CN112748474A - Efficient infrared detector structure - Google Patents
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- CN112748474A CN112748474A CN202011623551.5A CN202011623551A CN112748474A CN 112748474 A CN112748474 A CN 112748474A CN 202011623551 A CN202011623551 A CN 202011623551A CN 112748474 A CN112748474 A CN 112748474A
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- 230000004044 response Effects 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 17
- 238000003491 array Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
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- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 8
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- 239000000758 substrate Substances 0.000 description 7
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- 230000008569 process Effects 0.000 description 4
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- 230000008878 coupling Effects 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 2
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- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
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- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
Abstract
The invention provides a high-efficiency infrared detector structure.A reflection cavity is formed by adjacent supporting walls, a reflection structure and an infrared frequency band selection structure; infrared rays enter the reflecting cavity from the opening and are reflected to the infrared frequency band selection structure through the reflecting structure; the infrared frequency band selection structure selectively absorbs infrared rays with specific wavelengths, outputs infrared response signals, improves the energy absorption efficiency of the infrared rays with the specific wavelengths, and further improves the sensitivity of the infrared detector.
Description
Technical Field
The present invention relates to the field of semiconductor optical devices, and more particularly, to a highly efficient infrared detector structure.
Background
The current detection technology is limited by the response frequency band and the response sensitivity of the detector, particularly, in the infrared and far infrared frequency bands containing numerous biological characteristic spectrums, the frequency range which can be covered by the detector is limited, the fundamental reason is that the response frequency band of the current detector corresponds to the inherent transition energy band width of the detector material, through the current energy band engineering, the design flexibility of the energy band width is greatly improved, but the infrared frequency band can not be well covered, and the energy band design through the transition between sub-bands often needs extremely harsh implementation conditions due to the existence of the thermal effect, such as the low-temperature vacuum state of the detector. At present, detectors of infrared/far infrared frequency bands are mainly realized by two technologies, one is that the detectors are optical downward, mainly follow solid-state device technologies such as visible light, near infrared and the like, and realize the detectors of corresponding frequency bands based on semiconductor energy band engineering, but the detectors have the limitations of low temperature and high cost; the other type of technology mainly realizes signal detection of corresponding frequency bands through electronics technology, namely based on a traditional millimeter wave/microwave device, through frequency multiplication and combination of a coherent technology, and the technology also has the defects of high cost, unstable system and large volume, and is difficult to be practical.
Research has shown that the electromagnetic wave detection technology based on resonance induction effect, which appears in recent years, is a potential mode for solving the above problems. Based on the above, the infrared detector adopting the composite structure is provided, on one hand, a special structure is designed to respond to a target frequency band signal to realize a frequency band customization function, and on the other hand, a feedback coupling cavity is adopted to enhance the signal absorption efficiency and improve the response sensitivity so as to comprehensively improve the performance of the solid-state infrared detector.
Disclosure of Invention
The present invention aims to overcome the above-mentioned defects in the prior art, and provides a high-efficiency infrared detector structure, which includes:
a reflective structure;
a plurality of support walls positioned on the reflective structure;
the infrared frequency band selection structure is positioned on the supporting wall and is suspended to cover the reflection structure, and the infrared frequency band selection structure is provided with a plurality of openings; wherein the content of the first and second substances,
a reflective cavity is formed adjacent to the supporting wall, the reflective structure and the infrared frequency band selection structure; infrared rays enter the reflecting cavity from the opening and are reflected to the infrared frequency band selection structure through the reflecting structure; the infrared frequency band selection structure selectively absorbs infrared rays with specific wavelengths and outputs infrared response signals.
Preferably, the support walls are arranged in parallel along a first direction; the infrared frequency band selection structure comprises a plurality of infrared frequency band arrays, the infrared frequency band arrays are arranged on the support wall respectively and are arranged in parallel along a first direction, adjacent infrared frequency band arrays are connected through end parts to form the opening, and the opening is provided with an opening width perpendicular to the first direction; and the end part of the infrared frequency band array on the outermost side is led out to be used as an output end of the infrared response signal.
Preferably, the head end and the tail end of the adjacent infrared band arrays are connected to form an S-shaped series connection, and the opening width is proportional to the specific wavelength.
Preferably, the width of the opening is proportional to the specific wavelength by 2-10 times; the infrared frequency band array comprises a plurality of frequency selection units, wherein the frequency selection units are periodically arranged in a two-dimensional plane direction and are provided with geometric figures.
Preferably, the opening width is 4 μm; the arrangement period of the frequency selection units is 2000 nm; the geometric figure comprises one or more combinations of annular shapes, cross shapes and raster-like shapes.
