CN112751322A - IGBT tube protection circuit, method, IGBT circuit and device - Google Patents

IGBT tube protection circuit, method, IGBT circuit and device Download PDF

Info

Publication number
CN112751322A
CN112751322A CN201911056421.5A CN201911056421A CN112751322A CN 112751322 A CN112751322 A CN 112751322A CN 201911056421 A CN201911056421 A CN 201911056421A CN 112751322 A CN112751322 A CN 112751322A
Authority
CN
China
Prior art keywords
igbt
igbt tube
circuit
voltage
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911056421.5A
Other languages
Chinese (zh)
Inventor
余伟
罗海辉
袁涛
邓江辉
周望君
江普生
肖艳艳
刘凯
杨越
姚尧
刘敏安
凌浪波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhuzhou CRRC Times Electric Co Ltd
Original Assignee
Zhuzhou CRRC Times Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhuzhou CRRC Times Electric Co Ltd filed Critical Zhuzhou CRRC Times Electric Co Ltd
Priority to CN201911056421.5A priority Critical patent/CN112751322A/en
Publication of CN112751322A publication Critical patent/CN112751322A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

The invention discloses an IGBT tube protection circuit, an IGBT tube protection method, an IGBT circuit and IGBT equipment, and relates to the technical field of circuits. The invention has the beneficial effects that: the gate voltage of the IGBT tube can be reduced when the IGBT tube is short-circuited, so that the increase of the gate voltage of the IGBT tube is suppressed, the short-circuit current is greatly reduced, and the IGBT tube short-circuit protection circuit is particularly suitable for two-type and three-type short-circuit working conditions of the IGBT tube, and is simple and practical in whole circuit design and easy to realize.

