CN112614956A - Inverted QLED device, display device and preparation method - Google Patents
Inverted QLED device, display device and preparation method Download PDFInfo
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode
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Abstract
The invention discloses an inverted QLED device, a display device and a preparation method, wherein the inverted QLED device comprises an electronic functional layer, an electronic modulation layer and a quantum dot light-emitting layer which are sequentially stacked, the electronic functional layer is used for injecting and/or transmitting electrons, the electronic functional layer comprises a first electronic material, the electronic modulation layer comprises a second electronic material, the first electronic material and the second electronic material are both n-type metal oxides, and the oxygen vacancy concentration of the second electronic material is lower than that of the first electronic material. The electronic modulation layer can protect the quantum dot light-emitting layer to maintain the original fluorescence efficiency, or ensure that the fluorescence efficiency of the quantum dot light-emitting layer is not obviously reduced, can reduce the leakage current of the inverted QLED device, and improves the light-emitting efficiency.
Description
Technical Field
The invention relates to the field of QLED, in particular to an inverted QLED device, a display device and a preparation method of the inverted QLED device.
Background
The quantum dot is a special material limited to the nanometer level in three dimensions, and the remarkable quantum confinement effect enables the quantum dot to have a plurality of unique nanometer properties: the emission wavelength is continuously adjustable, the light-emitting wavelength is narrow, the absorption spectrum is wide, the light-emitting intensity is high, the fluorescence lifetime is long, the biocompatibility is good, and the like. The characteristics enable the quantum dots to have wide application prospects in the fields of biomarkers, flat panel display, solid-state lighting and photovoltaic solar lamps. The QLED (Quantum Dot Light Emitting Diodes) is a Quantum Dot thin layer made of Quantum dots, and the Quantum Dot thin layer is placed in a backlight module of a Liquid Crystal Display (LCD), so that compared with a display without a Quantum Dot thin layer, the loss of backlight brightness and the color crosstalk of RBG (red, green, blue) color filters can be reduced, and further, a better backlight utilization rate is obtained and the display color gamut space is improved.
In the inverted QLED device, the electronic function layer for injecting and/or transmitting electrons is made of n-type metal oxide, and the inverted QLED device is preferably made of the electronic function layer by adopting a magnetron sputtering method, but the magnetron sputtering method easily causes overlarge leakage current of the inverted QLED device, and reduces the luminous efficiency of the inverted QLED device.
Disclosure of Invention
The invention mainly aims to provide an inverted QLED device, a display device and a preparation method, and aims to solve the problems of overlarge leakage current and low luminous efficiency of the inverted QLED device.
In order to achieve the above object, the present invention provides an inverted QLED device, including an electronic functional layer, an electronic modulation layer and a quantum dot light emitting layer, which are sequentially stacked, wherein the electronic functional layer is used for injecting and/or transmitting electrons, the electronic functional layer includes a first electronic material, the electronic modulation layer includes a second electronic material, the first electronic material and the second electronic material are both n-type metal oxides, and the oxygen vacancy concentration of the second electronic material is lower than that of the first electronic material.
Preferably, the first electronic material is ZnO or SnO2、In2O3-ZnO, MgO-ZnO or Al2O3-ZnO, the second electronic material being ZrO2、HfO2、Ta2O5、Nb2O5、GeO2Or B2O3。
Preferably, the second electronic material has an oxygen vacancy concentration of less than 1014cm-3。
Preferably, the electron function layer is a single-layer electron injection and electron transport layer;
alternatively, the electron function layer is an electron injection layer and an electron transport layer stacked in this order, and the electron transport layer is provided between the electron injection layer and the electron modulation layer.
Preferably, the electronic modulation layer further comprises a first electronic material, and a molar ratio of the first electronic material to the second electronic material in the electronic modulation layer is 1:99 to 99: 1.
Preferably, the thickness of the electronic function layer is 10 to 200nm, and the thickness of the electronic modulation layer is 5 to 50 nm.
Preferably, the quantum dots of the quantum dot light emitting layer are CdSe/ZnSe, CdSe/CdS/ZnS, ZnCdSeS/ZnS, ZnCdS/ZnS or ZnSe/ZnS.
