CN112736127B - Gallium nitride-based HEMT radio frequency device and manufacturing method thereof - Google Patents
Gallium nitride-based HEMT radio frequency device and manufacturing method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 68
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
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Abstract
The invention discloses a gallium nitride-based HEMT radio frequency device and a manufacturing method thereof, wherein the device comprises a semiconductor substrate, a channel layer and a barrier layer which are stacked from bottom to top; the grid electrode is arranged on the stepped groove of the barrier layer, the height of the grid electrode is greater than the upper surface of the barrier layer, a dielectric layer is arranged among the source electrode, the drain electrode and the grid electrode, the step surfaces sequentially descend or ascend along the height of the step surfaces in the width direction of the grid electrode, and the heights of different step surfaces are different. According to the device, the grids with different heights are formed through a semiconductor manufacturing process to form grids in different areas, and the grids in different areas have different turn-off voltages, so that the transconductance gm presents a flat shape, the linearity of the gallium nitride-based HEMT radio frequency device is improved, the turn-off voltage is controlled, and the linearity of the radio frequency device is improved.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a gallium nitride-based HEMT radio frequency device and a manufacturing method thereof.
Background
The 5G communication technology is a latest generation cellular mobile communication technology, and is an extension behind 4G (LTE-a, wiMax), 3G (UMTS, LTE), and 2G (GSM) systems. The 5G communication technology can be widely applied to the fields of smart homes, telemedicine, remote education, industrial manufacturing and Internet of things, and specifically comprises typical business applications such as gigabit-capable mobile broadband data access, 3D videos, high-definition videos, cloud services, augmented Reality (AR), virtual Reality (VR), industrial manufacturing automation, emergency rescue, automatic driving, modern logistics and the like. High-definition video, AR, VR, telemedicine, industrial manufacturing automation, modern logistics management and the like mainly occur in indoor scenes of buildings.
The research and application of GaN material is the leading edge and hot spot of the current global semiconductor research, is a novel semiconductor material for developing microelectronic devices and optoelectronic devices, and is praised as the third generation semiconductor material following the first generation Ge, si semiconductor material, the second generation GaAs, inP compound semiconductor material together with semiconductor materials such as SIC, diamond and the like. Gallium nitride (GaN) has the advantages of wide forbidden band width, high breakdown electric field, high thermal conductivity, high electronic saturation rate, higher radiation resistance and the like, and has very wide application prospect in high-temperature, high-frequency and microwave high-power semiconductor devices. Low ohmic contact resistance plays a crucial role for output power, high efficiency, high frequency and noise performance. In recent years, gaN has been used in the rf industry in large quantities by virtue of its higher power output at high frequencies and smaller footprint.
In application of the GaN radio frequency device, the GaN HEMT device is a transverse plane device, as shown in figure 1, the transconductance (gm) of the GaN HEMT device changes along with the change curve of gate voltage (Vgs), and the transconductance gm decreases along with the increase of gate input voltage, and correspondingly, the gain decreases; transconductance gm refers to the ratio of the change value of the current at the output end to the change value of the voltage at the input end, and the nonlinearity of the PA thereof causes obvious band-edge leakage, premature saturation of output power, signal distortion and the like, thereby affecting the characteristics of the system and increasing the complexity of the system design.
Disclosure of Invention
The invention aims to provide a GaN HEMT radio frequency device with high linearity and a manufacturing method thereof aiming at the problems in the prior art.
In order to achieve the above object, the present invention provides a gallium nitride-based HEMT radio frequency device, comprising a semiconductor substrate, a channel layer, a barrier layer stacked from bottom to top; the barrier layer at the grid region between the source electrode and the drain electrode at the active region is provided with a step-shaped groove, the grid electrode is arranged on the step-shaped groove of the barrier layer, the height of the grid electrode is larger than the upper surface of the barrier layer, a dielectric layer is arranged among the source electrode, the drain electrode and the grid electrode, the step surface sequentially descends or ascends along the height of the step surface in the width direction of the grid electrode, the heights of different step surfaces are different, namely, a plurality of grooves are sequentially formed on the surface of the barrier layer between the source electrode and the drain electrode at the active region along the width direction of the grid electrode, and the depths of the grooves are sequentially deepened or lightened.
Further, the barrier layer has a thickness in a range of 3nm to 50nm.
Preferably, the depth difference between any two grooves is greater than or equal to 1nm, and the depth range of the grooves is 0 to the thickness of the barrier layer.