Description

IGBT tube protection circuit, method, IGBT circuit and device
Technical Field
The invention belongs to the technical field of circuits, and particularly relates to an IGBT tube protection circuit, an IGBT tube protection method, an IGBT circuit and IGBT equipment.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device consisting of a Bipolar Junction Transistor (BJT) and an Insulated Gate field effect Transistor (MOS), and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR.
In the application process of the IGBT tube, faults often occur, so that the IGBT tube is short-circuited. When the IGBT tube is in a short-circuit working condition, the device is required to be turned off within a specified short-circuit time, and the phenomenon that the IGBT tube generates an overhigh short-circuit peak current is also required to be avoided. The short-circuit current of the IGBT tube is in direct proportion to the square of the voltage between the grid electrode and the emitter electrode, when the IGBT tube is short-circuited, the voltage between the grid electrode and the emitter electrode is raised due to the Miller effect, and when the IGBT tube is serious, a large short-circuit peak current is generated, so that a device fails. Therefore, how to effectively limit the gate voltage when the IGBT tube is short-circuited to prevent the IGBT tube from failing becomes an increasingly important issue.
Disclosure of Invention
The invention provides an IGBT tube protection circuit, an IGBT tube protection method, an IGBT circuit and IGBT equipment, wherein the IGBT tube protection circuit, the IGBT circuit and the IGBT equipment can reduce the grid voltage of the IGBT tube when the IGBT tube is short-circuited.
In a first aspect, an embodiment of the present invention provides an IGBT protection circuit, including:
and the short-circuit protection unit is connected between the grid electrode and the main emitter of the IGBT tube and is used for reducing the grid voltage of the IGBT tube when the voltage between the grid electrode and the main emitter of the IGBT tube exceeds a preset threshold value.
According to an embodiment of the present invention, the short-circuit protection unit includes:
and the cathode of the unidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the anode of the unidirectional transient suppression diode is connected with the main emitter of the IGBT tube.
According to another embodiment of the present invention, the short-circuit protection unit includes:
and one end of the bidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the other end of the bidirectional transient suppression diode is connected with the main emitter electrode of the IGBT tube.
According to another embodiment of the present invention, further comprising:
and the voltage detection unit is used for detecting the voltage between the grid electrode and the main emitter of the IGBT tube.
In a second aspect, an embodiment of the present invention further provides an IGBT circuit, including:
an IGBT tube; and
the IGBT tube protection circuit comprises a short-circuit protection unit, wherein the short-circuit protection unit is connected between a grid electrode and a main emitter of the IGBT tube and used for reducing the grid voltage of the IGBT tube when the voltage between the grid electrode and the main emitter of the IGBT tube exceeds a preset threshold value.
Further, the short-circuit protection unit includes:
and the cathode of the unidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the anode of the unidirectional transient suppression diode is connected with the main emitter of the IGBT tube.
Further, the short-circuit protection unit includes:
and one end of the bidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the other end of the bidirectional transient suppression diode is connected with the main emitter electrode of the IGBT tube.
Further, still include:
and the voltage detection unit is used for detecting the voltage between the grid electrode and the main emitter of the IGBT tube.
In a third aspect, an embodiment of the present invention further provides an apparatus, including the IGBT circuit according to any one of the above embodiments.
In a fourth aspect, an embodiment of the present invention further provides a method for protecting an IGBT tube by using the IGBT tube protection circuit according to any one of the above embodiments, including:
and when the voltage between the grid electrode and the main emitter electrode of the IGBT tube exceeds a preset threshold value, reducing the grid electrode voltage of the IGBT tube by using a short-circuit protection unit of the IGBT tube protection circuit.
According to the IGBT tube protection circuit, the IGBT tube protection method, the IGBT circuit and the IGBT device, the short-circuit protection unit is connected between the grid electrode and the main emitter electrode of the IGBT tube, and when the voltage between the grid electrode and the main emitter electrode of the IGBT tube exceeds a preset threshold value, the grid electrode voltage of the IGBT tube is reduced. Thereby realizing the short-circuit protection of the IGBT tube. Therefore, the IGBT tube protection circuit provided by the embodiment of the invention can effectively inhibit the peak current when the IGBT tube is short-circuited, is particularly suitable for the second-class and third-class short-circuit working conditions of the IGBT tube, and is simple and practical in whole circuit design and easy to realize.
Drawings
The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. Wherein the included drawings are:
fig. 1 shows a schematic structure diagram of a common IGBT tube;
