CN112750719A - Silicon wafer surface cleaning device and method - Google Patents
Silicon wafer surface cleaning device and method Download PDFInfo
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- CN112750719A CN112750719A CN201911056655.XA CN201911056655A CN112750719A CN 112750719 A CN112750719 A CN 112750719A CN 201911056655 A CN201911056655 A CN 201911056655A CN 112750719 A CN112750719 A CN 112750719A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 175
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 175
- 239000010703 silicon Substances 0.000 title claims abstract description 175
- 238000004140 cleaning Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 219
- 238000001179 sorption measurement Methods 0.000 claims abstract description 53
- 238000000605 extraction Methods 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims description 22
- 239000007924 injection Substances 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 230000000087 stabilizing effect Effects 0.000 description 8
- 238000001459 lithography Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a silicon wafer surface cleaning device and a silicon wafer surface cleaning method. The device includes: comprises a liquid drop external interface, a liquid drop adsorption tank body, an intermediate connecting piece, a positive pressure air nozzle body and a positive pressure external interface; the first end of the liquid drop external interface is connected with the liquid drop extraction end of the liquid drop adsorption tank body and is used for extracting liquid drops in the liquid drop adsorption tank body; one side of the liquid drop adsorption tank body, which faces the back of the silicon wafer to be subjected to liquid removal, is provided with a liquid drop collection opening; the liquid drop adsorption tank body is used for collecting liquid drops on the back side of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening; the positive pressure air jet port body is connected with the liquid drop adsorption tank body through the intermediate connecting piece, and the intermediate connecting piece is connected with the positive pressure air jet port body to form an air jet opening towards one side of the back surface of the liquid silicon wafer to be removed. The device can clear away silicon chip surface raffinate, guarantees the stability in the silicon chip transmission process, ensures the quality of silicon chip.
Description
Technical Field
The embodiment of the invention relates to the field of semiconductor chip manufacturing, in particular to a silicon wafer surface cleaning device and a silicon wafer surface cleaning method.
Background
The silicon chip transmission subsystem is a main subsystem of the photoetching machine and is mainly responsible for transmitting a silicon chip coated with photoresist in a chip library or a photoresist evening developing machine into a workpiece table for exposure treatment and then conveying the treated silicon chip to a specified position. In immersion lithography equipment, the upper surface of a silicon wafer is covered by immersion liquid when the silicon wafer is in normal production on a workpiece stage, so that the exposed silicon wafer needs to be cleaned.
The mechanism for removing the immersion liquid on the upper surface of the silicon wafer, which is currently used on a workpiece table of an immersion type photoetching equipment, is to remove the liquid on the upper surface of the silicon wafer by forming a sealed pressure gradient in the liquid through gas. However, at the same time, droplets may remain on the edge portion of the back surface of the silicon wafer. In the process of conveying the silicon wafer, when the wafer fork is continuously close to the silicon wafer, residual liquid can be attached to the wafer fork, the surface of the wafer fork or a sucking disc of the wafer fork is polluted, and the conveying of the silicon wafer is influenced; meanwhile, the residual liquid remained for a long time in a large range volatilizes slowly, and the stability of the temperature stabilizing unit is influenced when the residual liquid volatilizes, so that the quality of the silicon wafer is influenced.
Disclosure of Invention
In order to solve the problems, the invention provides a silicon wafer surface cleaning device which can be used for removing residual liquid on the surface of a silicon wafer, ensuring the stability of the silicon wafer in the conveying process and ensuring the quality of the silicon wafer.
In a first aspect, an embodiment of the present invention provides an apparatus for cleaning a surface of a silicon wafer, where the apparatus includes:
the liquid drop external interface, the liquid drop adsorption tank body, the middle connecting piece, the positive pressure air nozzle body and the positive pressure external interface;
the first end of the liquid drop external interface is connected with the liquid drop extraction end of the liquid drop adsorption tank body, and the second end of the liquid drop external interface is connected with the negative pressure gas pipeline and used for extracting the liquid drops in the liquid drop adsorption tank body to the negative pressure gas pipeline;
one side of the liquid drop adsorption tank body, which faces the back of the silicon wafer to be subjected to liquid removal, is provided with a liquid drop collection opening; the liquid drop adsorption tank body is used for collecting liquid drops on the back side of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening;
the positive pressure air jet port body is connected with the liquid drop adsorption tank body through the middle connecting piece, and an air jet opening is formed at the connecting position of the middle connecting piece and the positive pressure air jet port body on one side facing to the back surface of the silicon wafer to be subjected to liquid removal; the first end of the positive pressure external interface is connected with the air inlet end of the positive pressure air jet port body, the second end of the positive pressure external interface is connected with a positive pressure gas pipeline, and the positive pressure gas pipeline is used for providing jet gas for the positive pressure air jet port body;
the positive pressure air jet body is used for jetting air to the back of the silicon wafer to be subjected to liquid removal through the air jet opening so as to enable liquid drops on the back of the silicon wafer to be subjected to liquid removal to be converged to the corresponding position of the liquid drop collecting opening.
