CN112750894A - Quasi-vertical diode - Google Patents

Quasi-vertical diode Download PDF

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Publication number
CN112750894A
CN112750894A CN202110064652.1A CN202110064652A CN112750894A CN 112750894 A CN112750894 A CN 112750894A CN 202110064652 A CN202110064652 A CN 202110064652A CN 112750894 A CN112750894 A CN 112750894A
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layer
cathode
quasi
channel layer
vertical diode
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王中旭
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Shaanxi Junpu Xinhang Technology Co ltd
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Shaanxi Junpu Xinhang Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

The invention discloses a quasi-vertical diode, comprising: a substrate layer; a buffer layer on the substrate layer; a barrier layer on the buffer layer, the barrier layer having an N-face; a channel layer on the barrier layer, the channel layer having an N-face; the first cathode, the anode and the second cathode are all located on the channel layer, the anode is located between the first cathode and the second cathode, ohmic contact is formed between the first cathode and the second cathode and between the anode and the channel layer, and Schottky contact is formed between the anode and the channel layer. The quasi-vertical diode provided by the invention is provided with the N-face barrier layer and the channel layer, the barrier layer is arranged below the 2DEG, so that a natural back barrier can be formed, the 2DEG is limited at an interface, and simultaneously, as the first cathode and the second cathode are directly contacted with the channel layer with a smaller forbidden band width, ohmic contact with lower resistance and higher quality can be formed.