fig. 2 shows a schematic structural diagram of an IGBT protection circuit according to an embodiment of the present invention;
fig. 3 shows a schematic structural diagram of an IGBT protection circuit according to a second embodiment of the present invention;
fig. 4 is a schematic diagram showing another structure of an IGBT protection circuit according to a second embodiment of the present invention;
fig. 5 shows a schematic diagram of an IGBT protection circuit according to a second embodiment of the present invention;
fig. 6 shows a waveform schematic diagram of an IGBT tube protection circuit according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the following will describe in detail an implementation method of the present invention with reference to the accompanying drawings and embodiments, so that how to apply technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar junction Transistor) and MOS (Insulated Gate field effect Transistor), and has the advantages of both high input impedance of MOSFET and low on-state voltage drop of GTR. The high-frequency high-voltage high-current alternating current power supply has high frequency, high voltage and high current, and is particularly suitable for being applied to alternating current systems with direct current voltage of 600V or more, such as alternating current motors, frequency converters, switching power supplies, lighting power, traction transmission and other fields.
Fig. 1 shows a schematic structural diagram of a common IGBT, as shown in fig. 1, the IGBT includes a collector, a gate, a sub-emitter, and a main emitter, wherein the gate and the sub-emitter of the IGBT are respectively connected to an IGBT driving circuit, and the main emitter is connected to a main circuit.
Example one
According to an embodiment of the present invention, an IGBT tube protection circuit is provided, and fig. 2 shows a schematic structural diagram of an IGBT tube protection circuit according to an embodiment of the present invention, and as shown in fig. 2, the IGBT tube protection circuit includes:
and the short-circuit protection unit is connected between the grid electrode and the main emitter of the IGBT tube and is used for reducing the grid voltage of the IGBT tube when the voltage between the grid electrode and the main emitter of the IGBT tube exceeds a preset threshold value.
Here, since the main emitter and the sub-emitter of the IGBT are connected by a wire, a parasitic inductance L inevitably exists. Since the inductance value of the parasitic inductance L is very small, the voltage between the main emitter and the sub-emitter is hardly sensed when the IGBT tube is in normal operation. However, when the IGBT is short-circuited, a high forward current change rate di/dt is generated, and the current change rate can reach several kiloamperes. This high forward current rate of change di/dt results in an induced voltage across the parasitic inductance L, which may reach several tens of volts.
The short-circuit protection unit is connected between the grid electrode and the main emitter of the IGBT tube, and after the parasitic inductor L generates induced voltage, the voltage limiting function of the short-circuit protection unit is triggered. Therefore, when the IGBT tube is short-circuited, the grid voltage of the IGBT tube is reduced, the effect of reducing the grid voltage of the IGBT tube is achieved, and the effect of greatly reducing short-circuit current can be achieved.
It should be noted that, in an alternative embodiment, the IGBT tube protection circuit may further include:
and the voltage detection unit is used for detecting the voltage between the grid electrode and the main emitter of the IGBT tube.
Here, the voltage detection unit can detect a voltage between the gate and the main emitter of the IGBT tube, and when the voltage between the gate and the main emitter of the IGBT tube exceeds a preset threshold, the short-circuit protection unit is triggered to reduce the gate voltage of the IGBT tube.
Example two
On the basis of the above embodiments, a second embodiment of the present invention may further provide an IGBT tube protection circuit. Fig. 3 shows a schematic structural diagram of an IGBT tube protection circuit according to a second embodiment of the present invention, and as shown in fig. 3, the IGBT tube protection circuit may include:
and a unidirectional transient suppression diode D1, wherein the cathode of the unidirectional transient suppression diode D1 is connected with the gate of the IGBT tube, and the anode of the unidirectional transient suppression diode D1 is connected with the main emitter of the IGBT tube.
It is worth to be noted that, under the condition that the IGBT tube normally operates, the unidirectional transient suppression diode D1 is in a reverse bias state, the resistance of the diode is close to infinity, almost no current flows inside the diode, and the normal operation of the IGBT tube is not affected. When the IGBT tube is short-circuited, the spike pulse generated by the short-circuit may cause the unidirectional transient suppression diode D1 to break down, resulting in the operating impedance thereof being reduced to an extremely low on-state value, thereby allowing a large current to pass through. Meanwhile, the grid voltage of the IGBT tube is clamped at a preset level, so that the IGBT tube is protected from being damaged.
Here, since the main emitter and the sub-emitter of the IGBT are connected by a wire, a parasitic inductance L inevitably exists. Since the inductance value of the parasitic inductance L is very small, the voltage between the main emitter and the sub-emitter is hardly sensed when the IGBT tube is in normal operation. However, when the IGBT is short-circuited, a high forward current change rate di/dt is generated, and the change of the current can reach several kiloamperes. This high forward current rate of change di/dt results in an induced voltage across the parasitic inductance L, which may reach several tens of volts.
