CN116782726A - Film and preparation method thereof, light-emitting device and preparation method thereof, and display device - Google Patents
Film and preparation method thereof, light-emitting device and preparation method thereof, and display device Download PDFInfo
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- CN116782726A CN116782726A CN202210215930.3A CN202210215930A CN116782726A CN 116782726 A CN116782726 A CN 116782726A CN 202210215930 A CN202210215930 A CN 202210215930A CN 116782726 A CN116782726 A CN 116782726A
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- Electroluminescent Light Sources (AREA)
Abstract
The application relates to the technical field of display, and discloses a film, a preparation method thereof, a light-emitting device, a preparation method thereof and a display device. The preparation method of the film comprises the following steps: providing a first solution comprising an organic solvent, paraffin wax, and a hole transporting material; providing a substrate, and arranging the first solution on the substrate to obtain a film. In the process of forming the film, the first solution is caused to carry out phase separation, so that the film forms a nano porous structure, a luminescent layer is prepared by utilizing a hole transport layer formed by the film, quantum dot nano particles are filled into nano porous of the nano porous structure of the hole transport film, a heterojunction structure is formed, the heterojunction structure is favorable for reducing potential barriers between a hole transport material and the quantum dot luminescent layer, hole injection from the hole transport layer to the quantum luminescent layer is promoted, hole injection efficiency is improved, carriers in a luminescent device are more balanced, and therefore the efficiency and the service life of the luminescent device are effectively improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a film and a preparation method thereof, a light-emitting device and a preparation method thereof, and a display device.
Background
The quantum dot has the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, high quantum yield and the like, and can be prepared by a printing process, so that the light-emitting diode (namely the quantum dot light-emitting diode: QLED) based on the quantum dot is recently paid attention to by people, and the device performance index of the light-emitting diode is also developed rapidly. At present, the external quantum efficiency of the QLED with red and green colors is more than 20%, and the service life of the device basically meets the requirements.
However, in the blue quantum dot light-emitting diode, mobility of a commonly used hole transport material is too low, so that carrier injection in a quantum dot light-emitting layer is unbalanced, and the carrier mobility cannot completely meet the requirement, so that performance of the blue quantum dot light-emitting diode is severely limited. In addition, the rest of the hole transport materials have a higher potential barrier with the blue quantum dot luminescent layer, which is unfavorable for injecting holes from the hole transport layer to the quantum dot luminescent layer. This results in a blue qd led with lower luminous efficiency, lower luminance or shorter lifetime.
Therefore, how to optimize the performance of the electron transport material, improve the electron mobility of the electron transport material in the quantum dot light emitting diode, effectively balance the carriers in the quantum dot light emitting layer, and is particularly critical to improving the light emitting efficiency or the service life of the quantum dot light emitting diode.
Disclosure of Invention
In view of the above, the present application provides a thin film and a preparation method thereof, a light emitting device and a preparation method thereof, and a display device, which aim to solve the technical problems of low light emitting efficiency or short service life of a quantum dot light emitting diode.
In order to solve the technical problems, the embodiment of the application provides a preparation method of a film, which comprises the following steps:
providing a first solution comprising an organic solvent, paraffin wax, and a hole transporting material;
providing a substrate, and arranging the first solution on the substrate to obtain a film.
In some embodiments, the providing the first solution comprises:
mixing the hole transport material with the organic solvent to dissolve the hole transport material and form a mixed solution;
and adding paraffin into the mixed solution to form the first solution.
In some embodiments, the hole transport material is selected from at least one of PSS, TAPC, doped graphene, undoped graphene, and C60, or from at least one of doped or undoped NiO, moOx, WOx, and CuO; and/or the organic solvent is selected from at least one of toluene, chlorobenzene, chloroform and dimethyl sulfoxide.
In some embodiments, the mass ratio of the hole transport material to paraffin wax is 8 (0.1-0.5).
In some embodiments, the concentration of the paraffin wax in the first solution is 0.1mg/ml to 0.5mg/ml; and/or the concentration of the hole transport material is 5mg/ml to 8mg/ml.
In some embodiments, the providing a substrate, disposing the first solution on the substrate, obtaining a thin film; comprising the following steps:
providing a substrate, placing the substrate in an inert gas atmosphere, arranging the first solution on the substrate, and performing vacuum treatment to form the film, wherein the film has a nano-porous structure.
In some embodiments, the film has a thickness of 10 to 100nm.
Correspondingly, the embodiment of the application also provides a film which is prepared by using the preparation method of the film.
Correspondingly, the embodiment of the application also provides a light-emitting device, which is characterized by comprising an anode, a hole transport layer, a light-emitting layer and a cathode which are arranged in a stacked manner; wherein, the hole transport layer comprises the film according to the embodiment of the application.
In some embodiments, the material of the light emitting layer is selected from at least one of single structure quantum dots selected from at least one of II-VI compounds selected from at least one of CdSe, cdS, cdTe, znSe, znS, cdTe, znTe, cdZnS, cdZnSe, cdZnTe, znSeS, znSeTe, znTeS, cdSeS, cdSeTe, cdTeS, cdZnSeS, cdZnSeTe and CdZnSTe, III-V compounds selected from at least one of InP, inAs, gaP, gaAs, gaSb, alN, alP, inAsP, inNP, inNSb, gaAlNP and InAlNP, and I-III-VI compounds selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); the core of the quantum dot with the core-shell structure is selected from any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure is selected from at least one of CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS and ZnS; and/or the number of the groups of groups,
the anode material is selected from one or more of metal, carbon material and metal oxide, and one or more of metal Al, ag, cu, mo, au, ba, ca and Mg; the carbon material is selected from one or more of graphite, carbon nano tube, graphene and carbon fiber; the metal oxide comprises one or more of doped or undoped metal oxide, ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, wherein the composite electrode is selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following; and/or the number of the groups of groups,
the cathode material is selected from one or more of metal, carbon material and metal oxide, and the metal is selected from one or more of Al, ag, cu, mo, au, ba, ca and Mg; the carbon material is selected from one or more of graphite, carbon nano tube, graphene and carbon fiber Seed; the metal oxide comprises one or more of doped or undoped metal oxide, ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, wherein the composite electrode is selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following.