Preferably, the surface of the barrier layer at the gate region between the source and the drain is provided with at least two grooves in sequence along the gate width direction; the recess is completely covered by the gate metal.
Preferably, the gate is a T-shaped gate structure.
Furthermore, a connection surface is connected between the adjacent step surfaces, and the connection surface is a vertical surface, or a slope surface with a certain angle, or an arc surface, or a surface with an irregular shape.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the gallium nitride-based HEMT radio-frequency device, which comprises the following steps:
forming a channel layer and a barrier layer on a semiconductor substrate in sequence;
depositing a dielectric layer on the barrier layer;
etching the dielectric layer, and correspondingly forming a source region window and a drain region window in a source region and a drain region above the barrier layer;
forming ohmic contact metal on the source electrode area window and the drain electrode area window, and annealing at high temperature to form a source electrode and a drain electrode;
step five, adopting one or a plurality of times of photoetching process to form a step-shaped groove on the barrier layer of the grid electrode area between the source electrode and the drain electrode at the active area; the step-shaped groove of the barrier layer at the active region at least comprises two step surfaces, and the step surfaces sequentially descend or sequentially ascend along the height of the step surfaces in the gate width direction, namely the different step surfaces have different heights;
and step six, obtaining a grid region window through a photoetching process, forming Schottky contact metal on the grid region window to form a grid, and arranging the grid on the barrier layer step-shaped groove.
Further, in the manufacturing method, the gate is of a T-shaped gate structure, the depth difference between any two grooves is greater than or equal to 1nm, and the depth range of the grooves is 0 to the thickness of the barrier layer.
Further, in the manufacturing method, in the step (5), a step-shaped groove is formed on the barrier layer in the gate region between the source electrode and the drain electrode in the active region by adopting a one-time photoetching process, and specifically, a photoresist layer with the thickness gradually decreased or gradually increased along the gate width direction is formed on the surface of the barrier layer in the gate region between the source electrode and the drain electrode in the active region in a one-time exposure and development mode; and forming a step-shaped groove which descends or ascends in sequence on the barrier layer between the source electrode and the drain electrode in the active region by etching in a one-time dry etching mode.
Further, in the above manufacturing method, a joining surface is connected between adjacent step surfaces, and the joining surface is a vertical surface, a slope surface at a certain angle, an arc surface, or an irregular surface.
Compared with the prior art, the gallium nitride-based HEMT radio frequency device has the advantages that different groove depths are formed at the barrier layer along the width direction of the grid below the grid region of the same device through a semiconductor manufacturing process, step-shaped grids are formed at the different groove depths, the grids with different heights are formed to form grids in different regions, and the grids in different regions have different turn-off voltages, so that transconductance gm presents a flat appearance, the linearity of the gallium nitride-based HEMT radio frequency device is improved, the turn-off voltage is controlled, and the linearity of the gallium nitride-based HEMT radio frequency device is improved.
Drawings
FIG. 1 is a graph of transconductance versus gate voltage for a conventional GaN HEMT device;
fig. 2 is a first schematic diagram of a GaN HEMT radio frequency device according to an embodiment of the present invention;
fig. 3-7 are schematic partial cross-sectional views along a direction A1-A5 of a GaN HEMT radio-frequency device according to a first embodiment of the present invention;
fig. 8 is a partial cross-sectional view along the B direction of a first schematic diagram of a GaN HEMT radio frequency device according to an embodiment of the present invention;
fig. 9 is a schematic diagram of another embodiment of a GaN HEMT radio frequency device according to the embodiment of the present invention;
fig. 10 is a schematic diagram of a secondary GaN HEMT radio frequency device according to an embodiment of the present invention.