Preferably, the inverted QLED device further includes a hole transport layer and a hole injection layer, the quantum dot light-emitting layer, the hole transport layer and the hole injection layer are sequentially stacked, and the hole transport layer is made of CDBP (4,4' -bis (9-carbazolyl) -2,2' -dimethylbiphenyl), mCBP (3, 3-bis (carbazolyl) biphenyl), CBP (4,4' -bis (9-carbazole) biphenyl), mCP (2, 6-dimethoxyphenol), TCTA (4,4',4 ″ -tris (carbazol-9-yl) triphenylamine), TAPC (4,4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline)]) NPB (N, N ' -diphenyl-N, N ' - (1-naphthyl) -1,1' -biphenyl-4, 4' -diamine) or alpha-NPD (N, N ' -diphenyl-N, N ' - (1-naphthyl) -2,2' -diamine), and the material of the hole injection layer is HAT-CN (2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazatriphenylene) or F4-TCNQ (2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane), MoO3、V2O5、WO3Or ReO3。
In addition, the invention also provides a preparation method of the inverted QLED device, which comprises the following steps:
depositing a first electronic material to a cathode by adopting a magnetron sputtering method to form an electronic functional layer;
depositing a second electronic material to the electronic function layer by adopting a magnetron sputtering method to form an electronic modulation layer;
depositing a quantum dot light-emitting layer on the electronic modulation layer by adopting a chemical solution deposition method;
wherein the first electronic material and the second electronic material are both n-type metal oxides, and the second electronic material has an oxygen vacancy concentration lower than that of the first electronic material.
Furthermore, the invention also provides a display device comprising the inverted QLED device or the inverted QLED device prepared by the method.
In the technical scheme of the invention, the inverted QLED device comprises an electronic functional layer, an electronic modulation layer and a quantum dot light emitting layer which are sequentially stacked, wherein the electronic functional layer is used for injecting and/or transmitting electrons, the electronic functional layer comprises a first electronic material, the electronic modulation layer comprises a second electronic material, the first electronic material and the second electronic material are both n-type metal oxides, the oxygen vacancy concentration of the second electronic material is lower than that of the first electronic material, and the oxygen atoms are not easy to separate due to the fact that the metal-oxygen chemical bond of the second electronic material is strong, so that the quantum dot light emitting layer can be protected to maintain the original fluorescence efficiency, or the fluorescence efficiency of the quantum dot light emitting layer is not obviously reduced, the leakage current of the inverted QLED device can be reduced, and the light emitting efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of an inverted QLED device according to an embodiment of the present invention;
fig. 2 is a schematic view of inverted QLED devices of embodiments 2 to 6 of the present invention;
FIG. 3 is a schematic diagram of an inverted QLED device according to another embodiment of the invention;
fig. 4 is a graph of current density versus voltage (J-V) for inverted QLED devices of examples 1 and 2 of the present invention;
fig. 5 is a graph of luminance versus voltage (L-V) of inverted QLED devices of examples 1 and 2 of the present invention;
fig. 6 is a graph of current efficiency versus current density (CE-J) for inverted QLED devices of examples 1 and 2 of the present invention.
The reference numbers illustrate:
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides an inverted QLED device, as shown in FIG. 1, which comprises an electronic function layer 30, an electronic modulation layer 4 and a quantum dot light-emitting layer 5 which are sequentially stacked, wherein the electronic function layer 30 is used for injecting and/or transmitting electrons, the electronic function layer 30 comprises a first electronic material, the electronic modulation layer 4 comprises a second electronic material, the first electronic material and the second electronic material are both n-type metal oxides, and the oxygen vacancy concentration of the second electronic material is lower than that of the first electronic material.
The n-type metal oxide is a type of metal oxide that conducts electric charges by taking electrons as carriers, and since the second electronic material of the electronic modulation material also belongs to the n-type metal oxide, the electronic modulation layer 4 also has a function of transporting electrons. The QLED device of this embodiment is an inverted QLED device, the electronic functional layer 30 for injecting and/or transmitting electrons is prepared by a magnetron sputtering method, because the material of the electronic functional layer 30 prepared by the magnetron sputtering method has a large number of oxygen vacancies, on one hand, it easily causes the fluorescence quenching of the quantum dot light-emitting layer, on the other hand, it can cause the QLED to have a large leakage current, and the metal-oxygen chemical bond of the second electronic material has a strong energy, so that the oxygen atom is not easily separated, because the oxygen vacancy concentration of the second electronic material is low, the quantum dot light-emitting layer can be protected to maintain the original fluorescence efficiency, or it is ensured that the fluorescence efficiency of the quantum dot light-emitting layer is not significantly reduced, and the leakage current of the QLED can be reduced. In summary, in this embodiment, the electronic modulation layer 4 is disposed between the conventional electronic functional layer 30 and the quantum dot light-emitting layer 5, and the electron concentration at the interface is adjusted, so that on one hand, the light emission of the quantum dots is protected, on the other hand, the leakage current of the QLED is reduced, and the performance of the inverted QLED is improved.