In some embodiments, the light emitting device further comprises a hole transport layer, the hole injection layer being located between the hole transport layer and the anode; and/or the material of the hole injection layer is selected from one or more of PEDOT PSS, MCC, cuPc, F-TCNQ, HATCN, transition metal oxide and transition metal chalcogenide.
In some embodiments, the light emitting device further comprises an electron transport layer located between the light emitting layer and the cathode; and/or the material of the electron transport layer is selected from at least one of nano zinc oxide material, nano titanium oxide material, nano tin oxide material, nano barium titanate material and element doped nano oxide electron transport material thereof, and the doping element is selected from at least one of aluminum element, magnesium element, lithium element, manganese element, yttrium element, lanthanum element, copper element, nickel element, zirconium element, cerium element and gadolinium element.
Correspondingly, the embodiment of the application also provides a preparation method of the light-emitting device, which comprises the following steps:
providing a base plate of an anode substrate;
a hole transport layer is arranged on the base plate of the anode substrate;
forming a stacked light emitting layer and cathode on the hole transport layer;
wherein the hole transport layer comprises the thin film according to the embodiment of the present application;
or,
providing a base plate of a cathode substrate;
forming a light emitting layer, a hole transporting layer, and an anode, which are stacked, on a base plate of the cathode substrate;
wherein, the hole transport layer comprises the film according to the embodiment of the application.
Correspondingly, the embodiment of the application also provides a display device which comprises the light-emitting device.
The embodiment of the application provides a film, a preparation method thereof, a light-emitting device, a preparation method thereof and a display device. In the film forming process, as the organic solvent containing the hole transport material and the nano liquid drops of paraffin are liquid before film forming, the film formed after film forming is solid, and the phase change from liquid to solid occurs, so that the first solution is promoted to carry out phase separation, and in the later film forming period, the film forms a nano porous structure along with volatilization of the organic solvent in the first solution, so that the hole transport layer formed by the film is used for preparing a luminescent layer, the quantum dot nano particles are filled into the nano porous of the nano porous structure of the film of the hole transport layer, and finally, a novel heterojunction structure is formed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for preparing a thin film according to an embodiment of the present application;
FIG. 2 is a schematic flow chart of a preparation step of providing a first solution in a preparation method of a thin film according to an embodiment of the present application;
fig. 3 is a schematic structural view of a light emitting device according to an embodiment of the present application;
fig. 4 is a schematic flow chart of a method for manufacturing a light emitting device according to an embodiment of the present application;
fig. 5 is a schematic flow chart of another method for manufacturing a light emitting device according to an embodiment of the present application.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the description of the present application, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The weights of the relevant components mentioned in the description of the embodiments of the present application may refer not only to the specific contents of the components, but also to the proportional relationship between the weights of the components, so long as the contents of the relevant components in the description of the embodiments of the present application are scaled up or down within the scope of the disclosure of the embodiments of the present application. Specifically, the weight in the specification of the embodiment of the application can be mass units known in the chemical industry field such as mu g, mg, g, kg.
In one embodiment, referring to fig. 1, the present application provides a method for preparing a thin film, the method comprising the following steps:
s1, providing a first solution, wherein the first solution comprises an organic solvent, paraffin and a hole transport material;
S2, providing a substrate, and arranging the first solution on the substrate to obtain a film.
In this embodiment, a thin film is obtained by providing a first solution including an organic solvent, paraffin, and a hole transporting material, and a base, and disposing the first solution on a substrate. In the film forming process, as the organic solvent containing the hole transport material and the nano liquid drops of paraffin are liquid before film forming, the film formed after film forming is solid, and the phase change from liquid to solid occurs, so that the first solution is promoted to carry out phase separation, and in the later film forming period, the film forms a nano porous structure along with volatilization of the organic solvent in the first solution, so that the hole transport layer formed by the film is used for preparing a luminescent layer, the quantum dot nano particles are filled into the nano porous of the nano porous structure of the film of the hole transport layer, and finally, a novel heterojunction structure is formed.
In one embodiment, referring to fig. 2, the providing the first solution includes:
and S11, mixing the hole transport material with the organic solvent to dissolve the hole transport material to form a mixed solution.
In this step, the hole transport layer is selected from organic materials having hole transport ability, including but not limited to poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), polyvinylcarbazole (PVK), poly (N, N ' -bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (poly-TPD), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4',4 "-tris (carbazol-9-yl) triphenylamine (TCATA), 4' -bis (9-Carbazolyl) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine (TPD), N ' -diphenyl-N, N ' - (1-naphtyl) -1,1' -biphenyl-4, 4' -diamine (NPB), poly (3, 4-ethylenedioxythiophene) -polyvinylsulfonic acid (pedsulfonic acid); PSS), 4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline ] (TAPC), doped graphene, undoped graphene, and C60. The material of the hole transport layer may also be selected from inorganic materials having hole transport capabilities, including but not limited to one or more of doped or undoped NiO, moOx, WOx and CuO. The thickness of the hole transport layer is 10nm to 100nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 100nm, etc.