Optionally, the air injection opening is an air injection slit, and the width of the air injection slit is 0.05mm-0.2 mm.
Optionally, the air injection slit comprises a first sub-slit, a second sub-slit and a third sub-slit, a first end of the first sub-slit is connected to a first end of the second sub-slit, and a second end of the second sub-slit is connected to a first end of the third sub-slit;
the first sub-slit and the third sub-slit are mirror-symmetric with respect to the second sub-slit;
the second sub-slit is parallel to the extension direction of the droplet collection opening;
the midpoint of one side of the droplet collection opening, which is adjacent to the second sub-slit, or the point of the droplet collection opening, which is adjacent to the second sub-slit, is perpendicular to the connecting line of the first end of the second sub-slit and the first sub-slit; the midpoint of one side of the droplet collection opening, which is adjacent to the second sub-slit, or the point of the droplet collection opening, which is adjacent to the second sub-slit, is perpendicular to the connecting line of the second end of the second sub-slit and the third sub-slit.
Optionally, the length of the first sub-slit and the length of the third sub-slit are both B, and B is 0.3 to 0.5 times the length a of the second sub-slit.
Optionally, the distance C between the second sub-slit and the droplet collection opening satisfies:
wherein α is an angle between a connecting line between a midpoint of one side of the droplet collection opening adjacent to the second sub-slit or a point of the droplet collection opening adjacent to the second sub-slit and the first end of the second sub-slit, and a connecting line between a midpoint of one side of the droplet collection opening adjacent to the second sub-slit or a point of the droplet collection opening adjacent to the second sub-slit and the second end of the second sub-slit, and a is a length of the second sub-slit.
Optionally, α is 90 ° or more and 95 ° or less.
Optionally, two ends of the droplet collecting opening are arc-shaped, the length D of the droplet collecting opening is 0.5-0.9 times of the length a of the second sub-slit, and the width K of the droplet collecting opening is 2mm-4 mm.
Optionally, the droplet collection opening comprises a plurality of circular droplet collection openings arranged to form a circular profile; the diameter R of the circular profile is less than or equal to 0.5 times the length A of the second sub-slit.
Optionally, the diameter r of the circular droplet collection opening is 0.5mm to 1mm, and the distance between adjacent circular droplet collection openings is 1mm to 1.5 mm.
Optionally, the apparatus further comprises a console, wherein the console comprises a lifting table and a rotating table;
the lifting platform is connected with the rotating platform; one end of the rotating table, which is far away from the lifting table, is used for placing the silicon wafer to be subjected to liquid removal; the lifting platform is used for controlling the silicon wafer to be subjected to liquid removal to lift, and the rotating platform is used for controlling the silicon wafer to be subjected to liquid removal to rotate.
In a second aspect, the embodiments of the present application provide a silicon wafer surface cleaning method, which is applicable to any one of the silicon wafer surface cleaning apparatuses provided in the first aspect, and the method includes: placing the silicon wafer to be subjected to liquid removal on one side of the liquid drop adsorption tank body close to the air jet opening;
negative pressure gas is provided for the liquid drop adsorption tank body through the liquid drop external interface, and positive pressure gas is provided for the positive pressure gas jet port body through the positive pressure external interface;
the positive pressure air jet body jets air to the back of the silicon wafer to be subjected to liquid removal through the air jet opening, so that liquid drops on the back of the silicon wafer to be subjected to liquid removal are converged to the corresponding position of the liquid drop collecting opening; the liquid drop adsorption groove body collects liquid drops on the back of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening;
and rotating the silicon wafer to be subjected to liquid removal for a circle around the center.
