CN110311290B - Terahertz multi-frequency linear frequency converter based on photosensitive silicon - Google Patents
Terahertz multi-frequency linear frequency converter based on photosensitive silicon Download PDFInfo
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- CN110311290B CN110311290B CN201910645299.9A CN201910645299A CN110311290B CN 110311290 B CN110311290 B CN 110311290B CN 201910645299 A CN201910645299 A CN 201910645299A CN 110311290 B CN110311290 B CN 110311290B
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Abstract
The invention discloses a terahertz multi-frequency linear frequency converter based on photosensitive silicon. The metal structure in one unit is composed of four groups of concentric opening annular resonance rings, photosensitive silicon is loaded in each group of concentric opening annular resonance ring structure, different eigenmodes can be obtained under the action of different laser powers, switching between the eigenmodes is achieved, and linear frequency gain is obtained. The multi-frequency terahertz wave frequency linear converter based on photosensitive silicon provided by the embodiment of the invention is combined with an optical pumping system, can realize effective gain of four-frequency terahertz waves, has a simple structure and a mature manufacturing process, and has an important application prospect in a plurality of fields such as terahertz source devices, terahertz communication and the like.
Description
Technical Field
The invention relates to the technical field of terahertz communication and imaging, in particular to a terahertz multi-frequency linear frequency converter based on photosensitive silicon.
Background
The Terahertz (THz) technology has a great application prospect in a plurality of fields such as medical imaging, sensing detection, security inspection anti-terrorism, high-speed wireless communication and the like, and is an internationally recognized research frontier field. In recent years, although the research of terahertz technology has made great progress, broadband and efficient terahertz sources and frequency modulation devices are still very deficient, and the development of the terahertz frequency modulation devices becomes a critical problem to be solved urgently in the terahertz field at present.
The conversion efficiency of linear frequency conversion does not depend on the intensity of a converted signal, and compared with nonlinear frequency conversion, the method has obvious advantages, can realize effective frequency conversion of low-intensity terahertz waves, can realize phase conversion within a 2 pi range while linearly converting the frequency, and is expected to realize a novel phase sensitive device with high sensitivity. The existing terahertz linear frequency conversion can only realize the conversion of single frequency, and the multi-frequency conversion has important application requirements in the research of functional devices such as terahertz sources, terahertz modulators and the like.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides a terahertz multi-frequency linear frequency converter based on photosensitive silicon, which solves the problem that the conventional terahertz linear frequency conversion can only realize conversion of single frequency, and realizes the linear frequency conversion of four frequencies by utilizing four groups of open annular resonance rings; the device can be applied to a plurality of technical fields including terahertz modulators.
The invention is realized by the following technical scheme:
a terahertz multi-frequency linear frequency converter based on photosensitive silicon comprises a medium substrate, four groups of metal structures and photosensitive semiconductors, wherein the four groups of metal structures and the photosensitive semiconductors are attached to the surface of one side of the medium substrate, the four groups of metal structures are distributed on the medium substrate without intersecting and overlapping, the four groups of metal structures are metal concentric open resonance rings with the same shape and different sizes, and the opening sizes and the opening directions of the concentric open resonance rings of the metal structures are the same; each group of metal structures comprises two metal concentric resonance rings with the same shape and different sizes, a photosensitive semiconductor is arranged between the two resonance rings, and the photosensitive semiconductor is provided with an opening with the same shape and size as each group of metal structures; the photosensitive semiconductors loaded in the four groups of metal structures obtain different eigenmodes under the action of different laser powers, so that the switching between the eigenmodes is realized, and linear frequency gain is obtained.
Furthermore, the four groups of metal structures are metal concentric open-ended resonance rings with the same shape and different sizes, and the resonance rings are annular resonance rings;
the metal structure comprises a first group of metal structures, a second group of metal structures, a third group of metal structures and a fourth group of metal structures, the first group of metal structures comprise a first resonant ring and a second resonant ring, and a first photosensitive semiconductor is arranged between the first resonant ring and the second resonant ring; the second group of metal structures comprise a third resonant ring and a fourth resonant ring, and a second photosensitive semiconductor is arranged between the third resonant ring and the fourth resonant ring; the third group of metal structures comprises a fifth resonant ring and a sixth resonant ring, and a third photosensitive semiconductor is arranged between the fifth resonant ring and the sixth resonant ring; the fourth group of metal structures comprises a seventh resonant ring and an eighth resonant ring, and a fourth photosensitive semiconductor is arranged between the seventh resonant ring and the eighth resonant ring.
