CN112736207A - QLED device, preparation method of QLED device and display device - Google Patents
QLED device, preparation method of QLED device and display device Download PDFInfo
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- Nanotechnology (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a QLED device, a preparation method of the QLED device and a display device, wherein the QLED device comprises an anode, a composite luminescent layer and a cathode which are sequentially stacked, the composite luminescent layer comprises a first quantum dot layer, a second quantum dot layer and a connecting layer, the connecting layer is positioned between the first quantum dot layer and the second quantum dot layer, the first quantum dot layer and the second quantum dot layer are made of core-shell quantum dots, and the material of the connecting layer is the same as that of a core-shell quantum dot shell. The connecting layer effectively isolates the quantum dots, increases the distance between the first layer of quantum dots and the second layer of quantum dots, reduces the accumulation of the quantum dots, improves the luminous efficiency of the quantum dots, and prolongs the service life of the QLED device. Moreover, the material of the connecting layer is consistent with that of the core-shell quantum dot shell, which is beneficial to the transmission of current carriers between two layers of quantum dots and avoids the energy difference between different materials.
Description
Technical Field
The invention relates to the field of QLED, in particular to a QLED device, a preparation method of the QLED device and a display device.
Background
The QLED (Quantum Dot Light Emitting Diodes) is a Quantum Dot thin layer made of Quantum dots, and the Quantum Dot thin layer is placed in a backlight module of a Liquid Crystal Display (LCD), so that compared with a display without a Quantum Dot thin layer, the Quantum Dot Light Emitting diode can reduce backlight brightness loss and color crosstalk of a RBG color filter, thereby obtaining better backlight utilization rate and improving display color gamut space. Generally, in a QLED device structure, when the quantum dots are unreasonably arranged as a light emitting layer, not only the phenomenon of electric leakage occurs and affects the light emitting efficiency of the QLED, but also the phenomenon of quantum dot aggregation occurs and affects the light emitting life of the QLED.
Disclosure of Invention
The invention mainly aims to provide a QLED device, a preparation method of the QLED device and a display device, and aims to solve the problem that the existing luminescent layer influences the luminescent performance of the QLED.
In order to achieve the above purpose, the white light QLED device provided by the present invention includes an anode, a composite light emitting layer, and a cathode, which are sequentially stacked, where the composite light emitting layer includes at least one first quantum dot layer, at least one second quantum dot layer, and a connection layer, the connection layer is located between the first quantum dot layer and the second quantum dot layer, the first quantum dot layer and the second quantum dot layer are core-shell quantum dots, and the connection layer is made of the same material as the core-shell quantum dot shell.
In an embodiment, the material of the connecting layer is any one or a mixture of several of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS.
In one embodiment, the core material of the core-shell quantum dot is one or a mixture of more of CdS, CdZnSe, CdSe/CdS, PbS and PbSe, and the shell material of the core-shell quantum dot is one or a mixture of more of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS.
In one embodiment, the QLED device further comprises a hole injection layer, the hole injection layer is located between the anode and the composite light-emitting layer, and the hole injection layer is made of PEDOT PSS, HAT-CN, F4-TCNQ、MoO3、V2O5、WO3Or ReO3Any one or more of them.
In an embodiment, the QLED device further includes a hole transport layer, the hole transport layer is located between the hole injection layer and the composite light emitting layer, and the material of the hole transport layer is any one or a mixture of several of Poly-TPD, TFB, PVK, CDBP, mCBP, CBP, mCP, TCTA, TAPC, NPB, and α -NPD.
In one embodiment, the thickness of the connection layer is 5nm to 20nm, and the thickness of the composite light-emitting layer is 25nm to 80 nm.
In addition, the invention also provides a preparation method of the QLED device, which comprises the following steps: sequentially depositing an anode, a composite light-emitting layer and a cathode on a substrate, wherein the deposition of the composite light-emitting layer comprises the following steps: and depositing a first quantum dot layer, a connecting layer and a second quantum dot layer on the anode in sequence, wherein the first quantum dot layer and the second quantum dot layer are made of core-shell quantum dots, and the connecting layer is made of the same material as the core-shell quantum dot shell.
