CN112737510B - Voltage-controlled oscillator, voltage-controlled oscillation processing method and electronic equipment - Google Patents
Voltage-controlled oscillator, voltage-controlled oscillation processing method and electronic equipment Download PDFInfo
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
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Abstract
The invention provides a voltage-controlled oscillator, a voltage-controlled oscillation processing method and electronic equipment, wherein the voltage-controlled oscillator comprises: the device comprises a negative resistance coupling circuit, an error feedback network, a resonant cavity and an output processing circuit; the negative resistance coupling circuit multiplexes input current, the input current is output from the output processing circuit after being processed by the resonant cavity, the error voltage is obtained from the resonant cavity by the error feedback network and is fed back to the negative resistance coupling circuit, and the threshold voltage is increased in the working process of the negative resistance coupling circuit. According to the invention, the input current is multiplexed through the negative resistance coupling circuit, the substrate voltage of the negative resistance coupling circuit is influenced by the error voltage generated by the asymmetry of the current multiplexing structure, and the threshold voltage is increased in the coupling pair conduction process, so that the current in the conduction process is reduced, and the power consumption is further reduced.
Description
Technical Field
The present invention relates to the field of voltage-controlled oscillators, and in particular, to a voltage-controlled oscillator, a voltage-controlled oscillation processing method, and an electronic device.
Background
In order to meet the development of a wireless millimeter wave communication system, designing a frequency synthesizer with low power consumption, wide bandwidth and low phase noise becomes the key of a high-performance communication system. In the design of the multi-resonant cavity VCO and the core multi-core VCO, the voltage-controlled oscillator needs to design a more complex transformer structure and a circuit layout, so that the area of the circuit is increased, and the power consumption of the circuit is increased.
At present, the method for implementing low power consumption by voltage-controlled oscillator includes using a topology structure with NMOS-PMOS as a coupling pair to reduce the working voltage of the circuit and reduce the size of the transistor, or using methods such as variable capacitance tuning, switched capacitor array and variable inductance to increase the tuning range. However, reducing the operating voltage means that a larger transistor size is required to meet the start-up conditions, which in turn limits the tuning range of the circuit, whereas reducing the transistor size alone may not meet the oscillation conditions; the switched capacitor array and the variable inductor may reduce the quality factor of the circuit to some extent, thereby increasing power consumption and impairing phase noise performance.
Thus, the prior art has yet to be improved and enhanced.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, an object of the present invention is to provide a voltage-controlled oscillator, a voltage-controlled oscillation processing method, and an electronic device, in which an input current is multiplexed by a negative resistance coupling circuit, an error voltage generated by asymmetry of a current multiplexing structure affects a substrate voltage of the negative resistance coupling circuit, and a threshold voltage is increased during a coupling pair conduction process, so that a current during conduction is reduced, and power consumption is reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a voltage-controlled oscillator, which comprises a negative resistance coupling circuit, an error feedback network, a resonant cavity and an output processing circuit, wherein the negative resistance coupling circuit is connected with the output processing circuit; the negative resistance coupling circuit multiplexes input current, the input current is output from the output processing circuit after being processed by the resonant cavity, the error voltage is obtained from the resonant cavity by the error feedback network and is fed back to the negative resistance coupling circuit, and the threshold voltage is increased in the working process of the negative resistance coupling circuit.
The negative resistance coupling circuit comprises a first transistor, a second transistor and a first resistor; the input end of the first transistor is connected with a power supply and an error feedback network, the control end of the first transistor is connected with the input end of the second transistor, the resonant cavity and the output processing circuit, the output end of the first transistor is connected with the control end of the second transistor, the resonant cavity and the output processing circuit, the output end of the second transistor is connected with one end of the first resistor, the other end of the first resistor is connected with the error feedback network and is grounded, and the substrate of the first transistor and the substrate of the second transistor are respectively connected with the error feedback network.
The error feedback network comprises a first voltage division circuit and a first bias circuit, wherein a first error voltage is extracted from the resonant cavity by the first bias circuit, and then the first error voltage is fed back to the substrate of the first transistor by the first voltage division circuit.