The organic solvent is at least one selected from toluene, chlorobenzene, chloroform and dimethyl sulfoxide. The concentration of the hole transport material is 5mg/ml to 8mg/ml.
And mixing the hole transport material with the organic solvent to dissolve the hole transport material to form a mixed solution with the concentration of 8mg/ml.
S12, adding paraffin into the mixed solution to form the first solution.
In the step, the mass ratio of the hole transport material to the paraffin is 8 (0.1-0.5), and the concentration of the paraffin is 0.1-0.5 mg/ml. Specifically, paraffin wax having a concentration of 0.1mg/ml to 0.5mg/ml is added to an organic solvent dissolved in a hole transport material, followed by stirring for half an hour to form a first solution comprising the organic solvent, paraffin wax and the hole transport material. Thereby promoting the phase separation of the first solution in the film forming process, and enabling the film to form a nano porous structure along with the volatilization of the organic solvent in the first solution in the later film forming period.
In one embodiment, in the step S2, the providing a substrate, disposing the first solution on the substrate to obtain a thin film; comprising the following steps:
s21, providing a substrate.
In this step, the kind of the substrate is not limited. In one embodiment, the substrate is a cathode substrate, and an electron transport layer comprising a nano zinc oxide material is disposed on the cathode. Wherein the substrate can be a conventionally used substrate, such as a rigid substrate made of glass The method comprises the steps of carrying out a first treatment on the surface of the And the flexible substrate can also be made of polyimide. The material of the cathode may be, for example, one or more of a metal, a carbon material, and a metal oxide, and the metal may be, for example, one or more of Al, ag, cu, mo, au, ba, ca and Mg; the carbon material may be, for example, one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide may be doped or undoped metal oxide including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also includes a composite electrode of doped or undoped transparent metal oxide with metal sandwiched therebetween, the composite electrode including but not limited to AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following. In another embodiment, the substrate includes an anode and a light emitting layer disposed in a stack, and an electron transport layer including a material prepared from a nano zinc oxide material is disposed on the light emitting layer. If the optoelectronic device further comprises other functional layers, the substrate may correspondingly comprise other functional layers.
A bottom electrode is fabricated on the substrate, for example, to form an ITO base. And then the patterned ITO substrate is cleaned, and the cleaned ITO substrate is treated by ultraviolet-ozone or oxygen plasma before other functional layers are deposited, so that organic matters attached to the surface of the ITO are further removed, and the work function of the ITO is improved.
S22, placing the substrate in an inert gas atmosphere, disposing the first solution on the substrate, and performing vacuum treatment to form the film, wherein the film has a nano-porous structure.
The inert gas is at least one selected from nitrogen, helium, neon, argon, krypton and xenon. In this embodiment, the inert gas is nitrogen.
Specifically, the substrate is placed in a nitrogen atmosphere, the first solution can be arranged on the substrate by adopting a deposition method, and then the substrate is placed in a vacuum bin for vacuum treatment for about 30 minutes, so that a film with a nano porous structure is formed. Wherein the thickness of the film is 10-100 nm.
In the process of forming the film, the first solution comprising the organic solvent, paraffin and the hole transport material is promoted to carry out phase separation, and in the later period of film formation, the film forms a nano-porous structure along with the volatilization of the organic solvent in the first solution. And then forming a hole transport layer by using the film, preparing a light-emitting layer on the hole transport layer, and filling quantum dot nano particles into nano-holes of a nano-porous structure of the film forming the hole transport layer to finally form a novel heterojunction structure. Compared with a quasi-planar heterojunction structure, the novel heterojunction structure is beneficial to reducing potential barriers between hole transport materials and quantum dot luminescent layers, promoting holes to be injected into the quantum luminescent layers from the hole transport layers, improving hole injection efficiency, enabling carriers in the luminescent device to be more balanced, and accordingly improving efficiency and service life of the luminescent device effectively.
In one embodiment, the present application provides a film made using the method of making a film described in any of the embodiments above.
In this embodiment, during the process of forming the thin film, the first solution including the organic solvent, paraffin and the hole-transporting material is caused to undergo phase separation, and in the later stage of film formation, the thin film forms a nano-porous structure along with the volatilization of the organic solvent in the first solution. And then forming a hole transport layer by using the film, preparing a light-emitting layer on the hole transport layer, and filling quantum dot nano particles into nano-holes of a nano-porous structure of the film forming the hole transport layer to finally form a novel heterojunction structure. Compared with a quasi-planar heterojunction structure, the novel heterojunction structure is beneficial to reducing potential barriers between hole transport materials and quantum dot luminescent layers, promoting holes to be injected into the quantum luminescent layers from the hole transport layers, improving hole injection efficiency, enabling carriers in the luminescent device to be more balanced, and accordingly improving efficiency and service life of the luminescent device effectively.
In one embodiment, referring to fig. 3, the present application provides a light emitting device 100, wherein the light emitting device 100 includes an anode 10, a hole transport layer 30, a light emitting layer 40 and a cathode 60; wherein the hole transport layer 30 comprises the thin film according to the above embodiment, and the thin film is prepared by using the preparation method of the thin film according to any of the above embodiments.