Further, the widths of the first resonance ring, the second resonance ring, the third resonance ring, the fourth resonance ring, the fifth opening, the sixth resonance ring, the seventh resonance ring and the eighth resonance ring are all 3 μm, and the outer radii are 44.5 μm, 30 μm, 37.5 μm, 26.5 μm, 30 μm, 22.5 μm, 26.5 μm and 20 μm respectively;
the openings of the concentric opening resonance rings of each group of metal structures are the same in size, the sizes of the openings are all 10 micrometers, and the central symmetry line of the openings penetrates through the circle center and is along the x axis;
the sides of the unit of four sets of metal structures were 260 μm.
Further, the four groups of metal structures are metal concentric open-ended resonant rings with the same shape and different sizes, and the resonant rings are square resonant rings.
Further, the dielectric substrate is a sapphire substrate, the dielectric constant of the sapphire substrate is 12.94, and the thickness of the sapphire substrate is 470 microns.
Furthermore, each group of metal structure is made of metal gold, and the conductivity of the metal structure is 4.56 × 107S/m, thickness 200 nm.
Further, the photosensitive semiconductor is photosensitive silicon or semi-doped GaAs photosensitive semiconductor.
The photosensitive semiconductor adopts photosensitive silicon as a preferred scheme, the thickness of the photosensitive silicon is 500nm, and the dielectric constant is 11.9; the size of the opening is 10 mu m, and the central symmetry line of the opening passes through the circle center along the x axis;
the photosensitive semiconductor is photosensitive silicon, the photosensitive silicon obtains excitation of 100mW pump light in a light pumping terahertz detection system, the conductivity of the photosensitive silicon is 25S/m when no pump excitation exists, and the conductivity of the photosensitive silicon is 5 × 10 under the excitation of 100mW3S/m。
The terahertz multi-frequency linear frequency converter based on the photosensitive silicon is required to be realized in an optically pumped terahertz detection system (OPTP). when no pump excitation is added, the conductivity of the photosensitive silicon is 25S/m, and the conductivity is 5 × 10 under the excitation of 100mW3S/m; in the OPTP, when the pumping light reaches the terahertz multi-frequency linear frequency converter based on the photosensitive silicon, the multi-frequency linear frequency conversion is realized by adjusting the time when the pumping light reaches the terahertz multi-frequency linear frequency converter based on the photosensitive silicon.
The invention has the following advantages and beneficial effects:
1. the invention can realize the linear frequency conversion of four terahertz signals simultaneously or respectively, including the linear conversion of 0.4THz and 0.6THz to 0.49THz, the linear conversion of 0.47THz and 0.68THz to 0.58THz, the linear conversion of 0.56THz and 0.79THz to 0.71THz, and the linear conversion of 0.65THz and 0.9THz to 0.81 THz;
2. compared with the traditional nonlinear frequency conversion, the linear frequency conversion realized by adopting the mode fusion method has the advantages that the conversion efficiency does not depend on the intensity of an incident signal, and the frequency modulation of a weak signal is obviously superior;
3. the linear frequency conversion realized by adopting the mode fusion method is smaller in terahertz waveband loss and has the advantage of obvious conversion efficiency compared with the nonlinear frequency conversion realized by adopting a nonlinear device;
4. the metal layer adopts a geometric configuration of a concentric split ring, so that the processing is simpler, the process is mature, the manufacturing cost is low, and the integration is easy.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
fig. 1 is a front view of one unit of a terahertz multi-frequency linear frequency converter based on photosensitive silicon according to the present invention.
Fig. 2 is a sectional view taken along the line a-a of fig. 1 according to the present invention.
Fig. 3 shows transmittance of four fusion modes at different moments of change of the conductivity of the photosensitive silicon in the embodiment of the present invention.
FIG. 4 shows the transmittance of different frequencies at 0.00581ns according to an embodiment of the present invention.