By connecting the unidirectional transient suppression diode D1 between the gate and the main emitter of the IGBT tube, after the parasitic inductor L generates induced voltage, when the sum of the induced voltage and the gate voltage of the IGBT tube exceeds the suppression voltage of the unidirectional transient suppression diode D1, the voltage limiting function of the unidirectional transient suppression diode D1 is triggered, so that the gate voltage is reduced, the short-circuit current is greatly reduced, and the IGBT is prevented from being damaged.
It is worth noting that the voltage value of the unidirectional transient suppression diode D1 is determined according to actual conditions.
In an optional implementation manner, fig. 4 shows another schematic structural diagram of an IGBT tube protection circuit according to a second embodiment of the present invention, and as shown in fig. 4, the short-circuit protection unit may further include:
one end of the bidirectional transient suppression diode D2 is connected with the grid electrode of the IGBT tube, and the other end of the bidirectional transient suppression diode D2 is connected with the main emitter of the IGBT tube.
Here, a bi-directional transient suppression diode D2 is connected between the gate and the main emitter of the IGBT, and after the parasitic inductor L generates the induced voltage, when the sum of the induced voltage and the gate voltage of the IGBT exceeds the suppression voltage of the bi-directional transient suppression diode D2, the voltage limiting function of the bi-directional transient suppression diode D2 is triggered, so as to suppress the increase of the gate voltage of the IGBT, thereby greatly reducing the short-circuit current and preventing the IGBT from being damaged.
It should be noted that, the bidirectional transient suppression diode D2 is connected here, so that the forward and reverse voltages of the IGBT can be independently adjusted, and the turn-on and turn-off processes of the IGBT are corresponded. In addition, the voltage value of the bidirectional transient suppression diode D2 is determined according to actual conditions.
In the embodiment, the transient suppression diode is connected between the gate and the main emitter of the IGBT tube, and the transient suppression diode includes a unidirectional transient suppression diode D1 or a bidirectional transient suppression diode D2. When the sum of the induced voltage generated by the parasitic inductor L and the grid voltage exceeds the suppression voltage of the transient suppression diode, the voltage limiting function of the transient suppression diode is triggered, and therefore the increase of the grid voltage of the IGBT tube is suppressed. By selecting a proper voltage value of the transient suppression diode, the grid voltage of the IGBT tube can be reduced, so that the short-circuit current is greatly reduced, and the device is prevented from losing efficacy. The IGBT short circuit suppression circuit has the advantages that the peak current of the IGBT tube during short circuit can be effectively suppressed, the IGBT short circuit suppression circuit is particularly suitable for the second-class short circuit working condition and the third-class short circuit working condition of the IGBT tube, and the whole circuit design is simple and practical and easy to achieve.
FIG. 5 is a schematic diagram of an IGBT tube protection circuit according to a second embodiment of the present invention, such as
FIG. 5 shows the change di/dt, I, of the high current generated when the IGBT is shortedCFrom the gate to the main emitter. An induced voltage Vs is generated across the parasitic inductance L of the main emitter. When the induced voltage Vs is equal to the gate voltage V of the IGBT tubeGEWhen the sum exceeds the suppression voltage of the bi-directional transient suppression diode D2, the voltage limiting function of the bi-directional transient suppression diode D2 is triggered. Thereby enabling the grid voltage V of the IGBT tubeGEAnd the short-circuit current is reduced to a larger extent, and the failure of the device is avoided.
Fig. 6 shows a waveform schematic diagram of an IGBT protection circuit according to a second embodiment of the present invention, as shown in fig. 6, when an IGBT is shorted, a high current change di/dt generated when the IGBT is shorted generates a large current ICThereby leading to the grid voltage V of the IGBT tubeGEAnd (4) rising. After connecting TVS tube, its peak current ICReducing the grid voltage V of the IGBT tubeGEAnd thus the IGBT tube is prevented from being damaged.
EXAMPLE III
According to an embodiment of the present invention, a third embodiment of the present invention may also provide an IGBT circuit, including:
an IGBT tube; and
the IGBT tube protection circuit comprises a short-circuit protection unit, wherein the short-circuit protection unit is connected between a grid electrode and a main emitter of the IGBT tube and used for reducing the grid voltage of the IGBT tube when the voltage between the grid electrode and the main emitter of the IGBT tube exceeds a preset threshold value.
In an alternative embodiment, the short-circuit protection unit includes:
and the cathode of the unidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the anode of the unidirectional transient suppression diode is connected with the main emitter of the IGBT tube.