The error feedback network further comprises a second voltage division circuit and a second bias circuit, wherein a second error voltage is extracted from the resonant cavity by the second bias circuit, and then the second error voltage is fed back to the substrate of the second transistor by the second voltage division circuit.
The first bias circuit comprises a second resistor, and the first voltage divider circuit comprises a first capacitor and a second capacitor; one end of the second resistor is connected with a first bias voltage, the other end of the second resistor is connected with one end of the first capacitor, one end of the second capacitor and the substrate of the first transistor, the other end of the first capacitor is connected with the input end of the first transistor and a power supply, and the other end of the second capacitor is connected with the resonant cavity.
The second bias circuit comprises a third resistor, and the second voltage division circuit comprises a third capacitor and a fourth capacitor; one end of the third resistor is connected with a second bias voltage, the other end of the third resistor is connected with one end of the third capacitor, one end of the fourth capacitor and the substrate of the second transistor, the other end of the third capacitor is connected with the other end of the first resistor and is grounded, and the other end of the fourth capacitor is connected with the resonant cavity.
The resonant cavity comprises a first inductor, a first variable capacitor, a second variable capacitor and a fifth capacitor; the first end of the first inductor is connected with one end of the first variable capacitor, one end of the fifth capacitor, the output end of the output processing circuit, the output end of the first transistor and the control end of the second transistor, the second end of the first inductor is connected with one end of the second variable capacitor, the other end of the fifth capacitor, the output processing circuit, the control end of the first transistor and the input end of the second transistor, a center tap of the first inductor is connected with the error feedback network, and the other end of the first variable capacitor is connected with the other end of the second variable capacitor and outputs the output voltage.
The output processing circuit comprises a first output unit and a second output unit, wherein the first output unit outputs a first driving signal, and the second output unit outputs a second driving signal.
Based on the voltage-controlled oscillator, the invention also provides a voltage-controlled oscillation processing method, which comprises the following steps:
the negative resistance coupling circuit multiplexes input current, and the input current is output from the output processing circuit after being processed by the resonant cavity;
and an error feedback network acquires an error voltage from the resonant cavity and feeds the error voltage back to the negative resistance coupling circuit, and the threshold voltage is increased in the working process of the negative resistance coupling circuit.
Based on the voltage-controlled oscillator, the invention further provides an electronic device, which comprises a device body, wherein a circuit board is arranged in the device body, and the voltage-controlled oscillator as claimed in any one of claims 1 to 8 is arranged on the circuit board.
Compared with the prior art, the voltage-controlled oscillator, the voltage-controlled oscillation processing method and the electronic device provided by the invention are characterized in that the voltage-controlled oscillator comprises: the device comprises a negative resistance coupling circuit, an error feedback network, a resonant cavity and an output processing circuit; the negative resistance coupling circuit multiplexes input current, the input current is output from the output processing circuit after being processed by the resonant cavity, the error voltage is obtained from the resonant cavity by the error feedback network and is fed back to the negative resistance coupling circuit, and the threshold voltage is increased in the working process of the negative resistance coupling circuit. According to the invention, the input current is multiplexed through the negative resistance coupling circuit, and the threshold voltage is increased in the coupling pair conduction process by utilizing the substrate voltage of the negative resistance coupling circuit of the error voltage generated by the asymmetry of the current multiplexing structure, so that the current in the conduction process is reduced, and the power consumption is further reduced.
Drawings
Fig. 1 is a block diagram of a voltage-controlled oscillator according to the present invention;
fig. 2 is a circuit diagram of a voltage controlled oscillator provided by the present invention;
fig. 3 is an equivalent circuit diagram of a voltage controlled oscillator provided by the present invention;
FIG. 4 is a transient simulation diagram of a voltage controlled oscillator provided by the present invention;
FIG. 5 is a graph of phase noise performance of a voltage controlled oscillator provided by the present invention;
fig. 6 is a diagram of operating frequency and power consumption of a voltage-controlled oscillator according to the present invention at different tuning voltages;
FIG. 7 shows FoM and FoM corresponding to 1MHz of the voltage-controlled oscillator provided by the invention under different operating frequenciesTAnd (4) parameters.