In the silicon wafer surface cleaning device provided by the embodiment of the application, the first end of the positive pressure external interface is connected with the air inlet end of the positive pressure air nozzle body, the second end of the positive pressure external interface is connected with the positive pressure gas pipeline, and positive pressure gas enters the positive pressure air nozzle body through the positive pressure external interface; a gas injection opening is formed at the connecting position of the positive pressure gas injection port body and the middle connecting piece at one side facing the back of the silicon wafer to be subjected to liquid removal, and positive pressure gas in the positive pressure gas injection port body injects gas to the back of the silicon wafer to be subjected to liquid removal through the paint spraying opening; the middle connecting piece is connected with the liquid drop adsorption tank body, one side of the liquid drop adsorption tank body, which faces the back of the silicon wafer to be subjected to liquid removal, is provided with a liquid drop collection opening, and the liquid drop adsorption tank body collects liquid drops on the back of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening; the liquid drop extraction end of the liquid drop adsorption tank body is connected with the first end of the liquid drop external interface, the second end of the liquid drop external interface is connected with the negative pressure gas pipeline, and liquid drops in the liquid drop adsorption tank body are extracted from the liquid drop adsorption tank body through negative pressure gas. Under the combined action of the gravity of the liquid drops and the internal suction force of the liquid drop adsorption tank body, the liquid drops are sucked into the liquid drop adsorption tank body, and then flow out through the liquid drop external interface along with the negative pressure gas. Therefore, the device can remove the residual liquid on the surface of the silicon wafer, ensure the stability of the silicon wafer in the transmission process and ensure the quality of the silicon wafer.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for cleaning a surface of a silicon wafer according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of the internal structure of the silicon wafer surface cleaning apparatus shown in FIG. 1;
FIG. 3 is a schematic structural diagram of a lithography machine according to an embodiment of the present disclosure;
fig. 4 is a schematic flowchart of the operation of a silicon wafer transmission system according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of an air injection opening according to an embodiment of the present disclosure;
FIG. 6 is a schematic view of a droplet collection opening according to an embodiment of the present disclosure;
FIG. 7 is a schematic structural diagram of another silicon wafer surface cleaning apparatus according to an embodiment of the present application;
fig. 8 is a schematic flow chart of a method for cleaning a silicon wafer surface according to an embodiment of the present disclosure.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be further noted that, for the convenience of description, only some of the structures related to the present application are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a silicon wafer surface cleaning apparatus according to an embodiment of the present disclosure. As shown in fig. 1, the apparatus 100 includes: a droplet external interface 110, a droplet adsorption tank body 120, an intermediate connecting member 130, a positive pressure air jet port body 140 and a positive pressure external interface 150;
a first end of the droplet external interface 110 is connected with a droplet extraction end of the droplet adsorption tank body 120, and a second end of the droplet external interface 110 is connected with a negative pressure gas pipeline for extracting droplets in the droplet adsorption tank body 120 to the negative pressure gas pipeline;
a liquid drop collecting opening 121 is formed in one side, facing the back of the silicon wafer to be subjected to liquid removal, of the liquid drop adsorption tank body 120; the liquid drop adsorption tank body 120 is used for collecting liquid drops on the back of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening 121;
the positive pressure air jet port body 140 is connected with the liquid drop adsorption tank body 120 through the middle connecting piece 130, and an air jet opening 141 is formed at the connecting position of the middle connecting piece 130 and the positive pressure air jet port body 140 on one side facing to the back of the silicon wafer to be subjected to liquid removal; a first end of the positive pressure external interface 150 is connected with an air inlet end of the positive pressure air nozzle body 140, a second end of the positive pressure external interface 150 is connected with a positive pressure gas pipeline, and the positive pressure gas pipeline is used for providing jet gas for the positive pressure air nozzle body 140;
the positive pressure air injection port body 140 is used for injecting air to the back of the silicon wafer to be subjected to liquid removal through the air injection opening 141 so as to enable liquid drops on the back of the silicon wafer to be subjected to liquid removal to be converged to the corresponding position of the liquid drop collection opening 121.
FIG. 2 is a schematic view of the internal structure of the silicon wafer surface cleaning apparatus shown in FIG. 1. As shown in fig. 2, the silicon wafer 210 to be subjected to liquid removal is positioned above the apparatus, negative pressure gas with pressure P2 is introduced into the droplet extracting end 122 of the droplet adsorbing groove body 120, and the width of the droplet collecting opening 121 is K; and introducing positive pressure gas with the pressure of P1 into the gas inlet end 142 of the positive pressure gas nozzle body 140, wherein the width of the gas nozzle opening 141 is L, the distance between the silicon wafer 210 to be subjected to liquid removal and the device is G, and the distance between the liquid droplet collecting opening 121 and the gas nozzle opening 141 is C.