In one embodiment, the first quantum dot layer, the connection layer, and the second quantum dot layer are formed by sputtering, printing, pad printing, or spin coating deposition followed by annealing.
In one embodiment, the spin coating speed is 2000r/min to 4000r/min, the spin coating time is 30s to 50s, the annealing temperature is 100 ℃ to 150 ℃, and the annealing time is 10min to 30 min.
Furthermore, the invention also provides a display device comprising the QLED device or the QLED device prepared by the method.
In the technical scheme of the invention, the QLED device comprises an anode, a composite light-emitting layer and a cathode which are sequentially stacked, wherein the composite light-emitting layer comprises a first quantum dot layer, a second quantum dot layer and a connecting layer, the connecting layer is positioned between the first quantum dot layer and the second quantum dot layer, the first quantum dot layer and the second quantum dot layer are made of core-shell quantum dots, and the connecting layer is made of the same material as the core-shell quantum dot shell. The connecting layer effectively isolates the quantum dots, increases the distance between the first layer of quantum dots and the second layer of quantum dots, reduces the accumulation of the quantum dots, improves the luminous efficiency of the quantum dots, and prolongs the service life of the QLED device. Moreover, the material of the connecting layer is consistent with that of the core-shell quantum dot shell, which is beneficial to the transmission of current carriers between two layers of quantum dots and avoids the energy difference between different materials.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a QLED device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a QLED device according to another embodiment of the invention;
fig. 3 is a schematic diagram of a QLED device according to yet another embodiment of the present invention.
The reference numbers illustrate:
| 1 | |
2 | |
| 3 | Hole injection layer | 4 | Hole transport layer |
| 5 | A first |
6 | Connecting |
| 7 | Second |
8 | Composite luminescent layer |
| 9 | |
10 | Cathode electrode |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a QLED device, as shown in FIG. 1, comprising an anode 2, a composite luminescent layer 8 and a cathode 10 which are sequentially stacked, wherein the composite luminescent layer 8 comprises at least one first quantum dot layer 5, at least one second quantum dot layer 7 and a connecting layer 6, the connecting layer 6 is positioned between the first quantum dot layer 5 and the second quantum dot layer 7, the first quantum dot layer 5 and the second quantum dot layer 7 are made of core-shell quantum dots, and the connecting layer 6 is made of the same material as a core-shell quantum dot shell material.
Referring to fig. 2, if the composite light emitting layer 8 includes a plurality of first quantum dot layers 5 and a plurality of second quantum dot layers 6, a connection layer is disposed between the two quantum dot layers.
It should be noted that, when there are a plurality of first quantum dot layers and a plurality of second quantum dot layers, [ the first quantum dot layer, the connection layer, and the second quantum dot layer ] can be used as the first circulation unit to form a structure in which a plurality of circulation units are stacked, and by adjusting the number of units, a plurality of thin single-layer quantum dot layers can be stacked on the separation layer of the quantum dot layers, which not only avoids the problem that the whole quantum dot light-emitting layer is too thin and leakage current is likely to occur, which can reduce the efficiency of the quantum dot device, but also avoids the problem that the whole quantum dot light-emitting layer is too thick and the quantum dot particles are likely to gather and affect the lifetime of the quantum dot device.
In this embodiment, the composite light emitting layer 8 includes a first quantum dot layer 5, a connection layer 6, and a second quantum dot layer 7 stacked in sequence, the materials of the first quantum dot layer 5 and the second quantum dot layer 7 are both core-shell quantum dots, the core-shell quantum dot shell material can passivate defects on the surface of the core material, so that the quantum dot core material is isolated from the external environment, carriers are bound in the core, and the energy band of the shell material and the energy band of the core material form a straddle-type structure or a staggered-type structure, wherein the energy band structure of the straddle-type core-shell quantum dot generally requires that the energy band of the shell material is wider than that of the core material, so that electrons and holes can be confined in the core material to improve the light emitting efficiency of the quantum dot; the core-shell quantum dots with the energy band structure in a staggered mode are usually formed by arranging the valence band or the conduction band of a shell material in the band gap of a core material, so that the injection of holes or electrons into the core material is facilitated, the effect of balancing carriers in a core is further achieved, and finally the luminous efficiency of the quantum dots is also improved.