In this embodiment, since the first solution including the organic solvent, paraffin and the hole-transporting material undergoes phase separation during the formation of the thin film, the thin film forms a nanoporous structure with the volatilization of the organic solvent in the first solution at the later stage of film formation. So that the hole transport layer 30 formed using the thin film also has a nano-porous structure. Subsequently, the light emitting layer 40 is prepared on the hole transport layer 30, and quantum dot nanoparticles are filled into the nano-pores of the nano-porous structure of the hole transport layer 30, to finally form a novel heterojunction structure. Compared with a quasi-planar heterojunction structure, the novel heterojunction structure is beneficial to reducing potential barriers between hole transport materials and quantum dot luminescent layers, promoting holes to be injected into the quantum luminescent layers from the hole transport layers, improving hole injection efficiency, enabling carriers in the luminescent device to be more balanced, and accordingly improving efficiency and service life of the luminescent device effectively.
In one embodiment, anode 10 may be formed using conventional anode materials and thicknesses, and embodiments of the present application are not limited. For example, the anode 10 may be selected from one or more of a metal, a carbon material, and a metal oxide, and the metal may be, for example, one or more of Al, ag, cu, mo, au, ba, ca and Mg; the carbon material may be, for example, one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide may be doped or undoped metal oxide including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also includes a composite electrode of doped or undoped transparent metal oxide with metal sandwiched therebetween, the composite electrode including but not limited to AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following. The thickness of the anode 10 is known in the art as anode thickness, e.gMay be 10nm to 200nm, such as 10nm, 50nm, 80nm, 100nm, 120nm, 150nm, 200nm, etc. In one embodiment, cathode 60 may be formed using conventional cathode materials and thicknesses, and embodiments of the present application are not limited. For example, the material of the cathode 60 may be selected from one or more of metal, carbon material, and metal oxide, and the metal may be one or more of Al, ag, cu, mo, au, ba, ca and Mg, for example; the carbon material may be, for example, one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide may be doped or undoped metal oxide including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also includes a composite electrode of doped or undoped transparent metal oxide with metal sandwiched therebetween, the composite electrode including but not limited to AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following. The thickness of the cathode 60 is a cathode thickness known in the art and may be, for example, 10nm to 200nm, such as 10nm, 35nm, 50nm, 80nm, 120nm, 150nm, 200nm, etc.
In one embodiment, referring to fig. 3, the light emitting device 100 further includes a hole injection layer 20, and the hole injection layer 20 is located between the hole transport layer 30 and the anode 10. The hole injection layer 20 may be made of a hole injection material conventional in the art, and may be selected from PEODT: PSS, MCC, cuPc, F4-TCNQ, HATCN, transition metal oxides (e.g. NiO, moO) 3 、WO 3 、V 2 O 5 ) At least one or more of transition metal chalcogenide compounds, but not limited thereto. The thickness of the hole injection layer 20 is 10nm to 100nm.
The material of the hole transport layer 30 is selected from organic materials having hole transport capability, including but not limited to poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), polyvinylcarbazole (PVK), poly (N, N ' -bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (poly-TPD), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4',4 "-tris (carbazole-9-yl) triphenylamine (TCATA), 4' -bis (9-Carbazole) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine (TPD), N ' -diphenyl-N, N ' - (1-naphtyl) -1,1' -biphenyl-4, 4' -diamine (NPB), poly (3, 4-ethylenedioxythiophene) -Poly (PEDOT); PSS), 4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline ] (TAPC), doped graphene, undoped graphene, and C60. The material of the hole transport layer 30 may also be selected from inorganic materials having hole transport capabilities, including, but not limited to, one or more of doped or undoped NiO, moOx, WOx and CuO. The thickness of the hole transport layer 30 is 10nm to 100nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 100nm, etc.
The material of the light emitting layer 40 may be selected according to a conventional quantum dot type. The quantum dot of the light emitting layer can be at least one of red quantum dot, green quantum dot, blue quantum dot and yellow quantum dot; the quantum dot material can contain cadmium or not; the quantum dots can be oil-soluble quantum dots, including binary phase, ternary phase and quaternary phase quantum dots. In some embodiments, the quantum dot material may be selected from at least one of single structure quantum dots selected from at least one of group II-VI compounds selected from at least one of CdSe, cdS, cdTe, znSe, znS, cdTe, znTe, cdZnS, cdZnSe, cdZnTe, znSeS, znSeTe, znTeS, cdSeS, cdSeTe, cdTeS, cdZnSeS, cdZnSeTe and CdZnSTe, group III-V compounds selected from at least one of InP, inAs, gaP, gaAs, gaSb, alN, alP, inAsP, inNP, inNSb, gaAlNP and InAlNP, and group I-III-VI compounds selected from CuInS, and core-shell structure quantum dots 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); the core of the quantum dot with the core-shell structure is selected from any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure is selected from at least one of CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS and ZnS. In the present practice In the embodiment, blue quantum dots are selected, and the thickness is 10-60nm. When the light emitting layer 40 is prepared on the hole transport layer 30, the nanoparticles of the light emitting layer 40 are filled into the nano-holes on the hole transport layer 30, forming a heterojunction structure.
In one embodiment, referring to fig. 3, the light emitting device 100 further includes an electron transport layer 50, the electron transport layer 50 is located between the light emitting layer 40 and the cathode 60, wherein the electron transport layer 50 is a common N-type semiconductor nano-oxide. In some embodiments, the material of the electron transport layer 50 is selected from at least one of nano zinc oxide, nano titanium oxide, nano tin oxide, nano barium titanate, and element doped nano oxide electron transport materials thereof, and the doping element is selected from at least one of aluminum element, magnesium element, lithium element, manganese element, yttrium element, lanthanum element, copper element, nickel element, zirconium element, cerium element, gadolinium element. In this embodiment, the material of the electron transport layer 50 is 5% manganese doped nano zinc oxide, and the thickness is 10-60nm.