Without loss of generality, the inverted QLED device of the present embodiment further includes a substrate, a cathode, a hole transport layer, a hole injection layer, and an anode, wherein the substrate, the cathode, the electron functional layer, the electron modulation layer, the quantum dot light emitting layer, the hole transport layer, the hole injection layer, and the anode are sequentially stacked. The substrate may be rigid glass or a flexible PI Film (Polyimide Film). The anode material can be high work function metal and metal oxide, such as indium tin oxide, indium zinc oxide or simple substance gold. The hole transport layer is made of CDBP, mCBP, CBP, mCP, TCTA, TAPC, NPB or alpha-NPD, and the hole injection layer is made of HAT-CN, F4-TCNQ、MoO3、V2O5、WO3Or ReO3. The cathode material can be selected from low work function metal or its alloy, such as Al, Ag or Mg-Ag alloy.
In one embodiment, as shown in fig. 2, the electron function layer 30 is a single electron injection and electron transport layer 3, which can inject or transport electrons simultaneously; alternatively, as shown in fig. 3, the electron functional layer is an electron injection layer 31 and an electron transport layer 32 which are sequentially stacked, the electron transport layer 32 is disposed between the electron injection layer 31 and the electron modulation layer 4, the electron injection layer 31 is used for injecting electrons, the electron transport layer 32 is used for transporting electrons, and the electron functional layer 30 has both functions of injecting and transporting electrons. In other embodiments, the electron functional layer 30 may also be a single electron injection layer 31 or a single electron transport layer 32, i.e. the electron functional layer is only used for injecting electrons or transporting electrons. As shown in fig. 2, the electron functional layer is preferably a single-layer electron injection and transport layer 3, which can ensure both the function of injecting electrons and transporting electrons, and can reduce the thickness of the electron functional layer.
Preferably, the first electronic material is ZnO or SnO2、In2O3-ZnO(In2O3And ZnO), MgO-ZnO (a composite of MgO and ZnO), or Al2O3-ZnO(Al2O3And ZnO) and the second electronic material is ZrO2、HfO2、Ta2O5、Nb2O5、GeO2Or B2O3. The first electronic material is suitable for magnetron sputtering and has the functions of injecting electrons and transmitting electrons, but the oxygen vacancy concentration is high, the electronic modulation layer 4 is arranged between the electronic function layer 30 and the quantum dot light-emitting layer 5, the electronic modulation layer 4 is formed by the second electronic material, because the second electronic material has strong metal-oxygen chemical bond energy, oxygen atoms are not easy to be separated, and because the oxygen vacancy concentration of the second electronic material is low, the quantum dot light-emitting layer 5 can be protected to maintain the original fluorescence efficiency, and the leakage current of the QLED can be reduced.
Specifically, the second electronic material has an oxygen vacancy concentration of less than 1014cm-3. The first electronic material typically has an oxygen vacancy concentration of greater than 1018cm-3Compared with the first electronic material, the oxygen vacancy concentration of the second electronic material of the electronic modulation layer 4 is very small, so that the fluorescence efficiency of the quantum dots can be ensured not to be reduced, and the leakage current of the QLED can be reduced.
In a preferred embodiment, the electronic modulation layer 4 further comprises a first electronic material, and the molar ratio of the first electronic material to the second electronic material in the electronic modulation layer 4 is 1:99 to 99: 1. That is, the electron modulation layer 4 of the present embodiment is a mixture of the first electronic material and the second electronic material, and the electron concentration of the electron modulation layer 4 can be flexibly adjusted.