Aiming at the same silicon wafer surface cleaning device, namely under the condition that C is fixed, the pressure P1 of positive pressure gas introduced into the gas inlet end 142, the pressure P2 of negative pressure gas introduced into the liquid drop extraction end 122 and the distance G between the silicon wafer 210 to be subjected to liquid removal and the device are adjustable, and the three process parameters influence the performance of the silicon wafer surface cleaning device. Illustratively, to ensure a compact device, C is chosen to be 8mm, and the effects of P1, P2, and G on the performance of the silicon wafer surface cleaning device are shown in Table 1.
TABLE 1 Effect of three Process parameters on the Performance of a silicon wafer surface cleaning apparatus
To ensure that the air ejection opening 141 effectively blows the liquid droplets 220 while avoiding the liquid droplets 220 from being blown off, a control constraint on the positive pressure P1 is required. As can be seen from table 1, P1 ═ 0.5bar is the most suitable positive pressure, under which the droplets 220 on the silicon wafer 210 to be removed are pushed by the gas in the direction perpendicular to the direction in which the gas ejection openings 141 extend, and gradually coalesce into large droplets at the position directly above the droplet collection openings 121, and finally detach from the back surface of the silicon wafer 210 to be removed under the action of gravity and the negative pressure gas flow, enter the attachment tank body 120 through the droplet collection openings 121, and then the droplets 220 flow out from the droplet extraction end 122 of the droplet adsorption tank body 120 along with the negative pressure gas, so as to achieve the purpose of removing the residual liquid on the surface of the silicon wafer. After the wafer 210 to be subjected to liquid removal rotates for one circle on the device, the liquid drops 220 on the whole edge area of the wafer 210 to be subjected to liquid removal are removed. With P1 unchanged, the collection point of droplets 220 remains within a small area.
When P1 is 0, the amount of droplets at the position directly above the droplet collection opening 121 does not change, and the droplets 220 do not come off the back surface of the liquid removal silicon wafer 210. G is adjusted until the droplet collection opening 121 contacts the droplet 220, and the droplet 220 is not sucked in. This shows that the smaller the G, the more obvious the collecting effect of the droplet adsorbing groove body 120 is on the premise of not affecting the position of the liquid to be removed silicon wafer 210, especially when G is 2mm, the best effect is obtained, and when G is greater than 3mm, the silicon wafer surface cleaning device has substantially no ability to remove the droplets 220 on the back surface of the liquid to be removed silicon wafer 210.
On the premise that the position of the silicon wafer 210 to be subjected to liquid removal is not affected, the larger the pressure P2 of the negative pressure gas of the silicon wafer surface cleaning device is, the more easily the liquid droplets are adsorbed to the liquid droplet adsorption tank body 120, and the best effect is obtained when P2 is-0.8 bar.
In the photoetching machine, a silicon wafer transmission system is mainly responsible for transmitting a silicon wafer coated with photoresist in a wafer library or a photoresist evening developing machine into a workbench for exposure treatment, and then transmitting the treated silicon wafer to a specified position. Fig. 3 is a schematic structural diagram of a lithography machine according to an embodiment of the present application. As shown in FIG. 3, the lithography machine includes a wafer transfer system 310, a lithography machine stage system 360, and a track developer 370;
the silicon wafer transmission system comprises a lower manipulator module 321, an upper manipulator module 322, an alignment module 330, a left matching library module 340 and a chassis module 350;
the alignment module 330 includes a pre-alignment unit 331 and a storage unit 332; the alignment module 330 is used for pre-aligning the silicon wafer and adjusting the position and posture of the silicon wafer so that the silicon wafer alignment device captures the silicon wafer mark; the pre-alignment unit 331 is used for centering, orienting and stabilizing the temperature of the silicon wafer, wherein the function of stabilizing the temperature of the silicon wafer is realized by the temperature stabilizing unit in the pre-alignment unit 331; the memory unit 332 is used for silicon chip storage.
Fig. 4 is a schematic flowchart of the operation of a silicon wafer transmission system according to an embodiment of the present application. As shown in fig. 4, the specific steps include:
410, conveying the silicon wafer to a storage unit for temporary storage by a spin coating developing machine;
420, the lower manipulator module transfers the silicon wafer temporarily stored in the storage unit to a pre-alignment unit;
430, the pre-alignment unit is used for stabilizing the temperature and pre-aligning the silicon wafer;
440, the upper robot module transfers the silicon wafer from the pre-alignment unit to the lithography machine stage system for exposure;
450, the lower manipulator module downloads the exposed silicon wafer from the workbench system of the photoetching machine and transmits the silicon wafer to the storage unit;
460, the spin-coating developing machine transfers the silicon wafer temporarily stored in the storage unit to the interior of the spin-coating developing machine for storage.