In an alternative embodiment, the short-circuit protection unit includes:
and one end of the bidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the other end of the bidirectional transient suppression diode is connected with the main emitter electrode of the IGBT tube.
In an optional embodiment, further comprising:
and the voltage detection unit is used for detecting the voltage between the grid electrode and the main emitter of the IGBT tube.
Example four
According to an embodiment of the present invention, an apparatus may also be provided, which includes the IGBT circuit according to any one of the above embodiments.
It is worth mentioning that the apparatus may comprise one of an ac motor, a frequency converter, a power switch, an electric lighting device and a traction drive.
EXAMPLE five
According to an embodiment of the present invention, an embodiment five of the present invention further provides a method for protecting an IGBT pipe by using the IGBT pipe protection circuit according to any one of the above embodiments, including:
and when the voltage between the grid electrode and the main emitter electrode of the IGBT tube exceeds a preset threshold value, reducing the grid electrode voltage of the IGBT tube by using a short-circuit protection unit of the IGBT tube protection circuit.
The technical scheme of the invention is explained in detail above with reference to the accompanying drawings, and it is considered that in the related art, when the IGBT is in a short-circuit working condition, the device must be turned off within a specified short-circuit time, and it is also necessary to avoid an excessively high short-circuit peak current of the IGBT, so how to effectively limit the gate voltage when the IGBT is in a short-circuit, so as to prevent the IGBT from failing to become an increasingly important problem. The invention provides an IGBT tube protection circuit, an IGBT tube protection method, an IGBT circuit and IGBT equipment. The IGBT short circuit suppression circuit has the advantages that the peak current of the IGBT tube during short circuit can be effectively suppressed, the IGBT short circuit suppression circuit is particularly suitable for the second-class short circuit working condition and the third-class short circuit working condition of the IGBT tube, and the whole circuit design is simple and practical and easy to achieve.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. An IGBT tube protection circuit, comprising:
and the short-circuit protection unit is connected between the grid electrode and the main emitter of the IGBT tube and is used for reducing the grid voltage of the IGBT tube when the voltage between the grid electrode and the main emitter of the IGBT tube exceeds a preset threshold value.
2. The IGBT tube protection circuit according to claim 1, wherein the short circuit protection unit comprises:
and the cathode of the unidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the anode of the unidirectional transient suppression diode is connected with the main emitter of the IGBT tube.
3. The IGBT tube protection circuit according to claim 1, wherein the short circuit protection unit comprises:
and one end of the bidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the other end of the bidirectional transient suppression diode is connected with the main emitter electrode of the IGBT tube.
4. The IGBT tube protection circuit according to claim 1, further comprising:
and the voltage detection unit is used for detecting the voltage between the grid electrode and the main emitter of the IGBT tube.
5. An IGBT circuit, comprising:
an IGBT tube; and
the IGBT tube protection circuit comprises a short-circuit protection unit, wherein the short-circuit protection unit is connected between a grid electrode and a main emitter of the IGBT tube and used for reducing the grid voltage of the IGBT tube when the voltage between the grid electrode and the main emitter of the IGBT tube exceeds a preset threshold value.
6. The IGBT circuit according to claim 5, wherein the short-circuit protection unit comprises:
and the cathode of the unidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the anode of the unidirectional transient suppression diode is connected with the main emitter of the IGBT tube.
7. The IGBT circuit according to claim 5, wherein the short-circuit protection unit comprises:
and one end of the bidirectional transient suppression diode is connected with the grid electrode of the IGBT tube, and the other end of the bidirectional transient suppression diode is connected with the main emitter electrode of the IGBT tube.
8. The IGBT circuit of claim 5, further comprising:
and the voltage detection unit is used for detecting the voltage between the grid electrode and the main emitter of the IGBT tube.
9. An apparatus comprising an IGBT circuit according to any one of claims 5 to 8.
10. A method for protecting an IGBT tube by using the IGBT tube protection circuit as claimed in any one of claims 1 to 4, characterized by comprising:
and when the voltage between the grid electrode and the main emitter electrode of the IGBT tube exceeds a preset threshold value, reducing the grid electrode voltage of the IGBT tube by using a short-circuit protection unit of the IGBT tube protection circuit.
CN201911056421.5A 2019-10-31 2019-10-31 IGBT tube protection circuit, method, IGBT circuit and device Pending CN112751322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911056421.5A CN112751322A (en) 2019-10-31 2019-10-31 IGBT tube protection circuit, method, IGBT circuit and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911056421.5A CN112751322A (en) 2019-10-31 2019-10-31 IGBT tube protection circuit, method, IGBT circuit and device