The material of the connecting layer 6 is the same as that of the shell material of the core-shell quantum dot, the forbidden bandwidth of the material of the connecting layer 6 is larger than that of the core material of the core-shell quantum dot, and the connecting layer 6 can not capture holes and electrons, but also can transmit the holes and the electrons to the core-shell quantum dot, so that the core material of the core-shell quantum dot captures carriers to emit light. The connecting layer 6 effectively isolates the quantum dots, increases the distance between the first layer of quantum dots and the second layer of quantum dots, reduces the accumulation between the quantum dots, improves the luminous efficiency of the quantum dots, and prolongs the service life of the QLED device. The material of the connecting layer is consistent with that of the core-shell quantum dot shell, so that the transmission of current carriers between two layers of quantum dots is facilitated, and the energy difference between different materials is avoided.
Specifically, the material of the connecting layer is any one or a mixture of several of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS. The core material of the core-shell quantum dot is any one or mixture of more of CdS, CdZnSe, CdSe/CdS, PbS and PbSe, and the shell material of the core-shell quantum dot is any one or mixture of more of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS. The quantum dots with the core-shell structure are generally selected from one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elementary substances. The connecting layer 6 effectively isolates the quantum dots, increases the distance between the first layer of quantum dots and the second layer of quantum dots, and reduces the accumulation of the quantum dots. The material of the connecting layer is consistent with that of the core-shell quantum dot shell, so that the transmission of current carriers between two layers of quantum dots is facilitated, and the energy difference between different materials is avoided.
Further, as shown in fig. 3, the QLED device of the present embodiment further includes a substrate 1, a hole injection layer 3, a hole transport layer 4, and an electron transport layer 9, wherein when the QLED device is an upright QLED device, the substrate 1, the anode 2, the hole injection layer 3, the hole transport layer 4, the composite light emitting layer 8, the electron transport layer 9, and the cathode 10 are sequentially stacked. The substrate 1 may be rigid glass or a flexible PI Film (Polyimide Film). The anode 2 can be made of high work function metal and metal oxide, such as indium tin oxide, indium zinc oxide or simple substance gold. The cathode 10 may be made of a low work function metal or an alloy thereof, such as Al, Ag, or Mg — Ag alloy. Wherein, the materials ZnO and SnO of the electron transport layer 92ZnMgO, ZnAlO, ZnGaO or TiO2。
Wherein, the hole injection layer 3 is made of PEDOT (PSS (mixed aqueous solution of poly (3, 4-ethylenedioxythiophene) and polystyrene sulfonate), HAT-CN (2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazatriphenylene) and F4-TCNQ (2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane), MoO3、V2O5、WO3Or ReO3Any one of orMixing the above materials.
Wherein the hole transport layer 4 is made of Poly-TPD (polytriphenylamine), TFB (1,2,4, 5-tetra (trifluoromethyl) benzene), PVK (polyvinylcarbazole), CDBP (4,4 '-bis (9-carbazolyl) -2,2' -dimethylbiphenyl), mCBP (3, 3-bis (carbazolyl) biphenyl), CBP4,4 '-bis (9-carbazole) biphenyl, mCP (2, 6-dimethoxyphenol), TCTA (4,4' -tris (carbazol-9-yl) triphenylamine), TAPC (4,4 '-cyclohexylbis [ N, N-bis (4-methylphenyl) aniline), NPB (N, N' -diphenyl-N, N '- (1-naphthyl) -1,1' -biphenyl-4, 4 '-diamine) or alpha-NPD (N, N' -diphenyl-N, N '- (1-naphthyl) -2,2' -diamine).