The immersion lithography machine needs to fill a high-refractive-index liquid between the lower surface of the last lens of the projection objective of the lithography machine and the photoresist on the silicon wafer, so that the exposed silicon wafer often has residual liquid drops in the edge area of the back surface. The silicon wafer with the liquid drops is conveyed to the storage unit by the lower mechanical arm module, so that the surface of a sheet fork on the lower mechanical arm module or a sheet fork sucker can be polluted, even when the lower mechanical arm module senses that the liquid drops are on the back of the silicon wafer, the transmission action can be stopped, and the transmission function of the silicon wafer is influenced; meanwhile, when the silicon wafer with liquid drops on the back is placed on the temperature stabilizing unit in the pre-alignment unit, the liquid drops which are remained in a large range for a long time volatilize slowly, and the temperature stabilizing function of the temperature stabilizing unit is influenced during volatilization, so that the temperature of the silicon wafer is unstable, and the quality of the silicon wafer is influenced.
Therefore, the silicon wafer surface cleaning device shown in fig. 1 or fig. 2 is used in the photoetching machine shown in fig. 3, and the silicon wafer conveying system can remove liquid drops on the surface of the silicon wafer, ensure the stability of the silicon wafer in the conveying process and ensure the quality of the silicon wafer. Illustratively, the silicon wafer surface cleaning apparatus shown in fig. 1 or fig. 2 is disposed in the alignment module 330 shown in fig. 3, and after step 450, the back surface of the silicon wafer is cleaned.
In the embodiment of the application, the liquid drops on the back of the silicon wafer to be removed are converged to the position corresponding to the liquid drop collecting opening of the liquid drop adsorption tank body under the pushing of high-pressure gas sprayed from the gas spraying opening, the liquid drops are sucked into the liquid drop adsorption tank body under the combined action of the gravity of the liquid drops and the internal suction force of the liquid drop adsorption tank body, and then the liquid drops flow out through the liquid drop external interface along with the negative pressure gas. Therefore, the device can remove the residual liquid on the surface of the silicon wafer, ensure the stability of the silicon wafer in the transmission process and ensure the quality of the silicon wafer.
Alternatively, referring to fig. 1 or 2, the air injection opening 141 is an air injection slit, and the width L of the air injection slit is 0.05mm to 0.2 mm. When the width L of the structurally continuous air injection opening 141 is 0.05mm-0.2mm, the air injection opening 141 can form an air curtain to generate a directional uniform pushing effect on liquid drops. The advantages over discontinuous gas injection openings or micro-holes are evident. Preferably, L is 0.1mm, which does not consume too much positive pressure gas and can also generate a sufficiently strong gas flow.
Optionally, fig. 5 is a schematic structural diagram of an air injection opening provided in the embodiment of the present application. As shown in fig. 5, the air injection slit 510 includes a first sub-slit 511, a second sub-slit 512, and a third sub-slit 513, a first end of the first sub-slit 511 is connected to a first end of the second sub-slit 512, and a second end of the second sub-slit 512 is connected to a first end of the third sub-slit 513;
the first sub-slit 511 and the third sub-slit 513 are mirror-symmetric with respect to the second sub-slit 512;
the second sub-slit 512 is parallel to the extending direction of the droplet collecting opening 520;
the midpoint of one side of the droplet collection opening 520 adjacent to the second sub-slit 512 or the point of the droplet collection opening 520 adjacent to the second sub-slit 512 is perpendicular to the line connecting the first ends of the second sub-slit 512 and the first sub-slit 511; the midpoint of one side of the droplet collecting opening 520 adjacent to the second sub-slit 512 or the point of the droplet collecting opening 520 adjacent to the second sub-slit 512 is perpendicular to the line connecting the second ends of the second sub-slit 512 and the third sub-slit 513.
Illustratively, as shown in fig. 5, the droplet collection opening 520 extends in the y direction, the second sub-slit 512 also extends in the y direction, an included angle between a line connecting a midpoint of a side of the droplet collection opening 520 adjacent to the second sub-slit 512 and a first end of the second sub-slit 512 and a line connecting a midpoint of a side of the droplet collection opening 520 adjacent to the second sub-slit 512 and a second end of the second sub-slit 512 is α, a distance between the droplet collection opening 520 and the gas injection opening 510 is C, a length of the second sub-slit is a greater than a width of a droplet region at an edge of the silicon wafer, and a length of the droplet collection opening 520 is D.