Preferably, the geometric figure is a cross, the cross has a cross width perpendicular to the first direction and a cross length parallel to the first direction, the cross width is 400nm, and the cross length is 800nm to 1700 nm.
Preferably, the frequency selection unit includes a first dielectric layer, a second dielectric layer and a metal layer arranged from bottom to top.
Preferably, the material of the first dielectric layer comprises a heavily doped silicon material; the material of the second dielectric layer comprises silicon oxide; the material of the metal layer comprises one or two of Ti and Al.
Preferably, the thickness of the first dielectric layer is 75 nm-135 nm; the thickness of the second dielectric layer is 40 nm-60 nm; the metal layer is of a double-layer structure, the double-layer structure comprises an Al layer and a Ti layer from bottom to top, the thickness of the Al layer is 60 nm-120 nm, and the thickness of the Ti layer is 18 nm-22 nm.
Preferably, the reflective cavity has a cavity height, the cavity height being a perpendicular distance between the reflective structure surface and the bottom surface of the infrared band selection structure, the cavity height being an even multiple of a half wavelength of the specific wavelength.
The invention forms a reflection cavity by adjacent supporting walls, a reflection structure and an infrared frequency band selection structure; infrared rays enter the reflecting cavity from the opening and are reflected to the infrared frequency band selection structure through the reflecting structure; the infrared frequency band selection structure selectively absorbs infrared rays with specific wavelengths, outputs infrared response signals, improves the energy absorption efficiency of the infrared rays with the specific wavelengths, further improves the sensitivity of the infrared detector, and has remarkable significance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a high-efficiency infrared detector according to an embodiment of the present invention
FIG. 2 is a schematic top view of a high efficiency infrared detector configuration according to an embodiment of the present invention
FIG. 3 is a schematic top view of an enlarged portion of an IR band array of an IR detector configuration according to an embodiment of the invention
FIG. 4 is a schematic top view of a frequency selection unit of an efficient infrared detector structure according to an embodiment of the present invention
FIG. 5 is a schematic cross-sectional view of a frequency selection unit of a high-efficiency infrared detector structure according to an embodiment of the present invention
FIG. 6 is a response spectrum diagram of an efficient IR detector configuration according to an embodiment of the invention
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In some instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the invention.
According to the main idea of the invention, the high-efficiency infrared detector structure of the invention comprises: a reflective structure; a plurality of support walls positioned on the reflective structure; the infrared frequency band selection structure is positioned on the supporting wall and is suspended to cover the reflection structure, and the infrared frequency band selection structure is provided with a plurality of openings; wherein a reflective cavity is formed adjacent to the supporting wall, the reflective structure and the infrared band selection structure; infrared rays enter the reflecting cavity from the opening and are reflected by the reflecting structure; the infrared frequency band selection structure absorbs the reflected infrared rays and outputs an infrared response signal.
The technical contents of the present invention will be further described with reference to the accompanying drawings and examples.
Referring to fig. 1, a cross-sectional view of a high-efficiency infrared detector structure according to an embodiment of the present invention is shown, wherein a reflective cavity is formed adjacent to the supporting wall 110, the reflective structure 100 and the infrared band selecting structure 120.
The reflective structure 100 may include a substrate and a metal reflective layer on the surface of the substrate, where the metal reflective layer has a high reflection and a low transmission for infrared rays, and ensures that the infrared rays are reflected multiple times in the reflective cavity, thereby improving the energy absorption efficiency of the infrared band selection structure 120 for the infrared rays. The reflective structure 100 may also be a metallic reflective substrate.
The supporting walls 110 are arranged in parallel on the surface of the reflection structure 100 along a first direction, the supporting walls 110 serve as supports for the infrared band selection structure 120, and the infrared band selection structure 120 with a suspended bottom is erected on the supporting walls 110.
The infrared frequency band selection structure 120 is used for selecting an infrared frequency band, the infrared frequency band selection structure 120 includes a plurality of infrared frequency band arrays, and the infrared frequency band arrays are respectively arranged on the support wall 110 and are arranged in parallel along a first direction; the adjacent infrared frequency band arrays are connected through end parts and form the opening. In this embodiment, the opening has an opening width perpendicular to the first direction, the opening width is proportional to the specific wavelength, specifically, the opening width is proportional to 2-10 times of a central wavelength of the infrared ray with the specific wavelength, and in this embodiment, the opening width is 4 μm.
In this embodiment, the infrared band selecting structure 120 includes a substrate, the infrared band array is located on the substrate, and a reflective cavity is formed between the substrate of the infrared band selecting structure 120 and the reflecting structure 100 by an etching technique. Specifically, the bottom of the substrate of the infrared band selection structure 120 is etched through the opening between the adjacent infrared band arrays, so as to form the reflective cavity.