Reference numbers and corresponding part names in the drawings:
1-dielectric substrate, 2-first resonant ring, 3-first photosensitive semiconductor, 4-second resonant ring, 5-third resonant ring, 6-second photosensitive semiconductor, 7-fourth resonant ring, 8-fifth resonant ring, 9-third photosensitive semiconductor, 10-sixth resonant ring, 11-seventh resonant ring, 12-fourth photosensitive semiconductor, 13-eighth resonant ring.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Examples
As shown in fig. 1 to 4, a terahertz multi-frequency linear frequency converter based on photosensitive silicon comprises a dielectric substrate 1, and further comprises four groups of metal structures and photosensitive semiconductors, wherein the four groups of metal structures and photosensitive semiconductors are all attached to one side surface of the dielectric substrate 1, the four groups of metal structures are distributed on the dielectric substrate 1 without intersecting and overlapping, the four groups of metal structures are concentric open-ended metal resonance rings with the same shape and different sizes, and the concentric open-ended metal resonance rings of each group of metal structures have the same opening size and the same opening direction; each group of metal structures comprises two metal concentric resonance rings with the same shape and different sizes, a photosensitive semiconductor is arranged between the two resonance rings, and the photosensitive semiconductor is provided with an opening with the same shape and size as each group of metal structures; the photosensitive semiconductors loaded in the four groups of metal structures can obtain different eigenmodes under the action of different laser powers, so that the switching between the eigenmodes is realized, and linear frequency gain is obtained.
The four groups of metal structures are metal concentric open-ended resonance rings with the same shape and different sizes, and the resonance rings are annular resonance rings; the metal structure comprises a first group of metal structures, a second group of metal structures, a third group of metal structures and a fourth group of metal structures, the first group of metal structures comprise a first resonant ring 2 and a second resonant ring 4, and a first photosensitive semiconductor 3 is arranged between the first resonant ring 2 and the second resonant ring 4; the second group of metal structures comprises a third resonant ring 5 and a fourth resonant ring 7, and a second photosensitive semiconductor 6 is arranged between the third resonant ring 5 and the fourth resonant ring 7; the third group of metal structures comprises a fifth resonant ring 8 and a sixth resonant ring 10, and a third photosensitive semiconductor 9 is arranged between the fifth resonant ring 8 and the sixth resonant ring 10; the fourth group of metal structures comprises a seventh resonant ring 11 and an eighth resonant ring 13, and a fourth photosensitive semiconductor 12 is arranged between the seventh resonant ring 11 and the eighth resonant ring 13.
In this embodiment, the dielectric substrate 1 is a sapphire substrate, and has a dielectric constant of 12.94, a thickness of 470 μm and a period length of 260 μm.
The widths of the first resonant ring 2, the second resonant ring 4, the third resonant ring 5, the fourth resonant ring 7, the fifth resonant ring 8, the sixth resonant ring 10, the seventh resonant ring 11 and the eighth resonant ring 13 are all 3 micrometers, and the outer radii are 44.5 micrometers, 30 micrometers, 37.5 micrometers, 26.5 micrometers, 30 micrometers, 22.5 micrometers, 26.5 micrometers and 20 micrometers respectively;
the opening sizes of the concentric opening resonance rings of each group of metal structures are the same, and the opening sizes are all 10 micrometers;
the side length of a unit formed by four groups of metal structures is 260 mu m;
the first photosensitive semiconductor 3, the second photosensitive semiconductor 6, the third photosensitive semiconductor 9 and the fourth photosensitive semiconductor 12 have openings with the same shape and size as those of each group of metal structures, and the gaps of the openings are all 10 micrometers.
The metal structure of each group is made of metal gold, and the conductivity of the metal structure is 4.56 × 107S/m, thickness 200 nm.