The cathode 60 may be made of a common cathode material and thickness, and embodiments of the present application are not limited thereto. For example, the material of the cathode 60 may be one or more of metal, carbon material, and metal oxide, and the metal may be one or more of Al, ag, cu, mo, au, ba, ca and Mg; the carbon material may be, for example, one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide may be doped or undoped metal oxide including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also includes a composite electrode of doped or undoped transparent metal oxide with metal sandwiched therebetween, the composite electrode including but not limited to AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following. The thickness of the cathode 60 is 60-120 nm.
More specifically, the light emitting device 100 may further include a substrate on which the anode is disposed. The substrate may include a rigid substrate such as glass, a metal foil, etc., which is commonly used, or a flexible substrate such as Polyimide (PI), polycarbonate (PC), polystyrene (PS), polyethylene (PE), polyvinyl chloride (PV), polyvinylpyrrolidone (PVP), polyethylene terephthalate (PET), etc., which mainly plays a supporting role.
In this embodiment, the nanoparticles of the light emitting layer 40 in the light emitting device described above can be effectively filled into the nano-porous structure formed by the hole transport layer 30, and finally a heterojunction structure is formed. The heterojunction structure is beneficial to reducing potential barrier between the hole transport material and the luminescent layer 40, promoting hole injection from the hole transport layer 30 to the luminescent layer 40, improving hole injection efficiency, and enabling carriers of the luminescent device to be more balanced, thereby effectively improving luminous efficiency and service life of the quantum dot luminescent device.
It should be understood that the light emitting device structure is a normal structure commonly used in quantum dot light emitting diodes, and if it is inverted layer by layer into an inverted structure, the gist of the present application is not violated. For example, a cathode, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and an anode are stacked in this order over a substrate. The quantum dot light emitting diode can be a top emission device or a bottom emission device. The quantum dot light emitting diode provided by the embodiment is described by taking the upright structure as an example, and materials and functions of layers of the inverted structure are not different.
The embodiment of the application also provides a display device comprising the light-emitting device. The display device may be any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television set or an electronic book reader, wherein the smart wearable device may be, for example, a smart bracelet, a smart watch, a Virtual Reality (VR) helmet, etc.
In an embodiment, referring to fig. 4, the present application further provides a method for manufacturing a light emitting device. In this embodiment, the optoelectronic device is a positive quantum dot light emitting diode, and the preparation method includes the following steps:
s301, providing a base plate of an anode substrate.
In this step, the substrate may be referred to as the description of the substrate described above, and will not be repeated here.
S302, a hole transport layer is arranged on the base plate of the anode substrate.
Wherein the hole transport layer comprises the thin film according to the above embodiment, and the thin film is prepared by using the preparation method of the thin film according to any of the above embodiments.
And S303, forming a laminated light-emitting layer and cathode on the hole transport layer.
It can be understood that, when the light emitting device further includes a hole injection layer, step S302 is: and a hole injection layer is arranged on the base plate of the anode substrate, and a hole transport layer is arranged on the hole injection layer.
Specifically, the hole injection layer is disposed on the base plate of the anode substrate. The method specifically comprises the following steps: depositing a hole injection layer on the surface of the treated substrate, wherein the thickness of the hole injection layer is 10-100 nm; the material of the hole injection layer may be referred to as the above description of the material of the hole injection layer and will not be repeated here.
Providing a hole transport layer on the hole injection layer; wherein the hole transport layer comprises the thin film according to the above embodiment, and the thin film is prepared by using the preparation method of the thin film according to any of the above embodiments.
Further, when the light emitting device further includes an electron transport layer, step S303 is: and forming a stacked light emitting layer, electron transport layer and cathode on the hole transport layer.
Specifically, a light-emitting layer is provided on the hole transport layer, and the thickness of the light-emitting layer is 10-60nm.
An electron transport layer is arranged on the light-emitting layer, the material of the electron transport layer is 5% Mg doped nano ZnO, and the thickness of the electron transport layer is 10-60nm.
Disposing a cathode on the electron transport layer, comprising: and placing the substrate on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of cathode material with the thickness of 60-120nm through a mask plate to serve as a cathode, so that the light-emitting device is obtained.
It is understood that the method for manufacturing the light emitting device may further include a packaging step, the packaging material may be acrylic resin or epoxy resin, the packaging may be machine packaging or manual packaging, and ultraviolet curing glue packaging may be used, where the concentration of oxygen and water in the environment where the packaging step is performed is less than 0.1ppm, so as to ensure stability of the optoelectronic device.
In this embodiment, the hole transport layer is formed using a thin film having a nano-porous structure, so that the hole transport layer also has a nano-porous structure, the light emitting layer is prepared on the hole transport layer, and the quantum dot nanoparticles are filled into the nano-pores of the nano-porous structure of the hole transport layer, thereby finally forming a novel heterojunction structure. Compared with a quasi-planar heterojunction structure, the novel heterojunction structure is beneficial to reducing potential barriers between hole transport materials and quantum dot luminescent layers, promoting holes to be injected into the quantum luminescent layers from the hole transport layers, improving hole injection efficiency, enabling carriers in the luminescent device to be more balanced, and accordingly improving efficiency and service life of the luminescent device effectively.