The openings serve as inlets for infrared rays to enter the reflective cavity, and in this embodiment, adjacent infrared band arrays are connected by end portions and form the openings. The opening may also be formed between the frequency selection cells within the infrared frequency band array. The opening size of the opening is proportional to the central wavelength of the infrared rays.
Infrared rays enter the reflective cavity through the opening, and then are reflected and scattered by the reflective structure 100 and the supporting wall 100, and the infrared band selection structure 129 absorbs infrared rays with specific wavelengths and outputs an infrared response signal. The energy conversion efficiency of the infrared rays with the specific wavelength which are reflected and scattered for multiple times is improved, and the sensitivity of the high-efficiency infrared detector structure is further improved.
The reflective cavity has a cavity height, the cavity height being a vertical distance between the reflective structure surface and the infrared band selection structure bottom surface, the cavity height being an even multiple of a half wavelength of the specific wavelength.
In order to make the objects, technical solutions and advantages of the present invention more clear, the following is further described with reference to fig. 2 to 5.
Referring to fig. 2, fig. 2 is a schematic top view of a high-efficiency infrared detector according to an embodiment of the present invention. The head end and the tail end of the adjacent infrared frequency band arrays are connected to form S-shaped series connection, and the end part of the infrared frequency band array at the outermost side is led out to be used as an output end of the infrared response signal. The infrared frequency band array comprises a plurality of frequency selection units, wherein the frequency selection units are periodically arranged in a two-dimensional plane direction and are provided with geometric figures. The geometric figure comprises one or more combinations of annular shapes, cross shapes and raster-like shapes, and in the embodiment, the cross shapes are taken as an example for illustration.
Fig. 3 is a partially enlarged top view schematic diagram of an infrared band array of a high efficiency infrared detector configuration according to an embodiment of the present invention. As shown in fig. 3, the frequency selection unit is equivalent to an open-loop oscillator, and the capacitance C and the inductance L of the open-loop oscillator are adjusted by the size and the structural design of the frequency selection unit, and the resonant frequency f0Is proportional to 1/(LC)1/2Thereby realizing a resonance frequency f0The infrared rays of different frequency bands are selected by customization.
As a preferred embodiment, the arrangement period of the frequency selection units is 2000 nm. The frequency selection unit is often called as ERR (electronic ring oscillator), the ERR is in contact with the electromagnetic wave signal, and completes the energy absorption of the electromagnetic wave signal by generating a resonance effect with the electromagnetic wave of a specific frequency/segment, after the energy is absorbed, the ERR or the temperature of the material adjacent to the ERR changes, then the electrical parameter of the material changes, and finally the electromagnetic wave is characterized by detecting the response electric signal.
Fig. 4 is a schematic top view of a frequency selection unit of a high-efficiency infrared detector structure according to an embodiment of the present invention. As shown in fig. 4, the geometric figure of the frequency selection unit is a cross shape having a cross width S perpendicular to the first direction2And a cross length S parallel to said first direction1The width of the cross is 400nm, and the length of the cross is 800 nm-1700 nm.
Fig. 5 is a schematic cross-sectional view of a frequency selection unit of a high-efficiency infrared detector structure according to an embodiment of the present invention. As shown in fig. 5, the frequency selection unit includes a first dielectric layer, a second dielectric layer and a metal layer arranged from bottom to top. The metal layer on the top layer is used for coupling incident electric field signals, and the first medium layer and the second medium layer are used for coupling incident signal magnetic field signals. Realizing the resonance frequency f by the structure of the frequency selection unit and the thickness of the second medium layer0The customization function of (1):
f0∝1/(LC)1/2
wherein f is0Is the resonant frequency, L is the inductance, and C is the capacitance.
The capacitor C is mainly determined by the area of the frequency selection unit and the thickness of the second dielectric layer; the area, the inductance L and the cross width S of the frequency selection unit2And cross length S1Correlation, so by adjusting the structural parameter S of the frequency selection unit2And S1Thereby realizing the absorption of the infrared ray with specific wavelength and further customizing the resonance frequency of the infrared ray.
The material of the frequency selection unit may be determined according to a specific process, such as metal material Al, silicon dioxide, etc. used in a conventional CMOS process, or material such as vanadium oxide, etc. used in an infrared MEMS process. The material of the first dielectric layer comprises a heavily doped silicon material; the material of the second dielectric layer comprises silicon oxide; the material of the metal layer comprises one or two of Ti and Al.