Detailed Description
The invention provides a voltage-controlled oscillator, a voltage-controlled oscillation processing method and electronic equipment.
The embodiments of the present invention are intended to explain technical concepts of the present invention, technical problems to be solved, technical features constituting technical solutions, and technical effects to be brought about in more detail. The embodiments are explained below, but the scope of the present invention is not limited thereto. Further, the technical features of the embodiments described below may be combined with each other as long as they do not conflict with each other.
For the convenience of understanding the embodiments of the present application, relevant elements related to the embodiments of the present application will be described first.
When the existing voltage-controlled oscillator is used for realizing low power consumption, a topological structure with NMOS-PMOS as a coupling pair is adopted, the working voltage of a circuit is reduced, the size of a transistor is reduced, or the tuning range is enlarged by adopting methods such as variable capacitance tuning, switched capacitor array and variable inductance. These methods have problems of excessive transistor size, excessive power consumption, or low phase noise performance.
In view of the above problems in the prior art, referring to fig. 1, the present invention provides a voltage controlled oscillator, which includes a negative resistance coupling circuit 100, an error feedback network 200, a resonant cavity 300, and an output processing circuit 400; the negative resistance coupling circuit 100 multiplexes input current, the input current is processed by the resonant cavity 300 and then output from the output processing circuit 400, the error feedback network 200 acquires error voltage from the resonant cavity 300 and feeds the error voltage back to the negative resistance coupling circuit 100, and the threshold voltage is increased in the working process of the negative resistance coupling circuit 100. According to the invention, the input current is multiplexed through the negative resistance coupling circuit 100, the substrate voltage of the negative resistance coupling circuit 100 is influenced by the error voltage generated by the asymmetry of the current multiplexing structure, and the threshold voltage is increased in the coupling pair conduction process, so that the current in the conduction process is reduced, and the power consumption is further reduced.
Specifically, referring to fig. 2, the negative resistance coupling circuit 100 includes a first transistor MP1, a second transistor MN1, and a first resistor R1; the input end of the first transistor MP1 is connected to the power supply and error feedback network 200, the control end of the first transistor MP1 is connected to the input end of the second transistor MN1, the resonant cavity 300 and the output processing circuit 400, the output end of the first transistor MP1 is connected to the control end of the second transistor MN1, the resonant cavity 300 and the output processing circuit 400, the output end of the second transistor MN1 is connected to one end of the first resistor R1, the other end of the first resistor R1 is connected to the error feedback network 200 and grounded, and the substrate of the first transistor MP1 and the substrate of the second transistor MN1 are connected to the error feedback network 200 respectively.
Specifically, in this embodiment, the first transistor MP1 is a PMOS transistor, the second transistor MN1 is an NMOS transistor, the first transistor MP1 is turned on to make the second transistor MN1 also turned on through current multiplexing, and when the first transistor MP1 is turned off, the second transistor MN1 is turned off along with the first transistor MP1, so that the first transistor MP1 and the second transistor MN1 at two ends of the negative resistance coupling circuit 100 are turned on and off simultaneously, so that in a control cycle, only a half cycle forms a path from VDD to GND (i.e., the first transistor MP1 is turned on to make the second transistor MN1 turned on in the previous half cycle), and therefore, the current multiplexing structure formed by the negative resistance coupling circuit 100 has power consumption under the same condition that is only half or even less than that of other structures in the prior art.
Further, when the first transistor MP1 Is turned on during the previous half-cycle and the second transistor MN1 Is also turned on, a current path from VDD to GND Is formed, and the current of the path red Is 1. When the second half period Is reached, the gate of the first transistor MP1 Is turned off at a high level, so that the second transistor MN1 Is also turned off, the circuit cannot draw current from the power supply VDD, the energy stored in the resonant cavity 300 can be reused, the energy lost by the resonant cavity 300 Is compensated, and the formed current Is 2. However, at this time, due to the inequality of Is1 and Is2 and the asymmetry of the europe and the europe, the output of the circuit may be unbalanced, which includes unbalanced outputs at both ends and unbalanced single-ended signals in two preceding and following periods. In order to solve this problem, the present embodiment provides the first resistor R1 between the second transistor MN1 and GND to form a current limiting structure, thereby increasing the symmetry of the circuit and reducing the degradation of the phase noise performance due to asymmetry.