If the thickness of the electron functional layer 30 is too large, electron injection and/or electron transport are affected, and the thickness of the electron functional layer 30 is preferably 10 to 200 nm. The thickness of the electron modulation layer 4 may be 5 to 25nm, and if the electron modulation layer 4 is a mixture of the first electronic material and the second electronic material, the thickness may be 5 to 50 nm. The thickness of the electronic function layer 30 and the electronic modulation layer 4 is moderate, so that the characteristics of the electronic function layer and the electronic modulation layer can be ensured, and the injection or transmission of electrons cannot be influenced.
Preferably, the quantum dots of the quantum dot light emitting layer 5 are CdSe/ZnSe, CdSe/CdS/ZnS, ZnCdSeS/ZnS, ZnCdS/ZnS or ZnSe/ZnS. The CdSe/ZnSe, CdSe/CdS/ZnS, ZnCdSeS/ZnS, ZnCdS/ZnS and ZnSe/ZnS are core-shell quantum dots, for example, the CdSe/ZnSe is a core-shell quantum dot with a CdSe core structure and the ZnSe core is a shell structure; the CdSe/CdS/ZnS is a core-shell quantum dot with a CdSe core structure and CdS and ZnS double-shell structures.
In addition, the invention also provides a preparation method of the QLED device, which comprises the following steps:
depositing a first electronic material to the cathode 2, forming an electronically functional layer 30;
depositing a second electronic material to the electronic function layer by adopting a magnetron sputtering method to form an electronic modulation layer 4;
depositing quantum dot light emitting layer 5 on electronic modulation layer 4;
wherein the first electronic material and the second electronic material are both n-type metal oxides, and the second electronic material has an oxygen vacancy concentration lower than that of the first electronic material.
Magnetron sputtering is one type of physical vapor deposition, and increases the sputtering rate by introducing a magnetic field at the surface of a target cathode, and increasing the plasma density by confinement of charged particles by the magnetic field. The working principle of magnetron sputtering is that electrons collide with argon atoms in the process of flying to a substrate under the action of an electric field, so that the electrons are ionized to generate argon positive ions and new electrons, the new electrons fly to the substrate, the argon ions accelerate to fly to a cathode target under the action of the electric field and bombard the surface of the target at high energy, and the target is sputtered. In the sputtering particles, neutral target atoms or molecules are deposited on a substrate to form a thin film, and generated secondary electrons are subjected to an electric field and a magnetic field to generate drift, so that the energy of the secondary electrons is depleted along with the increase of the number of collisions, the secondary electrons gradually leave the surface of the target, and the secondary electrons are finally deposited on the substrate under the action of the electric field. If the electronic functional layer is prepared by adopting ink-jet printing, the nano-particle ink is unstable, a nozzle is easy to block, and the surface roughness of the film after film formation is larger. The electronic function layer 30 can also be deposited by adopting a magnetron sputtering method, and the quantum dot light-emitting layer can be prepared by adopting a chemical solution deposition method. In the embodiment, the electronic function layer 30 and the electronic modulation layer 4 are prepared by a magnetron sputtering method, the technology is mature, mass production is facilitated, the surface is smooth after film forming, the electronic modulation layer 4 of the embodiment is positioned between the electronic function layer 30 and the quantum dot light emitting layer 5, the second electronic material has strong metal-oxygen chemical bond energy, so that oxygen atoms are not easy to separate, the oxygen vacancy concentration of the second electronic material is low, the quantum dot light emitting layer 5 can be protected to maintain the original fluorescence efficiency, or the fluorescence efficiency of the quantum dot light emitting layer 5 is ensured not to be obviously low, and the leakage current of the QLED can be reduced.
Furthermore, the invention also provides display equipment comprising the inverted QLED device or the inverted QLED device prepared by the method. The specific structure of the inverted QLED device refers to the above embodiments, and since the display device adopts all technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here.
Example 1 (comparative example)
The inverted QLED device of the present embodiment includes a substrate 1, a cathode 2, an electron injection and electron transport layer 3, a quantum dot light emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, which are sequentially stacked.
The preparation method of the inverted QLED device of the present embodiment includes the steps of: depositing a transparent conductive indium tin oxide cathode 2 with the thickness of 50nm on a glass substrate 1, and adopting a magnetron sputtering method to carry out ZnO is deposited on the cathode 2 to form an electron injection and electron transport layer 3 with the thickness of 90nm, then CdSe/ZnSe quantum dot ink is coated on the electron injection and electron transport layer 3 in a rotating mode by adopting a chemical solution deposition method to obtain a quantum dot light emitting layer 5 with the thickness of 15nm, TCTA is deposited on the quantum dot light emitting layer 5 by adopting an evaporation method to form a hole transport layer 6 with the thickness of 40nm, and MoO is deposited on the hole transport layer 6 by continuously adopting the evaporation method3A hole injection layer 7 with a thickness of 10nm was formed, and finally Al was deposited on the hole injection layer 7 by evaporation to form an anode 8 with a thickness of 120 nm.