Detailed Description
The invention is further explained below with reference to the figures and the specific embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally put on when products of the present invention are used, and are only used for convenience of description and simplification of description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
Example one
Referring to fig. 2-7, the gallium nitride-based HEMT radio frequency device of the present invention comprises a semiconductor substrate, a channel layer, and a barrier layer stacked from bottom to top; the field effect transistor further comprises a source electrode 5 and a drain electrode 6 which are oppositely arranged at 100 positions of an active region above the barrier layer, and a grid electrode 7, wherein the barrier layer at the position of a grid electrode region between the source electrode 5 and the drain electrode 6 at the position of the active region is provided with a step-shaped groove, the grid electrode 7 is arranged on the step-shaped groove of the barrier layer, the height of the grid electrode 7 is larger than the upper surface of the barrier layer, a dielectric layer 8 is arranged among the source electrode 5, the drain electrode 6 and the grid electrode 7, and the grid length direction is used for indicating the transport direction of carriers in the field effect transistor, namely the direction from the source electrode to the drain electrode, and the direction vertical to the grid length direction is defined as the grid width direction; the step-shaped groove of the barrier layer at the active region at least comprises two step surfaces, the step surfaces sequentially descend along the height of the step surfaces in the gate width direction, the heights of different step surfaces are different, namely, a plurality of grooves are sequentially formed on the surface of the barrier layer at the gate region between the source electrode 5 and the drain electrode 6 at the active region along the gate width direction, the depths of the grooves become deeper sequentially, and the grooves are completely covered by gate metal.
It should be noted that the barrier layer at the gate region between the source 5 and the drain 6 in the active region is provided with a step-shaped recess, where the step-shaped recess includes first to nth step surfaces that are sequentially arranged, and the first step surface or the nth step surface may be a surface of the barrier layer, that is, the recess depth is 0, that is, the recess depth of the lowest step surface of the step-shaped recess provided in the barrier layer between the source 5 and the drain 6 in the active region may be zero (h = 0), or may not be zero (h > 0), and the maximum recess depth is the thickness h of the barrier layer.
Further, the grid electrode 7 is of a T-shaped grid structure;
the connecting surface is connected between the adjacent step surfaces and is a vertical surface, or a slope surface with a certain angle, or an arc surface, or an irregular surface.
The semiconductor substrate 1 can be silicon (Si), silicon carbide (SiC) or sapphire (Saphhire), and the thickness of the semiconductor substrate is between 50 and 100 mu m.
The channel layer can be GaN, and the thickness range of the barrier layer is 10 nm-200 nm;
in the nitride HEMT device, a heterojunction channel can be formed between the channel layer and the barrier layer, so that a two-dimensional electron gas can be formed at a contact interface of the two. Illustratively, the channel layer may be a gallium nitride material and the barrier layer an aluminum gallium nitride material. Of course, in the embodiment of the present invention, the channel layer and the barrier layer constituting the heterojunction structure may also be a gallium nitride material, an indium gallium nitride material, and the like, respectively, and the specific materials of the channel layer and the barrier layer are not limited herein as long as the heterojunction structure can be constituted. The barrier layer can be AlGaN, aluminum nitride, aluminum indium nitride, aluminum gallium nitride, indium gallium nitride or aluminum indium gallium nitride, and the thickness range of the barrier layer is 3nm-50nm.
In a specific embodiment, the semiconductor substrate 1 is sapphire with a thickness of 60 μm; the buffer layer 2 is a GaN layer; the channel layer 3 is a GaN layer and has the thickness of 50nm; the barrier layer 4 is an AlGaN layer, and the thickness of the barrier layer is marked as h, specifically 30nm; the buffer layer comprises GaN material with a nitride nucleation layer (not shown) and a nitride buffer layer disposed between the semiconductor substrate and the nitride channel layer. Referring to fig. 2, the barrier layer provided step-like recess at the gate region between the source electrode 5 and the drain electrode 6 at the active region includes 5 step surfaces which descend in sequence along the gate width direction step surface, as shown in fig. 3 to 7, including first to fifth step surfaces,
a schematic cross-sectional view of the GaN HEMT radio frequency device in the A1 direction, the groove depth h1 of the first step surface 71;
a schematic cross-sectional view of the GaN HEMT radio frequency device in the A2 direction, the groove depth h2 of the second step surface 72;
a schematic cross-sectional view of the GaN HEMT radio frequency device in the A3 direction, the depth h3 of the groove of the third step surface 73;
a schematic cross-sectional view of the GaN HEMT radio frequency device in the A4 direction, the groove depth h4 of the third step surface 74;
a schematic cross-sectional view of the GaN HEMT radio frequency device in the A5 direction, the depth h5 of the groove of the third step surface 75;
as shown in the attached figure 8, the step surfaces are sequentially reduced along the height of the step surface in the width direction of the grid, namely h1 is more than or equal to 0 and more than h2 and more than h3 and more than h4 and more than h5, an engagement surface is connected between the adjacent step surfaces, the engagement surface is a vertical surface, and meanwhile h-h5 is more than or equal to 0nm in order to ensure a two-dimensional electron flow channel of the GaN HEMT radio-frequency device.