Further, with reference to fig. 2, the error feedback network 200 includes a first voltage divider circuit 210 and a first bias circuit 220, wherein the first bias circuit 220 extracts a first error voltage from the cavity 300, and then the first error voltage is fed back to the substrate of the first transistor MP1 through the first voltage divider circuit 210. The error feedback network 200 further comprises a second voltage divider circuit 230 and a second bias circuit 240, wherein the second bias circuit 240 extracts a second error voltage from the resonant cavity 300, and the second error voltage is fed back to the substrate of the second transistor MN1 through the second voltage divider circuit 230.
In specific implementation, in this embodiment, in order to increase the wide tuning range of the vco and further reduce the power consumption of the circuit, the dynamic substrate bias technique based on the error feedback network 200 improves the performance in the power consumption and the tuning range and maintains good phase noise performance. Specifically, a dc substrate bias is performed through the substrate. First, the first voltage divider 210 and the first bias circuit 220 are connected to the substrate of the first transistor MP1, and the first bias current V is switched onBPAnd extracting an error voltage from the cavity 300; meanwhile, the second voltage division circuit 230 and the second bias circuit 240 are connected with the substrate of the second transistor MN1, and the second bias current V is switched inBNAnd the error voltage is extracted from the resonant cavity 300, so as to effectively increase the transconductance value of the negative resistance coupling circuit 100, thereby allowing to arrange small-sized transistors, and the circuit can start and maintain oscillation.
According to the threshold voltage formula (1) of the second transistor MN1, V is dividedBNSet higher than GND, likewise, VBPSet lower than VDD to lower the threshold voltage of the transistor to raise the transconductance value of the circuit.
On the basis that threshold voltage change can affect the power consumption of the circuit, the error voltage generated by the asymmetry of the current multiplexing structure is utilized to affect the substrate voltages of the MP1 and the MN1, and the threshold voltage is increased in the coupling pair conduction process, so that the current during conduction is reduced, and the power consumption of the circuit can be further reduced.
Specifically, with continued reference to fig. 2, the first bias circuit 220 includes a second resistor R2, and the first voltage divider circuit 210 includes a first capacitor C1 and a second capacitor C2; one end of the second resistor R2 is connected to a first bias voltage, the other end of the second resistor R2 is connected to one end of the first capacitor C1, one end of the second capacitor C2 and the substrate of the first transistor MP1, the other end of the first capacitor C1 is connected to the input end of the first transistor MP1 and a power supply, and the other end of the second capacitor C2 is connected to the resonant cavity 300. The second bias circuit 240 includes a third resistor R3, and the second voltage divider circuit 230 includes a third capacitor C3 and a fourth capacitor C4; one end of the third resistor R3 is connected to a second bias voltage, the other end of the third resistor R3 is connected to one end of the third capacitor C3, one end of the fourth capacitor C4 and the substrate of the second transistor MN1, the other end of the third capacitor C3 is connected to the other end of the first resistor R1 and grounded, and the other end of the fourth capacitor C4 is connected to the resonant cavity 300.
In this embodiment, in a specific implementation, the error voltage of the vco is extracted from the resonant cavity 300, the first capacitor C1 and the second capacitor C2 form the first voltage divider circuit 210, the third capacitor C3 and the fourth capacitor C4 form the second voltage divider circuit 230, and two voltage dividers are formed to respectively feed back the error voltage to the substrate of the first transistor MP1 and the substrate of the second transistor MN 1. At this time, the variation of the substrate voltage is opposite to the variation of the transistor gate voltage. Therefore, as the transistor is turned on, the absolute value of the voltage difference between the substrate and the source of the transistor decreases, i.e., | V in equation (1)SBThe | decreases. So that the threshold voltage also increases and decreases with the conduction of the negative resistance coupling circuit 100The current that is conducted, thereby further reducing the power consumption of the circuit.