Specifically, in this embodiment, the first dielectric layer is made of a heavily doped silicon material, and the thickness of the first dielectric layer is 75nm to 135 nm; the material of the second dielectric layer comprises silicon oxide, and the thickness of the second dielectric layer is 40 nm-60 nm; the metal layer is of a double-layer structure, the double-layer structure comprises an Al layer and a Ti layer from bottom to top, the thickness of the Al layer is 60 nm-120 nm, and the thickness of the Ti layer is 18 nm-22 nm.
Fig. 6 shows a response spectrum diagram of a highly efficient infrared detector configuration according to an embodiment of the present invention. As shown in FIG. 6, response spectrum results were obtained by finite element method simulation with a cross length S1The detector simulated response frequency changes accordingly, in this embodiment, the cross length is equal to the cross width, and the center response frequency is 4um, which is consistent with the initial design.
In summary, the reflective cavity is formed by the supporting wall, the reflective structure and the infrared band selection structure which are adjacent to each other; infrared rays enter the reflection cavity from the opening and are reflected to the infrared frequency band selection structure through the reflection structure, so that the energy absorption efficiency of the infrared rays with specific wavelengths is improved, and the sensitivity of the infrared detector is further improved; and the infrared frequency band selection structure absorbs infrared rays with specific wavelengths, so that the electrical characteristics are changed, and an infrared response signal is output. The invention improves the performance of the solid infrared detector by combining the frequency customization characteristics of the metamaterial and the microcavity process technology, promotes the development of the solid infrared detector to the practical direction of cheapness, normal temperature and easy integration, and has obvious significance.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An efficient infrared detector structure, comprising:
a reflective structure;
a plurality of support walls positioned on the reflective structure;
the infrared frequency band selection structure is positioned on the supporting wall and is suspended to cover the reflection structure, and the infrared frequency band selection structure is provided with a plurality of openings; wherein the content of the first and second substances,
a reflective cavity is formed adjacent to the supporting wall, the reflective structure and the infrared frequency band selection structure; infrared rays enter the reflecting cavity from the opening and are reflected to the infrared frequency band selection structure through the reflecting structure; the infrared frequency band selection structure selectively absorbs infrared rays with specific wavelengths and outputs infrared response signals.
2. The high efficiency infrared detector structure of claim 1, wherein said support walls are arranged in parallel along a first direction; the infrared frequency band selection structure comprises a plurality of infrared frequency band arrays, the infrared frequency band arrays are arranged on the support wall respectively and are arranged in parallel along a first direction, adjacent infrared frequency band arrays are connected through end parts to form the opening, and the opening is provided with an opening width perpendicular to the first direction; and the end part of the infrared frequency band array on the outermost side is led out to be used as an output end of the infrared response signal.
3. A high efficiency infrared detector structure as in claim 2, wherein the ends of adjacent said infrared band arrays are connected to form an S-shaped series, said opening width being proportional to said specific wavelength.
4. A high efficiency infrared detector structure as in claim 3, wherein said opening width is proportional to 2-10 times said specific wavelength; the infrared frequency band array comprises a plurality of frequency selection units, wherein the frequency selection units are periodically arranged in a two-dimensional plane direction and are provided with geometric figures.
5. The efficient infrared detector structure of claim 4, wherein said opening width is 4 μm; the arrangement period of the frequency selection units is 2000 nm; the geometric figure comprises one or more combinations of annular shapes, cross shapes and raster-like shapes.
6. The efficient infrared detector structure of claim 5, wherein said geometric figure is a cross shape having a cross width perpendicular to said first direction and a cross length parallel to said first direction, said cross width being 400nm and said cross length being 800nm to 1700 nm.
7. The efficient infrared detector structure of claim 4, wherein said frequency selection unit comprises a first dielectric layer, a second dielectric layer and a metal layer arranged from bottom to top.
8. The efficient infrared detector structure of claim 7, wherein the material of the first dielectric layer comprises a heavily doped silicon material; the material of the second dielectric layer comprises silicon oxide; the material of the metal layer comprises one or two of Ti and Al.
9. The efficient infrared detector structure of claim 7, wherein said first dielectric layer is 75nm to 135nm thick; the thickness of the second dielectric layer is 40 nm-60 nm; the metal layer is of a double-layer structure, the double-layer structure comprises an Al layer and a Ti layer from bottom to top, the thickness of the Al layer is 60 nm-120 nm, and the thickness of the Ti layer is 18 nm-22 nm.
10. The high efficiency infrared detector structure of claim 1 wherein said reflective cavity has a cavity height, said cavity height being the perpendicular distance of the reflective structure surface from the bottom surface of said infrared band selection structure, said cavity height being an even multiple of a half wavelength of said specific wavelength.
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