In an embodiment, referring to fig. 5, another method for manufacturing a light emitting device is also provided in the present application. In this embodiment, the optoelectronic device is an inverted quantum dot light emitting diode, and the preparation method includes the following steps:
s401, providing a base plate of a cathode substrate.
In this step, the substrate may be referred to as the description of the substrate described above, and will not be repeated here.
And S402, forming a laminated light-emitting layer, a hole transport layer and an anode on the base plate of the cathode substrate.
It can be understood that, when the light emitting device further includes an electron transport layer, step S402 is: an electron transport layer, a hole transport layer, and an anode are formed on the base plate of the cathode substrate. Further, when the light emitting device further includes a hole injection layer, step S402 is: an electron transport layer, a hole injection layer, and an anode are formed on the base plate of the cathode substrate.
Specifically, an electron transport layer is provided on the base plate of the cathode substrate. The electron transport layer is made of nano ZnO doped with 5% of Mg, and the thickness of the electron transport layer is 10-60nm.
And a luminescent layer is arranged on the electron transport layer, and the thickness of the luminescent layer is 10-60nm.
And providing a hole transport layer on the light-emitting layer, wherein the hole transport layer is formed by a hole transport film, and the hole transport film is prepared by the preparation method of the hole transport film in any embodiment.
And a hole injection layer is arranged on the hole transport layer, and the thickness of the hole injection layer is 10-100 nm.
Disposing an anode on the hole injection layer, comprising: and placing the substrate on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of anode material with the thickness of 60-120nm through a mask plate to serve as an anode, so that the light-emitting device is obtained.
It is understood that the method for manufacturing the light emitting device may further include a packaging step, the packaging material may be acrylic resin or epoxy resin, the packaging may be machine packaging or manual packaging, and ultraviolet curing glue packaging may be used, where the concentration of oxygen and water in the environment where the packaging step is performed is less than 0.1ppm, so as to ensure stability of the optoelectronic device.
In this embodiment, the hole transport layer is formed using a thin film having a nano-porous structure, so that the hole transport layer also has a nano-porous structure, the light emitting layer is prepared on the hole transport layer, and the quantum dot nanoparticles are filled into the nano-pores of the nano-porous structure of the hole transport layer, thereby finally forming a novel heterojunction structure. Compared with a quasi-planar heterojunction structure, the novel heterojunction structure is beneficial to reducing potential barriers between hole transport materials and quantum dot luminescent layers, promoting holes to be injected into the quantum luminescent layers from the hole transport layers, improving hole injection efficiency, enabling carriers in the luminescent device to be more balanced, and accordingly improving efficiency and service life of the luminescent device effectively.
The technical scheme and effect of the present application will be described in detail by the following specific examples and comparative examples, which are only some examples of the present application, and are not intended to limit the present application in any way.
Example 1
The embodiment provides a quantum light emitting diode and a preparation method thereof, wherein the quantum light emitting diode is of a positive structure. The preparation method of the quantum light-emitting diode comprises the following steps:
first, the patterned ITO substrate was subjected to ultrasonic cleaning in acetone, washing liquid, deionized water and isopropyl alcohol in this order, and the ultrasonic cleaning was continued for about 15 minutes in each of the above steps. And placing the ITO into a clean oven for drying after the ultrasonic treatment is finished for standby.
After the ITO substrate is baked, the ITO surface is treated with ultraviolet ozone for 5 minutes to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
Then, a layer of PEDOT: PSS was spin-coated on the surface of the treated ITO substrate, the layer was formed to a thickness of about 30nm, and the substrate was placed on a heating table at 150℃for heating for 30 minutes to remove moisture, which was completed in air, to form a hole injection layer.
Then, adding paraffin into a chlorobenzene solution with the concentration of TFB of 8mg/ml and paraffin with the concentration of 0.1mg/ml, stirring for about half an hour, placing the dried substrate coated with the hole injection layer in a nitrogen atmosphere, spin-coating the prepared TFB chlorobenzene solution containing paraffin on the hole injection layer, placing the substrate in a vacuum bin, vacuumizing for 30 minutes to remove the solvent, and forming the hole transport layer containing the nano-porous structure, wherein the thickness of the hole transport layer is about 20nm.
Next, a blue quantum dot solution was spin-coated on the hole transport layer surface, the solvent being n-octane, and its thickness was about 20nm. After the deposition of this step, the flakes were heated on a heating table at 130 ℃ for 20 minutes to form a quantum dot light-emitting layer.
Subsequently, zn is added 0.95 Mg 0.05 Ethanol solution of O nano-particles is spin-coated on the quantum dot luminescent layer as an electron transport layerThe thickness was about 40nm, and after the deposition was completed, the substrate was heated on a heating table at 80℃for 30 minutes.
And finally, placing the substrate on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of Ag serving as a cathode through a mask plate, wherein the thickness is 100nm, so that the preparation of the quantum dot light emitting diode is completed.
Through test, the maximum brightness of the quantum dot light-emitting diode can reach 7900cd/m 2 The actual measurement T95 is 2.1 hours, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 70.5 hours.
Example 2
The embodiment provides a quantum dot light emitting diode and a preparation method thereof, which are different from the quantum dot light emitting diode of embodiment 1 only in that: the mass ratio of the hole transport material TFB to the paraffin wax is 8:0.25, and the concentration of the added paraffin wax is 0.25mg/ml. After the preparation of the quantum dot light emitting diode is finished, the maximum brightness of the quantum dot light emitting diode can reach 8600cd/m through testing 2 The actual measurement T95 is 2.1 hours, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 81.4 hours.