Specifically, with continued reference to fig. 2, the resonant cavity 300 includes a first inductor L1, a first variable capacitor Cvar1, a second variable capacitor Cvar2, and a fifth capacitor C5; a first end of the first inductor L1 is connected to one end of the first variable capacitor Cvar1, one end of the fifth capacitor C5, the output processing circuit 400, the output end of the first transistor MP1, and the control end of the second transistor MN1, a second end of the first inductor L1 is connected to one end of the second variable capacitor Cvar2, the other end of the fifth capacitor C5, the output processing circuit 400, the control end of the first transistor MP1, and the input end of the second transistor MN1, a center tap of the first inductor L1 is connected to the error feedback network 200, and the other end of the first variable capacitor Cvar1 is connected to the other end of the second variable capacitor Cvar2 for output.
In practical implementation, as shown in fig. 3, in this embodiment, fig. 3 is an equivalent circuit diagram of the resonant cavity 300 and the negative resistance coupling circuit 100, and the first transistor MP1 and the second transistor MN1 are respectively regarded as two switches (i.e., the first switch Sn and the second switch Sp); the first equivalent capacitance Cx and the second equivalent capacitance Cy are respectively capacitances equivalent to two ends of the resonant cavity 300, including the first variable capacitance Cvar1, the second variable capacitance Cvar2, one half of the fifth capacitance C5, and parasitic capacitances of the coupling pair, Vop and Von are respectively voltages of two ends of the resonant cavity 300 of the circuit, which are in opposite phases. The working frequency formula of the circuit is as follows:
it can be seen from equation (2) that the tuning range of the circuit is affected by parasitic capacitance. The use of the dynamic substrate biasing technique ensures that the negative resistance coupling circuit 100 of the circuit can be designed in a small size range, which means that the parasitic capacitance can be significantly reduced, so that the circuit operates in a wider operating frequency band. The embodiment also ensures that the circuit not only can realize low power consumption, but also can maintain a wide working frequency band.
Furthermore, in this embodiment, the fifth capacitor C5 is further disposed in the resonant cavity 300, so as to increase the Q value in the resonant cavity 300, and further reduce the power consumption of the circuit.
Specifically, referring to fig. 2, the output processing circuit 400 includes a first output unit 410 and a second output unit 420, wherein the first output unit 410 outputs a first driving signal, and the second output unit 420 outputs a second driving signal. The first output unit 410 includes a sixth capacitor C6, a seventh capacitor C7, and a first buffer a1, one end of the sixth capacitor C6 is connected to one end of the seventh capacitor C7, the output end of the first transistor MP1, the gate of the second transistor MN1, one end of the first inductor L1, and one end of the first variable capacitor Cvar1, the other end of the sixth capacitor C6 is connected to the input end of the first buffer a1, the output end of the first buffer a1 outputs a first driving signal to an external circuit or device, and the other end of the seventh capacitor C7 is grounded. The second output unit 420 includes an eighth capacitor C8, a ninth capacitor C9, and a second buffer a2, one end of the eighth capacitor C8 is connected to one end of the ninth capacitor C9, an input end of a second transistor MN1, a gate of a first transistor MP1, the other end of a first inductor L1, and one end of a second variable capacitor Cvar2, the other end of the eighth capacitor C8 is connected to an input end of the second buffer a2, an output end of the second buffer a2 outputs a second driving signal to an external circuit or device, and the other end of the ninth capacitor C9 is grounded.
In this embodiment, after being filtered by the sixth capacitor C6 and the seventh capacitor C7, the first driving signal is output to an external circuit or device through the first buffer a 1; meanwhile, after being filtered by the eighth capacitor C8 and the ninth capacitor C9, the second driving signal is output to an external circuit or device through the second buffer a2, so that the signal output function of the voltage-controlled oscillator is realized.