Description

Quasi-vertical diode
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a quasi-vertical diode.
Background
The device based on traditional semiconductor materials such as Si, GaAs and the like is limited by the properties of the materials, so that the device indexes such as power, breakdown voltage resistance and the like are difficult to improve. In recent years, a new generation of wide bandgap semiconductor material represented by group III nitride is developed rapidly, has the advantages of wide band gap, high saturated electron drift velocity, high critical breakdown field strength, high thermal conductivity and stable chemical properties, and has great development potential in the field of millimeter wave and submillimeter wave high-power electronic devices. The GaN material is taken as a typical representative of wide-bandgap semiconductor materials, is very suitable for preparing high-temperature, anti-radiation, high-working-frequency and high-power devices, is widely applied in the fields of aerospace, radar, communication and the like, and the research of the current GaN-based diode device is one of the international hotspots at present.
Generally, the heterojunction structure in the diode device of GaN is a Ga-face AlGaN/GaN structure, and due to polarization effect, a two-dimensional electron gas (2DEG) with extremely high face density and high mobility is formed at the AlGaN/GaN interface. Despite the advantages of Ga-face AlGaN/GaN diodes, the following disadvantages still exist: to realize the connection of the cathode and the 2DEG, the AlGaN barrier layer with larger resistance and wider forbidden band width needs to be used, the ohmic contact is difficult to form, and the quality is poorer.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a quasi-vertical diode. The technical problem to be solved by the invention is realized by the following technical scheme:
a quasi-vertical diode comprising:
a substrate layer;
a buffer layer on the substrate layer;
a barrier layer on the buffer layer, the barrier layer having an N-face;
a channel layer on the barrier layer, the channel layer having an N-face;
the first cathode, the anode and the second cathode are all located on the channel layer, the anode is located between the first cathode and the second cathode, ohmic contact is formed between the first cathode and the second cathode and between the anode and the channel layer, and Schottky contact is formed between the anode and the channel layer.
In an embodiment of the invention, the material of the substrate layer is any one of sapphire, SiC, Si and GaN.
In one embodiment of the present invention, the material of the buffer layer is at least one of GaN, AlN, AlGaN, and InGaN.
In one embodiment of the invention, the barrier layer is made of N-face AlScN, and the channel layer is made of N-face GaN.
In one embodiment of the invention, the barrier layer has a crystal orientation of N-face
Figure BDA0002903679490000021
The crystal orientation of the channel layer is N face
Figure BDA0002903679490000022
In one embodiment of the invention, the Sc composition in the barrier layer ranges from 0-55%.
In one embodiment of the invention, the materials of the first cathode and the second cathode are both Ti/Al/Ni/Au or Ti/Al/Pt/Au.
In one embodiment of the invention, the quasi-vertical diode further comprises an intervening layer located between the barrier layer and the channel layer.
In an embodiment of the present invention, the material of the insertion layer is any one of AlN, InAlN, and AlGaN.
The invention has the beneficial effects that:
the quasi-vertical diode provided by the invention is provided with the N-face barrier layer and the channel layer, the barrier layer is arranged below the 2DEG, so that a natural back barrier can be formed, the 2DEG is limited at an interface, and simultaneously, as the first cathode and the second cathode are directly contacted with the channel layer with a smaller forbidden band width, ohmic contact with lower resistance and higher quality can be formed.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a quasi-vertical diode according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another quasi-vertical diode according to an embodiment of the present invention.
Description of reference numerals:
a substrate layer-10; a buffer layer-20; a barrier layer-30; a channel layer-40; a first cathode-50; an anode-60; a second cathode-70; an intervening layer-80.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a quasi-vertical diode according to an embodiment of the present invention. The present embodiment provides a quasi-vertical diode, which includes a substrate layer 10, a buffer layer 20, a barrier layer 30, a channel layer 40, a first cathode 50, an anode 60, and a second cathode 70, wherein the buffer layer 20 is located on the substrate layer 10, the barrier layer 30 is located on the buffer layer 20, the barrier layer 30 has N-planes, the channel layer 40 is located on the barrier layer 30, the channel layer 40 has N-planes, the first cathode 50, the anode 60, and the second cathode 70 are all located on the channel layer 40, the anode 60 is located between the first cathode 50 and the second cathode 70, ohmic contacts are formed between the first cathode 50 and the second cathode 70 and the channel layer 40, and schottky contacts are formed between the anode and the channel layer.
The quasi-vertical diode of the embodiment has an N-face barrier layer and a channel layer, the barrier layer is below the 2DEG, so a natural back barrier can be formed, the 2DEG is limited at the interface, and simultaneously, as the first cathode and the second cathode are directly contacted with the channel layer with a smaller forbidden band width, ohmic contact with lower resistance and higher quality can be formed.
Further, the material of the substrate layer 10 may be any one of sapphire, SiC, Si, and GaN.
Further, the buffer layer 20 may be made of any one of GaN, AlN, AlGaN, and InGaN, or may be made of several kinds of GaN, AlN, AlGaN, and InGaN.
Further, the barrier layer 30 is made of N-plane ScAlN, and the channel layer 40 is N-plane GaN.
At present, for a diode device in the prior art, because the wave function of the 2DEG is easily affected by an external electric field and moves towards the substrate direction, the scattering effect of the 2DEG is enhanced, the mobility is reduced, and the device performance is deteriorated.
Firstly, as the present embodiment adopts ScAlN as the material of the barrier layer 30, because ScAlN not only has a higher polarization constant but also can be well matched with the GaN lattice, the present embodiment can greatly increase the 2DEG density while effectively reducing the material defects, secondly, as the N-plane GaN/ScAlN is adopted, the barrier layer 30 is below the 2DEG, so that a natural back barrier can be formed, thereby limiting the 2DEG at the interface, and meanwhile, as the first cathode 50 and the second cathode 70 are directly in contact with the channel layer made of GaN material with a smaller band gap, an ohmic contact with a lower resistance and a higher quality can be formed. In addition, the quasi-vertical diode of the present embodiment can be grown on a non-GaN self-supporting substrate, such as sapphire or silicon, so that the production cost can be reduced. In addition, the quasi-vertical diode of the embodiment adopts the ScAlN as the barrier layer, so that the current density can be effectively improved, the defect density of the device can be reduced, and the reliability of the device can be greatly improved.
Further, the barrier layer 30 has an N-plane crystal orientation
Figure BDA0002903679490000051
The crystal orientation of the channel layer 40 is N-plane