Specifically, the thickness of the connecting layer 6 is 5nm to 20nm, and the thickness of the composite light-emitting layer 8 is 25nm to 80 nm. The first and second quantum dot layers 5 and 7 may be the same thickness or different thicknesses, for example, the first and second quantum dot layers 5 and 7 are each 10nm, and the connection layer 6 may be 5 nm. If the quantum dot layer is too thin, the content of the quantum dot luminescent material is too small, and if the connection layer 6 is too thick, the luminous efficiency of the QLED is affected. Therefore, the distance between the core-shell quantum dots can be increased by setting the reasonable thickness of the composite luminescent layer 8, the accumulation between the quantum dots is reduced, and the luminescent efficiency of the QLED is improved.
Further, the thickness of the anode 2 is 30nm to 50nm, the thickness of the hole injection layer 3 is 30nm to 50nm, the thickness of the hole transport layer 4 is 25nm to 45nm, the thickness of the electron transport layer 9 is 50nm to 70nm, and the thickness of the cathode 10 is 140nm to 160 nm.
In addition, the invention also provides a preparation method of the QLED device, wherein the anode 2, the composite luminescent layer 8 and the cathode 10 are sequentially deposited on the substrate 1, and the deposition of the composite luminescent layer 8 comprises the following steps: the method comprises the steps that a first quantum dot layer 5, a connecting layer 6 and a second quantum dot layer are sequentially deposited on an anode 2, quantum dot luminescent materials of the first quantum dot layer 5 and the second quantum dot layer 7 comprise core-shell quantum dots, the first quantum dot layer 5 and the second quantum dot layer 7 are made of core-shell quantum dots, the connecting layer 6 is made of a connecting layer material, and the forbidden bandwidth of the connecting layer material is larger than that of a core material of the core-shell quantum dots.
In this embodiment, an example of a front QLED is described, in which an anode 2, a hole injection layer 3, a hole transport layer 4, a first quantum dot layer 5, a connection layer 6, a second quantum dot layer 7, an electron transport layer 9, and a cathode 10 are sequentially deposited on a substrate 1, wherein the first quantum dot layer 5, the connection layer 6, and the second quantum dot layer 7 constitute a composite light-emitting layer 8. The materials of the first quantum dot layer 5 and the second quantum dot layer 7 are core-shell quantum dots, wherein the material of the connecting layer 6 is the same as that of a core-shell quantum dot shell, and the connecting layer 6 can not capture holes and electrons, but also can transmit the holes and the electrons to the core-shell quantum dots, so that the core material of the core-shell quantum dots captures carriers to emit light. The connecting layer 6 effectively isolates the quantum dots, increases the distance between the first layer of quantum dots and the second layer of quantum dots, reduces the accumulation between the quantum dots, improves the luminous efficiency of the quantum dots, and prolongs the service life of the QLED device. Moreover, the material of the connecting layer is consistent with that of the core-shell quantum dot shell, which is beneficial to the transmission of current carriers between two layers of quantum dots and avoids the energy difference between different materials.
Specifically, the material of the connecting layer is any one or a mixture of several of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS. The core material of the core-shell quantum dot is any one or mixture of more of CdS, CdZnSe, CdSe/CdS, PbS and PbSe, and the shell material of the core-shell quantum dot is any one or mixture of more of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS.
Further, the first quantum dot layer 5, the connection layer 6, and the second quantum dot layer 7 are prepared by depositing by sputtering, printing, pad printing, or spin coating, and then annealing. Specifically, spin coating may be used, and is also called spin coating because the fluid used therein has a high viscosity and is colloidal. A typical spin coating process is mainly divided into three steps of glue dropping, high-speed rotation and drying. Firstly, the glue dripping is to drip the spin-on liquid on a substrate, then spread the spin-on liquid on a substrate by high-speed rotation to form a uniform film, and then remove the residual solvent by drying to finally obtain the film with stable performance. Specifically, the rotating speed of the spin coating is 2000 r/min-4000 r/min, and the time of the spin coating is 30 s-50 s. And (3) annealing treatment is carried out after the spin coating is finished, wherein the annealing temperature is 100-150 ℃, and the annealing time is 10-30 min.