Further, the following explains the beneficial effects brought by the technical scheme of the invention:
the voltage-controlled oscillator is implemented by using an SMIC 55nm process library, as shown in fig. 4 to 7, fig. 4 is a transient simulation image of the voltage-controlled oscillator working at the lowest working frequency when the tuning voltage is 0V. The parasitic parameters are extracted to simulate the voltage-controlled oscillator, so as to obtain a simulated image of the graph, the output of the first output unit 410 is OUT1 in the graph, the output of the second output unit 420 is OUT2 in the graph, as can be seen from fig. 4, the signals of OUT1 and OUT2 are opposite, and the circuit output swing is about 0.3V.
Fig. 5 shows the phase noise performance of the vco operating at the lowest and highest frequencies, specifically, the phase noise at 1MHz frequency offset is-107.1 dBc/Hz and-101.9 dBc/Hz, respectively.
Fig. 6 shows the operating frequency and power consumption of the voltage-controlled oscillator at different tuning voltages. The tuning range is 0V-1.3V, the working frequency is 22.2 GHz-26.9 GHz (19.1%), and under the condition that the power supply voltage is 1.2V, the power consumption is 1.9 mW-2.1 mW.
To further measure the overall performance of the circuit, FIG. 7 shows FoM and FoM corresponding to 1MHz of the VCO at different operating frequenciesTAnd (4) parameters. As shown in fig. 7, the range of FoM is: -185.1 dBc/Hz-182.8 dBc/Hz; FoMTThe range of (A) is as follows: -190.72 dBc/Hz-188.48 dBc/Hz.
In summary, in the present invention, based on the voltage-controlled oscillator with NMOS-PMOS as the coupled pair current multiplexing structure, and in combination with the dynamic current bias technology, the simple error feedback network 200 is utilized to reduce the power consumption increase problem caused by the substrate dc bias, thereby further achieving lower power consumption and wide tuning range.
Based on the voltage-controlled oscillator, the invention also provides a voltage-controlled oscillation processing method, which comprises the following steps:
s100, multiplexing input current by a negative resistance coupling circuit, and outputting the current from an output processing circuit after resonant cavity processing;
s200, obtaining an error voltage from the resonant cavity by an error feedback network and feeding the error voltage back to the negative resistance coupling circuit, and increasing a threshold voltage in the working process of the negative resistance coupling circuit.
In specific implementation, in this embodiment, the input current is multiplexed by the negative resistance coupling circuit, the substrate voltage of the negative resistance coupling circuit is affected by the error voltage generated by the asymmetry of the current multiplexing structure, and the threshold voltage is increased in the coupling pair conduction process, so that the current during conduction is reduced, and the power consumption is reduced.
Based on the voltage-controlled oscillator, the invention further provides an electronic device, which comprises a device body, wherein a circuit board is arranged in the device body, and the voltage-controlled oscillator as claimed in any one of claims 1 to 8 is arranged on the circuit board. Since the voltage controlled oscillator has been described in detail above, it is not described in detail here.
In summary, the present invention provides a voltage-controlled oscillator, a voltage-controlled oscillation processing method and an electronic device, wherein the voltage-controlled oscillator includes: the device comprises a negative resistance coupling circuit, an error feedback network, a resonant cavity and an output processing circuit; the negative resistance coupling circuit multiplexes input current, the input current is output from the output processing circuit after being processed by the resonant cavity, the error voltage is obtained from the resonant cavity by the error feedback network and is fed back to the negative resistance coupling circuit, and the threshold voltage is increased in the working process of the negative resistance coupling circuit. According to the invention, the input current is multiplexed through the negative resistance coupling circuit, the substrate voltage of the negative resistance coupling circuit is influenced by the error voltage generated by the asymmetry of the current multiplexing structure, and the threshold voltage is increased in the coupling pair conduction process, so that the current in the conduction process is reduced, and the power consumption is further reduced.
It should be understood that equivalents and modifications of the technical solution and inventive concept thereof may occur to those skilled in the art, and all such modifications and alterations should fall within the scope of the appended claims.