The second sub-slit functions to generate a forward shearing force, which is difficult to generate if a is too small. The first sub-slit and the third sub-slit are used for converging liquid drops, and the symmetrical structures on the two sides ensure that the liquid drops converge in an area corresponding to the geometric center of a liquid drop collecting opening 520 on a silicon wafer to be subjected to liquid removal; the first sub-slit and the third sub-slit have a length B, the convergence effect is more obvious when the length of B is larger, and the longitudinal geometric dimension of the device structure is increased when the length of B is increased.
Optionally, the value range of B is 0.3A-0.5A. When the value range of B is 0.3A-0.5A, the size and the cleaning effect of the device can be balanced, so that the device is in a proper size range and has a good cleaning effect.
Optionally, with continued reference to FIG. 5, the spacing C of the second sub-slit 512 from the droplet collection opening 520 satisfies
The larger alpha is, the larger C is, the transverse geometrical size of the device structure is increased, and when the alpha is greater than or equal to 90 degrees and less than or equal to 95 degrees, the device size and the cleaning effect can be balanced, so that the device is in a proper size range and is better in cleaning effect.
Optionally, with continued reference to fig. 5, the ends of the droplet collection opening 520 are curved, the length D of the droplet collection opening 520 is 0.5-0.9 times the length a of the second sub-slit, and the width K of the droplet collection opening 520 is 2-4 mm.
The length D of the droplet collection opening 520 should generally be greater than the width of the droplet region at the edge of the wafer 210 to be drained, but should not exceed a, and generally ranges from 0.5A to 0.9A. When K is 2mm-4mm, the cleaning effect is better, and especially when K is 2mm, the liquid drop can be obviously observed to be extracted into the liquid drop adsorption tank body. If the droplets themselves to be cleaned are larger, the width K of the droplet collection opening 520 may be increased appropriately, and an increase in K may require a greater negative pressure P2.
Optionally, the parameters of the silicon wafer surface cleaning device are respectively: 15mm for a, 5mm for B, 8mm for C, 12mm for D and 90 °.
FIG. 6 is a schematic view of a droplet collection opening according to an embodiment of the present disclosure. As shown in fig. 6, droplet collection opening 610 includes a plurality of circular droplet collection openings 611, the plurality of circular droplet collection openings 611 being arranged to form a circular profile; the diameter R of the circular profile is equal to or less than 0.5 times the length a of the second sub-slit. With this structure, the extending direction of the second slit 512 can be any direction, the droplet collecting opening 610 can absorb droplets with a larger diameter, and the droplet collecting opening 610 can reduce the loss of the negative pressure gas compared with the structure of the droplet collecting opening 520 shown in fig. 3.
Alternatively, with continued reference to FIG. 6, the diameter r of the circular droplet collection openings 611 is between 0.5mm and 1mm and the distance between adjacent circular droplet collection openings 611 is between 1mm and 1.5 mm. In order to maximize the effect of the negative pressure gas, the diameter r of the circular droplet collecting openings 611 is 1mm, and the distance between the adjacent circular droplet collecting openings 611 is 1.5 mm.
Fig. 7 is a schematic structural diagram of another silicon wafer surface cleaning apparatus according to an embodiment of the present application. As shown in fig. 7, the cleaning apparatus includes a console 710 and a cleaning apparatus 100, the console 710 includes a lifting table 711 and a rotating table 712;
the lifting platform 711 is connected with the rotating platform 712; one end of the rotating platform 712, which is away from the lifting platform 711, is used for placing the silicon wafer 210 to be subjected to liquid removal; the lifting platform 711 is used for controlling the silicon wafer 210 to be subjected to liquid removal to lift, and the rotating platform 712 is used for controlling the silicon wafer 210 to be subjected to liquid removal to rotate.
The center of the silicon wafer 210 to be subjected to liquid removal is aligned with the center of the rotating table 512 and is adsorbed on the rotating table 712; the silicon wafer 210 to be subjected to liquid removal is adjusted to a liquid drop cleaning position through the lifting platform 711; turning on the cleaning device 100, wherein the cleaning device 100 is exemplarily a silicon wafer surface cleaning device shown in FIG. 1 or FIG. 2; positive pressure gas and negative pressure gas are introduced; the rotating platform 712 is controlled to rotate the silicon wafer 210 to be subjected to liquid removal for a circle around the center, so that the whole edge area of the back surface of the silicon wafer 210 to be subjected to liquid removal can be cleaned, and the purpose of removing residual liquid on the surface of the silicon wafer is achieved.
The silicon wafer surface cleaning device comprises the lifting table and the rotating table, and in addition, other modules in the silicon wafer transmission system can also comprise the lifting table and the rotating table, and the lifting table and the rotating table are shared by the silicon wafer surface cleaning device and the other modules so as to clean the surface of the silicon wafer.