Example 2
The inverted QLED device of the present embodiment includes a substrate 1, a cathode 2, an electron injection and electron transport layer 3, an electron modulation layer 4, a quantum dot light emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, which are sequentially stacked.
The preparation method of the inverted QLED device of the present embodiment includes the steps of: depositing a transparent conductive indium tin oxide cathode 2 with the thickness of 50nm on a glass substrate 1, depositing ZnO on the cathode 2 by adopting a magnetron sputtering method to form an electron injection and electron transmission layer 3 with the thickness of 75nm, and depositing HfO by adopting the magnetron sputtering method2Depositing on the electron injection and electron transport layer 3 to form an electron modulation layer 4 with the thickness of 15nm, then spin-coating CdSe/ZnSe quantum dot ink on the electron injection and electron transport layer 3 by adopting a chemical solution deposition method to obtain a quantum dot light emitting layer 5 with the thickness of 15nm, depositing TCTA on the quantum dot light emitting layer 5 by adopting an evaporation method to form a hole transport layer 6 with the thickness of 40nm, and continuously depositing MoO on the hole transport layer 6 by adopting the evaporation method3A hole injection layer 7 with a thickness of 10nm was formed, and finally Al was deposited on the hole injection layer 7 by evaporation to form an anode 8 with a thickness of 120 nm.
Example 3
The inverted QLED device of the present embodiment includes a substrate 1, a cathode 2, an electron injection and electron transport layer 3, an electron modulation layer 4, a quantum dot light emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, which are sequentially stacked.
The preparation method of the inverted QLED device of the present embodiment includes the steps of: on a glass substrateDepositing a transparent conductive indium tin oxide cathode 2 with the thickness of 50nm on the plate 1, depositing ZnO on the cathode 2 by adopting a magnetron sputtering method to form an electron injection and electron transmission layer 3 with the thickness of 75nm, and depositing Nb by adopting the magnetron sputtering method2O5Depositing on the electron injection and electron transport layer 3 to form an electron modulation layer 4 with the thickness of 15nm, then spin-coating CdSe/ZnSe quantum dot ink on the electron injection and electron transport layer 3 by adopting a chemical solution deposition method to obtain a quantum dot light emitting layer 5 with the thickness of 15nm, depositing TCTA on the quantum dot light emitting layer 5 by adopting an evaporation method to form a hole transport layer 6 with the thickness of 40nm, and continuously depositing MoO on the hole transport layer 6 by adopting the evaporation method3A hole injection layer 7 with a thickness of 10nm was formed, and finally Al was deposited on the hole injection layer 7 by evaporation to form an anode 8 with a thickness of 120 nm.
Example 4
The inverted QLED device of the present embodiment includes a substrate 1, a cathode 2, an electron injection and electron transport layer 3, an electron modulation layer 4, a quantum dot light emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, which are sequentially stacked.
The preparation method of the inverted QLED device of the present embodiment includes the steps of: depositing a transparent conductive indium tin oxide cathode 2 with the thickness of 50nm on a glass substrate 1, depositing ZnO on the cathode 2 by adopting a magnetron sputtering method to form an electron injection and electron transmission layer 3 with the thickness of 70nm, and depositing HfO by adopting the magnetron sputtering method2Depositing a mixture with the mol ratio of ZnO to ZnO being 7:3 on the electron injection and electron transport layer 3 to form an electron modulation layer 4 with the thickness of 20nm, then spin-coating CdSe/ZnSe quantum dot ink on the electron injection and electron transport layer 3 by adopting a chemical solution deposition method to obtain a quantum dot light-emitting layer 5 with the thickness of 15nm, depositing TCTA on the quantum dot light-emitting layer 5 by adopting an evaporation method to form a hole transport layer 6 with the thickness of 40nm, and continuously depositing MoO on the hole transport layer 6 by adopting the evaporation method3A hole injection layer 7 with a thickness of 10nm was formed, and finally Al was deposited on the hole injection layer 7 by evaporation to form an anode 8 with a thickness of 120 nm.