Claims (7)
1. A voltage-controlled oscillator is characterized by comprising a negative resistance coupling circuit, an error feedback network, a resonant cavity and an output processing circuit; multiplexing input current by the negative resistance coupling circuit, outputting the current from the output processing circuit after the current is processed by the resonant cavity, obtaining error voltage from the resonant cavity by the error feedback network and feeding the error voltage back to the negative resistance coupling circuit, and increasing threshold voltage in the working process of the negative resistance coupling circuit;
the negative resistance coupling circuit comprises a first transistor MP1, a second transistor MN1 and a first resistor; the input end of the first transistor MP1 is connected to a power supply and an error feedback network, the control end of the first transistor MP1 is connected to the input end, the resonant cavity and the output processing circuit of the second transistor MN1, the output end of the first transistor MP1 is connected to the control end, the resonant cavity and the output processing circuit of the second transistor MN1, the output end of the second transistor MN1 is connected to one end of the first resistor, the other end of the first resistor is connected to the error feedback network and grounded, and the substrate of the first transistor MP1 and the substrate of the second transistor MN1 are respectively connected to the error feedback network;
the error feedback network comprises a first voltage division circuit and a first bias circuit, a first error voltage is extracted from the resonant cavity by the first bias circuit, and then the first error voltage is fed back to the substrate of the first transistor MP1 by the first voltage division circuit;
the resonant cavity comprises a first inductor, a first variable capacitor, a second variable capacitor and a fifth capacitor; the first end of the first inductor is connected with one end of the first variable capacitor, one end of the fifth capacitor, the output processing circuit, the output end of the first transistor MP1 and the control end of the second transistor MN1, the second end of the first inductor is connected with one end of the second variable capacitor, the other end of the fifth capacitor, the output processing circuit, the control end of the first transistor MP1 and the input end of the second transistor MN1, the center tap of the first inductor is connected with the error feedback network, and the other end of the first variable capacitor is connected with the other end of the second variable capacitor for outputting.
2. The vco of claim 1 wherein the error feedback network further comprises a second divider circuit and a second bias circuit, wherein the second bias circuit draws a second error voltage from the resonator and feeds the second error voltage back to the substrate of the second transistor MN 1.
3. The voltage controlled oscillator of claim 1, wherein the first bias circuit comprises a second resistor, and the first voltage divider circuit comprises a first capacitor and a second capacitor; one end of the second resistor is connected to a first bias voltage, the other end of the second resistor is connected to one end of the first capacitor, one end of the second capacitor and the substrate of the first transistor MP1, the other end of the first capacitor is connected to the input end of the first transistor MP1 and a power supply, and the other end of the second capacitor is connected to the resonant cavity.
4. The voltage controlled oscillator of claim 2, wherein the second bias circuit comprises a third resistor, and the second voltage divider circuit comprises a third capacitor and a fourth capacitor; one end of the third resistor is connected with a second bias voltage, the other end of the third resistor is connected with one end of the third capacitor, one end of the fourth capacitor and the substrate of the second transistor MN1, the other end of the third capacitor is connected with the other end of the first resistor and grounded, and the other end of the fourth capacitor is connected with the resonant cavity.
5. The voltage controlled oscillator of claim 1, wherein the output processing circuit comprises a first output unit and a second output unit, wherein the first output unit outputs a first driving signal and the second output unit outputs a second driving signal.