Moreover, the invention also provides a display device which comprises the QLED device or the QLED device prepared by the preparation method. The specific structure of the QLED device refers to the above embodiments, and since the display device adopts all technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here.
Example 1 (comparative example)
The QLED device of the present embodiment includes a substrate 1, an anode 2, a hole injection layer 3, a hole transport layer 4, a first quantum dot layer 5, an electron transport layer 9, and a cathode 10, which are sequentially stacked.
The preparation method of the QLED device of the present embodiment includes the following steps: depositing a transparent conductive indium tin oxide anode 2 with the thickness of 40nm on a glass substrate 1, depositing PEDOT (PSS) on the anode 2, drying to form a film, and annealing at 150 ℃ for 15min to form a hole injection layer 3 with the thickness of 40 nm; depositing TFB ink on the hole injection layer 3, drying to form a film, and annealing at 150 ℃ for 30min to form a hole transport layer 4 with the thickness of 35 nm; depositing a CdSe/ZnS red light quantum dot n-octane solution on the hole transport layer 4, drying to form a film, and annealing at 100 ℃ for 10min to form a first quantum dot layer 5 with the thickness of 26 nm; and depositing the ZnO nano-particle ink on the first quantum dot layer 5, drying to form a film, then annealing at 100 ℃ for 10min to form an electron transport layer 9 with the thickness of 60nm, and finally evaporating Ag on the electron transport layer 9 to obtain a cathode 10 with the thickness of 150 nm.
Example 2
The QLED device of the present embodiment includes a substrate 1, an anode 2, a hole injection layer 3, a hole transport layer 4, a first quantum dot layer 5, a connection layer 6, a second quantum dot layer 7, an electron transport layer 9, and a cathode 10, which are stacked in this order.
The preparation method of the QLED device of the present embodiment includes the following steps: depositing a transparent conductive indium tin oxide anode 2 with the thickness of 40nm on a glass substrate 1, spin-coating PEDOT (PSS) on the anode 2 at the spin-coating rotation speed of 2000r/min for 40s, drying to form a film, and annealing at 150 ℃ for 15min to form a hole injection layer 3 with the thickness of 40 nm; spin-coating the TFB ink on the hole injection layer 3 at the rotating speed of 3000r/min for 40s, drying to form a film, and annealing at 150 ℃ for 30min to form a hole transport layer 4 with the thickness of 35 nm; spin-coating a CdSe/ZnS red light quantum dot n-octane solution on a hole transport layer 4 at a spin-coating rotation speed of 3000r/min for 40s, drying to form a film, and annealing at 100 ℃ for 10min to form a first quantum dot layer 5 with the thickness of 13 nm; spin coating ZnS nanocrystalline ethanol solution on the first quantum dot layer 5 at a spin coating rotation speed of 3000r/min for 40s, drying to form a film, and annealing at 100 ℃ for 130min to form a connecting layer 6 with the thickness of 15 nm; spin-coating a CdSe/ZnS red light quantum dot n-octane solution on the connecting layer 6 at a spin-coating rotation speed of 3000r/min for 40s, drying to form a film, and annealing at 100 ℃ for 10min to form a second quantum dot layer 7 with the thickness of 13 nm; and spin-coating the ZnO nanoparticle ink on the second quantum dot layer 7 at the spin-coating speed of 3000r/min for 40s, drying to form a film, annealing at 100 ℃ for 10min to form an electron transport layer 9 with the thickness of 60nm, and finally evaporating Ag on the electron transport layer 9 to obtain the cathode 10 with the thickness of 150 nm.
To illustrate that the method for manufacturing the QLED device of the present invention can effectively improve the light emitting efficiency and lifetime of the QLED, the method in the above examples 1-2 is used to test the method to effectively improve the light emitting efficiency and lifetime of the QLED, but it should not limit the scope of the present invention.