Example 3
The embodiment provides a quantum dot light emitting diode and a preparation method thereof, which are different from the quantum dot light emitting diode of embodiment 1 only in that: the mass ratio of the hole transport material TFB to the paraffin wax is 8:0.5, and the concentration of the added paraffin wax is 0.5mg/ml. After the preparation of the quantum dot light emitting diode is finished, the maximum brightness of the quantum dot light emitting diode can reach 7660cd/m through testing 2 The actual measurement T95 is 2.1 hours, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 66.9 hours.
Example 4
The embodiment provides a quantum dot light emitting diode and a preparation method thereof, which are different from the quantum dot light emitting diode of embodiment 1 only in that: PVK is adopted as the hole transport material, the concentration is 8mg/ml, the paraffin concentration is still 0.25mg/ml, and the mass ratio of the TFB to the paraffin is 8:0.25. After the preparation of the quantum dot light emitting diode is finished, the maximum brightness of the quantum dot light emitting diode can reach 9500cd/m through testing 2 The actual measurement T95 is 0.3 hour, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 13.8 hours.
Comparative example 1
Comparative example 1 was substantially the same as example 1 except that only 8mg/ml of TFB was used for the hole transport layer, and paraffin wax was not contained. After the preparation of the quantum dot light emitting diode is finished, the maximum brightness of the quantum dot light emitting diode can reach 7600cd/m through testing 2 The actual measurement T95 is 2.1 hours, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 66 hours.
Comparative example 2
Comparative example 2 was substantially the same as comparative example 1 except that 8mg/ml PVK was used for the hole transport layer, and paraffin wax was not contained. After the preparation of the quantum dot light emitting diode is finished, the maximum brightness of the quantum dot light emitting diode can reach 9300cd/m through testing 2 The actual measurement T95 is 0.3 hour, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 13 hours.
Comparative example 3
The embodiment provides a quantum dot light emitting diode and a preparation method thereof, which are different from the quantum dot light emitting diode of embodiment 1 only in that: the mass ratio of the hole transport material TFB to the paraffin wax is 8:0.8, and the concentration of the added paraffin wax is 0.8mg/ml. After the preparation of the quantum dot light emitting diode is finished, the maximum brightness of the quantum dot light emitting diode can reach 6100cd/m through testing 2 The actual measurement T95 is 2.1 hours, and the service life T95@1000nits of the quantum dot light emitting diode is calculated to reach 45.4 hours.
The quantum dot light emitting diodes of examples 1 to 4 and comparative examples 1 to 3 were subjected to performance test, and the results of the performance test are shown in table 1 below. The test index includes maximum luminance (cd/m) 2 ) And T95 (the time it takes for the luminance to decay to 95% of the original luminance).
Table 1:
as can be seen from table 1, embodiments 1 to 4 effectively improve the maximum brightness and the service life of the quantum dot light emitting diode by adding a trace amount of paraffin, so that it is explained that the added trace amount of paraffin can promote phase separation in the process of forming the hole transport layer, so that the hole transport layer forms a nano porous structure, and the nano particles of the quantum dot light emitting layer are filled into the nano porous structure of the hole transport layer to form a heterojunction structure, and the heterojunction structure can improve the hole injection efficiency, so that the carriers of the quantum dot light emitting diode are more balanced, and the light emitting efficiency and the service life of the quantum dot light emitting diode are effectively improved.
Compared with comparative example 1, when the hole transport material is TFB, the maximum brightness and the service life of examples 1-3 are both significantly improved, which means that the heterojunction structure formed by filling the quantum dot nanoparticles into the nano-porous structure of the hole transport layer can improve carrier mobility and promote hole-carrier injection balance.
When the hole transport material was PVK, the maximum brightness and the service life of example 4 were both improved to some extent, compared to comparative example 2, indicating that the heterojunction structure formed after filling the quantum dot nanoparticles, even though the hole transport material was replaced, by the nanoporous structure formed by paraffin wax, improved the carrier mobility to some extent, and promoted the hole-carrier injection balance.
Compared with comparative example 3, when the hole transport material is TFB, the maximum brightness and the service life of examples 1-3 are both improved to some extent, which means that the paraffin concentration is within the range agreed by the present application, and the quantum dot nanoparticles are filled into the heterojunction structure formed in the nano-porous structure of the hole transport layer, which can improve the carrier mobility and promote the hole-carrier injection balance.
In summary, according to the quantum dot light emitting diode disclosed by the application, a nano porous structure is formed in the hole transport layer by adding a trace amount of paraffin into the hole transport layer, and nano particles of the quantum dot light emitting layer can be effectively filled into the nano porous structure formed in the hole transport layer to form a heterojunction structure. The heterojunction structure is beneficial to reducing potential barrier between the hole transport material and the quantum dot luminescent layer, promoting hole injection from the hole transport layer to the quantum dot luminescent layer, improving hole injection efficiency, and enabling carriers of the quantum dot luminescent diode to be more balanced, thereby effectively improving luminescent efficiency and service life of the quantum dot luminescent diode.
The thin film, the preparation method thereof, the light-emitting device, the preparation method thereof and the display device provided by the embodiment of the application are described in detail, and specific examples are applied to illustrate the principle and the implementation mode of the application, and the description of the above examples is only used for helping to understand the method and the core idea of the application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (14)
1. A method of producing a film, comprising:
providing a first solution comprising an organic solvent, paraffin wax, and a hole transporting material;
providing a substrate, and arranging the first solution on the substrate to obtain a film.