Based on the same inventive concept, the method for cleaning a silicon wafer surface provided in this embodiment is applied to any one of the aforementioned silicon wafer surface cleaning apparatuses, and fig. 8 is a schematic flow diagram of the method for cleaning a silicon wafer surface provided in this embodiment. As shown in fig. 8, the method for cleaning the surface of the silicon wafer comprises the following steps:
810, placing the silicon wafer to be subjected to liquid removal on one side, close to the air jet opening, of the liquid drop adsorption tank body;
specifically, the center of the silicon wafer is aligned with the center of the bearing table, a vertical position adjusting device is used for exemplarily adjusting the distance G between the silicon wafer to be subjected to liquid removal and the air injection opening by using a lifting table, the value of the distance G is generally 2mm-3mm, and the cleaning effect of the surface of the silicon wafer is influenced by the size of the distance G.
820, providing negative pressure gas to the liquid drop adsorption tank body through the liquid drop external interface, and providing positive pressure gas to the positive pressure gas injection port body through the positive pressure external interface;
the first end of the liquid drop external interface is connected with the liquid drop extraction end of the liquid drop adsorption tank body, the second end of the liquid drop external interface is connected with the negative pressure gas pipeline, and liquid drops in the liquid drop adsorption tank body are extracted to the negative pressure gas pipeline through the liquid drop external interface; the first end of the positive pressure external interface is connected with the air inlet end of the positive pressure air nozzle body, the second end of the positive pressure external interface is connected with the positive pressure gas pipeline, and the positive pressure external interface provides jet gas for the positive pressure air nozzle body;
830, the positive pressure gas jet nozzle body jets gas to the back of the silicon wafer to be subjected to liquid removal through the gas jet opening, so that the liquid drops on the back of the silicon wafer to be subjected to liquid removal are converged to the corresponding position of the liquid drop collecting opening; the liquid drop adsorption groove body collects liquid drops on the back of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening;
malleation jet-propelled mouth body passes through intermediate junction spare and this body coupling of liquid drop adsorption tank, intermediate junction spare is in the orientation and treats one side formation jet-propelled opening at the liquid silicon chip back of removing with the junction of malleation jet-propelled mouth body, liquid drop adsorption tank body is provided with the liquid drop towards the one side of treating the liquid silicon chip back of removing and collects the opening, malleation jet-propelled mouth body is through jet-propelled opening to treating the jet-propelled at the liquid silicon chip back of removing, the liquid drop of treating the liquid silicon chip back of removing is under jet-propelled opening spun high-pressure gas's promotion, assemble to the position that the opening part corresponds is collected to the liquid drop of liquid drop adsorption tank body, the liquid drop is under the combined action of gravity and the internal suction of liquid drop adsorption.
840, rotating the silicon slice to be removed for one circle around the center.
The method comprises the steps of removing a cleaned area on the surface of a silicon wafer to be subjected to liquid removal from a working area by rotating the silicon wafer to be subjected to liquid removal, and sending an uncleaned area into the working area for next cleaning, so that after one rotation, the whole surface of the silicon wafer to be subjected to liquid removal is cleaned. Preferably, the direction of movement of the area that has been cleaned is the side that is remote from the droplet collection opening, so that when cleaning the adjacent area of the area that has been cleaned, no secondary contamination of the area that has been cleaned is caused.
The silicon wafer surface cleaning method provided by the embodiment of the invention is suitable for any one of the silicon wafer surface cleaning devices, has the same or corresponding beneficial effects as the silicon wafer surface cleaning device suitable for the silicon wafer surface cleaning device, and is not repeated here.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (11)
1. A silicon wafer surface cleaning device is characterized by comprising a liquid drop external interface, a liquid drop adsorption groove body, an intermediate connecting piece, a positive pressure air jet port body and a positive pressure external interface;
the first end of the liquid drop external interface is connected with the liquid drop extraction end of the liquid drop adsorption tank body, and the second end of the liquid drop external interface is connected with the negative pressure gas pipeline and used for extracting the liquid drops in the liquid drop adsorption tank body to the negative pressure gas pipeline;
one side of the liquid drop adsorption tank body, which faces the back of the silicon wafer to be subjected to liquid removal, is provided with a liquid drop collection opening; the liquid drop adsorption tank body is used for collecting liquid drops on the back side of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening;
the positive pressure air jet port body is connected with the liquid drop adsorption tank body through the middle connecting piece, and an air jet opening is formed at the connecting position of the middle connecting piece and the positive pressure air jet port body on one side facing to the back surface of the silicon wafer to be subjected to liquid removal; the first end of the positive pressure external interface is connected with the air inlet end of the positive pressure air jet port body, the second end of the positive pressure external interface is connected with a positive pressure gas pipeline, and the positive pressure gas pipeline is used for providing jet gas for the positive pressure air jet port body;
the positive pressure air jet body is used for jetting air to the back of the silicon wafer to be subjected to liquid removal through the air jet opening so as to enable liquid drops on the back of the silicon wafer to be subjected to liquid removal to be converged to the corresponding position of the liquid drop collecting opening.