In the above embodiment, the stepped recess of the barrier layer includes 5 stepped surfaces, and it should be noted that the stepped recess formed in the barrier layer in the gate region between the source 5 and the drain 6 in the active region includes at least two stepped surfaces, for example, 2, 3 stepped surfaces 8230at the stepped recess of the barrier layer \8230
More preferably, at least two or more grooves are included, the depth of the grooves is 0 or more, and the difference in depth between the different grooves is 1nm or more.
It should be noted that, in the above embodiment, the source electrode 5 and the drain electrode 6 may be partially embedded into the barrier layer, or the source electrode 5 and the drain electrode 6 may be disposed on the barrier layer, as shown in fig. 9. Correspondingly, the invention also discloses a manufacturing method of the GaN HEMT radio-frequency device of the certain embodiment, which specifically comprises the following steps:
(1) On a sapphire substrate 1, a GaN buffer layer 2 is grown by utilizing a metal organic chemical vapor deposition process;
(2) Growing a GaN channel layer 3 with the thickness of 20nm on the GaN buffer layer 2;
(3) On the GaN channel layer 3, an AlGaN barrier layer 4 was grown to a thickness of 20nm
(4) Depositing Si on the AlGaN barrier layer (4) by adopting an atomic layer deposition process 3 N 4 A dielectric thin film dielectric layer 8 with the thickness of 100nm;
(5) Forming windows required by etching in the source and drain regions by photolithography, and removing Si in the source and drain regions by reactive ion etching 3 N 4 A thin film dielectric layer 8 for forming source/drain region windows
(6) Evaporating ohmic contact metal (such as Ti/Al/Ni/Au) on the windows of the source electrode region and the drain electrode region by adopting an electron beam evaporation process, and annealing at high temperature to form a source electrode 5 and a drain electrode 6;
(7) Adopting one or more photoetching processes to form a step-shaped groove on the barrier layer in the gate region between the source electrode and the drain electrode in the active region; the step-shaped groove of the barrier layer at the active region at least comprises two step surfaces, and the step surfaces sequentially descend along the height of the step surfaces in the gate width direction, namely the different step surfaces have different heights;
(8) And (3) obtaining a gate area window through a photoetching process, evaporating Schottky contact metal on the gate area window to form a gate 7, and laminating the Ni/Au metal. Of course, the schottky contact metal may be any metal or combination of metal stacks that form a schottky contact with (al) gan, and the gate is disposed on the barrier layer step-like recess.
Further, a step-shaped groove is formed on the barrier layer of the gate region between the source electrode and the drain electrode in the active region by adopting a photoetching process,
forming a photoresist layer with the thickness gradually reduced along the width direction of the gate on the surface of the barrier layer in the gate region between the source electrode and the drain electrode in the active region in a primary exposure and development mode; that is, the photoresist layer of the surface of the barrier layer at the gate region between the source and drain at the active region has its height sequentially lowered in the gate width direction.
And forming a step-shaped groove which descends in sequence on the barrier layer between the source electrode and the drain electrode in the active region by etching in a one-time dry etching mode, so that a plurality of grooves are formed in sequence on the surface of the barrier layer between the source electrode and the drain electrode in the active region along the width direction of the gate, and the depth of the grooves becomes deeper in sequence.
Example two
The gallium nitride-based HEMT radio frequency device comprises a semiconductor substrate, a channel layer and a barrier layer which are stacked from bottom to top; the field effect transistor further comprises a source electrode 5 and a drain electrode 6 which are oppositely arranged at 100 positions of an active region above the barrier layer, and a grid electrode, wherein the barrier layer at the position of a grid electrode region between the source electrode 5 and the drain electrode 6 at the position of the active region is provided with a step-shaped groove, the grid electrode 7 is arranged on the step-shaped groove of the barrier layer, the height of the grid electrode 7 is larger than the upper surface of the barrier layer, a dielectric layer 8 is arranged among the source electrode 5, the drain electrode 6 and the grid electrode 7, and the grid length direction is used for indicating the transport direction of carriers in the field effect transistor, namely the direction from the source electrode to the drain electrode, and the direction vertical to the grid length direction is defined as the grid width direction; the step-shaped recess of the barrier layer at the active region at least comprises two step surfaces, and referring to fig. 10, the step surfaces sequentially rise along the step surface height in the gate width direction, the heights of different step surfaces are different, that is, a plurality of recesses are sequentially formed on the surface of the barrier layer at the gate region between the source electrode 5 and the drain electrode 6 at the active region along the gate width direction, the depths of the plurality of recesses become shallower sequentially, and the recesses are completely covered by gate metal.