A first group of QLED devices prepared according to the method in example one; second group QLED devices prepared according to the method of second embodiment, finally from external quantum efficiency, current efficiency and T at 1000nit95And counting the three indexes.
TABLE 1QLED device efficiency index
| QLED device | Maximum external quantum efficiency | Maximum current efficiency (cd/A) | T at 1000nit95(h) |
| First group | 20.3％ | 20.6 | 300 |
| Second group | 20.5％ | 20.8 | 1000 |
As shown in Table 1, the QLED device prepared by the first embodiment of the present invention has a maximum external quantum efficiency of 20.3%, a maximum current efficiency of 20.6cd/A, and a T at 1000nit95Is 300h, T95For the half-life, the time taken for the luminance to decay to 95% at 1000nit was 300 h. The maximum external quantum efficiency of the QLED device prepared by the second embodiment of the invention is 20.5%, the maximum current efficiency is 20.8cd/A, and T is 1000nit95Is 1000h, T95The time taken for the luminance to decay to 95% at 1000nit, 1000h for the half-life, the maximum external quantum efficiency, the maximum current efficiency and T at 1000nit for the QLED prepared in the second example95All greater than the maximum external quantum efficiency, the maximum current efficiency and T at 1000nit of the QLED prepared in the second embodiment95The QLED device manufactured by the manufacturing method according to the second embodiment of the present invention includes two quantum dot layers and a connection layer, and the light emitting efficiency and lifetime of the QLED device are improved compared to those of a QLED device having only one quantum dot layer.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. The QLED device is characterized by comprising an anode, a composite light emitting layer and a cathode which are sequentially stacked, wherein the composite light emitting layer comprises at least one first quantum dot layer, at least one second quantum dot layer and a connecting layer, the connecting layer is located between the first quantum dot layer and the second quantum dot layer, the first quantum dot layer and the second quantum dot layer are made of core-shell quantum dots, and the connecting layer is made of the same material as the core-shell quantum dot shell.
2. The QLED device of claim 1, wherein the connection layer material is any one or a mixture of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS.
3. The QLED device according to claim 1, wherein the core material of the core-shell quantum dot is one or a mixture of CdS, CdZnSe, CdSe/CdS, PbS and PbSe, and the shell material of the core-shell quantum dot is one or a mixture of ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnTeS and ZnMgS.
4. The QLED device of claim 1, further comprising a hole injection layer between the anode and the composite light emitting layer, wherein the hole injection layer is PEDOT PSS, HAT-CN, F4-TCNQ、MoO3、V2O5、WO3Or ReO3Any one or more of them.
5. The QLED device of claim 4, further comprising a hole transport layer, wherein the hole transport layer is located between the hole injection layer and the composite light emitting layer, and the hole transport layer is made of a material selected from the group consisting of Poly-TPD, TFB, PVK, CDBP, mCBP, mCP, TCTA, TAPC, NPB, and α -NPD.
6. The QLED device of claim 1, wherein the tie layer has a thickness of 5nm to 20nm and the composite light emitting layer has a thickness of 25nm to 80 nm.
7. A method for preparing a QLED device, the method comprising the steps of: sequentially depositing an anode, a composite light-emitting layer and a cathode on a substrate, wherein the deposition of the composite light-emitting layer comprises the following steps: and depositing a first quantum dot layer, a connecting layer and a second quantum dot layer on the anode in sequence, wherein the first quantum dot layer and the second quantum dot layer are made of core-shell quantum dots, and the connecting layer is made of the same material as the core-shell quantum dot shell.
8. The method of claim 7, wherein the first quantum dot layer, the connection layer, and the second quantum dot layer are formed by sputtering, printing, pad printing, or spin coating deposition followed by annealing.
9. The method for manufacturing a QLED device according to claim 8, wherein the spin coating is performed at a rotation speed of 2000r/min to 4000r/min for 30s to 50s, the annealing temperature is 100 ℃ to 150 ℃, and the annealing time is 10min to 30 min.
10. A display device comprising a QLED device according to any one of claims 1 to 6 or a QLED device prepared by the method of any one of claims 7 to 9.
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