The photosensitive semiconductor is photosensitive silicon, the thickness of the photosensitive silicon is 500nm, the dielectric constant is 11.9, when the photosensitive semiconductor is photosensitive silicon, the photosensitive silicon obtains the excitation of 100mW pump light in a light pumping terahertz detection system, the conductivity of the photosensitive silicon is 25S/m when no pump excitation is performed, and the conductivity is 5 × 10 under the excitation of 100mW3S/m, namely the electrical conductivity of the photosensitive silicon is 25S/m and 5 × 10 under the pump light of 0mW and 100mW respectively3S/m。
In the optically pumped terahertz detection system, when no pumping light is applied, the conductivity of the photosensitive silicon (the first photosensitive semiconductor 3, the second photosensitive semiconductor 6, the third photosensitive semiconductor 9 and the fourth photosensitive semiconductor 12) is 25S/m, the coupling form of the terahertz waves and the converter is mainly based on the resonance mode of each open ring resonator, and the total number of the resonance peaks is eight, and the resonance frequencies are 0.40THz, 0.60THz, 0.47THz, 0.68THz, 0.56THz, 0.79THz, 0.65THz and 0.90THz, which correspond to the first resonance ring 2, the second resonance ring 4, the third resonance ring 5, the fourth resonance ring 7, the fifth resonance ring 8, the sixth resonance ring 10, the seventh resonance ring 11 and the eighth resonance ring 13 in the open ring resonators, respectively.
When 100mW of pumping light is applied, the conductivity of the photosensitive silicon is improved to 5 × 10 from 25S/m3S/m, each pair of concentric split ring resonators is fused into a coupling mode of a split ring resonator from the original two resonance modes, and the corresponding four resonance frequencies are 0.49THz, 0.58THz, 0.71THz and 0.81THz respectively.
At the moment of occurrence of pump light, the photosensitive silicon is changed from a low conductivity state to a high conductivity state when the photosensitive silicon is conducted within a period of several picoseconds, each pair of concentric open ring-shaped resonance rings are fused into one open ring-shaped resonance ring, and the mode conversion enables the terahertz frequency to be linearly converted. In a microwave simulation module of Computer Simulation Technology (CST), a time domain simulation of 0.1ns is set, and with the time when the amplitude of an incident signal is maximum as a time zero point, the time when pump light reaches photosensitive silicon is simulated by setting the conductivity of silicon as a time domain step signal, so that the transmission coefficients of terahertz waves of the frequencies corresponding to four fusion modes at different conductivity mutation times are obtained as shown in fig. 3.
As can be seen from fig. 3, between 0.00523ns and 0.00668ns, the transmission coefficients of the four fusion modes are all greater than zero, the gain condition occurs, and the higher the frequency, the smaller the maximum value of the transmission coefficient is, the earlier it occurs. With the longest gain duration at 0.71THz, the gain was achieved in the range of 0.00494ns to 0.00842ns, and the transmission coefficient reached a maximum of 0.518 at time 0.00639 ns. Fig. 4 shows the transmission coefficients at different frequencies at time 0.00581ns, and the transmission coefficients at the four fusion frequencies are 0.74dB, 0.59dB, 0.56dB and 0.46dB, respectively.
Therefore, the terahertz multi-frequency linear frequency converter based on linear frequency modulation can realize effective frequency conversion on four terahertz frequencies, and the design can promote the research of terahertz transceiving ends, terahertz communication technology and imaging technology.
The multi-frequency terahertz wave frequency linear converter based on photosensitive silicon provided by the embodiment of the invention is combined with an optical pumping system, can realize effective gain of four-frequency terahertz waves, has a simple structure and a mature manufacturing process, and has an important application prospect in a plurality of fields such as terahertz source devices, terahertz communication and the like.