In a specific embodiment, the semiconductor substrate 1 is sapphire with a thickness of 50 μm; the buffer layer 2 is a GaN layer; the channel layer 3 is a GaN layer, and the thickness is 80nm; the barrier layer 4 is an AlGaN layer, and the thickness of the barrier layer is marked as h, specifically 30nm; the buffer layer comprises GaN material with a nitride nucleation layer (not shown) and a nitride buffer layer disposed between the semiconductor substrate and the nitride channel layer. The barrier layer at the gate region between the source electrode 5 and the drain electrode 6 at the active region is provided with a step-like recess including 5 step surfaces which rise in sequence along the gate width direction step surface, as shown in fig. 10, including first to fifth step surfaces,
the section schematic diagram of the gallium nitride-based HEMT radio frequency device in the A1 direction is that the depth h1 of a groove of the first step surface is 20nm;
a schematic cross-sectional view of the gallium nitride-based HEMT radio-frequency device in the A2 direction, wherein the depth h2 of the groove on the second step surface is specifically 15nm;
the section schematic diagram of the gallium nitride-based HEMT radio-frequency device in the A3 direction is that the depth h3 of the groove of the third step surface is 10nm;
the section schematic diagram of the gallium nitride-based HEMT radio-frequency device in the A4 direction is that the depth h4 of the groove of the third step surface is 5nm; (ii) a
The section schematic diagram of the gallium nitride-based HEMT radio-frequency device in the A5 direction is that the depth h5 of the groove of the third step surface is 0nm;
the step surfaces sequentially rise along the height of the step surface in the gate width direction, and h = h1 > h2 > h3 > h4 > h5=0.
In addition, the corresponding manufacturing method of the gallium nitride-based HEMT radio frequency device of the present embodiment is similar to that of embodiment 1, and is not further described herein, except that in step (7),
step (7) adopting one or a plurality of photoetching processes to form a step-shaped groove on the barrier layer of the grid electrode area between the source electrode and the drain electrode at the active area; the step-shaped groove of the barrier layer at the active region at least comprises two step surfaces, and the step surfaces sequentially rise along the height of the step surfaces in the gate width direction, namely the different step surfaces have different heights;
and a step-shaped groove which rises sequentially is formed on the barrier layer between the source electrode and the drain electrode in the active region by etching in a one-time dry etching mode, so that a plurality of grooves are formed in the surface of the barrier layer between the source electrode and the drain electrode in the active region in sequence along the width direction of the gate, and the depth of the grooves becomes shallow in sequence.
Further, a step-shaped groove is formed on the barrier layer of the gate region between the source electrode and the drain electrode in the active region by adopting a photoetching process,
forming a photoresist layer with sequentially increasing thickness on the surface of the barrier layer in the gate region between the source electrode and the drain electrode in the active region along the gate width direction in a one-time exposure and development mode; that is, the photoresist layer of the surface of the barrier layer at the gate region between the source and drain at the active region sequentially rises in height along the gate width direction.
And forming a sequentially ascending step-shaped groove on the barrier layer between the source electrode and the drain electrode in the active region by etching in a one-time dry etching mode, so that a plurality of grooves are sequentially formed on the surface of the barrier layer between the source electrode and the drain electrode in the active region along the width direction of the gate, and the depth of the grooves is sequentially reduced.
According to the gallium nitride-based HEMT radio frequency device, different groove depths are formed at the barrier layer along the width direction of the grid below the grid region of the same device through a semiconductor manufacturing process, step-shaped grids are formed at the different groove depths, the grids with different heights are formed to form grids in different regions, and the grids in different regions have different turn-off voltages, so that the transconductance gm presents a flat appearance, the linearity of the gallium nitride-based HEMT radio frequency device is improved, the turn-off voltage is controlled, and the linearity of the gallium nitride-based HEMT radio frequency device is improved.
The above embodiments are only used to further illustrate the gallium nitride-based HEMT radio frequency device and the method of manufacturing the same, but the present invention is not limited to the embodiments, and any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention fall within the protection scope of the technical solution of the present invention.