6. A voltage controlled oscillation processing method, comprising the steps of:
the negative resistance coupling circuit multiplexes input current, and the input current is output from the output processing circuit after being processed by the resonant cavity;
an error feedback network acquires error voltage from the resonant cavity and feeds the error voltage back to the negative resistance coupling circuit, and threshold voltage is increased in the working process of the negative resistance coupling circuit;
the negative resistance coupling circuit comprises a first transistor MP1, a second transistor MN1 and a first resistor; the input end of the first transistor MP1 is connected to a power supply and an error feedback network, the control end of the first transistor MP1 is connected to the input end, the resonant cavity and the output processing circuit of the second transistor MN1, the output end of the first transistor MP1 is connected to the control end, the resonant cavity and the output processing circuit of the second transistor MN1, the output end of the second transistor MN1 is connected to one end of the first resistor, the other end of the first resistor is connected to the error feedback network and grounded, and the substrate of the first transistor MP1 and the substrate of the second transistor MN1 are respectively connected to the error feedback network;
the error feedback network comprises a first voltage division circuit and a first bias circuit, a first error voltage is extracted from the resonant cavity by the first bias circuit, and then the first error voltage is fed back to the substrate of the first transistor MP1 by the first voltage division circuit;
the resonant cavity comprises a first inductor, a first variable capacitor, a second variable capacitor and a fifth capacitor; the first end of the first inductor is connected with one end of the first variable capacitor, one end of the fifth capacitor, the output processing circuit, the output end of the first transistor MP1 and the control end of the second transistor MN1, the second end of the first inductor is connected with one end of the second variable capacitor, the other end of the fifth capacitor, the output processing circuit, the control end of the first transistor MP1 and the input end of the second transistor MN1, the center tap of the first inductor is connected with the error feedback network, and the other end of the first variable capacitor is connected with the other end of the second variable capacitor for outputting.
7. An electronic apparatus, comprising an apparatus body in which a circuit board is provided, the circuit board being provided with a voltage controlled oscillator according to any one of claims 1 to 5.
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| US6239664B1 (en) * | 1999-03-05 | 2001-05-29 | Rf Monolithics, Inc. | Low phase noise, wide tuning range oscillator utilizing a one port saw resonator and method of operation |
| JP4071681B2 (en) * | 2003-07-24 | 2008-04-02 | 株式会社東芝 | Voltage controlled oscillator, frequency synthesizer and communication system |
| JP2005303839A (en) * | 2004-04-14 | 2005-10-27 | Matsushita Electric Ind Co Ltd | Voltage controlled oscillation apparatus |
| CN101212198B (en) * | 2006-12-30 | 2011-06-15 | 北京六合万通微电子技术股份有限公司 | Voltage controlled oscillator |
| CN201039084Y (en) * | 2007-04-20 | 2008-03-19 | 杭州中科微电子有限公司 | Low-amplitude error and low-phase noise RF voltage controlled surge based on capacitance compensation |
| US8717115B2 (en) * | 2012-01-13 | 2014-05-06 | Xilinx, Inc. | Resonator circuit and method of generating a resonating output signal |
| CN104272583B (en) * | 2013-02-15 | 2017-07-14 | 华为技术有限公司 | A kind of LC oscillator with tail current source and the oscillation circuit based on transformer |
| CN103475309B (en) * | 2013-09-17 | 2016-08-17 | 南京中科微电子有限公司 | A kind of constant tuning gain voltage controlled oscillator |
| US9531323B1 (en) * | 2015-06-24 | 2016-12-27 | Qualcomm Incorporated | Low-power balanced crystal oscillator |
| US9490746B1 (en) * | 2015-08-27 | 2016-11-08 | Maxlinear Asia Singapore PTE LTD | Voltage-controlled oscillator and a method for tuning oscillations |
| US9698727B1 (en) * | 2015-12-10 | 2017-07-04 | Qualcomm Incorporated | Coupled inductor-based resonator |
| CN107528542B (en) * | 2017-08-24 | 2020-07-03 | 天津大学 | Millimeter wave voltage-controlled oscillator realized by CMOS (complementary metal oxide semiconductor) process |
| CN109617528B (en) * | 2018-12-05 | 2023-03-21 | 深圳忆联信息系统有限公司 | Method and system for correcting frequency of active oscillator |
| CN110350868A (en) * | 2019-06-27 | 2019-10-18 | 伍晶 | A kind of self-mixing voltage controlled oscillator based on current multiplexing |
| CN111478668A (en) * | 2020-04-02 | 2020-07-31 | 电子科技大学 | Millimeter wave voltage-controlled oscillator with low flicker noise |
| CN111628725B (en) * | 2020-06-19 | 2022-11-01 | 南京邮电大学 | LC voltage-controlled oscillator circuit with noise circulation |
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