Example 5
The inverted QLED device of the present embodiment includes a substrate 1, a cathode 2, an electron injection and electron transport layer 3, an electron modulation layer 4, a quantum dot light emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, which are sequentially stacked.
The preparation method of the inverted QLED device of the present embodiment includes the steps of: depositing a transparent conductive indium tin oxide cathode 2 with the thickness of 50nm on a glass substrate 1, depositing ZnO on the cathode 2 by adopting a magnetron sputtering method to form an electron injection and electron transmission layer 3 with the thickness of 70nm, and depositing HfO by adopting the magnetron sputtering method2Depositing a mixture with the molar ratio of ZnO to ZnO of 5:5 on the electron injection and electron transport layer 3 to form an electron modulation layer 4 with the thickness of 20nm, then spin-coating CdSe/ZnSe quantum dot ink on the electron injection and electron transport layer 3 by adopting a chemical solution deposition method to obtain a quantum dot light emitting layer 5 with the thickness of 15nm, depositing TCTA on the quantum dot light emitting layer 5 by adopting an evaporation method to form a hole transport layer 6 with the thickness of 40nm, and continuously depositing MoO on the hole transport layer 6 by adopting the evaporation method3A hole injection layer 7 with a thickness of 10nm was formed, and finally Al was deposited on the hole injection layer 7 by evaporation to form an anode 8 with a thickness of 120 nm.
Example 6
The inverted QLED device of the present embodiment includes a substrate 1, a cathode 2, an electron injection and electron transport layer 3, an electron modulation layer 4, a quantum dot light emitting layer 5, a hole transport layer 6, a hole injection layer 7, and an anode 8, which are sequentially stacked.
The preparation method of the inverted QLED device of the present embodiment includes the steps of: depositing a transparent conductive indium tin oxide cathode 2 with the thickness of 50nm on a glass substrate 1, depositing ZnO on the cathode 2 by adopting a magnetron sputtering method to form an electron injection and electron transmission layer 3 with the thickness of 70nm, and depositing HfO by adopting the magnetron sputtering method2Depositing a mixture with the molar ratio of ZnO to ZnO of 3:7 on the electron injection and electron transport layer 3 to form an electron modulation layer 4 with the thickness of 20nm, then spin-coating CdSe/ZnSe quantum dot ink on the electron injection and electron transport layer 3 by adopting a chemical solution deposition method to obtain a quantum dot light-emitting layer 5 with the thickness of 15nm, depositing TCTA on the quantum dot light-emitting layer 5 by adopting an evaporation method to form a hole transport layer 6 with the thickness of 40nm, and continuously depositing TCTA on the hole transport layer 6 by adopting the evaporation methodAccumulated MoO3A hole injection layer 7 with a thickness of 10nm was formed, and finally Al was deposited on the hole injection layer 7 by evaporation to form an anode 8 with a thickness of 120 nm.
As shown in fig. 4, the current density (J) of example 2 is significantly reduced under low voltage (V) conditions, indicating that the electronic modulation layer 4 can reduce the leakage current of the QLED device. As can be understood from the results of fig. 3, as the voltage (V) increases, the luminance (L) of the QLED device of example 2 rapidly increases and gradually becomes greater than that of the QLED device of example 1. As can be understood from the results of fig. 6, the Current Efficiency (CE) of the QLED device of example 2 is significantly greater than that of the QLED device of example 1. Fig. 5 and 6 illustrate that the electronic modulation layer 4 can effectively protect the light emitting efficiency of the quantum dots, thereby significantly improving the efficiency of the QLED device. Since the curves of current density-voltage, luminance-voltage, and current efficiency-current density of the QLED devices of examples 3 to 6 are not much different from those of example 2, the graphs of examples 3 to 6 are omitted in order to compare with example 1 in the same sub-figure more clearly.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. An inverted QLED device is characterized by comprising an electronic function layer, an electronic modulation layer and a quantum dot light emitting layer which are sequentially stacked, wherein the electronic function layer is used for injecting and/or transmitting electrons, the electronic function layer comprises a first electronic material, the electronic modulation layer comprises a second electronic material, the first electronic material and the second electronic material are both n-type metal oxides, and the oxygen vacancy concentration of the second electronic material is lower than that of the first electronic material.