Claims (10)
1. A gallium nitride-based HEMT radio frequency device comprises a semiconductor substrate, a channel layer and a barrier layer which are arranged in a stacking mode from bottom to top; and a source electrode and a drain electrode oppositely arranged on the active region above the barrier layer, and a grid electrode,
the method comprises the steps that a step-shaped groove is formed in a barrier layer at a grid region between a source electrode and a drain electrode at an active region, the grid electrode is arranged on the step-shaped groove of the barrier layer, the height of the grid electrode is larger than the upper surface of the barrier layer, a dielectric layer is arranged among the source electrode, the drain electrode and the grid electrode, step surfaces sequentially descend or ascend along the height of the step surfaces in the width direction of the grid electrode, the heights of different step surfaces are different, namely a plurality of grooves are sequentially formed in the surface of the barrier layer between the source electrode and the drain electrode at the active region along the width direction of the grid electrode, the depths of the grooves are sequentially deepened or shallowed, the depth range of the grooves is 0-barrier layer thickness, and the grooves are completely covered by grid metal; and forming a grid along the width direction of the grid, wherein the distance between the root part of the grid and the channel layer is sequentially increased or shortened, and the thickness of the grid is the same.
2. The gallium nitride-based HEMT radio frequency device of claim 1,
the thickness range of the barrier layer is 3nm-50nm.
3. The gallium nitride-based HEMT radio frequency device of claim 1,
the depth difference between any two grooves is larger than or equal to 1nm.
4. The gallium nitride-based HEMT radio frequency device of claim 1,
and at least two grooves are sequentially formed on the surface of the barrier layer in the grid region between the source electrode and the drain electrode along the width direction of the grid.
5. The gallium nitride-based HEMT radio frequency device of claim 1,
the grid is of a T-shaped grid structure.
6. The gallium nitride-based HEMT radio-frequency device of claim 1, wherein said device is characterized in that
The connection surface is connected between the adjacent step surfaces and is a vertical surface, or a slope surface with a certain angle, or an arc surface, or a surface with an irregular shape.
7. A manufacturing method of a gallium nitride-based HEMT radio frequency device is characterized by comprising the following steps:
forming a channel layer and a barrier layer on a semiconductor substrate in sequence;
depositing a dielectric layer on the barrier layer;
etching the dielectric layer, and correspondingly forming a source region window and a drain region window in a source region and a drain region above the barrier layer;
forming ohmic contact metal on the source electrode area window and the drain electrode area window, and annealing at high temperature to form a source electrode and a drain electrode;
step five, adopting at least one photoetching process to form a step-shaped groove on the barrier layer in the gate region between the source electrode and the drain electrode in the active region; the step-shaped groove of the barrier layer at the active region at least comprises two step surfaces, and the step surfaces sequentially descend or sequentially ascend along the height of the step surfaces in the width direction of the gate, namely the different step surfaces have different heights;
step six, obtaining a grid electrode area window through a photoetching process, and forming Schottky contact metal on the grid electrode area window to form a grid electrode;
the depth of the groove ranges from 0 to the thickness of the barrier layer, and the groove is completely covered by the gate metal; and forming a grid along the width direction of the grid, wherein the distance between the root part of the grid and the channel layer is sequentially increased or shortened, and the thickness of the grid is the same.
8. The method for manufacturing a gallium nitride-based HEMT radio-frequency device according to claim 7,
the grid is of a T-shaped grid structure, and the depth difference between any two grooves is larger than or equal to 1nm.
9. The method for manufacturing a gallium nitride-based HEMT radio-frequency device according to claim 7,
adopting a photoetching process to form a step-shaped groove on the barrier layer of the gate region between the source electrode and the drain electrode in the active region, specifically comprising,
forming a photoresist layer with the thickness sequentially decreasing or sequentially increasing on the surface of the barrier layer in the gate region between the source electrode and the drain electrode in the active region along the gate width direction in a one-time exposure and development mode;
and forming a step-shaped groove which sequentially descends or ascends by etching the barrier layer between the source electrode and the drain electrode at the active region in a one-time dry etching mode.
10. The method for manufacturing a gallium nitride-based HEMT radio-frequency device according to claim 7,
the connecting surface is connected between the adjacent step surfaces and is a vertical surface, or a slope surface with a certain angle, or an arc surface, or an irregular surface.
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