Example 2
As shown in fig. 1 to 4, the present embodiment is different from embodiment 1 in that the four sets of metal structures are metal concentric open-ended resonant rings with the same shape and different sizes, and the resonant rings are square resonant rings; the photosensitive semiconductor is a semi-doped GaAs photosensitive semiconductor.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the present invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (7)
1. A terahertz multi-frequency linear frequency converter based on photosensitive silicon, comprising a dielectric substrate (1), characterized in that: the medium substrate (1) is provided with four groups of metal structures and photosensitive semiconductors, wherein the four groups of metal structures and photosensitive semiconductors are attached to one side surface of the medium substrate (1), the four groups of metal structures are distributed on the medium substrate (1) without crossing and overlapping, the four groups of metal structures are metal concentric open resonance rings with the same shape and different sizes, and the opening sizes and the opening directions of the concentric open resonance rings of the metal structures are the same;
each group of metal structures comprises two metal concentric opening resonance rings with the same shape and different sizes, a photosensitive semiconductor is arranged between the two resonance rings, and the photosensitive semiconductor is provided with an opening with the same shape and size as each group of metal structures;
the photosensitive semiconductors loaded in the four groups of metal structures obtain different eigenmodes under the action of different laser powers, so that the switching between the eigenmodes is realized, and linear frequency gain is obtained;
the four groups of metal structures are metal concentric open-ended resonance rings with the same shape and different sizes, and the resonance rings are annular resonance rings;
the metal structure comprises a first group of metal structures, a second group of metal structures, a third group of metal structures and a fourth group of metal structures, the first group of metal structures comprise a first resonance ring (2) and a second resonance ring (4), and a first photosensitive semiconductor (3) is arranged between the first resonance ring (2) and the second resonance ring (4); the second group of metal structures comprises a third resonant ring (5) and a fourth resonant ring (7), and a second photosensitive semiconductor (6) is arranged between the third resonant ring (5) and the fourth resonant ring (7); the third group of metal structures comprises a fifth resonance ring (8) and a sixth resonance ring (10), and a third photosensitive semiconductor (9) is arranged between the fifth resonance ring (8) and the sixth resonance ring (10); the fourth group of metal structures comprises a seventh resonance ring (11) and an eighth resonance ring (13), and a fourth photosensitive semiconductor (12) is arranged between the seventh resonance ring (11) and the eighth resonance ring (13);
the widths of the first resonance ring (2), the second resonance ring (4), the third resonance ring (5), the fourth resonance ring (7), the fifth resonance ring (8), the sixth resonance ring (10), the seventh resonance ring (11) and the eighth resonance ring (13) are all 3 micrometers, and the outer radiuses are respectively 44.5 micrometers, 30 micrometers, 37.5 micrometers, 26.5 micrometers, 30 micrometers, 22.5 micrometers, 26.5 micrometers and 20 micrometers;
the opening sizes of the concentric opening resonance rings of each group of metal structures are the same, and the opening sizes are all 10 micrometers;
the side length of a unit formed by four groups of metal structures is 260 mu m;
the first photosensitive semiconductor (3), the second photosensitive semiconductor (6), the third photosensitive semiconductor (9) and the fourth photosensitive semiconductor (12) are provided with openings with the same shape and size as those of each group of metal structures, and the gaps of the openings are all 10 mu m.
2. The terahertz multi-frequency linear frequency converter based on photosensitive silicon according to claim 1, wherein: the four groups of metal structures are metal concentric open-ended resonant rings with the same shape and different sizes, and the resonant rings are square resonant rings.
3. The terahertz multi-frequency linear frequency converter based on photosensitive silicon according to claim 1, wherein: the dielectric substrate (1) is a sapphire substrate, the dielectric constant of the dielectric substrate is 12.94, the thickness of the dielectric substrate is 470 microns, and the period length of the dielectric substrate is 260 microns.
4. The terahertz multi-frequency linear frequency converter based on photosensitive silicon as claimed in claim 1, wherein each group of metal structures is made of metal gold, and the conductivity of each group of metal structures is 4.56 × 107S/m, thickness 200 nm.
5. The terahertz multi-frequency linear frequency converter based on photosensitive silicon according to claim 1, wherein: the photosensitive semiconductor is photosensitive silicon or semi-doped GaAs photosensitive semiconductor.
6. The terahertz multi-frequency linear frequency converter based on photosensitive silicon according to claim 5, wherein: the photosensitive semiconductor adopts photosensitive silicon, the thickness of the photosensitive silicon is 500nm, and the dielectric constant is 11.9.
7. The terahertz multi-frequency linear frequency converter based on photosensitive silicon as claimed in claim 6, wherein the photosensitive semiconductor is photosensitive silicon which obtains 100mW pump light excitation in a light-pumped terahertz detection system, the conductivity of the photosensitive silicon is 25S/m without pump excitation, and the conductivity of the photosensitive silicon is 5 × 10 under 100mW excitation3S/m。
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