Figure BDA0002903679490000052
Further, the Sc composition in the barrier layer 30 ranges from 0 to 55%.
When the Sc composition range in the barrier layer 30 is 0-55%, the barrier layer 30 made of the material of the ScAlN may have better lattice matching with the channel layer 40 made of the material of the GaN, so that defects of the device may be effectively reduced, performance degradation of the device may be avoided, reliability of the device may be improved, and the density of the 2DEG may be improved.
Preferably, the Sc composition in the barrier layer 30 is 18%, and when the material of the barrier layer 30 in the high electron mobility transistor of the present embodiment is ScAlN and the Sc composition is 18%, the lattice of the barrier layer 30 made of ScAlN may be completely matched with the lattice of the channel layer 40 made of GaN, so that the 2DEG density may be greatly increased while the material defects may be effectively reduced, and the 2DEG density may be increased by more than 3 times when the Sc composition is 18%.
Further, the first cathode 50 and the second cathode 70 are made of Ti/Al/Ni/Au or Ti/Al/Pt/Au, where Ti/Al/Ni/Au means that the first layer is Ti, the second layer is Al, the third layer is Ni, and the fourth layer is Au from bottom to top, and Ti/Al/Pt/Au means that the first layer is Ti, the second layer is Al, the third layer is Pt, and the fourth layer is Au from bottom to top.
Preferably, the thickness of Ti/Al/Ni/Au is 22/140/55/45nm, i.e. the first layer of material Ti is 22nm, the second layer of material Al is 140nm, the third layer of material Ni is 55nm and the fourth layer of material Au is 45 nm.
Preferably, the thickness of Ti/Al/Pt/Au is 22/140/55/45nm, i.e. the first layer of material Ti is 22nm, the second layer of material Al is 140nm, the third layer of material Pt is 55nm and the fourth layer of material Au is 45 nm.
The first cathode 50 and the second cathode 70 of the present embodiment are both located on the channel layer 40 made of GaN, so that the first cathode 50 and the second cathode 70 can be directly contacted with the channel layer made of GaN with smaller forbidden bandwidth, which can form ohmic contact with lower resistance and higher quality.
Further, the anode 60 is made of any one of Ni/Au, Pt/Au, and Pd/Au, where Ni/Au represents that the first layer is Ni and the second layer is Au from bottom to top, Pt/Au represents that the first layer is Pt and the second layer is Au from bottom to top, and Pd/Au represents that the first layer is Pd and the second layer is Au from bottom to top.
Further, the thickness of the anode 60 is in the range of 120-300 nm.
The anode 60 of the high electron mobility transistor of the present embodiment forms a schottky contact with the channel layer 40.
In an embodiment, referring to fig. 2, fig. 2 is a schematic structural diagram of another quasi-vertical diode provided in the embodiment of the present invention, and the quasi-vertical diode of the embodiment may further include an insertion layer 80, where the insertion layer 80 is located between the barrier layer 30 and the channel layer 40. The present embodiment can effectively improve the carrier mobility by adding an insertion layer 80 between the barrier layer 30 and the channel layer 40.
The material of the insertion layer 80 may be any one of AlN, InAlN, and AlGaN, and the insertion layer 80 may be another material, which is not particularly limited in this embodiment.
Firstly, as the present embodiment adopts ScAlN as the material of the barrier layer 30, because ScAlN not only has a higher polarization constant but also can be well matched with the GaN lattice, the present embodiment can greatly increase the 2DEG density while effectively reducing the material defects, secondly, as the N-plane GaN/ScAlN is adopted, the barrier layer 30 is below the 2DEG, so that a natural back barrier can be formed, thereby limiting the 2DEG at the interface, and meanwhile, as the first cathode 50 and the second cathode 70 are directly in contact with the channel layer made of GaN material with a smaller band gap, an ohmic contact with a lower resistance and a higher quality can be formed. In addition, the quasi-vertical diode of the present embodiment can be grown on a non-GaN self-supporting substrate, such as sapphire or silicon, so that the production cost can be reduced. In addition, the quasi-vertical diode of the embodiment adopts the ScAlN as the barrier layer, so that the current density can be effectively improved, the defect density of the device can be reduced, and the reliability of the device can be greatly improved.
When the Sc composition range in the barrier layer 30 of this embodiment is 0 to 55%, the barrier layer 30 made of ScAlN may have better lattice matching with the channel layer 40 made of GaN, so that the defects of the device may be effectively reduced, the performance degradation of the device may be avoided, the reliability of the device may be improved, and the density of the 2DEG may be improved. Particularly, when the Sc composition in the barrier layer 30 is 18%, the barrier layer 30 made of the material of the ScAlN may be completely matched with the lattice of the channel layer 40 made of the material of the GaN, so that not only may material defects be effectively reduced, but also the 2DEG density may be increased by more than 3 times.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic data point described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A quasi-vertical diode, comprising:
a substrate layer;
a buffer layer on the substrate layer;
a barrier layer on the buffer layer, the barrier layer having an N-face;
a channel layer on the barrier layer, the channel layer having an N-face;
the first cathode, the anode and the second cathode are all located on the channel layer, the anode is located between the first cathode and the second cathode, ohmic contact is formed between the first cathode and the second cathode and between the anode and the channel layer, and Schottky contact is formed between the anode and the channel layer.
2. The quasi-vertical diode of claim 1, wherein the material of the substrate layer is any one of sapphire, SiC, Si, and GaN.
3. The quasi-vertical diode of claim 1, wherein the buffer layer is made of at least one of GaN, AlN, AlGaN, and InGaN.
4. The quasi-vertical diode of claim 1, wherein the barrier layer is N-plane AlScN and the channel layer is N-plane GaN.
5. The quasi-vertical diode of claim 4, wherein the barrier layers have an N-plane crystal orientation
Figure FDA0002903679480000011
The crystal orientation of the channel layer is N face
Figure FDA0002903679480000012
6. The quasi-vertical diode of claim 4, wherein the Sc composition in the barrier layer is in the range of 0-55%.
7. The quasi-vertical diode of claim 1, wherein the first cathode and the second cathode are both Ti/Al/Ni/Au or Ti/Al/Pt/Au.
8. The quasi-vertical diode of claim 1, wherein the anode is made of any one of Ni/Au, Pt/Au, and Pd/Au, and schottky contact is formed between the anode and the channel layer.
9. The quasi-vertical diode of claim 1, further comprising an intervening layer between the barrier layer and channel layer.
10. The quasi-vertical diode of claim 9, wherein the material of the insertion layer is any one of AlN, InAlN, and AlGaN.
CN202110064652.1A 2021-01-18 2021-01-18 Quasi-vertical diode Pending CN112750894A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113964192A (en) * 2021-09-06 2022-01-21 西安电子科技大学 Non-polar GaN-based Schottky diode and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113964192A (en) * 2021-09-06 2022-01-21 西安电子科技大学 Non-polar GaN-based Schottky diode and preparation method thereof

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