2. The inverted QLED device of claim 1, wherein the first electronic material is ZnO, SnO2、In2O3-ZnO, MgO-ZnO or Al2O3-ZnO, the second electronic material being ZrO2、HfO2、Ta2O5、Nb2O5、GeO2Or B2O3。
3. The inverted QLED device of claim 1, wherein the second electronic material has an oxygen vacancy concentration of less than 1014cm-3。
4. The inverted QLED device of claim 1, wherein the electronically functional layer is prepared by magnetron sputtering.
5. The inverted QLED device of claim 1, wherein the electron modulation layer further comprises a first electronic material, and a molar ratio of the first electronic material to the second electronic material in the electron modulation layer is from 1:99 to 99: 1.
6. The inverted QLED device of claim 1, wherein the thickness of the electronically functional layer is 10 to 200nm and the thickness of the electronically modulated layer is 5 to 50 nm.
7. The inverted QLED device of claim 1, wherein the quantum dots of the quantum dot light emitting layer are CdSe/ZnSe, CdSe/CdS/ZnS, ZnCdSeS/ZnS, ZnCdS/ZnS, or ZnSe/ZnS.
8. The inverted QLED device of claim 1, further comprising a substrate, a cathode, a hole transport layer, a hole injection layer and an anode, wherein the substrate, the cathode, an electronic functional layer, an electronic modulation layer, a quantum dot light emitting layer, the hole transport layer, the hole injection layer and the anode are sequentially stacked, the hole transport layer is made of CDBP, mCBP, CBP, mCP, TCTA, TAPC, NPB or alpha-NPD, and the hole injection layer is made of HAT-CN, F-NPD4-TCNQ、MoO3、V2O5、WO3Or ReO3。
9. A preparation method of an inverted QLED device is characterized by comprising the following steps:
depositing a first electronic material to a cathode by adopting a magnetron sputtering method to form an electronic functional layer;
depositing a second electronic material to the electronic functional layer to form an electronic modulation layer;
depositing a quantum dot light emitting layer on the electron modulation layer;
wherein the first electronic material and the second electronic material are both n-type metal oxides, and the second electronic material has an oxygen vacancy concentration lower than that of the first electronic material.
10. A display device comprising an inverted QLED device according to any one of claims 1 to 8 or an inverted QLED device prepared by the method of claim 9.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284461A (en) * | 2021-12-24 | 2022-04-05 | 合肥福纳科技有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| WO2023092537A1 (en) * | 2021-11-29 | 2023-06-01 | 京东方科技集团股份有限公司 | Light-emitting device and method for manufacturing same, and display substrate and display apparatus |
| WO2024000483A1 (en) * | 2022-06-30 | 2024-01-04 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130134403A1 (en) * | 2010-08-06 | 2013-05-30 | Panasonic Corporation | Organic electroluminescence element |
| CN106374051A (en) * | 2016-11-15 | 2017-02-01 | Tcl集团股份有限公司 | QLED, manufacturing method therefor and illuminating device |
| CN107910449A (en) * | 2017-11-16 | 2018-04-13 | 信利（惠州）智能显示有限公司 | A kind of light emitting diode with quantum dots and preparation method thereof |
-
2020
- 2020-12-17 CN CN202011500558.8A patent/CN112614956A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130134403A1 (en) * | 2010-08-06 | 2013-05-30 | Panasonic Corporation | Organic electroluminescence element |
| CN106374051A (en) * | 2016-11-15 | 2017-02-01 | Tcl集团股份有限公司 | QLED, manufacturing method therefor and illuminating device |
| CN107910449A (en) * | 2017-11-16 | 2018-04-13 | 信利（惠州）智能显示有限公司 | A kind of light emitting diode with quantum dots and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023092537A1 (en) * | 2021-11-29 | 2023-06-01 | 京东方科技集团股份有限公司 | Light-emitting device and method for manufacturing same, and display substrate and display apparatus |
| CN114284461A (en) * | 2021-12-24 | 2022-04-05 | 合肥福纳科技有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN114284461B (en) * | 2021-12-24 | 2024-03-19 | 江苏穿越光电科技有限公司 | Quantum dot light emitting diode and preparation method thereof |
| WO2024000483A1 (en) * | 2022-06-30 | 2024-01-04 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display apparatus |
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