into an operating state after being suddenly commanded by the processor, and therefore, the low-power operation of the system can be realized.
Through experiments, based on the current frequency of the high-frequency interference detected by the user, the voltage VCAP of the C909 is detected, the LTC7003 is enabled or closed dynamically, and the relationship between the frequency of the high-frequency interference and the upper threshold and the lower threshold of the hysteresis interval is obtained, as shown in fig. 3 and 4, the corresponding first threshold and the second threshold can be adjusted according to actual needs, that is, the higher the frequency of the high-frequency interference is, the larger the value of the first threshold is, the lower the frequency of the high-frequency interference is, the smaller the value of the second threshold is, so that sufficient boosting time for a charge pump module of the LM74700 chip is ensured, and thus sufficient MOSFET driving capability of the LM74700 chip is ensured.
Although specific embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that these are merely examples and that many variations or modifications may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is therefore defined by the appended claims.
Claims (5)
1. A transient support protection system for an ultracapacitor, comprising: the transient supporting protection system comprises a super capacitor connected with a processor, the output end of the super capacitor is connected with an external system sequentially through a one-way conduction module, a switch module and a sampling module, the one-way conduction module, the switch module and the sampling module are further connected with the processor, the one-way conduction module is used for controlling one-way output power supply of the super capacitor according to the pressure difference between the external system and the super capacitor, the switch module is used for controlling electric connection between the external system and the super capacitor, the sampling module is used for collecting the change state of current signals from the external system, the processor judges whether the transient supporting protection system is subjected to high-frequency interference according to the collection result of the sampling module, and controls the conduction and the closing of the switch module by combining the output voltage of the super capacitor and the driving voltage of the one-way conduction module and adopting a hysteresis control method, the driving voltage of the unidirectional conduction module is ensured to meet the driving requirement during the period of high-frequency interference.
2. The transient support protection system for an ultracapacitor of claim 1, wherein: the unidirectional conduction module comprises an ideal diode controller chip with the model of 74700 and one or more first MOSEFT tubes connected with the ideal diode controller chip, the switch module comprises an MOSEFT tube driver chip with the model of 7003 and one or more second MOSEFT tubes connected with the MOSEFT tube driver chip, the sampling module is set to be a resistor, the two ends of the sampling module are respectively connected to an SNS pin and an SNS pin of the MOSEFT tube driver chip, an IMON pin of the MOSEFT tube driver chip is connected with the processor through a first sampling circuit, a VCAP pin of the ideal diode controller chip is connected with the processor through a second sampling circuit,
the processor judges whether the transient support protection system is subjected to high-frequency interference or not according to the detection value of the IMON pin, if so, judges whether the detection value of the VCAP pin and the voltage difference of the output end of the super capacitor are larger than the upper threshold of the hysteresis interval or not, and if so, controls the switch module to be switched on; and judging whether the detection value of the VCAP pin and the voltage difference of the output end of the super capacitor are smaller than the lower threshold of the hysteresis interval, if so, controlling the switch module to be closed.
3. The transient support protection system for an ultracapacitor of claim 2, wherein: the upper threshold is set to be the sum of the maximum starting voltage of the base electrode and the grid electrode and a first threshold value when the MOSEFT tube is in saturation conduction, and the lower threshold is set to be the sum of the maximum starting voltage of the base electrode and the grid electrode and a second threshold value when the MOSEFT tube is in saturation conduction.
4. The transient support protection system for an ultracapacitor of claim 3, wherein: the higher the frequency of the high-frequency interference, the higher the value of the first threshold value, and the lower the frequency of the high-frequency interference, the lower the value of the second threshold value.
5. The transient support protection system for an ultracapacitor of claim 2, wherein: the first MOSEFT transistors are connected in parallel and then connected with an ideal diode controller chip, the second MOSEFT transistors are connected in parallel and then connected with an MOSEFT driver chip, the first sampling circuit comprises a resistor R909 and a capacitor C905 which are connected with an IMON pin, the second sampling circuit comprises a resistor R917 and a resistor R918 which are connected in series, one end of the second sampling circuit is connected with a VCAP pin, and the other end of the second sampling circuit is connected with a resistor R919 and a capacitor C910 which are connected in parallel.
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| WO2024008277A1 (en) * | 2022-07-05 | 2024-01-11 | Vestel Elektronik Sanayi Ve Ticaret A.S. | Circuit for providing electrical energy from a rechargeable battery to a load |
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