2. The apparatus of claim 1, wherein the air jet opening is an air jet slit having a width of 0.05mm to 0.2 mm.
3. The apparatus of claim 2, wherein the gas injection slit comprises a first sub-slit, a second sub-slit, and a third sub-slit, a first end of the first sub-slit being connected to a first end of the second sub-slit, a second end of the second sub-slit being connected to a first end of the third sub-slit;
the first sub-slit and the third sub-slit are mirror-symmetric with respect to the second sub-slit;
the second sub-slit is parallel to the extension direction of the droplet collection opening;
the midpoint of one side of the droplet collection opening, which is adjacent to the second sub-slit, or the point of the droplet collection opening, which is adjacent to the second sub-slit, is perpendicular to the connecting line of the first end of the second sub-slit and the first sub-slit; the midpoint of one side of the droplet collection opening, which is adjacent to the second sub-slit, or the point of the droplet collection opening, which is adjacent to the second sub-slit, is perpendicular to the connecting line of the second end of the second sub-slit and the third sub-slit.
4. The apparatus of claim 3, wherein the length of the first sub-slit and the length of the third sub-slit are both B, and B is 0.3-0.5 times the length A of the second sub-slit.
5. The device of claim 3, wherein the second sub-slit has a spacing C from the droplet collection opening that satisfies:
wherein α is an angle between a connecting line between a midpoint of one side of the droplet collection opening adjacent to the second sub-slit or a point of the droplet collection opening adjacent to the second sub-slit and the first end of the second sub-slit, and a connecting line between a midpoint of one side of the droplet collection opening adjacent to the second sub-slit or a point of the droplet collection opening adjacent to the second sub-slit and the second end of the second sub-slit, and a is a length of the second sub-slit.
6. The device of claim 5, wherein α is greater than or equal to 90 ° and less than or equal to 95 °.
7. The device of claim 3, wherein both ends of the droplet collecting opening are arc-shaped, the length D of the droplet collecting opening is 0.5-0.9 times the length A of the second sub-slit, and the width K of the droplet collecting opening is 2-4 mm.
8. The device of claim 3, wherein the droplet collection opening comprises a plurality of circular droplet collection openings arranged to form a circular profile; the diameter R of the circular profile is less than or equal to 0.5 times the length A of the second sub-slit.
9. The device of claim 8, wherein the diameter r of the circular droplet collection opening is between 0.5mm and 1mm and the distance between adjacent circular droplet collection openings is between 1mm and 1.5 mm.
10. The apparatus of claim 1, further comprising a console comprising a lift table and a rotation table;
the lifting platform is connected with the rotating platform; one end of the rotating table, which is far away from the lifting table, is used for placing the silicon wafer to be subjected to liquid removal; the lifting platform is used for controlling the silicon wafer to be subjected to liquid removal to lift, and the rotating platform is used for controlling the silicon wafer to be subjected to liquid removal to rotate.
11. A method for cleaning a surface of a silicon wafer, which is applied to the apparatus according to any one of claims 1 to 10, wherein the method for cleaning a surface of a silicon wafer comprises:
placing the silicon wafer to be subjected to liquid removal on one side of the liquid drop adsorption tank body close to the air jet opening;
negative pressure gas is provided for the liquid drop adsorption tank body through the liquid drop external interface, and positive pressure gas is provided for the positive pressure gas jet port body through the positive pressure external interface;
the positive pressure air jet body jets air to the back of the silicon wafer to be subjected to liquid removal through the air jet opening, so that liquid drops on the back of the silicon wafer to be subjected to liquid removal are converged to the corresponding position of the liquid drop collecting opening; the liquid drop adsorption groove body collects liquid drops on the back of the silicon wafer to be subjected to liquid removal through the liquid drop collection opening;
and rotating the silicon wafer to be subjected to liquid removal for a circle around the center.
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| CN113634556A (en) * | 2021-08-10 | 2021-11-12 | 叶建蓉 | Silicon chip surface removes liquid clean-up equipment |
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