2. The method of preparing according to claim 1, wherein the providing a first solution comprises:
mixing the hole transport material with the organic solvent to dissolve the hole transport material and form a mixed solution;
and adding paraffin into the mixed solution to form the first solution.
3. The method according to claim 1, wherein the hole transport material is at least one selected from the group consisting of PSS, TAPC, doped graphene, undoped graphene and C60, or at least one selected from the group consisting of doped or undoped NiO, moOx, WOx and CuO; and/or the organic solvent is selected from at least one of toluene, chlorobenzene, chloroform and dimethyl sulfoxide.
4. The method according to claim 1, wherein the mass ratio of the hole transport material to paraffin wax is 8 (0.1 to 0.5).
5. The method according to claim 1, wherein the concentration of the paraffin wax in the first solution is 0.1mg/ml to 0.5mg/ml; and/or the concentration of the hole transport material is 5mg/ml to 8mg/ml.
6. The method of claim 1, wherein the providing a substrate, disposing the first solution on the substrate, and obtaining a film; comprising the following steps:
providing a substrate, placing the substrate in an inert gas atmosphere, arranging the first solution on the substrate, and performing vacuum treatment to form the film, wherein the film has a nano-porous structure.
7. The method according to claim 1, wherein the film has a thickness of 10 to 100nm.
8. A film produced by the method of producing a film according to any one of claims 1 to 7.
9. A light-emitting device, characterized in that the light-emitting device comprises an anode, a hole transport layer, a light-emitting layer, and a cathode, which are stacked; wherein the hole transport layer comprises the film of claim 8.
10. The light-emitting device according to claim 9, wherein the material of the light-emitting layer is at least one selected from the group consisting of single-structure quantum dots and core-shell structure quantum dots, the single-structure quantum dots are at least one selected from the group consisting of group II-VI compounds, group III-V compounds, and group I-III-VI compounds, and the group II-VI compounds are selected from the group consisting of CdSe, cdS, cdTe, znSe, znS, cdTe, znTe, cdZnS, cdZnSe, cdZnTeAt least one of ZnSeS, znSeTe, znTeS, cdSeS, cdSeTe, cdTeS, cdZnSeS, cdZnSeTe and CdZnSTe, the III-V compound is selected from at least one of InP, inAs, gaP, gaAs, gaSb, alN, alP, inAsP, inNP, inNSb, gaAlNP and InAlNP, and the I-III-VI compound is selected from CuInS 2 、CuInSe 2 AgInS 2 At least one of (a) and (b); the core of the quantum dot with the core-shell structure is selected from any one of the quantum dots with the single structure, and the shell material of the quantum dot with the core-shell structure is selected from at least one of CdS, cdTe, cdSeTe, cdZnSe, cdZnS, cdSeS, znSe, znSeS and ZnS; and/or
The anode material is selected from one or more of metal, carbon material and metal oxide, and one or more of metal Al, ag, cu, mo, au, ba, ca and Mg; the carbon material is selected from one or more of graphite, carbon nano tube, graphene and carbon fiber; the metal oxide comprises one or more of doped or undoped metal oxide, ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, wherein the composite electrode is selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following; and/or the number of the groups of groups,
the cathode material is selected from one or more of metal, carbon material and metal oxide, and the metal is selected from one or more of Al, ag, cu, mo, au, ba, ca and Mg; the carbon material is selected from one or more of graphite, carbon nano tube, graphene and carbon fiber; the metal oxide comprises one or more of doped or undoped metal oxide, ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or a composite electrode comprising doped or undoped transparent metal oxide and metal sandwiched therebetween, wherein the composite electrode is selected from AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, ti O 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 TiO 2 /Al/TiO 2 One or more of the following.
11. The light-emitting device according to claim 9, further comprising a hole injection layer between the hole transport layer and the anode; and/or the material of the hole injection layer is selected from one or more of PEDOT PSS, MCC, cuPc, F-TCNQ, HATCN, transition metal oxide and transition metal chalcogenide.
12. The light-emitting device according to claim 8, further comprising an electron transport layer between the light-emitting layer and the cathode; and/or the material of the electron transport layer is selected from at least one of nano zinc oxide, nano titanium oxide, nano tin oxide and nano barium titanate, and the element doping nano oxide electron transport material thereof, wherein the doping element is selected from at least one of aluminum element, magnesium element, lithium element, manganese element, yttrium element, lanthanum element, copper element, nickel element, zirconium element, cerium element and gadolinium element.
13. A method of manufacturing a light emitting device, the method comprising:
providing a base plate of an anode substrate;
A hole transport layer is arranged on the base plate of the anode substrate;
forming a stacked light emitting layer and cathode on the hole transport layer;
wherein the hole transport layer comprises the film of claim 8;
or,
providing a base plate of a cathode substrate;
forming a light emitting layer, a hole transporting layer, and an anode, which are stacked, on a base plate of the cathode substrate;
wherein the hole transport layer comprises the film of claim 8.
14. A display device, characterized in that the display device comprises a light emitting device according to any one of claims 9 to 12.
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| CN117222287A (en) * | 2023-11-07 | 2023-12-12 | 惠科股份有限公司 | Light-emitting unit, manufacturing method of display panel and display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117222287A (en) * | 2023-11-07 | 2023-12-12 | 惠科股份有限公司 | Light-emitting unit, manufacturing method of display panel and display panel |
| CN117222287B (en) * | 2023-11-07 | 2024-03-15 | 惠科股份有限公司 | Light-emitting unit, manufacturing method of display panel and display panel |
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