Publications (1)

Publication Number Publication Date
CN112751322A true CN112751322A (en) 2021-05-04

Family

ID=75645662

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911056421.5A Pending CN112751322A (en) 2019-10-31 2019-10-31 IGBT tube protection circuit, method, IGBT circuit and device

Country Status (1)

Country Link
CN (1) CN112751322A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102780474A (en) * 2012-07-20 2012-11-14 华为技术有限公司 Insulated gate bipolar transistor control circuit
CN203406604U (en) * 2013-08-08 2014-01-22 Tcl空调器(中山)有限公司 IGBT current foldback circuit and convertor assembly
CN105186847A (en) * 2015-10-16 2015-12-23 桂林电子科技大学 IGBT active clamping protection circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102780474A (en) * 2012-07-20 2012-11-14 华为技术有限公司 Insulated gate bipolar transistor control circuit
CN203406604U (en) * 2013-08-08 2014-01-22 Tcl空调器(中山)有限公司 IGBT current foldback circuit and convertor assembly
CN105186847A (en) * 2015-10-16 2015-12-23 桂林电子科技大学 IGBT active clamping protection circuit

Similar Documents

Publication Publication Date Title
CN203406604U (en) IGBT current foldback circuit and convertor assembly
CN109698611B (en) Multi-stage grid voltage reduction type SiC-MOSFET drive circuit
CN113676029B (en) Active clamp circuit based on IGBT
US8937823B2 (en) Circuit and method for protecting a controllable power switch
CN111600461A (en) Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method
WO2019207977A1 (en) Gate drive circuit and gate drive method
CN111404411A (en) Three-level active driving circuit for inhibiting crosstalk
CN109861505B (en) IGBT driving circuit topological structure suitable for high-speed frequency converter
JP5542719B2 (en) Drive protection circuit for power semiconductor device
CN109995350B (en) Drive stage short-circuit protection device and protection method of power field effect transistor
CN105449644A (en) Protective circuit with IGBT valve banks connected in series
CN202772560U (en) IGBT current foldback circuit and inductive load control circuit
CN111736053B (en) Circuit and method for detecting overvoltage breakdown characteristic of IGBT
CN111224536B (en) Driving device of anti-Miller effect power module and electronic equipment
CN211981740U (en) IGBT active clamping circuit
CN112751322A (en) IGBT tube protection circuit, method, IGBT circuit and device
WO2022183699A1 (en) Gate electrode voltage passive amplitude-limiting circuit applied to igbt drive control
CN114400875A (en) Silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit, switching power supply and electronic equipment
CN113904531A (en) Power module drive circuit and air conditioner
CN108075757B (en) High-power GTO's drive control circuit
CN216774605U (en) Silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit, switching power supply and electronic equipment
CN220653203U (en) Active clamping circuit for switching tube and frequency converter
CN214674887U (en) Positive and negative power supply circuit based on IGBT single tube driving
CN221177556U (en) MOSFET isolation driving circuit based on flyback topological structure
CN216312947U (en) Power module drive circuit and air conditioner

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20210504